Chapter 3 CMOS processing technology (II)
|
|
|
- Bruce Oliver
- 6 years ago
- Views:
Transcription
1 Chapter 3 CMOS processing technology (II) Twin-tub CMOS process 1. Provide separate optimization of the n-type and p-type transistors 2. Make it possible to optimize "Vt", "Body effect", and the "Gain" of n, p devices, independently. 3. Steps: A. Starting material: an n+ or p+ substrate with lightly doped -> "epitaxial" or "epi" layer -> to protect "latch up" B. Epitaxy" a. Grow high-purity silicon layers of controlled thickness b. With accurately determined dopant concentrations c. Electrical properties are determined by the dopant and its concentration in Si C. Process sequence a. Tub formation b. Thin-Oxide construction c. Source & drain implantations d. Contact cut definition e. Metallization Balanced performance of n and p devices can be constructed. (Substrate contacts are included in Fig.3.10) 2003/3/12 CMOS Process (II) 1
2 (7~8um) 青玉 or SiO2 ( 二氧化矽 ) Anisotropic Etch Form p-island (for n-device) Form n-island (for p-device) 2003/3/12 CMOS Process (II) 2
3 - Grow gate oxide through thermal oxidation - Deposit Doped Polysilicon Etch Polysilicon Step (h): n-implantation for source & drain Step (i) p-implantation Step (j) - Grow phosphorus glass - Etch glass to form contact cut - Evaporating alumni 2003/3/12 CMOS Process (II) 3
4 3.3 CMOS Process Enhancement (Interconnection) Metal Interconnect * CMOS circuit = CMOS logic process + Signal/Power/Clock-routing layers - Second-layer of metal (VIA1=M1 to M2) - Note: M1 must be involved in any contact to underlying areas Contact Etch Isolation layer Form a VIA (polysilicon, diffusion) - Process steps for two-metal process (Omitted) Poly Interconnect - Polysilicon layer is commonly used as interconnection of signals. - Reduce resistance of polysilicon to make long-distance interconnection - Combine polysilicon with a refractory metal (Silicon + Tantalum) 2003/3/12 CMOS Process (II) 4
5 Ω=20-40Ω/square Ω=1-5Ω/square Make long-distance Local Interconnection (for interconnect) - Local Interconnection allow a direct connection between ploysilicon and diffusion, alleviating the need for area-intensive contacts and metal - Example: Use of Local Interconnect in SRAM (save 25%) 2003/3/12 CMOS Process (II) 5
6 3.4 Layout Design Rules - Function: obtain a circuit with optimum yield in an area as well as possible - Performance yield * Conservative design rules Functional circuit Good yield * Aggressive design rules Bad yield (A) Line width/spacing Small open circuit Close short circuit (B) Spacing between two independent layers - In process: Compact circuit/layout for low cost and high speed (a) Geometric features for mask-making and lithographical (b) Interactions between different layers (e.g., poly + diffussion) - Rules: a. Micro(μ)-based rules Industry (submicron) b. Lambda-based rules: e.g.,, 1λ=0.6um for 1.2 um CMOS process) for 4-1.2um Scalable CMOS process. 2λ is the minimum channel length (L). - See Table 3.2 and figures (next four pages) 2003/3/12 CMOS Process (II) 6
7 2003/3/12 CMOS Process (II) 7
8 2003/3/12 CMOS Process (II) 8
9 Layout Design Rules: 2003/3/12 CMOS Process (II) 9
10 Contact Rules: There are several generally available contacts: - Metal to p-active (p-diffusion) - Metal to n-active (n-diffusion) - Metal to Polysilicon - VDD and VSS substrate contacts - Split (Substrate contacts) Layer assignment (Table3.4) - CIF: Caltech Intermediate Form - GDSII Format 2003/3/12 CMOS Process (II) 10
