Chapter 6 DIFFERENT TYPES OF LOGIC GATES
|
|
- Ashley Clarke
- 5 years ago
- Views:
Transcription
1 Chapter 6 DIFFERENT TYPES OF LOGIC GATES
2 Lesson 8 NMOS gates Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
3 Outline NMOS (n-channel based MOSFETs based circuit) NMOS Features Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
4 Drain Gate G V + DD D V + DD I DS D A F S V SS A V SS n MOS Inverter n-channel Depletion mode as active resistor and enhancement mode output stage MOSFET Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education, S
5 Drain Gate G V + DD D V + DD I DS B F A + B A.B S V SS A V SS n MOS NOR n channel Depletion mode as active resistor and two enhancement mode MOSFETs in parallel Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education, S
6 Drain Gate G V + DD D V + DD I DS B F A. B A +B S V SS A V SS n MOS NAND n channel Depletion mode as active resistor and two enhancement mode MOSFETs in series Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education, S
7 n-channel depletion mode active resistor A depletion mode n-channel MOSFET T acts as an active pull up load (in place of R, which occupies larger silicon area). Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
8 n-channel enhancement mode ON state (Input Logic State 1 Output 0) When V GS >V T GS, a channel is formed between drain and source I D increases and linearly varies with V DS MOSFET ON state. Further, when the V GS increases, the slope of change in I D is steeper and steeper with respect to V DS. Channel resistance decreases steeply with (V GS - V T GS ). MOSFET is said to be in ON state. Channel width is constant is function of (V GS -V T ). GS Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
9 Two enhancement mode MOSFETS in parallel Two enhancement-mode n-channel MOSFETs TA and TB are the logic drivers in parallel. These give an output Vo at F through a common point connected to drains of TA and TB. If both TA and TB are off, the output equals, supply voltage VDD. If any one is ON, the output at F equals the VSS (the supply GND) Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
10 Two enhancement mode MOSFETS in Series Two enhancement mode n-channel MOSFETs T and T are in series. A B These give an output V at F through o the upper NMOS drain of T, which B also connects the NMOS MOSFET pull up. If both TA and T are off, the B output equals, supply voltage V. If DD any one is ON, the output at F equals the V (the supply GND). SS Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
11 Output at F Property of a NAND is that its output is 0 when all the inputs are 1. When two enhancement mode MOSFETs are placed in series, the circuit functions as NAND Property of a NOR is that its output is 1 when all the inputs are 0. When two enhancement mode MOSFETs are placed in parallel, the circuit functions as NOR Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
12 n MOS Outline n MOS Features Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
13 n MOS Voltage Levels (8086) Supply V DD = VV V SS = 0V V OL (Voltage Output at logic 0 ) = 0.45V and I OL = 2mA V OH (Voltage Output at logic 1 ) = 2.4 V and I OH = -400 µa V IL (Voltage Input at logic 0 ) = 0.8V V V IH (Voltage Input at logic 1 ) = 2 V Input Leakage current = +10 µa Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
14 n MOS Voltage Levels Output Leakage current = +10 µa Noise Margin at 1 = 0.4V Noise Margin at 0 = 0.4V Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
15 Power Dissipation 0.2 to 10 mw Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
16 Fan out and Maximum Operation Frequency Fan out 20 Maximum Operation frequency 2 MHz typical (8085) Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
17 Propagation Delay 300 ns in a typical VLSI Let gate-source capacitance = C nf [nf means nanofarad.] If m = 40, the total capacitance being all T j in parallel = 40C. Resistance is very high between gate and source in both logic 0 and logic 1 states. Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
18 Propagation Delay Therefore, MOSFET turn-on delay is large. Now the technology has been developed to get very small C to get the speeds compatible with TTLs Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
19 Summary Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
20 We learnt n MOS inverter circuit n MOS NOR circuit n MOS NAND circuit Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
21 A depletion mode n MOSFET functions as active pull up resistor from supply Inverter uses one n-mosfet as an input Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
22 n MOS gate has each input connection to a gate of n channel enhancement mode MOSFET Two input NOR has two n-mosfets in parallel Two input NAND has two n- MOSFETs in series Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
