SVF10N65CF/K_Datasheet

Transcription

1 A, 650V N-CHANNEL MOSFET 0BGENERAL DESCRIPTION SVFN65CF/K is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. BFEATURES A,650V,R DS(on)(typ.) GS =V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. Package Marking Hazardous Substance Control Packing SVFN65CF TO-220F-3L SVFN65CF Halogen free Tube SVFN65CK TO-262-3L SVFN65CK Halogen free Tube http: // Page of 8

2 ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Ratings Characteristics Symbol SVFN65CF SVFN65CK Unit Drain-Source Voltage V DS 650 V Gate-Source Voltage V GS ±30 V Drain Current T C = 25 C I D T C = 0 C 6.3 Drain Current Pulsed I DM 40 A Power Dissipation(T C=25 C) -Derate above 25 C P D W W/ C Single Pulsed Avalanche Energy (Note ) E AS 68 mj Operation Junction Temperature Range T J -55~+50 C Storage Temperature Range T stg -55~+50 C A THERMAL CHARACTERISTICS Ratings Characteristics Symbol SVFN65CF SVFN65CK Unit Thermal Resistance, Junction-to-Case R θjc C/W Thermal Resistance, Junction-to-Ambient R θja C/W ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BV DSS V GS=0V, I D=250µA V Drain-Source Leakage Current I DSS V DS=650V, V GS=0V µa Gate-Source Leakage Current I GSS V GS=±30V, V DS=0V ±0 na Gate Threshold Voltage V GS(th) V GS= V DS, I D=250µA V Static Drain- Source On State Resistance R DS(on) V GS=V, I D=5.0A Ω Input Capacitance C iss V DS=25V,V GS=0V, Output Capacitance C oss f=.0mhz Reverse Transfer Capacitance C rss pf Turn-on Delay Time t d(on) V DD=325V, I D=A, Turn-on Rise Time t r R G=25Ω Turn-off Delay Time t d(off) ns Turn-off Fall Time t f (Note 2,3) Total Gate Charge Q g V DS=520V,I D=A, Gate-Source Charge Q gs V GS=V nc Gate-Drain Charge Q gd (Note 2,3) http: // Page 2 of 8

3 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current I S Integral Reverse p-n Junction Pulsed Source Current I SM Diode in the MOSFET A Diode Forward Voltage V SD I S=A,V GS=0V V Reverse Recovery Time T rr I S=A,V GS=0V, ns Reverse Recovery Charge Q rr di F/dt=0A/µS µc. L=30mH, I AS=6.0A, V DD=0V, R G=25Ω, starting T J=25 C; 2. Pulse Test: Pulse width 300μs,Duty cycle 2%; 3. Essentially independent of operating temperature. http: // Page 3 of 8

4 TYPICAL CHARACTERISTICS Drain Current ID(A) 0 Figure. On-Region Characteristics Figure 2. Transfer Characteristics 0 V GS=4.5V V GS=5V V GS=5.5V V GS=6V V GS=7V V GS=8V V GS=V V GS=5V.250µS pulse test 2.T C=25 C Drain Current ID(A) C 25 C 50 C.250µS pulse test 2.V DS=50V Drain-Source On-Resistance RDS(ON)(mΩ) Drain-Source Voltage V DS (V) Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage V GS=V V GS=20V T J=25 C Drain Current I D (A) Reverse Drain Current IDR(A) Gate-Source Voltage V GS (V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0-55 C 25 C 50 C.250µS pulse test 2.V GS=0V Source-Drain Voltage V SD (V) Capacitance (pf) Figure 5. Capacitance Characteristics C iss C oss C rss C iss=c gs+c gd(c ds=shorted) C oss=c ds+c gd C rss=c gd. V GS=0V 2. f=mhz Gate-Source Voltage VGS(V) Figure 6. Gate Charge Characteristics V DS=520V V DS=325V V DS=30V I D=.0A Drain-Source Voltage V DS (V) Total Gate Charge Qg(nC) http: // Page 4 of 8

5 TYPICAL CHARACTERISTICS (continued) Drain-Source Breakdown Voltage BVDSS(Normalized) Figure 7. Breakdown Voltage Variation vs. Temperature. V GS=0V 2. I D=250µA Junction Temperature T J ( C) Drain-Source On-Resistance RDS(ON)(Normalized) Figure 8. On-resistance vs. Temperature. V GS=V 2. I D=5.0A Junction Temperature T J ( C) Figure 9-. Max. Safe Operating Figure 9-2. Max. Safe Operating Area(SVFN65CF) 2 Area(SVFN65CK) 2 Drain Current - ID(A) Operation in this area is limited by RDS(ON).T C=25 C 2.T j=50 C 3.R DS(ON)[max]=.0Ω DC ms ms 0µs Drain Current - ID(A) DC Operation in this area is limited by RDS(ON).T C=25 C 2.T j=50 C 3.R DS(ON)[max]=.0Ω ms ms 0µs Drain-Source Voltage - V DS (V) Drain-Source Voltage - V DS (V) 2 Figure. Max. Drain Current vs. Case Temperature Drain Current - ID(A) Case Temperature T C ( C) http: // Page 5 of 8

6 TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform 2V 200nF 50KΩ 300nF Same Type as DUT VDS VGS V Qg Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform VGS VDS RL VDD VDS 90% V RG DUT % VGS td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform VDS L BVDSS EAS = 2 LI AS 2 BVDSS BVDSS - VDD ID IAS V tp RG DUT VDD VDD ID(t) VDS(t) tp Time http: // Page 6 of 8

7 PACKAGE OUTLINE TO-220F-3L UNIT: mm BCS / / TO-262-3L UNIT: mm E A c2 SYMBOL MIN NOM MAX L2 A A b D b2 c c Ll D E b2 e L 2.54 BSC L A L b L e e c http: // Page 7 of 8

8 Disclaimer : reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such products could cause loss of body injury or damage to property. will supply the best possible product for customers! Part No.: SVFN65CF/K Document Type: Datasheet Copyright: Website: http: // Rev.:.8. Delete the package outline of TO-262L-3L Rev.:.7. Update the package outline of TO-262-3L Rev.:.6. Modify the Typical Characteristics Rev.:.5. Add the package information of TO-262L-3L 2. Modify the package information of TO-262-3L Rev.:.4. Modify the package information of TO-220F-3L Rev.:.3. Add information for TO-262-3L package Rev.:.2. Modify the thermal characteristics Rev.:.. Modify the figure 6 Rev.:.0. First release http: // Page 8 of 8