XC6602 Series. APPLICATIONS Smart phones / Mobile phones. FEATURES Maximum Output Current : 1A (1.3A Limit)

Transcription

1 XC66 Series ETR35 A,.5V Low Input Voltage, High Speed LDO Regulator GENERAL DESCRIPTION The XC66 series is a low voltage input (.5V) operation and provides high accuracy ±5mV/±mV and can supply large current efficiently due to its ultra low on-resistance even at low output voltages. The series is ideally suited to the applications which require high current in low input/output voltages and consists of a Nch driver transistor, a voltage reference, an error amplifier, a current limiter, a fold-back circuit, a thermal shutdown (TSD) circuit, an under voltage lock out (UVLO) circuit, a soft-start circuit and a phase compensation circuit. Output voltage is selectable in.v increments within a range of.5v to.8v using laser trimming technology and ceramic capacitors can be used for the output stabilization capacitor (C L ). The inrush current (I RUSH ) from V IN to V OUT for charging C L at start-up can be reduced and makes the V IN stable. The soft-start time is optimized internally. The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor (C L ) to be discharged via the internal switch. As a result the V OUT pin quickly returns to the V SS level. The CE pull-down function keeps the IC to be in stand-by mode even if the CE pin is left open. APPLICATIONS Smart phones / Mobile phones FEATURES Maximum Output Current : A (.3A Limit) Digital still cameras / Camcorders ON Resistance :.5Ω@V BIAS =3.6V,V OUT =.V Note PC / Tablet PC Bias Voltage Range :.5V~6.V E-book Readers / Electronic dictionaries Input Voltage Range :.5V~3.V Wireless LAN Output Voltage Range :.5V~.8V (.V increments) Output Voltage Accuracy : ±.5V@V OUT <.V ±.@V OUT.V Ripple Rejection : 6dB@f=kHz (V BIAS_PSRR ) 75dB@f=kHz(V IN_PSRR ) Low Power Consumption : μa (V BIAS ), 6.5μA(V IN )@V OUT =.V Stand-by Current :.μa (V BIAS ),.μa (V IN ) Under-voltage Lockout :.8V (V BIAS ),.V (V IN ) Thermal Shutdown : Protection Circuit : Fold-back Current Limit, TSD, UVLO Function : Built-in Soft-start CE Pull-Down (Active High) C L Auto Discharge Operating Ambient Temperature : - ~+85 Output Capacitor : Ceramic Capacitor Compatible (.μf) Packages : USPC, SOTW, SOT-89-5,WLP-5- Environmentally Friendly : EU RoHS Compliant, Pb Free TYPICAL APPLICATION CIRCUIT TYPICAL PERFORMANCE CHARACTERISTICS Dropout Voltage vs. Output Current XC66xMR-G V CE=V BIAS, C BIAS=C IN=.μF, C L=.μF Ta=5 Dropout Voltage: Vdif(mV) VBIAS=3.3V VBIAS=3.6V VBIAS=5.V 6 8 Output Current: I OUT (ma) /3

2 XC66 Series PIN CONFIGURATION V BIAS V SS V IN V OUT 5 V IN V OUT V IN 5 V SS CE 3 V BIAS WLP-5- (BOTTOM VIEW) CE 6 NC 5 V OUT USPC (BOTTOM VIEW) 3 V BIAS V SS V IN CE NC V OUT 3 CE V SS V BIAS SOT-89-5 (TOP VIEW) *The dissipation pad for the USPC package should be solder-plated in recommended mount pattern and metal masking so as to enhance mounting strength and heat release. If the pad needs to be connected to other pins, it should be connected to the V SS (No. ) pin. PIN ASSIGNMENT PIN NUMBER USPC SOTW SOT-89-5 WLP-5- PIN NAME FUNCTIONS V BIAS Power Supply Input 5 5 V SS Ground 3 V IN Driver Transistor Input 3 5 V OUT Output NC No Connection 6 CE ON/OFF Control FUNCTION CHART XC66 Series, Type A/B PIN NAME SIGNAL STATUS L Stand-by CE H Active OPEN Stand-by PRODUCT CLASSIFICATION Ordering Information XC ( * ) With soft-start circuit built-in, can be selected from with or without functions DESIGNATOR ITEM SYMBOL DESCRIPTION A Soft-start included Type B Soft-start excluded 3 Output Voltage 5~8 e.g..v = 3= Output Voltage Accuracy ±.5V (V OUT <.V) ±.V (V OUT.V) ER-G USPC (3,/Reel) MR-G SOTW (3,/Reel) PR-G SOT-89-5 (,/Reel) (*) The -G suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant. /3

