AN2480 Application note
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- Reginald McDaniel
- 5 years ago
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1 N2480 pplication note ST333W emo boa application note Intouction The pupose in this ocument is: to escibe how to connect the N2480 emo boa, how to evaluate the emo boa pefomance with electical cuve ata, how to avoi citical boa an layout issues. pplication note can be configue fo eithe: 2.0 channels (2 x 20 W), with heaphone output, 2.1 channels (2 x 10 W + 20 W) without heaphone function. The N2480 emo boa is combine with DDx powe amplifie an an opeation amplifie fo heaphones. It is a total solution fo igital auio powe amplifie TV an potable applications. Note: ll the test items an gaph ata in this ocument ae measue by uio Pecision equipment. Decembe 2006 Rev 1 1/61
2 Contents N2480 Contents 1 Test conition an connection of emo boa Test conition Powe supply an inteface connections Output configuation Equipment equiement Connection metho Schematic PC Layout Top view of PC layout ottom view of PC layout Test connection Electical chaacteistics OM list Test cuve epot Tenay moe TL configuation inay moe Single en configuation Heaphone pefomance Design guieline fo PC schematic an layout Schematic Main ive fo components selection Decoupling capacitos Output filte Layout Revision histoy /61
3 N2480 Test conition an connection of emo boa 1 Test conition an connection of emo boa 1.1 Test conition Powe supply an inteface connections 1. Connect positive voltage of 12 V DC powe supply to +Vcc pin an negative to GND. 2. Connect positive voltage of 3.3 V DC powe supply to +3.3 V pin an negative to GND. 3. Connect GUI LPT inteface boa to the J1 connecto of N2480 emo boa. 4. Connect the S/PDIF signal cable to the RC jack on the inteface boa, the othe sie connecting to the signal souce such as uio pecision o DVD playe. 5. The voltage ange of the DC powe supply fo Vcc is fom 5 V to 18 V Output configuation ST333W emo boa can be configue in the tenay state fo 2.0 channels. 1.2 Equipment equiement uio Pecision (System 2700) by P Co., US DC powe supply (5 V to 18 V) Digital oscilloscope (TDS3034) by Tektonix PC (with N2480 GUI contol softwae installe) 1.3 Connection metho Top view of emo boa. Figue 1. lock iagam 3.3 V fom LPT Vcc, DC 5-18 V Heaphone jack ψ :3.5mm Connect e with GUI contol boa (I 2 C an I 2 S) Speake jack, output can be set fo eithe 2.0 o 2.1 configuation 3/61
4 Test conition an connection of emo boa N2480 Figue speake jack configuation R-CH L-CH Figue speake jack configuation Sub-woofe L-CH R-CH 4/61
5 N2480 Test conition an connection of emo boa Schematic Figue 4. DDx schematic iagam Figue 5. Heaphone schematic iagam 5/61
6 Test conition an connection of emo boa N PC Layout Top view of PC layout Figue 6. Top layout ottom view of PC layout Figue 7. ottom layout 6/61
7 N2480 Test conition an connection of emo boa Test connection Figue 8. lock iagam of test equipment uio pecision equipment Output to P S/PDIF signal Monito Digital oscilloscope TDS3034 Tektonix DDX ST333W emo boa I 2 S signal (DC3V3) GUI LPT boa o USSPDIF I/O boa (DC7V) 7V fo LPT D Fom 5 V to 18 V DC powe supply PC with GUI to contol the chipset 7/61
