Smart Highside High Current Power Switch

Transcription

1 Data Sheet BTS651 Smart Highside High Current Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Features Overload protection Current limitation Short circuit protection Overtemperature protection Overvoltage protection (including load dump) Clamp of negative voltage at output Fast deenergizing of inductive loads 1 ) ow ohmic inverse current operation Diagnostic feedback with load current sense Open load detection via current sense oss of protection 2 ) Electrostatic discharge (ESD) protection Product Summary Operating voltage (on) On-state resistance RON 6. mω Noinal current I(nom) 17 A oad current (O) I(O) 7 A Short circuit current limitation I(SC) 13 A Current sense ratio I : I 14 TO 22-7 Application Power switch with current sense diagnostic feedback for 12 and 24 DC grounded loads Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads Replaces electromechanical relays, fuses and discrete circuits 1 SM D 7 General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 4 & Tab + oltage source Overvoltage protection Current limit Gate protection R 3 ESD oltage sensor ogic Charge pump evel shifter Rectifier imit for unclamped ind. loads Output oltage detection Current Sense 1,2,6,7 I oad I Temperature sensor I 5 oad GND R ogic GND 1 ) With additional external diode. 2 ) Additional external diode required for energized inductive loads (see page 8). Infineon Technologies AG Page 1of Oct-1

2 Data Sheet BTS651 Pin Symbol Function 1 O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3 ) 2 O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3) 3 I Input, activates the power switch in case of short to ground 4 + Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the connection instead of this pin 4). 5 S Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 6) 6 O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3) 7 O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3) Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol alues Unit Supply voltage (overvoltage protection see page 4) 42 Supply voltage for short circuit protection, 34 T j,start = C: (E AS limitation see diagram on page 9) oad current (short circuit current, see page 5) I self-limited A oad dump protection oaddump = A + s, A = R ) I = 2 Ω, R =.54 Ω, t d = 2 ms, 6 ) oad dump 75, = open or grounded Operating temperature range T j C Storage temperature range T stg Power dissipation (DC), T C 25 C P tot 17 W Inductive load switch-off energy dissipation, single pulse = 12, T j,start = 15 C, T C = 15 C const., E AS 1.5 J I = 2 A, Z = 7.5 mh, Ω, (see diagrams on page 9 ) Electrostatic discharge capability (ESD) Human Body Model acc. MI-STD883D, method and ESD assn. std. S , C = 1 pf, R = 1.5 kω ESD 4 k Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 7 I I +15, , -25 ma 3 ) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 4 ) Otherwise add about.3 mω to the R ON if the pin is used instead of the tab. 5 ) R I = internal resistance of the load dump test pulse generator. 6 ) oad dump is setup without the DUT connected to the generator per O and D Page 2 of Oct-1

3 Data Sheet BTS651 Thermal Characteristics Parameter and Conditions Symbol alues Unit min typ max Thermal resistance chip - case: 7 R thjc ).75 K/W junction - ambient (free air): R thja 6 SMD version, device on PCB 8 ) : 33 Electrical Characteristics Parameter and Conditions Symbol alues Unit at Tj = C, = 12 unless otherwise specified min typ max oad Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7) =, I = 2 A T j = 25 C: T j = 15 C: =, I = 9 A T j = 15 C: = 6 9), =, I = 2 A T j = 15 C: Nominal load current 1), (Tab to pins 1,2,6,7) O Proposal: ON =.5,T C = 85 C,T j 15 C 11 ) SMD 8) : T A = 85 C, T j 15 C ON.5 Maximum load current in resistive range (Tab to pins 1,2,6,7) ON = 1.8, Tc = 25 C: see diagram on page 12 ON = 1.8, Tc = 15 C: Turn-on time 12 ) I to 9% : Turn-off time I to 1% : R = 1 Ω, T j = C Slew rate on 12) (1 to 3% ) R = 1 Ω, T J = 25 C Slew rate off 12) (7 to 4% ) R = 1 Ω, T J = 25 C R ON I (O) I (NOM) I (Max) t on t off mω A A µs d/dt on /µs -d/dt off /µs 7 ) Thermal resistance R thch case to heatsink (about K/W with silicone paste) not included! 8 ) Device on 5mm*5mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 7µm thick) copper area for connection. PCB is vertical without blown air. 9 ) Decrease of below 1 causes slowly a dynamic increase of R ON to a higher value of R ON(Static). As long as b > b(u) max, R ON increase is less than 1 % per second for T J < 85 C. 1 ) not subject to production test, specified by design 11 ) T J is about 15 C under these conditions. 12 ) See timing diagram on page 13. Page 3 of Oct-1

