Fnl(VGo,VDo,Vg,Vd,W) Fnl(VGo,VDo,Vg,Vd,W,T)
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1 What about Temperature What about Temperature Static Dynamic Geometry Self Heating L.F. Dispersion Channel Geometry Scaling Rules Fnl(VGo,VDo,Vg,Vd,W) Large Signal Static & Dynamic EXTERNAL & INTERNAL TEMPERATURE Static Dynamic Geometry To Fnl(VGo,VDo,Vg,Vd,W,T) BRNO- march 11 1
2 Thermal Measurement Thermal Measurement DC [S] Pulsed I/V BRNO- march 11
3 Id ( ma ) Id ( ma ) Modelización MESFET/HEMT What about Temperature What about Temperature - The height of the curves changes - The slope of the curves changes - Gm changes Fon(T) 5 5 Bias Point Vds ( V ) DC Characteristics ºC ºC Vds ( V ) Pulsed I/V Characteristics ºC ºC BRNO- march 11
4 What about Temperature What about Temperature Igd G-D Breakdown Linear elements: R s=ro+r1(t-tnom) C s=co+c1(t-tnom) Lg Ig Vg Rg Igs Gate current Cgs Ri Vgs Cgd Rgd Ids,τ Rs High frequency Cds Clf Ids[Vgs(t- τ),vds] Rd Vds Ilf Ld Vd Id Nonlinear elements: C s=co+c1(t-tnom) Ipk=Ipko+Ipk1(T-Tnom) α=αo+α1(t-tnom)... T=Instantaneous Temp. Thermal subcircuit Ith = Ig(t).Vg(t)+Id(t)*Vd(t) Ls Ilf(Vgs DC,Vds DC,Vgs,Vds) Ith Cth Rth T Vtsnk BRNO- march 11 4
5 Validation with Temperature Validation with Temperature DC curves for two different external temperatures T= ºC T= +6ºC BRNO- march 11 5
6 Validation with Temperature Validation with Temperature Pulsed I/V curves for two different external temperatures and two different Bias Points CLASS C Operation CLASS A Operation T= +6ºC T= ºC BRNO- march 11 6
7 Modern Communication Systems Tx Rx Digital modulation Higher spectral and Power eficiency Base-Band stages using DSP Critical specifications for RF stages Base-Band STAGES DSP X FI STAGES RF Stages Phase Noise Spectral Regrowth Linearity OL f RF BRNO- march 11 7
8 Single Carrier Analog Modulation Linearity Problems?. The NL Model does not reproduces the IMD behaviour? t Nonlinear Transfer Block Pout [dbm] Pin [dbm] Multicarrier Digital Modulation t Time varing envelope Signal Peak Levels exceeds the mean power level Compression --> trimming of peaks Very complex distortion phenomena BRNO- march 11 8
9 How to improve the Linearity? Today: Power Backoff... External Linearisation (Block Level)... Inefficient Complexity New Trends: Optimisation of Active Device Properties... External Linearisation (Chip Level)... Precise Precise Control Control of of active active device device Characteristics Characteristics BRNO- march 11 9
10 In-Band Distortion Co-Channel f1 and f Adjacent Channel f1-f and f-f1 f 1 f f Nonlinear Device f -f 1 f 1 -f f -f 1 f 1 +f Pout [dbm] f 1 IP DC f 1 f In-Band IMD f 1 f (depends on the High order slopes of the main nonlinearities) f C/I 1 db/db db/db f 1 -f Classical Two TwoTone Tone Test Test Figures of Merit: - Pout - IP Small Signal Large Signal BRNO- march 11 Pin [dbm] 1
11 IMD Distortion Ampl F1 F F1-F F1-F F-F1 F1 F1+F F F1 F1+F F1+F F Ids = Idso + Gm1.Vgs + Gm.Vgs + Gm.Vgs + Gd1.Vds + Gd.Vds + Gd.Vds + Gmd.Vgs.Vds + Gmd.Vgs.Vds + Gmd.Vgs.Vds BRNO- march 11 11
