Data Sheet, Rev. 1.0, May 2008 BTM7810K. TrilithIC. Automotive Power

Transcription

1 Data Sheet, Rev.., May 28 BTM78K TrilithIC Automotive Power

2 BTM78K Table of Contents Table of Contents Overview Pin Configuration Pin Assignment Terms Block Diagram Circuit Description Input Circuit Output Stages Short Circuit Protection Overtemperature Protection Undervoltage ockout Open oad Detection Status Flag Electrical Characteristics Absolute Maximum Ratings Functional Range Thermal Resistance Electrical Characteristics Application Information Package Outlines Revision History Data Sheet 2 Rev..,

3 TrilithIC BTM78K Overview Features Quad D-MOS switch Free configurable as bridge or quad-switch Optimized for DC motor management applications ow R DS ON High side: 26 mω 25 C, 65 mω C ow side: 4mΩ 25 C, 28 mω C Maximum peak current: typ C Very low quiescent current: typ C Thermally optimized power package Operates up to 4 V oad and GND-short-circuit-protection Overtemperature shut down with hysteresis Undervoltage detection with hysteresis Open load detection in OFF mode Status flag for overtemperature Internal clamp diodes Isolated sources for external current sensing Green Product (RoHS compliant) AEC Qualified PG-TO Description The BTM78K is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames. The sources are connected to individual pins, so the BTM78K can be used in H-bridge- as well as in any other configuration. The double high-side switch is manufactured in SMART SIPMOS technology which combines low R DS ON vertical DMOS power stages with CMOS circuitry for control, protection and diagnosis. To achieve low R DS ON and fast switching performance, the low-side switches are manufactured in S-FET logic level technology. Type Package Marking BTM78K PG-TO BTM78K Data Sheet 3 Rev..,

4 BTM78K Description 2 Pin Configuration 2. Pin Assignment Molding Compound NC S I Heat-Slug D NC 4 IH ST 5 6 Heat-Slug 2 SH 7 DHVS 8 7 DHVS GND 9 IH2 ST2 SH2 I2 S Heat-Slug 3 D2 NC 5 Figure Pin Assignment BTM78K (Top View) Data Sheet 4 Rev..,

5 BTM78K Description Table Pin Definitions and Functions Pin No. Symbol Function NC Not connected 2 S Source of low-side switch 3 I Analog input of low-side switch 4 NC Not connected 5 IH Digital input of high-side switch 6 ST Status of high-side switch ; open Drain output 7 SH Source of high-side switch 8 DHVS Drain of high-side switches and power supply voltage 9 GND Ground of high-side switches IH2 Digital input of high-side switch 2 ST2 Status of high-side switch 2; open Drain output 2 SH2 Source of high-side switch 2 3 I2 Analog input of low-side switch 2 4 S2 Source of low-side switch 2 5 NC Not connected 6 D2 Drain of low-side switch 2 Heat-Slug 3 7 DHVS Drain of high-side switches and power supply voltage Heat-Slug 2 8 D Drain of low-side switch Heat-Slug Pins written in bold type need power wiring. Data Sheet 5 Rev..,

6 BTM78K Description 2.2 Terms V S I S C S 47nF C µf I FH,2 I ST K DHVS I ST ST 6 8, 7 V DSH2 V DSH I ST K2 -V FH2 -V FH I ST2 ST2 Diagnosis Biasing and Protection V ST V ST V STZ V ST2 I IH IH 5 Gate Driver V ST2 V STZ2 V IH I IH IH2 Gate Driver R O R O2 2 6 SH2 D2 I SH2 I D2 V IH2 GND 6 I D K 2 V UVON I GND 7 SH I SH V UVOFF I KC 8 D I D I D K I I I 3 V I I I2 I2 3 V I th V I2 2 4 V DS V DS2 V I th 2 S S2 -V F -V F2 I SCP I SCP 2 I S I S2 Figure 2 Terms BTM78K Table 2 HS-Source-Current Named during Short Circuit Named during eakage-cond. I SH,2 I SCP H I D K Data Sheet 6 Rev..,

7 BTM78K Description 3 Block Diagram DHVS ST 6 8, 7 ST2 Diagnosis Biasing and Protection IH IH2 GND 5 9 Driver IN OUT H H H H R O R O2 2 6 SH2 D2 7 SH 8 D I 3 I S S2 Figure 3 Block Diagram BTM78K Data Sheet 7 Rev..,

