CHAPTER 35 MAGNETIC FIELD DUE TO CURRENT

Size: px
Start display at page:

Download "CHAPTER 35 MAGNETIC FIELD DUE TO CURRENT"

Transcription

1 HTER 3 MGNETI FIEL UE T URRENT F F N. F q o, q T.sec. / sec. o,., m m N m 7 6 T T ong +ve Y ecton mm So,.8 mm.8 m 7 8., 8 m 7. T 8. 7 T-m/ 3 T mt N m N cm. m,, T We know: Mgnetc fe ue to ong stght we cyng cuent 7 t T upw. net 7 T T t Q T ownws Hence net 6. ( The mmum mgnetc fe s whch e ong the eft keepng the sense ong the ecton of tveng cuent. (bthe mnmum If net < net > net 7. 7 T-m/, 3,. T e to cuent. T ue to woe t pt. cm T. net fe 3 T 3 Z s Q cm cm m X s 8 m 3.

2 8.. ( Kˆ 3 T South to Noth ( Ĵ 3. Mgnetc Fe ue to uent To cnce the mgnetc fe the pont shou be choosen so tht the net mgnetc fe s ong - Ĵ ecton. The pont s ong - î ecton o ong west of the we m mm Let the tow wes be postone t & R, (. (. ( ue to Q, t ue to, t net T 7.88 m T ( tows up the ne.33 T ( tows own the ne (b ue to t T own the ne. 7 ue to t.67 T own the ne.3 net t T (c t 3 ue to T t 3 ue to T Net t 3 T 7 tows own the ne tows own the ne ( t ue to.7 T tows SE.88 t ue to.7 T Net tows SW. os ½, 6 & 6 7 T So net s [( + ( + ( 8 os 6 ] /.989 T [ + + ½ ] / - 3 T.73 T. ( fo X fo Y oth e oppostey ecte hence net (b ue to X ue to X both ecte ong Z s 7 Net 6 T T (c ue to X ue to Y both ecte opposte to ech othe. Hence Net ( ue to X ue to Y 6 T both ecte ong ( ve Z s Hence Net. 6 T (, 3 cm cm cm cm (, (, (,

3 Mgnetc Fe ue to uent. ( Fo ech of the we Mgntue of mgnetc fe (Sn Sn / Fo fo Fo n fo. The two n fes cnce ech othe. Thus net (b t pont Q ue to ( ue to ( ue to (3 ue to (. ( / ( / (/3 7 (/3 Q 3 3 Q Q / cm Q net [ + + (/3 + (/3] T t pont Q ue to ( ue to ( ue to (3 ue to ( net t pont Q 3 ue to ( ue to ( ue to (3 ue to ( o (. o ( / o (. o ( / 7 ( / 7 ( / 7 ( / 7 ( / /3 /3 net [ + + (/3 + (/3] T Fo Q ue to ( /3 ue to ( ue to (3 /3 ue to ( net 3.3

4 Mgnetc Fe ue to uent 3. Snce the ponts e ong cce wth us Hence R & Q both t stnce fom the we. R So, mgnetc fe ue to e sme n mgntue. s the wes cn be tete s sem nfnte stght cuent cyng conuctos. Hence mgnetc fe t ue to s t Q ue to s ue to s ue to s t R ue to s t S ue to s ue to s ue to s. Sn ( When >> Negectng w..t. S / Q (b When >>, negectng w..t. /., cm. m 3. m (Sn Sn T. T Q cm 3 3 Q 3.

5 Mgnetc Fe ue to uent 6., ( Sn s esstnces vy s & Hence uent ong 3 Now, 8. ue to 3 ue to 3 Now & ong Mgnetc fe ue to (Sn (9 + Sn (9 / / os ( / Mgnetc fe ue to Sn (9 3 / os 3 3 ( / 3 / The mgnetc fe ue to & e equ n ppopte hence cnce ech othe. Hence, net mgnetc fe s /3 /3 / / / 3/ / 3.

6 Mgnetc Fe ue to uent 9. ue t & ue to t t e equ oe pposte Hence net Smy, ue to & t The net t the ente of the sque oop zeo.. Fo s ong (Sn6 Sn6 Fo (Sn6 Sn6 Fo (Sn6 Fo (Sn6 Net. ( s Equte /3 uent So, M s M : M : Q 6 M 6 ue to t <. (Sn Sn net (b ue to 8 Net 8. Sn (/ /8 Sn (/ Mgnetc fe ue to R Sn(8 (9 ( / [Sn(9 ( / ] Sn( / (os( / Sn( / os ( / ot( / Sn( / os( / The mgnetc fe ue to both the we. ot( / ot( / 3.6

7 3. Sn Sn b b Sn ( +b b b Sn b b Net b b Sn Sn + b b., n n n ( b / ( / / (b / b b b b / / b Mgnetc Fe ue to uent b b b b Tn Tn n (Sn Sn ( Tn( / nsn( / nn Tn Sn ntn( / nsn( / n ntn( / nsn( / n Fo n ses, net. Net cuent n ccut Hence the mgnetc fe t pont [wng to whet stone bge pncpe] 6. Foce ctng on cm of we s N F 7-3. m cm 7. Mgnetc foce ue to two pe uent yng wes. F So, F o F by + F by N tows me we cm 3 3.7

8 8. ( cm The th we shou be pce cm fom the we n 8 cm fom we. 9. F F + F EF ownw. E F F + F EF s F & F EF e equ n oppostey ecte hence F 3. mg (Fo poton of we of ength m F Q 3 F on F 3 Q 3 7 [og] 7 [og 3 og ] Smy foce of F RS 7 [og 3 og ] So, F Q F S F RS 6 F RQ N (Tows ght N 3 Net foce tows own ( N 3.. mt,, n,? n n Mgnetc Fe ue to uent 3. 3 m.7 3 m.7 cm.7 cm 3. I S I cm ( F F mg R Q cm