8 Electical chaacteistics N Electical chaacteistics Table 1. Electical chaacteistics (1) Paamete Configuation Test conition Unit PSRR ( ) TL configuation Please efe to measuements section 65 Min SNR TL configuation 1 W output, Fs input, 1 K 100 Max moulation inex DDX moulation moe 98.5% Vcc cuent (18 V) TL configuation Opeating Quiescent Stanby/sleep 40 m 30 m 0m 1. Refe to the ST333W emo boa cicuit. Vs= +18 V, Tamb = 25.5 o C, f = 1 K, Ref = 1 W unless othewise specifie. Note: THD woks bette with high impeance loaing (base on a fixe value of R son ). 2.1 OM list Table 2. Item no. OM Type Package Desciption Qty Refeence coe Manufactue 1 CCP CCP V NPO 100pF +/- 10 % 2 C22, C24 Muata 2 CCP CCP V NPO 150pF +/- 10 % 2 C14, C18 Muata 3 CCP CCP V NPO 220pF +/- 10 % 4 C16, C19, C20, C21 Muata 4 CCP CCP V NPO 330pF +/- 10 % 3 C418, C418, C425 Muata 5 CCP CCP V NPO 470pF +/- 10 % 2 C10, C17 Muata 6 CCP CCP V NPO 680pF +/- 5 % 1 C9 Muata 7 CCP CCP V 1 nf +/- 10 % 2 C3 Muata 8 CCP CCP V 4.7 nf +/- 10 % 1 C7 Muata 9 CCP CCP V 100 nf +/- 10 % 24 C2, C4, C5, C6, C11, C13, C15, C26, C429, C420, C421, C421, C423, C422, C422, C423, C424, C424, C427, C427, C428, C428, C429, C429 Muata 10 CCP CP V, 1U +/- 10 % 2 C426, c426 Rubycon 11 ED L M 2 D1, D2 Muata 12 RES R /- 10 % 1/8 W 4 R423, R422, R425, R425 Muata 13 RES R /- 10 % 1/8 W 3 R423, R422, R422 Muata 8/61
9 N2480 Electical chaacteistics Table 2. Item no. 14 RES R ohm 1/16 W 4 R29, R30, R401, R402 Muata 15 RES R /- 10 % 1/16 W 2 R2, R3 Muata 16 RES R K +/- 10 % 1/16 W 1 R6 Muata 17 RES R ohm +/- 10 % 1/10 W 2 D3, D4 Muata 18 RES R K +/- 10 % 1/10 W 4 R426, R426, R427, R427 Muata 19 RES R K +/- 10 % 1/16 W RES R K +/- 10 % 1/16 W 13 R7, R8, R9, R10, R13, R14, R15, R16, R17, R18, R21, R22 Muata R1, R4, R5, R11, R12, R19, R20, R23, R24, R25, R26, R27, R28 21 ECP ECP25X5 100 µ/25 V 4 C1, C12, C23, C25 22 ECP ECP25X5 N.M. Muata Rubycon/ Panasonic 23 ECP ECP25X8 330 µ/25 V 4 C430, C430, C431, C431 Rubycon/ Panasonic 24 ECP ECP25X µf/25 V 1 C4 25 IC ST333W ST333W(SS036) 1 IC1 ST 26 IC LM833 LM833(SO8) 1 IC2 ST Rubycon/ Panasonic 27 Coil L22n_ nh choke coil 4 L421, L421, L422, L422 Kwangsung 28 Jack SPKR_JCK 6P speake jack 1 J7 ny souce 29 MCP 30 Teminal 470N-M (63 V) CNN_ Teminal 470NF-M963 V) capacito 3 C415SL, C415SR, C416S ny souce 2P pitch: 5 mm connecto teminal 2 CN2, CN5 ny souce 31 SW TCT SW 4P tact switch 1 SW1 ny souce 32 Jack 3.5 mm phone jack 33 CNN 16P-CNN 34 JW OM Type Package Desciption Qty Refeence coe Manufactue 2P-2.5 mm JW 3P 2 CH 3.5 MM phone jack 16P (8 x 2 ow) 2.5 mm male CNN 1 J9 ny souce 1 J1 ny souce Not mounting 4 J2, J3, J4, J5 ny souce 9/61
10 Test cuve epot N Test cuve epot 3.1 Tenay moe Figue 9. Tenay moe efficiency (2.0 TL configuation) Conition: R LOD =8 ohm; VCC=18 V 10/61
11 N2480 Test cuve epot 3.2 TL configuation Figue 10. Output powe vesus supply voltage 1%THD output powe 30 output powe W ohm 6 ohm 8 ohm 16 ohm supply voltage V Figue 11. Channel sepaation 5 V 1 W 4 ohm 0 11/61
12 Test cuve epot N2480 Figue 12. Channel sepaation 5 V 1 W 8 ohm 0 Figue 13. FFT 0 Fs 1 K 5 V 4 ohm Figue 14. FFT Fs 1 K 5 V 4 ohm /61
13 N2480 Test cuve epot Figue 15. FFT 0 Fs 1 K 5 V 6 ohm Figue 16. FFT Fs 1 K 5 V 6 ohm Figue 17. FFT 0 Fs 1 K 5 V 8 ohm /61
14 Test cuve epot N2480 Figue 18. FFT Fs 1 K 5 V 8 ohm Figue 19. THD vesus Feq. 5 V Vcc 1 W output ohm 4ohm % ohm Figue 20. PSSR 5 V 1 W T 8ohm 6ohm 4ohm /61
15 N2480 Test cuve epot Figue 21. Channel sepaation 12 V 1 W 4 ohm 0 Figue 22. Channel sepaation 12 V 1 W 8 ohm) 0 Figue 23. FFT 0 Fs 1 K 12 V 4 ohm /61
16 Test cuve epot N2480 Figue 24. FFT Fs 1 K 12 V 4 ohm Figue 25. FFT 0 Fs 1 K 12 V 6 ohm Figue 26. FFT Fs 1 K 12 V 6 ohm /61
17 N2480 Test cuve epot Figue 27. FFT 0 Fs 1 K 12 V 8 ohm Figue 28. FFT Fs 1 K 12 V 8 ohm Figue 29. THD vesus Feq 12 V Vcc 1 W output % 0.1 6ohm 4ohm ohm 17/61
18 Test cuve epot N2480 Figue 30. PSSR 12 V 1 W T 8ohm 6ohm 4ohm Figue 31. Channel sepaation 18 V 1 W 4 ohm 0 Figue 32. Channel sepaation 18 V 1 W 6 ohm 0 18/61
19 N2480 Test cuve epot Figue 33. FFT 0 Fs 1 K 18 V 4 ohm Figue 34. FFT Fs 1 K 18 V 4 ohm Figue 35. FFT 0 Fs 1 K 18 V 6 ohm /61
20 Test cuve epot N2480 Figue 36. FFT Fs 1 K 18 V 6 ohm Figue 37. FFT 0 Fs 1 K 18 V 8 ohm Figue 38. FFT Fs 1 K 18 V 8 ohm /61
21 N2480 Test cuve epot Figue 39. THD vesus Feq. 18 V Vcc 1 W ohm 4ohm 0.1 % ohm 0.01 Figue 40. PSSR 18 V 1 W T 8ohm 6ohm 4ohm Figue 41. Fequency esponse 18 V Vcc 1 W ohm 8ohm 6ohm -3 21/61
22 Test cuve epot N2480 Figue 42. THD vesus Feq 18 V Vcc 16 W output ohm % ohm 6ohm 0.01 Figue 43. THD vesus PWR 4 ohm loa % 0.2 5v 8v 10v v 14v 12v m 200m 500m W Figue 44. THD vesus PWR 6 ohm loa % v 10v 8v 12v v 16v 18v m 200m 500m W 22/61
23 N2480 Test cuve epot Figue 45. THD vesus PWR 8 ohm loa v 12v 0.5 % v 8v 16v 18v v m 200m 500m W Figue 46. THD vesus PWR 16 ohm loa v 18v % v 10v 16v v 14v m 200m 500m W 3.3 inay moe Figue 47. inay moe efficiency (2.1 single en configuation) Conition: R LOD =8 ohm; VCC=18 V 23/61
24 Test cuve epot N Single en configuation Figue 48. Output powe vesus supply voltage 1%THD output powe vs supply voltage output powe W ohm 3 ohm 4 ohm 8 ohm supply voltage V Figue 49. Channel sepaation 5 V 1 W 2 ohm single en 0 24/61
25 N2480 Test cuve epot Figue 50. Channel sepaation 5 V 1 W 3 ohm single en 0 Figue 51. Channel sepaation 5 V 1 W 4 ohm single en 0 Figue 52. FFT 0 Fs 1 K 5 V 2 ohm single en 0 25/61
26 Test cuve epot N2480 Figue 53. FFT Fs 1 K 5 V 2 ohm single en 0 Figue 54. FFT 0 Fs 1 K 12 V 3 ohm single en 0 Figue 55. FFT Fs 1 K 5 V 3 ohm single en 0 26/61
27 N2480 Test cuve epot Figue 56. FFT 0 Fs 1 K 5 V 4 ohm single en 0 Figue 57. FFT Fs 1 K 5 V 4 ohm 0 Figue 58. PSSR 5 V 1 W 0 3ohm 4ohm 2ohm /61
28 Test cuve epot N2480 Figue 59. Channel sepaation 12 V 1 W 2 ohm single en 0 Figue 60. Channel sepaation 12 V 1 W 3 ohm single en 0 Figue 61. Channel sepaation 12 V 1 W 4 ohm single en 0 28/61
29 N2480 Test cuve epot Figue 62. FFT 0 Fs 1 K 12 V 2 ohm single en 0 Figue 63. FFT Fs 1 K 12 V 2 ohm single en 0 Figue 64. FFT 0 Fs 1 K 12 V 3 ohm single en 0 29/61
30 Test cuve epot N2480 Figue 65. FFT Fs 1 K 12 V 3 ohm single en 0 Figue 66. FFT 0 Fs 1 K 12 V 4 ohm single en 0 Figue 67. FFT Fs 1 K 12 V 4 ohm single en 0 30/61
31 N2480 Test cuve epot Figue 68. PSSR 12 V 1 W 4ohm 3ohm 2ohm Figue 69. THD vesus Feq 12 V Vcc 1 W output single en ohm % ohm 4ohm Figue 70. Channel sepaation 18 V 1 W 2 ohm single en 0 31/61
32 Test cuve epot N2480 Figue 71. Channel sepaation 18 V 1 W 3 ohm single en 0 Figue 72. Channel sepaation 18 V 1 W 4 ohm single en 0 Figue 73. FFT 0 Fs 1 K 18 V 2 ohm single en 0 32/61
33 N2480 Test cuve epot Figue 74. FFT Fs 1 K 18 V 2 ohm single en 0 Figue 75. FFT 0 Fs 1 K 18 V 3 ohm single en 0 Figue 76. FFT Fs 1 K 18 V 3 ohm single en 0 33/61
34 Test cuve epot N2480 Figue 77. FFT 0 Fs 1 K 18 V 4 ohm single en 0 Figue 78. FFT Fs 1 K 18 V 4 ohm single en 0 Figue 79. PSSR 18 V 1 W 4ohm 3ohm 2ohm /61
35 N2480 Test cuve epot Figue 80. THD vesus Feq 18 V Vcc 1 W output single en ohm % ohm 4ohm Figue 81. THD vesus PWR 2 ohm loa single en % 0.2 5v 18v 16v v 10v 12v 14v m 200m 500m W Figue 82. THD vesus PWR 3 ohm loa single en % 5v 18v 16v v 12v 10v 8v m 200m 500m W 35/61
