Opto-semiconductors Condensed Catalog

Transcription

1 Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K.

2 Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that time, Hamamatsu has developed and produced a wide range of opto-semiconductors such as photodiodes, photo ICs, image sensors, and LEDs, as well as mini-spectrometers and many other products using opto-semiconductors. Our lineup of opto-semiconductors covers a broad spectrum from the infrared through the visible and ultraviolet regions, extending to X-rays and even high energy particles. These are widely used in many fields ranging from scientific measurements, medical diagnosis, communications, and consumer electronics as well as in-vehicle applications. In the days ahead, besides improving our semiconductor process and mounting/packaging technologies to make them more sophisticated, we will fully utilize MOEMS (micro-opto-electro-mechanical systems) technology that merges photonics technology with MEMS technology to develop opto-semiconductors with even higher sensitivity, speeds, and functions. Koei Yamamoto Representative Director and Senior Managing Director Director of Solid State Division Hamamatsu Photonics K. K. 1 Contents Applications of Hamamatsu opto-semiconductors Opto-semiconductor selection guide Manufacturing process of opto-semiconductors Map / Annual sales / Organization chart

3 Opto-semiconductors evolving with the advancement of MOEMS technology MEMS technology Etching Nanoimprint Three-dimensional mounting technology Semiconductor micromachining to produce mechanical parts, optical elements, sensors, and wafer level packages Compact Highly functional High reliability MOEMS devices Downsize, integration Semiconductor process technology Assembly technology Module technology Si process Various packages Optics Compound semiconductor process Wide spectral range (UV/visible/infrared, X-ray, high energy) High sensitivity, high-speed response Highly functional devices based on CMOS circuit technology Assembly Analysis General-purpose and highly reliable packages, surface mount type, CSP, flip-chip bonding Flexible customization Ready for low- and high-volume production Optimum optical design and effective simulation Circuitry Analog and digital circuits, ASIC, FPGA Software Supports various interfaces Opto-semiconductor devices Hamamatsu opto-semiconductors Si photodiodes Si APD MPPC Photo IC Image sensors Flat panel sensors PSD (position sensitive detectors) Infrared detectors Visible light sensors Color sensors LED Optical communication devices Mini-spectrometers Opto-semiconductor modules

4 Frank Boston-Fotolia.com Nmedia-Fotolia.com Zoe-Fotolia.com Applications of Hamamatsu opto-semiconductors Hamamatsu opto-semiconductors have been used in wide-ranging fields including communications, industry and general electronics as well as medical and scientific applications. Applications of Hamamatsu opto-semiconductors LCD color adjustment RGB color sensors detect the brightness and color temperature of room light and adjusts the display colors. RGB color sensors Automotive applications Our automotive devices are widely used in vehicles. (In-vehicle LAN, ambient light level detection, day/night detection, windshield rain sensors, laser radars, multi-function jog dials, pedestrian protection systems, glareproof mirrors, etc.) Automotive devices Optical communications We provide light transmitter and receiver devices for optical fiber communications and FSO (free space optics). Optical communication related devices Rangefinders Si APD and PIN photodiodes are used in surveying instruments for distance measurement. Si APD Infrared LED and Si PIN photodiode arrays are used to configure encoders built into robots for position control. Infrared LED Industrial robots Si PIN photodiode arrays Semiconductor manufacturing equipment Back-thinned TDI-CCD image sensors are used for wafer defect inspections. Back-thinned TDI-CCD image sensors Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)] CMS project (by courtesy of CERN) X-ray non-destructive inspection Our Si photodiodes are widely used as detectors in X-ray baggage inspection systems. Si photodiode arrays Dental X-ray imaging CMOS area image sensors are used in imaging equipment for dental diagnosis. CMOS area image sensors Flat panel sensor Astronomical observation The world s highest sensitivity CCDs manufactured by Hamamatsu are installed in the Suprime Cam/Subaru Prime Focus Camera of the Subaru Telescope at the summit of Mauna Kea, Hawaii. CCD area image sensor Photon counting The MPPC is used in diverse applications for detecting extremely weak light at the photon-counting level. MPPC High energy experiments The European Organization for Nuclear Research (CERN) in Switzerland is conducting a project involving the Large Hadron Collider (LHC). The Si strip detector by HAMAMATSU is being used as the particle track detector in the collider, and is detecting particle tracks with a precision on the order of several tens of µm. Si strip detector Si APD 3 4 5

5 Opto-semiconductor selection guide [Product name] [Applications] High energy particle Si strip detector High energy physics, nuclear medicine, industrial measurement X-ray Si photodiode for X-ray Baggage inspection, non-destructive inspection, medical use Si photodiode for UV light Pollution analysis, spectroscopy, medical use, UV detection, colorimetry UV Schottky type GaAsP photodiode Pollution analysis, spectroscopy, colorimetry, UV detection Schottky type GaP photodiode UV detection Si photodiode with compensation filter Illuminometry, copiers, color sensors Point sensor Visible Diffusion type GaAsP photodiode Illuminance sensor Color sensor Illuminometry, flame eyes (monitors) Energy-saving sensors for TV and the like, light dimmers for liquid crystal panels, backlight dimmers for cell phones, light level measurements Display color adjustment, color detection Si photodiode Optical communication devices, information equipment, automatic control systems, general electronics, car electronics, photometric equipment, medical equipment, high energy physics Near IR Si APD (avalanche photodiode) Optical communication devices, information equipment, automatic control systems, general electronics, car electronics, photometric equipment, medical equipment, high energy physics Photosensor Photo IC Optical switches, office automation equipment, rotary encoders, optical fiber communications IR-enhanced Si photodiode/si APD YAG laser monitoring, near infrared detection InGaAs PIN photodiode Optical communication device, IR laser monitoring, radiation thermometry, industrial measurement IR InSb photoconductive detector, InSb/InAs/InAsSb photovoltaic detector Photon drag detector IR laser detection, spectroscopy, radiation thermometry, gas analysis, FTIR, thermal imaging CO2 laser detection Thermopile detector Radiation thermometry, gas analysis, flame eyes Photon counter MPPC Area image sensor Medical equipment, nuclear medicine, high energy physics, radiation measurement Fluorescence spectroscopy, Raman spectroscopy, scientific measurement, X-ray imaging, near infrared imaging 2D X-ray image sensor Radiography, non-destructive inspection Image sensor Flat panel sensor Radiography, X-ray diffractometers, non-destructive inspection 1D Linear image sensor Photodiode array Multichannel spectroscopy, spectrum analysis, optical measurement Multichannel spectroscopy, color analysis, spectrum analysis, position detection Position sensor Segmented type Non-segmented type Multi-element photodiode PSD (position sensitive detector) Position detection Rangefinding, displacement sensing, laser optics, automatic control systems, high energy physics Light emitter Visible Red LED Optical switches, optical fiber communications Near IR Near infrared LED Optical switches, light sources for measurement devices, optical communication devices, automatic control systems, rotary encoding Mid IR Mid infrared LED Gas detection 6 7