8 BTM78K 4 Circuit Description 4. Input Circuit The control inputs IH,2 consist of TT/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs are protected by ESD clamp-diodes. The inputs I and I2 are connected to the gates of the standard N-channel vertical power-mos-fets. 4.2 Output Stages The output stages consist of an low R DSON Power-MOS H-bridge. In H-bridge configuration, the D-MOS body diodes can be used for freewheeling when communicating inductive loads. If the high-side switches are used as single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by integrated power clamp diodes. 4.3 Short Circuit Protection The outputs are protected against short circuit to ground and short circuit over load. In short circuit to ground and short circuit over load situation the HS switches will limit the load current. Due to the high power dissipation in short circuit situation the junction temperature will rise. The over temperature protection function will switch off the output transistors if the junction temperature reaches the over temperature shutdown limit. 4.4 Overtemperature Protection The high-side switches also incorporate an over temperature protection circuit with hysteresis which switches off the output transistors and sets the status output to low. 4.5 Undervoltage ockout When V S reaches the switch-on voltage V UVON the IC becomes active with a hysteresis. The high-side output transistors are switched off if the supply voltage V S drops below the switch off value V UVOFF. 4.6 Open oad Detection The open load detection of the BTM78K works in OFF condition and is based on a voltage measurement at the source of the high side switch. In order to use the open load detection SH2 has to be connected to Vcc via a pull up resistor. Because this pull up resistor would connect the bridge output to the µc supply it needs to be disconnected whenever the high side switch is on. This can be done by a transistor as shown in the application example (Figure 4 Application Example BTM78K on Page 5). To check for open load: Set IH = IH2 = OW (both high side switches off) Set I2 = OW, I = HIGH (only low side switch is on) Connect R ol (open load pull up) to 5V via transistor If the load is connected properly it will pull down the voltage at SH2 to a value close to V. If the load is disconnected the resistor will pull the voltage at SH2 to value close to Vcc. If the voltage at SH2 is higher than the open load detection voltage V OUT(O) then ST will be pulled down. Data Sheet 8 Rev..,

9 BTM78K 4.7 Status Flag The status flag outputs are open drain outputs with zener-diode which require a pull-up resistor, as shown in the application circuit in Figure 4 Application Example BTM78K on Page 5. Various errors as listed in the table Diagnosis are reported by switching the open drain output ST to low. Table 3 Truthtable and Diagnosis (valid only for the High-Side-Switches) Flag IH IH2 SH SH2 ST ST2 Remarks Inputs Outputs Normal operation; identical with functional truth table Open load at high-side switch Open load at high-side switch 2 Overtemperature high-side switch Overtemperature high-side switch2 Overtemperature both high-side switches H H Z H H H Z H stand-by mode switch2 active switch active both switches active detected detected detected detected detected detected detected Undervoltage not detected Note: * multiple simultaneous errors are not shown in this table Inputs: Outputs: Status: = ogic OW Z = Output in tristate condition = No error = ogic HIGH = Output in sink condition = Error = don t care H = Output in source condition = Voltage level undefined Data Sheet 9 Rev..,

10 BTM78K 5 Electrical Characteristics 5. Absolute Maximum Ratings Absolute Maximum Ratings ) -4 C < T j < C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol imit Values Unit Remarks min. max. High-Side-Switches (Pins DHVS, IH,2 and SH,2) 5.. Supply voltage V S.3 42 V 5..2 Supply voltage for full short circuit V S(SCP) 28 V protection 5..3 HS-drain current 2) I S 4 3) A T A = 25 C; t P < ms 5..4 HS-input current I IH 5 5 ma Pin IH and IH HS-input voltage V IH 6 V Pin IH and IH2 Status Output ST 5..6 Status pull up voltage V ST V 5..7 Status Output current I ST 5 5 ma Pin ST or ST2 ow-side-switches (Pins D,2, I,2 and S,2) 5..8 Drain-Source-Clamp voltage V DS 55 V V I =V; I D ma T j = 25 C 5..9 S-drain current 2) I D 2 26 A T A = 25 C; t P < ms A T A = 25 C; t P < ms A T A = 25 C; t P < ms 5..2 S-input voltage V I 2 2 V Pin I and I2 Temperatures 5..3 Junction temperature T j 4 C 5..4 Storage temperature T stg 55 5 C ESD Protection 4) 5..5 Input S-Switch V ESD.5 kv 5..6 Input HS-Switch V ESD kv 5..7 Status HS-Switch V ESD 2 kv 5..8 Output S and HS-Switch V ESD 4 kv all other pins connected to Ground ) Not subject to production test; specified by design 2) Single pulse 3) Internally limited 4) ESD susceptibility HBM according to EIA/JESD22-A4-B (.5kΩ, pf) Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as outside normal operating range. Protection functions are not designed for continuous repetitive operation. Data Sheet Rev..,