11 2003/3/12 CMOS Process (II) 11
12 3.5 Latchup - Latchup : Shorting of VDD and Vss lines Chip breakdown - Latchup Equivalent Circuit: Vertical : pnp - p = source/drain of p device (Emitter) - n = n-well (Base) - p = p-substrate (Collector) Lateral : npn - n = source/drain of n device (Emitter) - p= p-substrate (Base) - n= n-well (Collector) Rsubstrate, Rwell - Parasitic devices and resistors 2003/3/12 CMOS Process (II) 12
13 Latchup triggering: Transient/Impulse current in start-up A. Lateral triggering: current flows in the emitter of the lateral npn-transistor Trigger point : In,trigger = - Vpnp,on = 0.7V Vpnp-on αnpn Rwell - αnpn = common base gain of the lateral npn device - Rwell = well resistance B. Vertical triggering: Sufficient current is injected into the emitter of the vertical pnp transistor Latchup prevention - Latchup occur βnpn βpnp > 1 + Where IR,sub = IR,well = (βnpn+1)(ir,sub+ir,wellβpnp) VBE,,npn Rsub VBE,,npn Rsub (IDD-IR,sub) IDD = total supply current 2003/3/12 CMOS Process (II) 13
14 Observation to prevent latchup: 1. Reduce the resistor values 2. Reduce the gain of the parasitic devices - Approach: 1. Latchup-resistant CMOS process 2. Layout techniques (see section 3.5.4,3.5.5) 3.6 Technology-related CAD tools - Design Rule Check (DRC): On-line DRC and Off-line (Dracula) (3.6.1) - Circuit extraction (Layout Parameter Extraction, LPE) (3.6.2) - CMOS process simulator (Process Input Description Language (PIDL))(sec.3.9) and Supreme by Stanford University. 2003/3/12 CMOS Process (II) 14
Topic 3. CMOS Fabrication Process
Topic 3 CMOS Fabrication Process Peter Cheung Department of Electrical & Electronic Engineering Imperial College London URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk Lecture 3-1 Layout of a Inverter
CMOS Transistor and Circuits. Jan 2015 CMOS Transistor 1
CMOS Transistor and Circuits Jan 2015 CMOS Transistor 1 Latchup in CMOS Circuits Jan 2015 CMOS Transistor 2 Parasitic bipolar transistors are formed by substrate and source / drain devices Latchup occurs
2.8 - CMOS TECHNOLOGY
CMOS Technology (6/7/00) Page 1 2.8 - CMOS TECHNOLOGY INTRODUCTION Objective The objective of this presentation is: 1.) Illustrate the fabrication sequence for a typical MOS transistor 2.) Show the physical
Layout of a Inverter. Topic 3. CMOS Fabrication Process. The CMOS Process - photolithography (2) The CMOS Process - photolithography (1) v o.
Layout of a Inverter Topic 3 CMOS Fabrication Process V DD Q p Peter Cheung Department of Electrical & Electronic Engineering Imperial College London v i v o Q n URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk
Lecture 020 ECE4430 Review II (1/5/04) Page 020-1
Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught
Lecture 020 ECE4430 Review II (1/5/04) Page 020-1
Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught
VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras
VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras Lecture - 40 BICMOS technology So, today we are going to have the last class on this VLSI
Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI
1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward
Lecture 190 CMOS Technology, Compatible Devices (10/28/01) Page 190-1
Lecture 190 CMOS Technology, Compatible Devices (10/28/01) Page 190-1 LECTURE 190 CMOS TECHNOLOGY-COMPATIBLE DEVICES (READING: Text-Sec. 2.9) INTRODUCTION Objective The objective of this presentation is
Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced.