9 Mgnetc Fe ue to uent n 33. n, 6 T cm. m n evoutons n sec. evoutons n sec 3 q.6 t m / n ech semcce ( / ownws ( / upws Net 36. cm cm n n n n ( n n (b 37. ute ce n, m. m n. Inne ce cm. m, n T hozonty tows West. n, ownws. Net cm,, V 6 m/s, 3 F e(v ev Sn Sn N mt / / 3.9

10 39. Lge oop R ue to ge oop on the sme oop ( Sn 9. The foce ctng on the sme oop F Sn o R R. mpee, cm. m s the semccu we foms hf of ccu we, 7 So,..7 6 T 6 6 T.6 T. R 3 R t T 3. ue to oop Let the stght cuent cyng we be kept t stnce R fom cente. Gven ue to we R R 3. Mgnetc Fe ue to uent Now, the ue to both w bnce ech othe Hence R R Hence the stght we shou be kept t stnce / fom cente n such wy tht the ecton of cuent n t s opposte to tht n the neest pt of ccu we. s esut the ecton w w be oppose.. n,, cm n n ( 3.. T. mt (b ( n 3 / 7 n ( n 3 / 3 / ( ( + 3/ 3 + ( 3 /3 + ( /3 + /3 ( + /3 ( + /3 ( ( /3 ( ( /3 ( m cm.. t the must be ecte ownws We Know t the ne t & ( 3 / 7.6 ((. 3 / cm. m 3 cm.3 m 6 T ownws n both the cses cm M cm R R 3 cm 3 cm.3 m

11 Mgnetc Fe ue to uent 6. q 3. 6, cm. m, q 3. 6 w 6 /sec.,. t. Q Eectc fe Mgnetc fe / 3 / (. 7. ( Fo nse the tube s, nse the conuctng tube o (b Fo outse the tube 3 6 Q 3 / 3 / / 3 8. ( t pont just nse the tube the cuent encose n the cose sufce. Thus o (b Tkng cync sufce just out se the tube, fom mpee s w. b b 9. s unfomy stbute thoughout. So, fo the pt of us b b Now ccong to mpee s ccut w b b. ( cm m m, n the egon of us cm b b ( ( ( (- 7. (b cm us ( 7.. (c cm ( (

12 . We know,. Theotcy t Mgnetc Fe ue to uent If, cuent s psse though the oop QRS, then w est n ts vcnty. ( b R S Now, s the b t s zeo. So thee be no ntecton Howeve pctcy ths s not tue. s cuent cyng oop, espectve of ts ne bout poston s wys ffecte by n estng mgnetc fe.. ( t pont,, Thus (b t pont R,, (c t pont, ppyng mpee s ue to the bove ectnge K o Q k K o k b k k Snce the ue to the stpes e ong the sme ecton, thus. k net k k 3. hge q, mss m We know us escbe by chge ptce n mgnetc fe m q t K [ccong to mpee s ccut w, whee K s constnt] m q k q k m., 3. T, n? n 3. 7 n n 7. tuns/m.. mm,, n (fo soeno Wth of ech tun mm 3 m No. of tuns n 3 3 So, T 6. R. n m,. cm Tot tuns, cm, T, n tuns/m E E R / ( R E.. n 3.

13 Mgnetc Fe ue to uent 7 E E uent t ue to the ccu oop fo the whoe soeno. V n 3 / n n 3 3 / 3 / n 3 / n / / 8., f 8 ev/sec, n?, m e 9. 3 kg, q e.6 9 c, n n f q m e fm q e e n fme q e tuns/m 9. No. of tuns pe unt ength n, us of cce /, cuent n the soeno, hge of tce q, mss of ptce m n mv gn qv V 6. No. of tuns pe unt ength q m ( s the net mgnetc fe zeo pte Soeno pte k k pte k Equtng both (b k c q n m nq m...( Soeno k k k k k k k n n 6. f, Q V 3, t sec, V V, V 8 V, Q V.8 3, n ( Q Q n tuns/m. t n T c n

Copyright 2014 Winnebago Industries, Inc.

Copyright 2014 Winnebago Industries, Inc. anger of electrical shock, burns or death. lways remove all power sources before attempting any repair, service or diagnostic work. Power can be present from shore power, generator, inverter or battery.

More information

14 Magnetic effect of electric current

14 Magnetic effect of electric current Taet Publcaton Pvt. Ltd. Chapte : Manetc Effect of Electc Cuent Manetc effect of electc cuent. B Hnt to Poblem fo Pactce n R 7 B. 6.8 T. B N n. B 7. 6.8 T 7 8. T.. B N 7 8 7. T. B 7. T 6. v θ /R / v θ

More information

DC electrical circuits

DC electrical circuits D elecicl cicuis hpe 8 lecomoive Foce Poenil Diffeences esisos in pllel nd seies icuis wih pcios Beies nd Geneos uen is poduced y pplying poenil diffeence coss conduco (V/). This poenil diffeence is se

More information

Using a Rotating DC Magnetic Field to Create an AC Magnetic Field

Using a Rotating DC Magnetic Field to Create an AC Magnetic Field Sfe Lvng Technooge Inc. 7 Cr Rod Wet, P.O. Box 27051, eph, ON N1L0A6, Cnd Te: 519-240-8735 pport@t.co www.t.co Ung Rottng DC Mgnetc Fed to Crete n AC Mgnetc Fed An octng or pnnng DC Mgnetc fed cn prodce

More information

stanchion paper roll mandrel base FIGURE P3-12 ramp

stanchion paper roll mandrel base FIGURE P3-12 ramp 1 MCHINE DESIGN - n Integrted pproch stnchion pper ro mndre se FIGURE -1 roem -7 rmp FIGURE -1 roem -8 1-ft grid -0 Run the computer mode CSE for Cse Study (on the CD-ROM in sever nguges) nd move the point

More information

Experiment 26 Refraction

Experiment 26 Refraction Expement 26 Refacton Advanced Readng: (Knght 4 th Edton) Chapte 34 secton 34-3 Equpment: 1 Plex-Ray 2 cokboads 2 potactos 2 30 cm ules Objectve: The object of ths expement s the phenomena of efacton. Theoy:

More information

PANEL-SERVICE CHT SCREW G U (4) PLATE-WALL CHT SCREW G U (2) PLATE-WALL CHT CHT SCREW

PANEL-SERVICE CHT SCREW G U (4) PLATE-WALL CHT SCREW G U (2) PLATE-WALL CHT CHT SCREW PNE-SEV -0-HT G-0-0U () PTE-W 9--HT G-0-0U () P SWITH-STEITE 0-0-HT ETI PTE-W 9--HT 9-0-HT G-0-0U () P PNE SM-VINY OVEE -0-XXX KET-0V ONNE,MOUNT -0-HT P- (ET ) ST PEP E SWITH-STEITE P- (PU) OVH P- (PU)

More information

REVIEW, pages

REVIEW, pages REVIEW, pges 510 515 6.1 1. Point P(10, 4) is on the terminl rm of n ngle u in stndrd position. ) Determine the distnce of P from the origin. The distnce of P from the origin is r. r x 2 y 2 Substitute:

More information

RF-N SHOWN RF-N RF-N12-B

RF-N SHOWN RF-N RF-N12-B 8 7 6 5 4 1 FE NGLES 1 O O O 1 4 F-N14-4-7 SHOWN EVISIONS EV. ZONE ESIPTION Y TE INITIL ELESE E SHEET JW J 1/1/00 0/1/01 OETE ITEM LLOONS & E NOTES LP 07//01 UPTE ITEMS 6-1, UPTE WG & FILE M 11/9/01 E

More information

ECEN326: Electronic Circuits Fall 2017

ECEN326: Electronic Circuits Fall 2017 ECEN36: Electonic Cicuits Fall 07 Lectue 4: Cascode Stages and Cuent Mios Sam Palemo Analog & Mixed-Signal Cente Texas A&M Univesity Announcements HW3 due 0/4 Exam 0/9 9:0-0:0 (0 exta minutes) Closed book

More information

CCAC SOUTH CAMPUS. COMPANY Engineering FILM/VIDEO ELECTRICAL UPGRADE

CCAC SOUTH CAMPUS. COMPANY Engineering FILM/VIDEO ELECTRICAL UPGRADE SOUTH MPUS FLM/VEO ELETRL UPRE OMPY 407 Sclp venue Johnstown, P 5904 Phone: 4-69-9300 onsultnts: FX: 4-69-930 750 LRTO RO (ROUTE 5) WEST MFFL, P 5-309 PROJET UMER: -S-003 Sel: Sel: Project dentifiction:

More information

Sinusoidal Steady State Analysis

Sinusoidal Steady State Analysis CHAPTER 8 Snusodl Stedy Stte Anlyss 8.1. Generl Approch In the prevous chpter, we hve lerned tht the stedy-stte response of crcut to snusodl nputs cn e otned y usng phsors. In ths chpter, we present mny

More information

Power Electronics (25) Please prepare your student ID card (with photo) on your desk for the attendance check.

Power Electronics (25) Please prepare your student ID card (with photo) on your desk for the attendance check. Depatment of Powe Electoncs and Electcal Dves Pof D ng Joachm Böcke Powe Electoncs 31032015 Suname Student numbe Fst name Couse of study Task (Ponts) 1 2 3 4 Total (100) Mak Duaton 120 mnutes Pemtted esouces

More information

RF-N SHOWN RF-N RF-N14-B RF-N RF-N12-B

RF-N SHOWN RF-N RF-N14-B RF-N RF-N12-B 8 7 6 5 4 1 F-N14-4-7 SHOWN EVISIONS EV. ZONE ESIPTION Y TE INITIL ELESE JW 1/1/00 E SHEET J 0/1/01 OETE ITEM LLOONS & E NOTES LP 07//01 UPTE ITEMS 6-1, UPTE W & FILE M 11/9/01 E E SSEMLY ETILS 1/4/0 F

More information

Maximum Power Dissipation W C

Maximum Power Dissipation W C PD- 57A INSULATED GATE BIPOLAR TRANSISTOR GA2SA6S Standard Speed IGBT Features C Standard : Optimized for minimum saturation voltage and low operating frequencies up to khz Lowest conduction losses available

More information

Week 5. Lecture Quiz 1. Forces of Friction, cont. Forces of Friction. Forces of Friction, final. Static Friction

Week 5. Lecture Quiz 1. Forces of Friction, cont. Forces of Friction. Forces of Friction, final. Static Friction Lectue Quiz 1 Week 5 Fiction (Chapte 5, section 8) & Cicula Motion (Chapte 6, sections 1-) You hae a machine which can acceleate pucks on fictionless ice. Stating fom est, the puck taels a distance x in

More information

eded: Materials ne 1/8 yard for sashing # /2 strip of orange for sash 3/8 yard for pumpkin border/backin 1/3 yard for border/binding #277

eded: Materials ne 1/8 yard for sashing # /2 strip of orange for sash 3/8 yard for pumpkin border/backin 1/3 yard for border/binding #277 Pumpkin Crow 13 X 14 Pillo w FREE PATTERNS Flowers in Pumpkin 17 X 0 Wll Hnging One Pumpkin Ptch pnel #770-88 Pumpkin ed: w Flowers in e Pumpkin Mterils needcro 1/8 yrd for sshing 17 pkin One X 0Ptc Pum

More information

DESIGN OF CONTINUOUS LAG COMPENSATORS

DESIGN OF CONTINUOUS LAG COMPENSATORS DESIGN OF CONTINUOUS LAG COMPENSATORS J. Pulusová, L. Körösi, M. Dúbrvská Institute of Robotics nd Cybernetics, Slovk University of Technology, Fculty of Electricl Engineering nd Informtion Technology

More information

Mesh and Node Equations: More Circuits Containing Dependent Sources

Mesh and Node Equations: More Circuits Containing Dependent Sources Mesh nd Node Equtions: More Circuits Contining Dependent Sources Introduction The circuits in this set of problems ech contin single dependent source. These circuits cn be nlyzed using mesh eqution or

