AIXTRON Investor Presentation. Excerpt of the IR Master Presentation 9M/2014 (FSE: AIXA, ISIN DE000A0WMPJ6, NASDAQ: AIXG, ISIN: US )

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1 AIXTRON Investor Presentation Excerpt of the IR Master Presentation 9M/2014 (FSE: AIXA, ISIN DE000A0WMPJ6, NASDAQ: AIXG, ISIN: US )

2 AIXTRON INVESTOR PRESENTATION 2 Forward-Looking Statements This document may contain forward-looking statements regarding the business, results of operations, financial condition and earnings outlook of AIXTRON within the meaning of the safe harbor provisions of the US Private Securities Litigation Reform Act of These statements may be identified by words such as may, will, expect, anticipate, contemplate, intend, plan, believe, continue and estimate and variations of such words or similar expressions. These forward-looking statements are based on our current views and assumptions and are subject to risks and uncertainties. You should not place undue reliance on these forward-looking statements. Actual results and trends may differ materially from those reflected in our forward-looking statements. This could result from a variety of factors, such as actual customer orders received by AIXTRON, the level of demand for deposition technology in the market, the timing of final acceptance of products by customers, the condition of financial markets and access to financing for AIXTRON, general conditions in the market for deposition plants and macroeconomic conditions, cancellations, rescheduling or delays in product shipments, production capacity constraints, extended sales and qualification cycles, difficulties in the production process, the general development in the semi-conductor industry, increased competition, fluctuations in exchange rates, availability of public funding, fluctuations and/or changes in interest rates, delays in developing and marketing new products, a deterioration of the general economic situation and any other factors discussed in any reports or other announcements field by AIXTRON with the U.S. Securities and Exchange Commission. Any forward-looking statements contained in this document are based on current expectations and projections of the Executive Board and on information currently available to it and are made as at the date hereof. AIXTRON undertakes no obligation to revise or update any forward-looking statements as a result of new information, future events or otherwise, unless expressly required to do so by law.

3 ABOUT AIXTRON Global Presence 3

4 TECHNOLOGY 4 One Technology Multiple Solutions Technology Deposition Technology Nano Scale Material Engineering Systems Compound Semiconductor (MOCVD, OVPD, PVPD, PECVD) Silicon Semiconductor (PECVD, CVD, ALD. MOCVD) Applications LEDs/OLEDs for displays LEDs/OLEDs for lighting SiC/GaN for power devices Optoelectronics for telecom/datacom Organic Electronics CD-, DVD-, Blu-ray-lasers High frequency for wireless III-V Compound and Organic solar cells Carbon Nanostructure Applications Metal and oxide films for CMOS transistors NAND-Flash Memory Next generation DRAM Memory PCRAM, ReRAM III-V for Channel Engineering Graphene, CNT

AIXTRON TECHNOLOGIES AND PRODUCTS 5 Compound Semiconductors MOCVD

Addressing Multiple Industries Proven Industry Standard & Market

the pipeline Integrated Concept (IC 2) System Planetary Reactor AIX

5 AIXTRON TECHNOLOGIES AND PRODUCTS 5 Compound Semiconductors MOCVD Two Reactor Technologies Planetary & Close Coupled Showerhead (CCS) Addressing Multiple Industries Proven Industry Standard & Market Leading Configurable, Extendable Common Platform Next-gen tool in the pipeline Integrated Concept (IC 2) System Planetary Reactor AIX G5+, 5x8 Close Coupled Showerhead CRIUS II-XL, 19x Corporate Presentation

6 OPERATIONS 6 Annual Equipment Revenues by Application AIXTRON Equipment Revenues (excl. spares) in EUR million LED Telecom/Datacom Consumer-/Optoelectronics Solar Others Silicon