Unit 1 Basic MOS Technology Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced. Levels of Integration:- i) SSI:-
EE 330 Lecture 7. Design Rules. IC Fabrication Technology Part 1
EE 330 Lecture 7 Design Rules IC Fabrication Technology Part 1 Review from Last Time Technology Files Provide Information About Process Process Flow (Fabrication Technology) Model Parameters Design Rules
Basic Fabrication Steps
Basic Fabrication Steps and Layout Somayyeh Koohi Department of Computer Engineering Adapted with modifications from lecture notes prepared by author Outline Fabrication steps Transistor structures Transistor
CMOS Digital Integrated Circuits Lec 2 Fabrication of MOSFETs
CMOS Digital Integrated Circuits Lec 2 Fabrication of MOSFETs 1 CMOS Digital Integrated Circuits 3 rd Edition Categories of Materials Materials can be categorized into three main groups regarding their
Chapter 3 Basics Semiconductor Devices and Processing
Chapter 3 Basics Semiconductor Devices and Processing 1 Objectives Identify at least two semiconductor materials from the periodic table of elements List n-type and p-type dopants Describe a diode and
Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1. Topics
Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1 Topics What is semiconductor Basic semiconductor devices Basics of IC processing CMOS technologies 2006/9/27 2 1 What is Semiconductor
CS/ECE 5710/6710. Composite Layout
CS/ECE 5710/6710 Introduction to Layout Inverter Layout Example Layout Design Rules Composite Layout Drawing the mask layers that will be used by the fabrication folks to make the devices Very different
FABRICATION OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag
FABRICATION OF CMOS INTEGRATED CIRCUITS Dr. Mohammed M. Farag Outline Overview of CMOS Fabrication Processes The CMOS Fabrication Process Flow Design Rules Reference: Uyemura, John P. "Introduction to
Jack Keil Wolf Lecture. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Lecture Outline. MOSFET N-Type, P-Type.
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Jack Keil Wolf Lecture Lec 3: January 24, 2019 MOS Fabrication pt. 2: Design Rules and Layout http://www.ese.upenn.edu/about-ese/events/wolf.php
Notes. (Subject Code: 7EC5)
COMPUCOM INSTITUTE OF TECHNOLOGY & MANAGEMENT, JAIPUR (DEPARTMENT OF ELECTRONICS & COMMUNICATION) Notes VLSI DESIGN NOTES (Subject Code: 7EC5) Prepared By: MANVENDRA SINGH Class: B. Tech. IV Year, VII
UNIT I CMOS TECHNOLOGY
DEPARTMENT: ECE SUBJECT NAME: VLSI DESIGN QUESTION BANK SEMESTER VI SUBJECT CODE: EC2354 UNIT I CMOS TECHNOLOGY PART A ( 2 MARKS) 1. What are four generations of Integration Circuits? SSI (Small Scale
Chapter 3. Digital Integrated Circuit Design I. ECE 425/525 Chapter 3. Substrates in MOS doped n or p type Silicon (Chemical.
Digital Integrated Circuit Design I ECE 425/525 Professor R. Daasch Depar tment of Electrical and Computer Engineering Portland State University Portland, OR 97207-0751 (daasch@ece.pdx.edu) http://ece.pdx.edu/~ecex25
ESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 24, 2019 MOS Fabrication pt. 2: Design Rules and Layout Penn ESE 570 Spring 2019 Khanna Jack Keil Wolf Lecture http://www.ese.upenn.edu/about-ese/events/wolf.php
INTRODUCTION TO MOS TECHNOLOGY
INTRODUCTION TO MOS TECHNOLOGY 1. The MOS transistor The most basic element in the design of a large scale integrated circuit is the transistor. For the processes we will discuss, the type of transistor
PAPER SOLUTION_DECEMBER_2014_VLSI_DESIGN_ETRX_SEM_VII Prepared by Girish Gidaye
Q1a) The MOS System under External Bias Depending on the polarity and the magnitude of V G, three different operating regions can be observed for the MOS system: 1) Accumulation 2) Depletion 3) Inversion
Digital Integrated Circuit Design I ECE 425/525 Chapter 3
Digital Integrated Circuit Design I ECE 425/525 Chapter 3 Professor R. Daasch Depar tment of Electrical and Computer Engineering Portland State University Portland, OR 97207-0751 (daasch@ece.pdx.edu) http://ece.pdx.edu/~ecex25
EE 330 Lecture 21. Bipolar Process Flow
