Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback
|
|
- Hugo Gilbert
- 5 years ago
- Views:
Transcription
1 Smart igh-side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating oltage bb Active channels one four parallel On-state Resistance R ON 90mΩ 22.5mΩ Nominal load current (NOM) 3.3A 7.3A Current limitation (SCr) 12A 12A Package P-DSO-20 General Description N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SPMOS technology. Providing embedded protective functions Applications µc compatible high-side power switch with diagnostic feedback for 12 and 24 grounded loads All types of resistive, inductive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Functions ery low standby current CMOS compatible input mproved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range ogic ground independent from load ground Protection Functions Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor oss of ground and loss of bb protection Electrostatic discharge protection (ESD) Diagnostic Function Diagnostic feedback with open drain output Open load detection in OFF-state Feedback of thermal shutdown in ON-state Block Diagram 1 1/ /4 4 bb ogic Channel 1 Channel 2 ogic Channel 3 Channel 4 oad 1 oad 2 oad 3 oad 4 nfineon Technologies AG 1 of Oct-01
2 Functional diagram 1 overvoltage protection internal voltage supply ESD logic temperature sensor Open load detection gate control + charge pump current limit clamp for inductive load reverse battery protection BB OUT1 OAD. channel 1 1/2 2 1/2 control and protection circuit of channel 2 OUT2 3 3/4 control and protection circuit of channel 3 OUT3 4 3/4 control and protection circuit of channel 4 OUT4 nfineon Technologies AG 2 of Oct-01
3 Pin Definitions and Functions Pin Symbol Function 1,10, bb 11,12, 15,16, 19,20 thermal resistance OUT1 17 OUT2 14 OUT3 13 OUT4 Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low nput 1,2,3,4 activates channel 1,2,3,4 in case of logic high signal Output 1,2,3,4 protected high-side power output of channel 1,2,3,4. Design the wiring for the max. short circuit current 4 1/2 Diagnostic feedback 1/2,3/4 of channel 1,2,3,4 8 3/4 open drain, low on failure 2 1/2 Ground of chip 1 (channel 1,2) 6 3/4 Ground of chip 2 (channel 3,4) Pin configuration (top view) bb 1 20 bb 1/ bb OUT1 1/ OUT bb 3/ bb OUT3 3/ OUT bb bb bb nfineon Technologies AG 3 of Oct-01
4 Maximum Ratings at T j = 25 C unless otherwise specified Parameter Symbol alues Unit Supply voltage (overvoltage protection see page 6) bb 43 Supply voltage for full short circuit protection bb 36 T j,start = C oad current (Short-circuit current, see page 6) self-limited A oad dump protection 1) oaddump = A + s, A = 13.5 oad dump 3) 60 R 2) = 2 Ω, t d = 400 ms; = low or high, each channel loaded with R = 13.5 Ω, Operating temperature range Storage temperature range T j T stg C Power dissipation (DC) 4) T a = 25 C: P tot 3.6 W (all channels active) T a = 85 C: 1.9 Maximal switchable inductance, single pulse bb = 12, T j,start = 150 C 4), see diagrams on page 10 = 3.3 A, E AS = 120 mj, 0 Ω one channel: Z 16,5 m = 4.7 A, E AS = 140 mj, 0 Ω two parallel channels: 19 = 7.3 A, E AS = 160 mj, 0 Ω four parallel channels: 18 Electrostatic discharge capability (ESD) : ESD 1.0 k (uman Body Model) : 4.0 out to all other pins shorted: 8.0 acc. M-D883D, method and ESD assn. std. S R=1.5kΩ; C=100pF nput voltage (DC) see internal circuit diagram page Current through input pin (DC) Pulsed current through input pin 5) Current through status pin (DC) p ±0.3 ±5.0 ±5.0 ma 1) Supply voltages higher than bb(az) require an external current limit for the and status pins (a 150Ω resistor for the connection is recommended. 2) R = internal resistance of the load dump test pulse generator 3) oad dump is setup without the DUT connected to the generator per SO and D ) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for bb connection. PCB is vertical without blown air. See page 14 5) only for testing nfineon Technologies AG 4 of Oct-01
5 Thermal Characteristics BTS 724G Parameter and Conditions Symbol alues Unit min typ max Thermal resistance junction - soldering point 6)7) each channel: R thjs 15 K/W junction ambient 6 cm 2 cooling area Electrical Characteristics one channel active: all channels active: Parameter and Conditions, each of the four channels Symbol alues Unit at Tj = C, bb = 12 unless otherwise specified min typ max oad Switching Capabilities and Characteristics On-state resistance ( bb to OUT); = 2 A each channel, T j = 25 C: T j = 150 C: two parallel channels, T j = 25 C: four parallel channels, T j = 25 C: see diagram, page 11 Nominal load current one channel active: two parallel channels active: four parallel channels active: Device on PCB 6), Ta = 85 C, Tj 150 C Output current while disconnected or pulled up 8) ; bb = 32, = 0, see diagram page 9 Turn-on time 9) to 90% OUT : Turn-off time to 10% OUT : R = 12 Ω R thja R ON (NOM) mω (high) 2 ma Slew rate on 9) 10 to 30% OUT, R = 12 Ω: d/dt on /µs Slew rate off 9) 70 to 40% OUT, R = 12 Ω: -d/dt off /µs t on t off A µs 6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for bb connection. PCB is vertical without blown air. See page 14 7) Soldering point: upper side of solder edge of device pin 15. See page 14 8) not subject to production test, specified by design 9) See timing diagram on page 12. nfineon Technologies AG 5 of Oct-01
