Smart High-Side Power Switch One Channel: 1 x 1Ω

Transcription

1 BTS 44 N Smart HighSide Power Switch One Channel: x Ω Features Current controlled input Product Summary Overvoltage protection bbin(az) 6 Short circuit protection Operating voltage bb(on) Current limitation Overload protection Onstate resistance R ON Ω Overvoltage protection (including load dump) Switching inductive loads Clamp of negative voltage at output with inductive loads Thermal shutdown with restart ESD Protection Loss of GND and loss of bb protection ery low standby current Reverse battery protection mproved electromagnetic compatibility (EMC) SOT3 4 3 PS563 Application All types of resistive, inductive and capacitive loads Current controlled power switch for, 4 and 4 DC applications Driver for electromechanical relays Signal amplifier General Description N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in Smart SPMOS technology. Providing embedded protective functions. Page 47

2 BTS 44 N Block Diagram + bb /4 Control Circuit R Temperature Sensor 3 R L GND Pin Symbol bb 3 4 bb Function nput, activates the power switch in case of connection to GND Positive power supply voltage Output to the load Positive power supply voltage Page 47

3 BTS 44 N Maximum Ratings Parameter at T j = 5 C, unless otherwise specified Symbol alue Unit Supply voltage bb 6 Load current (Short circuit current, see page 5) L self limited A Maximum current through the input pin ( DC ) ±5 ma Operating temperature T j C Storage temperature T stg Power dissipation ) P tot.7 W T A = 5 C nductive load switchoff energy dissipation ) single pulse T j = 5 C, L =.5 A E AS J Load dump protection 3) LoadDump 4)= A + S R =Ω, t d =4ms, = low or high L = 5 ma, bb = 3,5 bb = 7 Electrostatic discharge voltage (Human Body Model) according to ANS EOS/ESD S ESD STM nput pin all other pins Loaddump ESD ± ±5 k Device on 5mm*5mm*.5mm epoxy PCB FR4 with 6 cm (one layer, 7µm thick) copper area for bb connection. PCB is vertical without blown air. not subject to production test, specified by design 3 more details see EMCCharacteristics on page 7 4 Loaddump is setup without the DUT connected to the generator per SO 7637 and D Page 3 47

4 BTS 44 N Electrical Characteristics Parameter Symbol alues Unit at T j = C, bb = unless otherwise specified min. typ. max. Thermal Characteristics Thermal min. footprint R th(ja) 86 5 K/W Thermal 6 cm cooling area ) R th(ja) 6 7 Thermal resistance, junction soldering point R thjs 7 K/W Load Switching Capabilities and Characteristics Onstate resistance Pin connencted to GND T j = 5 C, L = 5 ma, bb = T j = 5 C T j = 5 C, L = 5 ma, bb = 6 Nominal load current ) Device on PCB ) T a = 85 C, T j 5 C Turnon time 3) = bb to to 9% R L = 7 Ω R L = 7 Ω, bb = 3.5, T j = 5 C R ON Ω L(nom). A t on µs ) Turnoff time 3) = to bb to % R L = 7 Ω t off 75 4) R L = 7 Ω, bb = 3.5, T j = 5 C 4 4 Slew rate on 3) = bb to to 3% R L = 7 Ω d/dt on 6 4) /µs R L = 7 Ω, T j = 5 C, bb = Slew rate off 3) = to bb 7 to 4% R L = 7 Ω d/dt off 8 4) R L = 7 Ω, T j = 5 C, bb = Device on 5mm*5mm*.5mm epoxy PCB FR4 with 6 cm (one layer, 7µm thick) copper area for bb connection. PCB is vertical without blown air. Nominal load current is limited by the current limitation ( see page 5 ) 3 Timing values only with high input slewrates, otherwise slower. 4 not subject to production test, specified by design Page 4 47

5 BTS 44 N Electrical Characteristics Parameter Symbol alues Unit at T j = C, bb = unless otherwise specified min. typ. max. Operating Parameters Operating voltage bb(on) Standby current Pin = open bb(off) µa Protection Functions ) nitial peak short circuit current limit (see page ) T j = 4 C, bb = 3.5, t m = µs T j = 5 C T j = 5 C Repetitive short circuit current limit L(SCp)..9. L(SCr).7 A T j = T jt Output clamp (inductive load switch off) ON(CL) 6 at = bb ON(CL), bb = 4 ma Overvoltage protection bbin(az) 6 68 bb = ma Thermal overload trip temperature T jt 5 C Thermal hysteresis T jt K ntegrated protection functions are designed to prevent C destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Page 5 47

6 BTS 44 N Electrical Characteristics Parameter Symbol alues Unit at T j = C, bb = unless otherwise specified min. typ. max. nput Off state input current. T j = 5 C, R L = 7 Ω T j = 5 C (off) ma.5.4 On state input current ( Pin grounded ) ) (on).3 nput resistance R.5.5 kω Reverse Battery Continuous reverse drain current T C = 5 C Drainsource diode voltage ( > bb ) F =. A,,5 ma S. A ON 6 m Driver circuit must be able to drive currents > ma. Page 6 47

7 BTS 44 N EMCCharacteristics All EMCCharacteristics are based on limited number of sampels and no part of production test. Test Conditions: f not other specified the test circuitry is the minimal functional configuration without any external components for protection or filtering. Supply voltage: bb = 3.5 Temperature: T a = 3 ±5 C ; Load: R L = Ω Operation mode: PWM Frequency: Hz / Duty Cycle: 5% DC On/Off DUTSpecific.: Fast electrical transients Acc. SO 7637 Test Pulse Test Level Test Results Pulse Cycle Time and On Off Generator mpedance C C 5ms ; Ω + C C 5ms ; Ω 3a C C ms ; 5Ω 3b + C C ms ; 5Ω 4 ) 7 C C,Ω 5 75 E (5 ) E (5 ) 4ms ; Ω The test pulses are applied at bb Definition of functional status Class C E Content All functions of the device are performed as designed after exposure to disturbance. One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit. Test circuit: Pulse Bat. bb PROFET R L Supply voltage bb = instead of 3,5. Page 7 47

8 BTS 44 N Conducted Emission Acc. EC (Ω / 5Ω method) Typ. bb Pin Emission at DCOn with 5Ωmatching network 9 8 Noise bb DC dbµ Ω / 8H 5Ω / 3N, f / M H z Typ. bb Pin Emission at PWMMode with 5Ωmatching network 9 8 Noise bb PW M dbµ Ω / 8H 5Ω / 3N, f / M H z Test circuit: 5µH 5ΩNetwork bb PROFET 5µH BSS R For defined decoupling and high reproducibility a defined choke (5µH at MHz) is inserted between supply and bb pin. Page 8 47

9 BTS 44 N Conducted Susceptibility Acc. 47A/658/CD EC 634 (Direct Power njection) Direct Power njection: Failure criteria: Forward Power CW Amplitude and frequency deviation max. % at Out Typ. bbpin Susceptibility at DCOn/Off dbm 5 5 Lim it ON OFF Device: BTS 44 D ate C od e : E 5 Load: Ohm O M od e : O N / O F F C o u p lin g P o in t: B B M on ito rin g : O u t M od u la tio n: C W M ea su re m en t: P fw d f / M H z Typ. bb Pin Susceptibility at PWMMode dbm 5 5 Lim it PW M D evice : B T S 4 4 D ate C od e : E 5 L oa d : O h m O M o de : P W M H z 5 % Coupling Point: BB M on ito rin g : O u t M od u la tio n: C W Measurem ent: Pfw d f / M H z Test circuit: 5µH HF 5Ω bb PROFET 5µH 5Ω 6,8nF BSS R L 6,8nF For defined decoupling and high reproducibility the same choke and the same 5Ω matching network as for the emission measurement is used. Page 9 47

10 BTS 44 N Terms nductive and overvoltage output clamp bb + bb bb L ON Z ON bb PROFET nput circuit (ESD protection) ON clamped to 6 min. + bb Overvoltage protection of logic part ESD + bb Control. Circuit Z R Logic R Reverse battery protection Signal GND bb bb,az = Z + bb * R = 6 min. Logic R Power nverse Diode R L Signal GND Power GND R =kω typ., Temperature protection is not active during inverse current. Page 47