23 Summary Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
24 End of Lesson 8 n MOS gates Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
25 THANK YOU Ch06L8-"Digital Principles and Design", Raj Kamal, Pearson Education,
Chapter 6 DIFFERENT TYPES OF LOGIC GATES
Chapter 6 DIFFERENT TYPES OF LOGIC GATES Lesson 9 CMOS gates Ch06L9-"Digital Principles and Design", Raj Kamal, Pearson Education, 2006 2 Outline CMOS (n-channel based MOSFETs based circuit) CMOS Features
More informationDigital Electronics Part II - Circuits
Digital Electronics Part II - Circuits Dr. I. J. Wassell Gates from Transistors 1 Introduction Logic circuits are non-linear, consequently we will introduce a graphical technique for analysing such circuits
More informationChapter 6 DIFFERENT TYPES OF LOGIC GATES
Chapter 6 DIFFERENT TYPES OF LOGIC GATES Lesson 3 RTL and DTL Gates Ch06L3-"Digital Principles and Design", Raj Kamal, Pearson Education, 2006 2 Outline Resistor transistor logic (RTL) RTL Circuit Characteristics
More informationPractice Homework Problems for Module 1
Practice Homework Problems for Module 1 1. Unsigned base conversions (LO 1-1). (a) (2C9E) 16 to base 2 (b) (1101001) 2 to base 10 (c) (1101001) 2 to base 16 (d) (8576) 10 to base 16 (e) (A27F) 16 to base
More informationDigital Integrated Circuits - Logic Families (Part II)
Digital Integrated Circuits - Logic Families (Part II) MOSFET Logic Circuits MOSFETs are unipolar devices. They are simple, small in size, inexpensive to fabricate and consume less power. MOS fabrication
More informationECE520 VLSI Design. Lecture 5: Basic CMOS Inverter. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 5: Basic CMOS Inverter Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture
More informationDigital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic.
Digital Electronics Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region Positive Logic Logic 1 Negative Logic Logic 0 Voltage Transition Region Transition
More informationLecture Summary Module 1 Switching Algebra and CMOS Logic Gates
Lecture Summary Module 1 Switching Algebra and CMOS Logic Gates Learning Outcome: an ability to analyze and design CMOS logic gates Learning Objectives: 1-1. convert numbers from one base (radix) to another:
More informationUNISONIC TECHNOLOGIES CO., LTD CD4069
UNISONIC TECHNOLOGIES CO., LTD CD4069 INVERTER CIRCUITS DESCRIPTION The UTC CD4069 consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating
More informationLecture 11 Digital Circuits (I) THE INVERTER
Lecture 11 Digital Circuits (I) THE INVERTER Outline Introduction to digital circuits The inverter NMOS inverter with resistor pull-up Reading Assignment: Howe and Sodini; Chapter 5, Sections 5.1-5.3 6.12
More informationModule-3: Metal Oxide Semiconductor (MOS) & Emitter coupled logic (ECL) families
1 Module-3: Metal Oxide Semiconductor (MOS) & Emitter coupled logic (ECL) families 1. Introduction 2. Metal Oxide Semiconductor (MOS) logic 2.1. Enhancement and depletion mode 2.2. NMOS and PMOS inverter
More informationLecture 11 Circuits numériques (I) L'inverseur
Lecture 11 Circuits numériques (I) L'inverseur Outline Introduction to digital circuits The inverter NMOS inverter with resistor pull-up 6.12 Spring 24 Lecture 11 1 1. Introduction to digital circuits:
More informationQuad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
TECHNICAL DATA Quad 2-Input NAND Gate High-oltage Silicon-Gate CMOS The NAND gates provide the system designer with direct emplementation of the NAND function. Operating oltage Range:.0 to 18 Maximum input
More informationNote that none of the above MAY be a VALID ANSWER.
ECE 270 Learning Outcome 1-1 - Practice Exam / Solution LEARNING OUTCOME #1: an ability to analyze and design CMOS logic gates. Multiple Choice select the single most appropriate response for each question.
More information8. Combinational MOS Logic Circuits
8. Combinational MOS Introduction Combinational logic circuits, or gates, witch perform Boolean operations on multiple input variables and determine the output as Boolean functions of the inputs, are the
More informationECE 301 Digital Electronics
ECE 301 Digital Electronics Constraints in Logic Circuit Design (Lecture #14) The slides included herein were taken from the materials accompanying Fundamentals of Logic Design, 6 th Edition, by Roth and
More informationI. Digital Integrated Circuits - Logic Concepts
I. Digital Integrated Circuits - Logic Concepts. Logic Fundamentals: binary mathematics: only operate on and (oolean algebra) simplest function -- inversion = symbol for the inverter INPUT OUTPUT EECS
More informationDigital logic families
Digital logic families Digital logic families Digital integrated circuits are classified not only by their complexity or logical operation, but also by the specific circuit technology to which they belong.
More informationTopic 6. CMOS Static & Dynamic Logic Gates. Static CMOS Circuit. NMOS Transistors in Series/Parallel Connection
NMOS Transistors in Series/Parallel Connection Topic 6 CMOS Static & Dynamic Logic Gates Peter Cheung Department of Electrical & Electronic Engineering Imperial College London Transistors can be thought
More informationHCF40107B DUAL 2-INPUT NAND BUFFER/DRIVER
DUAL 2-INPUT NAND BUFFER/DRIVER 32 TIMES STANDARD B-SERIES OUTPUT CURRENT DRIVE SINKING CAPABILITY - 136 ma TYP. AT V DD = 10V, V DS = 1V QUIESCENT CURRENT SPECIF. UP TO 20V 5V, 10V AND 15V PARAMETRIC
More informationLecture 12 - Digital Circuits (I) The inverter. October 20, 2005
6.12 - Microelectronic Devices and Circuits - Fall 25 Lecture 12-1 Lecture 12 - Digital Circuits (I) The inverter October 2, 25 Contents: 1. Introduction to digital electronics: the inverter 2. NMOS inverter
More informationIC Logic Families. Wen-Hung Liao, Ph.D. 5/16/2001
IC Logic Families Wen-Hung Liao, Ph.D. 5/16/2001 Digital IC Terminology Voltage Parameters: V IH (min): high-level input voltage, the minimum voltage level required for a logic 1 at an input. V IL (max):
More informationLSI/CSI LS7290 STEPPER MOTOR CONTROLLER. LSI Computer Systems, Inc Walt Whitman Road, Melville, NY (631) FAX (631)
LSI/CSI UL A800 FEATURES: LSI Computer Systems, Inc. 1 Walt Whitman Road, Melville, NY 114 (1) 1-0400 FAX (1) 1-040 STEPPER MOTOR CONTROLLER Controls Bipolar and Unipolar Motors Cost-effective replacement
More informationV OFFSET. Description
Features n Floating channel designed for bootstrap operation Fully operational to +6V Tolerant to negative transient voltage dv/dt immune n Gate drive supply range from 1 to 2V n Undervoltage lockout for
More informationMM74HC00 Quad 2-Input NAND Gate
Quad 2-Input NAND Gate General Description The MM74HC00 NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard
More informationDepletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET
Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage
More informationCD4069, CD4069-SMD Inverter Circuits
CD4069, CD4069-SMD Inverter Circuits General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range,
More informationNJU BIT SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION PACKAGE OUTLINE PIN CONFIGURATION FEATURES BLOCK DIAGRAM
16-BIT SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION The NJU3715 is a 16-bit serial to parallel converter especially applying to MPU outport expander. The effective outport assignment of MPU is available
More informationMM74HC132 Quad 2-Input NAND Schmitt Trigger
Quad 2-Input NAND Schmitt Trigger General Description The MM74HC132 utilizes advanced silicon-gate CMOS technology to achieve the low power dissipation and high noise immunity of standard CMOS, as well
More informationMM74HC132 Quad 2-Input NAND Schmitt Trigger
Quad 2-Input NAND Schmitt Trigger General Description The utilizes advanced silicon-gate CMOS technology to achieve the low power dissipation and high noise immunity of standard CMOS, as well as the capability
More informationCMOS Digital Logic Design with Verilog. Chapter1 Digital IC Design &Technology
CMOS Digital Logic Design with Verilog Chapter1 Digital IC Design &Technology Chapter Overview: In this chapter we study the concept of digital hardware design & technology. This chapter deals the standard
More informationDepartment of EECS. University of California, Berkeley. Logic gates. September 1 st 2001
Department of EECS University of California, Berkeley Logic gates Bharathwaj Muthuswamy and W. G. Oldham September 1 st 2001 1. Introduction This lab introduces digital logic. You use commercially available
More informationECE380 Digital Logic. Logic values as voltage levels
ECE380 Digital Logic Implementation Technology: NMOS and PMOS Transistors, CMOS logic gates Dr. D. J. Jackson Lecture 13-1 Logic values as voltage levels V ss is the minimum voltage that can exist in the
More informationDS75451/2/3 Series Dual Peripheral Drivers
DS75451/2/3 Series Dual Peripheral Drivers General Description The DS7545X series of dual peripheral drivers is a family of versatile devices designed for use in systems that use TTL logic. Typical applications
More informationLow current consumption : 0.4 ma typ. Driver output current : 70 ma max. 5 MHz (cascade connection) Selectable H/L for latch and driver enable