6 Parameter and Conditions, each of the four channels Symbol alues Unit at Tj = C, bb = 12 unless otherwise specified min typ max Operating Parameters Operating voltage bb(on) Undervoltage switch off 10) T j =-40 C...25 C: bb(u so) 4.5 T j =125 C: ) Overvoltage protection 12) bb = 40 ma bb(az) Standby current 13) T j =-40 C...25 C: bb(off) 9 20 = 0; see diagram page 11 T j =150 C: 30 µa T j =125 C: 20 11) Off-State output current (included in bb(off) ) = 0; each channel (off) 1 5 µa Operating current 14), = 5, = 1 + 2, one channel on: all channels on: Protection Functions 15) Current limit, out = 0, (see timing diagrams, page 12) Tj =-40 C: Tj =25 C: Tj =+150 C: Repetitive short circuit current limit, T j = T jt each channel two,three or four parallel channels (see timing diagrams, page 12) nitial short circuit shutdown time T j,start =25 C: out = 0 (see timing diagrams on page 12) (lim) 9 (SCr) ma 23 A t off(sc) 2 ms Output clamp (inductive load switch off) 16) ON(C) at ON(C) = bb - OUT, = 40 ma Thermal overload trip temperature T jt 150 C Thermal hysteresis T jt 10 K A 10) is the voltage, where the device doesn t change it s switching condition for 15ms after the supply voltage falling below the lower limit of bb(on) 11) not subject to production test, specified by design 12) Supply voltages higher than bb(az) require an external current limit for the and status pins (a 150Ω resistor for the connection is recommended). See also ON(C) in table of protection functions and circuit diagram on page 9. 13) Measured with load; for the whole device; all channels off 14) Add, if > 0 15) ntegrated protection functions are designed to prevent C destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 16) f channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest ON(C) nfineon Technologies AG 6 of Oct-01
7 Parameter and Conditions, each of the four channels Symbol alues Unit at Tj = C, bb = 12 unless otherwise specified min typ max Reverse Battery Reverse battery voltage 17) - bb 32 Drain-source diode voltage (out > bb) - ON 600 m = A, Tj = +150 C Diagnostic Characteristics Open load detection voltage OUT(O) nput and Status Feedback 18) nput resistance R kω (see circuit page 9) nput turn-on threshold voltage (T+) 2.5 nput turn-off threshold voltage (T-) 1.0 nput threshold hysteresis (T) 0.2 Status change after positive input slope 19) t d(on) µs with open load Status change after positive input slope 19) t d(on) 30 µs with overload Status change after negative input slope t d(off) 500 µs with open load Status change after negative input slope 19) with overtemperature t d(off) 20 µs Off state input current = 0.4 : (off) 5 20 µa On state input current = 5 : (on) µa Status output (open drain) Zener limit voltage = +1.6 ma: (high) 5.4 low voltage = +1.6 ma: (low) ) Requires a 150 Ω resistor in connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! nput and Status currents have to be limited (see max. ratings page 4 and circuit page 9). 18) f ground resistors R are used, add the voltage drop across these resistors. 19) not subject to production test, specified by design nfineon Technologies AG 7 of Oct-01
8 Truth Table Channel 1 and 2 Chip OUT1 OUT2 1/2 Channel 3 and 4 Chip OUT3 OUT4 3/4 (equivalent to channel 1 and 2) Normal operation 20) 15) Open load Channel 1 (3) Channel 2 (4) Overtemperature both channel Channel 1 (3) Channel 2 (4) = "ow" evel = don't care Z = high impedance, potential depends on external circuit = "igh" evel Status signal valid after the time delay shown in the timing diagrams Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). f switching channel 1 to 4 in parallel, the status outputs 1/2 and 3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor. Z Z Terms bb bb 1 2 1/ / eadframe bb 1 OUT1 2 PROFET Chip 1 OUT2 1/2 1/ ON1 ON2 1 2 OUT / / eadframe bb 3 OUT3 4 PROFET Chip 2 OUT4 3/4 3/ ON3 ON4 3 4 OUT3 1/2 OUT2 3/4 OUT4 R 1/2 R 3/4 eadframe ( bb ) is connected to pin 1,10,11,12,15,16,19,20 External R optional; two resistors R 1, R 2 = 150 Ω or a single resistor R = 75 Ω for reverse battery protection up to the max. operating voltage. 20), if potential at the Output exceeds the Openoad detection voltage nfineon Technologies AG 8 of Oct-01
