MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
|
|
- Augustus Morton
- 5 years ago
- Views:
Transcription
1 RELEASED MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 5 MHz to 6 GHz Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm Industry Leading Average Power Handling: 1W CW High RF Peak Power: 55W Low Insertion Loss: <.25 db High IP3 >65 dbm High Linearity RoHS Compliant Description: The MSW2T-23X-192series SP2T surface mount High Power PIN Diode switches are available in three operating frequency bands: MSW2T operates from 5 MHz to 1 GHz; MSW2T-231 operates from 4 MHz to 4 GHz, and MSW2T operates from 2 GHz to 6 GHz. The MSW2T-23X-192 Series of high power switches leverage high reliability hybrid manufacturing processes which yield proven superior performance relative to both MMIC and Glass Carrier based technologies. The hybrid design approach permits precise PIN Diode selection to optimize RF performance while maintaining competitive cost targets. The small form factor (8mm x 5mm x 2.5mm) offers world class power handling, low insertion loss, and superior intermodulation performance exceeding all competitive technologies. Typical Applications: Radar T/R Modules Switch Bank Filters Mil-Com Radios The MSW2T-23X-192 series of High Power SP2T switches are intended for use in high power, high reliability, mission critical applications across the HF to C Band frequency ranges. The manufacturing process has been proven through years of extensive use in high reliability applications. Wei Bo Associates, Ltd. sales@weiboassociates.com.hk 1
2 RELEASED MSW2T-23X-192 Rev 1.2 ESD and Moisture Sensitivity Level Rating: The MSW2T-23X-192 family of SP2T switches are fully RoHS compliant. They possess an ESD rating of Class 1C, Human Body Model (HBM) and a moisture sensitivity rating of MSL 1. MSW2T-23X-192 Schematic MSW2T Electrical Zo = 5Ω; Ta = +25 C Parameter Symbol Test Conditions Min Typical Max Units Frequency F 5 1, MHz or Insertion Loss IL Bias State 2: port J to J2.3.4 db or Return Loss or Isolation RL ISO Bias State 2: port J to J db Bias State 2: port J to J db CW Incident Power Peak Incident Power Switching Speed Input 3 rd Order Intercept Point P inc (CW) P inc (Pk) t sw IIP3 1.5:1 Source & Load VSWR 1.5:1 Source & Load VSWR; pw = 1 us, duty cycle = 1% (1%-9%) RF Voltage TTL rep rate = 1 khz F1 = 5 MHz F2 = 51 MHz P1 = P2 = +1 dbm Measured on path biased to low loss state 5 51 dbm 57 dbm 75 1, ns 6 65 dbm Wei Bo Associates HK, Ltd. sales@weiboassociates.com.hk 2
3 RELEASED MSW2T-23X-192 Rev 1.2 MSW2T Electrical Zo = 5Ω; Ta = +25 C Parameter Symbol Test Conditions Min Typical Max Units Frequency F 4 4, MHz or Insertion Loss IL.4.6 db Bias State 2: port J to J2 or Return Loss or Isolation CW Incident Power Peak Incident Power Switching Speed Input 3 rd Order Intercept Point RL ISO P inc (CW) P inc (Pk) Ts IIP3 Bias State 2: port J to J db Bias State 2: port J to J db 1.5:1 Source & Load VSWR 1.5:1 Source & Load VSWR; pw = 1 us, duty cycle = 1% (1%-9%) RF Voltage TTL rep rate = 1 khz F1 = 2, MHz F2 = 2,1 MHz P1 = P2 = +1 dbm Measured on path biased to low loss state 5 51 dbm 57 dbm 75 1, ns 6 65 dbm MSW2T Electrical Zo = 5Ω; Ta = +25 C Parameter Symbol Test Conditions Min Typical Max Units Frequency F 2 6 GHz or Insertion Loss IL.6.8 db Bias State 2: port J to J2 or Return Loss or Isolation CW Incident Power Peak Incident Power Switching Speed Input 3 rd Order Intercept Point RL ISO Pinc (CW) P inc (Pk) Ts IIP3 Bias State 2: port J to J db Bias State 2: port J to J2 1.5:1 Source & Load VSWR 1.5:1 Source & Load VSWR; pw = 1 us, duty cycle = 1% (1%-9%) RF Voltage TTL rep rate = 1 khz F1 = 2, MHz F2 = 2,1 MHz P1 = P2 = +4 dbm -5 ma (ON) +25 ma (OFF) db 5 51 dbm 57 dbm 75 1, ns 6 65 dbm Wei Bo Associates HK, Ltd. sales@weiboassociates.com.hk 3
4 RELEASED MSW2T-23X-192 Rev 1.2 Control Conditions Table Test Conditions B1 B2 J J1 J2 State 1 State 2 in Low Insertion Loss in Isolation in Isolation in Low Insertion Loss V = V HIGH, V = V, I = ma I = -25 ma V = V, V = V HIGH, I = -25mA I = ma V = ~.9V, V = ~.9V, I = +1mA I = +1mA V = V, V = V HIGH, I = -1 ma I = 25 ma V = V HIGH, V = V, I = 25mA I = -1mA Notes: 1) Switching time from 5% TTL to 1% or 9% RF Voltage is a function of the PIN diode driver circuit performance as well as the characteristic of the PIN diode itself. An RC (current spiking network) is used on the driver circuit output to provide a large transient current spike to rapidly remove stored charge from the PIN diode. Typical component values are : R = 5 to 22Ω and C = 47 to 1, pf. 2) PIN diode minimum reverse DC voltage (V HIGH) is used to maintain high resistance in the OFF PIN diode