XC6901 Series APPLICATIONS TYPICAL PERFORMANCE CHARACTERISTICS TYPICAL APPLICATION CIRCUIT. 200mA Negative Voltage Regulator with ON/OFF Control 1/28

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1 ETR mA Negative Voltage Regulator with ON/OFF Control GENERAL DESCRIPTION The is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator. The CE function enables the circuit to be in stand-by mode by inputting low level signal. In the stand-by mode, the electric charge at the output capacitor (C L ) will be discharged via the internal auto-discharge switch and as a result the -V OUT pin quickly returns to the V SS level. The over current protection circuit will operate when the output current reaches limit current. The thermal shutdown circuit will operate when the junction temperature reaches limit temperature. APPLICATIONS CCD power supplies LCD Modules Op-Amp power supplies Digital still cameras Battery powered equipment FEATURES Maximum Output Current : 2mA Input Voltage Range : -2.4V ~-12.4V(V CE =3.6V) Range : -.9V~-12.V Accuracy : ±1.5%(V OUT < 2.V) ±.3V(V OUT 2.V) Temperature Stability : TYP. ±5ppm/ CE High Level Voltage : +1.2V~+3.6V,(Active High) Dropout Voltage : 4mV@I OUT =1mA Low Power Consumption : 1μA MAX. Stand-by Current : Less than.1μa Protection Circuits : Current Limit 35mA TYP, Foldback Overheat Protection T TSB =15 Output Capacitor : Ceramic Capacitor Compatible Built-in Function : C L High-Speed Discharge Operating Ambient Temperature : -4 ~+85 Packages : SOT-25, SOT-89-5, USP-6C Environmentally Friendly : EU RoHS Compliant, Pb Free TYPICAL APPLICATION CIRCUIT C IN :1. μf (ceramic) -V IN CE GND SOT -25 ( TOP VIEW ) NC CL:1.μF (ceramic) -V OUT TYPICAL PERFORMANCE CHARACTERISTICS XC691x51 I OUT =1 1mA,tr=tf=5μs,,V CE=1.5V V IN=-6V,C IN=1μF(ceramic),C L=1μF(ceramic) Output Current Time(1μs/div) 1mA 1mA Output Current: IOUT [ma] 1/28

2 PIN CONFIGURATION * The dissipation pad for the USP-6C package should be solder-plated in recommended mount pattern and metal masking to enhance mounting strength and heat release. If the pad needs to be connected to other pins, it should be connected to the -V IN (No. 3) pin. PIN ASSIGNMENT PIN NUMBER PIN NAME FUNCTIONS USP-6C SOT-25 SOT V OUT Negative Output 2,5 4 1 NC No Connection V IN Negative Supply Input CE ON/OFF Control GND Ground FUNCTION CHART D type PIN NAME SIGNAL STATUS L Stand-by CE H Active OPEN Stand-by 2/28

3 XC691 Series PRODUCT CLASSIFICATION Ordering Information XC (*1) ON/OFF Control Voltage Regulator (CE Active High) DESIGNATOR ITEM SYMBOL DESCRIPTION 1 Type (*2) D 23 9~C Output Type Packages (Order Unit) 1 B ER-G MR-G PR-G CE Pull-down resistor C L Auto-discharge -.9V~-12V e.g. -.9V 2=, 3=9, -12V 2=C, 3= A:1, B:11, C:12.1V Increments e.g. -1.2V 2=1, 3=2, 4=1.5V Increments for -.95V~-4.95V e.g V 2=1, 3=2, 4=B USP-6C(3,/Reel) SOT-25(3,/Reel) SOT-89-5 (1,/Reel) (*1) The -G suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. (*2) For the type without C L auto-discharge, please contact your local Torex sales office or representative. STANDARD VOLTAGE Examples for standard voltage V OUT PACKAGES (V) USP-6C SOT-25 SOT V XC691D121ER-G XC691D121MR-G XC691D121PR-G -2.5V XC691D251ER-G XC691D251MR-G XC691D251PR-G -2.6V XC691D261ER-G XC691D261MR-G XC691D261PR-G -3.V XC691D31ER-G XC691D31MR-G XC691D31PR-G -3.3V XC691D331ER-G XC691D331MR-G XC691D331PR-G -4.V XC691D41ER-G XC691D41MR-G XC691D41PR-G -4.5V XC691D451ER-G XC691D451MR-G XC691D451PR-G -5.V XC691D51ER-G XC691D51MR-G XC691D51PR-G -6.V XC691D61ER-G XC691D61MR-G XC691D61PR-G -12.V XC691DC1ER-G XC691DC1MR-G XC691DC1PR-G 3/28

4 ABSOLUTE MAXIMUM RATINGS GND=V, PARAMETER SYMBOL RATINGS UNITS Input Voltage V IN GND-18+V CE ~ GND+.3 V Output Current I OUT 5 (*1) ma V OUT -V IN -.3 ~ GND+.3 V CE Input Voltage V CE GND-.3 ~ V IN +18 V USP-6C 12 1 (PCB mounted) (*2) Power 25 SOT-25 Pd Dissipation 6 (PCB mounted) (*2) mw SOT (PCB mounted) (*2) Operating Ambient Temperature Topr -4~+85 Storage Temperature Tstg -55~+125 (*1): Please use within the range of I OUT Pd/( V OUT - V IN ) (*2) The power dissipation figure shown is PCB mounted and is for reference only. Please refer to page 24~26 for details. 4/28

5 XC691 Series BLOCK DIAGRAM D type *Diodes inside the circuit are an ESD protection diode and a parasitic diode. 5/28

6 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT V OUT(E) (*2) Maximum Output Current (*4) Load Regulation I OUTMAX ΔV OUT I OUT =2mA V IN =V OUT(T) -2.V V IN =-4.4V V IN =V OUT(T) -1.V V OUT(T) <-2.V V OUT(T) -2.V -.3 V OUT(T) -2.4V V OUT(T) >-2.4V V OUT(T) -3.V V IN =-4.V V OUT(T) >-3.V 1mA I OUT 1mA V OUT(T) (*1) ma 1 V mv 1 Dropout Voltage Vdif (*3) I OUT =2mA - E-1 (*5) mv 1 Supply Current I BIAS V IN =-14.5V, V CE =1.5V, I OUT =ma μa 1 Stand-by Current I STB V IN =-14.5V, V CE =V, I OUT =ma μa V~V OUT(T) -1V V OUT(T) -1.4V Input Line ΔV OUT / -14.5V~-2.4V V OUT(T) >-1.4V %/V 1 Regulation (ΔV IN V OUT ) I OUT =2mA Input Voltage V IN -16+V CE V 1 ΔV OUT / I OUT =2mA Temperature - ±5 - ppm/ 1 Characteristics (ΔTopr V OUT ) -4 Topr 85 Power Supply Rejection Ratio PSRR V IN ={V OUT(T) -1.}+.5Vp-pAC, I OUT =2mA, f=1khz GND=V, db 2 Limit Current I LIM V IN =V OUT(T) -2.V V IN =-4.4V V OUT(T) -2.4V V OUT(T) >-2.4V ma 1 Short-Circuit Current I SHORT V IN =V OUT(T) -2.V Short -V OUT to GND level ma 1 Detect Thermal Shutdown Temperature Release Thermal Shutdown Temperature T TSD IC Junction temperature T TSR IC Junction temperature Hysteresis Width T HYS T TSD -T TSR CE "H" Level Voltage V CEH V 1 CE "L" Level Voltage V CEL GND -.4 V 1 CE "H" Level Current I CEH V IN =-12.4V, V CE =3.6V XC691D Series μa 1 CE "L" Level Current I CEL V CE =GND μa 1 C L Discharge Resistor R DCHG V IN =-8V,V OUT =-2V,V CE =GND kω 1 Soft Start Time t SS R L =3kΩ,Rise Time CE="H" to 95% of V OUT(E) V OUT(T) >-4.V ms 3 V OUT(T) -4.V ms 3 NOTE: Unless otherwise stated regarding input voltage conditions V CE =1.5V GND=V V IN =V OUT(T) -1.V or -2.4V the one which bigger absolute value. *1) V OUT(T) : Nominal output voltage *2) V OUT(E) : Effective output voltage (see the voltage chart) (ie. The output voltage when V OUT(T) -1.V or -2.4V is provided at the V IN pin while maintaining a certain I OUT value. *3)Vdif=-{V IN1 - V OUT1 } V IN1 is the input voltage when V OUT1 appears at the V OUT pin while input voltage is gradually increased V OUT1 is the voltage equal to 98% of the normal output voltage when amply stabilized V OUT (T) -1.V or -2.4V (the bigger absolute value one ) are input at the V IN pin. *4) The maximum current may not be able to flow when thermal shutdown operates, it depends on power dissipation. *5) E-1: Refer to dropout voltage chart. 6/28

7 XC691 Series ELECTRICAL CHARACTERISTICS(Continued) Dropout Voltage Chart (V OUT(T) =-.9V~-5V) NOMINAL OUTPUT VOLTAGE E-1 NOMINAL E-1 NOMINAL E-1 DROPOUT VOLTAGE OUTPUT DROPOUT VOLTAGE OUTPUT DROPOUT VOLTAGE Vdif (mv) VOLTAGE Vdif (mv) VOLTAGE Vdif (mv) V OUT(T) TYP. MAX. V OUT(T) TYP. MAX. V OUT(T) TYP. MAX /28

8 ELECTRICAL CHARACTERISTICS(Continued) Dropout Voltage Chart (V OUT(T) =-5.1V~-12V) NOMINAL OUTPUT VOLTAGE E-1 NOMINAL E-1 DROPOUT VOLTAGE OUTPUT DROPOUT VOLTAGE Vdif(mV) VOLTAGE Vdif(mV) V OUT(T) TYP. MAX. V OUT(T) TYP. MAX /28

9 XC691 Series TEST CIRCUITS 1) CIRCUIT1 V CE SW1 A V -V IN V CIN=1μF(ceramic) CE GND CL=1μF (ceramic) V I OUT A V OUT1 -V OUT SW2 -V IN A 2) CIRCUIT2 3) CIRCUIT3 9/28

10 OPERATIONAL EXPLANATION The voltage divided by resisters R1 and R2 is compared with the internal reference voltage based on ground by the error amplifier. The driver transistor tied to the V IN pin is then driven by the subsequent output signal. The output voltage at the V OUT pin is controlled and stabilized by a system of negative feedback. <Soft Start Function> includes soft-start circuit. During power start-up, the inrush current from -V IN pin to V OUT pin to charge C L capacitor can be reduced and it makes the V IN stable. Soft-start time (t SS ) is optimized internally. Figure1:Soft Start Time and Inrush Current <Current Limit, Short-Circuit Protection> The XC691 series fold-back circuit operates as an output current limiter and a short protection circuit for the output pin. When the output current reaches the current limit level, output voltage drops with the decrease of the output current. There are no parasitic diode between the V OUT pin and GND pin. The minimized short-circuit current is maintained even if the V OUT pin voltage is pulled up toward positive. <Thermal Shutdown> The has an internal thermal Shutdown(TSD) circuit for protection against overheating. When the junction temperature reaches the detection temperature, the driver transistor is forcibly turned off. When the junction temperature falls to the release temperature with the driver transistor still in the off state, the driver transistor turns on (automatic recovery) and restarts regulator operation. <CE Pin> The is able to shut down the regulator circuit using the CE pin signal. CE pin can be controlled with positive voltage due to P-channel transistor source input (Gate is grounded). A current flow of a few micro amperes. The regulator is turned on when CE input voltage is positive, the regulator is turned off when CE input is GND. When CE pin is open, IC is turned OFF, due to the built-in Pull-down resistor. When the IC is turned OFF with low input voltage to the CE pin,-v OUT pin voltage goes into GND level by R1,R2 and CL discharge resistance(r DCHG ). 1/28

11 XC691 Series OPERATIONAL EXPLANATION(Continued) <C L High Speed Discharge> The XC691D type is capable of high-speed discharge of the charge that collects on the output capacitor (C L below). This is accomplished by the P-channel MOSFET and C L discharge resistance connected between the -V OUT and GND pins in the block diagram, and takes place when the L-level signal (IC internal circuit shutdown signal) of the CE pin is input so that it could avoids malfunction. The C L discharge time is determined by this C L discharge resistance and C L. Letting the time constant of the C L discharge resistance R DCHG and C L be τ (τ = C R), the output voltage after discharge by the P-channel MOSFET can be obtained from the CR discharge equation below. Please be noted that R DCHG various with supply voltage and V DS (drain-source voltage) since it consists of P-channel MOSFET. t = τln(v OUT(E) / V) V:Output voltage during discharge V OUT(E) :Output voltage t:discharge time τ:c L auto-discharge resistance R DCHG C L Output capacitor value C L <Low ESR Capacitor> With the XC691 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation circuit is built-in. The output capacitor (C L ) should be connected as close to -V OUT pin and GND pin to obtain stable phase compensation. Values required for the phase compensation are as the table below. For a stable power input, please connect an input capacitor (C IN ) near power supply. In order to ensure the stable phase compensation while avoiding run-out of values, please use the capacitor (C IN, C L ) which does not depend on bias or temperature too much. The table below shows recommended values of C IN, C L for all environment conditions. CHART 1:Recommended Values of C IN, C L (MIN.) OUTPUT VOLTAGE RANGE INPUT CAPACITOR OUTPUT CAPACITOR V OUT(T) C IN C L -.9V~-12V 1.μF~ 1.μF~1μF 11/28

12 NOTE ON USE 1) For temporary, transitional voltage drop or voltage rising phenomenon. The IC is liable to malfunction should the ratings be exceeded. 2) Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output current. Please enforce wiring V IN and GND. 3) Please wire the C IN and C L as close to the IC as possible. 4) Capacitances of these capacitors (C IN, C L ) are decreased by the influences of bias voltage and ambient temperature. Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR influence. 5) Torex places an importance on improving our products and its reliability. However, by any possibility, we would request user fail-safe design and post-aging treatment on system or equipment. 12/28

13 XC691 Series TYPICAL PERFORMANCE CHARACTERISTICS (1) vs. Output Current XC691x331 XC691x331 V IN = -5.3V,V CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic),v CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic) Ta= VIN=-4.3V VIN=-5.3V VIN=-6.3V Output Current: I OUT [ma] Output Current: I OUT [ma] XC691x51 V IN = -7.V,V CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic) Ta= XC691x51,V CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic) VIN=-6V VIN=-7V VIN=-8V Output Current: I OUT [ma] Output Current: I OUT [ma] XC691xC1 XC691xC1 V IN = -14V,V CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic),v CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic) Ta= VIN=-14V VIN=-14.5V Output Current: I OUT [ma] Output Current: I OUT [ma] 13/28

14 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (2) vs. Input Voltage. XC691x331 I OUT=2mA,V CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic). XC691x331,V CE =1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic) Ta= IOUT=1mA IOUT=2mA IOUT=5mA Input Voltage: V IN [V] Input Voltage: V IN [V] XC691x51 I OUT =2mA,V CE =1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic). XC691x51,V CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic) Ta= IOUT=1mA IOUT=2mA IOUT=1mA Input Voltage: V IN [V] Input Voltage: V IN [V] XC691xC1 I OUT=2mA,V CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic) Ta= XC691xC1,V CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic) IOUT=1mA IOUT=2mA IOUT=1mA Input Voltage: V IN [V] Input Voltage: V IN [V] /28

15 XC691 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (3) Dropout Voltage vs. Output Current Dropout Voltage: Vdif [mv] XC691x331 V CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic) 2 18 Ta= Dropout Voltage: Vdif [mv] XC691x51 V CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic) 2 18 Ta= Output Current: I OUT [ma] Output Current: I OUT [ma] Dropout Voltage: Vdif [mv] XC691xC1 V CE=1.5V C IN = 1.μF (ceramic), C L = 1.μF (ceramic) 2 18 Ta= Output Current: I OUT [ma] (4) Supply Current vs. Input Voltage XC691x331 XC691x51 V CE =1.5V Supply Current: ISS [μa] Ta=-4 Supply Current: ISS [μa] Ta= Input Voltage: V IN [V] Input Voltage: V IN [V] 15/28

16 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (4) Supply Current vs. Input Voltage (Continued) XC691xC1 Supply Current: ISS [μa] V CE =1.5V Ta= Input Voltage: V IN [V] (5) vs. Ambient Temperature XC691x331 XC691x V IN =-4.3V,I OUT=2mA,V CE=1.5V C IN =1μF(ceramic),C L =1μF(ceramic) V IN =-6.V,I OUT =2mA,V CE =1.5V C IN=1μF(ceramic),C L=1μF(ceramic) Ambient Temperature: Ta [ ] Ambient Temperature: Ta [ ] XC691xC V IN =-13V,I OUT =2mA,V CE =1.5V C IN=1μF(ceramic),C L=1μF(ceramic) Ambient Temperature: Ta [ ] 16/28

17 XC691 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (6) CE Pin Threshold Voltage vs Ambient Temperature CE Threshold Voltage: VCE [V] V IN =-14.5V.95 CE"H".9 CE"L" Ambient Temperature: Ta [ ] (7) CE Input Current vs CE Voltage CE Input Current: ICE [μa],type A/B (Without CE Pull-down) V IN =-12.4V Ta= CE Voltage: V CE [V] CE Input Current: ICE [μa],type C/D (With CE Pull-down) V IN =-12.4V Ta= CE Voltage: V CE [V] (8) CE Input Current vs Ambient Temperature CE Input Current: ICE [ua] A/B TYPE C/D TYPE Ambient Temperature: Ta [ ] V IN =-12.4V, V CE=3.6V 17/28

18 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (9) Input Rising Response Time XC691x331 V IN = -4.3V,tr=5μs, V CE=1.5V,I OUT=2mA,C L=1μF(ceramic) Input Voltage Time(2μs/div) Input Voltage: VIN [V] XC691x51 V IN= -6.V,tr=5μs, V CE =1.5V,I OUT =2mA,C L =1μF(ceramic) Input Voltage Time(2μs/div) Input Voltage: VIN [V] XC691xC1. V IN = -13V,tr=5μs, V CE=1.5V,I OUT=2mA,C L=1μF(ceramic) Input Voltage Input Voltage: VIN [V] -3. Time(2μs/div) -15. (1) CE Rising Response Time XC691x331 V IN =-4.3V,I OUT =2mA, V CE= 1.5V,tr=5μs,C L=1μF(ceramic) XC691x51 V IN =-6.V,I OUT =2mA, V CE= 1.5V,tr=5μs,C L=1μF(ceramic) CE Voltage: VCE [V] CE Voltage CE Voltage: VCE [V] CE Voltage -4. Time(2μs/div) -6. Time(2μs/div) 18/28

19 XC691 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (1) CE Rising Response Time (Continued) CE Voltage: VCE [V] XC691xC1 V IN =-13V,I OUT =2mA, V CE= 1.5V,tr=5μs,C L=1μF(ceramic) CE Voltage Time(2μs/div) (11) Input Transient Response Input Voltage XC691x331 V IN =-4.3V -5.3V,tr=tf=5μs,,V CE =1.5V I OUT=2mA,C L=1μF(ceramic) Time(1μs/div) Input Voltage: VIN [V] XC691x51 V IN =-6V -7V,tr=tf=5μs,,V CE =1.5V I OUT =2mA,C L =1μF(ceramic) Input Voltage Time(1μs/div) Input Voltage: VIN [V] XC691xC1 V IN =-13V -14V,tr=tf=5μs,,V CE =1.5V I OUT=2mA,C L=1μF(ceramic) Input Voltage Input Voltage: VIN [V] Time(1μs/div) /28

20 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (12) Load Transient Response XC691x331 XC691x51 I OUT =1 1mA,tr=tf=5μs,,V CE =1.5V I OUT =1 1mA,tr=tf=5μs,,V CE =1.5V V IN=-4.3V,C IN=1μF(ceramic),C L=1μF(ceramic) V IN=-6V,C IN=1μF(ceramic),C L=1μF(ceramic) Output Current 1mA 1mA Output Current: IOUT [ma] Output Current 1mA 1mA Output Current: IOUT [ma] Time(1μs/div) Time(1μs/div) XC691xC1 I OUT =1 1mA,tr=tf=5μs,,V CE =1.5V V IN=-13V,C IN=1μF(ceramic),C L=1μF(ceramic) Output Current 1mA 1mA Output Current: IOUT [ma] Time(2μs/div) (13) Ripple Rejection Rate XC691x331 XC691x51 7,V IN =-4.3V+.5V p- pac V CE=1.5V,C L=1μF(ceramic) 7,V IN =-6V+.5V p- pac V CE=1.5V,C L=1μF(ceramic) Ripple Rejection Rate: RR [db] Iout=1mA Iout=2mA Ripple Rejection Rate: RR [db] Iout=1mA Iout=2mA 1 1 1k 1k 1k 1 1 1k 1k 1k Ripple Frequency: f [Hz] Ripple Frequency: f [Hz] 2/28

21 XC691 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (13) Ripple Rejection Rate (Continued) XC691xC1 Ripple Rejection Rate: RR [db] Iout=1mA Iout=2mA,V IN =-13V+.5V p- pac V CE =1.5V,C L =1μF(ceramic) 1 1 1k 1k 1k Ripple Frequency: f [Hz] 21/28

22 PACKAGING INFORMATION USP-6C SOT-25 SOT ± ±.6.42±.6.42± Φ ±.6.47±.6.42± /28 1.5±.1 1.5±.1

23 XC691 Series PACKAGING INFORMATION (Continued) USP-6C Reference Pattern Layout USP-6C Reference Metal Mask Design SOT-25 Reference Pattern Layout SOT-89-5 Reference Pattern Layout /28

24 PACKAGING INFORMATION (Continued) SOT-25 Power Dissipation Power dissipation data for the SOT-25 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition. 1. Measurement Condition (Reference data) Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions 4 x 4 mm (16 mm 2 in one side) Copper (Cu) traces occupy 5% of the board area In top and back faces Package heat-sink is tied to the copper traces (Board of SOT-26 is used.) Material: Glass Epoxy (FR-4) Thickness: 1.6 mm Through-hole: 4 x.8 Diameter 2. Power Dissipation vs. Ambient temperature Evaluation Board (Unit: mm) Board Mount (Tj max = 125 ) Ambient Temperature( ) Power Dissipation Pd(mW) Thermal Resistance ( /W) Power Dissipation Pd (mw) 許容損失 Pd(mW) Pd-Ta 特性グラフ Pd vs. Ta Ambient 周辺温度 Temperature Ta( ) ( ) 24/28

25 XC691 Series PACKAGING INFORMATION (Continued) SOT-89-5 Power Dissipation Power dissipation data for the SOT-89-5 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition. 2. Measurement Condition (Reference data) Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions 4 x 4 mm (16 mm 2 in one side) Copper (Cu) traces occupy 5% of the board area In top and back faces Package heat-sink is tied to the copper traces Material: Glass Epoxy (FR-4) Thickness: 1.6 mm Through-hole: 5 x.8 Diameter て 2. Power Dissipation vs. Ambient temperature Evaluation Board (Unit: mm) Board Mount (Tj max = 125 ) Ambient Temperature( ) Power Dissipation Pd(mW) Thermal Resistance ( /W) Power Dissipation Pd (mw) 許容損失 Pd(mW) Pd-Ta vs. 特性グラフ Ta Ambient Temperature 周辺温度 Ta( ) ( ) 25/28

26 PACKAGING INFORMATION (Continued) USP-6C Power Dissipation Power dissipation data for the USP-6C is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition. 3. Measurement Condition (Reference data) Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions 4 x 4 mm (16 mm 2 in one side) Copper (Cu) traces occupy 5% of the board area In top and back faces Package heat-sink is tied to the copper traces Material: Glass Epoxy (FR-4) Thickness: 1.6 mm Through-hole: 4 x.8 Diameter て 2. Power Dissipation vs. Ambient temperature Board Mount (Tj max = 125 ) Evaluation Board (Unit: mm) Ambient Temperature( ) Power Dissipation Pd(mW) Thermal Resistance ( /W) /28