MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
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1 PRELIMINARY MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 50 MHz to 6 GHz Surface Mount SP2T Switch 5mm x 8mm x 2.5mm Industry Leading Average Power Handling 125W CW High Voltage rating greater than 500V support Higher RF Peak Power - >550W Low Insertion (< 0.25 db) and High IP3 (>65dBm) High Linearity RoHS Compliant Description: The MSW2T-200X-199series SP2T surface mount High Power PIN Diode switches are available in three operating frequency bands: MSW2T operates from 50 MHz to 1 GHz; MSW2T operates from 400 MHz to 4 GHz, and MSW2T operates from 2 GHz to 6 GHz. The MSW2T-200X-199 Series of high power switches leverage high reliability hybrid manufacturing processes which yield proven superior performance to both MMIC and Glass Carrier based technologies. The hybrid design approach permits precise PIN Diode selection to optimize RF performance while maintaining competitive cost targets. The small form factor (8mm x 5mm x 2.5mm) offers world class power handling, low insertion loss, and superior intermodulation performance exceeding all competitive technologies. The MSW200X-199 family of asymmetrical switches are tailored to minimize Transmit to Antenna loss while maximizing Transmit to Receive isolation. Extremely low thermal resistance (<9.5 o C/W) of the PIN Diodes enables reliably handling 51 dbm CW and RF Peak Power of 53 dbm in cold switching applications at ambient temperatures of 85 o C. Typical Applications: Radar T/R Modules Switch Bank Filters Mil-Com Radios RFuW Engineering, Ltd. sales@rfuw-engineering.com 1
2 The MSW2T-200X-199 series of High Power SP2T switches are intended for use in high power, high reliability, mission critical applications across the HF to C Band frequency ranges. The manufacturing process has been proven through decades of extensive use in high reliability applications. ESD and Moisture Sensitivity Level Rating: The MSW2T-200X-199 family of SP2T switches are fully RoHS compliant and carry an ESD ratings of Class 1C, Human Body Model (HBM) and a moisture sensitivity rating of MSL 1. MSW2T-200X-199 Schematic MSW2T Electrical Zo = 50Ω; Ta = +25 C Parameter Symbol Test Condition Min Typ Max Value Value Value Units Frequency F 50 1,000 MHz Tx-Ant Insertion IL (Tx) Condition db Tx-Ant Return RL (Tx) Condition db Ant-Rx Insertion IL (Rx) Condition db Ant-Rx Return RL (Rx) Condition db Tx-Rx Isolation ISO (Rx) Condition db Rx-Tx Isolation ISO (Tx) Condition db Tx CW Incident P inc (TxCW) Condition 1, 1.5:1 source & load VSWR 51 dbm Rx CW Incident P inc (RxCW) Condition 2, 1.5:1 source & load VSWR 43 dbm Tx Peak Incident Condition 1, 10 us pulse width, 1% duty P Power inc (Pk) 57 dbm (Note 2) cycle, 1.5:1 source & load VSWR (IL) Switching Time t SW 10% to 90% RF Voltage 1 2 usec Input 3 rd Order IIP3 F Intercept Point 1 =2.0GHz, F 2 =2.01GHz, P 1 =P 2 = 40dBm dbm RFuW Engineering, Ltd. sales@rfuw-engineering.com 2
3 MSW2T Electrical Zo = 50Ω; Ta = +25 C Parameter Symbol Test Condition Min Typ Max Value Value Value Units Frequency F 400 4,000 MHz Tx-Ant Insertion IL (Tx) Condition db Tx-Ant Return RL (Tx) Condition db Ant-Rx Insertion IL (Rx) Condition db Ant-Rx Return RL (Rx) Condition db Tx-Rx Isolation ISO (Rx) Condition db Rx-Tx Isolation ISO (Tx) Condition db Tx CW Incident P inc (TxCW) Condition 1, 1.5:1 source & load VSWR 51 dbm Rx CW Incident P inc (RxCW) Condition 2, 1.5:1 source & load VSWR 43 dbm Tx Peak Incident Condition 1, 10 us pulse width, 1% duty P Power inc (Pk) (Note 2) cycle, 1.5:1 source & load VSWR (IL) 57 dbm Switching Time t SW 10% to 90% RF Voltage usec Input 3 rd Order Intercept Point IIP3 F 1 =2.0GHz, F 2 =2.01GHz, P 1 =P 2 = 40dBm dbm MSW2T Electrical Zo = 50Ω; Ta = +25 C Parameter Symbol Test Condition Min Typ Max Value Value Value Units Frequency F GHz Tx-Ant Insertion IL (Tx) Condition db Tx-Ant Return RL (Tx) Condition db Ant-Rx Insertion IL (Rx) Condition db Ant-Rx Return RL (Rx) Condition db Tx-Rx Isolation ISO (Rx) Condition db Rx-Tx Isolation ISO (Tx) Condition db Tx CW Incident P inc (TxCW) Condition 1, 1.5:1 source & load VSWR 51 dbm Rx CW Incident P inc (RxCW) Condition 2, 1.5:1 source & load VSWR 43 dbm Tx Peak Incident Condition 1, 10 us pulse width, 1% duty P Power inc (Pk) (Note 2) cycle, 1.5:1 source & load VSWR (IL) 57 dbm Switching Time t SW 10% to 90% RF Voltage usec Input 3 rd Order Intercept Point IIP3 F 1 =2.0GHz, F 2 =2.01GHz, P 1 =P 2 = 40dBm dbm RFuW Engineering, Ltd. sales@rfuw-engineering.com 3
