Low Voltage Input LDO Voltage Regulator with Soft-Start Function

Transcription

1 XC66 Series ETR5_7 Low Voltage Input LDO Voltage Regulator with Soft-Start Function GENERAL DESCRIPTION The XC66 series is a low voltage input CMOS LDO regulator which provides highly accurate (±mv) outputs and can supply current efficiently due to its ultra low on-resistance even at low output voltages. The series is ideally suited to the applications which require very low dropout voltage operation and consists of a voltage reference, an error amplifier, a driver transistor, a current limiter, a fold back circuit, a thermal shutdown (TSD) circuit, an under voltage lock out (UVLO) circuit, soft-start circuit and a phase compensation circuit. Output voltage is selectable in.5v increments within a range of.7v to.8v using laser trimming technology and ceramic capacitors can be used for the output stabilization capacitor (C L ). The over current protection circuit (the current limiter and the fold back circuit) as well as the thermal shutdown circuit (the TSD circuit) are built-in. These two protection circuits will operate when either the output current reaches the current limit level or the junction temperature reaches the temperature limit level. With the built-in UVLO function, the regulator output is forced OFF when the voltage level at the VBIAS pin or the VIN pin falls below the UVLO voltage level. With the soft-start function, the inrush current from V IN to V OUT for charging C L at start-up can be reduced and makes the V IN stable. The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor (C L ) to be discharged via the internal auto-discharge switch which is located between the V OUT pin and the V SS pin. As a result the V OUT pin quickly returns to the V SS level. APPLICATIONS Smart phones / Mobile phones Portable game consoles Digital still cameras / Camcorders Digital audio equipment Mobile devices / treminals FEATURES Maximum Output Current Dropout Voltage Bias Voltage Range Input Voltage Range Range Accuracy Power Consumption UVLO TSD (Detect/Release) Soft-Start Time Operating Temperature Range Function Low ESR Capacitor Packages Environmentally Friendly : ma (Limit:55mA TYP.) : 8mV@IOUT=mA (TYP.) (at VBIAS - VOUT=.V) :.5V ~ 6.V (VBIAS - VOUT.V) :.V ~.V(VIN VBIAS) :.7V ~.8V (.5V increments) :±mv : IBIAS=5μA, IIN=.μA (TYP.) IBIAS=.μA, IIN=.μA (TYP.) : VBIAS=.V, VIN=.V (TYP.) : 5 /5 (TYP.) : V OUT =.V (TYP.) : - ~ +85 : CL High Speed Auto-Discharge : Ceramic Capacitor Compatible : USP-6C, SOT-5, SOT-89-5 : EU RoHS Compliant, Pb Free TYPICAL APPLICATION CIRCUIT VBIAS =.6V, VIN =.8V, VOUT =.5V TYPICAL PEFORMANCE CHARACTERISTICS Dropout Voltage vs. Output Current Dropout Voltage: Vdif(mV) XC66BMR VBIAS=.V VBIAS=.V VBIAS=.6V VBIAS=.V VBIAS=5.V Ta=5 [ ] Output Current: IOUT(mA) /

2 XC66 Series PIN CONFIGURATION USP-6C SOT-5 SOT-89-5 VOUT 5 CE VIN VBIAS VSS *The heat dissipation pad of the USP-6C package is recommended to solder as the recommended mount pattern and metal mask pattern for mounting strength. This pad should be electrically opened or connected to the VBIAS (No.) pin. SOT-5 (TOP VIEW) PIN ASSIGNMENT PIN NUMBER USP-6C SOT-5 SOT-89-5 PIN NAME FUNCTION VBIAS Power Supply Input VIN Driver Transistor Input 5 5 VOUT Output VSS Ground 6 CE ON/OFF Control PRODUCT CLASSIFICATION Ordering Information XC (*) : CE High Active, Soft-Start Function Built-in, CL Auto Discharge Function (*) (*) MARK DESCRIPTION SYMBOL DESCRIPTION A Pull-Down Resistor Built-in Type of Regulators B No Pull-Down Resistor Built-in 7 ~ 8 e.g.) VOUT(T)=.V =,= 56-7 Type Packages Taping Type (*) B MR MR-G ER ER-G PR PR-G.V increments e.g.).v =,=,=.5V increments e.g.).5v =,=,=B SOT-5 SOT-5 USP-6C USP-6C SOT-89-5 SOT-89-5 The -G suffix indicates that the products are Halogen and Antimony free as well as being fully EU RoHS compliant. The device orientation is fixed in its embossed tape pocket. For reverse orientation, please contact your local Torex sales office or representative. (Standard orientation: 5R-7, Reverse orientation: 5L-7) /

3 XC66 Series BLOCK DIAGRAMS ()XC66A Series V BIAS V IN Voltage Reference With Soft Start + Error Amp - V OUT CE/ Under Voltage Lock Out Thermal Protection Current Limit R Rdischg CE ON/OFF Control each circuit CE/ CE R pull-down R V SS () XC66B Series ()XC66B Series V BIAS V IN Voltage Reference With Soft Start + Error Amp - V OUT CE/ Under Voltage Lock Out Thermal Protection Current Limit R Rdischg CE ON/OFF Control each circuit CE/ CE R V SS *Diodes inside the circuit are an ESD protection diode and a parasitic diode. /

4 XC66 Series MAXIMUM ABSOLUTE RATINGS Ta=5 PARAMETER SYMBOL RATINGS UNITS Bias Voltage VBIAS VSS-. ~ +7. V Input Voltage VIN VSS-. ~ +7. V Output Current IOUT (*) 7 ma VOUT VSS-. ~ VBIAS+. VSS-. ~ VIN+. V CE Input Voltage VCE VSS-. ~ +7. V USP-6C (PCB mounted) * Power Dissipation SOT-5 Pd 5 6 (PCB mounted) * mw SOT (PCB mounted) * Operating Temperature Range Topr - ~ +85 Storage Temperature Range Tstg -55 ~ +5 (*) IOUT=Less than Pd / (VIN-VOUT) (*) The power dissipation figure shown is PCB mounted. Please refer to pages 9~ for details. /

5 XC66 Series ELECTRICAL CHARACTERISTICS Ta=5 PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Bias Voltage (*) V BIAS V CE =V BIAS,V IN =V OUT(T) +.V.5-6. V Input Voltage (*) V IN V BIAS =V CE =.6V. -. V VOUT(E) (*) VBIAS=VCE=.6V, VIN =VOUT(T)+.V, IOUT=mA Maximum Output Current Maximum Output Current Maximum Output Current Load Regulation IOUTMAX IOUTMAX IOUTMAX VOUT V CE =V BIAS,V BIAS -V OUT(T).V V IN =V OUT(T) +.5V V CE =V BIAS,V BIAS -V OUT(T).V V IN =V OUT(T) +.5V V CE =V BIAS,V BIAS -V OUT(T).5V V IN =V OUT(T) +.5V VBIAS=VCE=.6V, VIN=VOUT(T)+.V, ma IOUT ma -. VOUT(T) (*) +. V E- (*5) - - ma - - ma - - ma mv Dropout Voltage Vdif (*7) VBIAS=VCE, IOUT=mA E- (*6) mv Dropout Voltage Vdif (*7) V CE =V BIAS, I OUT =ma E- (*6) mv Dropout Voltage Vdif (*7) V CE =V BIAS, I OUT =ma E- (*6) mv Dropout Voltage Vdif (*7) V CE =V BIAS, I OUT =ma E- (*6) mv Supply Current IBIAS VBIAS=VCE=.6V, VIN=VOUT(T)+.V VOUT=OPEN μa Supply Current IIN VBIAS=VCE=.6V, VIN=VOUT(T)+.V VOUT=OPEN... μa V OUT(T).V V BIAS =V CE =.6V, V IN =V OUT(T) V OUT = V OUT(T) -.5V Bias Current (*) IBIASMAX V OUT(T) <.V V BIAS =V CE =.6V, V IN =.V V OUT = V OUT(T) -.5V -..5 ma Stand-by Current IBIAS_STB VBIAS=6.V, VIN=.V, VCE=VSS -.. μa Stand-by Current IIN_STB VBIAS=6.V, VIN=.V, VCE=VSS -..5 μa V OUT(T).V V OUT(T) +.V V BIAS 6.V, Bias Regulation VOUT/ V IN =V OUT(T) +.V, V CE =V BIAS, I OUT =ma ( VBIAS VOUT) V OUT(T) <.V -.. %/V.5V V BIAS 6.V, V IN =V OUT(T) +.V, V CE =V BIAS, I OUT =ma Input Regulation VOUT(T).9V, V OUT(T) +.V VIN.V, VOUT/ VBIAS=VCE=.6V, IOUT=mA ( VIN VOUT) V OUT(T)<.9V, -.. %/V.V VIN.V VBIAS=VCE=.6V, IOUT=mA Bias Voltage UVLO VBIAS_UVLO VCE =VBIAS, VIN =VOUT(T)+.V, IOUT=mA.7..5 V Input Voltage UVLO VIN_UVLO VBIAS=VCE=.6V, IOUT=mA.7..6 V VBIAS Ripple Rejection VIN Ripple Rejection VBIAS_PSRR VIN_PSRR VBIAS= V CE =.6VDC+.Vp-pAC, VIN=VOUT(T)+.V, IOUT=mA,f=kHz VIN=VOUT(T)+.VDC+.Vp-pAC, VBIAS=.6V, IOUT=mA, f=khz - - db db 5/

6 XC66 Series ELECTRICAL CHARACTERISTICS (Continued) Ta=5 NOMINAL OUTPUT VOLTAGE (V) 6/ PARAMETER SYNBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Temperature Characteristics VOUT/ Topr VOUT E- NOMINAL E- OUTPUT VOLTAGE (V) OUTPUT OUTPUT VOLTAGE (V) VOUT VOLTAGE (V) VOUT VOUT(T) MIN. MAX. VOUT(T) MIN. MAX VBIAS=VCE=.6V, VIN=VOUT(T)+.V, IOUT=mA, - Topr 85 Limit Current I LIM VOUT=VOUT(E).95, VBIAS=VCE=.6V, VIN=VOUT(T)+.V - ± - ppm/ 55 - ma VBIAS=VCE=.6V, VIN=VOUT(T)+.V, Short Current I SHORT VOUT=V ma Thermal Shutdown Detect Temperature TTSD Junction Temperature Thermal Shutdown Release Temperature TTSR Junction Temperature Hysteresis Width TTSD-TTSR CL Auto-Discharge VBIAS=.6V, VIN= VOUT(T)+.V, Rdischg Resistance VCE= VSS, VOUT=VOUT(T) 9 6 Ω CE "H" Level Voltage VCEH VBIAS=.6V, VIN= VOUT(T)+.V V CE "L" Level Voltage VCEL VBIAS=.6V, VIN= VOUT(T)+.V V CE "H" Level Current (A Series) CE "H" Level Current (B Series) CE "L" Level Current ICEH ICEL VBIAS=VCE=6.V, VIN=VOUT(T)+.V VBIAS=6.V, VCE=VSS VIN=VOUT(T)+.V Soft-Start Time (*) t SS V BIAS =.6V, V IN =V OUT(T) +.V, I OUT =ma V CE =V.6V OUTPUT VOLTAGE CHART μa μa - μs NOTE: * : Please use Bias voltage V BIAS within the range V BIAS V OUT(E) (*).V * : Please use Input voltage V IN within the range V IN V BIAS * : VOUT(E) = Effective output voltage (Refer to the voltage chart E- and E-) * : VOUT (T) = Specified output voltage * 5: E- = Please refer to the table named OUTPUT VOLTAGE CHART * 6: E- = Please refer to the table named DROPOUT VOLTAGE CHART * 7: Vdif = {VIN (*8) -VOUT (*9) }. * 8: VIN = The input voltage when VOUT appears as input voltage is gradually decreased. * 9: VOUT = A voltage equal to 98% of the output voltage while maintaining an amply stabilized output voltage when V IN =V BIAS at V BIAS <.V, and V IN =.V at V BIAS.V is input to the V IN pin. * : IBIASMAX = A supply current at the V BIAS pin providing for the output current (I OUT ). * : t SS is defined as a time V OUT reaches V OUT(E) x.9v from the time when CE H threshold.75v is input to the CE pin.

7 XC66 Series DROPOUT VOLTAGE CHART NOMINAL OUTPUT VOLTAGE (V) VOUT(T) E- DROPOUT VOLTAGE (mv) Vdif VBIAS=. (V) VBIAS=. (V) VBIAS=.6 (V) VBIAS=. (V) VBIAS=5. (V) Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. Vgs (*) *): Vgs is a Gate Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T). 7/

8 XC66 Series DROPOUT VOLTAGE CHART (Continued) NOMINAL OUTPUT VOLTAGE (V) V OUT (T) E- DROPOUT VOLTAGE (mv) Vdif V BIAS =.(V) V BIAS =.(V) V BIAS =.6(V) V BIAS =.(V) V BIAS =5.(V) (*) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX *): Vgs is a Gate Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T) /

9 XC66 Series DROPOUT VOLTAGE CHART (Continued) NOMINAL OUTPUT VOLTAGE (V) V OUT (T) E- DROPOUT VOLTAGE (mv) Vdif V BIAS =.(V) V BIAS =.(V) V BIAS =.6(V) V BIAS =.(V) V BIAS =5.(V) (*) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX *): Vgs is a Gate Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T) /

10 XC66 Series DROPOUT VOLTAGE CHART (Continued) NOMINAL OUTPUT VOLTAGE (V) V OUT (T) E- DROPOUT VOLTAGE (mv) Vdif V BIAS =.(V) V BIAS =.(V) V BIAS =.6(V) V BIAS =.(V) V BIAS =5.(V) (*) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX *): Vgs is a Gate Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T). /

11 XC66 Series OPERATIONAL EXPLANATION <Voltage Regulator> The voltage divided by resistors R & R is compared with the internal reference voltage by the error amplifier. The N-channel MOSFET which is connected to the VOUT pin is then driven by the subsequent output signal. The output voltage at the VOUT pin is controlled & stabilized by a system of negative feedback. V BIAS pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. When output current increase, the V BIAS pin supplies output current also. VIN pin is connected to a driver transistor and provides output current. In order to obtain high efficient output current through low on-resistance, please take enough Vgs (=V BIAS V OUT(T) ) of the driver transistor. Output current triggers operation of constant current limiter and fold-back circuit, heat generation triggers operation of thermal shutdown circuit, the driver transistor circuit is forced OFF when V BIAS or V IN voltage goes lower than UVLO voltage. Further, the IC's internal circuitry can be shutdown via the CE pin's signal. Figure: XC66A series <Low ESR Capacitor> With the XC66 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation circuit is built-in. The output capacitor (C L) should be connected as close to VOUT pin and V SS pin to obtain stable phase compensation. Values required for the phase compensation are as the table below. For a stable power input, please connect an bias capacitor (C BIAS ) of.μf between the V BIAS pin and the VSS pin. Also, please connect an input capacitor (CIN) of.μf between the VIN pin and the VSS pin. In order to ensure the stable phase compensation while avoiding run-out of values, please use the capacitor (C BIAS, C IN, C L ) which does not depend on bias or temperature too much. The table below shows recommended values of C BIAS, C IN, C L. BIAS CAPACITOR INPUT CAPACITOR OUTPUT CAPACITOR SETTING VOLTAGE C BIAS CIN CL.7V~.8V CBIAS=.μF CIN=.μF CL=.7μF Recommended Values of C BIAS, C IN, C L /

12 XC66 Series OPERATIONAL EXPLANATION (Continued) <Soft-Start Function> With the XC66, the inrush current from VIN to V OUT for charging C L at start-up can be reduced and makes the VIN stable. The soft-start time is optimized to μs (TYP.) at V OUT =.V internally. Soft-start time is defined as the V OUT reaches 9% of V OUT(E) from the time when CE H threshold.75v is input to the CE pin. Inrush Current I RUSH (ma) XC66x C IN =C BIAS =.μf (ceramic) V IN =.5V,V BIAS =.6V,I OUT =ma,tr=5.μs,ta= C L =.7μF (ceramic) 5 CE Input Voltage C L =μf (ceramic) - Inrush Current - 5 Time (μs) - - CE Input Voltage V CE (V) Figure: Example of the inrush current wave form at IC start-up. Figure: Timing chart at IC start-up <CL High Speed Auto-Discharge> XC66 series can quickly discharge the electric charge at the output capacitor (CL) when a low signal to the EN pin which enables a whole IC circuit put into OFF state, is inputted via the N-channel transistor located between the VOUT pin and the VSS pin. When the IC is disabled, electric charge at the output capacitor (CL) is quickly discharged so that it could avoids malfunction. At that time, CL discharge resistance is depended on a bias voltage. Discharge time of the output capacitor (CL) is set by the CL auto-discharge resistance (R) and the output capacitor (CL). By setting time constant of a CL auto-discharge resistance value [R] and an output capacitor value (CL) as τ(τ=c x R), the output voltage after discharge via the N channel transistor is calculated by the following formulas. V = VOUT x e t/τ, or t=τln( VOUT(E) / V ) V : Output voltage after discharge, VOUT(E) : Output voltage, t: Discharge time, τ: CL auto-discharge resistance R Output capacitor (CL) value C <Current Limit, Short-Circuit Protection> The XC66 series fold-back circuit operates as an output current limiter and a short protection of the output pin. When the load current reaches the current limit level, the fixed current limiter circuit operates and output voltage drops. When the output pin is shorted to the V SS level, current flows about 8mA. <Thermal Shutdown Circuit (TSD) > When the junction temperature of the built-in driver transistor reaches the temperature limit level (5 TYP.), the thermal shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown function is released and the IC s operation is automatically restored because the junction temperature drops to the level of the thermal shutdown release temperature (5 TYP.). /

13 XC66 Series OPERATIONAL EXPLANATION (Continued) <Under Voltage Lock Out (UVLO) > When the V BIAS pin voltage drops below.v (TYP.) or V IN pin voltage drops below.v (TYP.), the output driver transistor is forced OFF by UVLO function to prevent false output caused by unstable operation of the internal circuitry. When the V BIAS pin voltage rise at.v (TYP.) or the V IN pin voltage rises at.v (TYP.), the UVLO function is released. The driver transistor is turned in the ON state and start to operate voltage regulation. <CE Pin> The IC internal circuitry can be shutdown via the signal from the CE pin with the XC66 series. In shutdown mode, output at the V OUT pin will be pulled down to the V SS level via R & R. However, as for the XC66 series, the CL auto-discharge resistor is connected in parallel to R and R while the power supply is applied to the V IN pin. Therefore, time until the V OUT pin reaches the V SS level becomes short. The CE pin of XC66A has pull-down circuitry so that CE input current increase during IC operation. The CE pin of XC66B does not have pull-down circuitry so that logic is not fixed when the CE pin is open. If the CE pin voltage is taken from V BIAS pin or V SS pin then logic is fixed and the IC will operate normally. However, supply current may increase as a result of through current in the IC's internal circuitry when medium voltage is input. NOTE ON USE. Please use this IC within the stated absolute maximum ratings. The IC is liable to malfunction should the ratings be exceeded.. Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output current. Please keep the resistance low between V BIAS and V SS wiring or V IN and V SS wiring in particular.. Please wire the bias capacitor (C BIAS ), input capacitor (C IN ) and the output capacitor (C L) as close to the IC as possible.. Capacitance values of these capacitors (CBIAS, CIN, CL) are decreased by the influences of bias voltage and ambient temperature. Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR influence. 5. In case of the output capacitor more than C L=μF is used, ringing of input current occurs when rising time. 6. V IN and CE should be applied at least μs after the bias voltage V BIAS reaches the requested voltage. If V IN and CE are applied within μs, inrush current like A may occurs. /

14 XC66 Series TEST CIRCUITS Circuit Circuit Circuit * For the timing chart, please refer to page <Soft-Start Function>. /

15 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS () vs. Output Current XC66B7MR XC66B7MR.8 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, V IN =.V.8 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, Ta=5 : VOUT(V).6.. Ta=- Ta=5 Ta=85 : VOUT(V).6.. VIN=.V VIN=.V VIN=.5V Output Current: I OUT (ma) Output Current: I OUT (ma) XC66BMR XC66BMR C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, V IN =.5V V BIAS =.6V, Ta=5.. : VOUT(V) Ta=- Ta=5 Ta=85 : VOUT(V) VIN=.V VIN=.5V VIN=.8V Output Current: I OUT (ma) Output Current: I OUT (ma) XC66B8MR XC66B8MR C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, V IN =.V C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, Ta=5 : VOUT(V) Ta=- Ta=5 Ta= Output Current: I OUT (ma) : VOUT(V) VIN=.9V VIN=.V VIN=.V Output Current: I OUT (ma) 5/

16 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) () vs. Bias Voltage XC66x7 XC66x7 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V IN =.V, Ta=5 V IN =.V, Ta=5.9.9 IOUT=mA IOUT=mA : VOUT(V) IOUT=mA IOUT=mA : VOUT(V) IOUT=mA IOUT=mA Bias Voltage: V BIAS (V) Bias Voltage: V BIAS (V). XC66x C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V IN =.5V, Ta=5. XC66x C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V IN =.5V, Ta=5 : VOUT(V)... IOUT=mA IOUT=mA IOUT=mA : VOUT(V)... IOUT=mA IOUT=mA IOUT=mA Bias Voltage: V BIAS (V) Bias Voltage: V BIAS (V) XC66x8 XC66x8 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V IN =.V, Ta=5 V IN =.V, Ta=5.. IOUT=mA IOUT=mA : VOUT(V) IOUT=mA IOUT=mA : VOUT(V) IOUT=mA IOUT=mA Bias Voltage: V BIAS (V) Bias Voltage: V BIAS (V) 6/

17 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) () vs. Input Voltage XC66x7 XC66x7 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, Ta=5 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, Ta=5.9.9 IOUT=mA IOUT=mA : VOUT(V) IOUT=mA IOUT=mA : VOUT(V) IOUT=mA IOUT=mA Bias Voltage: V BIAS (V) Bias Voltage: V BIAS (V) XC66x XC66x C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, Ta=5 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, Ta=5.. : VOUT(V)... IOUT=mA IOUT=mA IOUT=mA : VOUT(V)... IOUT=mA IOUT=mA IOUT=mA..... Bias Voltage: V BIAS (V) Bias Voltage: V BIAS (V) XC66x8 XC66x8 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, Ta=5 V BIAS =.6V, Ta=5.. : VOUT(V) IOUT=mA IOUT=mA IOUT=mA : VOUT(V) IOUT=mA IOUT=mA IOUT=mA Bias Voltage: V BIAS (V) Bias Voltage: V BIAS (V) 7/

18 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) ()Dropout Voltage vs. Output Current XC66BMR C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) Ta=5 XC66BMR (Vgs (*) =.V) C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V Dropout Voltage: Vdif(mV) VBIAS=.V VBIAS=.V VBIAS=.6V VBIAS=.V VBIAS=5.V Dropout Voltage: Vdif(mV) Ta=- Ta=5 Ta=85 Output Current: IOUT(mA) Output Current: I OUT (ma) XC66BMR (Vgs (*) =.8V) XC66BMR (Vgs (*) =.V) C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.V V BIAS =.V Dropout Voltage: Vdif(mV) Ta=- Ta=5 Ta=85 Dropout Voltage: Vdif(mV) Ta=- Ta=5 Ta=85 Output Current: I OUT (ma) Output Current: I OUT (ma) XC66BMR (Vgs (*) =.V) XC66BMR (Vgs (*) =.8V) C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.V C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =5.V Dropout Voltage: Vdif(mV) Ta=- Ta=5 Ta=85 Dropout Voltage: Vdif(mV) Ta=- Ta=5 Ta=85 Output Current: I OUT (ma) Output Current: I OUT (ma) *): Vgs is a Gate Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T). A value of the dropout voltage is determined by the value of the Vgs. 8/

19 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (5) Supply Bias Current vs. Bias Voltage (6) Supply Input Current vs. Input Voltage Supply Bias Current: IBIAS(μA) XC66x7 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V IN =.V Ta=- Ta=5 Ta= Supply Input Current: IIN(μA) XC66x7 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V Ta=- Ta=5 Ta= Bias Voltage: V BIAS (V) Input Voltage: V IN (V) XC66x C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V IN =.5V XC66x C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V Supply Bias Current: IBIAS(μA) Ta=- Ta=5 Ta= Supply Input Current: IIN(μA) Ta=- Ta=5 Ta= Bias Voltage: V BIAS (V) Input Voltage: V IN (V) Supply Bias Current: IBIAS(μA) XC66x8 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V IN =.V Ta=- Ta=5 Ta= Supply Input Current: IIN(μA) XC66x8 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V Ta=- Ta=5 Ta= Bias Voltage: V BIAS (V) Input Voltage: V IN (V) 9/

20 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (7) vs. Ambient Temperature (8) Supply Bias Current vs. Ambient Temperature XC66x7 XC66x7 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, V IN =.V V BIAS =.6V, V IN =.V : VOUT(V) IOUT=mA.68 IOUT=mA IOUT=mA Supply Bias Current: IBIAS(μA) Ambient Temperature: Ta( ) Ambient Temperature: Ta( ) XC66x XC66x C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, V IN =.5V C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, V IN =.5V : VOUT(V) IOUT=mA.8 IOUT=mA IOUT=mA Supply Bias Current: IBIAS(μA) Ambient Temperature: Ta( ) Ambient Temperature: Ta( ) XC66x8.8 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, V IN =.V XC66x8 C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, V IN =.V : VOUT(V) IOUT=mA.78 IOUT=mA IOUT=mA Ambient Temperature: Ta( ) Supply Bias Current: IBIAS(μA) Ambient Temperature: Ta( ) /

21 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (9) Supply Input Current vs. Ambient Temperature XC66x7 Supply Input Current: IIN(μA) C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, V IN =.V Ambient Temperature: Ta( ) XC66x C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, V IN =.5V Supply Input Current: IIN(μA) Ambient Temperature: Ta( ) XC66x8 Supply Input Current: IIN(μA) C IN =C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, V IN =.V Ambient Temperature: Ta( ) /

22 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) () Bias Transient Response. XC66x7 C IN=.μF(ceramic), C BIAS=μF(ceramic), C L=.7μF(ceramic) V IN=.V, I OUT=mA, tr=tf=5.μsec, Ta=5 5. XC66x7 C IN=.μF(ceramic), C BIAS=μF(ceramic), C L=.7μF(ceramic) V IN=.V, I OUT=mA, tr=tf=5.μsec, Ta=5 5 Bias Voltage Bias Voltage.. VOUT(V) Bias Voltage V BIAS(V) VOUT(V) Bias Voltage V BIAS(V) Time (usec/div) Time (μs / div) Time (usec/div) Time (μs / div).6 XC66x C IN=.μF(ceramic), C BIAS=μF(ceramic), C L=.7μF(ceramic) V IN=.5V, I OUT=mA, tr=tf=5.μsec, Ta=5 5.6 XC66x C IN=.μF(ceramic), C BIAS=μF(ceramic), C L=.7μF(ceramic) V IN=.5V, I OUT=mA, tr=tf=5.μsec, Ta=5 5 Bias Voltage Bias Voltage.5.5 VOUT(V)... Bias Voltage V BIAS(V) VOUT(V)... Bias Voltage V BIAS(V) Time (usec/div) Time (μs / div) Time (usec/div) Time (μs / div). XC66x8 C IN=.μF(ceramic), C BIAS=μF(ceramic), C L=.7μF(ceramic) V IN=.V, I OUT=mA, tr=tf=5.μsec, Ta=5 5. XC66x8 C IN=.μF(ceramic), C BIAS=μF(ceramic), C L=.7μF(ceramic) V IN=.V, I OUT=mA, tr=tf=5.μsec, Ta=5 5 Bias Voltage Bias Voltage.. VOUT(V)..9.8 Bias Voltage V BIAS(V) VOUT(V) Bias Voltage V BIAS(V) Time (usec/div) Time (μs / div) Time (usec/div) Time (μs / div) /

23 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) () Input Transient Response. XC66x7 C IN =.μf(ceramic), C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, I OUT =ma, tr=tf=5.μsec, Ta=5. XC66x7 C IN =.μf(ceramic), C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, I OUT =ma, tr=tf=5.μsec, Ta=5 Input Voltage Input Voltage.. VOUT(V) Input Voltage VIN(V) VOUT(V) Input Voltage VIN(V) Time (usec/div) Time (μs / div) Time (usec/div) Time (μs / div).6 XC66x C IN =.μf(ceramic), C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, I OUT =ma, tr=tf=5.μsec, Ta=5.6 XC66x C IN =.μf(ceramic), C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, I OUT =ma, tr=tf=5.μsec, Ta=5 Input Voltage Input Voltage.5.5 VOUT(V)... Input Voltage VIN(V) VROUT(V)... Input Voltage VIN(V) Time (usec/div) Time (μs / div) Time ( usec/div) Time (μs / div). XC66x8 C IN =.μf(ceramic), C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, I OUT =ma, tr=tf=5.μsec, Ta=5 5. XC66x8 C IN =.μf(ceramic), C BIAS =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V, I OUT =ma, tr=tf=5.μsec, Ta=5 5 Input Voltage Input Voltage.. VOUT(V)..9.8 Input Voltage VIN(V) VOUT(V)..9.8 Input Voltage VIN(V) Time (usec/div) Time (μs / div) Time (usec/div) Time (μs / div) /

24 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) () Load Transient Response.9 XC66B7MR C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, V IN=.V, tr=tf=5.μsec, Ta=5 5.9 XC66B7MR C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, V IN=.V, tr=tf=5.μsec, Ta= V OUT(V).5. Output Current Output Current IOUT(mA) VOUT(V).5. Output Current ma Output Current IOUT(mA). ma. ma ma -. Time (5usec/div) Time (5μs / div) -. Time (5usec/div) Time (5μs / div). XC66BMR C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, V IN=.5V, tr=tf=5.μsec, Ta=5 5. XC66BMR C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, V IN=.5V, tr=tf=5.μsec, Ta=5 5.. V OUT(V)..8 Output Current Output Current IOUT(mA) VOUT(V)..8 Output Current ma Output Current IOUT(mA).6 ma.6. Time Time (5μs (5usec/div) / ma. Time (5usec/div) Time (5μs / div) ma. XC66B8MR C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, V IN=.V, tr=tf=5.μsec, Ta=5 5. XC66B8MR C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, V IN=.V, tr=tf=5.μsec, Ta= V OUT(V).6. Output Current Output Current IOUT(mA) VOUT(V).6. Output Current ma Output Current IOUT(mA). ma. ma ma.. Time (5usec/div) Time (5μs / div) Time (5usec/div) Time (5μs / div) /

25 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) () CE Rising Response Time. XC66x7 C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V IN=.V, V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5. XC66x7 C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V IN=.V, V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5.5.5 CE Input Voltage CE Input Voltage V OUT(V)..5. CE Input Voltage V CE(V) V OUT(V)..5. CE Input Voltage V CE(V) Time (usec/div) Time (μs / div) Time (usec/div) Time (μs / div). XC66x C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V IN=.5V, V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5. XC66x C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V IN=.5V, V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5.5.5 CE Input Voltage CE Input Voltage V OUT(V)..5. CE Input Voltage V CE(V) V OUT(V)..5. CE Input Voltage V CE(V) Time (usec/div) Time (μs / div) Time (usec/div) Time (μs / div). XC66x8 C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V IN=.V, V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5. XC66x8 C IN=C BIAS=.μF(ceramic), C L=.7μF(ceramic) V IN=.V, V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5.5 CE Input Voltage.5 CE Input Voltage V OUT(V)..5. CE Input Voltage V CE(V) V OUT(V)..5. CE Input Voltage V CE(V) Time (usec/div) Time (μs / div) Time (usec/div) Time (μs / div) 5/

26 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) () V IN Rising Response Time.5 XC66x7 C IN=.μF(ceramic), C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5.5 XC66x7 C IN=.μF(ceramic), C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5. Input Voltage. Input Voltage V OUT(V).5. Input Voltage V IN(V) V OUT(V).5. Input Voltage V IN(V) Time (usec/div) Time (μs / div) Time (usec/div) Time (μs / div).5 XC66x C IN=.μF(ceramic), C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5.5 XC66x C IN=.μF(ceramic), C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5. Input Voltage. Input Voltage V OUT(V).5. Input Voltage V IN(V) V OUT(V).5. Input Voltage V IN(V) Time (usec/div) Time (μs / div) Time (usec/div) Time (μs / div).5 XC66x8 C IN=.μF(ceramic), C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5.5 XC66x8 C IN=.μF(ceramic), C BIAS=.μF(ceramic), C L=.7μF(ceramic) V BIAS=.6V, I OUT=mA, tr=tf=5.μsec, Ta=5 Input Voltage Input Voltage.. V OUT(V).5. Input Voltage V IN(V) V OUT(V).5. Input Voltage V IN(V) Time (usec/div) Time (μs / div) Time (usec/div) Time (μs / div) 6/

27 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (5) Bias Voltage Ripple Rejection Rate (6) Input Voltage Ripple Rejection Rate XC66x7 XC66x7 VBIAS_PSRR(dB) C BIAS =μf, C IN =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V DC +.Vp-p AC, V IN =.V, I OUT =ma, Ta= Frequency (khz) VIN_PSRR(dB) C BIAS =.μf(ceramic), C IN =μf, C L =.7μF(ceramic) V BIAS =.6V, V IN =.V DC +.Vp-p AC, IOUT=mA, Ta= Frequency (khz) XC66x XC66x VBIAS_PSRR(dB) C BIAS =μf, C IN =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V DC +.Vp-p AC, V IN =.5V, I OUT =ma, Ta= Frequency (khz) VIN_PSRR(dB) C BIAS =.μf(ceramic), C IN =μf, C L =.7μF(ceramic) V BIAS =.6V, V IN =.5V DC +.Vp-p AC, IOUT=mA, Ta=5.. Frequency (khz) VBIAS_PSRR(dB) XC66x8 C BIAS =μf, C IN =.μf(ceramic), C L =.7μF(ceramic) V BIAS =.6V DC +.Vp-p AC, V IN =.V, I OUT =ma, Ta= Frequency (khz) VIN_PSRR(dB) XC66x8 C BIAS =.μf(ceramic), C IN =μf, C L =.7μF(ceramic) V BIAS =.6V, V IN =.V DC +.Vp-p AC, IOUT=mA, Ta=5.. Frequency (khz) 7/

28 XC66 Series PACKAGING INFORMATION USP-6C (UNIT : mm) USP-6C Reference Pattern Layout < USP-6C 推奨マウントパッド寸法 ( 参照 ) > USP-6C < 推奨メタルマスクデザイン Reference Metal Mask ( 参照 ) Design > SOT-5 (UNIT : mm) SOT-89-5 (UNIT : mm).8 Thickness はんだ厚 of solder :μm paste: μm ( 参考 ) (reference).±.. MAX. MIN ±. *The side of pins are not gilded, but nickel is used: Sn 5~5μm 8/

29 XC66 Series PACKAGING INFORMATION (Continued) USP-6C Power Dissipation Power dissipation data for the USP-6C is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition.. Measurement Condition (Reference data) Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Material: Dimensions x mm (6 mm in one side) Copper (Cu) traces occupy 5% of the board area In top and back faces Package heat-sink is tied to the copper traces Glass Epoxy (FR-) Thickness:.6 mm Through-hole: x.8 Diameter て. Power Dissipation vs. Ambient Temperature Board Mount (Tj max = 5 ) Evaluation Board (Unit: mm) Ambient Temperature( ) Power Dissipation Pd(mW) Thermal Resistance ( /W) Power Dissipation Pd (mw) 許容損失 Pd(mW) Pd-Ta 特性グラフ Pd vs. Ta Ambient 周辺温度 Temperature Ta( ) ( ) 9/

30 XC66 Series PACKAGING INFORMATION (Continued) SOT-5 Power Dissipation Power dissipation data for the SOT-5 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition.. Measurement Condition (Reference data) Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Material: Dimensions x mm (6 mm in one side) Copper (Cu) traces occupy 5% of the board area In top and back faces Package heat-sink is tied to the copper traces (Board of SOT-6 is used.) Glass Epoxy (FR-) Thickness:.6 mm Through-hole: x.8 Diameter 評価基板レイアウト ( 単位 :mm). Power Dissipation vs. Ambient Temperature Evaluation Board (Unit: mm) Board Mount (Tj max = 5 ) Ambient Temperature( ) Power Dissipation Pd(mW) Thermal Resistance ( /W) Power Dissipation Pd (mw) 許容損失 Pd(mW) Pd-Ta 特性グラフ Pd vs. Ta Ambient 周辺温度 Temperature Ta( ) ( ) /

31 XC66 Series PACKAGING INFORMATION (Continued) SOT-89-5 Power Dissipation Power dissipation data for the SOT-89-5 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition.. Measurement Condition (Reference data) Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Material: Dimensions x mm (6 mm in one side) Copper (Cu) traces occupy 5% of the board area In top and back faces Package heat-sink is tied to the copper traces Glass Epoxy (FR-) Thickness:.6 mm Through-hole: 5 x.8 Diameter て. Power Dissipation vs. Ambient Temperature Evaluation Board (Unit: mm) Board Mount (Tj max = 5 ) Ambient Temperature( ) Power Dissipation Pd(mW) Thermal Resistance ( /W) Power Dissipation Pd (mw) 許容損失 Pd(mW) Pd-Ta 特性グラフ Pd vs. Ta Ambient 周辺温度 Temperature Ta( ) ( ) /

32 XC66 Series MARKING RULE SOT5, 89-5, USP6C SOT5 5 represents product series MARK PRODUCT SERIES 9 XC66****** SOT represents type of regulators MARK OUTPUT VOLTAGE RANGE A B XC66A***** XC66B***** 5 5 USP6C 5 represents output voltage MARK OUTPUT VOLTAGE (V) MARK OUTPUT VOLTAGE (V).7 F.5.75 H.5.8 K L.6.9 M N.7 6. P R.8 8. S T - A. U - B.5 V - C. X - D.5 Y - E. Z -,5 represents production lot number ~9 A~Z 9Z A~A9 AA Z9 ZA~ZZ repeated (G,I,J,O,Q,W excluded) *No character inversion used. /

33 XC66 Series. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date.. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet.. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. /