6 Module product Mini-spectrometer, photosensor amplifier, APD module, etc. Selection guide by wavelength Spectral range Wavelength UV Visible Near IR Middle IR Far IR (μm) Si GaAsP GaP Photosensor InGaAs InAs InAsSb InSb Thermopile detector Light emitter Red LED Near infrared LED Near infrared LED Mid infrared LED 8

7 Manufacturing process of opto-semiconductors Design Design for new products Design for custom products Epitaxial growth process [Typical compound semiconductor fabrication process] [Example of custom orders] Electrical and optical characteristics Active area Number of elements Package Reliability Thin-film crystal growth under ultra-high vacuum in MBE equipment Thin-film crystal growth with MOCVD equipment Wafer process [Typical process of Si photodiode fabrication] Oxidation Photolithography Etching Photomask Resist SiO2 Si SiO2 Resist Si SiO2 Si Si wafer (before process) Thin films are formed on wafers by oxidation or CVD process. Device patterns are formed by photolithographic technique. Selective etching is performed on the thin film on wafers. Manufacturing technologies Semiconductor process technologies Hamamatsu has been manufacturing a wide range of opto-semiconductors using our unique wafer process technologies. PIN bipolar process Fabricates high-speed photodiodes by integrating a PIN photodiode and high-speed signal processing circuits onto a single chip. CMOS process The integration of circuit functions in photodetectors helps to achieve high performance, multifunctionality, and cost reduction in systems. Product examples produced using our CMOS process Back-thinned CCD process Back-thinned CCD area image sensors have a very thin photosensitive layer for high sensitivity yet low dark current. Compound process Utilizing compound semiconductor process technologies that include MBE, MOCVD, and dry etching techniques optimized for precision processing, we have been developing high-performance devices for optical communications, chemical analysis, and measurement. Product examples produced using our compound semiconductor process Digital color sensors CMOS image sensors InGaAs APD InGaAs linear image sensors 9

8 Main factory (Ichino) Ion implantation Ion Metallization Metal Wafer inspection Metal Si SiO2 Diffusion layer Si SiO2 Diffusion layer Si SiO2 Diffusion layer To assembly process Doping impurities are injected into wafers. Metal pattern is formed. Devices on the wafer are inspected electrically and optically. MEMS technologies Hamamatsu is developing highly functional opto-semiconductors using a wide range of MEMS technologies. Etching Etching is a basic semiconductor process technology. MEMS technology utilizes anisotropic etching and sacrificial layer etching as well as conventional etching techniques to provide versatile functions impossible to achieve by conventional optosemiconductors. Nanoimprint Nanoimprint is a technology for fabricating fine structures at a high throughput. Light curing resin is applied to a substrate upon which a master substrate with a fine structure is then pressed. Light is then irradiated to transfer the nanoscale structure to the resin. 3D mount technology 3D mount technology can be broadly grouped into electrode technology for fabricating structures with 3D electrical connections and bonding technology for making wafer level packages. Electrode technology is essential for achieving more sophisticated functions and smaller size opto-semiconductors. Electrode technology involves techniques for forming Si through-hole electrodes to extract electrodes from the backside of devices and flip-chip bonding to make electrical connections between different materials. Bonding technology includes anodic bonding and room-temperature bonding that need no adhesives and that apply direct sealing on devices to achieve ultra-small packages. V groove formed by anisotropic etching Actuators formed by sacrificial layer etching (bulk micromaching) Nanoimprint 20 μm pitch indium bump electrodes 10

9 Assembly process [Typical process] Die bonding Metal package Dicing Blade dicing Chips are bonded to metal bases. Die bonding Ceramic package Wafers are cut by a spinning blade. Stealth dicing Chips are bonded to ceramic bases. Die bonding Plastic package A laser cuts a wafer by irradiating the interior of the wafer. Chips are bonded to lead frames. Bump forming Dicing Chip size package Blade dicing or Stealth dicing Gold bumps or solder bumps are formed on wafers. Manufacturing technologies Mounting/packaging technologies Hamamatsu offers a variety of package types to meet diverse market needs. For example, metal packages are widely used in applications requiring high reliability. Ceramic packages are used in general applications. Plastic packages are suitable for high-volume applications where lower cost is essential. Special packages include rectangular metal packages designed for use with thermoelectrically-cooled CCD area image sensors. Many different types of surface mount packages are also available. COB (chip on board) devices and thin plastic package devices are ideal especially for applications where small, thin devices are needed. What's more, photodiode/scintillator combination devices are available that detect X-rays or radiation by converting them into visible light. Mitsue factory (Assembly factory) Shingai factory (Assembly factory) 11 TO-CAN metal Rectangular metal Ceramic Surface mount type ceramic

10 Wire-bonding Cap sealing Test Electrical & optical test Metal package test equipment Chips are connected to metal bases using gold wires. Metal caps are welded to metal bases. Wire-bonding Resin encapsulation Plastic package test equipment Chips are connected to ceramic bases using gold wires. Wire-bonding Resin is injected into ceramic bases. Resin molding Electrical & optical characteristics are tested. Appearance inspection Appearance inspection system Chips are connected to lead frames using gold wires. Resin is molded along lead frames and chips. Flip chip bonding Underfill filling X-ray & appearance inspection system Chips with bumps are bonded to substrates by being flipped (inverted). The space between the substrate and chip is filled in with resin. The appearances of finished products are inspected. Glass epoxy board Plastic Chip size package Long and narrow type With scintillator With flexible cable Flip chip bonding 12

