CSCI 2570 Introduction to Nanocomputing
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1 CSCI 2570 Introduction to Nanocomputing Introduction to NW Decoders John E Savage
2 Lecture Outline Growing nanowires (NWs) Crossbar-based computing Types of NW decoders Resistive model of decoders Addressing strategies for decoders Area efficiency of decoders. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 2
3 Encoded Nanowires Grown by Chemical Vapor Deposition Semiconducting NWs grown from seed catalysts; their diameters controlled by seed. silane molecules NW grows here gold catalyst silicon molecules Mod-doping Modulation Doping: dopants added to gas as NWs grow; doped sections have lithographic length. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 3
4 Fluidic Assembly of Differentiated NWs Random sample of coded NWs is floated on a liquid, deposited on chip, and dried. NWs self-assemble into parallel locations. Process repeated at right angles crossbar. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 4
5 Uniform NWs via Nanolithography Impress sawtooth pattern on soft polymer. Remove thin layer of polymer Deposit NWs in gaps as per lithography Thickness to remove Alternating layers of two materials. Etch away one of them to form sawtooth pattern. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 5
6 Uniform NWs NWs produced by SNAP Science, Melosh et al., vol 300, April Use nanolithography to deposit metal on substrate containing S i on S i O 2 on S i. Etch away S i between wires, remove wires to reveal S i wires. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 6
7 Growing Nanowires to Make Crossbars Chemical vapor deposition (CVD). Fluidic assembly. silane molecules CVD NWs gold (Lieber, Harvard) silicon molecules Nanoimprint lithography Thickness to remove GaAs AlGaAs SNAP NWs (Heath, Caltech) Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 7
8 Controlling NW Crosspoints What happens if each NW must be connected to one MW? A lot of area is wasted! Controlling NWs (Heath, Caltech) Goal: control many NWs with few MWs. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 8
9 The Crossbar Simple Decoder Programmable molecules (PMs) at NW crosspoints. Composite Decoder Field-effect transistors (FETs) form at NW/MW junctions. NWs controlled by mesoscale wires (MWs). Goal: reliable control of NWs with few MWs. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 9
10 Multiple Simple Decoders They reduce the number of NW types needed. aw 1 aw 2 aw 3 aw b Ohmic Region Ohmic Region Ohmic Region Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 10
11 Controlling NWs with MWs Grow NWs with controllable sections (FETs). Place MWs near these sections. Current Controllable NW section Mesoscale Wire (MW) When voltage applied to MW, current in NW is turned off. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 11
12 Types of NW Control Field effect control of NW resistance Electric fields deplete regions of carriers NWs can have lightly and heavily doped sections Fields on NWs intensified by High-K dielectrics Binary versus modulated fields In most decoders electric field is on or off. Modulated fields used in an IBM device (IEDM 05) Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 12
13 Uniform and Encoded Nanowires Two types of NW: Uniform deposited during assembly Encoded grown before assembly Uniform NWs deposited using nanostamping or nanolithographic methods Encoded NWs are grown in batches of one type, types are mixed and then deposited Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 13
14 Types of Simple Decoder Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 14
15 Decoding Mod-Doped NWs A meso-scale wire (MW) and lightly-doped NW region form field effect transistor (FET). Lightly-doped, controllable region Conducting NW High Low Exciting two MWs, activates one NW. High Low Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 15
16 Issues with Mod-Doped NWs Because NWs are assembled fluidically, can t guarantee alignment of controllable regions with MWs. Need to mix NWs with different encoding patterns. Can t guarantee that all patterns will appear. Patterns may be repeated. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 16
17 A Decoder for Core-Shell NWs NWs have s shells of m differentially etchable materials; materials in adjacent shells are different. They form N = m(m-1) (s-1) NW types. Under each MW etch the s materials forming a NW shell sequence. N NWs are controlled by N MWs. 12 codewords (and MWs) suffice to control 1,000 NWs for w = 10! Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 17
18 Issues with Core-Shell NWs Shells increase separation between NWs. Shells need to have uniform thickness. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 18