EE 330 Lecture 21 Bipolar Process Flow Exam 2 Friday March 9 Exam 3 Friday April 13 Review from Last Lecture Simplified Multi-Region Model I C βi B JSA IB β V 1 V E e V CE BE V t AF V BE >0.4V V BC
Session 3: Solid State Devices. Silicon on Insulator
Session 3: Solid State Devices Silicon on Insulator 1 Outline A B C D E F G H I J 2 Outline Ref: Taurand Ning 3 SOI Technology SOl materials: SIMOX, BESOl, and Smart Cut SIMOX : Synthesis by IMplanted
Sticks Diagram & Layout. Part II
Sticks Diagram & Layout Part II Well and Substrate Taps Substrate must be tied to GND and n-well to V DD Metal to lightly-doped semiconductor forms poor connection called Shottky Diode Use heavily doped
+1 (479)
Introduction to VLSI Design http://csce.uark.edu +1 (479) 575-6043 yrpeng@uark.edu Invention of the Transistor Vacuum tubes ruled in first half of 20th century Large, expensive, power-hungry, unreliable
Integrated Circuits: FABRICATION & CHARACTERISTICS - 4. Riju C Issac
Integrated Circuits: FABRICATION & CHARACTERISTICS - 4 Riju C Issac INTEGRATED RESISTORS Resistor in a monolithic IC is very often obtained by the bulk resistivity of one of the diffused areas. P-type
Color Plates SIMULATION OF SEMICONDUCTOR LITHOGRAPHY AND TOPOGRAPHY - ARN 7
Color Plates SIMULATION OF SEMICONDUCTOR LITHOGRAPHY AND TOPOGRAPHY - ARN 7 FIGURE CP.1 Layout and cross section of an N-Well CMOS process using 2D models in SIMPL-2 [rzz.lee.phd]. FIGURE CP.2 Magnified
The Art of ANALOG LAYOUT Second Edition
The Art of ANALOG LAYOUT Second Edition Alan Hastings 3 EARSON Pearson Education International Contents Preface to the Second Edition xvii Preface to the First Edition xix Acknowledgments xxi 1 Device
VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras
VLSI Technology Dr. Nandita Dasgupta Department of Electrical Engineering Indian Institute of Technology, Madras Lecture - 39 Latch up in CMOS We have been discussing about the problems in CMOS, basic
Unit-1. MOS Transistor Theory
VLSI DESIGN -EEE Unit-1 MOS Transistor Theory VLSI DESIGN UNIT I Contents: 1.1 Historical Perspective 1.2 What is VLSI? - Introduction 1.3 VLSI Design Flow 1.4 Design Hierarchy 1.5 Basic MOS Transistor
! Review: MOS IV Curves and Switch Model. ! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. !
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 21, 2017 MOS Fabrication pt. 2: Design Rules and Layout Lecture Outline! Review: MOS IV Curves and Switch Model! MOS Device Layout!
420 Intro to VLSI Design
Dept of Electrical and Computer Engineering 420 Intro to VLSI Design Lecture 0: Course Introduction and Overview Valencia M. Joyner Spring 2005 Getting Started Syllabus About the Instructor Labs, Problem
Wiring Parasitics. Contact Resistance Measurement and Rules
Wiring Parasitics Contact Resistance Measurement and Rules Connections between metal layers and nonmetal layers are called contacts. Connections between metal layers are called vias. For non-critical design,
Electromagnetic Compatibility ( EMC )
Electromagnetic Compatibility ( EMC ) Introduction about IC Immunity Testing 1-5 -1 Agenda 1-5 -2 Semiconductor Immunity Test ESD ( ) Chip level test Human Body Mode MIL-STD 883E method 3015.7 or EIA/JESD
UNIT III VLSI CIRCUIT DESIGN PROCESSES. In this chapter we will be studying how to get the schematic into stick diagrams or layouts.
UNIT III VLSI CIRCUIT DESIGN PROCESSES In this chapter we will be studying how to get the schematic into stick diagrams or layouts. MOS circuits are formed on four basic layers: N-diffusion P-diffusion
VLSI Design. Introduction
VLSI Design Introduction Outline Introduction Silicon, pn-junctions and transistors A Brief History Operation of MOS Transistors CMOS circuits Fabrication steps for CMOS circuits Introduction Integrated
! Review: MOS IV Curves and Switch Model. ! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. !
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 21, 2016 MOS Fabrication pt. 2: Design Rules and Layout Lecture Outline! Review: MOS IV Curves and Switch Model! MOS Device Layout!