11 BTM78K 5.2 Functional Range Pos. Parameter Symbol imit Values Unit Remarks min. max Supply voltage V S V UVOFF 42 V After V S rising above V UVON Input voltage HS V IH.3 5 V Input voltage S V I.3 2 V Status output current I ST 2 ma Junction temperature T j 4 C Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table 5.3 Thermal Resistance Pos. Parameter Symbol imit Values Unit Conditions Min. Typ. Max S-junction to case ) R thjc.5 K/W HS-junction to case ) R thjc H.45 K/W Junction to ambient ) R thja = T j(hs) / (P (HS) + P (S) ) R thja 6 K/W 2) ) Not subject to production test, specified by design. 2) Specified R thja value is according to Jedec JESD5-2,-5,-7 at natural convection on FR4 2s2p board; The Product (chip+package) was simulated on a 76.2 x 4.3 x.5 mm board with 2 inner copper layers (2 x 7µm Cu, 2 x 35µm Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. Data Sheet Rev..,

12 BTM78K 5.4 Electrical Characteristics Electrical Characteristics I SH = I SH2 = I S = I S2 = A; 4 C < T j < C; 8 V < V S < 8 V (unless otherwise specified) Pos. Parameter Symbol imit Values Unit Test Condition min. typ. max. Current Consumption HS-switch 5.4. Quiescent current I S 4 9 μa IH = IH2 = V T j = 25 C 5 μa IH = IH2 = V Supply current; one HS-switch active Supply current; both HS-switches active eakage current of high-side switch eakage current through logic GND in free wheeling condition Current Consumption S-switch I S ma IH or IH2 = 5 V V S = 2 V I S 5 9 ma IH and IH2 = 5 V V S = 2 V I SH K 7 μa V IH = V SH = V V S = 2 V T j = 85 C I KC = I FH ma I FH = 5 A I SH V S = 2 V Input current I I na V I = 2 V; V DS = V eakage current of low-side switch I D K 2 μa V I = V V DS = 4V T j = 85 C Under Voltage ockout HS-switch Switch-ON voltage V UVON 5 V V S increasing Switch-OFF voltage V UVOFF V V S decreasing 5.4. Switch ON/OFF hysteresis V UVHY V V UVON V UVOFF Output stages 5.4. Inverse diode of high-side switch; V FH.8.2 V I FH = 5 A Forward-voltage Inverse diode of low-side switch; Forward-voltage V F.8.2 V I F = 5 A Static drain-source on-resistance of high-side switch Static drain-source on-resistance of low-side switch R DS ON H 26 mω I SH =5A; V S = 2 V T j = 25 C mω I SH =5A; V S = 2 V T j = C 2) R DS ON 4 mω I S =5A; V I = 5 V T j = 25 C 2 28 mω I S =5A; V I = 5 V T j = C 2) Data Sheet 2 Rev..,

13 BTM78K Electrical Characteristics I SH = I SH2 = I S = I S2 = A; 4 C < T j < C; 8 V < V S < 8 V (unless otherwise specified) Pos. Parameter Symbol imit Values Unit Test Condition min. typ. max. Short Circuit of high-side switch to GND Initial peak SC current ) I SCP H A T j = -4 C t del = 5 µs; V S = 2 V; V DSH = 2V 42 A T j = 25 C A T j = C 2) Short Circuit of high-side switch to V S Output pull-down-resistor R O kω V DS = 3 V Thermal Shutdown 2) Thermal shutdown junction T j SD C temperature Thermal switch-on junction T j SO C temperature Temperature hysteresis ΔΤ C ΔΤ = T jsd T jso Status Flag Output ST of high-side switch ow output voltage V ST.2.6 V I ST =.6 ma eakage current I ST K 5 μa V ST = 5 V Zener-limit-voltage V ST Z 5.4 V I ST =.6 ma Status change after positive input t d(stoffo+) 2 μs slope with open load 2) Status change after negative input t d(stoffo-) 7 μs slope with open load 2) Status change after positive input t d(stofft+).6 μs R ST = 47 kω slope with overtemperature 2) Status change after negative input slope with overtemperature 2) t d(stofft-) 4 μs R ST = 47 kω Open oad Detection in Off Condition Open oad Detection Voltage V OUT(O) V V S = 2 V Switching times of high-side switch 2) Turn-ON-time to 9% V SH t ON 22 μs R oad = 2 Ω Turn-OFF-time to % V SH t OFF 2 25 μs V S = 2 V Slew rate on to 3% V SH dv/d ton.5. V/μs Slew rate off 7 to 4% V SH -dv/d toff.7.3 V/μs Switching times of low-side switch 2) Turn-ON Delay Time t d(on) 2 ns resistive load Rise Time t I S = 3A; V DS =2V r 85 ns Switch-OFF Delay Time t V I = 5V; R G = 6Ω d(off) 6 ns Fall Time t f 8 ns Gate charge of low-side switch 2) Input to source charge; Q IS 4.5 nc I S = 3 A; V DS =2 V Data Sheet 3 Rev..,

14 BTM78K Electrical Characteristics I SH = I SH2 = I S = I S2 = A; 4 C < T j < C; 8 V < V S < 8 V (unless otherwise specified) Pos. Parameter Symbol imit Values Unit Test Condition min. typ. max Input to drain charge; Q ID 2 nc I S = 3 A; V DS =2 V Input charge total; Q I 3 6 nc I S = 3 A; V DS =2 V V I = to 5 V Input plateau voltage; V (plateau) 2.6 V I S = 3 A; V DS =2 V Control Inputs of high-side switches IH, H-input voltage V IH High 3. V input voltage V IH ow V Input voltage hysteresis V IH HY.5 V H-input current I IH High μa V IH = 5 V input current I IH ow μa V IH =.4 V Input series resistance R I kω Zener limit voltage V IH Z 5.4 V I IH =.6 ma Control Inputs I, Gate-threshold-voltage V I th V I D = ma ) When Vs>8V the peak short circuit current is significantly lower. 2) Not subject to production test; specified by design Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specified mean values expected over the production spread. If not otherwise specified, typical characteristics apply at T A = 25 C and the given supply voltage. Data Sheet 4 Rev..,

15 BTM78K 6 Application Information Note: The following simplified application examples are given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. The function of the described circuits must be verified in the real application Watchdog Reset Q TE 4278G I V S =2V R Q kω R Q kω C Q 22µF D C D 47nF D Z39 C S µf WD R V CC R S kω RS ST 6 ST2 Diagnosis DHVS 8, 7 Biasing and Protection to µc BCR92W Can be replaced by diode when Short to Vs detection is not needed kω R O 56Ohm IH 5 Gate Driver optional for open load in off C866 µp IH2 GND 9 Gate Driver R O R O SH2 D2 SH M 8 D I 3 I GND S S2 Figure 4 Application Example BTM78K Data Sheet 5 Rev..,

16 BTM78K 7 Package Outlines 2.6 ±.2 ± ) ±.5.27 ±. (5) 9.25 ±.2 ± ) 8.8 ±.5 A 8.2 ) 8.4 ) 4.7±.5 2.7±.3 B x ±. 8 max..5 ±..25 M A B. ) Typical All metal surfaces tin plated, except area of cut. Footprint Figure 5 PG-TO (Plastic Transistor Single Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-2). For further information on alternative packages, please visit our website: Dimensions in mm Data Sheet 6 Rev..,

17 BTM78K 8 Revision History Rev. Date Changes Initial Version Data Sheet 7 Rev..,

18 Edition Published by Infineon Technologies AG 8726 Munich, Germany 5/4/8 Infineon Technologies AG All Rights Reserved. egal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ife support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

19 Mouser Electronics Related Product inks 726-BTM78K - Infineon BTM78K