9 nput circuit (ESD protection), 1 to 4 R ESD-ZD Overvolt. and reverse batt. protection + 5 R R R ogic Z2 OUT + bb Z1 The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Status output, 1/2 or 3/4 R (ON) +5 R Signal R oad oad Z1 = 6.1 typ., Z2 = 47 typ., R = 150 Ω, R = 15 kω, R = 3.5 kω typ. n case of reverse battery the load current has to be limited by the load. Temperature protection is not active ESD- ZD ESD-Zener diode: 6.1 typ., max 0.3 ma; R (ON) < 375 Ω at 1.6 ma. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Open-load detection, OUT1...4 OFF-state diagnostic condition: Open oad, if OUT > 3 typ.; low bb nductive and overvoltage output clamp, OUT bb OFF R ET OUT Z ogic unit Open load detection ON OUT Signal disconnect ON clamped to ON(C) = 47 typ. Power bb PROFET OUT bb Any kind of load. n case of = high is OUT - (T+). Due to > 0, no = low signal available. nfineon Technologies AG 9 of Oct-01
10 disconnect with pull up nductive load switch-off energy dissipation E bb bb E AS bb PROFET OUT = bb PROFET OUT Z { E oad E Any kind of load. f > - (T+) device stays off Due to > 0, no = low signal available. bb disconnect with energized inductive load Energy stored in load inductance: E = 1 /2 2 While demagnetizing load inductance, the energy dissipated in PROFET is R E R high bb E AS = E bb + E - E R = ON(C) i (t) dt, with an approximate solution for R > 0 Ω: bb PROFET OUT E AS = R ( 2 R bb + OUT(C) ) ln (1+ OUT(C) ) Maximum allowable load inductance for a single switch off (one channel) 4) = f ( ); T j,start = 150 C, bb = 12, R = 0 Ω For inductive load currents up to the limits defined by Z (max. ratings and diagram on page 10) each switch is protected against loss of bb. Consider at your PCB layout that in the case of bb disconnection with energized inductive load all the load current flows through the connection. Z [m] [A] nfineon Technologies AG 10 of Oct-01
11 Typ. on-state resistance R ON = f ( bb,t j ); = 2 A, = high R ON [mohm] 160 Tj = 150 C C -40 C bb [] Typ. standby current bb(off) = f (T j ); bb = , 1,2,3,4 = low bb(off) [µa] T j [ C] nfineon Technologies AG 11 of Oct-01
12 Timing diagrams All channels are symmetric and consequently the diagrams are valid for channel 1 to channel 4 BTS 724G Figure 1a: bb turn on: 1 2 Figure 2b: Switching a lamp: bb OUT1 OUT OUT2 1 open drain 2 open drain t t Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition: Figure 3a: Turn on into short circuit: shut down by overtemperature, restart by cooling 1 other channel: normal operation OUT 90% t on d/dtoff 1 (lim) 10% d/dton t off (SCr) t off(sc) t eating up of the chip may require several milliseconds, depending on external conditions t nfineon Technologies AG 12 of Oct-01
13 Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) 1/2 Figure 5a: Open load: detection in OFF-state, turn on/off to open load Open load of channel 1; other channels normal operation x (lim) OUT1 (SCr) 1 1/2 t off(sc) 10µs 500µs t 1 and 2 have to be configured as a 'Wired OR' function 1/2 with a single pull-up resistor. Figure 4a: Overtemperature: Reset if T j <T jt Figure 6a: Status change after, turn on/off to overtemperature Overtemperature of channel 1; other channels normal operation 1 30µs 20µs OUT T J t nfineon Technologies AG 13 of Oct-01
14 Package and Ordering Code Standard: P-DSO Sales Code BTS 724G Ordering Code Q67060-S7026 All dimensions in millimetres Published by nfineon Technologies AG, St.-Martin-Strasse 53, D München nfineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. nfineon Technologies is an approved CECC manufacturer. nformation For further information on technology, delivery terms and conditions and prices please contact your nearest nfineon Technologies Office in Germany or our nfineon Technologies Representatives worldwide (see address list). Definition of soldering point with temperature T s : upper side of solder edge of device pin 15. Pin 15 Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm 2 active heatsink area) as a reference for max. power dissipation P tot, nominal load current (NOM) and thermal resistance R thja Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest nfineon Technologies Office. nfineon Technologies Components may only be used in life-support devices or systems with the express written approval of nfineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. ife support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. f they fail, it is reasonable to assume that the health of the user or other persons may be endangered. nfineon Technologies AG 14 of Oct-01
