Fuji High Performance Power MOSFET
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- Herbert Lester
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1 Realization of High Efficiency & High Frequency Fuji High Performance Power MOSFET Fuji Electric Co.,Ltd. W Fuji Power MOSFET : Development Concept TEnergy Saving TResource Saving THigh Quality THigh Performance TConformity with Regulations 2
2 WDevelopment Road Map Plan of Fuji High voltage Power MOSFET FAP-ⅡS S series FAP-G series (400V~1000V) FAP-G series 450V~900V Fast switching Low loss High avalanche capability TO-247 Package JEDEC STD. Compatible M-Power 1 1 Soft Switching Synchronous Operation Protection and more Ultra Fast switching Low switching loss and low RDS(on) High avalanche capability TO-247 Package Line up M-Power 1 1 Line up M-Power 2 2 High Efficiency M-Power 2 2 Line up M-Power 3 3 * M-Power :Multi chip intelligent power switch 3 Trench MOSFET Ultra Low RDS(on) High Avalanche Capability WDevelopment Road Map Plan of Fuji Low Voltage Power MOSFET FAP-ⅢB B Lineup (30~200V) FAP-G series 150V FAP-G series (100V~300V) Ultra Fast Ultra Low Gate Charge High frequency switching M-Power L1 for DC-DC Conversion TFP Package TFP:Thin Flat Package Small & Low Profile D2-Pack Separate Signal Source Terminal TFP Package Lineup 4
3 WPower Supply Market Trend & Requirements Energy Saving Resource Saving Market Trend High Efficiency Low Power Loss Requirements Reduction of MOSFET Loss Reduction of Gate Drive Loss High Quality Improve Ruggedness Higher Avalanche Ruggedness High Performance For Regulations Low Stand-by Loss High Efficiency in Stand-by Reduction of MOSFET Loss Reduction of Gate Drive Loss Market Focus Reduction of Low Stand-by Loss Improvement of Efficiency 5 WPower MOSFET Design Points for High Efficiency Simulation of MOSFET Loss Ploss [W] Fly-back Converter RCC Converter Forward Converter Ptotal [W] Ptoff [W] Output Io [A] Ploss [W] fs[khz] Ptotal [W] Ptoff [W] Pdrive [W] Output Io [A] fc [khz] Ploss [W] 10 5 Ptotal [W] Ptoff [W] Output Io [A] Needs Improved Efficiency in Stand-by Improved Efficiency in Rated Load Improved Efficiency in Stand-by Improved Efficiency in Stand-by Improved Efficiency in Rated Load Design Points Reduction of Turn-off Loss Reduction of Turn-off Loss Reduction of Gate Drive Loss Reduction of Turn-off Loss Design Points for Higher Efficiency WReduction of Turn-off loss WReduction of Gate Drive Loss 6
4 WPower MOSFET Design Points ID Design Points for Reduction of Power loss VGS VDS Reduction of on-resistance(ron) K Gate-Drain Charge(Qgd) Simple Figure-of of-merit FOM=Ron RonKQgd [ nc nc] Qgs Qgd1 Qgd2 Ploss Irms R 2 ( K DS ( on) Qgd1Г Qgd2 ) Г ( I K KV Ig DS K fc) Г ( Qg KV GS K fc) Conductive Loss Switching Loss Gate Drive Loss 7 WSuperFAP SuperFAP-G G Technologies Technology QPJ (Quasi-Plane Plane-Junction) and OGR (Optimized-Guard Guard-Ring) QPJ (Quasi-Plane Plane-Junction) Achieve the breakdown voltage of the plane junction. Minimize the gate-drain overlap (JFET-channel width) while keeping the JFET resistance low. 8