4 Data Sheet BTS651 Parameter and Conditions Symbol alues Unit at Tj = C, = 12 unless otherwise specified min typ max Inverse oad Current Operation On-state resistance (Pins 1,2,6,7 to pin 4) b = 12, I = - 2 A see page 9 T j = 25 C: T j = 15 C: R ON(inv) Nominal inverse load current (Pins 1,2,6,7 to Tab) ON = -.5, Tc = 85 C 11) I (inv) 55 7 A Drain-source diode voltage (out I > ) - ON.6 = - 2 A, I =, Tj = +15 C mω Operating Parameters Operating voltage ( = ) 9, 13 ) (on) Undervoltage shutdown 14 ) b(u) Undervoltage start of charge pump see diagram page 14 b(ucp) Overvoltage protection 15 ) T j =-4 C: I = 15 ma Standby current I = T j = C: T j = C: T j = 15 C: b(z) 6 62 I (off) µa 13 ) If the device is turned on before a -decrease, the operating voltage range is extended down to b(u). For all voltages the device is fully protected against overtemperature and short circuit. 14 ) b = - see diagram on page 7. When b increases from less than b(u) up to b(ucp) = 5 (typ.) the charge pump is not active and ) See also ON(C) in circuit diagram on page 8. Page 4 of Oct-1

5 Data Sheet BTS651 Parameter and Conditions Symbol alues Unit at Tj = C, = 12 unless otherwise specified min typ max Protection Functions 16) Short circuit current limit (Tab to pins 1,2,6,7) 17) ON = 6 T c =-4 C: T c =25 C: T c =+15 C: Output clamp 18 ) I = 4 ma: (inductive load switch off) see diagram Ind. and overvolt. output clamp page 7 I (SC) I (SC) I (SC) (C) Output clamp (inductive load switch off) at = - ON(C) (e.g. overvoltage),i = 4 ma ON(C) Thermal overload trip temperature T jt 15 C Thermal hysteresis T jt 1 K Reverse Battery Reverse battery voltage 19 ) - 32 On-state resistance (Pins 1,2,6,7 to pin 4) T j = 25 C: R ON(rev) = -12, =, I = - 2 A, R = 1 kω T j = 15 C: mω Integrated resistor in line R 12 Ω Diagnostic Characteristics Current sense ratio, I = 9 A,T j =-4 C: static on-condition, T j =25 C: k I = I : I, T j =15 C: ON < ), I = 2 A,T j =-4 C: < - 5, T j =25 C: b > 4. T j =15 C: see diagram on page 11 I = 1 A,T j =-4 C: T j =25 C: T j =15 C: I = 4 A,T j =-4 C: T j =25 C: T j =15 C: I = by I = (e.g. during deenergizing of inductive loads): k I A 16 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 17 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit. The lifetime will be reduced under such conditions. 18 ) This output clamp can be "switched off" by using an additional diode at the -Pin (see page 7). If the diode is used, is clamped to - ON(C) at inductive load switch off. 19 ) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (I = I = ) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 8. 2 ) If ON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see I,lim. Page 5 of Oct-1

6 Data Sheet BTS651 Parameter and Conditions Symbol alues Unit at Tj = C, = 12 unless otherwise specified min typ max Sense current saturation I,lim 6.5 ma Current sense leakage current I = : I ().5 µa =, I : 2 I (H) Current sense overvoltage protection T j =-4 C: b(z) 6 I = 15 ma T j = C: Current sense settling time 21 ) t s() 5 µs Input Input and operating current (see diagram page 12) I (on) ma grounded ( = ) Input current for turn-off 22 ) I (off) 8 µa Truth Table Input current Output Current Sense Remark Normal operation ery high load current Currentlimitation Short circuit to GND Overtemperature Short circuit to Open load Negative output voltage clamp Inverse load current level level I H H nominal H H I, lim H H H H H H H <nominal 23 ) Z 24 ) H H H = "ow" evel H = "High" evel Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14) H H =I / k ilis, up to I =I,lim up to ON = ON(Fold back) I no longer proportional to I ON > ON(Fold back) 21 ) not subject to production test, specified by design 22 ) We recommend the resistance between and GND to be less than.5 kω for turn-on and more than 5kΩ for turn-off. Consider that when the device is switched off (I = ) the voltage between and GND reaches almost. 23 ) ow ohmic short to may reduce the output current I and can thus be detected via the sense current I. 24 ) Power Transistor "OFF", potential defined by external impedance. Page 6 of Oct-1

7 Data Sheet BTS651 Terms b R I 3 b 4 5 I I D S R I 1,2,6,7 Two or more devices can easily be connected in parallel to increase load current capability. Input circuit (ESD protection) ON Current sense status output R I ZD Z, R Z, = 66 (typ.), R = 1 kω nominal (or 1 kω /n, if n devices are connected in parallel). I S = I /k ilis can be driven only by the internal circuit as long as out - > 5. If you want measure load currents up to I (M), R should be less than - 5 I (M) / K ilis. Note: For large values of R the voltage can reach almost. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Z, ZD R Inductive and overvoltage output clamp + b Z1 I ON ZG When the device is switched off (I = ) the voltage between and GND reaches almost. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. Z, = 66 (typ). D S ON is clamped to ON(Cl) = 42 typ. At inductive load switch-off without D S, is clamped to (C) = -19 typ. via ZG. With D S, is clamped to - ON(C) via Z1. Using D S gives faster deenergizing of the inductive load, but higher peak power dissipation in the. In case of a floating ground with a potential higher than 19 referring to the potential the device will switch on, if diode DS is not used. Page 7 of Oct-1