15 This datasheet has been download from: Datasheets for electronics components.
Smart Power High-Side-Switch
Smart Power ighsideswitch Features Product Summary Overload protection Overvoltage protection bb(az) 6 Current limitation Operating voltage bb(on) 6...5 Short circuit protection Onstate resistance R ON
More informationSmart High-Side Power Switch BTS716GB
Smart igh-side Power Switch Ω Product Summary Package Ω Ω P-DSO-20 PG-DSO20 Block Diagram Data Sheet 1 V1.0, 2007-05-13 Smart igh-side Power Switch IN4 control and protection circuit of channel 2 control
More informationSmart Highside Power Switch One Channel: 20m Status Feedback
Smart Power igh-side-switch One Channel: 20 mω BTS441R Smart ighside Power Switch One Channel: 20m Status Feedback Product Summary On-state Resistance RON 20mΩ Operating Voltage Vbb(on) 4.75... 41V Nominal
More informationBTS441TG. Data sheet. Automotive Power. Smart Power High-Side-Switch One Channel 20 mω. Rev. 1.21,
Smart Power High-Side-Switch One Channel 20 mω Data sheet Rev. 1.21, 2012-12-06 Automotive Power Smart Power High-Side-Switch One Channel: 20 mω BTS441TG 1 Overview General Description N channel vertical
More informationSmart High-Side Power Switch
Smart igh-side Power Switch Smart igh-side Power Switch PROFET Data Sheet Rev 1.3, 2010-03-16 Automotive Power Smart igh-side Power Switch Smart Four Channel ighside Power Switch Features Overload protection
More informationSmart Highside Power Switch
PROFET Data sheet BTS 6144B/P Smart ighside Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Features Short circuit protection with latch Current limitation Overload protection
More informationSmart High-Side Power Switch
Smart igh-side Power Switch Smart igh-side Power Switch PROFET BTS7211 Data Sheet Rev. 1.3, 2010-03-16 Automotive Power Smart igh-side Power Switch BTS7211 Smart Four Channel ighside Power Switch Features
More informationSmart High-Side Power Switch BTS5210L
Ω Product Summary Package Ω Ω P-DSO-12 PG-DSO-12-9 Block Diagram AEC qualified Green product (RoHS compliant) Data Sheet 1 V1.1, 2007-05-29 control and protection circuit equivalent to channel 1 Data Sheet
More informationSmart Highside High Current Power Switch
Data Sheet BTS651 Smart Highside High Current Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Features Overload protection Current limitation Short circuit protection
More informationSmart High-Side Power Switch One Channel: 1 x 1Ω
BTS 44 N Smart HighSide Power Switch One Channel: x Ω Features Current controlled input Product Summary Overvoltage protection bbin(az) 6 Short circuit protection Operating voltage bb(on) 4.9...6 Current
More informationSmart Highside Power Switch
Smart ighside Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Features Short circuit protection with latch Current limitation Overload protection Thermal shutdown with
More informationSmart High-Side Power Switch BTS740S2
Ω Ω Ω P-DSO-2-9 PG-DSO2 Data Sheet 1 V1., 27-5-13 Pin Definitions and Functions Control and protection circuit of channel 2 Channel 1 PROFET Pin configuration Pin Symbol Function 1,1, 11,12, 15,16, 19,2
More informationPROFET Data Sheet BTS550P Smart Highside High Current Power Switch
Data Sheet BTS55P Smart Highside High Current Power Switch Reverse Save Reverse battery protection by self turn on of power MOSFET Features Overload protection Current limitation Short circuit protection
More informationMini PROFET BSP 452 BSP 452
MiniPROFET High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load Clamp of negative output
More informationLOGIC. Smart Quad Channel Low-Side Switch. Datasheet TLE 6228 GP. Output Stage. Gate Control
Smart Quad Channel ow-side Switch Features Product Summary Shorted Circuit Protection Overtemperature Protection Overvoltage Protection Parallel Control of the Inputs (PWM Applications) Seperate Diagnostic
More informationType Ordering Code Package BTS 7741 G Q67007-A9554 P-DSO-28-14
TrilithIC BTS 774 G Data Sheet Overview. Features Quad D-MOS switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications ow R DS ON : mω high-side switch, mω
More informationSmart Sense High-Side Power Switch
Smart Sense High-Side Power Switch Features Short circuit protection Current limitation Proportional load current sense CMOS compatible input Open drain diagnostic output Fast demagnetization of inductive
More informationLOGIC. Datasheet TLE Smart Quad Channel Low-Side Switch
Smart Quad Channel ow-side Switch Features Product Summary ow ON-resistance 2 x 0.2, 2 x 0.35 (typ.) Power - SO 20 - Package with integrated cooling area Overload shutdown Selective thermal shutdown Status
More informationSmart Low Side Power Switch
Smart Low Side Power Switch HITFET BTS3408G Datasheet Rev. 1.4 Features Logic level input Compatible to 3V micro controllers ESD protection Thermal shutdown with auto restart Overload protection Short
More informationHITFET BTS3800SL. Datasheet. Automotive. Smart Low Side Power Switch. Small Protected Automotive Relay Driver Single Channel, 800mΩ
HITFET Smart Low Side Power Switch BTS3800SL Small Protected Automotive Relay Driver Single Channel, 800mΩ Datasheet Rev. 1.1, 2011-04-30 Automotive 1 Overview.......................................................................
