UA1L65VM Broadband Amplifier Module Data Sheet

Transcription

1 UA1L65VM Broadband Amplifier Module Data Sheet Introduction The UA1L65VM Amplifier is a general-purpose broadband amplifier designed for microwave communications, test equipment, and military systems. Its small size and exceptional performance make it a versatile gain block which can improve power and gain in a single package potentially replacing 2 or 3 narrower band amplifiers. The UA1L65VM provides a complete amplifier module package with a wide frequency range of 1GHz to 65 GHz, low power dissipation, ample output power, low noise figure and gain control. Applications mm-wave systems High frequency test instrumentation Broadband gain amplifier Features 23 dbm saturated output power 27 db gain (to 45 GHz) 3.4 W power dissipation Useful gain to 65GHz Small size package 4.5 db NF Electrical 25 o C Vd1=Vd2=Vd3 = 7V, Vg1=Vg2=Vg3 =.5 V, Z = 5 Ω Parameter Description Minimum Typical Maximum S21 (db) Small Signal Gain 1 26 GHz GHz S11 (db) Input Match 1 26 GHz GHz -1-8 S22 (db) Output Match 1 26 GHz GHz -1 P sat (dbm) Saturated Power Output 23 Centellax Inc. 451 Aviation Blvd., Suite 11, Santa Rosa, CA sales@centellax.com Tel Fax Specifications subject to change without notice. Copyright 23 Centellax Inc. Printed in USA Rev 11-3

2 4 3 S21 (db) Frequency (MHz) Bias: Vd1= Vd2= Vd3 =7V, Vg1=Vg2=Vg3 =.5 V Bias: Vd1= Vd2= Vd3 =7V, Vg1=Vg2=Vg3 =.5 V -1 S11 (db) Bias: Vd1= Vd2= Vd3 =7V, Vg1=Vg2=Vg3 =.5 V Bias: Vd1= Vd2= Vd3 =7V, Vg1=Vg2=Vg3 =.5 V S22 (db) -2-3 Noise Figure (db) Bias: Vd1= Vd2= Vd3 =7V, Vg1=Vg2=Vg3 =.5 V Bias: Vd1= Vd2= Vd3 =7V, Vg1=Vg2=Vg3 =.5 V Note: S-parameter measurement files are available upon request. support@centellax.com for more information.

3 OIP2 = 49.3 dbm OIP3 (TOI) = 3.7 dbm f1 f2 f1-f2 f1+f2 2f1-f2 2f2-f IMD Performance of 1 GHz OIP2 = 51.7 dbm OIP3 (TOI) = 31.8 dbm f1 f2 f1-f2 f1+f2 2f1-f2 2f2-f IMD Performance of 4 GHz 28 Psat Measurements GHz 8 GHz 14 GHz 2 GHz 26 GHz 32 GHz 38 GHz 44 GHz 5 GHz Operating Specifications Bias: Vd1= Vd2= Vd3 =7V, Vg1=Vg2=Vg3 =.5 V Parameter Description Minimum Typical Maximum Vdd1 (V) First Drain Voltage Vdd2 (V) Second Drain Voltage Vdd3 (V) Third Drain Voltage Id1 (ma) First Drain Current 85 Id2 (ma) Second Drain Current 15 Id3 (ma) Third Drain Current 24 Vg1 (V) First Gate Voltage 1.2 to +.5 Vg2 (V) Second Gate Voltage 1.2 to +.5 Vg3 (V) Third Gate Voltage 1.2 to +.5 Pdc (W) Power Dissipation 3.4 Tbs ( o C) Case Temperature 75** ** Four threaded holes are provided for convenient heatsink attachment. The package body temperature must not exceed Tbs maximum.

4 Physical Characteristics (all measurements in inches[mm]) UA1L65VM Pin Definition Pin Function Operational Notes RFin RF Input V-Connector (f) RFout RF Output V-Connector (m) 1 (Vg1) 1st stage gate bias Adjust for optimum gain (-.2 V to V typical) 2 (Vg2) 2nd stage gate bias Adjust for optimum gain (-.2 V to V typical) 3 (Vg3) 3rd stage gate bias Adjust for optimum gain (-.2 V to V typical). 4 (Det) RF Power Detector (option) 5 (Vd1) 1st stage drain bias Set at typical operating specification, adjust for desired amplitude 6 (Vd2) 2nd stage drain bias Set at typical operating specification, adjust for desired amplitude 7 (Vd3) 3rd stage drain bias Set at typical operating specification, adjust for desired amplitude 8 (Ref) RF Power Reference (option) Bias Recommendations (in order): 1) Bias gates; 2) Bias Drains; 3) Adjust for the optimum gain Centellax Inc. 451 Aviation Blvd., Suite 11, Santa Rosa, CA sales@centellax.com Tel Fax Specifications subject to change without notice. Copyright 23 Centellax Inc. Printed in USA Rev 11-3