3 XC66 Series BLOCK DIAGRAMS Type A Type B * Diodes inside the circuits are ESD protection diodes and parasitic diodes. ABSOLUTE MAXIMUM RATINGS Ta=5 PARAMETER SYMBOL RATINGS UNITS Bias Voltage V BIAS V SS -.3~V SS +6.5 V Input Voltage V IN V SS -.3~V SS +6.5 V Output Current I OUT.65 (*) A Output Voltage V OUT V SS -.3~V BIAS +.3 V SS +6.5 V V SS -.3~V IN +.3 V SS +6.5 V V CE V SS -.3~V SS +6.5 V USPC ( PCB mounted ) (*) 5 SOTW Power Dissipation Pd 6 ( PCB mounted ) (*) mw SOT-89-5 WLP-5- Operating Ambient Temperature Storage Temperature 5 3 ( PCB mounted ) (*) 75 ( PCB mounted ) (*) Topr -~+85 Tstg -55~+5 (*) I OUT Pd/(V IN -V OUT ) (*) The power dissipation measured with the test board condition is listed as reference data. Please refer to page 5~8 for details. 3/3

4 XC66 Series ELECTRICAL CHARACTERISTICS Ta=5 PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS CIRCUIT Bias Voltage V BIAS.5-6. V Input Voltage V IN.5-3. V Output Voltage V OUT(E) (*) I OUT =ma V OUT(T) <.V V OUT(T).V -. V OUT(T) (*3) +. V OUT(T).V, V BIAS =V CE =.5V Maximum Output Current ( *) I OUTMAX. - - A V OUT(T) >.V,V BIAS =V CE =V OUT(T) +.3V Load Regulation (WLP-5-) Load Regulation (USPC,SOTW,SOT-89-5) ΔV OUT ma I OUT A mv ΔV OUT ma I OUT A mv Dropout Voltage Vdif (*5) I OUT =A - E- (*8) mv Supply Current (*9) I BIAS I OUT =A 76 3 μa Supply Current I IN I OUT =A V OUT(T) <.V V OUT(T).V Stand-by Current I BIAS_STBB V BIAS =6.V,V IN =3.V,V CE =V SS -.. μa Stand-by Current I IN_STBB V BIAS =6.V,V IN =3.V,V CE =V SS -..5 μa Bias Line Regulation Input Line Regulation ΔV OUT / (ΔV BIAS V OUT ) ΔV OUT / (ΔV IN V OUT ) V OUT(T).V,V CE =V BIAS.5V V BIAS 6.V V OUT(T) >.V,V CE =V BIAS V OUT(T) +.3V V BIAS 6.V V μa -.. %/V V OUT(T) +.V V IN 3.V -.. %/V Bias UVLO Voltage V BIAS_UVLOD V SS -.8 V Bias UVLO Release Voltage V BIAS_UVLOR.5-6. V Input UVLO Voltage V IN_UVLOD V SS -.3 V Input UVLO Release Voltage V IN_UVLOR.5-3. V Output Voltage Temperature Characteristics ΔV OUT / (ΔTopr V OUT ) I OUT =ma - Topr 85 - ±3 - ppm/ Bias Ripple Rejection Ratio V BIAS_PSRR V BIAS =V CE =3.6V DC +.V p-pac I OUT =ma,f=khz,c BIAS =OPEN db 3 Input Ripple Rejection Ratio V IN_PSRR V IN =V OUT(T) +.3V DC +.V p-pac I OUT =ma,f=khz,c IN =OPEN db 3 Limit Current ( *) I LIM V OUT =V OUT(E) A Short Current I SHORT V OUT =V SS ma Thermal Shutdown Detect Temperature Thermal Shutdown Release Temperature T TSD Junction Temperature T TSR Junction Temperature Thermal Shutdown Hysteresis Width T TSD - T TSR Junction Temperature C L Auto-Discharge Resistance R DCHG V CE =V SS,V OUT =V OUT(T) Ω CE H Level Voltage V CEH V CE L Level Voltage V CEL V SS -. V CE H Level Current I CEH V BIAS =V CE =6.V μa CE L Level Current I CEL V BIAS =6.V,V CE =V SS μa Soft-Start Time (Type A) (*) t SS V CE =V 3.6V,tr=5μs μs 5 Output Rise Time (Type B) (*) t ON V CE =V 3.6V,tr=5μs - - μs 5 C L =.μf Inrush Current (Type A) I RUSH C L =μf V OUT(T).V ma 5 V OUT(T) >.V ma 5 V OUT(T).V ma 5 V OUT(T) >.V ma 5 * : Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS =C IN =.μf, C L =.μf * : V OUT(E) = Effective output voltage * 3: V OUT(T) = Nominal output voltage * : Mount conditions affect heat dissipation. Maximum output current is not guaranteed when TSD starts to operate earlier. * 5: Vdif = {V IN (*6) -V OUT (*7) }. * 6: V IN is an input voltage when V OUT appears at the output during decreasing input voltage gradually. * 7: V OUT is a voltage equal to 98% of the output voltage where V BIAS =V CE =3.6 and V IN =V OUT(T) +.3V at I OUT =A is input to the V IN pin. * 8: Please refer to the table E- named DROPOUT VOLTAGE CHART * 9: Supply current may be fluctuated because that some bias current flows into the output. * : A time between the CE input goes over the CE H threshold and the output reaches V OUT(E) x.9v. /3