The is a CMOS thermal print head driver containing a 64-bit shift register and a latch. It can be used for general purpose because H or L can be selected for the latch and the driver enable. It is ideal
More informationTC74AC05P,TC74AC05F,TC74AC05FN
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC05P/F/FN TC74AC05P,TC74AC05F,TC74AC05FN Hex Inverter (open drain) The TC74AC05 is an advanced high speed CMOS INVERTER fabricated with silicon
More informationM74HCT04. Hex inverter. Features. Description
Hex inverter Features High speed: t PD = 11 ns (typ.) at =4.5V Low power dissipation: I CC = 1 μa (max.) at T A =25 C Compatible with TTL outputs: V IH = 2 V (min.) V IL = 0.8 V (max) Balanced propagation
More information2009 Spring CS211 Digital Systems & Lab 1 CHAPTER 3: TECHNOLOGY (PART 2)
1 CHAPTER 3: IMPLEMENTATION TECHNOLOGY (PART 2) Whatwillwelearninthischapter? we learn in this 2 How transistors operate and form simple switches CMOS logic gates IC technology FPGAs and other PLDs Basic
More informationObsolete Product(s) - Obsolete Product(s)
QUAD 2-INPUT NAND GATE HIGH SPEED: t PD = 12ns (TYP.) at V CC = 4.5V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS : V IH = 2V (MIN.) V IL = 0.8V (MAX) BALANCED PROPAGATION
More informationToday's Goals. Finish MOS transistor Finish NMOS logic Start CMOS logic
Bi Today's Goals Finish MOS transistor Finish Start Bi MOS Capacitor Equations Threshold voltage Gate capacitance V T = ms Q i C i Q II C i Q d C i 2 F n-channel - - p-channel ± ± + + - - Contributions
More informationCPE/EE 427, CPE 527 VLSI Design I CMOS Inverter. CMOS Inverter: A First Look
CPE/EE 427, CPE 527 VLSI Design I CMOS Inverter Department of Electrical and Computer Engineering University of Alabama in Huntsville Aleksandar Milenkovic CMOS Inverter: A First Look C L 9/11/26 VLSI
More informationPin Connection (Top View)
TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70L/85L SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits
More informationFAMILIARIZATION WITH DIGITAL PULSE AND MEASUREMENTS OF THE TRANSIENT TIMES
EXPERIMENT 1 FAMILIARIZATION WITH DIGITAL PULSE AND MEASUREMENTS OF THE TRANSIENT TIMES REFERENCES Analysis and Design of Digital Integrated Circuits, Hodges and Jackson, pages 6-7 Experiments in Microprocessors
More informationELEC 2210 EXPERIMENT 12 NMOS Logic
ELEC 2210 EXPERIMENT 12 NMOS Logic Objectives: The experiments in this laboratory exercise will provide an introduction to NMOS logic. You will use the Bit Bucket breadboarding system to build and test
More informationLab 7 (Hands-On Experiment): CMOS Inverter, NAND Gate, and NOR Gate
Lab 7 (Hands-On Experiment): CMOS Inverter, NAND Gate, and NOR Gate EECS 170LB, Wed. 5:00 PM TA: Elsharkasy, Wael Ryan Morrison Buu Truong Jonathan Lam 03/05/14 Introduction The purpose of this lab is
More information74ALVC Low Voltage 16-Bit Bidirectional Transceiver with 3.6V Tolerant Inputs and Outputs and 26Ω Series Resistors in A Port Outputs
74ALVC162245 Low Voltage 16-Bit Bidirectional Transceiver with 3.6V Tolerant Inputs and Outputs and 26Ω Series Resistors in A Port Outputs General Description The ALVC162245 contains sixteen non-inverting
More informationFAN7191-F085 High-Current, High and Low Side Gate Drive IC
FAN7191-F85 High-Current, High and Low Side Gate Drive IC Features! Floating Channel for Bootstrap Operation to +6V! 4.5A Sourcing and 4.5A Sinking Current Driving Capability! Common-Mode dv/dt Noise Cancelling
More informationECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits
Faculty of Engineering ECE 334: Electronic Circuits Lecture 10: Digital CMOS Circuits CMOS Technology Complementary MOS, or CMOS, needs both PMOS and NMOS FET devices for their logic gates to be realized
More information4-bit counter circa bit counter circa 1990
Digital Logic 4-bit counter circa 1960 8-bit counter circa 1990 Logic gates Operates on logical values (TRUE = 1, FALSE = 0) NOT AND OR XOR 0-1 1-0 0 0 0 1 0 0 0 1 0 1 1 1 0 0 0 1 0 1 0 1 1 1 1 1 0 0 0
More informationC H A P T E R 5. Amplifier Design
C H A P T E 5 Amplifier Design The Common-Source Amplifier v 0 = r ( g mvgs )( D 0 ) A v0 = g m r ( D 0 ) Performing the analysis directly on the circuit diagram with the MOSFET model used implicitly.