36 Test cuve epot N2480 Figue 83. THD vesus PWR 4 ohm loa single en % 5v 18v 16v 14v v 10v 12v m 200m 500m W Figue 84. THD vesus PWR 8 ohm loa single en % v 18v 16v 14v 12v v m 200m 500m W 3.5 Heaphone pefomance Figue 85. Channel sepaation 5 V 1 mw 16 ohm /61
37 N2480 Test cuve epot Figue 86. Channel sepaation 5 V 1 nw 32 ohm Figue 87. Channel sepaation 12 V 1 mw 16 ohm Figue 88. Channel sepaation 12 V 1 mw 32 ohm /61
38 Test cuve epot N2480 Figue 89. Channel sepaation 18 V 1 nw 16 ohm Figue 90. Channel sepaation 12 V 1 mw 32 ohm Figue 91. Noise floo 5 V 16 ohm V /61
39 N2480 Test cuve epot Figue 92. FFT 0 Fs 1 K 5 V 16 ohm 0 Figue 93. FFT Fs 1 K 5 V 16 ohm 0 Figue 94. Noise floo 5 V 32 ohm V /61
40 Test cuve epot N2480 Figue 95. FFT 0 Fs 1 K 5 V 32 ohm 0 Figue 96. FFT Fs 1 K 5 V 32 ohm 0 40/61
41 N2480 Test cuve epot Figue 97. Noise floo 12 V 16 ohm V Figue 98. FFT 0 Fs 1 K 12 V 16 ohm 0 Figue 99. FFT Fs 1 K 12 V 16 ohm 0 41/61
42 Test cuve epot N2480 Figue 100. Noise floo 12 V 32 ohm V Figue 101. FFT 0 Fs 1 K 12 V 32 ohm 0 Figue 102. FFT Fs 1 K 12 V 32 ohm 0 42/61
43 N2480 Test cuve epot Figue 103. Noise floo 18 V 16 ohm V Figue 104. FFT 0 Fs 1 K 18 V 16 ohm 0 Figue 105. FFT Fs 1 K 18 V 16 ohm 0 43/61
44 Test cuve epot N2480 Figue 106. Noise floo 18 V 32 ohm V Figue 107. FFT 0 Fs 1 K 18 V 32 ohm 0 Figue 108. FFT Fs 1 K 18 V 32 ohm 0 44/61
45 N2480 Test cuve epot Figue 109. THD vesus Feq 5 V 1 mw 16 ohm % Figue 110. THD vesus Feq 5 V 1 mw 32 ohm % Figue 111. THD vesus Feq 12 V 1 mw 16 ohm % /61
46 Test cuve epot N2480 Figue 112. THD vesus Feq 12 V 1 mw 32 ohm % Figue 113. THD vesus Feq 18 V 1 mw 16 ohm % /61
47 N2480 Test cuve epot Figue 114. THD vesus Feq18 V 1 mw 32 ohm % Figue 115. THD vesus PWR 16 ohm % u 200u 500u 1m 2m 5m W 10m Figue 116. THD vesus PWR 32 ohm % u 200u 500u 1m 2m 5m 10m W 20m 47/61
48 Design guieline fo PC schematic an layout N Design guieline fo PC schematic an layout 4.1 Schematic Main ive fo components selection bsolute maximum ate: 20 V. ypass capacito 100 nf in paallel to 1 µf fo each powe Vcc banch. Pefeable ielectic is X7R. V an goun fo PLL filte sepaate of the powe supply. Coil satuation cuent compatible with the peak cuent of the application. 4.2 Decoupling capacitos Thee ae two iffeent ways to use the ecoupling capacitos: shae among the channels: the best pactise layout oute must be use fo the boa, one ecoupling system pe channel: it is manatoy that the ecoupling capacito must be as close as possible to the IC pins Output filte Figue 117. Output filte INx L11 22u C90 330p C89 100n R34 C p R36 20 C95 100n C n 6.2 R C98 470n C p J7 1 2 CON2 C n C p INx L13 22u Snubbe Main filte Dumping netwok The key function of a snubbe netwok is to absob enegy fom the eactance in the powe cicuit. The pupose of the snubbe RC netwok is in oe to avoi the high pulse enegy (such as spikes) in the powe cicuit which can be angeous to the system. When using the snubbe netwok, the enegy is be tansfee to an fom the snubbe netwok, ensuing the system can wok safely. 48/61
49 N2480 Design guieline fo PC schematic an layout The pupose of the main filte is to emove fequency highe than auible ange of 20 K. The main filte uses the uttewoth fomula to efine the cut off fequency, which must be highe than 20 K, othewise the fequency esponse is affecte. The pupose of the umping netwok is to avoi high fequency oscillation on the output cicuit. fte using the umping netwok the THD can be impove, an can also avoi the inuctive coppe on the PC oute when the system is woking in high fequency with PWM o PCM. Snubbe filte Figue 118. Snubbe filte INx C p R44 22 INx The snubbe cicuit must be optimize fo the application. Stating values ae 330 pf in seies to 22 ohm. The powe can be efine by the following fomula which consies the powe supply, fequency an capacito value: P=C*f*(2*V)^2 This powe is issipate in seies esistance. Figue 119. Dissipate powe INx C p R45 22 R46 22 INx C p Dumping netwok The C-R-C is a umping netwok. It is mainly intene fo high inuctive loas. 49/61
