Smart Power High-Side-Switch

Transcription

1 Smart Power ighsideswitch Features Product Summary Overload protection Overvoltage protection bb(az) 6 Current limitation Operating voltage bb(on) Short circuit protection Onstate resistance R ON mω Thermal shutdown with restart Nominal load current (nom) 1.3 A Overvoltage protection (including load dump) Fast demagnetization of inductive loads Reverse battery protection with external resistor Open drain diagnostic output for overtemperature and short circuit Open load detection in OFF State with external resistor CMOS compatible input oss of and loss of bb protection ESD Protection ery low standby current Application All types of resistive, inductive and capacitive loads µc compatible power switch for 1, 4 and 4 DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SPMOS technology. Providing embedded protective functions. Page 1 417

2 Block Diagram + bb oltage source Overvoltage protection Current limit Gate protection ogic ESD ogic Charge pump evel shifter Rectifier imit for unclamped ind. loads Temperature sensor oad miniprofet Signal oad Pin Symbol Function 1 ogic ground nput, activates the power switch in case of logic high signal 3 Output to the load 4 Diagnostic feedback 5 bb Positive power supply voltage 6 bb Positive power supply voltage 7 bb Positive power supply voltage 8 bb Positive power supply voltage Pin configuration Top view 1 8 bb 7 bb 3 6 bb 4 5 bb Page 417

3 Maximum Ratings at Tj = 5 C, unless otherwise specified Parameter Symbol alue Unit Supply voltage bb 5 Supply voltage for full short circuit protection bb(sc) 5 Continuous input voltage oad current (Short circuit current, see page 5) self limited A Current through input pin (DC) ± 5 ma Operating temperature C Storage temperature T stg Power dissipation 1) P tot 1.5 W nductive load switchoff energy dissipation 1)) single pulse, (see page 9 ) Tj =15 C, = 1 A oad dump protection ) oaddump 3)= A + S R =Ω, t d =4ms, = low or high, A =13,5 R = 13.5 Ω R = 7 Ω Electrostatic discharge voltage (uman Body Model) according to ANS EOS/ESD S ESD M nput pin all other pins E AS 15 mj oaddump ESD Thermal Characteristics Thermal min. footprint R th(ja) 95 K/W Thermal 6 cm cooling area 1) R th(ja) 7 83 ± 1 ± 5 k 1 Device on 5mm*5mm*1.5mm epoxy PCB FR4 with 6 cm (one layer, 7µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 17) not subject to production test, specified by design 3 oaddump is setup without the DUT connected to the generator per SO and D Supply voltages higher than bb(az) require an external current limit for the pin, e.g. with a 15Ω resistor in connection. A resistor for the protection of the input is integrated. Page 3 417

4 Electrical Characteristics Parameter and Conditions Symbol alues Unit at = C, bb = 1..4, unless otherwise specified min. typ. max. oad Switching Capabilities and Characteristics Onstate resistance = 5 C, = 1 A, bb = = 15 C Nominal load current; Device on PCB 1) T C = 85 C, 15 C Turnon time to 9% R = 47 Ω Turnoff time to 1% R = 47 Ω Slew rate on 1 to 3%, R = 47 Ω, bb = 13.5 Slew rate off 7 to 4%, R = 47 Ω, bb = 13.5 R ON mω (nom) A t on 8 18 µs t off 8 d/dt on.7 /µs d/dt off.9 Operating Parameters Operating voltage bb(on) 6 5 Undervoltage shutdown of charge pump = C = 15 C bb(under) Undervoltage restart of charge pump bb(u cp) Standby current = C, = low = +15 C ), = low eakage output current (included in bb(off) ) = low Operating current = high bb(off) µa (off) 5.8 ma 1 Device on 5mm*5mm*1.5mm epoxy PCB FR4 with 6 cm (one layer, 7µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 17) higher current due temperature sensor Page 4 417

5 Electrical Characteristics Parameter and Conditions Symbol alues Unit at = C, bb = 1..4, unless otherwise specified min. typ. max. Protection Functions 1) nitial peak short circuit current limit (pin 5 to 3) = 4 C, bb =, t m = 15 µs = 5 C = 15 C = C, bb > 4, ( see page 1 ) Repetitive short circuit current limit = t (see timing diagrams) bb < 4 bb > 4 Output clamp (inductive load switch off) at = bb ON(C), bb = 4 ma Overvoltage protection 3) bb = 4 ma (SCp) (SCr) 4 A ) ON(C) bb(az) 6 Thermal overload trip temperature t 15 C Thermal hysteresis t 1 K Reverse Battery Reverse battery 4) bb 5 Drainsource diode voltage ( > bb ) = 15 C ON 6 m 1 ntegrated protection functions are designed to prevent C destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. not subject to production test, specified by design 3 see also ON(C) in circuit diagram on page 8 4Requires a 15 Ω resistor in connection. The reverse load current through the intrinsic drainsource diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drainsource diode. The temperature protection is not active during reverse current operation! nput current has to be limited (see max. ratings page 3). Page 5 417

6 Electrical Characteristics Parameter Symbol alues Unit at = C, bb = 1..4, unless otherwise specified min. typ. max. nput and Status feedback nput turnon threshold voltage (T+). nput turnoff threshold voltage (T).8 nput threshold hysteresis (T).4 Off state input current (off) 1 5 µa =.7 On state input current (on) 3 5 = 5 Status output (open drain), Zener limit voltage = 1.6 ma (high) Status output (open drain), low voltage = C, = 1.6 ma = 15 C, = 1.6 ma Status invalid after positive input slope 1) bb = (low).4.6 t d(+) 1 16 µs Status invalid after negative input slope 1) t d() 5 4 nput resistance (see page 8) R kω Diagnostic Characteristics Short circuit detection voltage (SC).8 Open load detection voltage ) (O) 3 4 nternal output pull down 3) ( see page 9 and 14 ) (O) = 4 R O kω 1 no delay time after overtemperature switch off and short circuit in onstate External pull up resistor required for open load detection in off state. 3 not subject to production test, specified by design Page 6 417

