Silicon Avalanche Photodiode SAR-/SARP-Series

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1 Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a reach-through structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes. The APD is hermetically sealed in a modified TO-46 package, optional with integrated 905 nm filter. The SARP500-Series is an optimized version of the SAR500 with extremely low noise and dark current and is suitable for detection of very low light levels. The SARP500 is also available in a hermetically sealed TO-37 with thermoelectrical cooler. This enables the APD to be used in a variety of demanding applications including spectroscopy, fluorescence detection, LIDAR and medical applications. In addition, light pipe versions, which enable efficient coupling of light out of an optical fiber onto the APD, are also offered. FEATURES Very High Quantum Efficiency Low Noise, High Speed Multiplication gain, M>200 available 500 μm Diameter Active Area Gradual Multiplication Curve Wide Operating Temperature Range APPLICATIONS Rangefinding /LIDAR Optical Communication Systems Laser Scanners Spectroscopy Fluorescence Medical GENERIC CHARACTERISTICS AT T= 25 C SAR500X/SARP500X Min Typ Max Units Wavelength Range nm Peak Sensitivity 905 nm Page 1

2 ABSOLUTE MAXIMUM RATINGS SAR500X/SARP500X Min Typ Max Units Storage Temperature C Operating Temperature* C Reverse Current Peak Value (CW Operation) Reverse Current Peak Value (1 sec Duration) Forward Current I F at 25 C Average Value (CW Operation) Forward Current I F at 25 C Peak Value (1sec Duration) 200 μa 1 ma 5 ma 50 ma Max. Total Power Dissipation 60 mw Soldering (for 5 sec.) 200 C * Extended operating temperature range possible for special design considerations ELECTRICAL CHARACTERISTICS SAR500X SARP500X Min Typ Max Min Typ Max Units Diameter μm Breakdown ld= 10 μa Volt (peak) & M= A/W V br Temperature Coefficient V/ C Dark M= na Noise M= pa/sqrthz M= pf Rise M= psec Page 2

3 Fig.1: Spectral Response Fig.2: Quantum Efficiency vs. Wavelength Responsivity (A/W) Wavelength (nm) Quantum Efficiency. 1,0 0,9 0,8 0,7 0,6 0,5 0,4 0,3 0,2 0,1 0, Wavelength (nm) Fig. 3: Typical Dark Current Characteristics Fig. 4: Gain Voltage Characteristics 1,E ,E-06 Dark Current (A). 1,E-07 1,E-08 1,E-09 1,E C 0 C 1,E C +50 C +75 C 1,E Bias Voltage Gain Bias Voltage -25 C 0 C +25 C +50 C +75 C Fig. 5: Capacitance vs. Reverse Voltage Fig. 6: Typical APD Noise Density as a Function of Gain 14 10,00 12 Capacitance (pf) Noise Density (pa/sqrthz). 1,00 0,10 SAR500x SARP500x Bias Voltage 0, Gain Page 3

4 Fig.7: Excess Noise Factor Fig.8: Dark Current vs. Bias Voltage 100 1,E-05 1,E-06 Excess Noise Factor 10 SAR500x K eff =.04 SARP500x K eff =.02 Dark Current (A). 1,E-07 1,E-08 1,E-09 SAR500x 1,E-10 SARP500x Gain 1,E Bias Voltage PRODUCT NUMBER DESIGNATIONS S A R (P) Diameter 500 = 500 μm Package Style F2 = TO-46 (2 pin, with filter) F3 = TO-46 (3 pin, with filter) L3 = TO-46 (with ball lense) LP20 = TO-46 light pipe (200 μm) LP40 = TO-46 light pipe (400 μm) S2 = TO-46 (2 pin) S3 = TO-46 (3 pin) T6 = TO-37 (with TEC) T8 = TO-8 (with 2 stg. TEC) Page 4

5 PACKAGE DRAWINGS Package F2 TO-46 (2 pin, with filter) Package F3 TO-46 (3 pin, with filter) Page 5

6 Package L3 TO-46 (with ball lens) Package LP20/40 TO-46 light pipe (200/400 μm) Page 6

7 Package S2 TO-46 (2 pin) Package S3 TO-46 (3 pin) Page 7

8 Package T6 TO-37 (with TEC) Package T8 TO-8 (with 2 stg. TEC) Page 8

9 PRODUCT CHANGES LASER COMPONENTS reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. ORDERING INFORMATION Products can be ordered directly from LASER COMPONENTS or its representatives. For a complete listing of representatives, visit our website at Custom designed products are available on request. 10/09 / V9 / HW / lcd/ sar-series.doc Page 9

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