7 1Q99 2Q99 3Q99 4Q99 1Q00 2Q00 3Q00 4Q00 1Q01 2Q01 3Q01 4Q01 1Q02 2Q02 3Q02 4Q02 1Q03 2Q03 3Q03 4Q03 1Q04 2Q04 3Q04 4Q04 1Q05 2Q05 3Q05 4Q05 1Q06 2Q06 3Q06 4Q06 1Q07 2Q07 3Q07 4Q07 1Q08 2Q08 3Q08 4Q08 1Q09 2Q09 3Q09 4Q09 1Q10 2Q10 3Q10 4Q10 1Q11 2Q11 3Q11 4Q11 1Q12 2Q12 3Q12 4Q12 1Q13 2Q13 3Q13 4Q13 1Q14 2Q14 3Q14 OPERATIONS 7 Equipment Order Intake per Quarter Source: Deutsche Bank Equity Research, AIXTRON SE 250 (EUR million) driven by strategic China investments driven by telecom/datacom and mobile phone driven by mobile phone penetration driven by LED TV driven by notebook backlighting 50 0 Compound Semiconductor Market China Investments

8 INDUSTRY & MARKETS 8 LED lighting market: multiple tipping points Source: : AIXTRON, McKinsey 2012 LED Lighting Cycle Various applications Different regions Numerous players

billion units LED penetration Market size (in US$ million)

Globalization and urbanization to drive LED lighting

lighting solutions Developed countries: SSL driven by expanding

replacement market Commercial: LED Light Bulb reaching price

9 billion units LED penetration Market size (in US$ million) INDUSTRY & MARKETS 9 LED Lighting Market Estimates Globalization and urbanization to drive LED lighting opportunities: Emerging countries: need for energy efficient lighting solutions Developed countries: SSL driven by expanding renovation market Outdoor: Early adoption streetlight replacement market Commercial: LED Light Bulb reaching price tipping point Source: Strategies Unlimited 2014; IHS 2014 Global LED lamp shipments LED Market Forecast

10 INDUSTRY & MARKETS 10 A-19 Bulb: 60W* LED Replacement Global Pricing Global Brands: Samsung, Osram, Philips, GE, Toshiba, etc. New light bulbs with higher lm/w being offered Brand suppliers increasingly offering attractively priced devices Source: Various websites; AIXTRON Regions Halogen CFL LED QoQ +/- Low High LED vs. Hal. (x) LED vs. CFL (x) Average US $ 2.0 $ 2.1 $ 9 0% $8 $10 4.8x 4.5x Average Japan $ 1.9 $ 4.6 $ 12 8% $8 $16 6.5x 2.6x Average EU $ 1.7 $ 5.4 $ 12 8% $7 $19 7.3x 2.3x Average Korea $ 1.6 $ 3.4 $ 10 3% $7 $14 6.4x 3.0x Average Taiwan $ 2.6 $ 4.3 $ 10 2% $7 $11 3.7x 2.3x Average $ 1.9 $ 4.0 $ 11 5% $7 $19 5.5x 2.7x * According to Tab. 6 of EU-Regulation 244/2009 requiring >700lm minimum for 60W

equivalent connected LED light bulbs at US$14.

11 INDUSTRY & MARKETS 11 LED Lighting: Regional Highlights More smart lighting products in the market and GE offers 60W equivalent connected LED light bulbs at US$14.97 Varieties of 100W equivalent LED bulbs with 1,600+ lumens are now available between US$20-25

12 2013e 2014e 2015e 2016e 2017e 2013e 2014e 2015e 2016e 2017e HB LED Market (bn units) HB LED Market (2" Equivalent Wafer in 000) INDUSTRY & MARKETS 12 Increasing LED Area Driving Growth Growth through increasing LED-unit and area demand Consistent epitaxial area growth will trigger equipment demand LED-lighting gaining further momentum 150 LED Units Equivalent Wafer Mobile & Others Display Lighting Mobile & Others Display Lighting (0.1mm²) (0.25mm²) (0.75-1mm²) *) Based on compilation of latest opinions by: DisplaySearch; Strategies Unlimited; Displaybank; Gartner Dataquest; IMS Research.; McKinsey Lighting Report