7 nput Output Status level level Normal operation Short circuit to * Short circuit to bb (in offstate) Overload ** Overtemperature Open oad in Z ( 1) ) offstate *) Out ="": <.8 typ. **) Out ="": >.8 typ. Z = high impedance, potential depends on external circuit 1 with external resistor between bb and Page 7 417

8 Terms nductive and overvoltage output clamp bb + bb bb PROFET ON Z ON bb R ON clamped to 59 min. nput circuit (ESD protection) Overvoltage protection of logic part R The use of ESD zener diodes as voltage clamp at DC conditions is not recommended Reverse battery protection ± 5 R ogic R Power nverse Diode bb Z1 =6.1 typ., Z = bb(az) =6 min., R =3.5 kω typ., R =15Ω Status output +5 R R R (ON) Signal Power R =15Ω, R =3.5kΩ typ., Temperature protection is not active during inverse current ESD ZD ESD ZD Page 8 417

9 Openload detection OFFstate diagnostic condition: > 3 typ.; =low bb disconnect with charged inductive load R EXT high bb OFF PROFET ogic unit Open load detection R O Signal bb disconnect bb PROFET bb nductive oad switchoff energy dissipation E bb bb E AS E oad disconnect with pull up = PROFET Z { E E R R bb PROFET Energy stored in load inductance: E = ½ * * While demagnetizing load inductance, the enérgy dissipated in PROFET is E AS = E bb + E E R = ON(C) * i (t) dt, with an approximate solution for R > Ω: bb E AS * * R = *( bb+ C + * R ( ) )*ln( 1 C ) ( ) Page 9 417

10 Typ. transient thermal impedance Z thja =f(t p 6cm heatsink area Parameter: D=t p /T 1 K/W D=.5 D=. Typ. transient thermal impedance Z thja =f(t p min. footprint Parameter: D=t p /T 1 K/W D=.5 D=. ZthJA 1 1 D=.1 D=.5 D=. ZthJA 1 1 D=.1 D=.5 D=. 1 D=.1 1 D= D= 1 1 D= Typ. onstate resistance R ON = f( ) ; bb = 13,5 ; in = high t p s Typ. onstate resistance R ON = f( bb ); = 1 A ; in = high t p s mω 3 mω C RON RON C 4 C C bb Page 1 417

11 Typ. turn on time t on = f( ); R = 47Ω Typ. turn off time t off = f( ); R = 47Ω 16 µs µs 1 ton toff C 16 Typ. slew rate on d/dt on = f( ) ; R = 47 Ω C 16 Typ. slew rate off d/dt off = f( ); R = 47 Ω /µs /µs d dton 1.4 d dtoff C C 16 Page

12 Typ. standby current bb(off) = f( ) ; bb = 4 ; = low Typ. leakage current (off) = f( ) ; bb = 4 ; = low 1.5 µa µa bb(off) 6 (off) C C 16 Typ. initial peak short circuit current limit (SCp) = f( bb ) Typ. initial short circuit shutdown time t off(sc) = f(,start ) ; bb = 1 4 ms A 4 C 3 (SCp) 6 5 C 15 C toff(sc) bb C 16 Page 1 417

13 Typ. input current (on/off) = f( ); bb = 13,5; = low/high low,7; high = 5 1 Typ. input current = f( ); bb = µa µa C 15 C 8 on 3 6 off C 16 Typ. input threshold voltage (th) = f( ) ; bb = 13, Typ. input threshold voltage (th) = f( bb ) ; = 5 C on on (th) off (th) off C bb Page

14 Maximum allowable load inductance for a single switch off = f( ); start =15 C, R =Ω m Typ. status delay time t d() = f( bb ); = 5 C 3 µs 16 5 td() 14 1 td(+/) td(+) , A 1.5 Maximum allowable inductive switchoff energy, single pulse E AS = f( ); start = 15 C, bb = 13,5 18 mj bb Typ. internal output pull down R O = f( bb ) 8 kω C EAS 1 RO C 4 C A bb Page

15 Timing diagrams Figure 1a: bb turn on: Figure b: Switching a lamp, bb t Figure a: Switching a resistive load, turnon/off time and slew rate definition Figure c: Switching an inductive load 9% t on d/ dtoff 1% d/ dton t off t Page

16 Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling Figure 3b: Short circuit in onstate shut down by overtemperature, restart by cooling Output short to norm al operation O utput short to G N D ( SCp ) ( SCr ) (SCr) t m t d(+) t t eating up of the chip may require several milliseconds, depending on external conditions. Figure 5: Undervoltage restart of charge pump Figure 4: Overtemperature: Reset if < t o n b b ( u n d e r ) b b ( u c p ) b b T J t Page

17 Package and ordering code all dimensions in mm Package: PDSO86 Ordering code: Q676S736 Published by nfineon Technologies AG, St.MartinStrasse 53, D81669 München nfineon Technologies AG 1 All Rights Reserved. Printed circuit board (FR4, 1.5mm thick, one layer 7µm, 6cm active heatsink area ) as a reference for max. power dissipation P tot nominal load current (nom) and thermal resistance R thja Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. nfineon Technologies is an approved CECC manufacturer. nformation For further information on technology, delivery terms and conditions and prices please contact your nearest nfineon Technologies Office in Germany or our nfineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest nfineon Technologies Office. nfineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of nfineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. ife support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. f they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page