4 Control Truth Table for MSW2T-200X-199 +V cc1 = 5V and +V cc2 = 28V ( unless otherwise noted) Condition Ant Tx Path Ant Rx Path Tx Bias ANT Bias Rx Bias B1 Bias Condition 1 Low Isolation -100 ma +100 ma V +25 ma Condition 2 Isolation Low +28 V +100 ma -100 ma, 0 V +28 V Notes: 1) Switching time from 50% TTL to 10% or 90% RF Voltage is a function of the PIN diode driver circuit performance as well as the characteristic of the PIN diode. An RC (current spiking network) is used on the driver circuit output to provide a large transient current spike to rapidly remove stored charge from the PIN diode s intrinsic layer. Typical component values are :R = 50 to 220Ω and C = 470 to 1,000 pf. 2) PIN diode minimum reverse DC voltage (V HIGH ) is used to maintain high resistance in the OFF PIN diode state and is determined by RF frequency, incident power, duty cycle, characteristic impedance and VSWR as well by the characteristics of the PIN diode. The recommended minimum value of the reverse bias voltage (V HIGH ) value is provided in the Min Reverse Bias Voltage Table shown below. RF Bias Network Recommended Component Values Part Number Operating Frequency (MHz) DC Blocking Capacitors Inductors RF Bypass Capacitors MSW2T , uf 4.7 uh 0.1 uf MSW2T , uf 82 nh 270 pf MSW2T ,000 6,000 22uF 33 nh 33 pf MSW2T-200X-199 Absolute Maximum T A = +25 o C(unless otherwise denoted) Parameters Conditions Absolute Maximum Value Forward Current Ant, Tx or Rx Port 250mA Forward Current DC Port 150mA Reverse Voltage Tx or Rx Port 125V Reverse Voltage DC Port 125V Forward Diode Voltage I F = 250mA 1.2V- Operating Temperature -65 o C to o C Storage Temperature -65 o C to o C Junction Temperature +175 o C Assembly Temperature 260 o C for 10 sec Source & Load VSWR = 1.5:1, CW Incident Power Handling TCASE = 85 o C, cold switching Tx or Antenna Port ( Note 1) 50 dbm CW Incident Power Handling Rx or Antenna Port ( Note 1) Peak Incident Power Handling Tx or Antenna Port (Note 1) Notes: Source & Load VSWR = 1.5:1, T CASE = 85 o C, cold switching Source & Load VSWR = 1.5:1, TCASE= 85oC, cold switching, Pulse Width = 10 us, Duty Cycle = 1% 43 dbm 1) Backside RF, DC and Thermal Ground area of device must be completely solder attached to RF circuit board vias for proper electrical and thermal circuit grounding. RFuW Engineering, Ltd. sales@rfuw-engineering.com 4
5 MSW2T-200X-199 Minimum Reverse Bias Voltage Table Frequency of Operation (MHz) Part Number ,000 1,000 4,000 >4,000 MSW2T V 110V 85V 55V 28V N/A MSW2T N/A N/A 110V 85V 55V 28V MSW2T N/A N/A N/A N/A 28V 28V Note: N/A denotes an operating frequency outside the normal switch operating frequency range. MSW2T Small Signal Parametric Performance: MSW2T : TX ANT Insertion and ANT-RX Isolation RFuW Engineering, Ltd. 5
6 MSW2T : ANT RX Insertion and TX-ANT Isolation MSW2T : Small Signal Parametric Performance: MSW2T : TX-ANT Insertion and RX-TX Isolation RFuW Engineering, Ltd. 6
7 MSW2T : ANT-RX Insertion and TX-RX Isolation MSW2T Small Signal Parametric Performance: MSW2T : TX-ANT Insertion and ANT-RX Isolation RFuW Engineering, Ltd. 7
8 MSW2T : ANT-RX Insertion and TX-ANT Isolation Assembly Instructions The MSW2T-200X-199 family of High Power Switches are available in either tube or Tape & Reel format. The MSW2T-200X-199 may be attached to the printed circuit card using solder reflow procedures using either RoHS or Sn63/ Pb37 type solders per the Table and Temperature Profile Graph shown below: Profile Parameter Sn-Pb Assembly Technique RoHS Assembly Technique Average ramp-up rate (T L to 3 o C/sec (max) 3 o C/sec (max) T P ) Preheat Temp Min (T smin ) Temp Max (T smax ) Time ( min to max) (t s ) 100 o C 150 o C sec 100 o C 200 o C sec T smax to T L Ramp up Rate 3 o C/sec (max) Peak Temp (T P ) 225 o C +0 o C / -5 o C 260 o C +0 o C / -5 o C Time within 5 o C of Actual Peak Temp (T P ) 10 to 30 sec 20 to 40 sec Time Maintained Above: Temp (T L ) Time (t L ) 183 o C 60 to 150 sec 217 o C 60 to 150 sec Ramp Down Rate 6 o C/sec (max) 6 o C/sec (max) Time 25 o C to T P 6 minutes (max) 8 minutes (max) RFuW Engineering, Ltd. sales@rfuw-engineering.com 8
