Basic digital logic functions and gates

Size: px
Start display at page:

Download "Basic digital logic functions and gates"

Transcription

1 Basic digital logic functions and gates Digital logic functions and gates are the main blocks behind digital logic design. s and 1s combine to produce values that are generated by basic gates such as NOT, NAND and NOR. The NOT gate is often called inverter. NOT, NAND and NOR functions represent the fundamental operations in digital logic 1. A set of so-called truth tables is necessary to illustrate them. Basic digital logic functions A and B are two independent inputs. When they combine, each function produces a specific outcome. NOT flips the value of an input, NAND produces a when both inputs are 1 and NOR produces a 1 when both inputs are. The gates that follow are implemented with CMOS technology. The expressions for NOT, NAND and NOR are A, A B and A B respectively. NOT inverts A. NAND inverts the multiplication of A and B. NOR inverts the summation of A and B. The bar on top of each expression indicates the inversion and it has the lowest priority in the operation. A function is uniquely defined although there could be several implementations. A schematic is used to show the physical implementation of a specific function. A symbol is uniquely associated to each function. A set of waveforms is generated to verify the correct logic has been obtained. A layout can be produced for circuit fabrication of the specific function. Except for the inverter, the gates that follow have only two inputs. More inputs can be available. However, a gate with a higher number of inputs has more capacitance and therefore lower speed. Therefore, it is important to keep the number of gate inputs low. 1 This is also true for CMOS since NAND and NOR have less hardware than AND and OR. 1

2 NOT The NOT function has the following truth table: The schematic for the NOT gate is: NOT function 1 5dc M2 OFFTIME = 1nS ONTIME = 1nS CLK DELAY = STARTL = 1 OPPL = M1 IRFP9141 IRFP253 NOT schematic Two MOSFETS are stacked on top of each other. The PMOS is at the top and the NMOS is at the bottom. The body of the PMOS is connected to DD and the body of the NMOS is connected to GND (this is a common design solution that attempts to reduce recombination within the substrates of the devices). 2

3 The symbol for the NOT gate is: 1 2 NOT symbol The symbol looks like a triangle with a bubble in front of it. The circle is there to point out that the block performs inversion at the output. The waveforms for the NOT gate are: s 2ns 4ns 6ns 8ns 1ns 12ns 14ns 16ns 18ns 2ns (:1) (M1:d) Time NOT waveforms The transient response for the inverter shows what the circuit produces when it is excited by a voltage source. On the left, when the input is low, the output is high. On the right, when the input is high, the output is low. The transistors have the following characteristics: W p =1µ, L p =2µ, tpo =-.7, C bdp =2.293pF, C gspo =818.1pF, C gdpo =511.3pF W n =1µ, L n =2µ, tno =+.7, C bdn =4.368pF, C gsno =1.329pF, C gdno =496pF 3

4 The layout for the NOT gate is shown below: NOT layout The layout for the inverter consists of a PMOS (upper right), an NMOS (lower right), DD (upper rail), GND (lower rail), ptap (upper left), ntap (lower left), metal1 lines (blue) and polysilicon (red). The input is the polysilicon (gates of NMOS and PMOS). The output is the vertical metal1 line (connection between drain of NMOS and source of PMOS). A low voltage at the input turns off the NMOS and turns on the PMOS. In this condition, the PMOS passes a high voltage to the output. This is how voltage is inverted and this is why the above circuit is called an inverter. Note: the NOT gate consists of only 2 transistors. 4

5 NAND The NAND function has the following truth table: The schematic for the NAND gate is: NAND function 1 5dc M3 M4 IRFP9141 IRFP9141 M1 IRFP253 OFFTIME = 1nS ONTIME = 1nS CLK DELAY = STARTL = 1 OPPL = M2 IRFP253 OFFTIME = 2nS ONTIME = 2nS CLK DELAY = STARTL = 1 OPPL = NAND schematic The circuit can be split in two sections. The bottom section consists of two NMOS transistors which are stacked on top of each other. The top section consists of two PMOS transistors which are placed in parallel. 5

6 The symbol for the NAND gate is: NAND symbol The symbol looks like a bell with a circle in front of it. The circle is there to point out that the block performs inversion at the output. The waveforms for the NAND gate are: () () 2.5 SEL>> s 5ns 1ns 15ns 2ns 25ns 3ns 35ns 4ns (M4:d) Time NAND waveforms The transient response for the NAND shows what the circuit produces when it is excited by a voltage source., 1, 1 and 11 inputs will produce 1, 1, 1 and outputs respectively. The transistors have the following characteristics: W p =1µ, L p =2µ, tpo =-.7, C bdp =2.293pF, C gspo =818.1pF, C gdpo =511.3pF W n =1µ, L n =2µ, tno =+.7, C bdn =4.368pF, C gsno =1.329pF, C gdno =496pF 6

7 The layout for the NAND gate is shown below: NAND layout The layout for the NAND gate consists of two PMOS transistors (upper right), two NMOS transistors (lower right), DD (upper rail), GND (lower rail), ptap (upper left), ntap (lower left), metal1 lines (blue) and polysilicon (red). The inputs are the polysilicon lines (gates of NMOS and PMOS transistors). The output is the metal1 line that starts in the middle of the PMOS region and ends on the right of the NMOS region (connection between drain of the top NMOS and sources of the PMOS transistors). The PMOS transistors are effectively in parallel (the drains overlap and the sources are connected to DD). The NMOS transistors are placed in series (the source of the top NMOS overlaps with the drain of the bottom NMOS). Overlapping of transistors is done to reduce space and capacitance. Note: the NAND gate consists of 4 transistors. 7

8 NOR The NOR function has the following truth table: The schematic for the NOR gate is: NOR function 1 5dc M3 IRFP9141 OFFTIME = 1nS ONTIME = 1nS CLK DELAY = STARTL = 1 OPPL = OFFTIME = 2nS ONTIME = 2nS CLK DELAY = STARTL = 1 OPPL = M4 IRFP9141 M1 M2 IRFP253 IRFP253 NOR schematic The circuit can be split in two sections. The top section consists of two PMOS transistors which are stacked on top of each other. The bottom section consists of two NMOS transistors which are placed in parallel. 8

9 The symbol for the NOR gate is: NOR symbol The symbol looks similar to a bell with a circle in front of it. The circle is there to point out that the block performs inversion at the output. The waveforms for the NOR gate are: () () 2.5 SEL>> s 5ns 1ns 15ns 2ns 25ns 3ns 35ns 4ns (M1:d) Time NOR waveforms The transient response for the NOR shows what the circuit produces when it is excited by a voltage source., 1, 1 and 11 inputs will produce 1,, and outputs respectively. The transistors have the following characteristics: W p =1µ, L p =2µ, tpo =-.7, C bdp =2.293pF, C gspo =818.1pF, C gdpo =511.3pF W n =1µ, L n =2µ, tno =+.7, C bdn =4.368pF, C gsno =1.329pF, C gdno =496pF 9

10 The layout for the NOR gate is shown below: NOR layout The layout for the NOR gate consists of two PMOS transistors (upper right), two NMOS transistors (lower right), DD (upper rail), GND (lower rail), ptap (upper left), ntap (lower left), metal1 lines (blue) and polysilicon (red). The inputs are the polysilicon lines (gates of NMOS and PMOS transistors). The output is the metal1 line that starts on the right of the PMOS region and ends in the middle of the NMOS region (connection between drains of NMOS transistor and the source of the bottom PMOS transistors). The NMOS transistors are effectively in parallel (the drains overlap and the sources are connected to GND). The PMOS transistors are placed in series (the drain of the top PMOS overlaps with the source the bottom PMOS). Overlapping of transistors is done to reduce space and capacitance. Note: the NOR gate consists of 4 transistors. 1

ECE380 Digital Logic. Logic values as voltage levels

ECE380 Digital Logic. Logic values as voltage levels ECE380 Digital Logic Implementation Technology: NMOS and PMOS Transistors, CMOS logic gates Dr. D. J. Jackson Lecture 13-1 Logic values as voltage levels V ss is the minimum voltage that can exist in the

More information

ECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits

ECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits Faculty of Engineering ECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits CMOS Technology Complementary MOS, or CMOS, needs both PMOS and NMOS FET devices for their logic gates to be realized

More information

1. Short answer questions. (30) a. What impact does increasing the length of a transistor have on power and delay? Why? (6)

1. Short answer questions. (30) a. What impact does increasing the length of a transistor have on power and delay? Why? (6) CSE 493/593 Test 2 Fall 2011 Solution 1. Short answer questions. (30) a. What impact does increasing the length of a transistor have on power and delay? Why? (6) Decreasing of W to make the gate slower,

More information

ECE/CoE 0132: FETs and Gates

ECE/CoE 0132: FETs and Gates ECE/CoE 0132: FETs and Gates Kartik Mohanram September 6, 2017 1 Physical properties of gates Over the next 2 lectures, we will discuss some of the physical characteristics of integrated circuits. We will

More information

CMOS Digital Logic Design with Verilog. Chapter1 Digital IC Design &Technology

CMOS Digital Logic Design with Verilog. Chapter1 Digital IC Design &Technology CMOS Digital Logic Design with Verilog Chapter1 Digital IC Design &Technology Chapter Overview: In this chapter we study the concept of digital hardware design & technology. This chapter deals the standard

More information

Design cycle for MEMS

Design cycle for MEMS Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor

More information

1. What is the major problem associated with cascading pass transistor logic gates?

1. What is the major problem associated with cascading pass transistor logic gates? EE 434 Exam 2 Fall 2003 Name Instructions. Students may bring 4 pages of notes to this exam. There are 9 questions. The first 8 are worth 2 points each and question 9 is worth 4 points. There are 6 problems.

More information

Shorthand Notation for NMOS and PMOS Transistors

Shorthand Notation for NMOS and PMOS Transistors Shorthand Notation for NMOS and PMOS Transistors Terminal Voltages Mode of operation depends on V g, V d, V s V gs = V g V s V gd = V g V d V ds = V d V s = V gs - V gd Source and drain are symmetric diffusion

More information

Lecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1

Lecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1 Lecture 16 Complementary metal oxide semiconductor (CMOS) CMOS 1-1 Outline Complementary metal oxide semiconductor (CMOS) Inverting circuit Properties Operating points Propagation delay Power dissipation

More information

CHAPTER 3 PERFORMANCE OF A TWO INPUT NAND GATE USING SUBTHRESHOLD LEAKAGE CONTROL TECHNIQUES

CHAPTER 3 PERFORMANCE OF A TWO INPUT NAND GATE USING SUBTHRESHOLD LEAKAGE CONTROL TECHNIQUES CHAPTER 3 PERFORMANCE OF A TWO INPUT NAND GATE USING SUBTHRESHOLD LEAKAGE CONTROL TECHNIQUES 41 In this chapter, performance characteristics of a two input NAND gate using existing subthreshold leakage

More information

EE584 Introduction to VLSI Design Final Project Document Group 9 Ring Oscillator with Frequency selector

EE584 Introduction to VLSI Design Final Project Document Group 9 Ring Oscillator with Frequency selector EE584 Introduction to VLSI Design Final Project Document Group 9 Ring Oscillator with Frequency selector Group Members Uttam Kumar Boda Rajesh Tenukuntla Mohammad M Iftakhar Srikanth Yanamanagandla 1 Table

More information

8. Combinational MOS Logic Circuits

8. Combinational MOS Logic Circuits 8. Combinational MOS Introduction Combinational logic circuits, or gates, witch perform Boolean operations on multiple input variables and determine the output as Boolean functions of the inputs, are the

More information

CMOS Inverter & Ring Oscillator

CMOS Inverter & Ring Oscillator CMOS Inverter & Ring Oscillator Theory: In this Lab we will implement a CMOS inverter and then use it as a building block for a Ring Oscillator. MOSfets (Metal Oxide Semiconductor Field Effect Transistors)

More information

CPE/EE 427, CPE 527 VLSI Design I: Homeworks 3 & 4

CPE/EE 427, CPE 527 VLSI Design I: Homeworks 3 & 4 CPE/EE 427, CPE 527 VLSI Design I: Homeworks 3 & 4 1 2 3 4 5 6 7 8 9 10 Sum 30 10 25 10 30 40 10 15 15 15 200 1. (30 points) Misc, Short questions (a) (2 points) Postponing the introduction of signals

More information

Note that none of the above MAY be a VALID ANSWER.

Note that none of the above MAY be a VALID ANSWER. ECE 270 Learning Outcome 1-1 - Practice Exam / Solution LEARNING OUTCOME #1: an ability to analyze and design CMOS logic gates. Multiple Choice select the single most appropriate response for each question.

More information

Engr354: Digital Logic Circuits

Engr354: Digital Logic Circuits Engr354: Digital Logic Circuits Chapter 3: Implementation Technology Curtis Nelson Chapter 3 Overview In this chapter you will learn about: How transistors are used as switches; Integrated circuit technology;

More information

Chapter 6 DIFFERENT TYPES OF LOGIC GATES

Chapter 6 DIFFERENT TYPES OF LOGIC GATES Chapter 6 DIFFERENT TYPES OF LOGIC GATES Lesson 9 CMOS gates Ch06L9-"Digital Principles and Design", Raj Kamal, Pearson Education, 2006 2 Outline CMOS (n-channel based MOSFETs based circuit) CMOS Features

More information

Basic Fabrication Steps

Basic Fabrication Steps Basic Fabrication Steps and Layout Somayyeh Koohi Department of Computer Engineering Adapted with modifications from lecture notes prepared by author Outline Fabrication steps Transistor structures Transistor

More information

Jack Keil Wolf Lecture. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Lecture Outline. MOSFET N-Type, P-Type.

Jack Keil Wolf Lecture. ESE 570: Digital Integrated Circuits and VLSI Fundamentals. Lecture Outline. MOSFET N-Type, P-Type. ESE 570: Digital Integrated Circuits and VLSI Fundamentals Jack Keil Wolf Lecture Lec 3: January 24, 2019 MOS Fabrication pt. 2: Design Rules and Layout http://www.ese.upenn.edu/about-ese/events/wolf.php

More information

CS/ECE 5710/6710. Composite Layout

CS/ECE 5710/6710. Composite Layout CS/ECE 5710/6710 Introduction to Layout Inverter Layout Example Layout Design Rules Composite Layout Drawing the mask layers that will be used by the fabrication folks to make the devices Very different

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 24, 2019 MOS Fabrication pt. 2: Design Rules and Layout Penn ESE 570 Spring 2019 Khanna Jack Keil Wolf Lecture http://www.ese.upenn.edu/about-ese/events/wolf.php

More information

problem grade total

problem grade total Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo Name: Recitation: November 16, 2005 Quiz #2 problem grade 1 2 3 4 total General guidelines (please read carefully before starting):

More information

2009 Spring CS211 Digital Systems & Lab 1 CHAPTER 3: TECHNOLOGY (PART 2)

2009 Spring CS211 Digital Systems & Lab 1 CHAPTER 3: TECHNOLOGY (PART 2) 1 CHAPTER 3: IMPLEMENTATION TECHNOLOGY (PART 2) Whatwillwelearninthischapter? we learn in this 2 How transistors operate and form simple switches CMOS logic gates IC technology FPGAs and other PLDs Basic

More information

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage

More information

CHAPTER 6 PHASE LOCKED LOOP ARCHITECTURE FOR ADC

CHAPTER 6 PHASE LOCKED LOOP ARCHITECTURE FOR ADC 138 CHAPTER 6 PHASE LOCKED LOOP ARCHITECTURE FOR ADC 6.1 INTRODUCTION The Clock generator is a circuit that produces the timing or the clock signal for the operation in sequential circuits. The circuit

More information

+1 (479)

+1 (479) Introduction to VLSI Design http://csce.uark.edu +1 (479) 575-6043 yrpeng@uark.edu Invention of the Transistor Vacuum tubes ruled in first half of 20th century Large, expensive, power-hungry, unreliable

More information

Place answers on the supplied BUBBLE SHEET only nothing written here will be graded.

Place answers on the supplied BUBBLE SHEET only nothing written here will be graded. ECE 270 Learning Outcome 1-1 - Practice Exam B OUTCOME #1: an ability to analyze and design CMOS logic gates. Multiple Choice select the single most appropriate response for each question. Note that none

More information

ECE 2300 Digital Logic & Computer Organization

ECE 2300 Digital Logic & Computer Organization ECE 2300 Digital Logic & Computer Organization Spring 2018 CMOS Logic Lecture 4: 1 NAND Logic Gate X Y (X Y) = NAND Using De Morgan s Law: (X Y) = X +Y X X X +Y = Y Y Also a NAND We can build circuits

More information

Chapter 6 DIFFERENT TYPES OF LOGIC GATES

Chapter 6 DIFFERENT TYPES OF LOGIC GATES Chapter 6 DIFFERENT TYPES OF LOGIC GATES Lesson 8 NMOS gates Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education, 2006 2 Outline NMOS (n-channel based MOSFETs based circuit) NMOS Features

More information

Topic 3. CMOS Fabrication Process

Topic 3. CMOS Fabrication Process Topic 3 CMOS Fabrication Process Peter Cheung Department of Electrical & Electronic Engineering Imperial College London URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk Lecture 3-1 Layout of a Inverter

More information

Introduction to Electronic Devices

Introduction to Electronic Devices Introduction to Electronic Devices (Course Number 300331) Fall 2006 Dr. Dietmar Knipp Assistant Professor of Electrical Engineering Information: http://www.faculty.iubremen.de/dknipp/ Source: Apple Ref.:

More information

! Review: MOS IV Curves and Switch Model. ! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. !

! Review: MOS IV Curves and Switch Model. ! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. ! ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 21, 2016 MOS Fabrication pt. 2: Design Rules and Layout Lecture Outline! Review: MOS IV Curves and Switch Model! MOS Device Layout!

More information

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

ESE 570: Digital Integrated Circuits and VLSI Fundamentals ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 21, 2016 MOS Fabrication pt. 2: Design Rules and Layout Penn ESE 570 Spring 2016 Khanna Adapted from GATech ESE3060 Slides Lecture

More information

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor

More information

Layout of a Inverter. Topic 3. CMOS Fabrication Process. The CMOS Process - photolithography (2) The CMOS Process - photolithography (1) v o.

Layout of a Inverter. Topic 3. CMOS Fabrication Process. The CMOS Process - photolithography (2) The CMOS Process - photolithography (1) v o. Layout of a Inverter Topic 3 CMOS Fabrication Process V DD Q p Peter Cheung Department of Electrical & Electronic Engineering Imperial College London v i v o Q n URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk

More information

Topic 6. CMOS Static & Dynamic Logic Gates. Static CMOS Circuit. NMOS Transistors in Series/Parallel Connection

Topic 6. CMOS Static & Dynamic Logic Gates. Static CMOS Circuit. NMOS Transistors in Series/Parallel Connection NMOS Transistors in Series/Parallel Connection Topic 6 CMOS Static & Dynamic Logic Gates Peter Cheung Department of Electrical & Electronic Engineering Imperial College London Transistors can be thought

More information

Lecture 0: Introduction

Lecture 0: Introduction Lecture 0: Introduction Introduction Integrated circuits: many transistors on one chip. Very Large Scale Integration (VLSI): bucketloads! Complementary Metal Oxide Semiconductor Fast, cheap, low power

More information

PHYSICAL STRUCTURE OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag

PHYSICAL STRUCTURE OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag PHYSICAL STRUCTURE OF CMOS INTEGRATED CIRCUITS Dr. Mohammed M. Farag Outline Integrated Circuit Layers MOSFETs CMOS Layers Designing FET Arrays EE 432 VLSI Modeling and Design 2 Integrated Circuit Layers

More information

! Review: MOS IV Curves and Switch Model. ! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. !

! Review: MOS IV Curves and Switch Model. ! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. ! ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 3: January 21, 2017 MOS Fabrication pt. 2: Design Rules and Layout Lecture Outline! Review: MOS IV Curves and Switch Model! MOS Device Layout!

More information

Microelectronics, BSc course

Microelectronics, BSc course Microelectronics, BSc course MOS circuits: CMOS circuits, construction http://www.eet.bme.hu/~poppe/miel/en/14-cmos.pptx http://www.eet.bme.hu The abstraction level of our study: SYSTEM + MODULE GATE CIRCUIT

More information

Electronic Circuits EE359A

Electronic Circuits EE359A Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 1 Memory and Advanced Digital Circuits - 2 Chapter 11 2 Figure 11.1 (a) Basic latch. (b) The latch with the feedback loop opened.

More information

CMOS Digital Integrated Circuits Lec 11 Sequential CMOS Logic Circuits

CMOS Digital Integrated Circuits Lec 11 Sequential CMOS Logic Circuits Lec Sequential CMOS Logic Circuits Sequential Logic In Combinational Logic circuit Out Memory Sequential The output is determined by Current inputs Previous inputs Output = f(in, Previous In) The regenerative

More information

FUNDAMENTALS OF MODERN VLSI DEVICES

FUNDAMENTALS OF MODERN VLSI DEVICES 19-13- FUNDAMENTALS OF MODERN VLSI DEVICES YUAN TAUR TAK H. MING CAMBRIDGE UNIVERSITY PRESS Physical Constants and Unit Conversions List of Symbols Preface page xi xiii xxi 1 INTRODUCTION I 1.1 Evolution

More information

NOVEMBER 28, 2016 COURSE PROJECT: CMOS SWITCHING POWER SUPPLY EE 421 DIGITAL ELECTRONICS ERIC MONAHAN

NOVEMBER 28, 2016 COURSE PROJECT: CMOS SWITCHING POWER SUPPLY EE 421 DIGITAL ELECTRONICS ERIC MONAHAN NOVEMBER 28, 2016 COURSE PROJECT: CMOS SWITCHING POWER SUPPLY EE 421 DIGITAL ELECTRONICS ERIC MONAHAN 1.Introduction: CMOS Switching Power Supply The course design project for EE 421 Digital Engineering

More information

Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor

Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,

More information

Topic 2. Basic MOS theory & SPICE simulation

Topic 2. Basic MOS theory & SPICE simulation Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris, Ch 2 & 5.1-5.3 Rabaey, Ch 3) URL: www.ee.ic.ac.uk/pcheung/

More information

Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor

Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,

More information

Digital Systems Laboratory

Digital Systems Laboratory 2012 Fall CSE140L Digital Systems Laboratory Lecture #2 by Dr. Choon Kim CSE Department, UCSD chk034@eng.ucsd.edu Lecture #2 1 Digital Technologies CPU(Central Processing Unit) GPU(Graphics Processing

More information

IC Layout Design of 4-bit Universal Shift Register using Electric VLSI Design System

IC Layout Design of 4-bit Universal Shift Register using Electric VLSI Design System IC Layout Design of 4-bit Universal Shift Register using Electric VLSI Design System 1 Raj Kumar Mistri, 2 Rahul Ranjan, 1,2 Assistant Professor, RTC Institute of Technology, Anandi, Ranchi, Jharkhand,

More information

EEC 118 Lecture #12: Dynamic Logic

EEC 118 Lecture #12: Dynamic Logic EEC 118 Lecture #12: Dynamic Logic Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation Outline Today: Alternative MOS Logic Styles Dynamic MOS Logic Circuits: Rabaey

More information

Lecture 0: Introduction

Lecture 0: Introduction Introduction to CMOS VLSI Design Lecture : Introduction David Harris Steven Levitan Harvey Mudd College University of Pittsburgh Spring 24 Fall 28 Administrivia Professor Steven Levitan TA: Bo Zhao Syllabus

More information

444 Index. F Fermi potential, 146 FGMOS transistor, 20 23, 57, 83, 84, 98, 205, 208, 213, 215, 216, 241, 242, 251, 280, 311, 318, 332, 354, 407

444 Index. F Fermi potential, 146 FGMOS transistor, 20 23, 57, 83, 84, 98, 205, 208, 213, 215, 216, 241, 242, 251, 280, 311, 318, 332, 354, 407 Index A Accuracy active resistor structures, 46, 323, 328, 329, 341, 344, 360 computational circuits, 171 differential amplifiers, 30, 31 exponential circuits, 285, 291, 292 multifunctional structures,

More information

CHAPTER 3 NEW SLEEPY- PASS GATE

CHAPTER 3 NEW SLEEPY- PASS GATE 56 CHAPTER 3 NEW SLEEPY- PASS GATE 3.1 INTRODUCTION A circuit level design technique is presented in this chapter to reduce the overall leakage power in conventional CMOS cells. The new leakage po leepy-

More information

INTRODUCTION TO MOS TECHNOLOGY

INTRODUCTION TO MOS TECHNOLOGY INTRODUCTION TO MOS TECHNOLOGY 1. The MOS transistor The most basic element in the design of a large scale integrated circuit is the transistor. For the processes we will discuss, the type of transistor

More information

420 Intro to VLSI Design

420 Intro to VLSI Design Dept of Electrical and Computer Engineering 420 Intro to VLSI Design Lecture 0: Course Introduction and Overview Valencia M. Joyner Spring 2005 Getting Started Syllabus About the Instructor Labs, Problem

More information

ENG2410 Digital Design CMOS Technology. Fall 2017 S. Areibi School of Engineering University of Guelph

ENG2410 Digital Design CMOS Technology. Fall 2017 S. Areibi School of Engineering University of Guelph ENG2410 Digital Design CMOS Technology Fall 2017 S. reibi School of Engineering University of Guelph The Transistor Revolution First transistor Bell Labs, 1948 Bipolar logic 1960 s Intel 4004 processor

More information

Computer Architecture (TT 2012)

Computer Architecture (TT 2012) Computer Architecture (TT 212) Laws of Attraction aniel Kroening Oxford University, Computer Science epartment Version 1., 212 . Kroening: Computer Architecture (TT 212) 2 . Kroening: Computer Architecture

More information

Exam 1 ECE 410 Fall 2002

Exam 1 ECE 410 Fall 2002 NAME: Exa 1 ECE 410 Fall 2002 During this exa you are allowed to use a calculator and the equations sheet provided. You are not allowed to speak to or exchange books, papers, calculators, etc. with other

More information

EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng

EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng EE4800 CMOS Digital IC Design & Analysis Lecture 1 Introduction Zhuo Feng 1.1 Prof. Zhuo Feng Office: EERC 730 Phone: 487-3116 Email: zhuofeng@mtu.edu Class Website http://www.ece.mtu.edu/~zhuofeng/ee4800fall2010.html

More information

The Effect of Threshold Voltages on the Soft Error Rate. - V Degalahal, N Rajaram, N Vijaykrishnan, Y Xie, MJ Irwin

The Effect of Threshold Voltages on the Soft Error Rate. - V Degalahal, N Rajaram, N Vijaykrishnan, Y Xie, MJ Irwin The Effect of Threshold Voltages on the Soft Error Rate - V Degalahal, N Rajaram, N Vijaykrishnan, Y Xie, MJ Irwin Outline Introduction Soft Errors High Threshold ( V t ) Charge Creation Logic Attenuation

More information

ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices

ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices Christopher Batten School of Electrical and Computer Engineering Cornell University http://www.csl.cornell.edu/courses/ece5950 Simple Transistor

More information

Computer-Based Project on VLSI Design Co 3/7

Computer-Based Project on VLSI Design Co 3/7 Computer-Based Project on VLSI Design Co 3/7 Electrical Characterisation of CMOS Ring Oscillator This pamphlet describes a laboratory activity based on an integrated circuit originally designed and tested

More information

DESIGN OF 16 TO 1 MULTIPLEXER IC USING HIGH SPEED CMOS TECHNOLOGY

DESIGN OF 16 TO 1 MULTIPLEXER IC USING HIGH SPEED CMOS TECHNOLOGY DESIGN OF 16 TO 1 MUTIPEXER IC USING IG SPEED CMOS TECNOOGY Eka Maulana a, M Julius St b, R Arief Setyawan c, Ceri A d, Tito Panca N e, abc ecturer, Department of Electrical Engineering, Brawijaya University,

More information

Digital Design and System Implementation. Overview of Physical Implementations

Digital Design and System Implementation. Overview of Physical Implementations Digital Design and System Implementation Overview of Physical Implementations CMOS devices CMOS transistor circuit functional behavior Basic logic gates Transmission gates Tri-state buffers Flip-flops

More information

Lecture 2: Digital Logic Basis

Lecture 2: Digital Logic Basis Lecture 2: Digital Logic Basis Xufeng Kou School of Information Science and Technology ShanghaiTech University 1 Outline Truth Table Basic Logic Operation and Gates Logic Circuits NOR Gates and NAND Gates

More information

Computer-Based Project on VLSI Design Co 3/8

Computer-Based Project on VLSI Design Co 3/8 Computer-Based Project on VLSI Design Co 3/8 This pamphlet describes a laboratory activity based on a former third year EIST experiment. Its purpose is the measurement of the switching speed of some CMOS

More information

ECE520 VLSI Design. Lecture 5: Basic CMOS Inverter. Payman Zarkesh-Ha

ECE520 VLSI Design. Lecture 5: Basic CMOS Inverter. Payman Zarkesh-Ha ECE520 VLSI Design Lecture 5: Basic CMOS Inverter Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture

More information

Digital Electronics Part II - Circuits

Digital Electronics Part II - Circuits Digital Electronics Part II - Circuits Dr. I. J. Wassell Gates from Transistors 1 Introduction Logic circuits are non-linear, consequently we will introduce a graphical technique for analysing such circuits

More information

Chapter 3 DESIGN OF ADIABATIC CIRCUIT. 3.1 Introduction

Chapter 3 DESIGN OF ADIABATIC CIRCUIT. 3.1 Introduction Chapter 3 DESIGN OF ADIABATIC CIRCUIT 3.1 Introduction The details of the initial experimental work carried out to understand the energy recovery adiabatic principle are presented in this section. This

More information

! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. ! Standard Cells. ! CMOS Process Enhancements

! MOS Device Layout. ! Inverter Layout. ! Gate Layout and Stick Diagrams. ! Design Rules. ! Standard Cells. ! CMOS Process Enhancements EE 570: igital Integrated Circuits and VLI Fundamentals Lec 3: January 18, 2018 MO Fabrication pt. 2: esign Rules and Layout Lecture Outline! MO evice Layout! Inverter Layout! Gate Layout and tick iagrams!

More information

Practical Aspects Of Logic Gates

Practical Aspects Of Logic Gates Practical Aspects Of Logic Gates Introduction & Objectives Logic gates are physically implemented as Integrated Circuits (IC). Integrated circuits are implemented in several technologies. Two landmark

More information

Learning Outcomes. Spiral 2 8. Digital Design Overview LAYOUT

Learning Outcomes. Spiral 2 8. Digital Design Overview LAYOUT 2-8.1 2-8.2 Spiral 2 8 Cell Mark Redekopp earning Outcomes I understand how a digital circuit is composed of layers of materials forming transistors and wires I understand how each layer is expressed as

More information

Digital Integrated Circuits - Logic Families (Part II)

Digital Integrated Circuits - Logic Families (Part II) Digital Integrated Circuits - Logic Families (Part II) MOSFET Logic Circuits MOSFETs are unipolar devices. They are simple, small in size, inexpensive to fabricate and consume less power. MOS fabrication

More information

C H A P T E R 5. Amplifier Design

C H A P T E R 5. Amplifier Design C H A P T E 5 Amplifier Design The Common-Source Amplifier v 0 = r ( g mvgs )( D 0 ) A v0 = g m r ( D 0 ) Performing the analysis directly on the circuit diagram with the MOSFET model used implicitly.