More informationNC7ST00 TinyLogic HST 2-Input NAND Gate
TinyLogic HST 2-Input NAND Gate General Description The is a single 2-Input high performance CMOS NAND Gate, with TTL-compatible inputs. Advanced Silicon Gate CMOS fabrication assures high speed and low
More informationTC4011BP,TC4011BF,TC4011BFN,TC4011BFT
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4011BP/BF/BFN/BFT TC4011BP,TC4011BF,TC4011BFN,TC4011BFT TC4011B Quad 2 Input NAND Gate The TC4011B is 2-input positive logic NAND gate respectively.
More informationMM74HCU04 Hex Inverter
MM74HCU04 Hex Inverter General Description The MM74HCU04 inverters utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard
More informationChapter 15 Integrated Circuits
Chapter 15 Integrated Circuits SKEE1223 Digital Electronics Mun im/arif/izam FKE, Universiti Teknologi Malaysia December 8, 2015 Overview 1 Basic IC Characteristics Packaging Logic Families Datasheets
More information74ACT00B QUAD 2-INPUT NAND GATE
QUAD 2-INPUT NAND GATE HIGH SPEED: t PD = 4.5ns (TYP.) at V CC = 5V LOW POWER DISSIPATION: I CC = 2µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS V IH = 2V (MIN.), V IL = 0.8V (MAX.) 50Ω TRANSMISSION
More informationNJU3714A 12-BIT SERIAL TO PARALLEL CONVERTER PACKAGE OUTLINE GENERAL DESCRIPTION PIN CONFIGURATION FEATURES BLOCK DIAGRAM
12-BIT SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION The NJU3714A is a 12-bit serial to parallel converter especially applying to MPU outport expander. It can operate from 2.4V to 5.5V. The effective
More informationNJU3712A 8-BIT SERIAL TO PARALLEL CONVERTER PACKAGE OUTLINE GENERAL DESCRIPTION PIN CONFIGURATION FEATURES BLOCK DIAGRAM
8-BIT SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION The NJU3712A is an 8-bit serial to parallel converter especially applying to MPU outport expander. It can operate from 2.4V to 5.5V. The effective
More informationENG2410 Digital Design CMOS Technology. Fall 2017 S. Areibi School of Engineering University of Guelph
ENG2410 Digital Design CMOS Technology Fall 2017 S. reibi School of Engineering University of Guelph The Transistor Revolution First transistor Bell Labs, 1948 Bipolar logic 1960 s Intel 4004 processor
More informationNJU3716A 16-BIT SERIAL TO PARALLEL CONVERTER PACKAGE OUTLINE GENERAL DESCRIPTION PIN CONFIGURATION FEATURES BLOCK DIAGRAM
16-BIT SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION The is a 16-bit serial to parallel converter especially applying to MPU outport expander. It can operate from 2.4V to 5.5V. The effective outport
More informationDigital Systems Laboratory
2012 Fall CSE140L Digital Systems Laboratory Lecture #2 by Dr. Choon Kim CSE Department, UCSD chk034@eng.ucsd.edu Lecture #2 1 Digital Technologies CPU(Central Processing Unit) GPU(Graphics Processing
More informationDigital Electronics. Assign Ò1Ó and Ò0Ó to a range of voltage (or current), with a separation that minimizes a transition region.