ESE 570: Digital Integrated Circuits and VLSI Fundamentals
ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 21, 2016 MOS Fabrication pt. 2: Design Rules and Layout Penn ESE 570 Spring 2016 Khanna Adapted from GATech ESE3060 Slides Lecture
VLSI Design. Introduction
Tassadaq Hussain VLSI Design Introduction Outcome of this course Problem Aims Objectives Outcomes Data Collection Theoretical Model Mathematical Model Validate Development Analysis and Observation Pseudo
Layers. Layers. Layers. Transistor Manufacturing COMP375 1
Layers VLSI COMP370 Intro to Computer Architecture t Applications Middleware other CS classes High level languages Machine Language Microcode Logic circuits Gates Transistors Silicon structures Layers
Power MOSFET Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Power MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Evolution of low-voltage (
Semiconductor Physics and Devices
Metal-Semiconductor and Semiconductor Heterojunctions The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is one of two major types of transistors. The MOSFET is used in digital circuit, because
Layers. Layers. Layers. Transistor Manufacturing COMP375 1
VLSI COMP375 Computer Architecture Middleware other CS classes Machine Language Microcode Logic circuits Transistors Middleware Machine Language - earlier Microcode Logic circuits Transistors Middleware
Chapter 2 : Semiconductor Materials & Devices (II) Feb
Chapter 2 : Semiconductor Materials & Devices (II) 1 Reference 1. SemiconductorManufacturing Technology: Michael Quirk and Julian Serda (2001) 3. Microelectronic Circuits (5/e): Sedra & Smith (2004) 4.
ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices
ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices Christopher Batten School of Electrical and Computer Engineering Cornell University http://www.csl.cornell.edu/courses/ece5950 Simple Transistor
EECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 11/6/2007 MOSFETs Lecture 6 BJTs- Lecture 1 Reading Assignment: Chapter 10 More Scalable Device Structures Vertical Scaling is important. For example,
ECEN474/704: (Analog) VLSI Circuit Design Fall 2016
ECEN474/704: (Analog) VLSI Circuit Design Fall 2016 Lecture 1: Introduction Sam Palermo Analog & Mixed-Signal Center Texas A&M University Announcements Turn in your 0.18um NDA form by Thursday Sep 1 No
III. United States Patent (19) Hutter et al. N- BURED AYER P SUBSTRATE. A vertical PNP structure for use in a merged bipolar/cmos
United States Patent (19) Hutter et al. III US00447A 11 Patent Number: 5,5,447 ) Date of Patent: Oct. 3, 1995 54) 75 73 21 22 63) 51 (52) 58) 56) VERTICAL PNP TRANSISTOR IN MERGED BIPOLAR/CMOS TECHNOLOGY
EE 434 ASIC and Digital Systems. Prof. Dae Hyun Kim School of Electrical Engineering and Computer Science Washington State University.