13 Incremental HB LEDs (bn units) Incremental HB LEDs (2" Equivalent Wafer in 000) Required number of MOCVD reactors INDUSTRY & MARKETS 13 Production Supply 3rd Party Estimates for HB LEDs Analysts Bull-Bear MOCVD system demand estimates Larger area and future replacement to drive equipment demand SSL is the strongest driver for material area growth Incremental LED units and area growth every year Incremental LED Units Incremental Material Area 15 7,000 1, ,000 5,000 4, ,000 2,000 1, e 2014e 2015e 2016e 2017e Incremental HB LEDs - Units e 2014e 2015e 2016e 2017e Incremental HB LEDs - Area (LHS) MOCVD Systems - Bear (RHS) MOCVD Systems - Bull (RHS) 0 Based on compilation of latest opinions by: Strategies Unlimited; DisplaySearch; Gartner Dataquest; IMS Res; McKinsey Lighting Report; Baader Bank; Bankhaus Lampe; Berenberg; Canaccord Genuity; CLSA; Commerzbank; Deutsche Bank, DZ Bank; Exane BNP; Goldman Sachs; JG Capital; JP Morgan; Liberum; Morgan Stanley; Needham; Susquehanna; UBS

14 OPERATIONS 14 5-Point-Program - Return to Sustainable Profitability 1 Customer Focusing on customer benefit 2 Technology & Products Putting unique technology portfolio to more effective use, further strengthening future products 3 Efficiency Optimizing process and project structures systematically 4 Finance Value driven financial orientation 5 Employees Strengthening AIXTRON s culture, instill selfresponsibility, fortifying communication

AIXTRON TECHNOLOGIES AND PRODUCTS Promising Future Markets 15 Silicon Semiconductors Compound Semiconductors Organic Carbon ALD (MOCVD) MOCVD OVPD /PVPD PECVD Silicon Semiconductors Compound

and PCRAM Active element and Electrode Logic High Mobility Channel LEDs for display: TVs, mobile phones, tablets, etc.

15 AIXTRON TECHNOLOGIES AND PRODUCTS Promising Future Markets 15 Silicon Semiconductors Compound Semiconductors Organic Carbon ALD (MOCVD) MOCVD OVPD /PVPD PECVD Silicon Semiconductors Compound Semiconductors Power Management GaN / SiC Organic and large area thin films Graphene, CNTs and CNWs DRAM Dielectric and Metal Electrode Flash Inter Poly Dielectric and Metals Logic Gate stack ReRAM and PCRAM Active element and Electrode Logic High Mobility Channel LEDs for display: TVs, mobile phones, tablets, etc. LEDs for lighting LEDs for automotive LEDs for data communication Telecom lasers Concentrator Photovoltaics RF transistors AC-DC converters DC-DC converters Solar inverters Motor drives in industrial applications automotive and consumer electronics OLEDs for display: TVs, mobile phones, tablets, etc. OLEDs for lighting Organic, flexible electronics Organic Photovoltaics Transistors Interconnects Flexible Electronics Energy Storage Sensors, etc. OLED-TV Fluctuating Equipment Demand Increasing Equipment Demand Expected by: 2014/2015 Increasing Equipment Demand Expected by: 2015 Increasing Equipment Demand Expected by: 2016/2017 Increasing Equipment Demand Expected by: Beyond 2018

FINANCIALS 16 24 - Month Business Development ( million) Equipment (only) Order Intake 35.4 29.9 30.5 35.7 37.1 37.7 38.2 37.6 @ $1.40 @ $1.30 @ $1.35 Equipment (only) Order Backlog 79.4 78.4 71.6 72.

16 FINANCIALS Month Business Development ( million) Equipment (only) Order Intake $1.35 Equipment (only) Order Backlog * $1.35 *) revalued on Jan.1, 2014 to 58.1m at $1.35/ Total Revenues (incl. equipment, service, spare parts) $1.356 Q4/2012 Q1/2013 Q2/2013 Q3/2013 Q4/2013 Q1/2014 Q2/2014 Q3/2014 USD order intake and backlog were recorded at the prevailing budget rate (2014: $1.35/ ) USD revenues were converted at the actual period average FX rate (9M/2014: $1.356/ )