50 Design guieline fo PC schematic an layout N2480 Figue 120. Dumping filte C ump-s C ump-p R ump C ump-p Rump C ump-s Main filte The main filte is an L an C base uttewoth filte. The cut-off fequency must be chosen between the uppe limit of the auio ban (20 K) an the caie fequency (384 K). Figue 121. Main filte C 1 loa = Π f cutoff R loa INx Lloa L loa R loa = Π 2 f cutoff F 1 cutoff = Π 2 C loa L loa INx C loa Lloa Rloa Recommene values Rloa 8 ohm 4 ohm Lloa 22 µh 10 µh Cloa 470 nf 1 µh C ump-s 100 nf 220 nf C ump-p 220 nf 220 nf R ump /61
51 N2480 Design guieline fo PC schematic an layout Recommene powe up an powe own sequence Figue 122. Main filte 4.3 Layout 1. Sole snubbe netwok as close as possible to the IC elate pin. Figue 123. Snubbe netwok Snubbe netwok 2. Use electolytic capacito fist to sepaate the Vcc banches. Figue 124. Sepaate the Vcc banches Sepaate fom the E-cap 51/61
52 Design guieline fo PC schematic an layout N Minimize the path between Vcc pins an goun pin in oe to avoi inuctive paths. Figue 125. Minimize paths between Vcc an GND Vcc an goun 4. To issipate the themal with a goun plane. Figue 126. Dissipate themal ig goun plane 5. Sole PLL filte as close as possible to the FILT pin. Figue 127. PLL filte PLL filte 52/61
53 N2480 Design guieline fo PC schematic an layout 6. Fo iffeential application ceate symmetical paths fo the output stage. Figue 128. Symmetical paths fo output stage Symmetical output paths 7. Sepaate the coil an the neighboing coil ae vetical to avoi cosstalk. Figue 129. voiing cosstalk Sepaate the coils to avoi cosstalk 53/61
54 Design guieline fo PC schematic an layout N2480 Figue 130. Filte capacito Use a polyeste o metal capacito fo the filte 8. Consie goun layout. To avoi intefeence between goun powe an small signal goun, it is necessay to ivie the gouning as shown in Figue 131. Figue 131. Goun layout Powe goun plane Heaphone goun plane Channel goun plane 54/61
55 N2480 Design guieline fo PC schematic an layout 9. VCC outing. The best oute fo the Vcc supply is one which avois intefeence between iffeent signals (fo example, pat is ile whilst pat is woking at full loa). Figue 132. Vcc outing est metho to isolate the two channels Goo Vcc outing amplifies ae isolate fom each othe a Vcc outing two amplifies ae aisy chaine 10. Vcc filte fo high fequency. The PWM system woks with a fast switch (fequency of 340 K appoximately) which means the coppe wie woks as a coil. In oe to avoi this, a ceamic capacito shoul be use to balance esistance. It is a manatoy equiement that ceamic capacitos ae place as close as possible to the elate pins. The istance between the capacito an thei espective pins shoul be less then 5 mm in oe to minimize inuctive coil effect geneate by the coppe wie. 55/61
