STW47NM60ND. N-channel 600 V, Ω, 35 A TO-247 FDmesh II Power MOSFET (with fast diode) Features. Application. Description

Transcription

1 Nchannel 600 V, Ω, 35 TO247 FDmesh II Power MOSFET (with fast diode) Features Order code V T JMX R DS(on) max STW47NM60ND 650 V < Ω 35 The worldwide best R DS(on) *area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities. I D TO pplication Switching applications utomotive Description Figure 1. Internal schematic diagram This device is an Nchannel Power MOSFET realized using the second generation of MDmesh technology known as FDmesh II. This revolutionary Power MOSFET associates a new vertical structure to the company s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters. Table 1. Device summary Order code Marking Package Packaging STW47NM60ND 47NM60ND TO247 Tube February 2011 Doc ID Rev 2 1/

2 Contents STW47NM60ND Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /12 Doc ID Rev 2

3 Electrical ratings 1 Electrical ratings Table 2. bsolute maximum ratings Symbol Parameter Value Unit V DS Drainsource voltage (V GS = 0) 600 V V GS Gatesource voltage ± 25 V I D Drain current (continuous) at T C = 25 C 35 I D Drain current (continuous) at T C = 100 C 22 I (1) DM Drain current (pulsed) 140 P TOT Total dissipation at T C = 25 C 255 W dv/dt (2) Peak diode recovery voltage slope 40 V/ns T stg Storage temperature 55 to 150 C T j Max. operating junction temperature 150 C 1. Pulse width limited by safe operating area 2. I SD 35, di/dt 600 /µs, V DD = 80% V (BR)DSS Table 3. Thermal data Symbol Parameter Value Unit Rthjcase Thermal resistance junctioncase max 0.49 C/W Rthjamb Thermal resistance junctionambient max 50 C/W T l Maximum lead temperature for soldering purpose 300 C Table 4. valanche characteristics Symbol Parameter Value Unit I S E S valanche current, repetitive or notrepetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting T J =25 C, I D =I S, V DD =50 V) mj Doc ID Rev 2 3/12

4 Electrical characteristics STW47NM60ND 2 Electrical characteristics (T CSE = 25 C unless otherwise specified). Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drainsource breakdown voltage Zero gate voltage drain current (V GS = 0) Gatebody leakage current (V DS = 0) I D = 1 m, V GS = V V DS = Max rating V DS = Max C µ µ V GS = ± 20 V 100 n V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µ V Static drainsource on R DS(on) V resistance GS = 10 V, I D = Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) fs C iss C oss C rss C (2) oss eq. Q g Q gs Q gd R g Forward transconductance V DS =15 V, I D = S Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gatesource charge Gatedrain charge Gate input resistance V DS = 50 V, f = 1 MHz, V GS = pf pf pf V GS = 0, V DS = 0 to 480 V 530 pf V DD = 480 V, I D = 35, V GS = 10 V, (see Figure 15) f=1 MHz Gate DC Bias=0 Test signal level = 20 mv open drain nc nc nc 1.7 Ω 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DS 4/12 Doc ID Rev 2

5 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Turnon delay time Rise time Turnoff delay time Fall time V DD = 300 V, I D = 17.5 R G =4.7 Ω V GS = 10 V (see Figure 14) ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM t rr Q rr I RRM Sourcedrain current Sourcedrain current (pulsed) Forward on voltage I SD = 35, V GS = V Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 35, di/dt = 100 /µs V DD = 100 V (see Figure 16) I SD = 35, di/dt = 100 /µs V DD = 100 V, T j = 150 C (see Figure 16) ns µc ns µc 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID Rev 2 5/12

6 Electrical characteristics STW47NM60ND 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID () M01508v Operation in this area is limited by max RDS(on) 10µs 100µs 1ms 10ms VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drainsource on resistance gfs (S) TJ=50 C TJ=25 C M01511v1 RDS(on) (Ω) M01512v1 TJ=150 C ID() ID() 6/12 Doc ID Rev 2

7 Electrical characteristics Figure 8. Gate charge vs gatesource voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature VGS(th) (norm) 1.1 M01515v1 RDS(on) (norm) 2.1 M01516v TJ( C) Figure 12. Sourcedrain diode forward characteristics TJ( C) Figure 13. Normalized B VDSS vs temperature VSD (V) M01517v1 BV(DSS) (V) M01518v C 25 C TJ=150 C ISD() TJ( C) Doc ID Rev 2 7/12

8 Test circuits STW47NM60ND 3 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD VGS VD RG RL D.U.T µf 3.3 µf VDD Vi=20V=VGMX 2200 µf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ M01468v1 M01469v1 Figure 16. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive load test circuit 25 Ω G D D.U.T. S B FST DIODE B B D L=100µH µf µf VDD VD ID L 2200 µf 3.3 µf VDD G RG S Vi D.U.T. Figure 18. Unclamped inductive waveform M01470v1 Pw Figure 19. Switching time waveform M01471v1 V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% M01472v1 0 10% M01473v1 8/12 Doc ID Rev 2

9 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. Table 9. Dim. TO247 mechanical data mm Min. Typ. Max b b b c D E e 5.45 L L L P R S 5.50 Doc ID Rev 2 9/12

10 Package mechanical data STW47NM60ND Figure 20. TO247 drawing _F 10/12 Doc ID Rev 2

11 Revision history 5 Revision history Table 10. Document revision history Date Revision Changes 26Nov First release. 11Feb Updated coverpage, Table 5 and Section 4. Doc ID Rev 2 11/12

12 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS ND CONDITIONS OF SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE OF ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES OF MERCHNTBILITY, FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION), OR INFRINGEMENT OF NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. UNLESS EXPRESSLY PPROVED IN WRITING BY N UTHORIZED ST REPRESENTTIVE, ST PRODUCTS RE NOT RECOMMENDED, UTHORIZED OR WRRNTED FOR USE IN MILITRY, IR CRFT, SPCE, LIFE SVING, OR LIFE SUSTINING PPLICTIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FILURE OR MLFUNCTION MY RESULT IN PERSONL INJURY, DETH, OR SEVERE PROPERTY OR ENVIRONMENTL DMGE. ST PRODUCTS WHICH RE NOT SPECIFIED S "UTOMOTIVE GRDE" MY ONLY BE USED IN UTOMOTIVE PPLICTIONS T USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners STMicroelectronics ll rights reserved STMicroelectronics group of companies ustralia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Philippines Singapore Spain Sweden Switzerland United Kingdom United States of merica 12/12 Doc ID Rev 2