JCS1404 封装 Package. High efficiency switch mode power supplies UPS

Transcription

1 主要参数 MAIN CHAACTEISTICS 封装 Package N 沟道增强型场效应晶体管 N-CHANNEL MOSFET ID VDSS dson-max (@Vgs=10V) Qg-typ 用途 高频开关电源 UPS 电源 204 A 40 V 4 mω 106nC APPLICATIONS High efficiency switch mode power supplies UPS 产品特性 低栅极电荷 低 C rss ( 典型值 235pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 ohs 产品 FEATUES Low gate charge Low C rss (typical 235pF ) Fast switching 100% avalanche tested Improved dv/dt capability ohs product 订货信息 ODE MESSAGE 订货型号 Order codes 印 记 封 装 有卤 - 条管 无卤 - 条管 有卤 - 编带 无卤 - 编带 Marking Package Halogen-Tube Halogen-Free-Tube Halogen-eel Halogen-Free-eel C-C-B C-C-B N/A N/A C TO-220C F-F-B F-F-B N/A N/A F TO-220MF 版本 :201806F 1/9

2 绝对最大额定值 ABSOLUTE ATINGS (Tc=25 ) 项 目 Parameter 符号 Symbol 数值 Value C F 单位 Unit 最高漏极 - 源极直流电压 Drain-Source Voltage V DSS 40 V 连续漏极电流 Drain Current -continuous I D 204* A T=25 T= * A 最大脉冲漏极电流 ( 注 1) Drain Current pulse(note 1) 最高栅源电压 Gate-Source Voltage I DM 816* A V GSS ±20 V 单脉冲雪崩能量 ( 注 2) Single Pulsed Avalanche Energy(note 2) E AS 1580 mj 重复雪崩能量 ( 注 1) epetitive Avalanche Current(note 1) 二极管反向恢复最大电压变化速率 ( 注 3) Peak Diode ecovery dv/dt(note 3) E A mj dv/dt 1.5 V/ns 耗散功率 Power Dissipation P D T C =25 -Derate above W W/ 最高结温及存储温度 Operating and Storage Temperature ange T J,T STG -55~+175 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes * 漏极电流由最高结温限制 *Drain current limited by maximum junction temperature T L 300 版本 :201806F 2/9

3 电特性 ELECTICAL CHAACTEISTICS 项目 Parameter 关态特性 Off Characteristics 漏 - 源击穿电压 Drain-Source Voltage 击穿电压温度特性 Breakdown Voltage Temperature Coefficient 零栅压下漏极漏电流 Zero Gate Voltage Drain Current 正向栅极体漏电流 Gate-body leakage current, forward 反向栅极体漏电流 Gate-body leakage current, reverse 通态特性 On-Characteristics 阈值电压 Gate Threshold Voltage 静态导通电阻 Static Drain-Source On-esistance 符号测试条件最小典型最大单位 Symbol Tests conditions Min Typ Max Units BV DSS I D =250μA, V GS =0V V ΔBV DSS /Δ I D =250μA, referenced to T J I DSS V/ V DS =40V,V GS =0V, T C = μa V DS =32V, T C = μa I GSSF V DS =0V, V GS =20V na I GSS V DS =0V, V GS =-20V na V GS(th) V DS = V GS, I D =250μA V DS(ON) V GS =10V, I D =95A mω 栅极电阻 Gate esistance G f=1.0mh Z, open drain 2.5 Ω 正向跨导 Forward Transconductance 动态特性 Dynamic Characteristics 输入电容 Input capacitance 输出电容 Output capacitance 反向传输电容 everse transfer capacitance g fs V DS = 20V, I D =95A(note 4) S C iss pf V DS =25V, C oss V GS =0V, pf f=1.0mh Z C rss pf 版本 :201806F 3/9