More informationType Ordering Code Package BTS 7700 G Q67007-A9375 P-DSO-28-14
TrilithIC BTS 7700 G Data Sheet Overview. Features Quad D-MOS switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications ow R DS ON : 0 mω high-side switch,
More informationType Ordering Code Package BTS 7810 K Q67060-S6129 P-TO
TrilithIC BTS 78 K Data Sheet Overview. Features Quad D-MOS switch Free configurable as bridge or quad-switch Optimized for DC motor management applications ow R DS ON : 26 mω high-side switch, 4 mω low-side
More information5-V Low-Drop Voltage Regulator TLE Bipolar IC
5- Low-Drop oltage Regulator TLE 4267 Bipolar IC Features Output voltage tolerance ± 2 % 4 ma output current capability Low-drop voltage ery low standby current consumption Input voltage up to 4 Overvoltage
More informationType Ordering Code Package BTS 7750 GP Q67006-A9402 P-TO
TrilithIC BTS 7750 GP Data Sheet Overview. Features Quad D-MOS switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications ow R DS ON : 70 mτ high-side switch,
More informationData Sheet, Rev. 1.0, May 2008 BTM7810K. TrilithIC. Automotive Power
Data Sheet, Rev.., May 28 BTM78K TrilithIC Automotive Power BTM78K Table of Contents Table of Contents................................................................ 2 Overview.......................................................................
More informationIGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
More informationTriple Voltage Regulator TLE 4471
Triple Voltage Regulator TLE 4471 Features Triple Voltage Regulator Output Voltage 5 V with 450 ma Current Capability Two tracked Outputs for 50 ma and 100 ma Enable Function for main and tracked Output(s)
More informationLOGIC. Smart Quad Channel Low-Side Switch. Datasheet TLE 6228 GP
Smart Quad Channel Low-Side Switch Features Product Summary Shorted Circuit Protection Overtemperature Protection Overvoltage Protection Parallel Control of the Inputs (PWM Applications) Seperate Diagnostic
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.6, 2014-01-10 Final Industrial & Multimarket 1 Description OptiMOS 100V products are class leading power MOSFETs for highest power density and energy efficient
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.5, 2011-09-16 Final Industrial & Multimarket 1 Description OptiMOS 150V products are class leading power MOSFETs for highest power density and energy efficient
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 1.4, 2011-03-01 Preliminary Industrial & Multimarket 1 Description OptiMOS 60V products are class leading power MOSFETs for highest power density and energy efficient
More informationLOGIC. Smart Octal Low-Side Switch. Datasheet TLE 6236 G. Output Stage. Output Control Buffer OL/PRG. Serial Interface SPI
Smart Octal Low-Side Switch Features Product Summary Short Circuit Protection Overtemperature Protection Overvoltage Protection 8 bit Serial Data Input and Diagnostic Output (acc. SPI protocol) Direct
More informationVNI2140. Dual high side smart power solid state relay. Description. Features
Dual high side smart power solid state relay Description Datasheet - production data Features PowerSSO-12 Nominal current: 0.5 A per channel Shorted-load protections Junction overtemperature protection
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.1, 2011-09-08 Final Industrial & Multimarket 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient
More informationThermal behavior of the new high-current PROFET
BTS7002-1EPP, BTS7004-1EPP, BTS7006-1EPP, BTS7008-1EPP, BTS7008-2EPA High-current PROFET 12V smart high side power switch, BTS700x Family About this document Scope and purpose This document shows how to
More informationOptiMOS 2 Power-Transistor
IPI9N3LA, IPP9N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS BSB017N03LX3 Data Sheet 2.2, 2011-05-27 Final Industrial & Multimarket 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy
More informationLOGIC. Smart Octal Low-Side Switch. Data Sheet TLE 6230 GP. Supply voltage V S V Features
Smart Octal Low-Side Switch Supply voltage V S 4.5 5.5 V Features Drain source clamping voltage V DS(AZ)max 55 V Product Summary On resistance R ON 0.75 Ω Short Circuit Protection Output current (all outp.on
More informationVND05B / VND05B (011Y) / VND05B (012Y) DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY
VND05B / VND05B (0Y) / VND05B (02Y) DOUBE CANNE IG SIDE SMART POWER SOID STATE REAY TYPE V DSS R DS(on) I n (*) V CC VND05B VND05B (0Y) VND05B (02Y) 40V 200mΩ.6A 26 V OUTPUT CURRENT (CONTINUOUS): 9A AT
More informationVN06SP HIGH SIDE SMART POWER SOLID STATE RELAY
VN06SP HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VDSS RDS(on) In(*) VCC VN06SP 60 V 0.18 Ω 1.9 A 26 V MAXIMUM CONTINUOUS OUTPUT CURRENT (#):9 A @ T c=85 o C 5 V LOGIC LEVEL COMPATIBLE INPUT THERMAL
More informationSupply voltage V S V Overtemperature
Smart Octal Low-Side Switch Features Product Summary Protection Overload, short circuit Supply voltage V S 4.5 5.5 V Overtemperature Drain source clamping voltage V DS(AZ)max 60 V Overvoltage On resistance
More informationTLS202A1. Data Sheet. Automotive Power. Adjustable Linear Voltage Post Regulator TLS202A1MBV. Rev. 1.0,
Adjustable Linear Voltage Post Regulator TLS22A1MBV Data Sheet Rev. 1., 215-6-22 Automotive Power Adjustable Linear Voltage Post Regulator TLS22A1MBV 1 Overview Features Adjustable Output Voltage from