Digital Electronics Assign Ò1Ó and Ò0Ó to a range of voltage (or current), with a separation that minimizes a transition region Positive Logic Logic 1 Negative Logic Logic 0 Voltage Transition egion Transition
More informationPractical Aspects Of Logic Gates
Practical Aspects Of Logic Gates Introduction & Objectives Logic gates are physically implemented as Integrated Circuits (IC). Integrated circuits are implemented in several technologies. Two landmark
More informationModule 4 : Propagation Delays in MOS Lecture 19 : Analyzing Delay for various Logic Circuits
Module 4 : Propagation Delays in MOS Lecture 19 : Analyzing Delay for various Logic Circuits Objectives In this lecture you will learn the following Ratioed Logic Pass Transistor Logic Dynamic Logic Circuits
More informationDIGITAL ELECTRONICS. Digital Electronics - B1 28/04/ DDC Storey 1. Group B: Digital circuits and devices
Politecnico di Torino - ICT school Group B: Digital circuits and devices DIGITAL ELECTRONICS B DIGITAL CIRCUITS B.1 Logic devices B1 B2 B3 B4 Logic families Combinatorial circuits Basic sequential circuits
More informationQuad 2-input AND gate
Quad 2-input AND gate BU40B / BU40BF / BU40BF The BU40B, BU40BF, and BU40BF are dual-input positive-logic AND gates with four circuits mounted on a single chip. An inverter-type buffer is added to the
More informationDATA SHEET. 74HC4050 Hex high-to-low level shifter. Product specification File under Integrated Circuits, IC06
DATA SHEET File under Integrated Circuits, IC06 December 1990 Philips Semiconducts FEATURES Output capability: standard I CC categy: SSI GENERAL DESCRIPTION The is a high-speed Si-gate CMOS device and
More informationBasic Characteristics of Digital ICs
ECEN202 Section 2 Characteristics of Digital IC s Part 1: Specification of characteristics An introductory look at digital IC s: Logic families Basic construction and operation Operating characteristics
More informationDIGITAL VLSI LAB ASSIGNMENT 1
DIGITAL VLSI LAB ASSIGNMENT 1 Problem 1: NMOS and PMOS plots using Cadence. In this exercise, you are required to generate both NMOS and PMOS I-V device characteristics (I/P and O/P) using Cadence (Use
More informationUTC UNISONIC TECHNOLOGIES CO. LTD 1 INVERTER CIRCUITS
UTC CD469 INERTER CIRCUITS DESCRIPTION The UTC CD469 consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power consumption,
More informationLecture 02: Logic Families. R.J. Harris & D.G. Bailey
Lecture 02: Logic Families R.J. Harris & D.G. Bailey Objectives Show how diodes can be used to form logic gates (Diode logic). Explain the need for introducing transistors in the output (DTL and TTL).
More informationTransistor Digital Circuits
Transistor Digital Circuits Switching Transistor Model (on) (on) T n T p Controlled switch model v CT > V CTex ; T- (on); i O > 0; v O 0 v CT < V Thn ; T- (off); i O = 0; v O = V PS v CT > V Thp ; T- (off);
More informationCD4069UBC Inverter Circuits
CD4069UBC Inverter Circuits General Description The CD4069UB consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating range, low power
More informationINTEGRATED CIRCUITS. 74LVC00A Quad 2-input NAND gate. Product specification Supersedes data of 1997 Aug 11 IC24 Data Handbook.