11 [Si photodiodes] S i P H O T O D I O D E S Product lineup for wide-ranging applications Si photodiodes are used in various applications covering optical fiber communications, copiers, analytical instruments and baggage inspection, and are available in various packages including metal, ceramic and plastic packages, as well as surface mount packages. 1 Si photodiode 2 Si PIN photodiode 3 Multi-element type Si photodiode 4 Si photodiode with preamp 5 TE-cooled type Si photodiode 6 Si photodiode for X-ray Features Excellent linearity with respect to incident light Low noise Wide spectral response range Mechanically rugged Compact and lightweight Long life Spectral response (typical example) S1226/S1336-8BQ, S1227/S BR Major applications Analytical instrument General photometry Baggage inspection Optical fiber communications S , S3759, S S1336-8BQ (For UV to NIR) QE=100% (Typ. Ta=25 ºC) QE=100% S3759 (for YAG laser) (Typ. Ta=25 ºC) Photosensitivity (A/W) S BR (For UV to NIR) S1226-8BQ (IR sensitivity suppressed) Photosensitivity (A/W) S (high violet sensitivity) S9219 (visible-sensitive compensated) S BR (IR sensitivity suppressed) Wavelength (nm) Wavelength (nm) KSPDB0300EC KSPDB0301EC 13

12 Product lineup 1 Si photodiode Product name 2 Si PIN photodiode 3 Multi-element type Si photodiode 4 Si photodiode with preamp 5 TE-cooled type Si photodiode 6 Si photodiode for X-ray S i P H O T O D I O D E S Product examples For UV to near IR range For visible to near IR range For visible range RGB color sensor For VUV (vacuum ultraviolet) detection For monochromatic light detection For electron beam detection Cutoff frequency: 1 GHz or more Cutoff frequency: 500 MHz to less than 1 GHz Cutoff frequency: 100 MHz to less than 500 MHz Cutoff frequency: 10 MHz to less than 100 MHz IR-enhanced type For YAG laser detection Segmented type photodiode One-dimensional, two-dimensional photodiode array For analytical instrument and precision measurement With scintillator Large photosensitive area type Photodiode module To make our photodiodes easier to use, we offer a variety of modules. Product name Photodiode module Photosenser amplifier Features These modules are high-precision photodetectors integrating a Si photodiode or InGaAs photodiode with a current-to-voltage conversion amplifier into a compact case. Dedicated controller is also provided (sold separately). Photosensor amplifiers are current-to-voltage conversion amplifiers used to amplify very slight photocurrent from a photodiode with very low noise. T O P I C Si PIN photodiodes with enhanced near-infrared sensitivity made by MEMS technology IR-enhanced Si PIN photodiode These Si PIN photodiodes offer high sensitivity in the near infrared region via MEMS technology. They have both high-speed response and high sensitivity in the near infrared region which have been difficult to achieve up to now by conventional methods. Spectral response example Photosensitivity (A/W) QE=100% Previous type IR-enhanced Si PIN photodiode S11499 series (Typ. Ta=25 C) 1200 Wavelength (nm) KPINB0374EC 14

13 [Si APD] S i A V A L A N C H E P H O T O D I O D E S High-speed, high-sensitivity photodiodes with an internal gain mechanism APD (avalanche photodiodes) are high-speed, high-sensitivity photodiodes that internally amplify photocurrent by the application of a reverse voltage. Delivers a higher S/N than PIN photodiodes and is widely used in optical rangefinders, FSO (free space optics), scintillation detectors, etc. 1 Short wavelength type 2 Near infrared type Features Excellent linearity with respect to incident light Low noise Wide spectral response range Mechanically rugged Compact and lightweight Long life Major applications Low-light-level detection Analytical instrument FSO Optical rangefinder Optical fiber communications Laser radar YAG laser detection Spectral response Cutoff frequency vs. recommended wavelength Photosensitivity (A/W) (Typ. Ta=25 C, M=50, =650 nm) IR-enhanced type (1000 nm band/high sensitivity) Near infrared type (low bias operation) Near infrared type (low temperature coefficient) Short wavelength type (low bias operation) Short wavelength type (low terminal capacitance) Cutoff frequency (MHz) High Short wavelength type (Low terminal capacitance) Short wavelength type (Low-bias operation) (photosensitive area size compared at 0.5 mm) Near infrared type Low-bias operation ( Low temperature ) coefficient Near infrared type 900 nm band, low terminal capacitance ) ( Near infrared type (1000 nm band/high sensitivity) Near infrared type (900 nm band, low terminal capacitance) Low Wavelength (nm) Wavelength (nm) 15 KAPDB0096EG KAPDB0196ED

14 Product lineup S i A V A L A N C H E P H O T O D I O D E S Type Recommended wavelength Package Features Low-bias operation 200 to 650 nm Metal 1 Short wavelength type Low terminal capacitance 320 to 650 nm Metal, ceramic Enhanced sensitivity in the UV to visible range Low-bias operation 600 to 800 nm Metal High sensitivity in near infrared region and low bias voltage operation Surface mount type Low-cost, miniature and thin package 2 Near infrared type Low temperature coefficient 600 to 800 nm Metal Easy voltage adjustment due to low temperature coefficient of bias voltage 900 nm band, low terminal capacitance 1000 nm band/ high sensitivity 800 to 1000 nm Metal Enhanced sensitivity in 900 nm band 900 to 1150 nm Metal Enhanced sensitivity in 1000 nm band APD modules These modules consist of an APD, low-noise amplifier, and bias power supply integrated in a compact package. Type Standard type High-sensitivity type High-stability type High-speed type TE-cooled type Features Contains a near infrared or short wavelength type APD. FC/SMA fiber adapters are also provided. High gain type for detection under low illuminance Digital temperature-compensation, high-stability APD module Operates over a wide range of frequencies (up to 1 GHz) High-sensitivity type for low-light-level detection. Greatly improved stability through thermoelectric cooling. Sensitivity vs. response speed (APD modules) Sensitivity (V/W) C DC to 100 khz V/W C DC to 10 MHz to V/W C12703 series DC to 10 MHz V/W C khz to 1 GHz V/W C12702 series 4 types available for different photosensitive areas and wavelengths 4 khz to 100 MHz V/W DC k 10 k 100 k 1 M 10 M 100 M 1 G Response speed (Hz) KACCB0355EA 16