state and is determined by RF frequency, incident power, duty cycle, characteristic impedance and VSWR as well by the characteristics of the PIN diode. The recommended minimum value of the reverse voltage bias (V HIGH) values are provided in the Minimum Reverse Bias Voltage Table shown below. Control Truth Table for MSW2T-23X-192 +V cc1 = 5V and +V cc2 = 28V ( unless otherwise noted) Port J J1 Port J J2 Bias: J1 (Notes: 1 & 2) Low Loss Isolation V = V I = -1mA Isolation Low Loss V = V HIGH I = 25mA Bias: J2 (Notes: 1 & 2) V = V HIGH I = 25mA V = V I = -1mA B1 (Notes: 1 & 2) V = V HIGH I= ma V = V I = -25mA B2 (Notes: 1 & 2) V = V I = -25mA V = V HIGH I = ma J (Notes 1 & 2) V=~.9V I = +1mA V=~.9V I = +1mA Notes: 1) 28 V V HIGH 125V 2) PIN diode min reverse DC voltage (VHIGH) to maintain high resistance state in the OFF PIN diode is determined by RF frequency. Incident power, duty cycle, characteristic impedance and VSWR as well as by characteristics of the diode. The recommended min reverse bias voltage (VHIGH) values are provided in the Min Reverse Bias Voltage Table of this data sheet. MSW2T-23X-192 Minimum Reverse Bias Voltage Table Frequency of Operation (MHz) Part Number , 1, 4, >4, MSW2T V 11V 85V 55V 28V N/A MSW2T N/A N/A 11V 85V 28V 28V MSW2T N/A N/A N/A 85V 55V 28V Note: N/A denotes an operating frequency outside the normal switch operating frequency range. Wei Bo Associates HK, Ltd. sales@weiboassociates.com.hk 4
5 Insertion Loss (db) RELEASED MSW2T-23X-192 Rev 1.2 MSW2T-23X-192 Absolute Maximum T A = +25 o C(unless otherwise denoted) Parameters Conditions Absolute Maximum Forward Current J, J1 & J2 25mA Forward B1 or B2 15 ma Reverse Voltage J, J1, J2, B1 B2 125V Forward Diode Voltage I F =25mA 1.2V Operating Temperature -55 o C to +125 o C Storage Temperature -65 o C to +15 o C Junction Temperature +175 o C Assembly Temperature T = 1 seconds +26 o C CW Incident Power Handling J, J1, J2 (note 1) Source & Load VSWR = 1.5 : 1 (Cold Switching) 5 dbm Peak Incident Power Handling J, J1, J2 Total Dissipated RF & DC Power (Cold Switching) See Notes below: 1 & 2 T CASE = 85 o C Source & Load VSWR = 1.5 : 1 T CASE = 85 o C, cold switching, pulse width = 1 us and duty cycle = 1% T CASE = 85 o C, cold switching 57 dbm 8 W Notes: 1) Backside RF, DC and Thermal Ground area of device must be completely solder attached to RF circuit board vias for proper electrical and thermal circuit grounding. MSW2T Small Signal Parametric Performance: MSW2T Insertion Loss vs. Frequency -.5 MSW2T Insertion Loss (db) 2.E+7 5.2E+8 1.2E Frequency: 2 MHz to 1.2 GHz Wei Bo Associates HK, Ltd. sales@weiboassociates.com.hk 5
6 Isolation (db) Return Loss (db) RELEASED MSW2T-23X-192 Rev 1.2 MSW2T Return Loss vs. Frequency MSW2T Return Loss (db) 2.E+8 4.E+8 6.E+8 8.E+8 1.E+9 1.2E Fequency: 2 MHz to 1.2 GHz MSW2T Isolation vs. Frequency -1 MSW2T Isolation (db) 2.E+7 5.2E+8 1.2E Frequency: 2 Mhz to 1.2 GHz Wei Bo Associates HK, Ltd. sales@weiboassociates.com.hk 6
7 Return Loss (db) Insertion Loss (db) RELEASED MSW2T-23X-192 Rev 1.2 MSW2T Small Signal Parametric Performance: MSW2T Insertion Loss (db) 4.E+8 1.4E+9 2.4E+9 3.4E+9 4.4E Frequency: 4 MHHz to 4.5 GHz -5 MSW2T Return Loss (db) 4 1.4E+9 2.4E+9 3.4E+9 4.4E Frequency: 4 MHz to 4.5 GHz Wei Bo Associates HK, Ltd. sales@weiboassociates.com.hk 7
8 Insertion Loss (db) Isolation (db) RELEASED MSW2T-23X-192 Rev 1.2 MSW2T Isolation (db) E+9 2.4E+9 3.4E+9 4.4E Frequency: 4 MHz to 4.5 GHz MSW2T Small Signal Parametric Performance: -.1 MSW2T Insertion Loss (db) 2.E+9 3.E+9 4.E+9 5.E+9 6.E Frequency: 2. GHz to 6 GHz Wei Bo Associates HK, Ltd. sales@weiboassociates.com.hk 8
9 Isolation (db) Return Loss (db) RELEASED MSW2T-23X-192 Rev MSW2T Return Loss (db) 2.E+9 3.E+9 4.E+9 5.E+9 6.E Frequency: 2. GHz to 6 GHz -1 MSW2T Isolation (db) 2.E+9 3.E+9 4.E+9 5.E+9 6.E Frequency: 2. GHz to 6. GHz Assembly Instructions Wei Bo Associates HK, Ltd. sales@weiboassociates.com.hk 9
10 RELEASED MSW2T-23X-192 Rev 1.2 The MSW2T-23X-192 family of High Power Switches are available in either tube or Tape & Reel format. The MSW2T-23X-192 may be attached to the printed circuit card using solder reflow procedures using either RoHS or Sn63/ Pb37 type solders per the Table and Temperature Profile Graph shown below: Profile Parameter Sn-Pb Assembly Technique RoHS Assembly Technique Average ramp-up rate (T L to 3 o C/sec (max) 3 o C/sec (max) T P ) Preheat Temp Min (T smin ) Temp Max (T smax ) Time ( min to max) (t s ) 1 o C 15 o C 6 12 sec 1 o C 15 o C 6 18 sec T smax to T L Ramp up Rate 3 o C/sec (max) Peak Temp (T P ) 225 o C + o C / -5 o C 26 o C + o C / -5 o C Time within 5 o C of Actual Peak Temp (T P ) 1 to 3 sec 2 to 4 sec Time Maintained Above: Temp (T L ) Time (t L ) 183 o C 6 to 15 sec 217 o C 6 to 15 sec Ramp Down Rate 6 o C/sec (max) 6 o C/sec (max) Time 25 o C to T P 6 minutes (max) 8 minutes (max) Solder Re-Flow Time-Temperature Profile Wei Bo Associates HK, Ltd. sales@weiboassociates.com.hk 1
11 RELEASED MSW2T-23X-192 Rev 1.2 MSW2T-23X-192 SP2T Package Outline Drawing Note: Metalized area on backside is the RF, DC and Thermal ground. In user s end application this surface temperature must be managed to meet the power handling requirements. Thermal Design Considerations: The design of the MWT-23X-192 family of High Power Switches permits the maximum efficiency in thermal management of the PIN Diodes while maintaining extremely high reliability. Optimum switch performance and reliability of the switch can be achieved by the maintaining the base ground surface temperature of less than 85 o C. Recommended RF Circuit Solder Footprint for the MSW2T-23X-192 Wei Bo Associates HK, Ltd. sales@weiboassociates.com.hk 11
12 RELEASED MSW2T-23X-192 Rev 1.2 MSW2T Evaluation Board Schematic & Bill-of-Materials Small Signal Bias Components Component Nominal Manufacturer Part Number Description C2, C5, C15 27 pf Johanson Technology 251R14S27JV4T L1, L2, L3, L4, L5 47 nh Murata LQW2BAS47NJL R1 33Ω Panasonic ERJ-1TYJ33U R2, R3 56Ω Panasonic ERJ-1TYJ561U C3, C6, C7, C8, C9, C1, C11, C13, C14, C16, C17 27 pf TDK C168CG2E271J8AA 27 pf ±5%, 25V, Ceramic Cap CG NP 63 (IN) 47 nh, 5mA, 85 (IN) RES SMD 33Ω ±5%, 1W, 2512 (IN) RES SMD 56Ω ±5%, 1W, 2512 (IN) CAP CER 27pF, 25V CG 63 (IN) Wei Bo Associates HK, Ltd. 12
13 RELEASED MSW2T-23X-192 Rev 1.2 MSW2T Evaluation Board Test Condition 1: P-P1 Low Loss & P-P2 ISOLATION Header J1 Pin #8 Pin #7 Pin #6 Pin #5 Pin #4 Pin #3 Pin #2 Pin #1 V/GND +2V +5V V/GND +2V GND GND GND -1mA ma ~1mA -35mA ~35mA Test Condition 2: P-P1 ISOLATION & P-P2 LOW LOSS Header J1 Pin #8 Pin #7 Pin #6 Pin #5 Pin #4 Pin #3 Pin #2 Pin #1 +2V V/GND +5V +2V V/GND GND GND GND ~35mA -35mA ~1mA ma -1mA Wei Bo Associates HK, Ltd. 13
14 RELEASED MSW2T-23X-192 Rev 1.2 Part Number Ordering Details: MSW2T MSW2T TR MSW2T MSW2T TR MSW2T MSW2T TR Part Number Tube Tape & Reel (25 pcs) Tube Tape & Reel (25 pcs) Tube Tape & Reel (25 pcs) Packaging Wei Bo Associates HK, Ltd. 14
MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
RELEASED MSW2T-23-192/MSW2T-231-192/MSW2T-232-192 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 5 MHz to 6 GHz Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm Industry
More informationMSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
PRELIMINARY MSW2T-2030-192/MSW2T-2031-192/MSW2T-2032-192 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 50 MHz to 6 GHz Surface Mount SP2T Switch 5mm x 8mm x 2.5mm
More informationMSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
RELEASED MSW2T-2040-193/MSW2T-2041-193 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 50 MHz to 4 GHz Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm Industry Leading
More informationMSW2T SP2T Surface Mount High Power PIN Diode Switch
RELEASED MSW2T-2041-193 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 400 MHz to 4 GHz Surface Mount SP2T Switch: 8mm x 5mm x 2.5mm Average Power: +52 dbm High
More informationMSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
PRELIMINARY MSW2T-2060-195/MSW2T-2061-195/MSW2T-2062-195 SP2T Surface Mount High Power PIN Diode Switch Features: Surface Mount SP2T Switch 5mm x 8mm x 2.5mm Industry Leading Average Power Handling 100W
More informationMSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
RELEASED MSW2T-2060-195/MSW2T-2061-195/MSW2T-2062-195 SP2T Surface Mount High Power PIN Diode Switch Features: Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm Industry Leading Average Power Handling: 100W
More informationMSW3T SP3T Surface Mount High Power PIN Diode Switch
RELEASED MSW3T-3200-150 SP3T Surface Mount High Power PIN Diode Switch Features: Surface Mount SP3T Switch: 9mm x 6mm x 2.5mm Range: 50 MHz to 3.0 GHz Industry Leading Average Power Handling: +50 m (CW)
More informationMSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
PRELIMINARY MSW2T-2000-199/MSW2T-2001-199/MSW2T-2002-199 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 50 MHz to 6 GHz Surface Mount SP2T Switch 5mm x 8mm x 2.5mm
More informationMSW2T SP2T Surface Mount High Power Series PIN Diode Switch
PRELIMINARY MSW2T-2022-191 SP2T Surface Mount High Power Series PIN Diode Switch Features: Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm Industry Leading Average Power Handling: +52 dbm (CW) Frequency Range:
More informationRFSWLM S-Band Switch Limiter Module
PRELIMINARY RFSWLM-2420-131 S-Band Switch Limiter Module Features: Surface Mount S- Band Switch Limiter Module 5mm x 8mm x 2.5mm Frequency Range: 2 to 4 GHz Higher Average Power Handling than Plastic Packages
More informationThe MSW2T /-197 Switch Module carries a Class 1 ESD rating (HBM) and an MSL 1 moisture rating.
RELEASED MSW2T-2735-196/-197 S Band High Switch Module - SMT Features: Surface Mount S- Band Limiter Module: o -196: 9mm x 6mm x 2.5mm clockwise topology o -197: 9mm x 6mm x 2.5mm counter clockwise topology
More informationThe RFLM200802MA-299 Limiter Module carries a Class 1C ESD rating (HBM) and an MSL 1 moisture rating.
PRELIMINARY RFLM-200802MA-299 Two Stage Passive Limiter Module - SMT Features: Surface Mount Limiter Module: 5mm x 8mm x 2.5mm Passive High Power PIN Limiter Design Frequency Range: 20 MHz to 8 GHz High
More informationHigh Power C Band Limiter Module: Ultra Low Flat Leakage & Fast Recovery Time
PRELIMINARY RFLM-502602HC-491 High Power C Band Limiter Module: Ultra Low Flat Leakage & Fast Recovery Time Features: C Band SMT Limiter Module 6mm x 9mm x 2.5mm Frequency Range: 5.0 to 6.0 GHz High Average
More informationThe RFLM102202QX-290 Limiter Module carries a Class 0 ESD rating (HBM) and an MSL 1 moisture rating.
PRELIMINARY RFLM-102202QX-290 PIN Diode Limiter Module - SMT Features: Surface Mount L- Band Limiter Module 5mm x 8mm x 2.5mm Quasi Active High Power PIN Limiter Design Frequency Range: 1 to 2 GHz High
More informationQuasi Active High Power L Band PIN Diode Limiter Module - SMT. Surface Mount L- Band Limiter Module: High Peak Power Handling: Low Insertion Loss:
PRELIMINARY RFLM-102202XA-150 Quasi Active High Power L Band PIN Diode Limiter Module - SMT Features: Surface Mount L- Band Limiter Module: Frequency Range: High Average Power Handling: High Peak Power
More informationThe RFLM QX-290 Limiter Module carries a Class 0 ESD rating (HBM) and an MSL 1 moisture rating.
PRELIMINARY RFLM-202802QX-290 Two Stage Passive Limiter Module - SMT Features: Surface Mount Limiter Module: 5mm x 8mm x 2.5mm Passive High Power PIN Limiter Design Frequency Range: 2 GHz to 8 GHz High
More informationHigh Average Power Handling : High Peak Power Handling: Low Insertion Loss: Low Flat Leakage Power : Low Spike Energy Leakage:
PRELIMINARY RFLM-501202MC-299 Two Stage Passive Limiter Module - SMT Features: Surface Mount Limiter Module: Frequency Range: High Average Power Handling : High Peak Power Handling: Low Insertion Loss:
More informationQuasi Active High Power L Band PIN Diode Limiter Module - SMT. Surface Mount L- Band Limiter Module: High Peak Power Handling:
RELEASED RFLM-102202QX-290 Quasi Active High Power L Band PIN Diode Limiter Module - SMT Features: Surface Mount L- Band Limiter Module: Frequency Range: High Average Power Handling: High Peak Power Handling:
More informationHigh Average Power Handling: High Peak Power Handling: Low Insertion Loss:
RELEASED RFLM-102202QX-290 Quasi Active PIN Diode Limiter Module - SMT Features: Surface Mount L- Band Limiter Module Frequency Range: High Average Power Handling: High Peak Power Handling: Low Insertion
More informationHigh Average Power Handling: High Peak Power Handling: Low Insertion Loss: Low Flat Leakage Power:
PRELIMINARY RFLM-301511QC-290 Quasi Active High Power UHF Band Limiter Module Features: Frequency Range: High Average Power Handling: High Peak Power Handling: Low Insertion Loss: Return Loss: Low Flat
More informationHigh Peak Power Handling: Low Insertion Loss: Low Flat Leakage Power: Low Spike Energy Leakage:
RELEASED RFLM-202802QX-290 Two Stage Quasi-Active Limiter Module - SMT Features: Frequency Range: High Average Power Handling: High Peak Power Handling: Low Insertion Loss: Return Loss: Low Flat Leakage
More informationHigh Average Power Handling : High Peak Power Handling: Low Flat Leakage Power : Low Spike Energy Leakage:
PRELIMINARY RFLM-200802MA-299 Two Stage Passive Limiter Module - SMT Features: Frequency Range: High Average Power Handling : High Peak Power Handling: Insertion Loss: Return Loss: Low Flat Leakage Power
More informationHigh Peak Power Handling: Low Insertion Loss: Low Flat Leakage Power: Low Spike Energy Leakage:
RELEASED RFLM-202802QX-290 Two Stage Quasi-Active Limiter Module - SMT Features: Frequency Range: High Average Power Handling: High Peak Power Handling: Low Insertion Loss: Return Loss: Low Flat Leakage
More informationHigh Average Power Handling: High Peak Power Handling: Low Insertion Loss: Low Flat Leakage Power:
PRELIMINARY RFLM-301511QC-290 Quasi Active High Power UHF Band Limiter Module Features: Frequency Range: High Average Power Handling: High Peak Power Handling: Low Insertion Loss: Return Loss: Low Flat