More information

Layout - Line of Diffusion. Where are we? Line of Diffusion in General. Line of Diffusion in General. Stick Diagrams. Line of Diffusion in General

Layout - Line of Diffusion. Where are we? Line of Diffusion in General. Line of Diffusion in General. Stick Diagrams. Line of Diffusion in General Where are we? Lots of Layout issues Line of diffusion style Power pitch it-slice pitch Routing strategies Transistor sizing Wire sizing Layout - Line of Diffusion Very common layout method Start with a

More information

Design and Implementation of Digital CMOS VLSI Circuits Using Dual Sub-Threshold Supply Voltages

Design and Implementation of Digital CMOS VLSI Circuits Using Dual Sub-Threshold Supply Voltages RESEARCH ARTICLE OPEN ACCESS Design and Implementation of Digital CMOS VLSI Circuits Using Dual Sub-Threshold Supply Voltages A. Suvir Vikram *, Mrs. K. Srilakshmi ** And Mrs. Y. Syamala *** * M.Tech,

More information

STATIC POWER OPTIMIZATION USING DUAL SUB-THRESHOLD SUPPLY VOLTAGES IN DIGITAL CMOS VLSI CIRCUITS

STATIC POWER OPTIMIZATION USING DUAL SUB-THRESHOLD SUPPLY VOLTAGES IN DIGITAL CMOS VLSI CIRCUITS STATIC POWER OPTIMIZATION USING DUAL SUB-THRESHOLD SUPPLY VOLTAGES IN DIGITAL CMOS VLSI CIRCUITS Mrs. K. Srilakshmi 1, Mrs. Y. Syamala 2 and A. Suvir Vikram 3 1 Department of Electronics and Communication

More information

Lecture 11 Circuits numériques (I) L'inverseur

Lecture 11 Circuits numériques (I) L'inverseur Lecture 11 Circuits numériques (I) L'inverseur Outline Introduction to digital circuits The inverter NMOS inverter with resistor pull-up 6.12 Spring 24 Lecture 11 1 1. Introduction to digital circuits:

More information

UNIVERSITI MALAYSIA PERLIS

UNIVERSITI MALAYSIA PERLIS UNIVERSITI MALAYSIA PERLIS DIGITAL SYSTEM I (DKT122) LAB 2: LOGIC GATE QUESTION & ANSWER SHEET REPORT MOHAMAD RIZAL BIN ABDUL REJAB SITI ZARINA BINTI MD NAZIRI & SPECIAL THANKS TO : ZULKIFLI HUSIN MOHAMMAD

More information

CMOS VLSI Design (A3425)

CMOS VLSI Design (A3425) CMOS VLSI Design (A3425) Unit III Static Logic Gates Introduction A static logic gate is one that has a well defined output once the inputs are stabilized and the switching transients have decayed away.

More information

CMOS synchronous Buck switching power supply Raheel Sadiq November 28, 2016

CMOS synchronous Buck switching power supply Raheel Sadiq November 28, 2016 CMOS synchronous Buck switching power supply Raheel Sadiq November 28, 2016 Part 1: This part of the project is to lay out a bandgap. We previously built our bandgap in HW #13 which supplied a constant

More information

DIGITAL VLSI LAB ASSIGNMENT 1

DIGITAL VLSI LAB ASSIGNMENT 1 DIGITAL VLSI LAB ASSIGNMENT 1 Problem 1: NMOS and PMOS plots using Cadence. In this exercise, you are required to generate both NMOS and PMOS I-V device characteristics (I/P and O/P) using Cadence (Use

More information

Microelectronics Circuit Analysis and Design

Microelectronics Circuit Analysis and Design Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor Neamen Microelectronics, 4e Chapter 3-1 In this chapter, we will: Study and understand the operation

More information

! Sequential Logic. ! Timing Hazards. ! Dynamic Logic. ! Add state elements (registers, latches) ! Compute. " From state elements

! Sequential Logic. ! Timing Hazards. ! Dynamic Logic. ! Add state elements (registers, latches) ! Compute.  From state elements ESE 570: Digital Integrated Circuits and VLSI Fundamentals Lec 19: April 2, 2019 Sequential Logic, Timing Hazards and Dynamic Logic Lecture Outline! Sequential Logic! Timing Hazards! Dynamic Logic 4 Sequential

More information

UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency

UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency Jamie E. Reinhold December 15, 2011 Abstract The design, simulation and layout of a UMAINE ECE Morse code Read Only Memory and transmitter

More information

Lecture 9: Cell Design Issues

Lecture 9: Cell Design Issues Lecture 9: Cell Design Issues MAH, AEN EE271 Lecture 9 1 Overview Reading W&E 6.3 to 6.3.6 - FPGA, Gate Array, and Std Cell design W&E 5.3 - Cell design Introduction This lecture will look at some of the

