Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA
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1 nc. SEMICONDUCTOR TECHNICAL DATA The MPX2100 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output directly proportional to the applied pressure. The sensor is a single, monolithic silicon diaphragm with the strain gauge and a thin film resistor network integrated on chip. The chip is laser trimmed for precise span and offset calibration and temperature compensation. eatures Temperature Compensated Over 0 C to +85 C Easy to Use Chip Carrier Package Options Available in Absolute, Differential and Gauge Configurations Ratiometric to Supply Voltage ±0.25% Linearity (MPX2100D) Application Examples Pump/Motor Controllers Robotics Level Indicators Medical Diagnostics Pressure Switching Barometers Altimeters igure 1 illustrates a block diagram of the internal circuitry on the stand alone pressure sensor chip. igure 1. Temperature Compensated Pressure Sensor Schematic Order this document by MPX2100/D 0 to 100 kpa (0 to 14.5 psi) 40 mv ULL SCALE SPAN (TYPICAL) UNIBODY PACKAGE MPX2100A/D CASE 344 MPX2100AP/GP CASE 344B MPX2100DP CASE 344C VOLTAGE OUTPUT versus APPLIED DIERENTIAL PRESSURE The differential voltage output of the sensor is directly proportional to the differential pressure applied. The absolute sensor has a built in reference vacuum. The output voltage will decrease as vacuum, relative to ambient, is drawn on the pressure (P1) side. The output voltage of the differential or gauge sensor increases with increasing pressure applied to the pressure (P1) side relative to the vacuum (P2) side. Similarly, output voltage increases as increasing vacuum is applied to the vacuum (P2) side relative to the pressure (P1) side. 1 2 MPX2100ASX/GSX CASE 344 PIN NUMBER Gnd 3 +V out 4 V S V out REV 9 Motorola Sensor Device Data Motorola, Inc or More Information On This Product, NOTE: Pin 1 is noted by the notch in the lead. 1
2 nc. MAXIMUM RATINGS (NOTE) Rating Symbol Value Unit Maximum Pressure (P1 > P2) P max 400 kpa Storage Temperature T stg 40 to +125 C Operating Temperature T A 40 to +125 C NOTE: Exposure beyond the specified limits may cause permanent damage or degradation to the device. OPERATING CHARACTERISTICS (V S = 10 Vdc, T A = 25 C unless otherwise noted, P1 > P2) Characteristic Symbol Min Typ Max Unit Pressure Range (1) P OP kpa Supply Voltage (2) V S Vdc Supply Current I o 6.0 madc ull Scale Span (3) MPX2100A, MPX2100D V SS mv Offset (4) MPX2100D MPX2100A Series V off Sensitivity V/ P 0.4 mv/kpa Linearity (5) MPX2100D Series MPX2100A Series mv %V SS Pressure Hysteresis (5) (0 to 100 kpa) ±0.1 %V SS Temperature Hysteresis (5) ( 40 C to +125 C) ±0.5 %V SS Temperature Effect on ull Scale Span (5) TCV SS %V SS Temperature Effect on Offset (5) TCV off mv Input Impedance Z in Ω Output Impedance Z out Ω Response Time (6) (10% to 90%) t R 1.0 ms Warm Up 20 ms Offset Stability (7) ±0.5 %V SS NOTES: kpa (kilopascal) equals psi. 2. Device is ratiometric within this specified excitation range. Operating the device above the specified excitation range may induce additional error due to device self heating. 3. ull Scale Span (V SS ) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum rated pressure. 4. Offset (V off ) is defined as the output voltage at the minimum rated pressure. 5. Accuracy (error budget) consists of the following: Linearity: Output deviation from a straight line relationship with pressure, using end point method, over the specified pressure range. Temperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and from the minimum or maximum operating temperature points, with zero differential pressure applied. Pressure Hysteresis: Output deviation at any pressure within the specified range, when this pressure is cycled to and from the minimum or maximum rated pressure, at 25 C. TcSpan: Output deviation at full rated pressure over the temperature range of 0 to 85 C, relative to 25 C. TcOffset: Output deviation with minimum rated pressure applied, over the temperature range of 0 to 85 C, relative to 25 C. 6. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure. 7. Offset stability is the product s output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test. 2 or More Information On This Product, Motorola Sensor Device Data