5 UA1S65LM Broadband Amplifier Module Data Sheet Introduction The UA1S65LM Amplifier is a general-purpose broadband amplifier designed for microwave communications, test equipment, and military systems. Its small size and exceptional performance make it a versatile gain block which can improve power and gain in a single package potentially replacing 2 or 3 narrower band amplifiers. The UA1S65LM provides a complete amplifier module package with a wide frequency range of 1 GHz to 65 GHz, low power dissipation, ample output power, low noise figure and gain control. Simplicity of design, utilizing patented LF-X circuitry, reduces the number of components, making this amplifier suitable for low-cost manufacturing. Applications mm - wave systems High frequency test instrumentation Broadband gain amplifier Features 16 dbm saturated output power 17 db gain (to 45 GHz) 1.2 W Power Dissipation Useful Gain to 65 GHz 4.5 db Noise Figure Small Size Package Electrical o C Parameter Description Min. Typ Max. S21 (db) Small Signal Gain 1 26 GHz GHz S11 (db) Input Match 1 26 GHz GHz -1-8 S22 (db) Output Match 1 26 GHz GHz Psat (dbm) Saturated Power Output 16 Centellax Inc. 451 Aviation Blvd., Suite 11, Santa Rosa, CA sales@centellax.com Tel Fax Specifications subject to change without notice. Copyright 23 Centellax Inc. Printed in USA Rev 11-3

6 S21 (db) S21 (db) Frequency (MHz) Low frequency S21 measurement Bias: Vd1 = Vd2 = 7V, Vg1 = Vg2 = -.5V, Vb1/Vb2 = float Normalized Group Delay (ps) S11 (db) Bias: Vd1 = Vd2 = 7V, Vg1 = Vg2 = -.5V, Vb1/Vb2 = float Bias: Vd1 = Vd2 = 7V, Vg1 = Vg2 = -.5V, Vb1/Vb2 = float S22 (db) -2-3 Noise Figure (db) Bias: Vd1 = Vd2 = 7V, Vg1 = Vg2 = -.5V, Vb1/Vb2 = float Bias: Vd1 = Vd2 = 7V, Vg1 = Vg2 = -.5V, Vb1/Vb2 = float Note: S-parameter measurement files are available upon request. support@centellax.com for more information. Centellax Inc. 451 Aviation Blvd., Suite 11, Santa Rosa, CA sales@centellax.com Tel Fax

7 Operating Specifications Parameter Description Minimum Typical Maximum Vdd1 (V) First Drain Voltage Vdd2 (V) Second Drain Voltage Id1 (ma) First Drain Current 85 Id2 (ma) Second Drain Current 85 Vg1 (V) First Gate Voltage 1.2 to +.5 Vg2 (V) Second Gate Voltage 1.2 to +.5 Pdc (W) Power Dissipation 1.2 Tbs ( o C) Case Temperature 75** 2 Psat Measurements GHz 8 GHz 14 GHz 2 GHz 26 GHz 32 GHz 38 GHz 44 GHz Bias: Vd1 = Vd2 = 7V, Vg1 = Vg2 = -.5V, Vb1=Vb2 = float OIP2 = 4.9 dbm OIP3 (TOI) = 24.6 dbm f1 f2 f1-f2 f1+f2 2f1-f2 2f2-f IMD Performance of 1 GHz OIP2 = 4.2 dbm OIP3 (TOI) = 24.3 dbm f1 f2 f1-f2 f1+f2 2f1-f2 2f2-f IMD Performance of 4 GHz ** Four threaded holes are provided for convenient heatsink attachment. The package body temperature must not exceed Tbs maximum. Centellax Inc. 451 Aviation Blvd., Suite 11, Santa Rosa, CA sales@centellax.com Tel Fax

8 Physical Characteristics (all measurements in inches) UA1S65LM Pin Definition Pin Function Operational Notes RFin RF Input V-Connector (f) RFout RF Output V-Connector (m) 1 (Vg1) 1st stage gate bias Set at typical operating specification. 2 (Vb1) 1st stage, 2nd gate bias Optional gain/flatness adjustment, (may be left open) 3 (Vg2) 2nd stage gate bias Set at typical operating specification. 4 (Vb2) 2nd stage, 2nd gate bias Optional gain/flatness adjustment, (may be left open) 5 (Vd1) 1st stage drain bias Set at typical operating specification 6 (Vd2) 2nd stage drain bias Set at typical operating specification Bias Recommendations (in order): 1) Bias gates; 2) Bias Drains; 3) Adjust for optimum gain Centellax Inc. 451 Aviation Blvd., Suite 11, Santa Rosa, CA sales@centellax.com Tel Fax Specifications subject to change without notice. Copyright 23 Centellax Inc. Printed in USA Rev 11-3