5 XC66 Series ELECTRICAL CHARACTERISTICS (Continued) OUTPUT VOLTAGE CHART (WLP-5-) NOMINAL OUTPUT VOLTAGE V OUT(T) V GS E- DROPOUT VOLTAGE (mv) V BIAS =3.V V BIAS =3.3V V BIAS =3.6V V BIAS =.V V BIAS =5.V Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) V GS V GS (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. V GS V GS * Dropout voltage is defined as the V GS (=V BIAS V OUT(E) ) of the driver transistor. OUTPUT VOLTAGE CHART (USPC,SOTW,SOT-89-5) NOMINAL OUTPUT VOLTAGE V OUT(T) V GS E- DROPOUT VOLTAGE (mv) V BIAS =3.V V BIAS =3.3V V BIAS =3.6V V BIAS =.V V BIAS =5.V Vdif (mv) Vdif (mv) Vdif (mv) Vdif (mv) Vdif (mv) V GS V GS (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. V GS V GS * Dropout voltage is defined as the V GS (=V BIAS V OUT(E) ) of the driver transistor. 5/3

6 XC66 Series OPERATIONAL EXPLANATION The voltage divided by resistors R and R is compared with the internal reference voltage by the error amplifier. The V OUT pin is then driven by the subsequent output signal. The output voltage at the V OUT pin is controlled and stabilized by a system of negative feedback. V BIAS pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. Also, the V BIAS pin supplies some current as output current. V IN pin is connected to a driver transistor and provides output current. In order to obtain high efficient output current through low on-resistance, please take enough V GS (=V BIAS V OUT(E) ) of the driver transistor. Figure: XC66 Series, Type A <Soft-Start Function> With the XC66 (Type A), the inrush current (I RUSH ) from V IN to V OUT for charging C L at start-up can be reduced and makes the V IN stable. As for the XC66, the soft-start time in the type A is optimized internally. On the other hand, the type B of the XC66 does not have the soft-start time function. <Current Limiter, Short-Circuit Protection> The XC66 series includes a combination of a fixed current limiter circuit and a foldback short-circuit protection. When the output current reaches the current limit, the output voltage drops and this operation makes the output current foldback to be decreased. <Thermal Shutdown Circuit (TSD) > When the junction temperature of the built-in driver transistor reaches the temperature limit, the thermal shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown function is released and the IC s operation is automatically restored because the junction temperature drops to the level of the thermal shutdown release temperature. <Under Voltage Lock Out (UVLO) > When the V BIAS pin and V IN pin voltage drops, the output driver transistor is set to OFF by UVLO function to prevent false output caused by unstable operation of the internal circuitry. When the V BIAS pin voltage and the V IN pin voltage rises at release voltage, the UVLO function is released. The driver transistor is turned ON and start to operate voltage regulation. 6/3