More informationVNP10N06 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS(on) I lim VNP10N06 60 V 0.3 Ω 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN
More informationBSP752R. Features. Applications. Smart High-Side Power Switch
Features Overload protection Current limitation Short circuit protection Thermal shutdown with restart Overvoltage protection (including load dump) Fast demagnetization of inductive loads Reverse battery
More informationDouble channel high-side driver with analog current sense for 24 V automotive applications. Application. Description
Double channel high-side driver with analog current sense for 24 V automotive applications Datasheet - production data Self limiting of fast thermal transients Protection against loss of ground and loss
More informationHITFETs: Smart, Protected MOSFETs Application Note
: Smart, Protected MOSFETs Application Note Automotive Power HITFETS Table of Contents Page 1 Abstract...3 2 Introduction...3 3 Functional Description. Portfolio Overview....3 4 Circuit fault. Operation
More informationStep down - LED controller IC for external power stages ILD4001
Target Datasheet, Rev. 1.0, July 2009 Step down - LED controller IC for external power stages ILD4001 Small Signal Discretes Edition 2009-07-06 Published by Infineon Technologies AG, 81726 München, Germany
More informationVN751PTTR. High-side driver. Description. Features
High-side driver Datasheet - production data Description Features 8 V to 36 V supply voltage range Up to I OUT = 2.5 A operating current R DS(on) : 60 m CMOS compatible input Thermal shutdown Shorted load
More informationMOSFET. CoolMOS CP. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor Data Sheet Rev. 2.1, 2012-01-10 Final Industrial & Multimarket 1 Description The CoolMOS CP series offers
More informationPower Charge Pump and Low Drop Voltage Regulator TLE 4307
Power Charge Pump and Low Drop Voltage Regulator TLE 4307 Power Charge Pump Circuit Features High Current Capability Short Circuit Protection Overtemperature Protection Active Zener Circuit Very Low Drop
More informationVN540-E/VN540SP-E. Single high-side smart power solid state relay. Description. Features
VN540E/VN540SPE Single highside smart power solid state relay Datasheet production data Protection against: oss of ground Shorted load and overtemperature Builtin current limiter Undervoltage shutdown
More informationMOSFET. CoolMOS C6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor Data Sheet Rev. 2.0, 2009-09-25 Final Industrial & Multimarket IPA60R125C6, IPB60R125C6 IPP60R125C6
More informationVNP35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP35N07 70 V 0.028 Ω 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
More informationVNP49N04FI / VNB49N04 / VNV49N04
VNP49N04FI / VNB49N04 / VNV49N04 OMNIFET : FULLY AUTOPROTECTED POWER MOSFET TYPE V CLAMP R DS(ON) I LIM VNP49N04FI VNB49N04 VNV49N04 42 V 20 mω 49 A n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT
More informationTOPFET high side switch
DESCRIPTION QUICK REFERENCE DATA Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT protected power switch in TOPFET2 technology assembled in I L Nominal load current (ISO) 2 A a 5 pin plastic
More informationMOTOROLA. Automotive Dual High Side Driver MC Advance Information. Freescale Semiconductor, I. Semiconductor Technical Data MC33286 MCU
MOTOROA Semiconductor Technical Data nc. Order Number: /D Rev. 5.4, 6/21 Advance Information Automotive Dual igh Side Driver This device is a dual high side power switch dedicated for automoive applications.
More informationData Sheet, Rev. 2.2, April 2008 BGA622L7. Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection. Small Signal Discretes
Data Sheet, Rev. 2.2, April 2008 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection Small Signal Discretes Edition 2008-04-14 Published by Infineon Technologies AG, 81726
More informationTOPFET high side switch SMD version
DESCRIPTION QUICK REFERENCE DATA Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT protected power switch in TOPFET2 technology assembled in I L Nominal load current (ISO) 18 A a 5 pin plastic
More informationSmart Multichannel Switches
Application Note, V1.2, August 2005 Smart Multichannel Switches Technical considerations for parallel channel operation applications Automotive Power by Bernard Wang Never stop thinking. Edition 2005-08
More informationMetal Oxide Semiconductor Field Effect Transistor. 600V CoolMOS E6 Power Transistor IPx60R600E6. Rev. 2.0, Final
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket IPD60R600E6, IPP60R600E6 IPA60R600E6
More informationMOSFET. CoolMOS E6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket IPA65R190E6, IPB65R190E6 IPI65R190E6,
More informationOPTIREG Linear TLE4262
Features Output voltage tolerance ±2% 2 ma output capability Low-drop voltage ery low standby current consumption Overtemperature protection Reverse polarity protection Short-circuit proof Adjustable reset
More informationDual Low Drop Voltage Regulator TLE 4476
Dual Low Drop oltage Regulator TLE 4476 Features Output 1: 350 ma; 3.3 ± 4% Output 2: 430 ma; 5.0 ± 4% Enable input for output 2 Low quiescent current in OFF state Wide operation range: up to 42 Reverse
More informationVND5N07-1-E. OMNIFET II fully autoprotected Power MOSFET. Description. Features