More informationHigh Power ARNS/IFF Limiter Module: Ultra Low Flat Leakage & Fast Recovery Time
PRELIMINARY RFLM-961122MC-299 High Power ARNS/IFF Limiter Module: Ultra Low Flat Leakage & Fast Recovery Time Features: SMT Limiter Module: 8mm x 5mm x 2.5mm Frequency Range: 960 MHz to 1,215 MHz High
More informationThe RFLM QC-291 Limiter Module carries a Class 1C ESD rating (HBM) and an MSL 1 moisture rating.
PRELIMINARY RFLM-802123QC-291 X Band High Power Quasi-Active Limiter Module: Features: X Band SMT Limiter Module: 9mm x 6mm x 2.5mm Frequency Range: 8.7 to 11 GHz High Average Power Handling: +49 dbm Peak
More informationSurface Mount PIN Diode Limiter
Surface Mount LM501202-L-C-300 Series Datasheet Features Surface Mount Limiter in Compact Outline: 8mm L x 5mm W x 2.5 mm H Incorporates PIN Limiter Diodes, D.C. Blocks & D.C. Return Higher Peak Power
More informationSurface Mount PIN Diode Limiter
Surface Mount LM200802-M-A-300 Series Datasheet Features Surface Mount Limiter in Compact Outline: 8mm L x 5mm W x 2.5 mm H Incorporates Anti-Parallel Limiter Diodes Broadband Performance (20 MHz 8 GHz)
More informationLM M-A-300 Surface Mount Pin Diode Limiter, 20 MHz 8 GHz Datasheet
LM200802-M-A-300 Surface Mount Pin Diode Limiter, 20 MHz 8 GHz Datasheet Features Broadband Performance: 20 MHz 8 GHz Surface Mount Limiter in Compact Outline: 8 mm L x 5 mm W x 2.5 mm H Incorporates NIP
More informationSurface Mount Limiter, GHz
Surface Mount Limiter, 2.9 3.3 GHz LM2933-Q-B-301 Datasheet Features Surface Mount Limiter in Compact Package: 8 mm L x 5 mm W x 2.5 mm H Incorporates PIN Limiter Diodes, DC Blocks, Schottky Diode & DC
More informationPIN Diode Driver (Positive Voltage)
(Positive Voltage) MPD3T28125-701 Datasheet Features High output voltage and high output current PIN diode driver in surface mount package Usable with MSW3100 series T-R and symmetrical high power SP3T
More informationFEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS. T AMB = +25 C ( Unless otherwise specified )
Monolithic PIN SP5T Diode Switch FEATURES Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 db Insertion Loss 30 db Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction DESCRIPTION The
More informationMMP PIN Diode Data Sheet Rev A
Rev A Features Low Series Resistance for Low Insertion Loss and High Isolation: R S < 1.2 Ω Low Junction Capacitance for Low Insertion Loss and High Isolation: C J < 0.1 pf Low Thermal Resistance: < 45
More information50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over
More informationMADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3
Features 3 Terminal LPF Broadband Shunt Structure Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 db Shunt Insertion Loss < +15 dbm Flat Leakage Power Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package
More information50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
AWG115 Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG115, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a
More informationSP4T RF Switch HSWA4-63DR+
MMIC SP4T RF Switch Absorptive RF Switch with internal driver Single Supply Voltage, +2.3V to +5.5V The Big Deal High Isolation, 61 @ 0.9 GHz Low insertion loss, 0.9 at 0.9 GHz High IP3, +58 m Fast switching,
More informationMA4AGSW2. AlGaAs SP2T PIN Diode Switch. MA4AGSW2 Layout. Features. Description. Absolute Maximum Ratings TA = +25 C (Unless otherwise specified)
AlGaAs SP2T PIN Diode Switch Features Ultra Broad Bandwidth: 5 MHz to 5 GHz Functional bandwidth : 5 MHz to 7 GHz.7 db Insertion Loss, 33 db Isolation at 5 GHz Low Current consumption: -1 ma for Low Loss
More informationSBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block
Product Description Sirenza Microdevices SBB-389Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
More informationAS LF: GaAs IC High-Isolation Positive Control SPDT Nonreflective Switch LF to 4 GHz
DATA SHEET AS186-32LF: GaAs IC High-Isolation Positive Control SPDT Nonreflective Switch LF to 4 GHz Applications GSM, PCS, WCDMA, 2.4 GHz ISM and 3.5 GHz wireless local loop V1 J2 Features Positive voltage
More information4N25 Phototransistor Optocoupler General Purpose Type. Features
4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an
More informationSP4T RF Switch 50 Ω Absorptive RF switch 1 to 6000 MHz Internal driver, Single Supply Voltage 2.3V to 3.6V
Solid state SP4T RF Switch 50 Ω Absorptive RF switch 1 to 00 MHz Internal driver, Single Supply Voltage 2.3V to 3.6V The Big Deal High isolation, 57 db up to 2.7 GHz High linearity, IP3 +58 dbm at 1900
More informationMADS T. Schottky Limiter DC - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2.