17 FINANCIALS Consolidated Income Statement* 17 ( million) 9M/14 9M/13 +/- Q3/14 Q2/14 +/- Revenues % % Cost of sales % % Gross profit % % Gross Margin 22% -19% 41 pp 14% 27% -13 pp Selling expenses % % General & admin expenses % % R&D % % Net other op.(income)/expenses % % EBIT % % EBIT Margin -29% -63% 34 pp -39% -23% -16 pp Result before tax % % Pre-Tax Margin -28% -63% 35 pp -39% -22% -17 pp Net result % % Net Return on Sales -32% -65% 33 pp -44% -25% -19 pp *) rounded figures; may not add up

18 FINANCIALS Consolidated Statement of Financial Position* 18 ( million) 30/09/14 31/12/13 30/09/13 Property, plant & equipment Goodwill Other intangible assets Others Non-current assets Inventories, WIP & Finished Goods Trade receivables Others Cash & Cash Equivalents incl. CD Current Assets Shareholders' equity Non-current liabilities Trade payables Advance payments from customers Others Current liabilities Balance Sheet total *) rounded figures; may not add up

19 FINANCIALS Consolidated Statement of Cash Flows* 19 ( million) 9M/2014 9M/2013 Q3/2014 Q2/2014 Cash Flow from operating activities Cash Flow from investing activities Cash Flow from financing activities Exchange rate changes Net change in Cash & Cash Equivalents Cash & Cash Equivalents (beginning of period) Cash & Cash Equivalents (end of period) Change in Cash deposits Free Cash Flow** *) rounded figures; may not add up **) Operating CF + Investing CF + Changes in Cash Deposits

20 FUTURE MARKETS 20 Market Prospects Short-Term Further increasing adoption of LEDs for exterior, public infrastructure & commercial lighting Increased adoption of LEDs for consumer & residential lighting Introduction of next generation MOCVD tool for LED manufacturing Increasing adoption of GaN for power electronics Next generation NAND, DRAM & PRAM memory applications Increased emergence of silicon carbide (SiC) hybrid automotive & photovoltaic applications Mid- to Long-Term Development of applications using organic semiconductors Development of GaN-on-Si based power electronics or LEDs Further development of plastic electronics/flexible TFT backplanes Increased development for specialized compound solar cells Higher demand for High-k as well as interconnect components Progress in the convergence of compound material applications, e. g. substituting materials in the silicon semiconductor industry Development of applications using carbon nanostructures including graphene

21 AIXTRON INVESTOR PRESENTATION 21

22 APPENDIX 22 China: The Progress of LED Industry Policies Source: Ministry of Industry and Information Technology, China; CSA 2011/2012; McKinsey 2011; Goldman Sachs 2011; Morgan Stanley 2012 Phasing out of incandescent bulbs Government actions to facilitate LED lighting transition Enhance technologies development: LED fabrication, SSL basic research, etc. Consumer End-market subsidy: LED lighting bidding plan Public End-market subsidy:e.g. street lighting projects Subsidizing the supply chain: MOCVD investments MOCVD subsidies by individual circumstances Existing programs In discussion e 2015e

23 APPENDIX 23 LED Investment Cycle Global demand: Growth driven mainly by LED Lighting Supply: Margins, Consolidation, Considering Next-Gen Tools Source: IC Insights, AIXTRON Strong Market Demand > Supply Aggressive Capital Spending Supply Little Capacity Added Demand Price Demand < Supply Margin Margin Pressure Price Softening Weak market Current Status of the Industry

24 APPENDIX 24 Par 38 Bulb: LED Replacement Commercial Lighting Commercial Lighting: LED reaching economic tipping point Source: U.S. Energy Information Administration (EIA), AIXTRON Halogen CFL LED Product Philips- 72 Watt Energy Saving PAR38 EcoSmart-23Watt PAR38 Light Bulb CREE PAR38 LED Bulb Energy used (W) Equivalent to (W) Lifetime (hours) 1,100 8,000 25,000 Price (US$) Assuming running 12 hours per day Electricity cost per kilowatt-hour (kwh) $0.10 $0.10 $0.10 Lamp life time in years year electricity cost $31.54 $10.07 $ year bulb cost $20.31 $2.73 $4.37 LED PAR38 saving- one year* vs. Halogen $39.58 LED PAR38 saving- one year* vs. CFL $0.65 * ignoring installment/replacement costs

