STW26NM50. N-channel 500 V, 0.10 Ω, 30 A TO-247 MDmesh Power MOSFET. Features. Application. Description

Transcription

1 Nchannel 500 V, 0.10 Ω, 30 TO247 MDmesh Power MOSFET Features Type V DSS R DS(on) max I D STW26NM V < 0.12 Ω 30 High dv/dt and avalanche capabilities Improved ESD capability Low input capacitance and gate charge pplication Switching applications TO Description MDmesh technology applies the benefits of the multiple drain process to STMicroelectronics wellknown PowerMESH horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics. Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking Package Packaging STW26NM50 W26NM50 TO247 Tube October 2009 Doc ID 8291 Rev 11 1/

2 Contents STW26NM50 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /12 Doc ID 8291 Rev 11

3 Electrical ratings 1 Electrical ratings Table 2. bsolute maximum ratings Symbol Parameter Value Unit V DS Drainsource voltage (V GS = 0) 500 V V GS Gatesource voltage ±30 V I D Drain current (continuous) at T C = 25 C 30 I D Drain current (continuous) at T C = 100 C 18.9 I (1) DM Drain current (pulsed) 120 P TOT Total dissipation at T C = 25 C 313 W V ESD(GS) dv/dt (2) Derating factor 2.5 W/ C Gate source ESD (HBMC=100 pf, R=1.5 kω) 6000 V Peak diode recovery voltage slope 15 V/ns T stg Storage temperature 55 to 150 C T j Max. operating junction temperature 150 C 1. Pulse width limited by safe operating area 2. I SD 26, di/dt 200 /µs, V DD V (BR)DSS, T J T JMX Table 3. Thermal data Symbol Parameter Value Unit R thjcase Thermal resistance junctioncase max 0.4 C/W R thjamb Thermal resistance junctionambient max 62.5 C/W T l Maximum lead temperature for soldering purpose 300 C Table 4. valanche characteristics Symbol Parameter Value Unit I R E S valanche current, repetitive or notrepetitive (pulse width limited by T j max ) Single pulse avalanche energy (starting T J =25 C, I D =I R, V DD =50 V) mj Doc ID 8291 Rev 11 3/12

4 Electrical characteristics STW26NM50 2 Electrical characteristics (T CSE = 25 C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drainsource breakdown voltage Zero gate voltage drain current (V GS = 0) Gatebody leakage current (V DS = 0) I D = 250 µ, V GS = V V DS = Max rating V DS = Max rating, T C =125 C µ µ V GS = ± 20 V ± 10 µ V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µ V R DS(on) Static drainsource on resistance V GS = 10 V, I D = Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) fs C iss C oss C rss (2) C oss eq. Q g Q gs Q gd Forward transconductance V DS =15 V, I D =13 20 S Input capacitance Output capacitance Reverse transfer Capacitance Equivalent output capacitance Total gate charge Gatesource charge Gatedrain charge V DS = 25 V, f = 1 MHz, V GS = pf pf pf V GS = 0, V DS = 0 to 400 V 300 pf V DD = 400 V, I D = 26, V GS = 10 V, (see Figure 15) nc nc nc 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 2. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DS Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turnon delay time Rise time Turnoffdelay time Fall time V DD = 250 V, I D = 13, R G = 4.7 Ω, V GS =10 V, (see Figure 15) ns ns ns ns 4/12 Doc ID 8291 Rev 11

5 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM t rr Q rr I RRM Sourcedrain current Sourcedrain current (pulsed) Forward on voltage I SD = 26, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 26, di/dt = 100 /µs V DD = 100 V (see Figure 16) I SD = 26, di/dt = 100 /µs V DD = 100 V, T j = 150 C (see Figure 16) ns µc ns µc 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9. Gatesource Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BV GSO Gatesource breakdown voltage Igs=± 1 m (open drain) 30 V The builtin backtoback Zener diodes have specifically been designed to enhance not only the device s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 8291 Rev 11 5/12

6 Electrical characteristics STW26NM Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drainsource on resistance 6/12 Doc ID 8291 Rev 11

7 Electrical characteristics Figure 8. Gate charge vs gatesource voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Sourcedrain diode forward characteristics Figure 13. Normalized B VDSS vs temperature BVDSS (norm) M03838v ID = 1 m TJ( C) Doc ID 8291 Rev 11 7/12

8 Test circuits STW26NM50 3 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD VGS VD RG RL D.U.T µf 3.3 µf VDD Vi=20V=VGMX 2200 µf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ M01468v1 M01469v1 Figure 16. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive load test circuit 25 Ω G D D.U.T. S B FST DIODE B B D L=100µH µf µf VDD VD ID L 2200 µf 3.3 µf VDD G RG S Vi D.U.T. M01470v1 Pw M01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% M01472v1 0 10% M01473v1 8/12 Doc ID 8291 Rev 11

9 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. Doc ID 8291 Rev 11 9/12

10 Package mechanical data STW26NM50 TO247 mechanical data Dim. mm. Min. Typ. Max b b b c D E e 5.45 L L L øp ør S /12 Doc ID 8291 Rev 11

11 Revision history 5 Revision history Table 10. Document revision history Date Revision Changes 24Jun New stylesheet. 07Feb I D value changed 02Oct Modified: test condition of V (BR)DSS in Table 5 Doc ID 8291 Rev 11 11/12

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