4 电特性 ELECTICAL CHAACTEISTICS 开关特性 Switching Characteristics 延迟时间 Turn-On delay time t d (on) V DD =20V,I D =95A, G =25Ω ns 上升时间 Turn-On rise time t r V GS =10V ns 延迟时间 Turn-Off delay time t d (off) (note 4,5) ns 下降时间 Turn-Off Fall time t f ns 栅极电荷总量 Total Gate Charge Q g V DS =32V, nc 栅 - 源电荷 Gate-Source charge Q gs I D =95A nc 栅 - 漏电荷 Gate-Drain charge V GS =10V (note 4,5) nc Q gd 漏 - 源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum atings 正向最大连续电流 Maximum Continuous Drain I S A -Source Diode Forward Current 正向最大脉冲电流 Maximum Pulsed Drain-Source I SM A Diode Forward Current 正向压降 Drain-Source Diode Forward V SD V GS =0V, I S =95A V Voltage 反向恢复时间 t rr everse recovery time V GS =0V, I S =95A ns 反向恢复电荷 di F /dt=100a/μs (note 4) Q rr everse recovery charge nc 热特性 THEMAL CHAACTEISTIC 最大项目符号单位 Max Parameter Symbol Unit C F 结到管壳的热阻 Thermal esistance, Junction to Case th(j-c) /W 结到环境的热阻 Thermal esistance, Junction to Ambient th(j-a) /W 注释 : 1: 脉冲宽度由最高结温限制 2:L=0.35mH, I AS=95A, G=25 Ω, 起始结温 T J=25 3:I SD 95A,di/dt 300A/μs,VDD BV DSS, 起始结温 T J=25 4: 脉冲测试 : 脉冲宽度 300μs, 占空比 2% 5: 基本与工作温度无关 1:Pulse width limited by maximum junction temperature 2:L=0.35mH, I AS=95A, G=25 Ω,Starting T J=25 3:I SD 95A,di/dt 300A/μs,VDD BV DSS, Starting T J=25 4:Pulse Test:Pulse Width 300μs,Duty Cycle 2% 5:Essentially independent of operating temperature 版本 :201806F 4/9

5 特征曲线 ELECTICAL CHAACTEISTICS (curves) On-egion Characteristics Transfer Characteristics I D [A] V GS Top 15V 10V 9V 8V 7V 6.5V 6V 5.5V Bottom 5V I D [A] μs pulse test 2. T C = μs pulse test 2.V DS =40V V DS [V] Body Diode Forward Voltage Variation vs. Source Current and Temperature V GS [V] Capacitance Characteristics 1x10 4 I D [A] μs pulse test 2. V GS =0V Capacitance [pf] 9x10 3 8x10 3 7x10 3 6x10 3 5x10 3 4x10 3 3x10 3 2x10 3 1x10 3 C iss C oss C rss C iss =C gs +C gd (C ds =shorted) C oss =C ds +C gd C rss =C gd V SD [V] V D S Drain-Source Voltage [V] Gate Charge Characteristics Maximum Safe Operating Area V DS =20V V DS =32V V GS Gate Source Voltage[V] Q g Toltal Gate Charge [nc] 版本 :201806F 5/9

6 特征曲线 ELECTICAL CHAACTEISTICS (curves) Maximum Drain Current vs. Case Temperature Transient Thermal esponse Curve 1 Z θ JC (t) Thermal esponse D= single pulse P DM 1 Z θ JC (t)=0.45 /W Max 2 Duty Factor, D=t 1 /t 2 3 T JM -T c =P DM * Z θ JC (t) t 1 t 2 1E-5 1E-4 1E t 1 Square Wave Pulse Duration [sec] 版本 :201806F 6/9

7 外形尺寸 PACKAGE MECHANICAL DATA TO-220C 单位 Unit:mm 版本 :201806F 7/9

8 外形尺寸 PACKAGE MECHANICAL DATA TO-220MF 单位 Unit:mm 版本 :201806F 8/9

9 注意事项 1. 吉林华微电子股份有限公司的产品销售分 为直销和销售代理, 无论哪种方式, 订货 时请与公司核实 2. 购买时请认清公司商标, 如有疑问请与公 司本部联系 3. 在电路设计时请不要超过器件的绝对最大 额定值, 否则会影响整机的可靠性 4. 本说明书如有版本变更不另外告知 NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent, thus, for customers, when ordering, please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 联系方式吉林华微电子股份有限公司 CONTACT JILIN SINO-MICOELECTONICS CO., LTD. 公司地址 : 吉林省吉林市深圳街 99 号邮编 : 总机 : 传真 : 网址 : ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: Tel: Fax: Web Site: 市场营销部地址 : 吉林省吉林市深圳街 99 号邮编 : 电话 : 传真 : MAKET DEPATMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: Tel: Fax: 版本 :201806F 9/9