3 LINEARITY Linearity refers to how well a transducer s output follows the equation: V out = V off + sensitivity x P over the operating pressure range. There are two basic methods for calculating nonlinearity: (1) end point straight line fit (see igure 2) or (2) a least squares best line fit. While a least squares fit gives the best case linearity error (lower numerical value), the calculations required are burdensome. Conversely, an end point fit will give the worst case error (often more desirable in error budget calculations) and the calculations are more straightforward for the user. Motorola s specified pressure sensor linearities are based on the end point straight line method measured at the midrange pressure. nc. igure 2. Linearity Specification Comparison ON CHIP TEMPERATURE COMPENSATION and CALIBRATION igure 3 shows the output characteristics of the MPX2100 series at 25 C. The output is directly proportional to the differential pressure and is essentially a straight line. ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉ The effects of temperature on ull Scale Span and Offset are very small and are shown under Operating Characteristics. igure 3. Output versus Pressure Differential igure 4. Cross Sectional Diagrams (Not to Scale) ÉÉÉÉ ÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉ igure 4 illustrates the absolute sensing configuration (right) and the differential or gauge configuration in the basic chip carrier (Case 344). A silicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the silicon diaphragm. The MPX2100 series pressure sensor operating characteristics and internal reliability and qualification tests are based on use of dry air as the pressure media. Media other than dry air may have adverse effects on sensor performance and long term reliability. Contact the factory for information regarding media compatibility in your application. Motorola Sensor Device Data or More Information On This Product, 3
4 nc. PRESSURE (P1)/VACUUM (P2) SIDE IDENTIICATION TABLE Motorola designates the two sides of the pressure sensor as the Pressure (P1) side and the Vacuum (P2) side. The Pressure (P1) side is the side containing the silicone gel which isolates the die. The differential or gauge sensor is designed to operate with positive differential pressure applied, P1 > P2. The absolute sensor is designed for vacuum applied to P1 side. The Pressure (P1) side may be identified by using the table below: Part Number Case Type Pressure (P1) Side Identifier MPX2100A MPX2100D 344 Stainless Steel Cap MPX2100DP 344C Side with Part Marking MPX2100AP MPX2100GP 344B Side with Port Attached MPX2100ASX MPX2100GSX 344 Side with Port Attached ORDERING INORMATION MPX2100 series pressure sensors are available in absolute, differential and gauge configurations. Devices are available in the basic element package or with pressure port fittings which provide printed circuit board mounting ease and barbed hose pressure connections. MPX Series Device Type Options Case Type Order Number Device Marking Basic Element Absolute, Differential 344 MPX2100A MPX2100D MPX2100A MPX2100D Ported Elements Differential, Dual Port 344C MPX2100DP MPX2100DP Absolute, Gauge 344B MPX2100AP MPX2100GP Absolute, Gauge Axial 344 MPX2100ASX MPX2100GSX MPX2100AP MPX2100GP MPX2100A MPX2100D 4 or More Information On This Product, Motorola Sensor Device Data
5 nc. PACKAGE DIMENSIONS B J C M A PIN 1 T R D 4 PL G N L DAMBAR TRIM ZONE: THIS IS INCLUDED WITHIN DIM. 8 PL Y Z J T R C N B P PORT #1 POSITIVE PRESSURE (P1) PIN 1 CASE ISSUE Z H A U L G D 4 PL CASE 344B 01 ISSUE B S K Q Motorola Sensor Device Data or More Information On This Product, 5
6 nc. PACKAGE DIMENSIONS CONTINUED PORT #2 V R B PORT #1 N PORT #2 VACUUM (P2) PIN 1 P T T J PORT #1 POSITIVE PRESSURE (P1) C J V C E T P W G D 4 PL A U S CASE 344C 01 ISSUE B A U G K L H PORT #1 POSITIVE PRESSURE (P1) Q K PIN 1 N S Q R B D 4 PL CASE ISSUE B 6 or More Information On This Product, Motorola Sensor Device Data
7 nc. NOTES Motorola Sensor Device Data or More Information On This Product, 7
8 nc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and the Stylized M Logo are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado or JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, , Minami Azabu. Minato ku, Tokyo Japan ASIA/PACIIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong Technical Information Center: HOME PAGE: 8 Motorola Sensor Device Data or More Information On This Product, MPX2100/D
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The MC34064 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution for low voltage detection
Low Power CMOS SEMICONDUCTOR TECHNICAL DATA
查询 MC14468 供应商 SEMICONDUCTOR TECHNICAL DATA 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 Order this document by MC14468/D Low Power CMOS The MC14468, when used with an ionization chamber and a small number of external components,