9 Solder Re-Flow Time-Temperature Profile MSW2T-200X-199 SP2T Package Outline Drawing RFuW Engineering, Ltd. 9
10 Note: Metalized area on backside is the RF, DC and Thermal ground. In user s end application this surface temperature must be managed to meet the power handling requirements. Thermal Design Considerations: The design of the MWT-200X-199 family of High Power Switches permits the maximum efficiency in thermal management of the PIN Diodes while maintaining extremely high reliability. Optimum switch performance and reliability of the switch can be achieved by the maintaining the base ground surface temperature of less than 85 o C. Recommended RF Circuit Solder Footprint for the MSW2T-200X-199 RFuW Engineering, Ltd. sales@rfuw-engineering.com 10
11 Part Number Ordering Details: MSW2T MSW2T TR MSW2T MSW2T TR MSW2T MSW2T TR Part Number Tube Tape & Reel (250 pcs) Tube Tape & Reel (250 pcs) Tube Tape & Reel (250 pcs) Packaging RFuW Engineering, Ltd. 11
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MASW P. SURMOUNT PIN Diode Switch Element with Thermal Terminal. Features. Description. Ordering Information 2.
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Product Specification PE42851
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MADP Solderable AlGaAs Flip Chip PIN. Features. Chip Dimensions. Description. Applications
Features Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation Polyimide Scratch
Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
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Product Specification PE42850
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Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
High Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12.0 GHz ADRF5040
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AWL a/n/ac Power Amplifier, LNA and Tx/Rx Switch DATA SHEET - Rev 2.0
FEATURES Supports emerging 802.11ac high-data rate standard Fully integrated FEIC including 5GHz Power Amplifier, Low Noise Amplifier with Bypass mode and SP2T TX/RX Switch
Features. FREQUENCY 900MHz 1950MHz 2450MHz NF (db) NF (db) IIP3 (dbm) GAIN (db)
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RFFM4503 4.9GHz to 5.85GHz 802.11a/n/ac Wi-Fi Front End Module The RFFM4503 provides a complete integrated solution in a single front end module (FEM) for Wi-Fi 802.11a/n/ac systems. The ultrasmall factor
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Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Low loss broadband performance High isolation Non-reflective design Integrated 3:8 TTL decoder Pb-free RoHs compliant 4x4 SMT package Description The CMD236C4 is a broadband
CMOS 5GHz WLAN ac RFeIC WITH PA, LNA AND SPDT
CMOS 5GHz WLAN 802.11ac RFeIC WITH PA, LNA AND SPDT RX LEN 16 RXEN ANT 15 14 13 12 11 Description RFX8051 is a highly integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit) which incorporates
Features. Parameter Frequency Min. Typ. Max. Units. Return Loss Off State DC - 20 GHz 13 db
Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Hybrids Test Instrumentation SATCOM & Sensors Functional Diagram Features Broadband Performance: DC
1 MHz to 2.7 GHz RF Gain Block AD8354
Data Sheet FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply stable Noise figure: 4.2
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DATA SHEET SE2432L: 2.4 GHz Smart Energy/ZigBee Front End Module. Product Description. Applications
Applications Smart Meters In-home appliances Smart thermostats Features Integrated PA with up to 24 dbm output power Integrated LNA with programmable bypass Integrated antenna switching with Tx and Rx
RF5187. RoHS Compliant & Pb-Free Product Typical Applications. 2.14GHz UMTS Systems. PCS Communication Systems Digital Communication Systems
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Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
![Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V](/thumbs/90/101370216.jpg "Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V")
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.