56 Design guieline fo PC schematic an layout N2480 Figue 133. Vcc filte Vcc capacito filte as close to the elate pins as possible. The ceamic capacitos on the bottom of the PC close to the IC ue to SMD mounting limitations. 11. Decoupling capacitos. Sole ecoupling capacitos as close as possible to thei espective IC pin. This euces the inuctive coil effect. Figue 134. Decoupling capacitos Goo amplifie bypassing capacitos ae popely place a amplifie bypassing, capacitos ae out of oe an goun connection is iniect 12. Snubbe filtes fo high fequency spike potection on the PWM. Figue 135. Snubbe filte placement Place snubbe cicuit as close as possible to the appopiate IC pins, an the - an + fo each channel. 56/61
57 N2480 Design guieline fo PC schematic an layout Figue 136. Examples of snubbe filte placement Goo common moe snubbe placement Goo iffeential snubbe placement Caution: spike can occu if thee > 3 mm istance between the snubbe netwok an the pins. This can cause amage to the IC. Theefoe the istance must be kept below 3 mm. 57/61
58 Design guieline fo PC schematic an layout N Output outing Figue 137. Output outing Goo output outing taces gow wie as space allows Note: Goo output outing aea between outputs is small a output outing aea between outputs is lage 14. Themal layout bit big goun The themal pa must be connecte to goun in oe to popely set the IC efeences. It is necessay to allow the heat to flow feely to all sies of the boa incluing top an bottom. Fo optimum heat issipation it is ecommene that the PC has some sole via holes. Figue 138. Themal layout (1 of 3 top an bottom layes) Themal layout on top laye Themal layout on bottom laye 58/61
59 N2480 Design guieline fo PC schematic an layout Figue 139. Themal layout (2 of 3 themal an soleing holes) 24 via holes ϕ:1.0 mm The themal esistance junction at the bottom of the ST333W to the ambient obtainable with a goun coppe aea of 4 x 4 cm an with 24 via holes (see Figue 139) Figue 140. Themal layout (3/3 heat flow iection) Goo themal layout (top) heat can flow feely to the sies a themal layout (top) heat flow cut off by the snubbes Goo themal layout (bottom) plenty of coppe aea a output outing (bottom) little coppe aea on 3 sies 59/61
60 Revision histoy N Revision histoy Table 3. Document evision histoy Date Revision Changes 12-Dec Initial elease. 60/61
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STPS30M60DJF. High efficiency power Schottky diode. Features. Description. Very low conduction losses Low forward voltage drop Low thermal resistance
STPS3M6DJF High efficiency power Schottky diode Datasheet production data Features Very low conduction losses Low forward voltage drop Low thermal resistance K High specified avalanche capability High
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Power Schottky rectifier Datasheet production data Features Very low conduction losses Negligible switching losses Extremely fast switching Low thermal resistance valanche capacity specified High junction
STPSC V power Schottky silicon carbide diode. Features. Description
6 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode Description The SiC diode is an ultrahigh
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BS69 Low capacitance small signal Schottky diodes Features Low diode capacitance Designed for RF applications Low profile packages Very low parasitic inductor and resistor Description The BS69 series use
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600 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode Description The SiC diode is an ultrahigh
STPS30L30DJF. High efficiency power Schottky diode. Features. Description