5 Eoff FAP-2A series 2SK1940 Company A Gen.5 2SK RDS(on) [ohm] WReduction of Turn-off Loss : Improved Eoff-Rds Rds(on) trade-off 600V/0.75ohm device Super FAP-G SuperFAP-G Technologies QPJ & OGR Technology 1/10 Lower Crss against conventional FAP-2A by reducing Gate Electrode area. Improvement of RDS(on)-Eoff trade-off characteristic by 25% compared to the conventional type 9 W Reduction of Gate Drive Loss 14 VGS [V] Super FAP-G 60% Lower Gate Charge (Qg) characteristic against type by 90% reduction of Crss. More than 60% reduction of Gate Drive Loss at stand-by mode. 4 P Drive Qg KV GS K fc Qg [nc] 10
6 WLower RonNQgd against Competitor 600V MOSFET s Super FAP-G 2SK MR 2SK R Company A 2SK2843 Company B IRFIB6N60A Company C SPP07N60C2 Package TO-220F TO-3PF TO-220F TO-220F TO-220 VDS 600V 600V 600V 600V 600V VGS H30V H30V H30V H30V ID H12 12A H16 16A H10A H5.5A H A VGS(th) 3~5V 2.5~3.5V 3.0~5.0V 2.0~4.0V 3.5~5.5V RDS(on) typ Qg typ. 34nC 100nC 45nC 33nC 27nC Qgd typ. 11nC 28nC 20nC 13nC 16.5nC FOM: RonQgd 5.5 nc 10.4 nc 10.8 nc 8.45 nc 8.91nC More than 2 times of the FOM (RonQgd RonQgd) 11 WFeatures of Super FAP-G I. Lower Turn-Off Loss II. III. IV. 75% Lower Eoff against type Lower Gate Charge (Qg) 60% Lower Qg against type Higher Avalanche Ruggedness Improved Avalanche Ruggedness at high temp. Smaller Package with Same RDS(on) ex) 600V/0.75ohm/TO-3P 600V/0.75ohm/TO
7 WRated Load mode : High Efficiency & Reduced Temp. rise Super FAP-G G 600V/0.75ohm/TO-220F 600V/0.75ohm/TO-3PF VGS=10V/div VGS=10V/div ID=1.0A/div VDS=100V/div Faster tf ID=1.0A/div VDS=100V/div Pout=125W/Fly-back(fc=130kHz) MOSFET Loss Efficiency T(case-ambient) ambient) Super FAP-G G 600V/0.75ohm/TO-220F 4.47W 83.3% 34.1 deg. 600V/0.75ohm/TO-3PF (FAP-2A series) 8.31W 81.4% 54.0 deg. TEven smaller package for the same output power. T20% gain in the output power at the same temp. 13 WStand Stand-by mode : Reduced Loss & Improved Efficiency Super FAP-G G 600V/0.75ohm/TO-220F 600V/0.75ohm/TO-3PF VGS=10V/div VGS=10V/div ID=0.5A/div VDS=100V/div Lower Qg ID=0.5A/div VDS=100V/div Pout=2W/Fly-back(fc=130kHz) MOSFET Loss Efficiency T(case-ambient) ambient) Super FAP-G G 600V/0.75ohm/TO-220F 0.82W 35.1% 2.6 deg. 600V/0.75ohm/TO-3PF (FAP-2A series) T MOSFET total loss : 35% Reduction T Conversion efficiency : 3.2% Improved 1.28W 31.9% 5.8 deg. 14
8 W Realized Super Low loss Super FAP-G G 600V/0.75ohm/TO-220F VGS=10V/div 600V/0.55ohm/TO-3PF VGS=10V/div VDS=100V/div ID=2.5A/div Faster tf ID=2.5A/div VDS=100V/div Pout=170W/Fly-back(fc=130kHz) MOSFET Loss Efficiency T(case-ambient) ambient) Super FAP-G G 600V/0.75ohm/TO-220F 9.37W 79.7% 83.3 deg. 600V/0.55ohm/TO-3PF (FAP-2A series) 14.55W 79.0% 89.2 deg. T Same Temp. as 25% lower RDS(on) of type T Applicable in the SMPS with higher power. 15 W Super FAP-G G : Achieved to CISPR Class.B 70 EMC Noise (Fly-back Converter) ADVANTEST R3361A 50 EMR Noise ADVANTEST R3361A 60 CISPR22 Class B (FAP-2S:Low Noise type) Super FAP-G CISPR22 Class B EMC Level [dbuv] EMR Level [dbuv/m] (FAP-2S:Low Noise type) Super FAP-G frequency [MHz] frequency [MHz] Both of EMR & EMC are conformed to CISPR pub.22 Class.B EMC is at the same level as conventional low noise MOSFET 16