EE 434 ASIC and Digital Systems Prof. Dae Hyun Kim School of Electrical Engineering and Computer Science Washington State University Preliminaries VLSI Design System Specification Functional Design RTL
AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015
Q.2 a. By using Norton s theorem, find the current in the load resistor R L for the circuit shown in Fig.1. (8) Fig.1 IETE 1 b. Explain Z parameters and also draw an equivalent circuit of the Z parameter
EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02
EE 5611 Introduction to Microelectronic Technologies Fall 2014 Thursday, September 04, 2014 Lecture 02 1 Lecture Outline Review on semiconductor materials Review on microelectronic devices Example of microelectronic
Device Technologies. Yau - 1
Device Technologies Yau - 1 Objectives After studying the material in this chapter, you will be able to: 1. Identify differences between analog and digital devices and passive and active components. Explain
FUNDAMENTALS OF MODERN VLSI DEVICES
19-13- FUNDAMENTALS OF MODERN VLSI DEVICES YUAN TAUR TAK H. MING CAMBRIDGE UNIVERSITY PRESS Physical Constants and Unit Conversions List of Symbols Preface page xi xiii xxi 1 INTRODUCTION I 1.1 Evolution
ECEN474: (Analog) VLSI Circuit Design Fall 2011
ECEN474: (Analog) VLSI Circuit Design Fall 2011 Lecture 1: Introduction Sebastian Hoyos Analog & Mixed-Signal Center Texas A&M University Analog Circuit Sequence 326 2 Why is Analog Important? [Silva]
EC0306 INTRODUCTION TO VLSI DESIGN
EC0306 INTRODUCTION TO VLSI DESIGN UNIT I INTRODUCTION TO MOS CIRCUITS Why VLSI? Integration improves the design: o lower parasitics = higher speed; o lower power; o physically smaller. Integration reduces
Review: CMOS Logic Gates
Review: CMOS Logic Gates INV Schematic NOR Schematic NAND Schematic + Vsg - pmos x x Vin Vout = Vin y + Vgs - nmos CMOS inverts functions CMOS Combinational Logic x g(x,y) = x + y use DeMorgan relations
VLSI Design. Brief Syllabus. Course Scope. Major Contents. IC Evolution. Today s Outline
1 VLSI Design Tsung-Chu Huang Department of Electronic Engineering National Changhua University of Education Email: tch@cc.ncue.edu.tw 2011/09/19 Brief Syllabus 1. Visit http://testlab.ncue.edu.tw/tch
2 MARK QUESTIONS & ANSWERS UNIT1-MOS TRANSISTOR PRINCIPLE
2 MARK QUESTIONS & ANSWERS UNIT1-MOS TRANSISTOR PRINCIPLE 1.What are four generations of Integration Circuits? _ SSI (Small Scale Integration) _ MSI (Medium Scale Integration) _ LSI (Large Scale Integration)
Power Bipolar Junction Transistors (BJTs)
ECE442 Power Semiconductor Devices and Integrated Circuits Power Bipolar Junction Transistors (BJTs) Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Bipolar Junction Transistor (BJT) Background The
DESIGN AND FABRICATION OF A LATERAL BIPOLAR PNP TRANSISTOR COMPATIBLE WITH RIT S DOUBLE DIFFUSED PROCESS
DESIGN AND FABRICATION OF A LATERAL BIPOLAR PNP TRANSISTOR COMPATIBLE WITH RIT S DOUBLE DIFFUSED PROCESS James A. Will II Senior Microelectronic Engineering Student Rochester Institute of Technology ABSTRACT
MOSFET Parasitic Elements
MOSFET Parasitic Elements Three MITs of the ay Components of the source resistance and their influence on g m and R d Gate-induced drain leakage (GIL) and its effect on lowest possible leakage current
Mechanis m Faliures. Group Leader Jepsy 1)Substrate Biasing 2) Minority Injection. Bob 1)Minority-Carrier Guard Rings
Mechanis m Faliures Group Leader Jepsy 1)Substrate Biasing 2) Minority Injection As im 1)Types Of Guard Rings Sandra 1)Parasitics 2)Field Plating Bob 1)Minority-Carrier Guard Rings Shawn 1)Parasitic Channel
Microelectronics, BSc course
Microelectronics, BSc course MOS circuits: CMOS circuits, construction http://www.eet.bme.hu/~poppe/miel/en/14-cmos.pptx http://www.eet.bme.hu The abstraction level of our study: SYSTEM + MODULE GATE CIRCUIT
Design Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness
MIT International Journal of Electronics and Communication Engineering, Vol. 4, No. 2, August 2014, pp. 81 85 81 Design Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness Alpana
EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng
EE4800 CMOS Digital IC Design & Analysis Lecture 1 Introduction Zhuo Feng 1.1 Prof. Zhuo Feng Office: EERC 730 Phone: 487-3116 Email: zhuofeng@mtu.edu Class Website http://www.ece.mtu.edu/~zhuofeng/ee4800fall2010.html
Latchup prevention by using guard ring structures in a 0.8 µm bulk CMOS process
Latchup prevention by using guard ring structures in a 0.8 µm bulk CMOS process Felipe Coyotl Mixcoatl 1, Alfonso Torres Jacome Instituto Nacional de Astrofísica, Óptica y Electrónica Luis Enrique Erro
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today. Variation. Variation. Process Corners.