INTEGRATED CIRCUITS Supersedes data of 1997 Aug 11 IC24 Data Handbook 1998 Apr 28 FEATURES Wide supply range of 1.2V to 3.6V Complies with JEDEC standard no. 8-1A Inputs accept voltages up to 5.5V CMOS
More informationM74HCT164TTR 8 BIT SIPO SHIFT REGISTER
8 BIT SIPO SHIFT REGISTER HIGH SPEED: t PD = 24 ns (TYP.) at V CC = 4.5V LOW POWER DISSIPATION: I CC = 4µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS : V IH = 2V (MIN.) V IL = 0.8V (MAX) BALANCED PROPAGATION
More informationChapter 6 Digital Circuit 6-6 Department of Mechanical Engineering
MEMS1082 Chapter 6 Digital Circuit 6-6 TTL and CMOS ICs, TTL and CMOS output circuit When the upper transistor is forward biased and the bottom transistor is off, the output is high. The resistor, transistor,
More informationOctal 3-State Noninverting Transparent Latch High-Performance Silicon-Gate CMOS
TECHNICAL DATA IN74HCT573A Octal 3-State Noninverting Transparent Latch High-Performance Silicon-Gate CMOS The IN74HCT573A is identical in pinout to the LS/ALS573. This device may be used as a level converter
More informationM74HCT02TTR QUAD 2-INPUT NOR GATE
QUAD 2-INPUT NOR GATE HIGH SPEED: t PD = 15 ns (TYP.) at V CC = 4.5V LOW POWER DISSIPATION: I CC = 1µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS : V IH = 2V (MIN.) V IL = 0.8V (MAX) BALANCED PROPAGATION
More informationA 16Ω Audio Amplifier with 93.8 mw Peak loadpower and 1.43 quiscent power consumption
A 16Ω Audio Amplifier with 93.8 mw Peak loadpower and 1.43 quiscent power consumption IEEE Transactions on circuits and systems- Vol 59 No:3 March 2012 Abstract A class AB audio amplifier is used to drive
More informationECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor
More information8-BIT SERIAL-INPUT SHIFT REGISTER WITH LATCHED 3-STATE OUTPUTS High-Performance Silicon-Gate CMOS
8-BIT SERIAL-INPUT SHIFT REGISTER WITH LATCHED -STATE OUTPUTS High-Performance Silicon-Gate CMOS The IN74HC4094 is identical in pinout to the LS/ALS4094. The device inputs are compatible with standard
More informationCHAPTER 3 PERFORMANCE OF A TWO INPUT NAND GATE USING SUBTHRESHOLD LEAKAGE CONTROL TECHNIQUES
CHAPTER 3 PERFORMANCE OF A TWO INPUT NAND GATE USING SUBTHRESHOLD LEAKAGE CONTROL TECHNIQUES 41 In this chapter, performance characteristics of a two input NAND gate using existing subthreshold leakage
More information74ACT240TTR OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (INVERTED)
OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (INVERTED) HIGH SPEED: t PD = 5ns (TYP.) at V CC = 5V LOW POWER DISSIPATION: I CC = 4µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS V IH = 2V (MIN.), V IL = 0.8V
More informationTC74ACT540P,TC74ACT540F,TC74ACT540FW,TC74ACT540FT TC74ACT541P,TC74ACT541F,TC74ACT541FW,TC74ACT541FT
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT540,541P/F/FW/FT TC74ACT540P,TC74ACT540F,TC74ACT540FW,TC74ACT540FT TC74ACT541P,TC74ACT541F,TC74ACT541FW,TC74ACT541FT Octal Bus Buffer TC74ACT540P/F/FW/FT
More informationDATASHEET EL7240, EL7241. Features. Pinouts. Applications. Ordering Information. Operating Voltage Range. High Speed Coil Drivers
High Speed Coil Drivers OBSOLETE PRODUCT NO RECOMMENDED REPLACEMENT contact our Technical Support Center at 1-888-INTERSIL or www.intersil.com/tsc DATASHEET FN7284 Rev 0.00 The EL7240/EL7241 high speed
More informationLogic Families. A-PDF Split DEMO : Purchase from to remove the watermark. 5.1 Logic Families Significance and Types. 5.1.
A-PDF Split DEMO : Purchase from www.a-pdf.com to remove the watermark 5 Logic Families Digital integrated circuits are produced using several different circuit configurations and production technologies.