More information

OPERATING, CALLING AND SIMPLEX FREQUENCIES. CALLING FREQUENCIES HF To 6M -- DX, DXpedition, SSB, CW, AM, FM, RTTY, SSTV

OPERATING, CALLING AND SIMPLEX FREQUENCIES. CALLING FREQUENCIES HF To 6M -- DX, DXpedition, SSB, CW, AM, FM, RTTY, SSTV Check Here If You Want To Open Links In A New Window OPERATING, CALLING AND SIMPLEX FREQUENCIES Compiled By AC6V Q UIC K FIND 160M TO 6 METERS VHF IO TA C O UNTY HUNTERS C O NSIDERATE O PERATO R FREQ GUIDE

More information

(1) Primary Trigonometric Ratios (SOH CAH TOA): Given a right triangle OPQ with acute angle, we have the following trig ratios: ADJ

(1) Primary Trigonometric Ratios (SOH CAH TOA): Given a right triangle OPQ with acute angle, we have the following trig ratios: ADJ Tringles nd Trigonometry Prepred y: S diyy Hendrikson Nme: Dte: Suppose we were sked to solve the following tringles: Notie tht eh tringle hs missing informtion, whih inludes side lengths nd ngles. When

More information

Myth or fact? You can increase the force of your solenoid by removing turns. (Part 2 of 3) Paul H. Schimpf Eastern Washington University

Myth or fact? You can increase the force of your solenoid by removing turns. (Part 2 of 3) Paul H. Schimpf Eastern Washington University Myth o fct? You cn incese the foce of you soenoid by emoving tuns. (Pt of ) Pu H. Schimpf Esten Wshington Univesity Fom Enegy to Foce Foce is the deivtive of enegy with espect to the position of the mtue.

More information

S1 TITAN Alloy LE Calibrations (P/N: )

S1 TITAN Alloy LE Calibrations (P/N: ) S1 TITAN 600-800 Alloy LE Calibrations () Low Alloy Si P S Ti V Cr Mn Fe Co Ni Cu Nb Mo W Pb Analysis range, % LLD-2 LLD-0.15 LLD-0.3 LLD - 0.1 0.05-1.8 LLD - 9 0.1-2.0 75-100 LLD - 8 LLD - 5 LLD - 5 LLD-

More information

DWG NO USE CLASS CC FUSES ONLY RATED 600V, 30A INCH TOLERANCES

DWG NO USE CLASS CC FUSES ONLY RATED 600V, 30A INCH TOLERANCES Y0 Y Y YK YK YK YK 9 0 J - 0 PI OETO 9 0 EXT SSEMLY E00 ISIO HISTOY ESIPTIO E Y PPE E SHIELE MOTO LE //0 JJS HGE I TEMITIO TYPE //0 JJS HIGH VOLTGE TEMILS (GETE TH 00 VOLTS) E LSS FES OLY TE 0, 0 F F F

More information

IRGBC30M Short Circuit Rated Fast IGBT

IRGBC30M Short Circuit Rated Fast IGBT INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, V GE = 5V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs.

More information

Reliable and proven Roller Followers series!

Reliable and proven Roller Followers series! olle Followes Ientifiction Numbe n Specifiction Exmple of n Ientifiction Numbe Sie plte Sel Oute ing The specifiction of olle Followes seies is inicte by the ientifiction numbe. In ition, fo ppliction

More information

Lecture 23. OUTLINE BJT Differential Amplifiers (cont d) Reading: Chapter

Lecture 23. OUTLINE BJT Differential Amplifiers (cont d) Reading: Chapter Lectue 23 OUTLINE BJT Diffeential Amplifies (cont d) ascode diffeential amplifies ommon mode ejection Diffeential pai with active load eading: hapte 0.4 0.6. EE05 Sping 2008 Lectue 23, Slide Pof. Wu, U

More information

EE Controls Lab #2: Implementing State-Transition Logic on a PLC

EE Controls Lab #2: Implementing State-Transition Logic on a PLC Objective: EE 44 - Controls Lb #2: Implementing Stte-rnsition Logic on PLC ssuming tht speed is not of essence, PLC's cn be used to implement stte trnsition logic. he dvntge of using PLC over using hrdwre

More information

IRGPH50FD2 Fast CoPack IGBT

IRGPH50FD2 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized for medium operating frequency (

More information

IRGPC20MD2 Short Circuit Rated Fast CoPack IGBT

IRGPC20MD2 Short Circuit Rated Fast CoPack IGBT INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized

More information

CRAWFORD BROADCASTING COMPANY

CRAWFORD BROADCASTING COMPANY CRAWFORD BROADCASTNG COMPANY KFMK -FM Rado 98 9 Medcal Towes Bldg Houston Texas 77 (7) 797-985 RADO STATON KFMK PROOF OF PERFORMANCE MEASUREMENTS Octobe 978 Ronald D Haney Chef Engnee Executve Offces Floutown

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) PD -9586 INSULTED GTE BIPOLR TRNSISTOR IRG4P50UPbF UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT

More information

Chapter 9 Cascode Stages and Current Mirrors

Chapter 9 Cascode Stages and Current Mirrors Chapte 9 Cascode Stages and Cuent Mios 9. Cascode Stage 9. Cuent Mios CH 9 Cascode Stages and Cuent Mios Boosted Output Impedances S O S m out E O E m out g g Bipola Cascode Stage [ g ( )] out m O O O

More information

Chapter 4 Integers and Number Theory

Chapter 4 Integers and Number Theory Chapte 4 Answes 15 Chapte 4 Intees and Nume Theo Suestions: Althouh it is possile to daw pictues fo the models used in the followin activities, encouae students to use two diffeent coloed squaes to epesent

More information

c The scaffold pole EL is 8 m long. How far does it extend beyond the line JK?

c The scaffold pole EL is 8 m long. How far does it extend beyond the line JK? 3 7. 7.2 Trigonometry in three dimensions Questions re trgeted t the grdes indicted The digrm shows the ck of truck used to crry scffold poles. L K G m J F C 0.8 m H E 3 m D 6.5 m Use Pythgors Theorem