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 13: October 3, 2012 Layout and Area Today Coping with Variation (from last time) Layout Transistors Gates Design rules Standard
Solid State Devices- Part- II. Module- IV
Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the
BICMOS Technology and Fabrication
12-1 BICMOS Technology and Fabrication 12-2 Combines Bipolar and CMOS transistors in a single integrated circuit By retaining benefits of bipolar and CMOS, BiCMOS is able to achieve VLSI circuits with
LSI ON GLASS SUBSTRATES
LSI ON GLASS SUBSTRATES OUTLINE Introduction: Why System on Glass? MOSFET Technology Low-Temperature Poly-Si TFT Technology System-on-Glass Technology Issues Conclusion System on Glass CPU SRAM DRAM EEPROM
CMOS Technology. 1. Why CMOS 2. Qualitative MOSFET model 3. Building a MOSFET 4. CMOS logic gates. Handouts: Lecture Slides. metal ndiff.
CMOS Technology 1. Why CMOS 2. Qualitative MOSFET model 3. Building a MOSFET 4. CMOS logic gates poly pdiff metal ndiff Handouts: Lecture Slides L03 - CMOS Technology 1 Building Bits from Atoms V in V
(12) Patent Application Publication (10) Pub. No.: US 2001/ A1
(19) United States US 2001.0020719A1 (12) Patent Application Publication (10) Pub. No.: US 2001/0020719 A1 KM (43) Pub. Date: Sep. 13, 2001 (54) INSULATED GATE BIPOLAR TRANSISTOR (76) Inventor: TAE-HOON
College of Engineering Department of Electrical Engineering and Computer Sciences University of California, Berkeley
College of Engineering Department of Electrical Engineering and Below are your weekly quizzes. You should print out a copy of the quiz and complete it before your lab section. Bring in the completed quiz
Introduction to VLSI Technology
Introduction to VLSI Technology Introduction: The invention of the transistor by William B. Shockley, Walter H. Brattain and John Bardeen of Bell Telephone Laboratories drastically changed the electronics
IFSIN. WEB PAGE Fall ://weble.upc.es/ifsin/
IFSIN IMPLEMENTACIÓ FÍSICA DE SISTEMES INTEGRATS NANOMÈTRICS IMPLEMENTACIÓN N FÍSICA F DE SISTEMAS INTEGRADOS NANOMÉTRICOS PHYSICAL IMPLEMENTATION OF NANOMETER INTEGRATED SYSTEMS Fall 2008 Prof. Xavier
1 FUNDAMENTAL CONCEPTS What is Noise Coupling 1
Contents 1 FUNDAMENTAL CONCEPTS 1 1.1 What is Noise Coupling 1 1.2 Resistance 3 1.2.1 Resistivity and Resistance 3 1.2.2 Wire Resistance 4 1.2.3 Sheet Resistance 5 1.2.4 Skin Effect 6 1.2.5 Resistance
TECHNO INDIA BATANAGAR (DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING) QUESTION BANK- 2018
TECHNO INDIA BATANAGAR (DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING) QUESTION BANK- 2018 Paper Setter Detail Name Designation Mobile No. E-mail ID Raina Modak Assistant Professor 6290025725 raina.modak@tib.edu.in
Key Questions. ECE 340 Lecture 39 : Introduction to the BJT-II 4/28/14. Class Outline: Fabrication of BJTs BJT Operation
Things you should know when you leave ECE 340 Lecture 39 : Introduction to the BJT-II Fabrication of BJTs Class Outline: Key Questions What elements make up the base current? What do the carrier distributions
MOSIS Scalable CMOS Design Rules. (revision 7) Jen-I Pi. the MOSIS Service. University of Southern California Admiralty Way
MOSIS Scalable CMOS Design Rules (revision 7) Jen-I Pi 1 Introduction 1.1 SCMOS Design Rules the MOSIS Service Information Sciences Institute University of Southern California 4676 Admiralty Way Marina
Fundamentals of Integrated Circuit Design
1. Definitions Integrated circuits Fundamentals of Integrated Circuit Design An integrated circuit (IC) is formed by components and interconnections that are fabricated on a single silicon piece of semiconductor,
CMOS: Fabrication principles and design rules
CMOS: Fabrication principles and design rules João Canas Ferreira University of Porto Faculty of Engineering 2016-02-29 Topics 1 Overview of the CMOS fabrication process 2 Geometric design rules João Canas
EE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2011 PROBLEM SET #2. Due (at 7 p.m.): Tuesday, Sept. 27, 2011, in the EE C245 HW box in 240 Cory.
Issued: Tuesday, Sept. 13, 2011 PROBLEM SET #2 Due (at 7 p.m.): Tuesday, Sept. 27, 2011, in the EE C245 HW box in 240 Cory. 1. Below in Figure 1.1 is a description of a DRIE silicon etch using the Marvell
Photolithography I ( Part 1 )
1 Photolithography I ( Part 1 ) Chapter 13 : Semiconductor Manufacturing Technology by M. Quirk & J. Serda Bjørn-Ove Fimland, Department of Electronics and Telecommunication, Norwegian University of Science
INTEGRATED CIRCUIT ENGINEERING
INTEGRATED CIRCUIT ENGINEERING Basic Technology By the Stoff of Integraied Circuit Engineering Corporation, Phoenix, Arizona GLEN R. MADLAND ROBERT L. PRITCHARD HOWARD K. DICKEN FRANK H. BOWER ROBERT D.
Design cycle for MEMS
Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor
2009 Spring CS211 Digital Systems & Lab 1 CHAPTER 3: TECHNOLOGY (PART 2)
1 CHAPTER 3: IMPLEMENTATION TECHNOLOGY (PART 2) Whatwillwelearninthischapter? we learn in this 2 How transistors operate and form simple switches CMOS logic gates IC technology FPGAs and other PLDs Basic
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and
Source: IC Layout Basics. Diodes
Source: IC Layout Basics C HAPTER 7 Diodes Chapter Preview Here s what you re going to see in this chapter: A diode is a PN junction How several types of diodes are built A look at some different uses
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,
EE 330 Lecture 7. Design Rules
EE 330 Lecture 7 Design Rules Last time: Response time of logic gates A Y C L t R C HL SWn L t R C LH SWp L C L proportional to #gates driven to avg input cap of gates R SW proportional length/width Last
Comparison of Different Cell Concepts for 1200V- NPT-IGBT's
Comparison of Different Cell Concepts for 12V- NPT-IGBT's R.Siemieniec, M.Netzel, R. Herzer, D.Schipanski Abstract - IGBT's are relatively new power devices combining bipolar and unipolar properties. In
UNIVERSITY OF SASKATCHEWAN College of Engineering Department of Electrical Engineering. E.E VLSI Circuit Design Instructor: R.J.
UNIVRSITY OF SASKATCHWAN College of ngineering Department of lectrical ngineering.. 432.3 VLSI Circuit Design Instructor: R.J. Bolton MID-TRM XAMINATION February 10, 2004 5:30 PM - 7:00 PM STUDNT NAM:
Alternatives to standard MOSFETs. What problems are we really trying to solve?
Alternatives to standard MOSFETs A number of alternative FET schemes have been proposed, with an eye toward scaling up to the 10 nm node. Modifications to the standard MOSFET include: Silicon-in-insulator
A FIVE MICRON, SELF-ALIGNED, POLYSILICON GATE CMOS PROCESS DESIGN
A FIVE MICRON, SELF-ALIGNED, POLYSILICON GATE CMOS PROCESS DESIGN BY JOHN P. SCOOPO Fifth Year Microelectronic Engineering Student Rochester Institute of Tehnology ABSTRACT The design of a five micron,
EE 410: Integrated Circuit Fabrication Laboratory
EE 410: Integrated Circuit Fabrication Laboratory 1 EE 410: Integrated Circuit Fabrication Laboratory Web Site: Instructor: http://www.stanford.edu/class/ee410 https://ccnet.stanford.edu/ee410/ (on CCNET)