Features 3 Terminal LPF Broadband Shunt Structure Low Slope Resistance, 7 Ω +3 dbm Peak and CW Power Handling.6 db Shunt Insertion Loss +2 dbm Flat Leakage Power Lead-Free 1. x 1.2 mm 6-lead TDFN Package
More information30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC
AWB589 Data Sheet 3 ~ 12 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB589, a medium power amplifier MMIC, has high linearity and high efficiency over a wide
More informationTGA2601-SM MHz High IP3 Dual phemt. Key Features and Performance. Measured Performance. Primary Applications. Product Description
800-3000 MHz High IP3 Dual phemt Key Features and Performance 800-3000 MHz Frequency Range
More information10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz HMC546LP2E
FEATURES High input P.dB: 4 dbm Tx Low insertion loss:.4 db High input IP3: 67 dbm Positive control: V low control; 3 V to 8 V high control Failsafe operation: Tx is on when no dc power is applied APPLICATIONS
More informationParameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Low loss broadband performance High isolation Non-reflective design Integrated 3:8 TTL decoder Pb-free RoHs compliant 4x4 SMT package Description The CMD236C4 is a broadband
More informationPARAMETER SYMBOL CONDITIONS VALUE UNIT
Page 1 of 6 FEATURES APPLICATIONS ±0.28 ppm Holdover Stability Mobile Phones ±4.6 ppm accuracy over all conditions Base Stations including 20 years aging Mobile Radios Miniature 5x7 mm SMD GPS Devices
More informationQPD0210TR7. 2x15 W, 48 V, GHz, Dual GaN RF Transistor. Product Overview. Applications. Functional Block Diagram. Ordering Information
Product Overview The is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 1.8 to 2.7 GHz. In each path is a single-stage amplifier transistor. can deliver PSAT of 16.6 W at +48
More informationHigh Power PIN Diodes
Applications Series/shunt elements in high power HF/VHF/ UHF transmit/receive (T/R) switches Features Very low thermal resistance for excellent power handling: 40 W C/W typical Low series resistance SMP1324-087LF:
More informationSPDT RF Switch RF Switch with internal driver Single Supply Voltage, +2.3V to +5.5V
High Power RF Switch with internal driver Single Supply Voltage, +2.3V to +5.5V The Big Deal High power handling, 32W @ 850 MHz - Pulsed High IIP3, +81 m Immune to latch-up CASE STYLE: JY2179 Product Overview
More informationProduct Description VG111-F
Gain Ctrl Product Features 1.7 2.7 GHz bandwidth 26.6 db Attenuation Range +39.5 dbm Output IP3 +22 dbm P1dB Constant IP3 & P1dB over attenuation range Single voltage supply Pb-free 6mm 2-pin QFN package
More informationSCG002 HIGH LINEARITY BROADBAND AMPLIFIER
SCG2 Features DC to 6 MHz 2 db Gain at 1 MHz 15 dbm Output P1dB at 1 MHz 29 dbm Output IP3 at 1 MHz 3.8 db Noise Figure at 2 MHz Applications Broadband Gain Blocks High Linearity Amplifiers Packages Available
More information21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter HMC815B
Data Sheet 1 GHz to 7 GHz, GaAs, MMIC, I/Q Upconverter HMC1B FEATURES Conversion gain: db typical Sideband rejection: dbc typical OP1dB compression: dbm typical OIP3: 7 dbm typical LO to RF isolation:
More informationMADP Solderable AlGaAs Flip Chip PIN. Features. Chip Dimensions. Description. Applications
Features Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation Polyimide Scratch
More informationMASW P. SURMOUNT PIN Diode Switch Element with Thermal Terminal. Features. Description. Ordering Information 2.
Features Specified Bandwidth: 45MHz 2.5GHz Useable 30MHz to 3.0GHz Low Loss 40dB High C.W. Incident Power, 50W at 500MHz High Input IP3, +66dBm @ 500MHz Unique Thermal Terminal for
More information12.92 GHz to GHz MMIC VCO with Half Frequency Output HMC1169
Data Sheet 12.92 GHz to 14.07 GHz MMIC VCO with Half Frequency Output FEATURES Dual output frequency range fout = 12.92 GHz to 14.07 GHz fout/2 = 6.46 GHz to 7.035 GHz Output power (POUT): 11.5 dbm SSB
More informationMA4P7470F-1072T. Non Magnetic MELF PIN Diode. Features. Description and Applications. Designed for Automated Assembly
Features Non-Magnetic Package Suitable for MRI Applications Rectangular MELF SMQ Ceramic Package Hermetically Sealed Low Rs for Low Insertion Loss Long τ L for Low Intermodulation Distortion Low Cj for
More informationRF OUT / N/C RF IN / V G
MAAM-111 MHz - 2 GHz Rev. V2 Features Functional Schematic 12 db Gain Ω Input / Output Match over Gain Range 3 db Gain Control with to -2 V Control +18 dbm Output Power + V, -. V DC, 7 ma Lead-Free 1.
More information12.17 GHz to GHz MMIC VCO with Half Frequency Output HMC1167
9 0 3 4 5 6 9 7 6.7 GHz to 3.33 GHz MMIC VCO with Half Frequency Output FEATURES Dual output frequency range fout =.7 GHz to 3.330 GHz fout/ = 6.085 GHz to 6.665 GHz Output power (POUT): 0.5 dbm Single-sideband
More informationCascadable Broadband InGaP MMIC Amplifier
Cascadable Broadband InGaP MMIC Amplifier DC-14 GHz Description AKA-1500GN Akoustis AKA-1500GN cascadable broadband InGaP HBT MMIC amplifier is a low-cost high-performance solution for your general-purpose
More information4 PIN DIP LOW INPUT PHOTOTRANSISTOR PHOTOCOUPLER EL8171-G Series
Schematic Features: Current transfer ratio (CTR: 50~300% at I F =0.5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up
More information11.41 GHz to GHz MMIC VCO with Half Frequency Output HMC1166
9 6 3 30 29 VTUNE 28 27 26.4 GHz to 2.62 GHz MMIC VCO with Half Frequency Output FEATURES Dual output frequency range fout =.4 GHz to 2.62 GHz fout/2 = 5.705 GHz to 6.3 GHz Output power (POUT): dbm Single-sideband
More informationTGA2602-SM MHz High IP3 Dual phemt. Key Features and Performance. Measured Performance. Primary Applications. Product Description
800-3000 MHz High IP3 Dual phemt Key Features and Performance 800-3000 MHz Frequency Range
More informationRFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz
Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz RFMD s wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single
More informationELECTRICAL SPECIFICATIONS PARAMETER SYMBOL CONDITION VALUE UNIT
MEMS Oscillator Page 1 of 5 Ultra Low power: < 1 A Fixed 32.768 khz No Supply Voltage external bypass capacitors required XTAL replacement in 2.0 mm x 1.2 mm SMD SMD package 2.0 x 1.2 mm ELECTRICAL SPECIFICATIONS
More informationCascadable Broadband InGaP MMIC Amplifier
Cascadable Broadband InGaP MMIC Amplifier DC-14 GHz Description AKA-1310MT Akoustis AKA-1310MT cascadable broadband InGaP HBT MMIC amplifier is a low-cost high-performance solution for your general-purpose
More information5.5 GHz to 8.6 GHz, GaAs, MMIC, I/Q Upconverter HMC6505A
Data Sheet FEATURES Conversion gain: db typical Sideband rejection: dbc typical Output P1dB compression at maximum gain: dbm typical Output IP3 at maximum gain: dbm typical LO to RF isolation: db typical
More informationMASW M/A-COM Products V2. with Integrated Bias Network. Features. Description. Yellow areas denote wire bond pads.
Features Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Rugged, Glass Encapsulated Construction Fully Monolithic Description The
More informationSKY LF: 0.9 to 4.0 GHz, 125 W High-Power Silicon PIN Diode SPDT Switch
DATA SHEET SKY12215-478LF: 0.9 to 4.0 GHz, 125 W High-Power Silicon PIN Diode SPDT Switch Applications Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations Transmit/receive
More informationHMC241AQS16 / 241AQS16E
v00.1213 Typical Applications Features The HMC241AQS16 & HMC241AQS16E are ideal for: Base Stations & Portable Wireless CATV / DBS Wireless Local Loop Test Equipment Functional Diagram RoHS Compliant Product
More informationBSW MHz-6000MHz High Linearity Reflective SPDT RF switch. Product Description. Package Type. Device Features - Common.