More information

Section 16.3 Double Integrals over General Regions

Section 16.3 Double Integrals over General Regions Section 6.3 Double Integrls over Generl egions Not ever region is rectngle In the lst two sections we considered the problem of integrting function of two vribles over rectngle. This sitution however is

More information

Optical Properties of Metals 1

Optical Properties of Metals 1 Optal Propertes of Metals Energy n (ev) 8 6 4 - -4-6 -8-5 Germanum 5 - -4 Wave vetor L X st September, Mael Marder Defntons Penomenology of Metals Anomalous Sn Effet Plasmons Interband Transtons Brlloun

More information

CCMT 2012 Cutoff List of 4th Round

CCMT 2012 Cutoff List of 4th Round CCMT 2012 Cut-Off List of 4th round GATE Score Cutoff National Institute of Technology Agartala - (AG) Geotechnical Engineering - (GE) G1 322 281 190 National Institute of Technology Agartala - (AG) Structural

More information

Discussion #7 Example Problem This problem illustrates how Fourier series are helpful tools for analyzing electronic circuits. Often in electronic

Discussion #7 Example Problem This problem illustrates how Fourier series are helpful tools for analyzing electronic circuits. Often in electronic Discussion #7 Example Poblem This poblem illustates how Fouie seies ae helpful tools fo analyzing electonic cicuits. Often in electonic cicuits we need sinusoids of vaious fequencies But we may aleady

More information

Lecture 20. Intro to line integrals. Dan Nichols MATH 233, Spring 2018 University of Massachusetts.

Lecture 20. Intro to line integrals. Dan Nichols MATH 233, Spring 2018 University of Massachusetts. Lecture 2 Intro to line integrls Dn Nichols nichols@mth.umss.edu MATH 233, Spring 218 University of Msschusetts April 12, 218 (2) onservtive vector fields We wnt to determine if F P (x, y), Q(x, y) is

More information

Synchronous Generator Line Synchronization

Synchronous Generator Line Synchronization Synchronous Genertor Line Synchroniztion 1 Synchronous Genertor Line Synchroniztion Introduction One issue in power genertion is synchronous genertor strting. Typiclly, synchronous genertor is connected

More information

Transient Voltage Suppressors (TVS) Data Sheet

Transient Voltage Suppressors (TVS) Data Sheet Transient Suppressors (TVS) Data Sheet Features For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent

More information

TeSys protection components 0

TeSys protection components 0 , TeSys rotetion omonents 0 Therm-mgneti motor iruit-rekers GV2 ME nd GV2 P GV2 ME GV AX GV AD, AM, AN, AU, AS, AX GV AE 11 67,2 Bok GV AD, AM, AN Bok GV AU, AS, AX 10 46,7 9,3 9,3 81(1) GV2 ME GV2 ME3

More information

Section 17.2: Line Integrals. 1 Objectives. 2 Assignments. 3 Maple Commands. 1. Compute line integrals in IR 2 and IR Read Section 17.

Section 17.2: Line Integrals. 1 Objectives. 2 Assignments. 3 Maple Commands. 1. Compute line integrals in IR 2 and IR Read Section 17. Section 7.: Line Integrls Objectives. ompute line integrls in IR nd IR 3. Assignments. Red Section 7.. Problems:,5,9,,3,7,,4 3. hllenge: 6,3,37 4. Red Section 7.3 3 Mple ommnds Mple cn ctully evlute line

More information

IRG4PC40K Short Circuit Rated UltraFast IGBT

IRG4PC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 9.585B IRG4PC40K Short Circuit Rated UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit

More information

Example. Check that the Jacobian of the transformation to spherical coordinates is

Example. Check that the Jacobian of the transformation to spherical coordinates is lss, given on Feb 3, 2, for Mth 3, Winter 2 Recll tht the fctor which ppers in chnge of vrible formul when integrting is the Jcobin, which is the determinnt of mtrix of first order prtil derivtives. Exmple.

More information

3 EMC 3.1 SIMOVERT MASTERDRIVES EMC MASTERDRIVES EMC EN (VDE 0160 T100 IEC ) EN EN IEC 801 EN EMC

3 EMC 3.1 SIMOVERT MASTERDRIVES EMC MASTERDRIVES EMC EN (VDE 0160 T100 IEC ) EN EN IEC 801 EN EMC 3 EMC 3.1 ) ( EMC EMC EMC EN 61800-3 (VDE 0160 T100 IEC 1800-3) 1996 6 EN 55011 EN 50081 IEC 801 EN 50082 SIEMENS EMC Siemens Elecrical Drives Ltd. 6SE7085-0QX60 (AB ) 3-1 3.2 EMC 3.2.1 EMC? EMC EMC 2(7)

More information

AQA Level 2 Further mathematics Further algebra. Section 3: Inequalities and indices

AQA Level 2 Further mathematics Further algebra. Section 3: Inequalities and indices AQA Level Further mthemtics Further lgebr Sectio : Iequlities d idices Notes d Emples These otes coti subsectios o Iequlities Lier iequlities Qudrtic iequlities Multiplyig epressios The rules of idices

More information

MA900. General Description. Features. Multi-Loop Digital Temperature Controller MA900. Digital Communications. 4 channels Control.

MA900. General Description. Features. Multi-Loop Digital Temperature Controller MA900. Digital Communications. 4 channels Control. C900 C900 T OT OT T OT OT OT OT OT OT OT5 OT OT7 OT T C900 C900 T OT OT T OT OT OT OT OT OT OT5 OT OT7 OT T OT OT OT OT OT5 OT OT7 OT T ulti-oop igital Temperature Controller General escription The controls

More information

PD IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC

PD IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, Generation 4 IGBT design provides higher

More information

IRG4PH30K PD A. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 1200V. V CE(on) typ. = 3.