PIN CONNECTIONS ORDERING INFORMATION FUNCTIONAL TABLE
The MC12026 is a high frequency, low voltage dual modulus prescaler used in phase locked loop (PLL) applications. The MC12026A can be used with CMOS synthesizers requiring positive edges to trigger internal
PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount
PD Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM1250-04QG Features Low I/O capacitance at 5pF at 0V In-system ESD protection to ±8kV contact discharge, per the IEC 61000-4-2 international
LM337MT MEDIUM CURRENT THREE TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATOR
Order this document by /D The is an adjustable threeterminal negative voltage regulator capable of supplying in excess of 5 ma over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally
MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT
Order this document by MC3464/D The MC3464 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution
MARKING DIAGRAMS LOGIC DIAGRAM ORDERING INFORMATION DIP PIN ASSIGNMENT CDIP 16 L SUFFIX CASE 620 MC10124L AWLYYWW
The MC024 is a quad translator for interfacing data and control signals between a saturated logic section and the MECL section of digital systems. The MC024 has TTL compatible inputs, and MECL complementary
MARKING DIAGRAMS LOGIC DIAGRAM ORDERING INFORMATION DIP PIN ASSIGNMENT CDIP 16 L SUFFIX CASE 620 MC10216L AWLYYWW
The MC1016 is a high speed triple differential amplifier designed for use in sensing differential signals over long lines. The base bias supply (V BB ) is made available at pin 11 to make the device useful
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
RF LDMOS Wideband 2-Stage Power Amplifiers
Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance
MDC5101R2 SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICL DT Order this document by MDC511/D The MDC511 inputs TxE and RxE Logic Signals with an accessory input termination option and, allows positive and negative control voltages in accordance
EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications.
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
MC MOTOROLA CMOS SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MC456/D CMOS The MC456 is a phase locked loop (PLL) frequency synthesizer constructed in CMOS on a single monolithic structure. This synthesizer finds
Distributed by: www.jameco.com 1--31-4242 The content and copyrights of the attached material are the property of its owner. Order this document by M3/D The M3 is an integrated circuit featuring wide range
DPAK For Surface Mount Applications
SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H/D DPAK For Surface Mount Applications... for general purpose power and switching such as output or driver stages in applications such as switching
QUAD EIA 422 LINE DRIVER WITH THREE STATE OUTPUTS
Order this document by MC3487/D Motorolas Quad EIA422 Driver features four independent driver chains which comply with EIA Standards for the Electrical Characteristics of Balanced Voltage Digital Interface
EMC5DXV5T1, EMC5DXV5T5
EMC5DXV5T, EMC5DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor)
BAV70DXV6T1, BAV70DXV6T5 Preferred Device. Monolithic Dual Switching Diode Common Cathode. Lead-Free Solder Plating.
BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode LeadFree Solder Plating MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage V R 70 Vdc Forward
SEMICONDUCTOR TECHNICAL DATA MECL PLL COMPONENTS PRESCALER WITH STAND BY MODE
SEMIONDUTOR TEHNIAL DATA The M1203 is a 2 prescaler for low power frequency division of a 1.1GHz high frequency input signal. On chip output termination provides output current to drive a 2pF (typical)
NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS
MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0
Freescale Semiconductor, I
查询 MRF1550FT1 供应商 nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1550T1/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MUR/D... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features:
MC3456 DUAL TIMING CIRCUIT
Order this document by /D The dual timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional terminals are provided for triggering or resetting
Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (1) at 70 C Case RθJC 7.0 C/W. Characteristic Symbol Min Typ Max Unit
SEICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for 9 Hz base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold