Lecture 31 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 25, 2007
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1 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-1 Lecture 31 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 25, 2007 Contents: 1. Short-channel effects (cont.) Reading assignment: P. K. Ko, Approaches to Scaling.
2 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-2 Key questions Why does the threshold voltage seem to depend on the gate length of a MOSFET? Why does the threshold voltage of a MOSFET seem to depend on V DS?
3 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture Short-channel effects (cont.) V T dependence on L Ideally, V T does not depend on L, it only depends on x ox and N A. If L is short enough, depletion regions of source and drain start overlapping underneath channel. "long" MOSFET "short" MOSFET n + n + n + n + n + n + p p ΔE C E C E fe E C E fe V T independent of L V T depends on L: L V T VT VT (long) L
4 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-4 Complex 2D electrostatic problem: ΔV T depends on the relative strength of the lateral electrostatics vs. the transversal electrostatics ( electrostatic integrity ). The tighter the gate controls φ s, the weaker ΔV T dependence on L. Key dependencies: x ox ΔV T N A ΔV T x j L eff = L x j ΔV T L n + n + x j L eff n + 0.7x j p This is bad! long MOSFET: V T = f(x ox,n A ) short MOSFET: V T = f(x ox,n A,L,x j ) Most important consequence: V T harder to control in manufacturing environment. V T model in next section.
5 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-5 Drain-induced barrier lowering (DIBL) Depletion region associated with drain junction expands as V DS additional V T shift. n + n + n + p E C E fe VT VT (long) VDS L
6 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-6 V DS =1.5 V V DS =0.05 V [from Liu et al., TED 40, 86 (1993)] V DS =0.05 V V DS =1.5 V Liu, Z.-H., C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng. "Threshold Voltage Model for Deep-Submicrometer MOSFET's." IEEE Transcations on Electron Devices 40, no. 1 (1993): Copyright 1993 IEEE. Used with permission.
7 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-7 Simple analytical approximation to ΔV T [Liu et al., TED 40, 86 (1993)]: ΔV T = [3(φ bi φ sth )+ V DS ]e L eff /λ + 2 (φ bi φ sth )(φ bi φ sth + V DS )e L eff /2λ with characteristic length: λ = ɛ s ɛox x ox x dmax and L eff = L x j Quantification of DIBL: DIBL = V T (V DS = V DD ) V T (V DS =0.1 V ) V DD 0.1 mv/v for a certain L device.
8 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-8
9 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-9
10 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-10
11 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-11
12 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture MOSFET design approach to manage DIBL: 1. shallower S/D junctions: x j =0.1 µm 0.05 µm 2. thinner gate oxide: x ox =9 nm 6 nm 3. increased body doping: N A = cm cm 3
13 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture Comparison of simple model with 2D simulations: Liu, Z.-H., C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng. "Threshold Voltage Model for Deep-Submicrometer MOSFET's." IEEE Transcations on Electron Devices 40, no. 1 (1993): Copyright 1993 IEEE. Used with permission.
14 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture Comparison of simple model with experiments: Liu, Z.-H., C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng. "Threshold Voltage Model for Deep-Submicrometer MOSFET's." IEEE Transcations on Electron Devices 40, no. 1 (1993): Copyright 1993 IEEE. Used with permission. Liu, Z.-H., C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng. "Threshold Voltage Model for Deep-Submicrometer MOSFET's." IEEE Transcations on Electron Devices 40, no. 1 (1993): Copyright 1993 IEEE. Used with permission.
15 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture DIBL also affects I off : V DS V T I off Figure removed due to copyright restrictions. Shift of subthreshold curves. Figure 5 on page 41 in Fichtner, W., and H. W. Potzl. "MOS Modelling by Analytical Approximations." International Journal of Electronics 46, no. 1 (1979):
16 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture Key conclusions V T depends on L and V DS : For short L, V T depends on L: L V T. Drain-induced barrier lowering (DIBL): impact of V DS on V T : V DS V T. ΔV T reflects relative strength of lateral electrostatics vs. transveral electrostatics ( electrostatic integrity ). Electrostatic integrity improves if x ox, N A, L, x j. DIBL problematic because: V T hard to control I off
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