Product Description The BSW6321 is a reflective SPDT RF switch that can be used in high power and good performance WiMAX 802.16, WLAN 802.11 a/b/g/n/ac/ax and DOCSIS 3.0/3.1 applications. This device is
More information4 PIN SOP HIGH VOLTAGE PHOTODARLINGTON PHOTOCOUPLER EL452-G Series
EL452-G Series Features: Halogens free High collect-emitter voltage (V CEO = 350V) Current transfer ratio (CTR: Min. 1000% at I F =1mA,V CE =2V) High isolation voltage between input and output (Viso=3750
More informationFlat Gain Amplifier GHz YSF-232+ Mini-Circuits System In Package
Mini-Circuits System In Package The Big Deal: Ultra Flat Gain Response: ± 0.2 over 1700-2300 MHz 50Ω Input and Output: no External Components Required CASE STYLE: DL1636 Product Overview: is an advanced
More informationMAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.1211 45 Analog Phase Shifter,
More informationSKY LF: GHz 40 W High Power Silicon PIN Diode SPDT Switch
DATA SHEET SKY12209-478LF: 0.9-4.0 GHz 40 W High Power Silicon PIN Diode SPDT Switch Applications Transmit/receive switching and RF path switching in TD-SCDMA, WiMAX, and LTE base stations Transmit/receive
More informationData Sheet. HCPL-181 Phototransistor Optocoupler SMD Mini-Flat Type. Features
HCPL-8 Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The HCPL-8
More informationHigh Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12.0 GHz ADRF5040
RF4 RF3 7 8 9 1 11 12 21 2 19 RF2 High Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12. GHz ADRF54 FEATURES FUNCTIONAL BLOCK DIAGRAM Nonreflective 5 Ω design Positive control range: V to 3.3
More informationQPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
0.15 2.8 GHz High Power GaN SP3T Switch Product Overview Qorvo s is a Single-Pole, Triple Throw (SP3T) switch fabricated on Qorvo s QGaN25 5um GaN on SiC production process. Operating from 0.15 to 2.8
More informationMADR PIN Diode Driver for Series / Series High Power Switch Rev. 5. Pin Configuration. Features. Description
MADR-8888- Rev. Features High Drive Current Capability (± ) 7 Back Bias in Off State Switching Speed Approximately. Low Current Coumption Land Grid Array Package for SMT Applicatio Tape and Reel Packaging
More information8 PIN DIP HIGH SPEED 10MBit/s LOGIC GATE PHOTOCOUPLER EL263X series
Schematic Features High speed 10Mbit/s 10kV/μs min. common mode transient immunity (EL2631) Guaranteed performance from -40 to 85 Logic gate output High isolation voltage between input and output (Viso=5000
More informationPreliminary Datasheet
Product Description The is a reflective SPDT RF switch that can be used in high power and good performance WLAN 802.11 a/b/g/n/ac/ax, DOCSIS 3.0/3.1 and Wireless Communication applications. This device
More information10W avg Broadband SP4T
10W avg Broadband SPT FEATURES Low insertion loss o 0.5dB @ 800MHz High isolation o 0dB @ 800MHz High linear power handling No external DC blocking capacitors on RF lines 0dBm CW hot switching capable
More informationMAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C
MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated
More informationQPD0020S2. 35 W, 48 V, DC 6 GHz, GaN RF Power Transistor. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a 35 W unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and
More informationData Sheet. HCPL-181 Phototransistor Optocoupler SMD Mini-Flat Type. Description
HCPL-8 Phototransistor Optocoupler SMD Mini-Flat Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The HCPL-8
More informationHMC546MS8G / 546MS8GE
v6.89 HMC546MS8G / 546MS8GE GaAs MMIC 2W FAILSAFE SWITCH.2-2.2 GHz Typical Applications The HMC546MS8G(E) is ideal for: LNA Protection, WiMAX, WiBro Cellular/PCS/3G Infrastructure Private Mobile Radio
More informationMonolithic Amplifier PHA-202+ Ultra High Dynamic Range to 2.7 GHz. The Big Deal
Ultra High Dynamic Range Monolithic Amplifier 50Ω 0.03 to 2.7 GHz The Big Deal Ultra High IP3, +46.1 dbm Broadband High Dynamic Range without external Matching Components Medium power, 1W Excellent return
More information10W Avg Broadband SPDT
10W Avg Broadband SPDT FEATURES Low insertion loss o 0.35dB @ 800MHz High isolation o 45dB @ 800MHz High Peak Power Handling No external DC blocking capacitors on RF lines 40dBm CW hot switching capable
More informationMonolithic Amplifier MNA-6W+ High Directivity. 0.5 to 5.5 GHz
High Directivity Monolithic Amplifier 50Ω 0.5 to 5.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview
More informationFeatures. Parameter Frequency Min. Typ. Max. Units. Return Loss Off State DC - 20 GHz 13 db
Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Hybrids Test Instrumentation SATCOM & Sensors Functional Diagram Features Broadband Performance: DC
More informationPreliminary Datasheet
Product Description The is a reflective SPDT RF switch that can be used in high power and good performance WLAN 802.11 a/b/g/n/ac/ax, DOCSIS 3.0/3.1 and Wireless Communication applications. This device
More informationSurface Mount RF PIN Diodes. Technical Data. HSMP-383x Series. Features. Package Lead Code Identification (Top View)
Surface Mount RF PIN Diodes Technical Data HSMP-383x Series Features Diodes Optimized for: Low Capacitance Switching Low Current Attenuator Surface Mount SOT-23 Package Single and Dual Versions Tape and
More informationRFDA4005TR13. 6-Bit, Digital Controlled Variable Gain Amplifier 50MHz to 4000MHz
6-Bit, Digital Controlled Variable Gain Amplifier 50MHz to 4000MHz RFMD s RFDA4005 is a digitally controlled variable gain amplifier featuring high linearity over the entire gain control range with noise
More informationMonolithic Amplifier MNA-2A+ High Directivity. 0.5 to 2.5 GHz
High Directivity Monolithic Amplifier 50Ω 0.5 to 2.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview
More informationTGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
More informationSBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier
Product Description Sirenza Microdevices SBB-89Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
More informationHIGH POWER SPDT SWITCH GaAs MMIC
HIGH POWER SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1681MD7 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1681MD7 features very low insertion loss, high isolation
More informationTGA2806-SM. CATV Linear Amplifier. Key Features. Measured Performance Small Signal Gain (75 Ω) includes balun losses
CATV Linear Amplifier Key Features Frequency Range: 40MHz - 1GHz Gain: 20 db 1.7 db 75 Ω Noise Figure Ultra-Low Distortion: -67dBc ACPR typical Low DC Power Consumption Single Supply Bias:+8V, 380mA 28L
More information