19 Randomized Contact Decoder Gold particles are scattered at random so that with probability 0.5 there are particles between NW- MW pairs. Electric field on a MW turns a NW off if there is gold between them. How many MWs needed to control each NW? a 1 a 2 a 3 a 4 Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 19
20 Issues with Randomized Contact Decoder Need a method to ensure uniformly random distribution of contacts between NWs and MWs. Need to model contacts providing limited control of NW by MW. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 20
21 Deterministic Logarithmic Mask-Based Decoder High-K dielectric regions couple NWs & MWs Problem: can t make such small LRs or position them accurately Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 21
22 Randomized Mask-Based Decoder Randomly shift M copies of smallest litho regions to control all NWs with prob. > 1-ε Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 22
23 Issues with Mask-Based Decoder Need to model displacement of masks. Should adjacent holes be put on the same or adjacent masks? Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 23
24 CMOL (CMOS/Molecular Logic) Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 24
25 Issues with CMOL What accuracy is needed in the angle between the coarse and fine grids? Can the nanoscale points of the correct length be formed on the coarse grid? Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 25
26 Micro to Nano Addressing Block (MNAB) IBM announced 4-fin device at 2005 IEDM. Claims: Completely deterministic Silicon based No critical alignment 100x current ratios between on & off NWs with 20nm NWs Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 26
27 Issues with MNAB Multiple voltage levels needed. Uncertainties in NW width and separation introduce uncertainties in voltages needed. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 27
28 Models of Decoders Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 28
29 Alignment of Differentiated NWs Modulation-doped Core-Shell Misaligned NWs Aligned NWs Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 29
30 Ideal and Non-Ideal Decoder Models If NW is controlled (uncontrolled) by j th MW, c j = 1 (c j = 0); M MWs. NW codeword c = (c 1, c 2,..., c M ) Ideal (non-ideal) resistive model c j = 1 if resistance = (>r high ) when j th MW is on c j = 0 if resistance = 0 (< r low ) when j th MW is off c j = e (error) otherwise. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 30
31 NW Addresses Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 31
32 Codewords Assigned to NWs by Stochastic Assembly Codeword for ith NW, n i, is If jth MW is on and c ji = 1, n i is off. If jth MW is off and c ji = 0, n i is on. If c ji = e, control of n i is ambiguous. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 32
33 Addressability of Nanowires NW n i is individually addressable (i.a.) if there are on MWs causing n i to be on &other NWs to be off c 2 and c 4 below are i.a. c 1 = (1,1,0,1,0) c 2 = (1,0,1,0,0) c 3 = (1,0,0,1,1) c 4 = (1,0,0,1,0) Codeword c is activated by address a = c (compl.) Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 33
34 NW Addressing Strategies All wires addressable in each contact group Each NW in each group is individually addressable. Most wires addressable in each group At least half the NWs in each group is individually addressable. All NW types present in each group All C codewords are present in each group Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 34
35 More NW Addressing Strategies Each NW type occurs in p groups All C codewords appear in p groups, p a fraction of g, the number of groups. All wires addressable in most groups Introduce spare contact groups. In most groups, all NWs are different. Discard the others. Take What You Get Use all individually addressable NWs in each contact group. Some will have more than others. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 35
36 Address Translation Addresses assigned to NWs during assembly Are unpredictable. Must be discovered. External addresses are assigned to internal ones by address translation circuit (ATC). ATC External addresses NW addresses Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 36
37 Reducing the Area of the ATC The ATC has one word for each of the N a addressable NWs. Area of ATC can be reduced by storing inputs to a CMOS decoder. Simple decoder CMOS Decoder w N = gw NWs Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 37
38 Crossbar Parameters g = number of contact groups. w = number of NWs per group. N = gw = number of NWs in each dimension. N a = no. of i.a. NWs with probability 1-ε. M = number of MWs. λ = ratio CMOS/nano feature size Crossbar stores N a2 values. A = (M λ + N) 2 + 2A ATC = area of Xbar + ATC Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 38
39 Comparison of NW Crossbars Crossbars are compared by the area they use for a given probability that N a NWs are addressable. Lect 10 Intro to NW Decoders CSCI 2570 John E Savage 39
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