IRG4PH30K PD A. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 1200V. V CE(on) typ. = 3. PD -9580A IRG4PH30K INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs, V CC = 720V, T J = 25 C, Combines low conduction losses with high switching

More information

TRANSISTOR BIASING AND STABILIZATION

TRANSISTOR BIASING AND STABILIZATION TRANSISTOR BIASING AND STABILIZATION 4.1 NEED FOR TRANSISTOR BIASING: If the o/p signal must be a faithful reproduction of the i/p signal, the transistor must be operated in active region. That means an

More information

Inductances of coaxial helical conductors

Inductances of coaxial helical conductors Compute Appctos Eectc Egeeg Iuctces of co ec couctos stof Buk, Wojcec Mccńsk Poń Uvest of Tecoog 6-965 Poń, u. Potowo 3, e-m: Wojcec Mccńsk@put.po.p Twstg of couctos s commo use vous fes of eectc stumets

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) PD -91656C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve

More information

SAMPLE KYRIE. Dm (Em) Dm (Bm) (Bm) (G) (Em) (Bm) (D) Chri ste. ri e e. son. ri e e lé. Gm7 F (G) Gm7. (Bm) (Em7) (D) (Em7) (D) son. Chri ste.

SAMPLE KYRIE. Dm (Em) Dm (Bm) (Bm) (G) (Em) (Bm) (D) Chri ste. ri e e. son. ri e e lé. Gm7 F (G) Gm7. (Bm) (Em7) (D) (Em7) (D) son. Chri ste. KYRIE Capo 3: () m () m () m () m () m () () B e e (7) m7 lé () m () m lé son. Ky r e e () son. Chr ste SMPLE Text: raduale Romanum, 1974. Musc: Chant Mass; raduale Romanum, 1974; gutar acc. 1995, OCP.

More information

SMBJ5.0 THRU SMBJ440CA

SMBJ5.0 THRU SMBJ440CA SMBJ5.0 THRU SMBJ440CA SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Stand-off : 5.0-440 Volts Peak pulse power: 600 Watts 0.087 (2.20) 0.071 (1.80) 0.096(2.44) 0.084(2.13) SMB/DO-214AA 0.180(4.57) 0.160(4.06)

More information

Polar Coordinates. July 30, 2014

Polar Coordinates. July 30, 2014 Polr Coordintes July 3, 4 Sometimes it is more helpful to look t point in the xy-plne not in terms of how fr it is horizontlly nd verticlly (this would men looking t the Crtesin, or rectngulr, coordintes

More information

TV06B5V0-HF Thru. TV06B441-HF

TV06B5V0-HF Thru. TV06B441-HF TV65V-HF Thru. TV644-HF Working Peak voltage: 5. to 44Volts Power Dissipation: 6 Watts RoHS Device Halogen Free Features -Glass passivated chip. -6W peak pulse power capability with a /μs -waveform, repetitive

More information

CT LAB CIVIL-A FMHM OOPS(ARP) MATH-III EEC CE DRAWING CIVIL-B MATH-III FMHM BMBC EE-A NT(JP) PSD AEC(PD)

CT LAB CIVIL-A FMHM OOPS(ARP) MATH-III EEC CE DRAWING CIVIL-B MATH-III FMHM BMBC EE-A NT(JP) PSD AEC(PD) INDIRA GANDHI INSTITUTE OF TECHNOLOGY, SARANG, ( 3RD SEM, B.Tech/MCA. ) 2015 Rooms allotted for theory classes unless otherwise specified: BRANCH CHEM CIVIL-A CIVIL-B EE-A EE-B MECH-A MECH-B ETC+CSE METT

More information

Little Strummers. Thanksgiving Songs. Guitar Cours! Supplement. for children ages 6"10. for children ages 6-10

Little Strummers. Thanksgiving Songs. Guitar Cours! Supplement. for children ages 610. for children ages 6-10 Little Strummers hnksgiving Sgs Guitr Cours! Supplement children ges 6"10 children ges 610 Sgs complied rrnged by r rbe# hnksgiving Supplement Little Strummers. Since th supplement pcket of music, re no

More information

Roll No. B.Tech. SEM I (CS-11, 12; ME-11, 12, 13, & 14) MID SEMESTER EXAMINATION, ELECTRONICS ENGINEERING (EEC-101)

Roll No. B.Tech. SEM I (CS-11, 12; ME-11, 12, 13, & 14) MID SEMESTER EXAMINATION, ELECTRONICS ENGINEERING (EEC-101) F:/Academic/22 Refer/WI/ACAD/10 SHRI RAMSWAROOP MEMORIAL COLLEGE OF ENGG. & MANAGEMENT (Following Paper-ID and Roll No. to be filled by the student in the Answer Book) PAPER ID: 3301 Roll No. B.Tech. SEM

More information

Motilal Nehru National Institute of Technology Allahabad - (AL) Fluids Engineering - (FE) G

Motilal Nehru National Institute of Technology Allahabad - (AL) Fluids Engineering - (FE) G CCMT 2012 Cutoff List of First Round GATE Score Cutoff National Institute of Technology Agartala - (AG) Geotechnical Engineering - (GE) G1 367 330 256 National Institute of Technology Agartala - (AG) Structural

More information

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) PD 946E RG4P30U NSULTED GTE BPOLR TRNSSTOR UltraFast Speed GBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design

More information

N2-1. The Voltage Source. V = ε ri. The Current Source

N2-1. The Voltage Source. V = ε ri. The Current Source DC Cicuit nalysis The simplest cicuits to undestand and analyze ae those that cay diect cuent (DC). n this note we continue ou study of DC cicuits with the topics of DC voltage and cuent souces, the idea

More information

1 Trigonometric Functions

1 Trigonometric Functions Tigonometic Functions. Geomet: Cicles and Radians cicumf. = π θ Aea = π An angle of adian is defined to be the angle which makes an ac on the cicle of length. Thus, thee ae π adians in a cicle, so π ad

