Mini PROFET BSP 452 BSP 452

Transcription

1 MiniPROFET High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load Clamp of negative output voltage with inductive loads Undervoltage shutdown Maximum current internally limited Electrostatic discharge (ESD) protection Reverse battery protection ) Mini PROFET BSP 5 3 Package: SOT 3 Type BSP 5 Ordering code Q67-S7 Application µc compatible power switch for V DC grounded loads All types of resistive, inductive and capacitive loads Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Blockdiagramm: Voltage source Overvoltage protection Current limit Gate protection + V bb 3 IN ESD- Diode R in ESD V Logic Voltage sensor Logic Charge pump Level shifter Rectifier Limit for unclamped ind. loads Temperature sensor OUT Load GND Signal GND MINI-PROFET Load GND ) With resistor RGND=5 Ω in GND connection, resistor in series with IN connections reverse load current limited by connected load. Semiconductor Group Page of

2 Pin Symbol Function OUT O Output to the load GND - Logic ground 3 IN I Input, activates the power switch in case of logical high signal Vbb + Positive power supply voltage Maximum Ratings at Tj = 5 C unless otherwise specified Parameter Symbol Values Unit Supply voltage V bb V Load current self-limited I L I L(SC) A Maximum input voltage ) V IN -5...V bb V Maximum input current I IN ±5 ma Inductive load switch-off energy dissipation, E AS.5 J single pulse I L =.5A, T A = 5 C (not tested, specified by design) Load dump protection 3 ) V LoadDump =U A +V s R L = Ω V ) Load dump 6 V R I =Ω, t d =ms, IN= low or high, U A =3,5V R L = 8Ω 8 (not tested, specified by design) Electrostatic discharge capability (ESD) 5 ) PIN 3 V ESD ± kv PIN,, ± Operating temperature range T j C Storage temperature range T stg Max. power dissipation (DC) 6 ) T A = 5 C P tot.8 W Thermal resistance chip - soldering point: chip - ambient: 6) R thjs 7 R thja 7 K/W ) At V IN > V bb, the input current is not allowed to exceed ±5 ma. 3 ) Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 5 Ω resistor in the GND connection A resistor for the protection of the input is integrated. ) VLoad dump is setup without the DUT connected to the generator per ISO and DIN ) HBM according to MIL-STD 883D, Methode ) BSP 5 on epoxy pcb mm x mm x.5 mm with 6 cm copper area for V bb connection Semiconductor Group Page.8.96

3 Electrical Characteristics Parameter and Conditions Symbol Values Unit at T j = 5 C, Vbb = 3.5V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin to ) I L =.5 A, Vin = high T j = 5 C T j = 5 C Nominal load current (pin to ) 7 ) ISO Standard: VON = V bb - V OUT =.5 V T S = 85 C Turn-on time to 9% V OUT Turn-off time to % V OUT R L = Ω Slew rate on to 3% V OUT, R L = Ω Slew rate off 7 to % V OUT, R L = Ω R ON I L(ISO) A t on -- t off Ω µs dv /dt on -- V/µs -dv/dt off -- V/µs Input Allowable input voltage range, (pin 3 to ) V IN V bb V Input turn-on threshold voltage V IN(T+) V T j = C Input turn-off threshold voltage V IN(T-) V T j = C Input threshold hysteresis V IN(T) V Off state input current (pin 3) VIN(off) =. V I IN(off) -- 6 µa T j = C On state input current (pin 3) VIN(on) = 3. V to V bb I IN(on) -- µa T j = C Input resistance R IN kω 7) I L(ISO) is limited by current limitation, see I L(SC) Semiconductor Group Page

4 Parameter and Conditions Symbol Values Unit at T j = 5 C, Vbb = 3.5V unless otherwise specified min typ max Operating Parameters Operating voltage 8 ) T j = C V bb(on) V Undervoltage shutdown T j = C V bb(under) V Undervoltage restart T j = C T j =+5 C V bb(u rst) V Undervoltage restart of charge pumpe V bb(ucp) V see diagram page 7 Undervoltage hysteresis V bb(under) = V bb(u rst) - V bb(under) V bb(under) V Overvoltage shutdown T j = C V bb(over) 3 -- V Overvoltage restart T j = C V bb(o rst) V Overvoltage hysteresis T j = C V bb(over) V Standby current (pin ), Vin = low T j = C I bb(off) -- 5 µa Operating current (pin ), Vin = 5 V I GND --.6 ma leakage current (pin ) Vin = low T j = C T j =5 C I L(off) Protection Functions Current limit (pin to ) T j = 5 C I L(SC).7.5 A Vbb = V T j = C Overvoltage protection I bb =ma T j = C V bb(az) V Output clamp (ind. load switch off) at V OUT =V bb -V ON(CL), I bb = ma V ON(CL) 7 -- V Thermal overload trip temperature T jt C Thermal hysteresis T jt K Inductive load switch-off energy dissipation 9 ) T j Start = 5 C, single pulse, I L =.5 A, V bb = V (not tested, specified by design) Reverse battery (pin to ) ) (not tested, specified by design) µa E AS J -V bb V 8 ) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - V 9 ) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * il(t) dt, approx. EAS= / * L * I L * ( VON(CL) VON(CL) - Vbb ) ) Requires 5 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Semiconductor Group Page.8.96

5 Max. allowable power dissipation P tot = f (T A,T SP ) P tot [W] 8 6 Current limit characteristic I L(SC) = f (V on ); (V on see testcircuit) I L(SC) [A] C T SP. 5 C - C T A T A, T SP [ C] 6 8 V on [V] On state resistance (Vbb-pin to OUT-pin) R ON = f (Tj); V bb = 3.5 V; I L =.5 A R ON [Ω]..35 Typ. input current I IN = f (V IN ); V bb = 3,5 V I IN [µa] C.3 +5 C.5 98% C V IN [V] Semiconductor Group Page

6 Typ. operating current I GND = f (T j ); V bb = 3,5 V; V IN = high I GND [ma].8 Typ. overload current I L(lim) = f (t); V bb = 3,5 V, no heatsink, Param.: T jstart I L(lim) [A] C +5 C - C t [ms] Typ. standby current I bb(off) = f (T j ); V bb = 3,5 V; V IN = low I bb(off) [µa] 8 Short circuit current I L(SC) = f (T j ); V bb = 3,5 V I L(SC) [A] Semiconductor Group Page

7 Typ. input turn on voltage threshold V IN(T+) = f (T j ); V IN(T+) [V] 3 Figure 6: Undervoltage restart of charge pumpe V ON [V] 3V.5.5 V bb(over) V bb(u rst) V bb(o rst).5 V bb(u cp) V bb(under) charge pump starts at V bb(ucp) about 7 V typ. V bb [V] Typ. on-state resistance (Vbb-Pin to Out-Pin) R ON = f (V bb,i L) ; I L =.5A, T j = 5 C R ON [mω] 3 Test circuit V bb [V] Semiconductor Group Page

8 Package: all dimensions in mm. SOT 3/: Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 85 München Siemens AG 997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components ) of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems ) with the express written approval of the Semiconductor Group of Siemens AG. ) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. ) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group Page