9 W Advantage of using Super FAP-G Stand Stand-by mode : Reduced Loss/Improved Efficiency ex) 3.2% improved stand-by Efficiency at Po=2W Rated Output : Reduced Loss/Reduced Temp. Rise ex) 46% reduced FET loss at Po=125W 20% increased Output power at the same temp. Down sizing of the component is possible Same Temp. as 25% lower RDS(on) of type Applicable in the SMPS with higher power. PWM PWM-IC : Reduced Temp. Rise 17 WComparison with Competitors at Rated Load mode Fuji Super FAP-G Company A Company B 2SK3502 2SK2843 IRFIB6N60A VDS (SPEC) 600V 600V 600V ID (SPEC) 10A 10A 5.6A RDS(on) (SPEC) 0.75 ohm 0.75 ohm 0.75 ohm Package TO-220F TO-220F TO-220F Rated Load Po=100W MOSFET Loss Temp. Rise 3.37W 19.4 deg. 4.40W 31.0 deg. 4.10W 28.0 deg. More Power MOSFET Loss 4.10W Po=120W Temp. Rise 30.0 deg. fc=130khz MOSFET Loss Reduced by 20% T 20% reduction for heat sink size with the same temp. T 20% increased Output power with the same temp. 18
10 W Comparison with Competitors at Stand-by mode Fuji Super FAP-G Company A Company B 2SK3502 2SK2843 IRFIB6N60A VDS (SPEC) 600V 600V 600V ID (SPEC) 10A 10A 5.6A RDS(on) (SPEC) 0.75 ohm 0.75 ohm 0.75 ohm Package TO-220F TO-220F TO-220F Stand-by MOSFET Loss 0.82W 0.88W 0.97W Mode Efficiency 35.1% 34.2% 33.8% Po=2W Temp. Rise 2.6 deg. 3.9 deg. 4.8 deg. fc=130khz Stand-by Efficiency Improved by 1~2% Better choice for the following Energy Saving regulations ; Reduce Stand-by Power Loss Improved Stand-by Conversion Efficiency 19 WFeatures of Super FAP-G G for DC-DC Conversion I. Lower Turn-off Loss II. III. IV. 65% Lower Eoff against conventional type Lower Gate Charge (Qg) 65% Lower Qg against conventional type Higher Switching Frequency 65% Faster switching speed against conventional type Low Profile SMD package : TFP package 1.7mm thinner against conventional D2-pack 20
11 WLower RonNQgd against Competitor 150V MOSFET s Super FAP-G 2SK SK S Company A 2SK3387 Company B IRF3315S Package TFP D2-PACK TFP D2-PACK VDS 150V 150V 150V 150V VGS ID H23 23A H20 20A H18A H21A VGS(th) 3~5V 1~2.5V 0.8~2V 2~4V RDS(on) typ. 54m 55m 80m 55m Qg typ. 34nC 100nC 60nC 95nC Qgd typ. 12.5nC 30nC 14nC 31nC FOM: RonQgd nc 1.65 nc 1.12 nc 1.71nC More than 2 times of the FOM (RonQgd RonQgd) 21 WLower RonNQgd against Competitor 250V MOSFET s Super FAP-G 2SK SK S Company A 2SK3388 Company B IRF644NS Package TFP D2-PACK TFP D2-PACK VDS 250V 250V 250V 250V VGS ID H25 25A H18 18A H20 20A H14 14A VGS(th) 3~5V 2.5~3.5V 1.5~3.5V 2~4V RDS(on) typ. 75m 130m 82m 240m Qg typ. 50nC 52nC 100nC 36nC Qgd typ. 16nC 16nC 30nC 18nC FOM: RonQgd 1.20 nc 2.08 nc 2.46 nc 3.32nC More than 2 times of the FOM (RonQgd RonQgd) 22