OMNIFET II fully autoprotected Power MOSFET Description Datasheet - production data Features 1 DPAK TO-252 3 IPAK TO-251 3 2 1 Max. on-state resistance (per ch.) R DS (on) 0.2Ω Current limitation (typ)
More informationClassic PROFET and Mini PROFET Leading the Way in Energy Robustness
Classic PROFET and Mini PROFET Leading the Way in Energy Robustness [ www.infineon.com/profet ] Introduction The well-established high-side switch families Classic PROFET and Mini PROFET were designed
More informationVNP28N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP28N04 42 V 0.035 Ω 28 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
More informationVPS2535H. Double channel high-side driver with analog current sense. Application. Features. Description
VPS2535 Double channel high-side driver with analog current sense Datasheet production data Protection against loss of ground and loss of V CC Thermal shutdown Electrostatic discharge protection Features
More informationMOSFET. CoolMOS C6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket IPA60R099C6, IPB60R099C6 IPP60R099C6
More informationData Sheet, Rev. 2.1, Sept BGA612. Silicon Germanium Broadband MMIC Amplifier. RF & Protection Devices
Data Sheet, Rev..1, Sept. 11 BGA61 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 11-9- Published by Infineon Technologies AG, 176 München, Germany Infineon Technologies AG
More informationVNN7NV04P-E, VNS7NV04P-E
OMNIFET II fully autoprotected Power MOSFET Features Type R DS(on) I lim V clamp 2 VNN7NV04P-E VNS7NV04P-E 60 mω 6A 40V 2 3 SOT-223 SO-8 Linear current limitation Thermal shutdown Short circuit protection
More informationVNB14NV04 / VND14NV04 / VND14NV04-1/ VNP14NV04/ VNS14NV04
VNB4NV4 / VND4NV4 / VND4NV4-/ VNP4NV4/ VNS4NV4 OMNIFET II : FULLY AUTOPROTECTED POWER MOSFET TYPE R DS(on) I lim V clamp VNB4NV4 VND4NV4 VND4NV4- VNP4NV4 VNS4NV4 35 mω A 4 V 3 TO-5 (DPAK) SO-8 LINEAR CURRENT
More informationBAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package
Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package BAT68 BAT68- BAT68-W BAT68-6 BAT68-6W BAT68-7W BAT68-8S!!! "!
More informationn/a VNP7N04 7A POWER MOSFET TO-220 (RC)
DATA SHEET Bridge rectifier Diodes Order code Manufacturer code Description 47-0404 n/a VNP7N04 7A POWER MOSFET TO-220 (RC) Bridge rectifier Diodes The enclosed information is believed to be correct, Information
More informationCoolSET TM Selection Guide
CoolSET - New Type Numbering System Z Z CoolSET TM F2 Second generation off-line SMPS current mode controller with integrated CoolMOS power transistor as well as enhanced Protection Features and Lowest
More informationFPF2495 IntelliMAX 28 V Over-Voltage, Over-Current Protection Load Switch with Adjustable Current-Limit Control
November 2013 FPF2495 IntelliMAX 28 V, Over-Voltage, Over-Current Protection Load Switch with Adjustable Current-Limit Control Features V IN : 2.5 V~5.5 V 28 V Absolute Ratings at Current Capability: 1.5
More informationReplacement of HITFET devices
Application Note Replacement of HITFET devices About this document Scope and purpose This document is intended to give a proposal on how to replace HITFET devices with the newest HITFET+ BTS3xxxEJ family.
More informationObsolete Product(s) - Obsolete Product(s)
ISO high side smart power solid state relay Features Type V DSS R DS(on) I n (1) V CC 60 V 0.18 Ω 1.9 A 26 V 1. In= nominal current according to ISO definition for high side automotive switch. Maximum
More informationBFG235. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma 4 3 Power amplifiers for DECT
More informationMetall Oxide Semiconductor Field Effect Transistor. 650V CoolMOS TM E6 Power Transistor IPx65R600E6. Rev. 2.2,
MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS TM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.2, 2016-08-04 Power Management & Multimarket 1 Description CoolMOS
More informationData sheet, BGA614, Nov BGA614. Silicon Germanium Broadband MMIC Amplifier MMIC. Secure Mobile Solutions Silicon Discretes. Never stop thinking.
Data sheet, BGA61, Nov. 3 BGA61 Silicon Germanium Broadband MMIC Amplifier MMIC Secure Mobile Solutions Silicon Discretes Never stop thinking. Edition 311 Published by Infineon Technologies AG, St.MartinStrasse
More informationVNH50N04 OMNIFET : FULLY AUTOPROTECTED POWER MOSFET
OMNIFET : FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) I lim VNH50N04 40 V 0.012 Ω 50 A TARGET DATA LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT
More informationVN750SM-E HIGH SIDE DRIVER. Table 1. General Features. Figure 1. Package
IG SIDE DRIVER Table 1. General Features Figure 1. Package Type R DS(on) I OUT V CC VN750SM-E 55 mω 6 A 36 V CMOS COMPATIBE ON STATE OPEN OAD DETECTION OFF STATE OPEN OAD DETECTION SORTED OAD PROTECTION
More informationIPS5751/IPS5751S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Data Sheet No.PD6197 IPS5751/IPS5751S FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Over current shutdown Active clamp E.S.D protection Status feedback
More information5-A H-Bridge for DC-Motor Applications TLE
5-A H-Bridge for DC-Motor Applications TE 525-2 Overview. Features Delivers up to 5 A continuous 6 A peak current Optimized for DC motor management applications Operates at supply voltages up to 4 V Very
More information1200mA step down - LED controller IC ILD4120
Target Datasheet, Rev. 1.0, July 2009 ILD4120 Small Signal Discretes Edition 2009-07-06 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved.