25 APPENDIX 25 LED Cost Structure by Application LED Chip: ca. 10% of total LED Light Bulb manufacturing cost Based on: AIXTRON; DOE 2014, IHS Q4/2013 LED TV Lighting 100% Phosphor 80% 60% GE Packaging 40% 20% LED Chip Process 0% 32" Edge-lit LED TV 32" Direct-lit LED TV Outdoor Area Lamp Interior LED Light Bulb- Downlight Lamp 800lm LED Component Substrate Lighting Science Group LED Assembly and others LGP, films, frames, drivers, thermal etc. Substrates Chip process Packaging Phosphor

26 APPENDIX 26 Compound Semiconductor System Generations Extendibility: Extensive choice of configurations and enhancements Scalability: Multiple technologies on one platform Productivity: Highest throughput, best yield, fastest growth rates Year of Introduction 2002 Standalone 2006 IC 2010/ 2011 IC 2 Platform Technology Chambers G3 Planetary 19x2 CCS G4 HT Planetary CRIUS CCS G5 HT Planetary CRIUS II CCS CRIUS II-L CCS CRIUS II-XL CCS 24x2, 8x4 19x2 42x2, 11x4, 6x6 31x2, 12x3, 7x4, 3x6, 1x12 56x2, 14x4, 8x6, 5x8 55x2, 13x4, 5x6 69x2, 16x4, 7x6, 3x8, 300/450mm 85x2, 19x4, 7x6, 3x8, 300/450mm 2012 IC 2 G5+ HT Planetary 5x8 GaN-on-Si Technology

MOCVD Planetary reactor offers flexibility; accommodating wafer sizes from 2 to 200 mm A process migration path without changing

27 FUTURE MARKETS 27 Compound Semiconductors and Silicon Two Converging Worlds Compound Semiconductors Dominated by small wafers 2, 4 & 6 Low level of automation and fab integration Complex binning process required No recognized shared Industry Roadmap AIXTRON G5+ MOCVD Planetary reactor offers flexibility; accommodating wafer sizes from 2 to 200 mm A process migration path without changing platforms 300 mm wafers (450mm on roadmap) Fully automated fabs Excellent yield management practices Recognized Industry Roadmap alignment

AIXTRON TECHNOLOGIES AND PRODUCTS Silicon Semiconductor - ALD 28 Product Description ALD 300mm ALD Technology QXP-8300 Mini-batch system High throughput : 2 Process Chambers 8 stations Up to 3

28 AIXTRON TECHNOLOGIES AND PRODUCTS Silicon Semiconductor - ALD 28 Product Description ALD 300mm ALD Technology QXP-8300 Mini-batch system High throughput : 2 Process Chambers 8 stations Up to 3 vaporizers and one bubbler Applications : DRAM, Logic and Flash High k Dielectric Metal electrode : ReRAM and PCRAM Active elements Proven in HVM with >40% lower CoO and >90% Uptime in DRAM and Flash Fabs Best-in class technology, state of the art deposition system, lowest CoO Product Features Up to 3 patented TriJet vaporizers Small volume confined process space ensure short ALD cycle time > 40 % less precursor consumption Efficient purge Isolated multi wafer processing with > 40% higher throughput Close Coupled Showerhead for uniform distribution Flexibility and ease of maintenance

development for memory & logic Source: Gartner 2014 Silicon ICs: Decade of Materials III-Vs /Si PCM, ReRAM

29 FUTURE MARKETS 29 Beyond LED Developments: Silicon Semiconductor Systems Multi generation film development for memory & logic Memory and Logic applications to drive ALD equipment industry Multi generation film development for memory & logic Source: Gartner 2014 Silicon ICs: Decade of Materials III-Vs /Si PCM, ReRAM High-k dielectrics CNT Graphene AIXTRON Positioning Metal Gates Transistor gate length nanometers R&D HVM

30 FUTURE MARKETS 30 Beyond LED Developments: Semi. Systems for Power Electronics GaN-on-Si emerging into V voltage range devices GaN-on-Si and SiC to compete for attractive 600V devices SiC with superior device performance and reliability for >1200V Source: Yole Développement GaN/Si SiC & GaN/Si competition Superjunction Silicon Technology

FUTURE MARKETS 31 Beyond LED Developments: Semi.

during AC-to-DC and DC-to-AC electricity conversion Higher-voltage operation Handles voltages more than 10 times higher than

over 300 C (twice the maximum temperature of Si-based devices).

31 FUTURE MARKETS 31 Beyond LED Developments: Semi. Systems for Power Electronics Source: DOE 2013 Reduced Energy Losses Eliminates up to 90% of the power losses that currently occur during AC-to-DC and DC-to-AC electricity conversion Higher-voltage operation Handles voltages more than 10 times higher than Si-based devices, greatly enhancing performance in high-power applications Highertemperature operation Operates at temperatures over 300 C (twice the maximum temperature of Si-based devices). This results in better overall system reliability Higher frequencies Operates at frequencies at least 10 times higher than Si-based devices, making possible more compact, less costly product designs Improved power quality Ensures more reliable and consistent power electronic device operation

AIXTRON TECHNOLOGIES AND PRODUCTS Organic Electronics OVPD 32 Product Description OVPD Proprietary carrier-gas enhanced gas phase deposition approach for organic thin films* Based on AIXTRON s core

32 AIXTRON TECHNOLOGIES AND PRODUCTS Organic Electronics OVPD 32 Product Description OVPD Proprietary carrier-gas enhanced gas phase deposition approach for organic thin films* Based on AIXTRON s core competence of carrier gas enhanced vapour phase deposition Free scalability: suitable for all relevant substrate generations Manufacturing technology applicable for OLED displays, OLED lighting, organic semiconductors, and organic photovoltaic Disruptive deposition technology for cost efficient OLED manufacturing Product Features High deposition rates for high throughput Reduced thermal stress for organic materials High material utilization efficiency Flexible process control Simplified scaling due to Close Coupled Showerhead and Decoupled source technology Flexible integration solutions for batch and inline Reduced number of deposition chamber and footprint

Test and repair Cathode deposition Encapsulation Aging Final test Front-end Array process Display

33 FUTURE MARKETS 33 Beyond LED Developments: Organic Electronics Source: DisplaySearch, AIXTRON Cleaning ITO deposition Coating Cleaning Organic material deposition Glass cutting Bonding Etching Stripping Test and repair Cathode deposition Encapsulation Aging Final test Front-end Array process Display equipment Front-end Cell process Display equipment Back-end Module process Display equipment Targeted technology

34 FUTURE MARKETS 34 Beyond LED Developments: Organic Electronics OVPD /PVPD : Co-Deposition of multiple sources Multi-layer deposition Source: Barclays 2012, AIXTRON RGB color-patterned OLED structure Cathode EIL n-doped ETL P-N contact R G B p-doped HTL Anode Substrate White OLED + Color Filter structure Cathode ETL Red Green HTL P-N contact Blue HTL Planarization Color Filter TFT-array Substrate Applicable technology

0/27/2014 FUTURE MARKETS Carbon PECVD 35 Graphene and Carbon Nanotube Deposition Systems Proprietary thermal and plasma enhanced chemical vapour deposition technology Excellent

BM300T (300mm) Graphene and carbon nanotube films for electronics, energy storage, thermal management, sensors and flexible/transparent applications Product features Fast response

CVD with frequency control Flexible processing for different applications Low cost of ownership Easy maintenance and cleaning User management features and growth library Graphene (2D)

35 0/27/2014 FUTURE MARKETS Carbon PECVD 35 Graphene and Carbon Nanotube Deposition Systems Proprietary thermal and plasma enhanced chemical vapour deposition technology Excellent uniformity and reproducibility with fast turnaround cycle times BM platform: BM R&D (2-inch), BM Pro (4-inch and 6-inch), BM GB (4-inch glovebox), BM HT (high temperature, 1700C), BM300T (300mm) Graphene and carbon nanotube films for electronics, energy storage, thermal management, sensors and flexible/transparent applications Product features Fast response heater and turnaround Material Properties AIXTRON Technology Enabling Applications Thermal CVD Substrate and top heating Closed loop infrared wafer temperature control Plasma enhanced CVD with frequency control Flexible processing for different applications Low cost of ownership Easy maintenance and cleaning User management features and growth library Graphene (2D) and Carbon nanotube (1D) Unique combination of high electrical/ thermal conductivity, mobility, flexibility and transparency Serving R&D market today AIXTRON BM Pro Production ready for tomorrow AIXTRON BM300T

36 FINANCIALS 36 Consolidated Income Statement* ( million) Revenues Cost of sales Gross profit Gross Margin -4% 0% 38% Selling expenses General & admin expenses R&D Net other op.(income)/expenses EBIT EBIT Margin -52% -58% 18% Result before tax Pre-Tax Margin -52% -57% 19% Net result Net Return on Sales -55% -64% 13% *) rounded figures; may not add up

37 FINANCIALS 37 Consolidated Statement of Financial Position* ( million) 31/12/13 31/12/12 31/12/11 Property, plant & equipment Goodwill Other intangible assets Others Non-current assets Inventories, WIP & Finished Goods Trade receivables Others Cash & Cash Equivalents incl. CD Current Assets Shareholders' equity Non-current liabilities Trade payables Advance payments from customers Others Current liabilities Balance Sheet total *) rounded figures; may not add up

38 FINANCIALS 38 Consolidated Statement of Cash Flows* ( million) Cash Flow from operating activities Cash Flow from investing activities Cash Flow from financing activities Exchange rate changes Net change in Cash & Cash Equivalents Cash & Cash Equivalents (beginning of period) Cash & Cash Equivalents (end of period) Change in Cash deposits Free Cash Flow** *) rounded figures; may not add up **) Operating CF + Investing CF + Changes in Cash Deposits

ABOUT AIXTRON Global Presence 39 AIXTRON SE Headquarters Herzogenrath,

carbonnanotechnology research. AIXTRON Inc.

39 ABOUT AIXTRON Global Presence 39 AIXTRON SE Headquarters Herzogenrath, Germany Core of AIXTRON s activities is the Technology and R&D Center near Aachen. AIXTRON Ltd. Cambridge, United Kingdom Focus on the enhancement of material sciences and carbonnanotechnology research. AIXTRON Inc. Sunnyvale, California, USA Focus on silicon applications for leading suppliers of DRAM and CMOS. Focus on engineering and process development in MOCVD and organic semiconductors.

40 Financial Calendar & Contact Data 40 February 2015 April 2015 May 2015 July 2015 October 2015 FY/2014 Results, Conference Call Q1/2015 Results, Conference Call Annual General Meeting, Aachen H1/2015 Results, Conference Call 9M/2015 Results, Conference Call For further information please contact: Investor Relations & Corporate Communications AIXTRON SE Dornkaulstr Herzogenrath, Germany IR Team Europe Phone: +49 (2407) invest@aixtron.com IR Team USA Andrea Su Phone: +1 (408) ext invest@aixtron.com

41 AIXTRON - Our technology. Your future. AIXTRON SE Dornkaulstr Herzogenrath Germany Phone +49 (2407) Fax +49 (2407) invest@aixtron.com

AIXTRON Investor Presentation. IR Presentation 9M/2016 (FSE: AIXA, ISIN DE000A0WMPJ6; AIXC, ISIN DE000A2BPYT0; NASDAQ: AIXG, ISIN: US )

AIXTRON Investor Presentation. IR Presentation 9M/2016 (FSE: AIXA, ISIN DE000A0WMPJ6; AIXC, ISIN DE000A2BPYT0; NASDAQ: AIXG, ISIN: US ) AIXTRON Investor Presentation IR Presentation 9M/2016 (FSE: AIXA, ISIN DE000A0WMPJ6; AIXC, ISIN DE000A2BPYT0; NASDAQ: AIXG, ISIN: US0096061041) AIXTRON Investor Relations, November 2016 Disclaimer 2 Additional