15 [MPPC ] M U L T I - P I X E L P H O T O N C O U N T E R S Compact opto-semiconductors with excellent photon-counting capability The MPPC (multi-pixel photon counter) is a new type of photon-counting device made up of multiple APD (avalanche photodiode) pixels operated in Geiger mode. The MPPC is essentially an opto-semiconductor device with excellent photon-counting capability and which also possesses great advantages such as low-voltage operation and insensitivity to magnetic fields. 3 MPPC module 1 For precision measurment (single type) 2 MPPC array Features Excellent photon-counting capability High gain: 10 5 to 10 6 Low-bias (below 100 V) operation Insensitive to magnetic fields Simple readout-circuit operation Low afterpulse (compared to our previous products) Excellent time resolution Room temperature operation Major applications Fluorescence analysis, fluorescence lifetime measurement Biological flow cytometry Confocal microscopes Biochemical sensors Bioluminescence analysis Single molecule detection PET Scintillation light detection What is the MPPC? The MPPC is a kind of so-called Si-PM (silicon photomultiplier) device. It is a photon-counting device consisting of multiple APD pixels operating in Geiger mode. Each APD pixel of the MPPC outputs a pulse signal when it detects one photon. The signal output from the MPPC is the total sum of the outputs from all APD pixels. The MPPC offers the high performance needed in photon counting and is used in diverse applications for detecting- extremely weak light at the photon-counting level. R 17

16 Product lineup Type M U L T I - P I X E L P H O T O N C O U N T E R S Features 1 For precision measurement (single type) These are low-noise MPPCs for precision photometry. Low crosstalk and low afterpulses in addition to high photon detection efficiency achieve excellent S/N. They are suitable for precision measurement, such as flow cytometry, DNA sequencer, laser microscope, and fluorescence measurement, that requires low noise characteristics. They are available in two types: ceramic package and surface mount. 2 MPPC array These are MPPCs with several MPPC chips arranged in an array. The CSP (Chip Size Package) type MPPCs can be tiled together to fabricate large-area devices and can be coupled efficiently to scintillators or the like. 3 MPPC module MPPC modules are optical measurement modules with built-in MPPC. They can measure light over a wide range (10 orders of magnitude) from the photon counting region to nw (nanowatt) region. They are available in two types: non-cooled modules, which are equipped with a temperature compensation function for stable measurement, and cooled modules, which feature low dark count. Measurable light level ranges of MPPC modules (product examples) (λ=450 nm) C Non-cooled type/10 μm pitch Analog output type C13365 series Non-cooled type/50 μm pitch C13366 series (GA type) TE-cooled type/50 μm pitch Digital output type C13366 series (GD type) TE-cooled type/50 μm pitch C TE-cooled type/single pixel (fiber coupling type) Number of incident photons (cps) Incident light level (W) KACCC0678EG 18

17 [Photo IC] P H O T O I C Highly functional devices integrating photodiodes with signal processing circuits The photo IC is a light receiver element with various functions. It integrates a photosensitive element and a signal processing circuit into one package. 1 Schmitt trigger circuit photo IC 2 Light modulation photo IC 3 Illuminance sensor 4 Color sensor 5 Photo IC for optical link 6 Photo IC for encoder, Encoder module 7 Photo IC for optical switch 8 Photo IC for laser beam synchronous detection 9 Phototransistor Features Small and lightweight Highly resistant to noise from electromagnetic induction High reliability Major applications Paper detection in office machines (copier, fax machines, etc.) Optical switch Light dimmers for liquid crystal panels and large-screen TV, etc. Color adjustment for display Plastic optical fiber communications Encoder HAMAMATSU photo IC technology Offers custom designs for producing optical sensors to meet specific applications. Merges IC design technology, CMOS circuit technology, optical device technology, and packaging technology. Allows the fabrication of subminiature devices that integrate multiple functions. Photosensor Provides spectral response characteristics, etc. optimized for specific needs. Responds to sophisticated needs. Delivers high linearity, low noise, and wide dynamic range. Minimizes digital noise. Analog signal processing circuit A/D converter Digital signal processing Interface circuit Simplifies external Makes it easy to use photo IC. input/output terminals. Photo IC External circuit Minimum hardware Minimum software Simplified external circuit reduces the total cost. 19

18 Product lineup P H O T O I C Type Output Features 1 Schmitt trigger circuit photo IC Digital Photo IC integrates a photodiode, amplifier, Schmitt trigger circuit and output transistor, etc. into one chip Photo IC for general use 2 Light modulation photo IC 3 Illuminance sensor Digital Analog/Digital Employs synchronous optical detection to ensure stable output even under fluctuating background light Has spectral response characteristics close to human visual sensitivity 4 Color sensor Digital Has sensitivity to red, green and blue light 5 Photo IC for optical link (POF) Digital (receiver photo IC) Photo IC transmitters and receivers for plastic optical fiber communications Photo IC for special use 6 Photo IC for encoder, Encoder module Digital Uses a 4-element photodiode that can be used to easily configure an encoder with 2-phase digital output 7 Photo IC for optical switch Digital Has functions needed for industrial optical switches 8 Photo IC for laser beam synchronous detection Digital For detecting laser beam print-start timing in laser printers and digital copiers 9 Phototransistor Analog Amplifies the photocurrent generated by input light. Allows a larger current to be drawn even from a small active area when compared to photodiodes. Application examples Hamamatsu photo ICs are widely used for many different needs. Station ticket gate: passenger sensing Light modulation photo IC Air conditioner: light/dark sensing Illuminance sensor (Photo IC diode) Clocks: light/dark sensing Illuminance sensor (Photo IC diode) Factories Safety devices Light modulation photo IC, Photo IC for optical switch Detection of product passage Light modulation photo IC, Photo IC for optical switch Digital copiers / Multifunctional digital office machines Mirror and lens positioning Photo IC for encoder/encoder module Sorter leftover paper detection Light modulation photo IC Color toner contrast detection Digital color sensor Display backlight brightness adjustment Illuminance sensor (Photo IC diode) Paper size detection Light modulation photo IC Signal transmission Transmitter/Receiver photo IC for optical link Laser origin point detection for writing on print drum Photo IC for laser beam synchronous detection Remaining paper amount detection Light modulation photo IC Vending machine: light/dark sensing Illuminance sensor (Photo IC diode) Boiler: flame monitor Illuminance sensor (Photo IC diode) Auto lighting equipment: light/dark sensing Illuminance sensor (Photo IC diode) Auto hand washer: hand sensing Light modulation photo IC Large screen TV: light/dark sensing Illuminance sensor (Photo IC diode) 20

19 [Image sensors] I M A G E S E N S O R S A wide lineup of image sensors suitable for spectroscopy and measurement applications Hamamatsu provides various types of image sensors that cover a wide energy level and spectral response range from near infrared (NIR) at 2.6 μm through visible, ultraviolet, vacuum ultraviolet (VUV) down to soft X-rays and hard X-rays at several hundred kev. 1 Front-illuminated CCD area/linear image sensor 2 Back-thinned CCD area/linear image sensor 4 CMOS linear/area image sensor 5 Distance linear/ area image sensor 6 InGaAs linear/area image sensor 7 Photodiode array with amplifier 8 X-ray image sensor Features A wide lineup covering different wavelengths Major applications Spectrophotometry Scientific measurement NIR spectrometry X-ray imaging Obstacle detection Security Example of detectable energy level and spectral response range 1240 Wavelength [nm] = Photon energy [ev] NMOS linear image sensor (windowless type) CMOS linear image sensor NMOS linear image sensor InGaAs linear image sensor (long wavelength type) InGaAs linear/area image sensor Distance image sensor CMOS area image sensor Back-thinned CCD CCD for X-ray imaging Front-illuminated CCD (windowless type) Back-thinned CCD (windowless type) Front-illuminated CCD Flat panel sensor 1 MeV 100 kev 10 kev 1 kev 100 ev 10 ev 1 ev 0.1 ev Photon energy 0.01 nm 0.1 nm 1 nm 10 nm 100 nm 1 μm 10 μm Wavelength 21 KMPDC0105EH

20 Product lineup I M A G E S E N S O R S Product name Features Lineup 1 Front-illuminated CCD area/linear image sensor Image sensors with low dark current and low noise. For spectrophotometry For scientific measurement 2 Back-thinned CCD area/linear image sensor Image sensors delivering high quantum efficiency from visible to VUV region For spectrophotometry For scientific measurement TDI-CCD area image sensor Fully-depleted back-illuminated CCD area image sensor 3 NMOS linear image sensor Image sensors with high UV-sensitivity and excellent output linearity, making them suitable for precision photometry Current output type (standard type) Current output type (infrared-enhanced type) Voltage output type 4 CMOS linear/area image sensor Image sensors integrated with signal processing circuits, making them suitable for applications where low power consumption and downsizing of the detector unit are essential Variable integration time type High-speed readout type High sensitivity type Digital output type SXGA/VGA format type 5 Distance linear/area image sensor Image sensors designed to measure the distance to an object by TOF method. Distance linear image sensor Distance area image sensor 6 InGaAs linear/area image sensor Image sensors for near infrared region. Built-in CMOS IC allows easy operation. For NIR spectrometry For DWDM monitor For NIR image detection 7 Photodiode array with amplifier Sensors combining a Si photodiode array and a signal processing IC. A long, narrow image sensor can also be configured by arranging multiple arrays in a row. Long and narrow area type For non-destructive inspection 8 X-ray image sensor Image sensors and photodiode arrays delivering high quality X-ray images by coupling FOS (FOP coated with X-ray scintillator) or phosphor sheet. CCD/CMOS area image sensors for dental imaging TDI-CCD area image sensors Photodiode arrays with amplifier for non-destructive inspection Spectral response (typical example) CCD area image sensor (without window) Quantum efficiency (%) Back-thinned type (UV high sensitivity) Front-illuminated type Front-illuminated type (NIR high sensitivity) (Typ. Ta=25 C) Back-thinned type Photosensitivity (A/W) Td=25 C Td=-10 C G W Td=-20 C G W G9201 G9204/ G9211 G9214/ G9494 series G11135 series G11620 series G11608 series InGaAs linear image sensor (Typ. Ta=25 C) G W G W Wavelength (nm) KMPDB0276EB Wavelength (μm) KMIRB0068ED 22

21 [Flat panel sensors] F L A T P A N E L S E N S O R S Capturing high-resolution, high-quality X-ray images in real-time Flat panel sensors are digital X-ray image sensors capable of acquiring high-resolution, high-quality X-ray images in realtime. A flat panel sensor is made up of a sensor board and a control board, designed for a thin, compact configuration. 1 For radiography (rotational type) 2 For radiography (biochemical imaging) 3 For radiography (X-ray diffraction) Major applications CT imaging/panoramic imaging, biochemical imaging, etc. Radiography X-ray diffraction Non-destructive inspection Product lineup Type Pixel size (μm) Active area [(H) (V) cm] Frame rate (frames/s) Features 1 For radiography (rotational type) to to 265 High-speed, high-sensitivity type suitable for CT imaging and panoramic imaging to 600 Supplied without case for assembly into equipment to For radiography (biochemical imaging) to to 4 Suitable for imaging of low-energy X-rays and compatible with X-ray sources with 17 kev Mo target 3 For radiography (X-ray diffraction) to Active pixel sensor for low-noise readout and compatible with X-ray below 18 kev 23

22 [PSD (position sensitive detectors)] POSITION SENSITIVE DETECTORS Light spot position sensors used for distance and angle measurements A PSD is a non-discrete type position photosensor that makes use of photodiode surface resistance. It provides position data as a continuous electrical signal and offers high position resolution, high-speed response, and high reliability. 1 One-dimensional PSD 2 Two-dimensional PSD Features Excellent position resolution Wide spectral response range High-speed response Simultaneously detects light intensity and center-of-gravity position of a spot light High reliability Major applications Position and angle sensing Distortion and vibration measurements Optical rangefinders Optical switches Precise position measurements such as laser displacement meters Product lineup Type Lineup Visible light cut-off type suitable for detection of near infrared light High IR-sensitivity 1 One-dimensional PSD Suitable for detection of microscopic spot light such as from a laser diode Long, narrow type with active area length of 30 mm or more 2 Two-dimensional PSD High-speed response, low dark current, superior position-detection characteristic 24

23 [Infrared detectors] I N F R A R E D D E T E C T O R S Product lineup to meet various needs for spectral response range Infrared detectors are utilized in a wide range of fields such as measurement, chemical analysis, industry, agriculture, medicine, physics and chemistry, communications, and aerospace applications. 1 InGaAs PIN photodiode 2 InSb photoconductive detector/photovoltaic detector, InAsSb photovoltaic detector, InAs photovoltaic detector 3 Thermopile detector 4 Two-color detector 5 Photon drag detector Spectral response (typical example) D* (cm Hz 1/2 /W) Si (25 C) Short wavelength enhanced type InGaAs (25 C) Long wavelength type InGaAs (-196 C) InAs (-196 C) Long wavelength type InGaAs (25 C) InSb (-196 C) InAsSb (-196 C) InAsSb for 8 µm band (-30 C) Thermopile InSb (-60 C) Photovoltaic detectors Photoconductive detectors Si thermal detectors InAsSb for 5 µm band (-30 C) InAsSb for 10 µm band (-30 C) Wavelength (μm) KIRDB0259EI 25

24 Product lineup I N F R A R E D D E T E C T O R S Product name Spectral response range Features Major application 1 InGaAs PIN photodiode 0.5 to 1.7 μm 0.9 to 1.7 μm 0.9 to 1.9 μm 0.9 to 2.1 μm 0.9 to 2.6 μm 2 InSb photoconductive detector 1 to 6.7 μm 2 InSb photovoltaic detector 1 to 5.5 μm 2 InAsSb photovoltaic detector 1 to 11 μm 2 InAs photovoltaic detector 1 to 3.8 μm 3 Thermopile detector 1 to 25 μm 4 Two-color detector Si + InGaAs Si + InAsSb InGaAs + InGaAs 0.32 to 2.55 μm 0.32 to 5.3 μm 0.9 to 2.55 μm 5 Photon drag detector 10 μm High-speed response Various types of active areas, arrays and packages available TE-cooled type available Detects wavelengths up to around 6.7 μm, with high sensitivity over long periods due to thermoelectric cooling Suitable for CO2 and SOx (SO, SO2, SO3) gas analysis due to high sensitivity in the 3 to 5 μm band Covers a spectral response range close to PbSe but offers higher response speed Infrared detector in the 5 μm, 8 μm, or 10 μm spectral band, with high sensitivity and high reliability Covers a spectral response range close to PbS but offers higher response speed Sensors that generate thermoelectromotive force in proportion to the energy level of incident light Wide spectral response range from UV to IR Two-color detectors incorporate an infraredtransmitting Si photodiode mounted over an InGaAs PIN photodiode or an InAsSb photovoltaic detector A sensor made of two vertically stacked InGaAs PIN photodiodes with different spectral ranges High-speed detectors with high sensitivity in 10 μm band (for CO2 laser detection) Room temperature operation with highspeed response Optical fiber communications Optical power meter Gas analyzer Water content analyzer NIR (near infrared) photometry Environment measurements (gas analysis, etc.) Radiation thermometer (5 μm band) FTIR IR laser detection Radiation thermometer Thermal imaging Remote sensing Gas analyzer FTIR Spectrophotometers Gas analyzer Infrared radiation measurement Infrared spectrophotometry FTIR Gas analysis CO2 concentration measurement Spectrophotometers Laser monitors Flame monitors Radiation thermometer CO2 laser detection Infrared detection T O P I C Ultra-compact near infrared spectrum sensor that integrates MEMS tunable filter and photosensor The MEMS-FPI spectrum sensor is a ultracompact sensor that houses a MEMS-FPI (Fabry-Perot Interferometer) tunable filter that can vary its transmission wavelength depending on the applied voltage and InGaAs PIN photodiode in a single package. The spectral response range is 1550 to 1850 nm. It is suitable for installation in compact devices for identifying materials in plastic and solutions and other similar applications. Application example: spectral transmittance of plastic materials Transmittance (%)* (Light source: tungsten halogen lamp) 100 PVC Acryl 80 PET Wavelength (nm) *Trancemittance = Transmission light signal/reference light signal 100 [%] KMIRB0068ED 26

25 [Visible light sensors] V I S I B L E L I G H T S E N S O R S Spectral response close to that of the human eye Visible light sensors are broadly used as illuminance sensors. 1 Illuminance sensor 2 Si photodiode 3 GaAsP photodiode Major applications Spectral response example (photo IC diode) Exposure meter, illuminometer 1.0 (Typ. Ta=25 C, VR=5 V) Cellular phone backlight dimmer Energy-saving sensor for large-screen TV, etc. Light dimmers for liquid crystal panels Automatic lighting system Various types of light level measurement Relative sensitivity Human eye sensitivity Wavelength (nm) KPICB0121EA Product lineup Type 1 Illuminance sensor 2 Si photodiode 3 GaAsP photodiode Features Photo ICs with spectral response characteristics close to human visual sensitivity Si photodiode with a filter that corrects the spectral range to have sensitivity only in the visible range Compound semiconductor photosensor that delivers spectral sensitivity close to the human eye without using any filters 27

26 [Color sensors] C O L O R S E N S O R S Small sensor for LCD monitoring and simple color detection Hamamatsu provides single-color sensors that are sensitive to red, green and blue light, as well as RGB color sensors. 1 Si photodiode 2 RGB color photodiode 3 Digital color sensor 4 Color sensor module Major applications Spectral response example (RGB color photodiode) White balance adjustment Color control, color identification Portable or mobile equipment RGB-LCD backlight monitors Light source color temperature detection Various types of color detection Photosensitivity (A/W) Blue Green (Typ. Ta=25 C) Red Wavelength (nm) KSPDB0246EA Product lineup Type 1 Si photodiode 2 RGB color photodiode 3 Digital color sensor 4 Color sensor module Features These are color sensors designed to respectively detect monochromatic colors of blue ( p=460 nm), green ( p=540 nm) and red ( p=660 nm). These are color sensors molded into a plastic package having a 3-channel (RGB) photodiode sensitive to the blue, green and red regions of the spectrum. These are color sensors sensitive to red, green, and blue light. Detected signals are output serially as digital data. These modules are used for monitoring of LCD backlight colors and for simple color detection. 28