8 Data Sheet BTS651 Overvoltage protection of logic part + R Z, Z, R ogic disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. ( Z < 72 or Zb < 3 if R =). For higher clamp voltages currents at and have to be limited to 25 ma. ersion a: R R Z, Signal GND R = 12 Ω typ., Z, = Z, = 66 typ., R = 1 kω nominal. Note that when overvoltage exceeds 71 typ. a voltage above 5 can occur between and GND, if R, Z, are not used. Z Reverse battery protection - ersion b: R R ogic Power Transistor D S R Zb D R R Signal GND Power GND R 1 kω, R = 1 kω nominal. Add R for reverse battery protection in applications with above 16 19) ; recommended value: = R R R.1A - 12 if D S is not used (or 1.1A = R - 12 if D S is used). To minimize power dissipation at reverse battery operation, the summarized current into the and pin should be about 12mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through R and R. Note that there is no reverse battery protection when using a diode without additional Z-diode Z, Zb. ersion c: Sometimes a neccessary voltage clamp is given by non inductive loads R connected to the same switch and eliminates the need of clamping circuit: R Infineon Technologies AG Page 8 of Oct-1

9 Data Sheet BTS651 Inverse load current operation Maximum allowable load inductance for a single switch off = f (I ); T j,start = 15 C, = 12, R = Ω - I [µh] I [A] I R - 1 The device is specified for inverse load current operation ( > > ). The current sense feature is not available during this kind of operation (I = ). With I = (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on ( = ), this power dissipation is decreased to the much lower value R ON() * I 2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! Inductive load switch-off energy dissipation E I R E AS i (t) Z { R E oad E E R Externally adjustable current limit If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by I S *R. After a delay time defined by R *C T1 will be reset. The device is turned on again, the short circuit current is defined by I (SC). Energy stored in load inductance: E = 1 /2 I 2 While demagnetizing load inductance, the energy dissipated in is E AS = E + E - E R = ON(C) i (t) dt, with an approximate solution for R > Ω: Signal R Signal GND T1 C T2 R R load Power GND E AS = I I R ( 2 R + (C) ) ln (1+ (C) ) Infineon Technologies AG Page 9 of Oct-1

10 Data Sheet BTS651 Options Overview Type BTS 651P 55P 65P 555 Overtemperature protection with hysteresis X X X Tj >15 C, latch function 25 ) X Tj >15 C, with auto-restart on cooling X X Short circuit to GND protection with overtemperature shutdown switches off when ON >6 typ. (when first turned on after approx. 18 µs) Overvoltage shutdown Output negative voltage transient limit to - ON(C) X X X to = -19 typ X 26) X 26 ) X 26) X X X 25 ) atch except when - < ON(SC) after shutdown. In most cases = after shutdown ( only if forced externally). So the device remains latched unless < ON(SC) (see page 5). No latch between turn on and t d(sc). 26 ) Can be "switched off" by using a diode D S (see page 8) or leaving open the current sense output. Infineon Technologies AG Page 1 of Oct-1

11 Data Sheet BTS651 Characteristics Current sense versus load current: I = f(i ), T J = C Current sense ratio: I = f(i ), T J = 25 C max max typ min typ min I [ma] I [A] k I I [A] Current sense ratio: K I = f(i ),T J = -4 C k ilis Current sense ratio: K I = f(i ),T J = 15 C k ilis max typ min max typ min I [A] I [A] Infineon Technologies AG Page 11 of Oct-1

12 Data Sheet BTS651 Typ. current limitation characteristic I = f (ON, T j ) I [A] Typ. input current I = f ( b ), b = - I [ma] T J = 25 C T J = -4 C T J = 15 C.2 ON(FB) Typ. on-state resistance R ON = f (, T j ); I = 2 A; = R ON [mohm] ON [] b [] static dynamic Tj = 15 C 85 C 25 C -4 C [] Infineon Technologies AG Page 12 of Oct-1

13 Data Sheet BTS651 Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2c: Switching an inductive load: I I d/dtoff 9% t on 1% d/dton t off I tslc() tslc() I oad 1 oad 2 I t son() t soff() t I t The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 2b: Switching motors and lamps: Figure 3d: Short circuit: shut down by overtemperature detection with auto restart on cooling I I I (SCp) I (SCr) I I I >> = I Sense current saturation can occur at very high inrush currents (see I,lim on page Fehler! Textmarke nicht definiert.). t t Infineon Technologies AG Page 13 of Oct-1

14 Data Sheet BTS651 Figure 4e: Overtemperature Reset if T j <T jt I I Auto Restart T j t Figure 6f: Undervoltage restart of charge pump, overvoltage clamp = 6 4 dynamic, short Undervoltage not below b(u) ON(C) 2 I = ON(C) b(u) b(ucp) Infineon Technologies AG Page 14 of Oct-1

15 Data Sheet BTS651 Package and Ordering Code All dimensions in mm SMD TO 22-7, Ordering code BTS 651 B T&R: Q676-S6311 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D München Infineon Technologies AG 21 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Footprint: Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. ife support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Infineon Technologies AG Page 15 of Oct-1