More information

MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science

MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science MCHUETT INTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer cience 6.374: nalysis and Design of Digital Integrated Circuits Problem et # 4 s Fall 2003 Issued: 10/31/03 Problem 1: MTCMO

More information

Introduction to CMOS VLSI Design (E158) Lecture 9: Cell Design

Introduction to CMOS VLSI Design (E158) Lecture 9: Cell Design Harris Introduction to CMOS VLSI Design (E158) Lecture 9: Cell Design David Harris Harvey Mudd College David_Harris@hmc.edu Based on EE271 developed by Mark Horowitz, Stanford University MAH E158 Lecture

More information

Low Power Realization of Subthreshold Digital Logic Circuits using Body Bias Technique

Low Power Realization of Subthreshold Digital Logic Circuits using Body Bias Technique Indian Journal of Science and Technology, Vol 9(5), DOI: 1017485/ijst/2016/v9i5/87178, Februaru 2016 ISSN (Print) : 0974-6846 ISSN (Online) : 0974-5645 Low Power Realization of Subthreshold Digital Logic

More information

EMT 251 Introduction to IC Design

EMT 251 Introduction to IC Design EMT 251 Introduction to IC Design (Pengantar Rekabentuk Litar Terkamir) Semester II 2011/2012 Introduction to IC design and Transistor Fundamental Some Keywords! Very-large-scale-integration (VLSI) is

More information

Common-Source Amplifiers

Common-Source Amplifiers Lab 2: Common-Source Amplifiers Introduction The common-source stage is the most basic amplifier stage encountered in CMOS analog circuits. Because of its very high input impedance, moderate-to-high gain,

More information

! Is it feasible? ! How do we decompose the problem? ! Vdd. ! Topology. " Gate choice, logical optimization. " Fanin, fanout, Serial vs.

! Is it feasible? ! How do we decompose the problem? ! Vdd. ! Topology.  Gate choice, logical optimization.  Fanin, fanout, Serial vs. ESE 570: Digital Integrated Circuits and VLSI Fundamentals Design Space Exploration Lec 18: March 28, 2017 Design Space Exploration, Synchronous MOS Logic, Timing Hazards 3 Design Problem Problem Solvable!

More information

Submission date: Wednesday 21/3/2018

Submission date: Wednesday 21/3/2018 Faculty of Information Engineering & Technology Electrical & Electronics Department Course: Microelectronics Lab ELCT605 Spring 2018 Dr. Eman Azab Eng. Samar Shukry Analog Report 1, 2 DC, TRANSIENT, AND

More information

UNIT-III GATE LEVEL DESIGN

UNIT-III GATE LEVEL DESIGN UNIT-III GATE LEVEL DESIGN LOGIC GATES AND OTHER COMPLEX GATES: Invert(nmos, cmos, Bicmos) NAND Gate(nmos, cmos, Bicmos) NOR Gate(nmos, cmos, Bicmos) The module (integrated circuit) is implemented in terms

More information

Propagation Delay, Circuit Timing & Adder Design. ECE 152A Winter 2012

Propagation Delay, Circuit Timing & Adder Design. ECE 152A Winter 2012 Propagation Delay, Circuit Timing & Adder Design ECE 152A Winter 2012 Reading Assignment Brown and Vranesic 2 Introduction to Logic Circuits 2.9 Introduction to CAD Tools 2.9.1 Design Entry 2.9.2 Synthesis

More information

Java Bread Board Introductory Digital Electronics Exercise 2, Page 1

Java Bread Board Introductory Digital Electronics Exercise 2, Page 1 Java Bread Board Introductory Digital Electronics Exercise 2, Page 1 JBB Excercise 2 The aim of this lab is to demonstrate how basic logic gates can be used to implement simple memory functions, introduce

More information

Propagation Delay, Circuit Timing & Adder Design

Propagation Delay, Circuit Timing & Adder Design Propagation Delay, Circuit Timing & Adder Design ECE 152A Winter 2012 Reading Assignment Brown and Vranesic 2 Introduction to Logic Circuits 2.9 Introduction to CAD Tools 2.9.1 Design Entry 2.9.2 Synthesis

More information

Lecture 11 Digital Circuits (I) THE INVERTER

Lecture 11 Digital Circuits (I) THE INVERTER Lecture 11 Digital Circuits (I) THE INVERTER Outline Introduction to digital circuits The inverter NMOS inverter with resistor pull-up Reading Assignment: Howe and Sodini; Chapter 5, Sections 5.1-5.3 6.12

More information

A gate sizing and transistor fingering strategy for

A gate sizing and transistor fingering strategy for LETTER IEICE Electronics Express, Vol.9, No.19, 1550 1555 A gate sizing and transistor fingering strategy for subthreshold CMOS circuits Morteza Nabavi a) and Maitham Shams b) Department of Electronics,

More information

Comparison of 32nm High-k Metal Gate Predictive Technology Model CMOS and MOSFET-Like CNFET compact Model Based Domino logic Circuits

Comparison of 32nm High-k Metal Gate Predictive Technology Model CMOS and MOSFET-Like CNFET compact Model Based Domino logic Circuits Comparison of 32nm High-k Metal Gate Predictive Technology Model CMOS and MOSFET-Like CNFET compact Model Based Domino logic Circuits Saravana Maruthamuthu, Wireless Group Infineon Technologies India Private

More information