STPS3L3DJF High efficiency power Schottky diode Datasheet production data Features Low forward voltage drop Very small conduction losses Negligible switching losses valanche rated Extremely fast switching
BAT54 Series. Small signal Schottky diodes. Main product characteristics. Features and benefits. Description. Order codes
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AN3383 Application note
Application note STA350BW 2.0-channel demonstration board Introduction The purpose of this application note is to describe: how to connect the STA350BW 2.0-channel demonstration board how to evaluate the
STTH1003S-Y. Automotive high efficiency rectifier. Features. Description A K
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STTH1003S. Hight efficiency rectifier. Features. Description
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BAS70. Low capacitance, low series inductance and resistance Schottky diodes. Features. Description
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TN1625 TYN616, TYN816
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X A sensitive gate SCR. Features. Applications. Description I T(RMS) = 0.8 A V DRM, V RRM = 600 V. I GT 30 to 200 µa
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STPS745. Power Schottky rectifier. Main product characteristics. Features and Benefits. Description. Very small conduction losses
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STPS8L30. Low drop power Schottky rectifier. Main product characteristics. Features and benefits. Order codes. Description IPAK STPS8L30H DPAK
STPS8L3 Low drop power Schottky rectifier Main product characteristics I F(V) V RRM 8 3 V K K T j 5 C V F (max) Features and benefits Low cost device with low drop forward voltage for less power dissipation
STPS3L60. Power Schottky rectifier. Features. Description. Negligible switching losses Low forward voltage drop Avalanche capability specified
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Nchannel 20 V, 0.030 Ω, 5 SOT236L 2.5 V drive STripFET II Power MOSFET Preliminary data Features Type V DSS R DS(on) I D pplicatio Switching 20 V Description < 0.035 Ω @ 4.5 V < 0.045 Ω @ 2.5 V 5 This
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STPS30M60S. Power Schottky rectifier. Features. Description. High current capability Avalanche rated Low forward voltage drop High frequency operation
STPS30M60S Power Schottky rectifier Features High current capability valanche rated Low forward voltage drop High frequency operation Description The STPS30M60S is a single Schottky diode, suited for high
STN4NF20L. N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET II Power MOSFET. Features. Application. Description
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STD20NF20 STF20NF20, STP20NF20
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AN3385 Application note
Application note 50 W + 50 W dual BTL class-d audio amplifier demonstration board based on the TDA7492 Introduction This application note describes the STEVAL-CCA027V1 demonstration board designed for
STW26NM50. N-channel 500 V, 0.10 Ω, 30 A TO-247 MDmesh Power MOSFET. Features. Application. Description
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N-channel 650 V, 0.57 Ω, 10, TO-220FP Zener-protected SuperMESH Power MOSFET Features Order code V DSS R DS(on) max. Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low
STW47NM60ND. N-channel 600 V, Ω, 35 A TO-247 FDmesh II Power MOSFET (with fast diode) Features. Application. Description
