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Gervase Wilkinson
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1 NTFET LH : N I on < 5 ownloaded from jiaeee.com at 15: on Thursday ecember 6th 2018 LS 1 2

2 MOS LH- NTFET MOSFET N 1nm 15nm HfO2 2nm 2 15 nm 30nm 0/2 nm-1 15 nm nm-1 X 15 nm 15-X x 1/4 nm -1 MOSNT N Tight-binding NT VS IS LSNTFET LH- B A (X=3 nm) = 0/4 V (X=12 nm) (X=9 nm) (X=6 nm) NTFET's Journal of Iranian Association of Electrical and Electronics Engineers - Vol.15- No.2- Summer 2018 ownloaded from jiaeee.com at 15: on Thursday ecember 6th 2018,

3 LH- 11-0/15-0/125 V -0/075 V +0/4 B A -0/175 V -0/15 V V LH A B A B A LS LH- VS= 0/4 V ownloaded from jiaeee.com at 15: on Thursday ecember 6th 2018 B A LH VS (V) -LH-NTFET -LH-NTFET B-LH-NTFET A-LH-NTFET LH- = 0/4 V

4 ownloaded from jiaeee.com at 15: on Thursday ecember 6th 2018 = - 0/4 V VS= 0/4 V VS= 0/4 V +0/ A-LH- µa LH- Journal of Iranian Association of Electrical and Electronics Engineers - Vol.15- No.2- Summer 2018 LH-LS- NTFET LH- I off I on

5 PP = (Qon - Qoff ) *V PP Qo f f PP 11 20,21 g Qch Vg gm Id Vg Qch V=0/4 ( gm ) V A-LH- Nd V PP n( x ) LG (Qch ) n( x ) (Id ) 22 ft = 1 gm 2 g LH- ownloaded from jiaeee.com at 15: on Thursday ecember 6th 2018 (g ) Qon B A LH- VS= 0/4 V LH- LS- NTFET VS=0/4 V A--N=2*108m-1 A--N=1*108m-1 A--N=0.5*108m-1 5 Ion/Ioff A- VS= 0/4 V 10

6 LH- NTFET LH- LS- NTFET VS=0/4 V VS=0/4 V IBL B A 23 LH- IBL LSNTFET VTH LH- IBL IBL B A -LS -LS B-LS A-LS LS 0/20 0/18 0/14 0/11 0/07 IBL -LH- () LH- 5 µa Journal of Iranian Association of Electrical and Electronics Engineers - Vol.15- No.2- Summer 2018 ownloaded from jiaeee.com at 15: on Thursday ecember 6th 2018 LS-

7 , Guo, J., atta, S., Anantram, M. P., and Lundstrom, M., -effect transistors using non, vol. 3, no. 3/4, pp , atta, S., Electronic Transport in Mesoscopic Systems. ambridge, U.K., ambridge Univ. Press, evices, vol. 54, no. 6, pp , Jun Venugopal, R., Ren, Z., atta, S., Lundstrom, M. S., and Jovanovic,., nanoscale transistors: Real versus mode-space 3739, Schottky-barrier 5 nm gate carbon nano tube transistor with s vol. 100, no.2, pp , subthreshold current and capacitance modeling of shortchannel doubleomputer Modelling, vol.51, no.7 8, pp , scattering on intrinsic delay and cutoff frequency of evices, vol. 53, no. 10, pp , ownloaded from jiaeee.com at 15: on Thursday ecember 6th 2018 IEEE trance action on nano technology, vol. 11, no. 3, pp , Guo, J., atta, S., Lundstrom, M., Anantram, M. P., -scale simulations of carbon nanotube 1 Linear Halo Lightly oped rain and Source arbon Nano Tube Filed effect transistor 1 Iijima, S., "Helical Microtubules of Graphitic arbon," Nature (London), vol. 354, no. 6348, pp , Javey, A., Guo, J., Wang, Q., Lundstrom, M., ai, H., Ballistic carbon nanotube fieldnature, vol. 424, pp , Javey, A., and et al High dielectrics for advanced Nature Material, vol.1, pp , Fregonese, S., az Maneux,., Zimmer, T., Bourgoin, J.P., ollfus, P., and GaldinTransactions on Electron evices, vol. 55, no. 6, pp , Hasan, S., Salahuddin, S., Vaidyanathan, M., and Alam, -frequency performance projections for ballistic carbonon Nanotechnology, vol. 5, no.1, pp , Lin, Y. M., Appenzeller, J., Knoch, J., and Avouris, P., carbon nanotube field-effect Trans. Nanotechnol., vol. 4, no. 5, pp , Reduction of Leakage urrent of Journal of Iranian Association of Electrical and Electronics Engineers, vol.13, no.4, pp , and Improvement of Off-state urrent in Biaxially Strained Si Nano p-mosfet by Vir Electrical and Electronics Engineers, vol. 13, no. 4, pp , engineering of nanotube transistors for improved ppl. Phys. Lett., vol. 83, no. 24, pp , Hassaninia, I., Sheikhi, M. H., Kordrostami, Z. nanotube FETs with linear doping Electron., vol. 52, no. 6, pp , Yousefi, R., Saghafi, K., MoravvejNumerical Study of Lightly oped rain and Source Electron evice, vol.57, no.4, implantation on the carbon nanotube field-effect 41, pp , the cutoff frequency of double linear halo lightly doped drain and source NTF vol.4, no.118, pp. 1-5, Kordrostami, Z., Sheikhi, M.H., Zarifkar, A., of hannel and Underlap Engineering on the High-

Dependence of Carbon Nanotube Field Effect Transistors Performance on Doping Level of Channel at Different Diameters: on/off current ratio

Dependence of Carbon Nanotube Field Effect Transistors Performance on Doping Level of Channel at Different Diameters: on/off current ratio Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following