More informationData Sheet, V 1.1, Oct TLE4906H TLE4906L. High Precision Hall-Effect Switch. Sensors
Data Sheet, V 1.1, Oct. 2005 TLE4906H High Precision Hall-Effect Switch Sensors Edition 2005-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies
More informationIPS161HTR. Single high-side switch. Description. Features. Applications
Single high-side switch Description Datasheet - production data Features PowerSSO12 R DS(on) = 0.060 Ω, I OUT = 0.7 A, V CC = 65 V 8 V to 60 V operating voltage range Minimum output current limitation:
More informationVNP10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP10N07 70 V 0.1 Ω 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
More informationPower Management & Supply. Design Note. Version 2.3, August 2002 DN-EVALSF2-ICE2B765P-1. CoolSET 80W 24V Design Note for Adapter using ICE2B765P
Version 2.3, August 2002 Design Note DN-EVALSF2-ICE2B765P-1 CoolSET 80W 24V Design Note for Adapter using ICE2B765P Author: Rainer Kling Published by Infineon Technologies AG http://www.infineon.com/coolset
More informationVND10BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY
ISO IG SIDE SMART POWER SOID STATE REAY TYPE VDSS RDS(on) IOUT VCC VND10BSP 40 V 0.1 Ω 3.4 A 26 V OUTPUT CURRENT (CONTINUOUS): 14A @ T c =85 PER CANNE 5V OGIC EVE COMPATIBE INPUT TERMA SUT-DOWN UNDER VOTAGE
More informationTracking Regulator TLE 4252
Tracking Regulator TLE 4252 Features Output tracking tolerance to reference ±0.2% Output voltage adjust down to 1.5 V 250 ma output current capability Enable function Very low current consumption in OFF
More informationTLE Data Sheet. Automotive Power. Low Drop Voltage Regulator TLE4296-2GV33 TLE4296-2GV50. Rev. 1.13,
Low Drop Voltage Regulator TLE4296-2GV33 TLE4296-2GV50 Data Sheet Rev. 1.13, 2014-03-18 Automotive Power Low Drop Voltage Regulator TLE4296-2GV33 TLE4296-2GV50 1 Overview Features Two versions: 3.3 V,
More informationSmart High-Side Power Switch BTS4140N
Ω Ω 4 2 1 PG-SOT-223 AEC qualified Green product (RoHS compliant) 3 VPS05163 General Description N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated
More informationObsolete Product(s) - Obsolete Product(s)
VNSNV4D OMNIFET II : FULLY AUTOPROTECTED POWER MOSFET TYPE R DS(on) I lim V clamp VNSNV4D 5 mω (*).7 A (*) 4 V (*) (*) Per each device n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION
More informationCoreControl TM Data Sheet TDA21106
High speed Driver with bootstrapping for dual Power MOSFETs Features P-DSO-8 Fast rise and fall times for frequencies up to 2 MHz Capable of sinking more than 4A peak currents for lowest switching losses
More informationBTS3256D. 1 Overview. Smart Low Side Power Switch
Smart Low Side Power Switch 1 Overview Features Slew rate control by dedicated pin enabling EMC optimized switching or PWM operation Max. switching Frequency 12 khz Clear detection of digital fault signal
More informationObsolete Product(s) - Obsolete Product(s)
VNSNVD OMNIFET II : FULLY AUTOPROTECTED POWER MOSFET TYPE R DS(on) I lim V clamp VNSNVD mω (*).5 A (*) V (*) (*)Per each device n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION
More informationZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication
60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage On-state resistance V DS = 60V 500m Nominal load current (V IN = 5V) 1.4A
More informationIPS5451/IPS5451S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH. Load
Data Sheet No.PD6159-K FUY PROTECTED IG SIDE POWER MOSFET SWITC Features Over temperature protection (with auto-restart) Over current shutdown Active clamp E.S.D protection Status feedback Open load detection
More informationDOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY. PowerSO-10 VND830ASP VND830ASP13TR OVERVOLTAGE UNDERVOLTAGE DRIVER 1. V dslim1 I OUT1 DRIVER 2
DOUBE CANNE IG SIDE SOID STATE REAY TYPE R DS(on) I OUT CC 6 mω (*) 6 A (*) 36 (*) (*) Per channel DC SORT CIRCUIT CURRENT: 6A CMOS COMPATIBE INPUTS PROPORTIONA OAD CURRENT SENSE UNDEROTAGE AND OEROTAGE
More information