7 XC66 Series OPERATIONAL EXPLANATION (Continued) <CE Pin> The XC66 internal circuitry can be shutdown via the signal to the CE pin. In shutdown mode with CE low level voltage, the V OUT pin will be pulled down to the V SS level via C L discharge resistance (R DCHG ) placed in parallel to R and R. The CE pin has pull-down circuitry so that CE input current flows during IC operation. If the CE pin voltage is taken from V BIAS pin or V SS pin then logic is fixed and the IC will operate normally. However, supply current may increase as a result of through current in the IC's internal circuitry when medium voltage is input. <CL High Speed Auto-Discharge> XC66 series can quickly discharge the electric charge at the output capacitor (C L ) via the internal transistor located between the V OUT pin and the V SS pin when a low signal to the CE pin which enables a whole IC circuit put into OFF state. When the IC is disabled, electric charge at the output capacitor (C L ) is quickly discharged so that it could avoids malfunction. Discharge time of the output capacitor (C L ) is set by the C L auto-discharge resistance (R DCHG ) and the output capacitor (C L ). By setting time constant of a C L auto-discharge resistance value (R DCHG ) and an output capacitor value (C L ) as τ(τ= C L x R DCHG ), the output voltage after discharge via the internal transistor is calculated by the following formula. Please also note R DCHG is depended on V BIAS. When V BIAS is larger, R DCHG is smaller. V = V OUT(E) e -t/τ or t=τln(v OUT(E) / V) (V: Output voltage after discharge, V OUT(E) : Initial Output voltage, t: Discharge time, τ: C L auto-discharge resistance R DCHG C L Output capacitance <Low ESR Capacitor> With the XC66 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation circuit is built-in. The output capacitor (C L ) should be connected as close to V OUT pin and V SS pin to obtain stable phase compensation. Values required for the phase compensation are as the table below. For a stable power input, please connect an bias capacitor (C BIAS ) between the V BIAS pin and the V SS pin. Also, please connect an input capacitor (C IN ) between the V IN pin and the V SS pin. In order to ensure the stable phase compensation while avoiding run-out of values, please use the capacitor (C BIAS, C IN, C L ) which does not depend on bias or temperature too much. The table below shows recommended values of C BIAS, C IN, C L. CHART :Recommended Values of C BIAS, C IN, C L (MIN.) OUTPUT VOLTAGE RANGE BIAS CAPACITOR INPUT CAPACITOR OUTPUT CAPACITOR V OUT(T) C BIAS C IN C L.5V~.8V.μF.μF.μF 7/3

8 XC66 Series NOTES ON USE. For temporary, transitional voltage drop or voltage rising phenomenon, the IC is liable to malfunction should the ratings be exceeded.. Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output current. Please keep the resistance low for the V BIAS, V IN and V SS wiring in particular. 3. Please wire the C BIAS, C IN and C L as close to the IC as possible.. Capacitances of these capacitors (C BIAS, C IN, C L ) are decreased by the influences of bias voltage and ambient temperature. Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR influence. 5. When it is used in a quite small input / output dropout voltage, output may go into unstable operation. Please test it thoroughly before using it in production. 6. Torex places an importance on improving our products and their reliability. We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems 7. Note on mounting (WLP-5-) () Mount pad design should be optimized for user's conditions. () Sn-AG-Cu is used for the package terminals. If eutectic solder is used, mounting reliability is decreased. Please do not use eutectic solder paste. (3) When underfill agent is used to increase interfacial bonding strength, please take enough evaluation for selection. Some underfill materials and applied conditions may decrease bonding reliability. () The IC has exposed surface of silicon material in the top marking face and sides so that it is weak against mechanical damages. Please take care of handling to avoid cracks and breaks. (5) The IC has exposed surface of silicon material in the top marking face and sides. Please use the IC with keeping the circuit open (avoiding short-circuit from the out). (6) Semi-transparent resin is coated on the circuit face of the package. Please be noted that the usage under strong lights may affects device performance. 8/3

9 XC66 Series TEST CIRCUITS Circuit Circuit Circuit 3 Circuit C BIAS.μF V BIAS V V C IN.μF A V IN CE V OUT C L.μF V A R L V V SS 9/3