27 [LED] L I G H T E M I T T I N G D I O D E S Infrared LED and red LED with high output Compared to laser diodes, LEDs offer advantages such as lower cost and longer life. Hamamatsu has developed and produced various types of LEDs that enhance emission efficiency via a high output power LED chip mounted on a reflective package base, which makes the light emitted from the chip edges reflect towards the front. 1 For optical switch 2 For optical encoder 3 For gas detection 4 For moisture measurement 5 For infrared lighting 6 For FSO (free space optics) 7 For optical link Features High output Available in various types of packages Major applications Optical switch Optical rangefinder Encoder Optical fiber communications Light source for moisture meter FSO Product lineup Type Features Reflector type High output power 1 For optical switch Near infrared Ball-lens type Peripheral electrode type Narrow directivity, uniform emission pattern Shadow of wire does not appear in emission pattern. Red Reflector type High output power 2 For optical encoder Optimized lens shape allows these LEDs to emit highly collimated beams. High reliability is obtained since these LEDs do not use a current confinement structure chip. 3 For gas detection High output LED with peak emission wavelength in the mid infrared region 4 For moisture measurement Long-wavelength LED with peak emission wavelength at 1.45 μm 5 For infrared lighting 6 For FSO Infrared camera lighting LED. Types with peak emission wavelength at 850 to 1550 nm are available. High-speed, high output power LED. Transmitter/receiver module for VICS (Vehicle Information and Communication System) is also available. 7 For optical link These LEDs are suitable for 50 Mbps or 125 Mbps optical link. 29

28 [Optical communication devices] OPTICAL COMMUNICATION DEVICES High-speed devices for optical fiber communications and FSO (free space optics) Hamamatsu provides high-quality receiver/transmitter devices designed for long-range, high-speed communications and short-range, low-speed communications, as well as FSO. 1 For high-speed optical fiber communications 2 For optical data link 3 For FSO 4 For optical power and wavelength monitor Product lineup 1 Type For high-speed optical fiber communications Features High-speed photodiodes available in a variety of packages (ROSA, metal, receptacle, pigtail). 2 For optical data link These are light receivers and emitters suitable for medium to low speed optical links. 3 For FSO 4 For optical power and wavelength monitor Hamamatsu provides large area photodiodes and high-power LEDs, as well as a light emitter/receiver module designed for vehicle-mounted VICS (Vehicle Information and Communication System). These devices are used to monitor laser diodes or DWDM. 30

29 [Mini-spectrometers] M I N I - S P E C T R O M E T E R S Integrating an optical system, image sensor and circuit Hamamatsu offers a full line of mini-spectrometers that are integrated with an optical system, image sensor, and circuit by fabricating the grating section using micromachining techniques. 1 TG series 2 TM series 3 TF series 4 RC series 5 MS series Features High throughput due to transmission grating made of quartz (TG/ TM series) Highly accurate optical characteristics No external power supply required: Uses USB bus power (excluding CCD type, cooled type, and type for installation in devices) Low noise (cooled type) Compact design for easy assembly Contains a wavelength conversion factor (data supplied only with types for installation in devices) Major applications Evaluation of light source characteristics Taste analyzers Water content measurement Film thickness measurement Semiconductor process control Low-light-level measurement such as fluorescence measurement Installation into measurement equipment T O P I C Ultra-compact (finger-tip size) spectrometer head integrating MEMS and image sensor technologies Micro-spectrometers are ultra-compact spectrometer heads developed based on our MEMS and image sensor technologies. The adoption of a newly designed optical system has achieved a remarkably small size, less than half the volume of the previous mini-spectrometer MS series (C10988MA-01). This product is suitable for integration into a variety of devices, such as integration into printers and hand-held color monitoring devices that require color management. It is also suitable for applications that collaborate with portable devices, such as smartphones and tablets. Micro-spectrometer 31

30 Product lineup M I N I - S P E C T R O M E T E R S Series 1 TG series Type High sensitivity C9404CA High resolution C9404CAH Spectral response range 200 to 400 nm IR-enhanced C9405CB 500 to 1100 nm High resolution C11713CA High resolution C11714CB Near IR C11482GA Near IR (cooled) C9913GC 500 to 600 nm 790 to 920 nm 900 to 1700 nm Spectral resolution Max. 3 nm 1 nm* 5 nm (550 to 900 nm) 0.3 nm* 7 nm 7 nm Near IR (cooled) C9914GB 1100 to 2200 nm 8 nm Near IR (cooled) C11118GA 900 to 2550 nm 20 nm Internal image sensor Back-thinned type CCD image sensor IR-enhanced back-thinned CCD image sensor Back-thinned type CCD image sensor IR-enhanced back-thinned CCD image sensor InGaAs linear image sensor 2 TM series 3 TF series High sensitivity C10082CA High resolution C10082CAH Wide dynamic range C10082MD High sensitivity C10083CA High resolution C10083CAH Wide dynamic range C10083MD Trigger-compatible C11697MB 200 to 800 nm 320 to 1000 nm 6 nm 1 nm* Compact, thin C13053MA 500 to 1100 nm 3.5 nm Compact, thin C13054MA 790 to 920 nm 0.4 nm* Compact, thin C13555MA 340 to 840 nm 3 nm Back-thinned type CCD image sensor 6 nm CMOS linear image sensor 8 nm (320 to 900 nm) Back-thinned type 1 nm* CCD image sensor (320 to 900 nm) 8 nm CMOS linear image sensor 8 nm High-sensitivity CMOS linear image sensor High-sensitivity CMOS linear image sensor 4 RC series Compact C11007MA Compact (for installation in devices) C11009MA Compact C11008MA Compact (for installation in devices) C11010MA 340 to 780 nm 9 nm 640 to 1050 nm 8 nm CMOS linear image sensor IR-enhanced CMOS linear image sensor Ultra-compact (for installation in devices) C11708MA 640 to 1050 nm 20 nm 5 MS series Ultra-compact (for installation in devices) C12666MA 340 to 780 nm 15 nm Ultra-compact (for installation in devices) C12880MA 340 to 850 nm 15 nm * Typ. Connection example (transmission light measurement) CMOS linear image sensor High-sensitivity CMOS linear image sensor Light to be measured is guided into the entrance port through an optical fiber and the spectrum measured with the built-in image sensor is output through the USB port to a PC for data acquisition. There are no moving Mini-spectrometer USB cable PC parts inside the unit so stable measurements are obtained at all times. An optical fiber that guides light input from external sources allows a flexible measurement setup. Light source Optical fiber for light input Quartz cell KACCC0524EA 32

31 [Opto-semiconductor modules] OPTO-SEMICONDUCTOR MODULES Modules using opto-semiconductors / Circuits for operating opto-semiconductors Hamamatsu provides a wide variety of opto-semiconductor modules developed by our own module technology capable of extracting the maximum performance from opto-semiconductors. Custom products are also available by request. Please feel free to consult us. 2 APD module 3 Radiation detector module 1 MPPC module 4 Optics module 5 Balanced detector 8 PSD module 9 PSD signal processing circuit 10 Flame eye 12 Sunlight sensor 13 Infrared detector 14 Multichannel module with preamp detector head 15 Peripheral product for image sensor Technologies that create opto-semiconductor modules Optical technology Optimal optical design for high-performance modules Use of simulations MEMS* technology * Micro-electro-mechanical systems High-precision micromachining Helps make modular components smaller and modules more functional Optical components (filter, lens, etc.) Opto-semiconductor Housing Opto-semiconductor module configuration example Photodiode, image sensor, etc. Photosensor Amp Signal processing (analog/digital) LED LD Light emitter Driver Software technology The sample software makes swift evaluation possible. USB, RS-232C, and other types of interfaces are available. Opto-semiconductor Circuitry Interface Opto-semiconductor technology The detector, which is the heart of module, uses Hamamatsu opto-semiconductor, which have a long track record for many years in the fields of analysis, measurement, automobiles, and consumer products. Custom designs are available to achieve the features you want. Circuit technology Optimized for optical devices and applications Supports high sensitivity, low noise, high speed, and multiple channels Mounting technology Our mounting technology combines compactness, high functionality, and low cost. 33

32 Product lineup O P T O - S E M I C O N D U C T O R M O D U L E S 1 MPPC module 2 APD module Products Features Application example 3 Radiation detector module 4 Optics module 5 Balanced detector 6 Photodiode module 7 Photosensor amplifier 8 PSD module MPPC modules are photon-counting modules that contain an MPPC capable of detecting extermely low-level light. APD modules are high-speed, high-sensitivity photodetectors using an APD (avalanche photodiode). These modules incorporate a scintillator and MPPC and are designed to detect gamma-rays. Optics modules are absorbance measurement modules featuring high blocking performance (OD>4) and low noise. They are composed of Si photodiodes, beam splitters, filters, and current-to-voltage conversion circuit. These are differential amplification type photoelectric conversion modules containing two Hamamatsu photodiodes with balanced characteristics. Photodiode modules are high-precision photodetectors combining a photodiode and current-to-voltage conversion amp. Dedicated signal processing unit is also provided. These photosensor amplifiers are current-to-voltage conversion amplifiers for amplifying photocurrent with low noise. PSD modules are high-precision position-detectors combining a PSD and current-to-voltage conversion amp. Dedicated signal processing unit is also provided. Fluorescence lifetime measurement Biological flow cytometry Bioluminescence analysis Low-light-level detection Low-light-level detection Optical power meters Laser monitors Environmental monitoring and mapping Screening tasks Blood analysis device Absorbance analyzer OCT Precision photometry Light source power monitors Illuminometers, color difference meters Precision photometry Optical power meters Illuminometers Optical axis alignment Rangefinder 3D measurement 9 PSD signal processing circuit These are signal processing circuits for evaluation of PSDs. Performance evaluation of PSD 10 Flame eye The flame eye is a sensor that monitors flames in oil boilers and heating equipment. Flame detection in oil boilers and heaters 11 RGB color sensor module These modules have built-in RGB color sensor. RGB-LED backlight monitor for TFT-LCD 12 Sunlight sensor Sunlight sensors detect the light level of sunlight and ambient light. A photodiode with superb linearity relative to the light level is built in a small case with a connector. Ambient light detection Automatic lighting sensors 13 Infrared detector module with preamp These modules integrate an infrared detector and a preamp. Infrared detection 14 Multichannel detector head 15 Peripheral product for image sensor Multichannel detector heads incorporate a driver circuit designed for various types of image sensors (CCD area image sensors, InGaAs linear image sensors, NMOS linear image sensors). Controller for multichannel detector head is also available. Driver circuits that are designed to match the CCD image sensor and CMOS/NMOS/InGaAs linear image sensor types are provided. Spectrophotometer Raman spectroscopy Semiconductor inspection Radiation thermometry Multichannel spectrophotometry T O P I C Subminiature, low power consumption MEMS mirrors We provide miniature electromagnetic mirrors that incorporate our unique MEMS technology. Within a magnetic field generated by the magnet, electrical current flowing in the coil surrounding the mirror produces a Lorentz force based on Fleming s rule that drives the mirror. Hamamatsu MEMS mirrors offer a wide optical deflection angle and high mirror reflectivity as well as low power consumption. Optical principle Incident laser Current Magnet Force Force Current Magnetic field 34

33 Factory/Research laboratory/domestic sales office Miyakoda factory Toyooka factory Mikkabi IC Central research laboratory Mitsue factory Nishinihon sales office Factories Osaka sales office Sendai sales office Tsukuba labolatory Tsukuba sales office Tokyo branch office Opto-semiconductors : Main factory (Ichino), Mitsue factory, Shingai factory Electron tube products : Toyooka factory, Tenno glass works Beijing Hamamatsu photon techniques Ltd. (China) System products : Joko factory Laser products : Miyakoda factory Laboratories Central research laboratory Tsukuba research laboratory Industries development laboratory Domestic sales offices Hamamatsu Lake Hamana Industries development laboratory Lake Sanaru the Sea of Enshu Tomei express way Hamamatsu nishi IC Hamamatsu station Main factory (Ichino) Tenno glass works Hamamatsu IC Headquarters Chubu sales office Tenryu River Joko factory JR Tokaido line JR Tokaido Shinkansen line Shingai factory Tokyo sales office Osaka sales office Chubu sales office Sendai sales office Tsukuba sales office Nishinihon sales office Main factory (Ichino) Mitsue factory Shingai factory Annual sales ,751 40,000 38,137 43,298 45,735 49,338 80,937 85,108 90,732 92,583 99, ,786 Entire company Solid state division 0 10,000 20,000 30,000 40,000 50,000 60,000 70,000 80,000 90, , ,000 (million yen)