12 WSuper FAP-GL achieve high efficiency under whole Load range 70 Efficiency vs. Load for 87.5W Half-Brick (390kHz,48V in,2.5v out,active reset) 78 Efficiency vs. Load for 87.5W Half-Brick (390kHz,48V in,2.5v out, Active reset) Conversion Efficiency η [%] SK S Super FAP-G 2SK Output Power [W] Conversion Efficiency η [%] SK S Super FAP-G 2SK Output Power [W] Efficiency (P=2.5W) Efficiency (P=87.5W) T(case-ambient) ambient) Super FAP-G G 2SK % 74.6% 30.4 deg. 2SK S 40.5% 73.9% 35.3 deg. T Super FAP-GL improve efficiency by up to 4% compared to conventional type. T 5 degree Lower temperature rise against conventional type. 23 W TFP : Low Profile SMD Package TFP-Package Drain D2-PACK Package S1 S2 G T 40% smaller Package Volume against D2-PACK. T 60% smaller Footprint against D2-PACK T Low Profile package (<2.8mm) T Separate power & control connections 24
13 W SuperFAP-G G Products Lineup (100V~150V) Type Name Package VDSS ID RDS(on) max. QG QGD Application type Sample Note 2SK TO-220 2SK MR TO-220F 2SK L,S D2-PACK 100V 20A 62m 22nC 6nC 2SK TFP 2SK TO-220 DC/DC Converter 2SK MR TO-220F Active Reset 100V 30A 44m 32nC 9nC 2SK L,S D2-PACK 2SK TFP 2SK TO-220 or 2SK3216 2SK MR TO-220F Passive Reset 2SK V 50A 25m 52nC 18nC 2SK L,S D2-PACK 2SK TFP 2SK TO-220 2SK MR TO-220F 2SK L,S D2-PACK 150V 16A 105m 21nC 6nC 2SK TFP 2SK TO-220 DC/DC Converter 2SK MR TO-220F Active Reset 150V 23A 70m 34nC 12.5nC 2SK L,S D2-PACK or 2SK TFP Passive Reset 2SK MR Logic Level TO-220F 150V 23A 70m 46nC 12.5nC 2SK2098 2SK TO-220 2SK3218 2SK MR TO-220F 2SK V 40A 41m 52nC 18nC 2SK L,S D2-PACK 2SK TFP 25 WSuperFAP SuperFAP-G G Products Lineup (200V~300V) Type Name Package VDSS ID RDS(on) max. QG QGD Application 2SK TO-220 2SK2251 2SK MR TO-220F DC/DC Converter 2SK V 13A nC 5nC 2SK L,S D2-PACK Active Reset 2SK2849 2SK TFP or 2SK TO-220 2SK MR TO-220F 200V 30A 66m 51nC 16nC 2SK L,S D2-PACK Passive Reset 2SK TFP 2SK TO-220 2SK MR TO-220F 2SK L,S D2-PACK 250V 10A nC 5nC 2SK TFP DC/DC Converter 2SK TO-220 Active Reset # 2SK902 2SK MR TO-220F or 250V 25A nC 16nC 2SK L,S D2-PACK Passive Reset 2SK TFP 2SK MR TO-220F 300V 12A nC 5.6nC Forward Active Reset 2SK2098 type Sample Note 26
14 WSuperFAP SuperFAP-G G Products Lineup (450V~600V) Type Name Package VDSS ID RDS(on) max. QG QGD Application type Sample Note 2SK TO V 8A nC 6.5nC Various 2SK MR TO-220F 2SK1101 2SK TO V 5A nC 2.5nC Various 2SK2021 2SK MR TO-220F 2SK2022 2SK TO V 8A nC 5.5nC Various 2SK1981 2SK MR TO-220F 2SK1982 2SK TO V 12A nC 10nC Forward #2SK1937 2SK MR TO-220F PFC(Hard Switched) #2SK2209 2SK TO V 14A nC 10.5nC Forward #2SK2644 2SK MR TO-220F PFC(Hard Switched) F2318 TO V 16A 0.37 (43nC) (15nC) Forward 02/3rdQ Under Development F2319 TO-220F PFC(Hard Switched) #2SK2257 2SK TO V 21A nC 20nC Forward 2SK3338 2SK R TO-3PF PFC(Hard Switched) F2322 TO V 43A 0.11 (140nC) (47nC) Forward 02/2ndQ Under Development 2SK TO V 6A nC 5.5nC Fly-back 2SK2027 2SK MR TO-220F 2SK2028 2SK TO V 10A nC 10nC Fly-back #2SK1940 2SK MR TO-220F #2SK2148 2SK TO V 12A nC 11.5nC Fly-back 2SK MR TO-220F F2320 TO V 14A 0.52 (43nC) (15nC) Fly-back 02/3rdQ Under Development F2321 TO-220F 2SK TO V 17A nC 20nC Fly-back 2SK R TO-3PF F2323 TO V 35A 0.16 (140nC) (47nC) Fly-back 02/2ndQ Under Development 27 WSuperFAP SuperFAP-G G Products Lineup (700V~900V) Type