10 XC66 Series TEST CIRCUITS (Continued) Circuit 5 (Timing Chart) XC66 Series, Type A XC66 Series, Type B /3

11 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 () Output Voltage vs. Output Current () Output Voltage vs. Bias Voltage XC66x5MR-G XC66x5xR-G VIN=.8V VIN=.V IOUT=mA IOUT=mA IOUT=mA..5.5 Output Current: I OUT (A). 3 5 Bias Voltage: V BIAS (V) 6 XC66xMR-G XC66xxR-G VIN=.5V VIN=.7V IOUT=mA IOUT=mA IOUT=mA..5.5 Output Current: I OUT (A) Bias Voltage: V BIAS (V) XC66x8MR-G XC66x8xR-G VIN=.V VIN=.3V.5.5 Output Current: I OUT (A) IOUT=mA IOUT=mA IOUT=mA Bias Voltage: V BIAS (V) * Mount conditions affect heat dissipation. Thermal shutdown may start to operate before reaching the current limit. /3

12 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 (3) Output Voltage vs. Input Voltage () Dropout Voltage vs. Output Current XC66x5xR-G XC66xMR-G IOUT=mA IOUT=mA IOUT=mA Dropout Voltage: Vdif(mV) VBIAS=3.V VBIAS=3.3V VBIAS=3.6V VBIAS=.V VBIAS=5.V Input Voltage: V IN (V) Output Current: I OUT (ma) XC66xxR-G XC66xxxMR-G I OUT =A IOUT=mA IOUT=mA IOUT=mA Dropout Voltage: Vdif(mV) Ta=- Ta=5 Ta= Input Voltage: V IN (V) V GS (*) (V) XC66x8xR-G (*) V GS is a Gate Source voltage of the driver transistor that is defined as the value of V BIAS - V OUT(E). A value of the dropout voltage is determined by the value of the V GS IOUT=mA IOUT=mA IOUT=mA 3 Input Voltage: V IN (V) /3

13 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 (5) Supply Bias Current vs. Bias Voltage (6) Supply Input Current vs. Input Voltage XC66x5xR-G XC66x5xR-G C IN =C BIAS =C L =OPEN V CE =V BIAS, I OUT =ma C IN =C BIAS =C L =OPEN I OUT =ma Supply Bias Current: IBIAS(μA) Ta=- Ta=5 Ta= Supply Input Current: IIN(μA) 5 5 Ta=- Ta=5 Ta= Bias Voltage: V BIAS (V) Input Voltage: V IN (V) XC66xxR-G XC66xxR-G C IN =C BIAS =C L =OPEN V CE =V BIAS, I OUT =ma C IN =C BIAS =C L =OPEN I OUT =ma Supply Bias Current: IBIAS(μA) Ta=- Ta=5 Ta= Supply Input Current: IIN(μA) 5 5 Ta=- Ta=5 Ta= Bias Voltage: V BIAS (V) Input Voltage: V IN (V) XC66x8xR-G XC66x8xR-G C IN =C BIAS =C L =OPEN V CE =V BIAS, I OUT =ma, C IN =C BIAS =C L =OPEN I OUT =ma Supply Bias Current: IBIAS(μA) Ta=- Ta=5 Ta= Supply Input Current: IIN(μA) 5 5 Ta=- Ta=5 Ta= Bias Voltage: V BIAS (V) Input Voltage: V IN (V) 3/3

14 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 (7) Output Voltage vs. Ambient Temperature (8) Supply Bias Current vs. Ambient Temperature XC66x5xR-G.5 IOUT=mA.5 IOUT=mA Ambient Temperature: Ta( ) Supply Bias Current: IBIAs(μA) XC66x5xR-G C IN =C BIAS =C L =OPEN I OUT =ma Ambient Temperature: Ta( ) XC66xxR-G. IOUT=mA. IOUT=mA Ambient Temperature: Ta( ) Supply Bias Current: IBIAs(μA) XC66xxR-G C IN =C BIAS =C L =OPEN I OUT =ma Ambient Temperature: Ta( ) XC66x8xR-G.8 IOUT=mA.8 IOUT=mA Ambient Temperature: Ta( ) Supply Bias Current: IBIAs(μA) XC66x8xR-G C IN =C BIAS = C L =OPEN I OUT =ma Ambient Temperature: Ta( ) /3

15 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 (9) Supply Input Current vs. Ambient Temperature Supply Input Current: IIN(μA) XC66x5xR-G C IN =C BIAS =C L =OPEN I OUT =ma Ambient Temperature: Ta( ) Supply Input Current: IIN(μA) XC66xxR-G C IN =C BIAS =C L =OPEN I OUT =ma Ambient Temperature: Ta( ) Supply Input Current: IIN(μA) XC66x8xR-G C IN =C BIAS =C L =OPEN I OUT =ma Ambient Temperature: Ta( ) 5/3

16 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 () Bias Transient Response () Input Transient Response XC66x5xR-G XC66x5xR-G C BIAS =OPEN V BIAS =3.V.V(tr=tf=5μs), I OUT =ma C IN =OPEN V IN =.8V.8V(tr=tf=5μs), I OUT =ma Bias Voltage: VBIAS(V) Input Voltage: VIN(V) Time (μs/div) Time (μs/div) XC66xxR-G XC66xxR-G C BIAS =OPEN V BIAS =3.V.V(tr=tf=5μs) I OUT =ma C IN =OPEN V IN =.5V.5V(tr=tf=5μs), I OUT =ma Bias Voltage: VBIAS(V) Input Voltage: VIN(V) Time (μs/div) Time (μs/div) XC66x8xR-G XC66x8xR-G C BIAS =OPEN V BIAS =3.6V.6V(tr=tf=5μs) I OUT =ma C IN =OPEN V IN =.V 3.V(tr=tf=5μs), I OUT =ma Bias Voltage: VBIAS(V) Input Voltage: VIN(V) Time (μs/div) Time (μs/div) 6/3

17 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 () Load Transient Response XC66x5xR-G I OUT =ma ma(tr=tf=5μs) Output Current Output Voltage Time (μs/div) Outpur Current: IOUT(A) XC66xxR-G I OUT =ma ma(tr=tf=5μs) Output Current Output Voltage Time (μs/div) Outpur Current: IOUT(A) XC66x8xR-G I OUT =ma ma(tr=tf=5μs) Output Current Output Voltage Time (μs/div) Outpur Current: IOUT(A) 7/3

18 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 (3) Response XC66A5xR-G V CE =V 3.6V(tr=5μs) I OUT =ma XC66A5xR-G V CE =V 3.6V(tr=5μs) I OUT =ma - - Input Current 5 5 Input Current: IIN (ma) - - Rush Current Input Current 5 5 Input Current: IIN (ma) -5-5 Time (μs/div) Time (5μs/div) XC66AxR-G XC66AxR-G V CE =V 3.6V(tr=5μs) I OUT =ma V CE =V 3.6V(tr=5μs) I OUT =ma - - Input Current 5 5 Input Current: IIN (ma) - - Rush Current Input Current 5 5 Input Current: IIN (ma) -5-5 Time (μs/div) Time (5μs/div) XC66A8xR-G V CE =V 3.6V(tr=5μs) I OUT =ma XC66A8xR-G V CE =V 3.6V(tr=5μs) I OUT =ma - - Input Current 5 5 Input Current: IIN (ma) - - Rush Current Input Current 5 5 Input Current: IIN (ma) -5-5 Time (μs/div) Time (5μs/div) 8/3

19 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 (3) Response (Continued) XC66A5xR-G C L =μf V CE =V 3.6V(tr=5μs), I OUT =ma XC66A5xR-G C L =μf V CE =V 3.6V(tr=5μs), I OUT =ma - - Input Current 3 Input Current: IIN (ma) - - Rush Current Input Current 3 Input Current: IIN (ma) - - Time (μs/div) Time (5μs/div) XC66AxR-G C L =μf V CE =V 3.6V(tr=5μs), I OUT =ma XC66AxR-G C L=μF V CE =V 3.6V(tr=5μs), I OUT =ma - - Input Current 3 Input Current: IIN (ma) - - Rush Current Input Current 3 Input Current: IIN (ma) - - Time (μs/div) Time (5μs/div) XC66A8xR-G XC66A8xR-G C L =μf V CE =V 3.6V(tr=5μs), I OUT =ma C L =μf V CE =V 3.6V(tr=5μs), I OUT =ma - - Input Current 3 Input Current: IIN (ma) - - Rush Current Input Current 3 Input Current: IIN (ma) - - Time (μs/div) Time (5μs/div) 9/3

20 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 () CE Rising Response Time XC66A5xR-G V CE =V 3.6V(tr=5μs) I OUT =ma XC66B5xR-G V CE =V 3.6V(tr=5μs) I OUT =ma Output Voltage..8. Output Voltage: VOUT (V) - - Output Voltage..8. Output Voltage: VOUT (V) Time (μs/div) Time (μs/div) XC66AxR-G V CE =V 3.6V(tr=5μs) I OUT =ma XC66BxR-G V CE =V 3.6V(tr=5μs) I OUT =ma - - Output Voltage.5.5 Output Voltage: VOUT (V) - - Output Voltage.5.5 Output Voltage: VOUT (V) Time (μs/div) Time (μs/div) XC66A8xR-G V CE =V 3.6V(tr=5μs) I OUT =ma XC66B8xR-G V CE =V 3.6V(tr=5μs) I OUT =ma - - Output Voltage 3 Output Voltage: VOUT (V) - - Output Voltage 3 Output Voltage: VOUT (V) - - Time (μs/div) Time (μs/div) /3

21 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 (5) V IN Rising Response Time XC66A5xR-G C IN =OPEN V IN =V.8V(tr=5μs), I OUT =ma.6 Input Voltage: VIN(V) Input Voltage Output Voltage..8. Output Voltage: VOUT (V) Time (μs/div) XC66AxR-G C IN =OPEN V IN =V.5V(tr=5μ), I OUT =ma Input Voltage: VIN(V) - - Input Voltage Output Voltage.5.5 Output Voltage: VOUT (V) Time (μs/div) XC66A8xR-G C IN =OPEN V IN =V.V(tr=5μs), I OUT =ma Input Voltage: VIN(V) 3 - Input Voltage Output Voltage 3 Output Voltage: VOUT (V) - - Time (μs/div) /3

22 XC66 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, V BIAS =V CE =3.6V, V IN =V OUT(T) +.3V, I OUT =ma, C BIAS = C IN =.μf, C L =.μf, Ta=5 (6) Bias Voltage Ripple Rejection Rate (7) () Input バイアス過渡応答特性例 Voltage Ripple Rejection Rate VBIAS_PSRR (db) XC66x5xR-G Frequency (khz) C BIAS =OPEN V BIAS =3.6V DC +.Vp-p AC, I OUT =ma VIN_PSRR (db) XC66x5xR-G Frequency (khz) C IN =OPEN V IN =.8V DC +.Vp-p AC, I OUT =ma VBIAS_PSRR (db) XC66xxR-G C BIAS =OPEN V BIAS =3.6V DC +.Vp-p AC, I OUT =ma VIN_PSRR (db) XC66xxR-G C IN =OPEN V IN =.5V DC +.Vp-p AC, I OUT =ma Frequency (khz) Frequency (khz) VBIAS_PSRR (db) XC66x8xR-G C BIAS =OPEN V BIAS =3.6V DC +.Vp-p AC, I OUT =ma VIN_PSRR (db) XC66x8xR-G C IN =OPEN V IN =.V DC +.Vp-p AC, I OUT =ma Frequency (khz) Frequency (khz) /3

23 XC66 Series PACKAGING INFORMATION SOTW (unit : mm).± ±. 6 5 ~..6MAX 3 (.95).9± ±..7±.5.5±.5 WLP-5- (unit : mm).88±. (.).8 MIN.5±..8 MIN.35 MAX 5 5. MAX.5±. pin INDENT (.35) (.9).5±.5 (.) 5-.5±..5 (.9).5±. (.866) 5 3 (.5) 3/3

24 XC66 Series PACKAGING INFORMATION (Continued) USPC Reference Pattern Layout USPC Reference Metal Mask Design /3

25 XC66 Series PACKAGING INFORMATION (Continued) USPC Power Dissipation Power dissipation data for the USPC is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as the reference data taken in the following condition.. Measurement Condition Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions x mm (6 mm in one side) Copper (Cu) traces occupy 5% of the board area In top and back faces Package heat-sink is tied to the copper traces Material: Glass Epoxy (FR-) Thickness:.6 mm Through-hole: x.8 Diameter て. Power Dissipation vs. Ambient temperature Evaluation Board (Unit: mm) Board Mount (Tj max = 5 ) Ambient Temperature( ) Power Dissipation Pd(mW) Thermal Resistance ( /W) Pd-Ta 特性グラフ Pd vs. Ta Power Dissipation: Pd (mw) 許容損失 Pd(mW) Ambient 周辺温度 Temperature: Ta( ) ( ) 5/3

26 XC66 Series PACKAGING INFORMATION (Continued) SOTW Power Dissipation Power dissipation data for the SOTW is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as the reference data taken in the following condition.. Measurement Condition Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions x mm (6 mm in one side) Copper (Cu) traces occupy 5% of the board area In top and back faces Package heat-sink is tied to the copper traces (Board of SOT is used.) Material: Glass Epoxy (FR-) Thickness:.6 mm Through-hole: x.8 Diameter. Power Dissipation vs. Ambient temperature 評価基板レイアウト Evaluation Board (Unit:( mm) 単位 :mm) Board Mount (Tj max = 5 ) Ambient Temperature( ) Power Dissipation Pd(mW) Thermal Resistance ( /W) Power Dissipation: Pd (mw) 許容損失 Pd(mW) Pd-Ta 特性グラフ Pd vs. Ta Ambient 周辺温度 Temperature: Ta( ) ( ) 6/3

27 XC66 Series PACKAGING INFORMATION (Continued) SOT-89-5 Power Dissipation Power dissipation data for the SOT-89-5 is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as the reference data taken in the following condition.. Measurement Condition Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free Board: Dimensions x mm (6 mm in one side) Copper (Cu) traces occupy 5% of the board area In top and back faces Package heat-sink is tied to the copper traces Material: Glass Epoxy (FR-) Thickness:.6 mm Through-hole: 5 x.8 Diameter て Evaluation Board (Unit: mm). Power Dissipation vs. Ambient temperature Board Mount (Tj max = 5 ) Ambient Temperature( ) Power Dissipation Pd(mW) Thermal Resistance ( /W) Power Dissipation: Pd (mw) 許容損失 Pd(mW) Pd-Ta 特性グラフ Pd vs. Ta Ambient 周辺温度 Temperature: Ta( ) ( ) 7/3

28 XC66 Series PACKAGING INFORMATION (Continued) WLP-5- Power Dissipation Power dissipation data for the WLP-5- is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition.. Measurement Conditions Condition : Mount on a board Ambient : Natural convection..5 Soldering : Lead (Pb) free Board Dimensions : mm mm(6mm in one side) Metal Area : st Metal Layer about 5% nd Inner Metal Layer about 5% 3rd Inner Metal Layer about 5%.5. Material th Metal Layer about 5% separations is each layer connected to each pin : Glass Epoxy(FR-) 8.9. Thickness :.6mm Through-hole : x.8 Diameter 8.9. Power Dissipation vs. Ambient temperature Board Mount ( Tjmax=5 ) Ambient Temperature ( ) Power Dissipation Pd (mw) Thermal Resistance ( /W) Pd vs. Ta Power Dissipation Pd(mW) Ambient Temperature Ta( ) 8/3

29 XC66 Series MARKING RULE represents product series MARK P R PRODUCT SERIES XC66A****-G XC66B****-G SOTW 6 5 represents voltage range MARK OUTPUT VOLTAGE (V) MARK OUTPUT VOLTAGE (V) A.5 N.5 B.6 P.6 C.7 R.7 D.8 S.8 E.9 T - F. U - H. V - K. X - L.3 Y - M. Z represents production lot number to 9, A to Z, to 9Z, A to A9, AA to Z9, B to ZZ in order. (G, I, J, O, Q, W excluded) *No character inversion used. 9/3

30 XC66 Series MARKING RULE (Continued) represents product series MARK PRODUCT SERIES SOT USPC 7 XC66******-G represents regulator type MARK PRODUCT SERIES A XC66A****-G B XC66B****-G represents voltage range MARK OUTPUT VOLTAGE (V) MARK OUTPUT VOLTAGE (V) MARK OUTPUT VOLTAGE (V).5 A.5 N -.6 B.6 P -.7 C.7 R D.8 S -.9 E - T - 5. F - U - 6. H - V - 7. K - X L - Y - 9. M - Z - WLP represents production lot number to 9, A to Z, to 9Z, A to A9, AA to AZ, B to ZZ in order. (G, I, J, O, Q, W excluded) 3/3

31 XC66 Series. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date.. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet.. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 3/3