12 IMD for Multitone Input Signal P DC Digital Signal Adjacent Channel Distortion ACPR = P DC - P AC ACPR = P DC - P AC P AC rd Order Deriv. f Nonlinear Element NPR NPR f White Noise Band Limited f Co-Channel Distortion f - - Co-channel and adjacent channel distortion are quantified through new figures of merit (ACPR & NPR) - - Some relations between two-tone and multitone IMD have been established (Pedro & Carvalho, IEEE Trans. MTT, Dec 99). BRNO- march 11 1
13 IMD Control on on MESFETs/HEMTs Models Experimental Procedures for the LOCAL characterisation of main device Nonlinearities Fast and Accurate Nonlinear Analysis Tools GLOBAL Large Signal Modeling coherent with LOCAL behaviour Optimisation of the Device Linearity Properties for Typical Applications BRNO- march 11 1
14 Ids Ids = FNL(Vgs,Vds) Idso Vgs TAYLOR Vds Vdso Ids = Idso + Gm1.Vgs + Gm.Vgs + Gm.Vgs + Gd1.Vds + Gd.Vds + Gd.Vds + Gmd.Vgs.Vds + Gmd.Vgs.Vds + Gmd.Vgs.Vds BRNO- march 11 14
15 Nonlinear LOCAL Characterisation: Current Source Ids(Vgs,Vds) Oscillator Oscillator DC Power Supply 155 MHz 147 MHz LPF LP Bias-Tee Directional Coupler LPF Duplexer LP LP Attenuator Bias-Tee DUT Attenuator HP Attenuator G MHz Spectrum Analyzer Switch High Linearity Low Noise Amplifier BRNO- march 11 15
16 Measurements F1 F F1 F1+F F1 F1+F F1+F F F First band Second band Third band Math. Formulation Gm Gmd Gd H(w1,w1) = [K H (Wi,Wj)]. H(w1,w) H(w,w) Gm H(w1,w1,w1) Gmd H(w1,w1,w) = [K Gmd H (wi,wj,wk)] - [K H1 (wi)] H(w1,w,w) Gd H(w,w,w) H(w1,w1) H(w1,w) H(w,w) BRNO- march 11 16
17 F1 F1+F F Spectrum Power Measurements HEMT: DOAH. Pmeas vs. Vgs HEMT: DOAH. Pmeas vs. Vgs HEMT: DOAH. Pmeas vs. Vgs & Vds. f = F. PML HEMT Device Pmeas [µw] 15 1 Pmeas [µw] 1.5 Pmeas [µw] F1 F1+F F1+F F Vds [V] Vds [V] Vds [V] α Gm α Gmd α Gd α Gm α Gmd α Gmd α Gd HEMT: DOAH. Pmeas vs. Vgs & Vds. f = F1. HEMT: DOAH. Pmeas vs. Vgs & Vds. f = F1+F. HEMT: DOAH. Pmeas vs. Vgs & Vds. f = F1+F. HEMT: DOAH. Pmeas vs. Vgs & Vds. f = F. Pmeas [nw] Pmeas [nw] Pmeas [nw].. Pmeas [nw] Vds [V] BRNO- march Vds [V] Vds [V] Vds [V]
18 Ids HEMT: DOAH. IDS vs. Vgs & Vds. HEMT: DOAH. Gm vs. Vgs & V Gm1 Gds HEMT: DOAH. Gds vs. Vgs & Vds IDS [ma] Gm [ms] 4 Gds [ms] Vds [V] HEMT Vds [V] Vds [V] HEMT: DOAH. Gm vs. Vgs & Vds. HEMT: DOAH. Gmd vs. Vgs & Vds. Gm Gmd Gd HEMT: DOAH. Gd vs. Vgs & Vds Gm [ms/v] 4 Gmd [ms/v] 5 Gd [ms/v] Vds [V] Vds [V] Vds [V] BRNO- march 11 18
19 Gm HEMT: DOAH. Gm vs. Vgs & HEMT: DOAH. Gmd vs. Vgs & Gmd Gm [ms/v²] 1 5 Gmd [ms/v²] Vds [V] HEMT Vds [V] Gmd HEMT: DOAH. Gmd vs. Vgs & Vds. HEMT: DOAH. Gd vs. Vgs & Vds. Gd 1 Gmd [ms/v²] 1 Gd [ms/v²] Vds [V] Vds [V] BRNO- march 11 19
20 MESFET: NE784 P L Modelización MESFET/HEMT Amplifiers: Role of the Ids Nonlinearity PHEMT: DAH 6x15µm P L C/I Sweet Spot C/I f1, f =,.1 GHz Pin = dbm/tone BRNO- march 11
21 Large-signal IMD Gm [S/V ] Gm(t) [S/V ] OP OP-Aver. Aver. V GS [V] t/t - In large-signal regime, the input signal produces a significant excursion in the control voltages - The derivatives in the bias point (Gm1, Gm, etc) have not the traditional meaning - A better description could approximately be obtained with a sort of average value of the time-varying coefficients Large Signal Sweet-Spot BRNO- march 11 1