Name Package VDSS ID RDS(on) max. QG QGD Application type Sample Note F2276 TO V 8A 1.18 Fly-back 02/2ndQ Under Development F2277 TO-220F F2278 TO V 2.5A 4.0 Single Forward 02/2ndQ Under Development F2279 TO-220F 2SK TO V 5A 1.9 Single Forward 2SK /2ndQ Under Development 2SK MR TO-220F 2SK2101 2SK TO V 4.6A 2.5 Single Forward 2SK /2ndQ Under Development 2SK MR TO-220F 2SK1985 2SK TO V 5.5A 2.0 Single Forward 2SK962 02/2ndQ Under Development 2SK MR TO-220F 2SK1217 2SK TO V 8A 1.4 Single Forward 2SK /2ndQ Under Development 2SK R TO-3PF 2SK
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Features. Description. Table 1: Device summary Order code Marking Package Packing STF5N60M2 5N60M2 TO-220FP Tube
N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@ TJmax RDS(on) max. ID STF5N60M2 650 V 1.4 Ω 3.5 A Extremely low gate
SPN80T06. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool
DESCRIPTION The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially
TO-220 G D S. T C = 25 C unless otherwise noted
500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
STN4420. N-Channel Enhancement Mode MOSFET. 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE APPLICATIONS PIN CONFIGURATION
DESCRIPTION The STN is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable
V DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
STP4435. P-Channel Enhancement Mode MOSFET. -30V P-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION
DESCRIPTION The STP35 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is
IRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
Dual N - Channel Enhancement Mode Power MOSFET 4502
Dual N - Channel Enhancement Mode Power MOSFET 4 344 DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or
SSG4501-C N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V, R DS(ON) 28mΩ P-Ch: -5.3A, -30 V, R DS(ON) 50mΩ
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
SGT190N60SJ /SGF190N60SJ/SGW190N60SJ
SGT19N6SJ /SGF19N6SJ/SGW19N6SJ 6V, 2.5A,.19Ω Features RDS(on) =.19Ω (Max.)@ VGS = 1V, ID = 1A Ultra low gate charge ( Typ. Qg = 37nC) Low effective output capacitance 1% avalanche tested RoHS compliant
FKD4903. N-Ch and P-Ch Fast Switching MOSFETs
FKD93 % EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID V 3mΩ 3A -V 5mΩ -A Description
Automotive N-channel 60 V, 0.9 mω max., 300 A STripFET F7 Power MOSFET in a TO-LL package. Features. Description G1DTABS
Automotive N-channel 60 V, 0.9 mω max., 300 A STripFET F7 Power MOSFET in a TO-LL package Datasheet - preliminary data Prerelease product(s) TAB 1 TAB 8 8 1 TO-LL Figure 1: Internal schematic diagram D
Complementary MOSFET
General Description uses advanced trench technology to provide excellent Rds(on) and low gate charge. Complementary MOSFET Features N-channel Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)
AM9435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION The is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to
N-channel 600 V, Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features STW42N60M2-EP.