More information

KEY TELEPHONE UNIT 237-TYPE IDENTIFICATION, OPERATION, AND CONNECTIONS

KEY TELEPHONE UNIT 237-TYPE IDENTIFICATION, OPERATION, AND CONNECTIONS ELL SYSEM PACCES A&Co Standard SEC 518310407 ue 8, May 1974 KEY ELEPHE UN 237YPE DENFCA, OPEA, AND CNECS 1. GENEAL 1.01 hi ection i reiued to: Delete Speakerphone Sytem No. la and lal connection Add Speakerphone

More information

Chapter 6 Kinetic energy and work

Chapter 6 Kinetic energy and work Chpter 6 Kc energy nd wor I. Kc energy. II. or. III. or - Kc energy theorem. IV. or done by contnt orce - Grttonl orce V. or done by rble orce. VI. Power - Sprng orce. - Generl. D-Anly 3D-Anly or-kc Energy

More information

Investigation. Name: a About how long would the threaded rod need to be if the jack is to be stored with

Investigation. Name: a About how long would the threaded rod need to be if the jack is to be stored with Think Unit bout 6 This Lesson Situation 1 Investigation 1 Name: Think about the design and function of this automobile jack. Use the uto Jack custom tool to test ou ideas. a bout how long would the theaded

More information

LECTURE 9: QUADRATIC RESIDUES AND THE LAW OF QUADRATIC RECIPROCITY

LECTURE 9: QUADRATIC RESIDUES AND THE LAW OF QUADRATIC RECIPROCITY LECTURE 9: QUADRATIC RESIDUES AND THE LAW OF QUADRATIC RECIPROCITY 1. Bsic roerties of qudrtic residues We now investigte residues with secil roerties of lgebric tye. Definition 1.1. (i) When (, m) 1 nd

More information

General Specifications

General Specifications General Specifications MW100-E-1X/X/X/S15 Special Edition 1. MW100/S15 Hardware Specification MW100 Logging type Mainly standalone measurement and distributed remote measurement Style No. S3 Maximum number

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications 2.5kV, 60s insulation voltage Industry-benchmark switching losses

More information

Discrepancies Between Euclidean and Spherical Trigonometry. David Eigen

Discrepancies Between Euclidean and Spherical Trigonometry. David Eigen Discepancies Between Euclidean and Spheical Tigonomety David Eigen 1 Non-Euclidean geomety is geomety that is not based on the postulates of Euclidean geomety. The five postulates of Euclidean geomety

More information

UART Deta ls. Background. Interface. Data Transm ss on Control

UART Deta ls. Background. Interface. Data Transm ss on Control Background UART Deta ls A Un versal Asynchronous Rece ver/transm tter (UART) s used to mplement ser al commun cat on. It s a standard p ece of hardware, although manufacturers make sl ghtly d fferent vers

More information

The Dividend Discount Model with Multiple Growth Rates of Any Order for Stock Evaluation. Abdulnasser Hatemi-J and Youssef El-Khatib

The Dividend Discount Model with Multiple Growth Rates of Any Order for Stock Evaluation. Abdulnasser Hatemi-J and Youssef El-Khatib he vdend scount Mode wth Mutpe Gowth Rates of ny Ode fo Stoc Evauaton bdunasse Hatem-J and Youssef E-Khatb UE Unvesty -n OBox 555 Unted ab Emates E-mas: Hatem@uaeuacae and Youssef_Ehatb@uaeuacae bstact

More information

Triple-spoke compared with Elliptical-cell Cavities

Triple-spoke compared with Elliptical-cell Cavities Triple-spoke compared with Elliptical-cell Cavities Ken Shepard - ANL Physics Division 2th International Workshop on RF Superconductivity Argonne National Laboratory Operated by The University of Chicago

More information

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) PD -957 INSULTED GTE BIPOLR TRNSISTOR IRG4PC4SPbF Standard Speed IGBT Features C Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 IGBT design provides

More information

PD IRG4PC50WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC. 1

PD IRG4PC50WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC.  1 INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power

More information

UNIT 11 TWO-PERSON ZERO-SUM GAMES WITH SADDLE POINT

UNIT 11 TWO-PERSON ZERO-SUM GAMES WITH SADDLE POINT UNIT TWO-PERSON ZERO-SUM GAMES WITH SADDLE POINT Structure. Introducton Obectves. Key Terms Used n Game Theory.3 The Maxmn-Mnmax Prncple.4 Summary.5 Solutons/Answers. INTRODUCTION In Game Theory, the word

More information

DV-72 / DV6-72 DA-72 / DA-96

DV-72 / DV6-72 DA-72 / DA-96 ER-NA INDEX ERA- COBO REACTIVE POWER FACTOR CONTROLLER E-05 / E-09 DIGITAL ULTIETER DV-7 / DV6-7 DIGITAL VOLTETERS DA-7 / DA-96 DIGITAL APERETERS DA-7S / DA-96S DIGITAL ADJUSTABLE APERETERS DF-7 / DF-96

More information

Analysis of Occurrence of Digit 0 in Natural Numbers Less Than 10 n

Analysis of Occurrence of Digit 0 in Natural Numbers Less Than 10 n meican Intenational Jounal of Reseach in Fomal, pplied & Natual Sciences vailable online at http://www.iasi.net ISSN (Pint): 2328-3777, ISSN (Online): 2328-3785, ISSN (CD-ROM): 2328-3793 IJRFNS is a efeeed,

More information

BILANCIO ELETTRICO. Document Number 100PFP-00-ELE-EL CLIENT GAS PLUS STORAGE. Rev. Date POGGIOFIORITO GAS FIELD V00 PLANT V

BILANCIO ELETTRICO. Document Number 100PFP-00-ELE-EL CLIENT GAS PLUS STORAGE. Rev. Date POGGIOFIORITO GAS FIELD V00 PLANT V LENT GA PLU TOAGE PFP--ELE-EL- LOATON POGGOFOTO GA FELD ev. V -- GA TOAGE heet of BLANO ELETTO V -- ev. Description ompiled hecked Approval lient's Approval PFP--ELE-EL-_V_Bilancio elettrico.xls LENT GA