22 Large-signal IMD Gm [S/V ] Vp: (Gm=) - Three different IMD Pin-Pout 1.- V GS > Vp: Gm <, Pout(IMD) has no minimum IM [dbm] V GS [V].- V GS < Vp : Gm >, Pout(IMD) has one minimum. It appears at a power level proportional to the difference between V GS and Vp..- V GS > Vp (V GS Vp), Gm < (Gm ). Two minima could appear. Pin [dbm] Large Signal Sweet-Spot BRNO- march 11
23 Nonlinear LOCAL Characterisation : Reactive Term Qg(Vgs,Vgd) Qg( Vgs, Vgd) = Qg( V GS, V GD ) + Cgs1. vgs + Cgd1. vgd + Cgs. vgs + Cgsgd. vgs. vgd + Cgd. vgd + + Cgs. vgs + Cgsgd. vgs. vgd + Cgsgd. vgs. vgd + Cgd. vgd +... Secondary Role (masked by Ids(Vgs,Vds)) Solution Increase the input frequency To use measurements where the contribution of reactive nonlinearity is high when compared with the main nonlinearity: GATE Complete Characterisation Simplified Characterisation Saturation region : Cgs(Vgs) = Cgs1 +.Cgs.vgs +.Cgs.vgs BRNO- march 11
24 Experimental Characterisation Experimental Characterisation Oscillator Oscillator LPF LP Attenuator Duplexor LP HP Attenuator Direccional Coupler Bias-Tee G DUT D Bias-Tee 5 Ω G Switch High Linearity Low Noise Amplifier Spectrum Analyzer BRNO- march 11 4
25 PHEMT: DAH 7 Cgs1 Modelización MESFET/HEMT Measurement Results Measurement Results Cgs1 [ff] Derivatives: Different behaviour to Gm1, Gm and Gm Accurate extraction of Rs to achieve coherent results 8 Cgs VGS [V] 7 6 Cgs [ff/v] Cgs VGS [V] 1 5 Possibility: To control the role of Cgs(Vgs) on SS IMD To evaluate the Capacitor NL Models Cgs [ff/v ] -5 Cgs= VGS [V] BRNO- march 11 5
26 Cgs1.4.5 Cgs1 [pf]..5 Cgs VGS [V] Legende : Cgs [pf/v] Cgs Schottky VGS [V] x- Scheinberg -+- Statz/Angelov o Measurements Very Good reproduction for the derivatives Cgs [pf/v ] Cgs= VGS [V] BRNO- march 11 6
27 Amplifiers: Role of the main Cgs Nonlinearity MESFET: NE784 C/I PHEMT: DAH 6x15 µm C/I Sweet Spot shift at high frequency Need for Accurate characterisation and modelling of Cgs (derivatives) Ids Predominant Non-critical modeling of Cgs BRNO- march 11 7
28 Amplifiers: Moltitone Input Signal - RF Input Signal Espectro QPSK Espectro QPSK RF Response Espectro QPSK Pin [dbm] Fase [º] G D Pout [dbm] S Frec. [GHz] Frec. [GHz] -8 Amplitude Phase Coherent Characterisation and and Modeling + Appropiate Analysis Tools Tools Frec. [GHz] Frec. [GHz] = Amplitude Good IMD Prediction BRNO- march 11 8
29 Device level linearization techniques - Particular derivative-based solutions - One or more auxiliary parallel FET s are added, with a size and bias such that large signal Gm aux -Gm main 5 th order rd order Hybrid circuit implementation of the derivative cancellation technique BRNO- march 11 9
30 Potentialities for active antenna implementation - The properties of printed radiators in terms of load impedance or power combining may be used to implement a sort of spatial device level linearization technique. e. g., the use of dual-feed radiators for the superposition approach Two PHEMT-based amplifiers Aperture coupled patch In-phase dual feed BRNO- march 11
31 Conclussions: Modelling Depends on: - Technology - Main effects to be covered - Secondary effects to be controlled - Measurement capabilities - Imagination There is not The model but most of times The dedicated model BRNO- march 11 1
32 BRNO- march 11
33 BRNO- march 11
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