BAS70.../BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04W BAS70-04S BAS70-05W BAS70-06 BAS70-06W BAS70-07 BAS70-07W
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1 BAS7.../BAS7W Silicon Schottky Diode General-purpose diode for high-speed switching Circuirotection Voltage clamping High-level detecting and mixing BAS7-S: For orientation in reel see package information below Pb-free (RoHS compliant) package ) Qualified according AEC Q BAS7W BAS7-L BAS7-W BAS7 BAS7- BAS7-W BAS7-S BAS7-5 BAS7-5W!! $ # "!,,,,,!, ",,! BAS7-6 BAS7-6W BAS7-7 BAS7-7W! "!,,,, Pb-containing package may be available upon special request 7-9-9
2 BAS7.../BAS7W Type Package Configuration L S (nh) Marking BAS7W BAS7 BAS7-L BAS7-W BAS7- BAS7-S BAS7-W BAS7-5 BAS7-5W BAS7-6 BAS7-6W BAS7-7 BAS7-7W SOD SOT TSLP-- SCD8 SOT SOT6 SOT SOT SOT SOT SOT SOT SOT single single single, leadless single series dual series series common cathode common cathode common anode common anode parallel pair parallel pair white 7 7s F 7 7s 7s 7s 75s 75s 76s 76s 77s 77s Maximum Ratings at T A = 5 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R 7 V Forward current I F 7 ma Non-repetitive peak surge forward current t ms I FSM Total power dissipation BAS7, BAS7-7, T S 7 C BAS7-L, T S 7 C BAS7-W, T S 7 C BAS7-, BAS7-6, T S 8 C BAS7-S/W/-6W, BAS7W, T S 97 C BAS7-5, T S C BAS7-5W, T S 9 C BAS7-7W, T S C P tot mw Junction temperature T j 5 C Operating temperature range T op Storage temperature T stg
3 BAS7.../BAS7W Thermal Resistance Parameter Symbol Value Unit Junction - soldering point ) BAS7, BAS7-7 BAS7-L, BAS7-W BAS7-, BAS7-6 BAS7-S/W, BAS7-6W BAS7-5 BAS7-5W BAS7-7W BAS7W R thjs K/W Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage V (BR) V I (BR) = µa Reverse current V R = 5 V I R - -. µa Forward voltage I F = ma I F = ma I F = 5 ma Forward voltage matching ) I F = ma V F mv V F - - For calculation of R thja please refer to Application Note Thermal Resistance V F is the difference between lowest and highest V F in a multiple diode component
4 BAS7.../BAS7W Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Diode capacitance C T -.5 pf V R =, f = MHz Forward resistance r f - - Ω I F = ma, f = khz Charge carrier life time I F = 5 ma τ rr - - ps 7-9-9
5 BAS7.../BAS7W Diode capacitance C T = ƒ (V R ) f = MHz Forward resistance r f = ƒ (I F ) f = khz. BAS 7W/BAS 7W EHB C T pf Ohm.5 rf V 8 V R - - ma I F Reverse current I R = ƒ(v R ) Forward current I F = ƒ (V F ) T A = Parameter T A = Parameter BAS 7W/BAS 7W EHB BAS 7W/BAS 7W EHB Ι R µ A T A = 5 C Ι F ma 85 C C - T A = - C 5 C 85 C 5 C - 6 V V.5 V R V F
6 BAS7.../BAS7W Forward current I F = ƒ (T S ) BAS7, BAS7-7 Forward current I F = ƒ (T S ) BAS7-L ma 8 ma IF 5 IF C C 5 T S T S Forward current I F = ƒ (T S ) BAS7-W Forward current I F = ƒ (T S ) BAS7-, BAS7-6 ma 8 ma IF 5 IF C C 5 T S T S
7 BAS7.../BAS7W Forward current I F = ƒ (T S ) BAS7-S/W, BAS7-6W, BAS7W Forward current I F = ƒ (T S ) BAS7-5 ma 8 ma IF 5 IF C C 5 T S T S Forward current I F = ƒ (T S ) BAS7-5W Forward current I F = ƒ (T S ) BAS7-7W ma 8 ma IF 5 IF C C 5 T S T S
8 BAS7.../BAS7W Forward current I F = ƒ (T S ) BAS7W Permissible Puls Load R thjs = ƒ ( ) BAS7 8 ma K/W 6 IF 5 RthJS D = C 5 T S s Permissible Pulse Load I Fmax / I FDC = ƒ ( ) BAS7 Permissible Puls Load R thjs = ƒ ( ) BAS7-L K/W IFmax/IFDC - RthJS D = D = s s
9 BAS7.../BAS7W Permissible Pulse Load I Fmax / I FDC = ƒ ( ) BAS7-L Permissible Puls Load R thjs = ƒ ( ) BAS7-W K/W IFmax/IFDC - D = RthJS D= s s Permissible Pulse Load I Fmax / I FDC = ƒ ( ) BAS7-W Permissible Puls Load R thjs = ƒ ( ) BAS7-, BAS7-6 K/W IFmax/IFDC D= RthJS D = s s t P
10 BAS7.../BAS7W Permissible Pulse Load I Fmax / I FDC = ƒ ( ) BAS7-, BAS7-6 Permissible Puls Load R thjs = ƒ ( ) BAS7-S K/W IFmax/IFDC - D = RthJS D = s t P s Permissible Pulse Load I Fmax / I FDC = ƒ ( ) BAS7-S Permissible Puls Load R thjs = ƒ ( ) BAS7-W, BAS7-6W K/W IFmax/IFDC - RthJS D = D = s s 7-9-9
11 BAS7.../BAS7W Permissible Pulse Load I Fmax / I FDC = ƒ ( ) BAS7-W, BAS7-6W Permissible Puls Load R thjs = ƒ ( ) BAS7-5 K/W IFmax/IFDC - D = RthJS D = s s Permissible Pulse Load I Fmax / I FDC = ƒ ( ) BAS7-5 Permissible Puls Load R thjs = ƒ ( ) BAS7-5W K/W IFmax/IFDC - D = RthJS D = s s 7-9-9
12 BAS7.../BAS7W Permissible Pulse Load I Fmax / I FDC = ƒ ( ) BAS7-5W Permissible Puls Load R thjs = ƒ ( ) BAS7-7W K/W IFmax/IFDC - D = RthJS D = s s Permissible Pulse Load I Fmax / I FDC = ƒ ( ) BAS7-7W Permissible Puls Load R thjs = ƒ ( ) BAS7W IFmax/IFDC - D = RthJS D = s s 7-9-9
13 BAS7.../BAS7W Permissible Pulse Load I Fmax / I FDC = ƒ ( ) BAS7W IFmax/IFDC D = s 7-9-9
14 Package SCD8 BAS7.../BAS7W Package Outline.8 ±..7 ±. MAX.. M A ±.5 7. ±. A Cathode marking. ±.5.7±.. ±.5 Foot Print Marking Layout (Example) 5, June Date code BAR6-W Type code Cathode marking Laser marking Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø8 mm = 8. Pieces/Reel ( mm Pitch) Reel ø mm =. Pieces/Reel Standard Reel with mm Pitch Cathode marking..9 Cathode marking
15 BAS7.../BAS7W Date Code marking for discrete packages with one digit (SCD8, SC79, SC75 ) ) CES-Code Month a p A P a p A P a p A P b q B Q b q B Q b q B Q c r C R c r C R c r C R d s D S d s D S d s D S 5 e t E T e t E T e t E T 6 f u F U f u F U f u F U 7 g v G V g v G V g v G V 8 h x H X h x H X h x H X 9 j y J Y j y J Y j y J Y k z K Z k z K Z k z K Z l L l L l L n N 5 n N 5 n N 5 ) New Marking Layout for SC75, implemented at October
16 Package SOD BAS7.../BAS7W Package Outline ± ± Cathode marking.5 ± A M A Foot Print Marking Layout (Example) BAR6-W Type code Cathode marking Laser marking Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel. 8.9 Cathode marking
17 Package SOT BAS7.../BAS7W Package Outline ±..9.7 B M B. ±.5.5 MIN. MAX M A ±.. MAX. MAX ±. A Foot Print Marking Layout (Example) RF s 56 Manufacturer 5, June Date code (YM) Pin BFP8 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel..6 8 Pin
18 Package SOT BAS7.../BAS7W Package Outline +. ) ±..9 B C.95. ±.5.5 MIN. MAX. ±.. MAX....8 MAX ±. A.5 M BC. M A Foot Print ) Lead width can be.6 max. in dambar area Marking Layout (Example) EH s Manufacturer 5, June Date code (YM) Pin BCW66 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel Pin
19 Package SOT BAS7.../BAS7W Package Outline ± x. M. MAX...9 ±. A ±.. MIN ±.. M A Foot Print.6 Marking Layout (Example) Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel Manufacturer 5, June Date code (YM) Pin BCR8W Type code Pin
20 Package SOT BAS7.../BAS7W Package Outline ±... MAX...9 ±. A x. M ±.. MIN.. M Foot Print.6 Marking Layout (Example) 5, June Date code (YM) BGA Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel A ±..5.9 Manufacturer Pin Pin
21 Package SOT6 BAS7.../BAS7W Package Outline ± x. M. MAX...9 ±. A Pin marking ±.. MIN Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 5, June Date code (Year/Month) Pin marking Laser marking BCR8S Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel For symmetric types no defined Pin orientation in reel ±.. M A Pin marking
22 Package TSLP-- BAS7.../BAS7W Package Outline Top view +.. Bottom view.5 MAX..6 ±.5.65±.5 ±.5 Cathode marking ).5 ±.5 ) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" Copper Solder mask Stencil apertures Marking Layout (Example) BAS6-L Type code Cathode marking Laser marking Standard Packing Reel ø8 mm = 5. Pieces/Reel Reel ø mm = 5. Pieces/Reel (optional) ).5 ±.5 Cathode marking
23 BAS7.../BAS7W Edition 6-- Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered
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Tracking Regulator TLE 4252
Tracking Regulator TLE 4252 Features Output tracking tolerance to reference ±0.2% Output voltage adjust down to 1.5 V 250 ma output current capability Enable function Very low current consumption in OFF
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Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand
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n-channel Power MOSFET OptiMOS Data Sheet 2.5, 2011-09-16 Final Industrial & Multimarket 1 Description OptiMOS 150V products are class leading power MOSFETs for highest power density and energy efficient
Type Marking Pin Configuration Package BFR380F FCs 1 = B 2 = E 3 = C TSFP-3
Linear Low Noise Silicon Bipolar RF Transistor High linearity low noise driver amplifier Output compression point 9.5 m @.8 GHz Ideal for oscillators up to 3.5 GHz Low noise figure. at.8 GHz Collector
Low Drop Voltage Regulator TLE 4276
Low Drop Voltage Regulator TLE 4276 Features 5 V, 8.5 V, V or variable output voltage Output voltage tolerance ±4% 4 ma current capability Low-drop voltage Inhibit input Very low current consumption Short-circuit-proof
Fiber Optics. Plastic Fiber Optic Phototransistor Detector Plastic Connector Housing SFH350 SFH350V
Fiber Optics Plastic Fiber Optic Phototransistor Detector Plastic Connector Housing SFH350 Features 2.2 mm Aperture holds Standard 1000 Micron Plastic Fiber No Fiber Stripping Required Good Linearity Sensitive
BGA855N6 BGA855N6. Low Noise Amplifier for Lower L-Band GNSS Applications GND. Features
Features Operating frequencies: 1164-1300 MHz Insertion power gain: 17.8dB Low noise figure: 0.60 db High linearity performance IIP3: 0 dbm Low current consumption: 4.8 ma Ultra small TSNP-6-10 leadless
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (transient voltage suppressor) Bi-directional, 5.5 V, 3.5 pf, 21, RoHS and halogen free compliant Features ESD/transient protection of susceptible I/O lines to: - IEC61-4-2 (ESD): ±3 kv (air/contact
Data Sheet, Rev.3.2, Oct BGM781N11. GPS Front-End Module. RF & Protection Devices
Data Sheet, Rev.3.2, Oct. 2010 BGM781N11 GPS Front-End Module RF & Protection Devices Edition 2010-10-28 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All
IHW15T120. Soft Switching Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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n-channel Power MOSFET OptiMOS Data Sheet 1.4, 2011-03-01 Preliminary Industrial & Multimarket 1 Description OptiMOS 60V products are class leading power MOSFETs for highest power density and energy efficient
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n-channel Power MOSFET OptiMOS Data Sheet 2.6, 2014-01-10 Final Industrial & Multimarket 1 Description OptiMOS 100V products are class leading power MOSFETs for highest power density and energy efficient
225mW SMD Switching Diode
225mW SMD Switching Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant
ILD2035. MR16 3 W Control Board with ILD2035. Application Note AN214. Industrial and Multimarket. Revision: 1.0 Date:
ILD2035 MR16 3 W Control Board with ILD2035 Application Note AN214 Revision: 1.0 Date: Industrial and Multimarket Edition Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies
Small Signal Fast Switching Diode FEATURES
Small Signal Fast Switching Diode = Cathode = Anode 6 MARKING (example only) FEATURES These diodes are also available in other case styles including the DO- case with the type designation N8, the MiniMELF
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The BFP7 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min =.8 db at. GHz, 3 V, 6 ma High gain G ms = 9. db at. GHz, 3 V, ma OIP 3 =.
Robust low noise broadband pre-matched RF bipolar transistor
Product description The is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness: dbm maximum RF
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min = 1 db at 5.5 GHz, 3 V, 6 ma High gain G ms = 21 db at 5.5 GHz, 3 V, 15 ma OIP
The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.
Product description The is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fourth generation RF bipolar transistor family. Its transition frequency f T of
n-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.1, 2011-09-08 Final Industrial & Multimarket 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient
Circuit Diagram IN. Type Marking Pin Configuration Package BGA420 BLs 1, IN 2, GND 3, OUT 4, VD SOT ma Device voltage V D
BGA SiMMICAmpliier in SIEGET 5Technologie Cascadable 5 Ωgain block Unconditionally stable Gain S = at. GHz IP out = + m at. GHz (V D = V, I D = typ. 6.7 ma) Noise igure NF =. at. GHz V D Reverse isolation
IDW100E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev
Fast Switching Emitter Controlled Diode Features: 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy
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N45WS-G Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes/options: 8/K per 3" reel (8 mm tape), K/box 8/3K per 7" reel (8 mm tape), 5K/box FEATURES Silicon
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package
HiRel K-Band GaAs Super Low Noise HEMT HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For professional super low-noise amplifiers For frequencies from 500 MHz to > 20
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Small Signal Switching Diode 2 DESIGN SUPPORT TOOLS click logo to get started 3 FEATURES Silicon epitaxial planar diode Fast switching diode in case SOT-23, especially suited for automatic insertion AEC-Q
IDW75E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev
Fast Switching Emitter Controlled Diode Features: 600V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy paralleling
Data Sheet, V 1.1, Oct TLE4906H TLE4906L. High Precision Hall-Effect Switch. Sensors
Data Sheet, V 1.1, Oct. 2005 TLE4906H High Precision Hall-Effect Switch Sensors Edition 2005-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies
BAS70 Series. Low capacitance, low series inductance and resistance Schottky diodes. Main product characteristics. Features and benefits.
Low capacitance, low series inductance and resistance Schottky diodes Main product characteristics I F 70 ma V RRM 70 V SOD-123 BAS70ZFILM C (max) T j (max) 2 pf 150 C BAS70JFILM Features and benefits
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n-channel Power MOSFET OptiMOS BSB017N03LX3 Data Sheet 2.2, 2011-05-27 Final Industrial & Multimarket 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy
AUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110
Features Advanced Planar Technology Low On-Resistance P-Channel MOSFET Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
TVS (Transient Voltage Suppressor) Bi-directional,. V,.8 pf, 2, RoHS and Halogen Free compliant Features ESD / transient protection according to: - IEC6-4-2 (ESD): ±8 kv (air), ± kv (contact discharge)
Part Ordering code Type Marking Remarks BAS85 BAS85-GS18 or BAS85-GS08 - Tape and Reel
Small Signal Schottky Diode Features For general purpose applications This diode features low turn-on voltage The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic
500mW High Speed SMD Switching Diode
5mW High Speed SMD Switching Diode FEATURES - Designed for mounting on small surface - Extremely thin/leadless package - High mounting capability, strong surage with stand, high reliability - Pb free and
PMEG6002EB; PMEG6002TV
Rev. 01 24 November 2006 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
IKW40T120. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Best in class TO247 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted
DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAS521 High voltage switching diode. Product specification 2003 Aug 12
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 2003 Aug 12 FEATURES High switching speed: max. 50 ns High continuous reverse voltage: 300 V Repetitive peak forward current: 625 ma Ultra small plastic SMD package.
PMEG3030EP. 1. Product profile. 3 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.
Rev. 0 9 December 2009 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress
TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC), 0.3 pf, 0201, RoHS and halogen free compliant
TVS (transient voltage suppressor) Bi-directional, 18 V (AC), 13 V (DC),.3 pf, 21, RoHS and halogen free compliant Feature list ESD/transient protection of high speed data lines according to: - IEC61-4-2
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic