CA3046. General Purpose NPN Transistor Array. Features. Applications. Ordering Information. Pinout. Data Sheet May 2001 File Number 341.

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1 CA Data Sheet May File Number. General Purpose NPN Transistor Array The CA consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. Ordering Information PART NUMBER (BRAND) TEMP. RANGE ( o C) PACKAGE PKG. NO. CA - to Ld PDIP E. CAM () - to Ld SOIC M. Features Two Matched Transistors - V BE Match...±mV - I IO Match...µA (Max) LowNoiseFigure...dB(Typ)atkHz General Purpose Monolithic Transistors Operation From DC to MHz Wide Operating Current Range Full Military Temperature Range Applications Three Isolated Transistors and One Differentially Connected Transistor Pair for Low Power Applications at Frequencies from DC Through the VHF Range Custom Designed Differential Amplifiers Temperature Compensated Amplifiers CAM9 () Pinout - to Ld SOIC Tape and Reel M. See Application Note, AN9 Application of the CA8 Integrated-Circuit Transistor Array for Suggested Applications CA (PDIP, SOIC) TOP VIEW Q Q SUBSTRATE DIFFERENTIAL PAIR Q Q 9 7 Q 8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures INTERSIL or -7-7 Intersil and Design is a trademark of Intersil Americas Inc. Copyright Intersil Americas Inc.

2 CA Absolute Maximum Ratings Collector-to-Emitter Voltage (V CEO )... V Collector-to-Base Voltage (V CBO )... V Collector-to-Substrate Voltage (V CIO,Note)... V Emitter-to-Base Voltage (V EBO )... V Collector Current (I C )...ma Operating Conditions TemperatureRange... - o Cto o C Thermal Information Thermal Resistance (Typical, Note ) θ JA ( o C/W) θ JC ( o C/W) PDIPPackage... 8 N/A SOICPackage... N/A Maximum Power Dissipation (Any One Transistor) mw Maximum Junction Temperature (Plastic Package) o C MaximumStorageTemperatureRange... - o Cto o C Maximum Lead Temperature (Soldering s) o C (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES:. The collector of each transistor of the CA is isolated from the substrate by an integral diode. The substrate (Terminal ) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.. θ JA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications, characteristics apply for each transistor in CA as specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DC CHARACTERISTICS Collector-to-Base Breakdown Voltage V (BR)CBO I C =µa, I E = - V Collector-to-Emitter Breakdown Voltage V (BR)CEO I C =ma,i B = - V Collector-to-Substrate Breakdown Voltage V (BR)CIO I C =µa, I CI = - V Emitter-to-Base Breakdown Voltage V (BR)EBO I E =µa, I C = 7 - V Collector Cutoff Current (Figure ) I CBO V CB =V,I E = -. na Collector Cutoff Current (Figure ) I CEO V CE =V,I B = - See Fig.. µa Forward Current Transfer Ratio (Static Beta) h FE I C = ma (Note ) (Figure ) I C =ma - - I C =µa Input Offset Current for Matched Pair Q and Q. I IO -I IO (Note)(Figure),I C =ma -. µa Base-to-Emitter Voltage (Note ) (Figure ) V BE I E =ma V I E = ma V Magnitude of Input Offet Voltage for Differential Pair V BE -V BE (Note ) (Figures, 7),I C = ma -. mv Magnitude of Input Offset Voltage for Isolated Transistors V BE -V BE, V BE -V BE, V BE -V BE (Note ) (Figures, 7) Temperature Coefficient of Base-to-Emitter Voltage (Figure ),I C = ma -. mv,i C = ma mv/ o C Collector-to-Emitter Saturation Voltage V CES I B =ma,i C = ma -. - V Temperature Coefficient: Magnitude of Input Offset Voltage (Figure 7) V BE T V IO T DYNAMIC CHARACTERISTICS Low Frequency Noise Figure (Figure 9) NF f = khz,,i C =µa, Source Resistance = kω,i C =ma -. - µv/ o C -. - db Low Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure ) h FE f=khz,,i C =ma Short Circuit Input Impedance (Figure ) h IE f=khz,,i C =ma -. - kω Open Circuit Output Impedance (Figure ) h OE f=khz,,i C =ma -. - µs

3 CA Electrical Specifications, characteristics apply for each transistor in CA as specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Open Circuit Reverse Voltage Transfer Ratio (Figure ) h RE f=khz,,i C =ma -.8x Admittance Characteristics Forward Transfer Admittance (Figure ) Y FE f=khz,,i C =ma - -j. - - Input Admittance (Figure ) Y IE f=khz,,i C = ma -. + j. - - Output Admittance (Figure ) Y OE f=khz,,i C =ma -.+j. - - Reverse Transfer Admittance (Figure ) Y RE f=khz,,i C = ma - See Fig. - - Gain Bandwidth Product (Figure ) f T,I C = ma - MHz Emitter-to-Base Capacitance C EB V EB =V,I E = -. - pf Collector-to-Base Capacitance C CB V CB =V,I C = pf Collector-to-Substrate Capacitance C CI V CS =V,I C = pf NOTE:. Actual forcing current is via the emitter for this test. Typical Performance Curves COLLECTOR CUTOFF CURRENT (na) I E = V CB =V V CB = V V CB =V - 7 COLLECTOR CUTOFF CURRENT (na) I B = V CE =V V CE = V 7 FIGURE. TYPICALCOLLECTOR-TO-BASECUTOFFCURRENT vs TEMPERATURE FOR EACH TRANSISTOR FIGURE. TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT vs TEMPERATURE FOR EACH TRANSISTOR STATIC FORWARD CURRENT TRANSFER RATIO (h FE ) h FE h FE OR h FE h h FE FE BETA RATIO INPUT OFFSET CURRENT (µa)..... EMITTER CURRENT (ma) FIGURE. TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO AND BETA RATIO FOR Q AND Q vs EMITTER CURRENT.... FIGURE. TYPICAL INPUT OFFSET CURRENT FOR MATCHED TRANSISTOR PAIR Q Q vs COLLECTOR CURRENT

4 CA Typical Performance Curves (Continued) BASE-TO-EMITTER VOLTAGE (V) V BE INPUT OFFSET VOLTAGE.... EMITTER CURRENT (ma) INPUT OFFSET VOLTAGE (mv) BASE-TO-EMITTER VOLTAGE (V) I E =ma I E =ma I E =.ma FIGURE. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE CHARACTERISTICS AND INPUT OFFSET VOLTAGE FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs EMITTER CURRENT FIGURE. TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC vs TEMPERATURE FOR EACH TRANSISTOR INPUT OFFSET VOLTAGE (mv) R S = Ω I E =ma I E =ma I E =.ma NOISE FIGURE (db) f =.khz f = khz f = khz FIGURE7. TYPICALINPUTOFFSETVOLTAGECHARACTERISTICS FOR DIFFERENTIAL PAIR AND PAIRED ISOLATED TRANSISTORS vs TEMPERATURE... FIGURE 8. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT R S = Ω R S = Ω NOISE FIGURE (db) f = khz f = khz f =.khz NOISE FIGURE (db) f = khz f = khz f =.khz.. FIGURE 9. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT.. FIGURE. TYPICAL NOISE FIGURE vs COLLECTOR CURRENT

5 CA Typical Performance Curves (Continued) NORMALIZED h PARAMETERS. f = khz h RE h IE h FE = h IE =.kω h RE =.88x - h OE =.µs AT ma h RE h OE h FE h IE.... FORWARD TRANSFER CONDUCTANCE (g FE ) OR SUSCEPTANCE (b FE )(ms),,i C =ma g FE - b FE -. FIGURE. TYPICAL NORMALIZED FORWARD CURRENT TRANSFER RATIO, SHORT CIRCUIT INPUT IMPEDANCE, OPEN CIRCUIT OUTPUT IMPEDANCE, AND OPEN CIRCUIT REVERSE VOLTAGE TRANSFER RATIO vs COLLECTOR CURRENT FIGURE. TYPICAL FORWARD TRANSFER ADMITTANCE vs FREQUENCY INPUT CONDUCTANCE (g IE ) OR SUSCEPTANCE (b IE )(ms),,i C =ma b IE g IE. OUTPUT CONDUCTANCE (g OE ) OR SUSCEPTANCE (b OE )(ms),,i C =ma b OE g OE. FIGURE. TYPICAL INPUT ADMITTANCE vs FREQUENCY FIGURE. TYPICAL OUTPUT ADMITTANCE vs FREQUENCY REVERSE TRANSFER CONDUCTANCE (g RE ) OR SUSCEPTANCE (b RE )(ms) ,,I C =ma g RE IS SMALL AT FREQUENCIES LESS THAN MHz b RE -. GAIN BANDWIDTH PRODUCT (MHz) FIGURE. TYPICAL REVERSE TRANSFER ADMITTANCE vs FREQUENCY FIGURE. TYPICAL GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT

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