11 BTS 44 N bb disconnect with charged inductive load nductive Load switchoff energy dissipation E bb E AS bb bb E Load bb PROFET = PROFET L Z L{ R L E L E R Energy stored in load inductance: E L = ½ * L * L While demagnetizing load inductance, the enérgy dissipated in PROFET is E AS = E bb + E L E R = ON(CL) * i L (t) dt, with an approximate solution for R L > Ω: E AS L * L L * R L = *( bb+ CL + * R ( ) )*ln( L CL ) ( ) Page 47

12 BTS 44 N Typ. transient thermal impedance Z thja =f(t p 6cm heatsink area Parameter: D=t p /T K/W Typ. transient thermal impedance Z thja =f(t p min. footprint Parameter: D=t p /T K/W ZthJA ZthJA D=.5 D=. D=. D=.5 D=. D=. D= D=.5 D=. D=. D=.5 D=. D=. D= s t p Typ. onstate resistance R ON = f(t j ) ; bb = 9 ; Pin grounded; L =5mA.6 Ω s t p Typ. onstate resistance R ON = f( bb ); L = 5mA ; Pin grounded Ω 3. RON RON 5 C C.4 4 C C 6 T j bb Page 47

13 BTS 44 N Typ. turn on time Typ. turn off time t on = f(t j ); R L = 7Ω t off = f(t j ); R L = 7Ω 8 8 µs µs ton 5 4 toff C 6 T j Typ. slew rate on d/dt on = f(t j ) ; R L = 7 Ω C 6 T j Typ. slew rate off d/dt off = f(t j ); R L = 7 Ω /µs 3 6 /µs 5 d dton d dtoff , C 6 T j C 6 T j Page 3 47

14 BTS 44 N Typ. initial peak short circuit current limit L(SCp) = f(t j ) ; bb = 3,5 ; t m = µs Typ. initial short circuit shutdown time t off(sc) = f(t j,start ) A 3 ms L(SCp).6 toff(sc).4. 3, C 6 T j Typ. initial peak short circuit current limit L(SCp) = f( bb ); t m = µs C 6 T j Typ. current limitation characteristic: L(SC) = f( ON ), bb = 3,5. A 4 C A 5 C L(SCp).8 5 C L(SC) bb ON Page 4 47

15 BTS 44 N Typ. standby current bb(off) = f(t j ) ; Pin open µa 6 6 Maximum allowable inductive switchoff energy, single pulse E AS = f( L ); T jstart = 5 C. J.8 bb(off) 4 EAS C 6 T j ma 5 L Page 5 47

16 BTS 44 N Timing diagrams Figure a: bb turn on: Figure b: Switching a lamp bb L L t t Figure a: Switching a resistive load, turnon/off time and slew rate definition Figure c: Switching an inductive load 9% t on d/dtoff % d/dton t off L L t t Page 6 47

17 BTS 44 N Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling Figure 3b: Short circuit in onstate shut down by overtemperature, restart by cooling Output short to GND normal operation Output short to GND L t m L(SCp) L(SCr) t L L(SCr) t off(sc) t Heating up of the chip may require several milliseconds, depending on external conditions. Figure 4: Overtemperature: Reset if T j < T jt T J t Page 7 47

18 BTS 44 N Package and ordering code all dimensions in mm Sales code Ordering code, BTS 44 N Q676S684A A 6.5 ±. 3 ±.. max.6 ±. B 4 +. acc. to D ±.3 5 max 3.5±. 3 min.5.7 ± ±.4.5 M A.5 M B GPS556 Published by nfineon Technologies AG, St.MartinStrasse 53, D8669 München nfineon Technologies AG All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. nfineon Technologies is an approved CECC manufacturer. nformation For further information on technology, delivery terms and conditions and prices please contact your nearest nfineon Technologies Office in Germany or our nfineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest nfineon Technologies Office. nfineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of nfineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. f they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 47