Nchannel 600 V, 0.075 Ω, 35 TO247 FDmesh II Power MOSFET (with fast diode) Features Order code V DSS @ T JMX R DS(on) max STW47NM60ND 650 V < 0.088 Ω 35 The worldwide best R DS(on) *area amongst the fast
STL3NK40. N-channel 400 V, 4.5, 2.3 A PowerFLAT (5x5) SuperMESH Power MOSFET. Features. Applications. Description
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STY139N65M5. N-channel 650 V, Ω typ., 130 A, MDmesh V Power MOSFET in Max247 package. Features. Applications. Description
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AN4200 Application note
Application note Four-layer demonstration board based on the STA333IS Introduction The STEVAL-CCA053V1 is a four-layer demonstration board designed for the evaluation of the STA333IS two-channel, high-efficiency
BAR42 BAR43. Small signal Schottky diode. Description. Features
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24-Bit, 96 khz Stereo DAC for Audio
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2 W mono amplifier Features 2 W output power into 8 Ω at 12 V, THD = 10% Internally fixed gain of 32 db No feedback capacitor No boucherot cell Thermal protection AC short-circuit protection SVR capacitor
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5 A low dropout fast response positive voltage regulator adjustable Features Typical dropout 1.2 V Fast transient response Three terminal adjustable Guaranteed output current up to 5 A Output tolerance
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STP5NK65ZFP N-channel 650 V, 1.5 Ω, 4.5 A TO-220FP Zener-protected SuperMESH Power MOSFET Features Applications Description
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KF25B, KF33B KF50B, KF80B
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Part numbers Order codes Packages Temperature range. LM137 LM137K TO-3-55 C to 150 C LM337 LM337K TO-3 0 C to 125 C LM337 LM337SP TO C to 125 C
LM137 LM337 Three-terminal adjustable negative voltage regulators Features Output voltage adjustable down to V REF 1.5 A guaranteed output current 0.3%/V typical load regulation 0.01%/V typical line regulation
LM723CN. High precision voltage regulator. Features. Description
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Matched Monolithic Quad Transistor MAT14
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TDA2050V. 32 W hi-fi audio power amplifier. Features. Description
32 W hi-fi audio power amplifier Features High output power (50 W music power IEC 268.3 rules) High operating supply voltage (50 V) Single or split supply operations Very low distortion Short-circuit protection
Low noise low drop voltage regulator with shutdown function. Part numbers
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L4940xx5 L4940V5 L4940D2T5-TR 5 V L4940xx85 L4940V85 L4940P85 L4940D2T85-TR 8.5 V L4940xx10 L4940D2T10-TR 10 V L4940xx12 L4940D2T12-TR 12 V
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TDA W CAR RADIO AUDIO AMPLIFIER
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AN2810 Application note
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Order code Temperature range Package Packaging Marking
Micropower quad CMOS voltage comparator Datasheet production data Features Extremely low supply current: 9 μa typ./comp. Wide single supply range 2.7 V to 16 V or dual supplies (±1.35 V to ±8 V) Extremely
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. 1.5A Low drop positive voltage regulator adjustable and fixed Feature summary
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