More information

SOFT-SWITCHING ACTIVE POWER FILTER FOR REDUCING HARMONIC CURRENT IN SYSTEM WITH NON-LINIER LOAD

SOFT-SWITCHING ACTIVE POWER FILTER FOR REDUCING HARMONIC CURRENT IN SYSTEM WITH NON-LINIER LOAD VO. 2, NO. 8, SEPTEMBER 207 ISSN 89-6608 ARPN Jounal of Engneeng and Appled Scences 2006-207 Asan Reseach Publshng Netwok ARPN). All ghts eseved. www.apnjounals.com SOFT-SWITHING ATIVE POWER FITER FOR

More information

GRADE 6 FLORIDA. Division WORKSHEETS

GRADE 6 FLORIDA. Division WORKSHEETS GRADE 6 FLORIDA Division WORKSHEETS Mental division stategies invese opeations As we know, multiplication and division ae invese opeations. 8 9 = 7 This means they do the evese of each othe: 7 9 = 8 We

More information

Halton (Milton) LRO #20

Halton (Milton) LRO #20 Miscellaneous KH Bankruptcy April 7, 1921 Sept 18, 1922 1 1452 BL Bylaws Nov 13, 1855 Sept 23, 1960 1 778 DH Deposits Oct 31, 1894 Sept 30, 1966 1 5088 GR General Register Jan 9, 1866 Sept 1, 1955 1 8276

More information

Features. n-channel TO-247AC. 1

Features. n-channel TO-247AC.   1 INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides

More information

n-channel TO-220AB 1

n-channel TO-220AB   1 PD -949A IRG4BC3KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, t sc =µs,

More information

Features. n-channel TO-247AC. 1

Features. n-channel TO-247AC.  1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @36V V CE (start), T J = 25 C, V GE = 5V Combines low conduction

More information

Steps to Completion. A Word about Sanding and Cleaning

Steps to Completion. A Word about Sanding and Cleaning Supplement ES/IV Intenl Rue Bellcnk Assembly S.1 Intuctin This supplement, the ES/IV Intenl Rue Bellcnk Assembly, eplces the instuctins pvie in INS-RD-066. This ls eplces the extenl ue cble cntls escibe

More information

PD IRG4PC30WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC. 1

PD IRG4PC30WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC.  1 INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power

More information

HST-SE581 SERVICE MANUAL CASSETTE DECK RECEIVER. AEP Model E Model Australian Model SPECIFICATIONS

HST-SE581 SERVICE MANUAL CASSETTE DECK RECEIVER. AEP Model E Model Australian Model SPECIFICATIONS HT-E EVICE MANUA AE Model E Model Australian Model This set is the tuner deck and amplifier section in EN-T. Manufactured under license from Dolby aboratories icensing Corporation. DOY and the double-d

More information

VTU NOTES QUESTION PAPERS NEWS VTU RESULTS FORUM BOOKSPAR ANDROID APP UNIT-4

VTU NOTES QUESTION PAPERS NEWS VTU RESULTS FORUM BOOKSPAR ANDROID APP UNIT-4 NTENN & PROPGTION 6EC6 1EC6 UNIT- Unit : Loop and Hon ntenna: Intoduction, small loop, compaison of fa field of small loop and shot dipole, loop antenna geneal case, fa field pattens of cicula loop, adiation

More information

600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SMB(DO-214AA) PACKAGE. SMBJ Series WILLAS ELECTRONIC CORP.

600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SMB(DO-214AA) PACKAGE. SMBJ Series WILLAS ELECTRONIC CORP. Working : 5.0 to 440 V Peak Pulae Power: 600 W SMB (DO-214AA) Features Glass passivated chip 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle):0.01 % Low leakage

More information

REGISTRATION INTERFACE BRIDGED MULTIPLE TIP AND RING ARRANGEMENTS

REGISTRATION INTERFACE BRIDGED MULTIPLE TIP AND RING ARRANGEMENTS BELL SYSEM PCCES & Co Provisional SECON -00-10 ssue, pril 1 1. GENEL 1.01 his section provides information on the standard wiring arrangements to be provided under the Federal Communications Commission

More information

Direct Linear Transformation & Computer Vision Models

Direct Linear Transformation & Computer Vision Models Diet inea ansfomation & Comute Vision Models Chate -A4 CE : Digital Photogammeti Sstems Aman F. Habib Photogammet Vs. Comute Vision Conventional Photogammet is foug on eise geometi infomation etation fom

More information

Low-Complexity Time-Domain SNR Estimation for OFDM Systems

Low-Complexity Time-Domain SNR Estimation for OFDM Systems Low-Complexity Time-Domain SR Estimation fo OFDM Systems A. jaz, A.B. Awoseyila and B.G. Evans A low-complexity SR estimation algoithm fo OFDM systems in fequency-selective fading channels is poposed.

More information

Question 1 TELE4353. Question 1, cnt d. What is CDMA? Direct Sequence Spread Spectrum System Model. What is direct sequence CDMA?

Question 1 TELE4353. Question 1, cnt d. What is CDMA? Direct Sequence Spread Spectrum System Model. What is direct sequence CDMA? TELE45 Mobie nd Steite Couniction Systes Tutori 5 week - S 4 Question A ceur obie couniction syste is using direct sequence code diision utipe ccess CDMA technique with coherent binry phse shift keying

More information

T J Operating Junction and -55 to +150 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.

T J Operating Junction and -55 to +150 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (0.063 in. (1. PD - 94069 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30S-S Standard Speed IGBT Features Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design

More information

Electromagnets with Connection Terminal

Electromagnets with Connection Terminal Eectromgnets Eectromgnets wth Connecton Termn Modes Q, R, RI, F DICTATOR eectromgnets re used n hod-open systems to keep fre protecton doors open. Eectromgnets of the rnges Q, R, RI nd F ncude mgnets wth

More information

n-channel D 2 Pak 1

n-channel D 2 Pak   1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @360V V CE (start),, V GE = 5V Combines low conduction losses

More information

Features. n-channel TO-247AC. 1

Features. n-channel TO-247AC.   1 INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides

More information