More informationUnit 1 Session - 3 TTL Parameters
Objectives Understanding various TTL Parameters Floating Inputs Worst-Case Input Voltages & Output Voltages Profiles and Windows Compatibility Sourcing and Sinking Noise Immunity Standard Loading and Loading
More informationNJU BIT SERIAL TO PARALLEL CONVERTER PACKAGE OUTLINE GENERAL DESCRIPTION PIN CONFIGURATION FEATURES BLOCK DIAGRAM
20-BIT SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION The NJU3718 is a 20-bit serial to parallel converter especially applying to MPU outport expander. The effective outport assignment of MPU is available
More informationCR6842. Green-Power PWM Controller with Freq. Jittering. Features. Applications. General Description. Leading-edge blanking on Sense input
Green-Power PWM Controller with Freq. Jittering Features Low Cost, Green-Power Burst-Mode PWM Very Low Start-up Current ( about 7.5µA) Low Operating Current ( about 3.0mA) Current Mode Operation Under
More informationChapter 2 Combinational Circuits
Chapter 2 Combinational Circuits SKEE2263 Digital Systems Mun im/ismahani/izam {munim@utm.my,e-izam@utm.my,ismahani@fke.utm.my} February 23, 26 Why CMOS? Most logic design today is done on CMOS circuits
More informationFAN7371 High-Current High-Side Gate Drive IC
FAN1 High-Current High-Side Gate Drive IC Features! Floating Channel for Bootstrap Operation to +V! A/A Sourcing/Sinking Current Driving Capability! Common-Mode dv/dt Noise Canceling Circuit!.V and V Input
More informationCMOS the Ideal Logic Family
CMOS the Ideal Logic Family National Semiconductor Application Note 77 Stephen Calebotta January 1983 INTRODUCTION Let s talk about the characteristics of an ideal logic family It should dissipate no power
More informationDigital circuits. Bởi: Sy Hien Dinh
Digital circuits Bởi: Sy Hien Dinh This module presents the basic concepts of MOSFET digital logic circuits. We will examine NMOS logic circuits, which contain only n-channel transistors, and complementary
More informationNJU BIT SERIAL TO PARALLEL CONVERTER PACKAGE OUTLINE GENERAL DESCRIPTION PIN CONFIGURATION FEATURES BLOCK DIAGRAM
8-BIT SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION The is an 8-bit serial to parallel converter especially applying to MPU outport expander. The effective outport assignment of MPU is available as
More information74ACT157TTR QUAD 2 CHANNEL MULTIPLEXER
QUAD 2 CHANNEL MULTIPLEXER HIGH SPEED: t PD = 5.5 ns (TYP.) at V CC =5V LOW POWER DISSIPATION: I CC =4µA(MAX.) at T A =25 C COMPATIBLE WITH TTL OUTPUTS V IH = 2V (MIN.), V IL = 0.8V (MAX.) 50Ω TRANSMISSION
More informationTC74ACT74P,TC74ACT74F,TC74ACT74FN,TC74ACT74FT
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT74P/F/FN/FT TC74ACT74P,TC74ACT74F,TC74ACT74FN,TC74ACT74FT Dual D-Type Flip Flop with Preset and Clear The TC74ACT74 is an advanced high
More informationAppendix B Page 1 54/74 FAMILIES OF COMPATIBLE TTL CIRCUITS PIN ASSIGNMENT (TOP VIEWS)
Appendix B Page 1 54/74 FAMILIES OF COMPATIBLE TTL CIRCUITS PIN ASSIGNMENT (TOP VIEWS) See page 3 See page 3 See page 7 See page 14 See page 9 See page 16 See page 10 TEXAS INSTRUMENTS LTD have given their
More informationCMOS Circuits CONCORDIA VLSI DESIGN LAB
CMOS Circuits 1 Combination and Sequential 2 Static Combinational Network CMOS Circuits Pull-up network-pmos Pull-down network-nmos Networks are complementary to each other When the circuit is dormant,
More informationShorthand Notation for NMOS and PMOS Transistors
Shorthand Notation for NMOS and PMOS Transistors Terminal Voltages Mode of operation depends on V g, V d, V s V gs = V g V s V gd = V g V d V ds = V d V s = V gs - V gd Source and drain are symmetric diffusion
More informationThe entire range of digital ICs is fabricated using either bipolar devices or MOS devices or a combination of the two. Bipolar Family DIODE LOGIC
Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: IInd Year, Sem - IIIrd Subject: Computer Science Paper No.: IX Paper Title: Computer System Architecture Lecture No.: 10 Lecture Title:
More informationGeneral Structure of MOS Inverter
General Structure of MOS Inverter Load V i Drive Department of Microelectronics and omputer Science, TUL Digital MOS ircuits Families Digital MOS ircuits PMOS NMOS MOS BiMOS Depletion mode load Enhancement
More information