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP D²PAK
AM V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process
SPN9910. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch Synchronous Buck Converter
DESCRIPTION The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
V DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
STD5N95K5, STF5N95K5, STP5N95K5, STU5N95K5
STD5N95K5, STF5N95K5, STP5N95K5, N-channel 950 V, 2 Ω typ., 3.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK Datasheet - production data TAB DPAK 2 3 1 TAB 1 2 3 TO-220FP 3 TAB 1 2 1 2
Symbol Parameter TSB10N60S TSP10N60S TSF10N60S Unit V DSS Drain-Source Voltage 600 V Drain Current -Continuous (TC = 25 ) 9.5*
TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance
Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V
% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 3V mω A Description TO Pin Configuration
SJ-FET TSD5N60S/TSU5N60S
September, 2013 SJ-FET TSD5N60S/TSU5N60S OSD5N60S/OSU5N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism
MOS FIELD EFFECT TRANSISTOR NP110N04PDG
DATA SHEET MOS FIELD EFFECT TRANSISTOR NPN4PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NPN4PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING
N & P-Channel 100-V (D-S) MOSFET
N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives
P-channel -30 V, 0.01 Ω typ., A, STripFET H6 Power MOSFET in an SO-8 package. Features. Description
P-channel -30 V, 0.01 Ω typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package Datasheet - production data Features Order code VDS RDS(on) max ID STS10P3LLH6-30 V 0.012 Ω -12.5 A Very low on-resistance
SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R380S
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R380S Rev. 1.2 Oct. 2017 September, 2013 SJ-FET SSF80R380S/SSP80R380S/SSW80R380S/SSA80R380S
Features. Description. Table 1: Device summary Order code Marking Package Packing STF24N60DM2 24N60DM2 TO-220FP Tube
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 650 V 0.200 Ω 18 A TO-220FP Fast-recovery body
SJ-FET. TSA20N60S, TSK20N60S 600V N-Channel MOSFET. September, 2013
TSA20N60S, TSK20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
N-channel 30 V, 2.15 mω typ., 120 A Power MOSFET in a TO-220 package. Features. Order code. Description. AM01475v1_Tab
N-channel 30 V, 2.15 mω typ., 120 A Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP200N3LL 30 V 2.4 mω 120 A 176.5 W Very low on-resistance
Automotive-grade N-channel 400 V, Ω typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package. Features. Description. Table 1: Device summary
Automotive-grade N-channel 400 V, 0.063 Ω typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP45N40DM2AG 400 V 0.072 Ω 38
N-channel 650 V, 1.6 Ω typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package. Features
N-channel 650 V, 1.6 Ω typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package Datasheet - production data Features 1 2 3 4 Order code VDS RDS(on) max. ID STL3N65M2 650 V 1.8 Ω 2.3 A 8 7 6
V DSS R DS(on) max I D. 20V GS = 10V 8.9A. 71 P A = 25 C Power Dissipation 2.0 P A = 70 C Power Dissipation Linear Derating Factor
Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box PD - 95858A IRF895 HEXFET Power MOSFET V DSS R DS(on) max I D 20V 8.3m:@V GS = V 8.9A
Features. Description. Table 1: Device summary Order code Marking Package Packing STW56N65DM2 56N65DM2 TO-247 Tube
N-channel 650 V, 0.058 Ω typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW56N65DM2 650 V 0.065 Ω 48 A 360 W TO-247 1 3
STP5N105K5. N-channel 1050 V, 2.9 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package. Features. Applications. Description
STP5N05K5 N-channel 050 V, 2.9 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP5N05K5 050 V 3.5 Ω 3 A 85 W Worldwide best
Features. Description. Table 1: Device summary Order code Marking Package Packing STW70N60DM2 70N60DM2 TO-247 Tube
N-channel 600 V, 0.037 Ω typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW70N60DM2 600 V 0.042 Ω 66 A 446 W TO-247 1 3
SVF4N65T/F(G)/M_Datasheet
4A, 650V N-CHANNEL MOSFET SVF4N65T/F(G)/M_Datasheet GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell
IRF7821PbF. HEXFET Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
SVF12N65T/F_Datasheet
12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology.
Symbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit 20* 20* I D -Continuous (TC = 100 ) 12*
TSP20N60S,TSF20N60S, TSB20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance
Prerelease Product(s) - Prerelease Product(s)
N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package Figure 1: Internal schematic diagram Features Order code VDS Datasheet - production data RDS(on) max. ID PTOT STE60N105DK5
MEI. 20V P-Channel Enhancement-Mode MOSFET P2301BLT1G. Features. Simple Drive Requirement Small Package Outline Surface Mount Device G 1 2 V DS -20
V P-Channel Enhancement-Mode MOSFET VDS= -V RDS(ON), Vgs@-.5V, Ids@-.A = mω RDS(ON), Vgs@-.5V, Ids@-.A = 15 mω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF10N60M2 10N60M2 TO-220FP Tube
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@TJmax. RDS(on) max. ID STF10N60M2 650 V 0.60 Ω 7.5 A Extremely low gate
STB33N60DM2, STP33N60DM2, STW33N60DM2
STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 Ω typ., 24 A MDmesh DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features Order code VDS @ TJmax. RDS(on)
IRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
Dual N-channel 60 V, 9 mω typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package. Features. Description
Dual N-channel 60 V, 9 mω typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package Datasheet - production data Features Order code VDS RDS(on) max. ID STL50DN6F7 60 V 11 mω 57 A Among
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID STFU13N65M2 650 V 0.43 Ω 10A 1 2 3
Features. Description. Table 1: Device summary. Order code Marking Package Packing STL24N60DM2 24N60DM2 PowerFLAT 8x8 HV Tape and reel
N-channel 600 V, 0.195 Ω typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 5 STL24N60DM2 650 V 0.220 Ω 15 A 4
SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 600V Super Junction Power Transistor SS*20N60S. Rev. 1.
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.04 September, 2013 SSW20N60S/SSA20N60S 600V N-Channel MOSFET
N-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS & R g tested High commutation
Features. Description. AM15572v1_tab. Table 1: Device summary Order code Marking Package Packing STP18N60DM2 18N60DM2 TO-220 Tube
N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID STP18N60DM2 600 V 0.295 Ω 12 A Fast-recovery body diode
Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
V DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
Features. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube
N-channel 600 V, 0.045 Ω typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW56N60M2-4 650 V 0.055 Ω 52 A Excellent switching
Features. Description. Table 1: Device summary Order code Marking Package Packing STL90N10F7 90N10F7 PowerFLAT 5x6 Tape and reel
N-channel 100 V, 7 mω typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL90N10F7 100 V 8 mω 70 A 100 W Among the
HCS90R1K5R 900V N-Channel Super Junction MOSFET
HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
TPIC3322L 3-CHANNEL COMMON-DRAIN LOGIC-LEVEL POWER DMOS ARRAY
Low r DS(on)....6 Ω Typ High-Voltage Outputs...6 V Pulsed Current...5 A Per Channel Fast Commutation Speed Direct Logic-Level Interface description SOURCE GATE SOURCE SOURCE3 D PACKAGE (TOP VIEW) 3 4 8
HCS80R850R 800V N-Channel Super Junction MOSFET
HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
V DSS R DS(on) max Qg (typ.) 60V GS = 10V 24nC
Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
IRF6602/IRF6602TR1 HEXFET Power MOSFET
l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2
Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68
N-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS tested High commutation performance
SMC3251S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION
Single P-Channel MOSFET DESCRIPTION SMC5 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high
SMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
20V P-Channel Enhancement-Mode MOSFET
1 3 FEATURES RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System
APT34N80B2C3G APT34N80LC3G
APT3NB2C3G APT3NLC3G *G Denotes RoHS Compliant, Pb Free Terminal Finish. V 3A.15Ω Super Junction MOSFET T-MAX COOLMOS TO-26 Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate
P-Channel Enhancement Mode MOSFET
Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of