Physical Structure of CMOS Integrated Circuits

EE434 ASIC & Digital Systems

EE434 ASIC & Digital Systems Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Spring 2015 Dae Hyun Kim daehyun@eecs.wsu.edu 1 Lecture 4 More on CMOS Gates Ref: Textbook chapter

INTRODUCTION TO MOS TECHNOLOGY

INTRODUCTION TO MOS TECHNOLOGY 1. The MOS transistor The most basic element in the design of a large scale integrated circuit is the transistor. For the processes we will discuss, the type of transistor

Semiconductor Physics and Devices

Metal-Semiconductor and Semiconductor Heterojunctions The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is one of two major types of transistors. The MOSFET is used in digital circuit, because

Basic Fabrication Steps

Basic Fabrication Steps and Layout Somayyeh Koohi Department of Computer Engineering Adapted with modifications from lecture notes prepared by author Outline Fabrication steps Transistor structures Transistor

EE 434 ASIC and Digital Systems. Prof. Dae Hyun Kim School of Electrical Engineering and Computer Science Washington State University.

EE 434 ASIC and Digital Systems Prof. Dae Hyun Kim School of Electrical Engineering and Computer Science Washington State University Preliminaries VLSI Design System Specification Functional Design RTL

Memory characteristics of silicon nanowire transistors generated by weak impact ionization

Supplementary information for Memory characteristics of silicon nanowire transistors generated by weak impact ionization Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim* Department of Electrical

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND

Project 6 Capacitance of a PN Junction Diode

Project 6 Capacitance of a PN Junction Diode OVERVIEW: In this project, we will characterize the capacitance of a reverse-biased PN diode. We will see that this capacitance is voltage-dependent and we

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha

ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor

FUNDAMENTALS OF MODERN VLSI DEVICES

19-13- FUNDAMENTALS OF MODERN VLSI DEVICES YUAN TAUR TAK H. MING CAMBRIDGE UNIVERSITY PRESS Physical Constants and Unit Conversions List of Symbols Preface page xi xiii xxi 1 INTRODUCTION I 1.1 Evolution

ENG2410 Digital Design CMOS Technology. Fall 2017 S. Areibi School of Engineering University of Guelph

ENG2410 Digital Design CMOS Technology Fall 2017 S. reibi School of Engineering University of Guelph The Transistor Revolution First transistor Bell Labs, 1948 Bipolar logic 1960 s Intel 4004 processor

Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced.

Unit 1 Basic MOS Technology Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced. Levels of Integration:- i) SSI:-

NAME: Last First Signature

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT

EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02

EE 5611 Introduction to Microelectronic Technologies Fall 2014 Thursday, September 04, 2014 Lecture 02 1 Lecture Outline Review on semiconductor materials Review on microelectronic devices Example of microelectronic

Layers. Layers. Layers. Transistor Manufacturing COMP375 1

Layers VLSI COMP370 Intro to Computer Architecture t Applications Middleware other CS classes High level languages Machine Language Microcode Logic circuits Gates Transistors Silicon structures Layers

Department of Electrical Engineering IIT Madras

Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or

CHAPTER FORMULAS & NOTES

Formulae For u SEMICONDUCTORS By Mir Mohammed Abbas II PCMB 'A' 1 Important Terms, Definitions & Formulae CHAPTER FORMULAS & NOTES 1 Intrinsic Semiconductor: The pure semiconductors in which the electrical

The performance of AM and FM receivers. Editor: Xuanfeng Li Teacher: Prof. Xiliang Luo

The performance of AM and FM receivers Editor: Xuanfeng Li Teacher: Prof. Xiliang Luo The performance of AM receivers using Envelop Detection In a full AM signal, both sidebands and the carrier wave are

EJERCICIOS DE COMPONENTES ELECTRÓNICOS. 1 er cuatrimestre

EJECICIOS DE COMPONENTES ELECTÓNICOS. 1 er cuatrimestre 2 o Ingeniería Electrónica Industrial Juan Antonio Jiménez Tejada Índice 1. Basic concepts of Electronics 1 2. Passive components 1 3. Semiconductors.

If You Give A Mouse A Letter He ll Want The Whole Alphabet By

If You Give A Mouse A Letter He ll Want The Whole Alphabet By a TeachWithMe.com A If you give a mouse an A he will want a Bb. AAAA aaaa B If you give a mouse an B he will want a Cc. BBBB bbbb C If you

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;

Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known

PHYS 3050 Electronics I

PHYS 3050 Electronics I Chapter 4. Semiconductor Diodes and Transistors Earth, Moon, Mars, and Beyond Dr. Jinjun Shan, Associate Professor of Space Engineering Department of Earth and Space Science and

Digital Integrated Circuits A Design Perspective. The Devices. Digital Integrated Circuits 2nd Devices

Digital Integrated Circuits A Design Perspective The Devices The Diode The diodes are rarely explicitly used in modern integrated circuits However, a MOS transistor contains at least two reverse biased

CMOS Technology. 1. Why CMOS 2. Qualitative MOSFET model 3. Building a MOSFET 4. CMOS logic gates. Handouts: Lecture Slides. metal ndiff.

CMOS Technology 1. Why CMOS 2. Qualitative MOSFET model 3. Building a MOSFET 4. CMOS logic gates poly pdiff metal ndiff Handouts: Lecture Slides L03 - CMOS Technology 1 Building Bits from Atoms V in V

Semiconductor Diodes

Semiconductor Diodes A) Motivation and Game Plan B) Semiconductor Doping and Conduction C) Diode Structure and I vs. V D) Diode Circuits Reading: Schwarz and Oldham, Chapter 13.1-13.2 Motivation Digital

Design cycle for MEMS

Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor

EDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- ", Raj Kamal, 1

EDC UNIT IV- Transistor and FET Characteristics Lesson-9: JFET and Construction of JFET 2008 EDC Lesson 9- ", Raj Kamal, 1 1. Transistor 2008 EDC Lesson 9- ", Raj Kamal, 2 Transistor Definition The transferred-resistance

SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET

SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change

ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices

ECE 5745 Complex Digital ASIC Design Topic 2: CMOS Devices Christopher Batten School of Electrical and Computer Engineering Cornell University http://www.csl.cornell.edu/courses/ece5950 Simple Transistor

problem grade total

Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo Name: Recitation: November 16, 2005 Quiz #2 problem grade 1 2 3 4 total General guidelines (please read carefully before starting):

EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng

EE4800 CMOS Digital IC Design & Analysis Lecture 1 Introduction Zhuo Feng 1.1 Prof. Zhuo Feng Office: EERC 730 Phone: 487-3116 Email: zhuofeng@mtu.edu Class Website http://www.ece.mtu.edu/~zhuofeng/ee4800fall2010.html

Digital Integrated Circuits EECS 312

14 12 10 8 6 Fujitsu VP2000 IBM 3090S Pulsar 4 IBM 3090 IBM RY6 CDC Cyber 205 IBM 4381 IBM RY4 2 IBM 3081 Apache Fujitsu M380 IBM 370 Merced IBM 360 IBM 3033 Vacuum Pentium II(DSIP) 0 1950 1960 1970 1980

PHYSICAL STRUCTURE OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag

PHYSICAL STRUCTURE OF CMOS INTEGRATED CIRCUITS Dr. Mohammed M. Farag Outline Integrated Circuit Layers MOSFETs CMOS Layers Designing FET Arrays EE 432 VLSI Modeling and Design 2 Integrated Circuit Layers

Homework Assignment 09

Question 1 (2 points each unless noted otherwise) Homework Assignment 09 1. For SPICE, Explain very briefly the difference between the multiplier M and Meg, as in a resistor has value 2M versus a resistor

Lecture 0: Introduction

Lecture 0: Introduction Introduction Integrated circuits: many transistors on one chip. Very Large Scale Integration (VLSI): bucketloads! Complementary Metal Oxide Semiconductor Fast, cheap, low power

Notes. (Subject Code: 7EC5)

COMPUCOM INSTITUTE OF TECHNOLOGY & MANAGEMENT, JAIPUR (DEPARTMENT OF ELECTRONICS & COMMUNICATION) Notes VLSI DESIGN NOTES (Subject Code: 7EC5) Prepared By: MANVENDRA SINGH Class: B. Tech. IV Year, VII

Three Terminal Devices

Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI

1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward

CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34

CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials

Downloaded from

SOLID AND SEMICONDUCTOR DEVICES (EASY AND SCORING TOPIC) 1. Distinction of metals, semiconductor and insulator on the basis of Energy band of Solids. 2. Types of Semiconductor. 3. PN Junction formation

Lecture # 23 Diodes and Diode Circuits. A) Basic Semiconductor Materials B) Diode Current and Equation C) Diode Circuits

EECS 42 ntro. Digital Electronics, Fall 2003 EECS 42 ntroduction to Digital Electronics Lecture # 23 Diodes and Diode Circuits A) Basic Semiconductor Materials B) Diode Current and Equation C) Diode Circuits

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.

UNIT-I FIELD EFFECT TRANSISTOR 1. Explain about the Field Effect Transistor and also mention types of FET s. The Field Effect Transistor, or simply FET however, uses the voltage that is applied to their

CMOS Digital Integrated Circuits Lec 2 Fabrication of MOSFETs

CMOS Digital Integrated Circuits Lec 2 Fabrication of MOSFETs 1 CMOS Digital Integrated Circuits 3 rd Edition Categories of Materials Materials can be categorized into three main groups regarding their

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET

Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage

EE 330 Lecture 7. Design Rules. IC Fabrication Technology Part 1

EE 330 Lecture 7 Design Rules IC Fabrication Technology Part 1 Review from Last Time Technology Files Provide Information About Process Process Flow (Fabrication Technology) Model Parameters Design Rules

FABRICATION OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag

FABRICATION OF CMOS INTEGRATED CIRCUITS Dr. Mohammed M. Farag Outline Overview of CMOS Fabrication Processes The CMOS Fabrication Process Flow Design Rules Reference: Uyemura, John P. "Introduction to

Lecture 6 Optoelectronic Devices

EE 471: Transport Phenomena in Solid State Devices Spring 2018 Lecture 6 Optoelectronic Devices Bryan Ackland Department of Electrical and Computer Engineering Stevens Institute of Technology Hoboken,

Electronic Devices 1. Current flowing in each of the following circuits A and respectively are: (Circuit 1) (Circuit 2) 1) 1A, 2A 2) 2A, 1A 3) 4A, 2A 4) 2A, 4A 2. Among the following one statement is not

ELEC351 Lecture Notes Set 1

ELEC351 Lecture Notes Set 1 There is a tutorial on Monday September 10! You will do the first workshop problem in the tutorial. Bring a calculator. The course web site is: www.ece.concordia.ca/~trueman/web_page_351.htm

EE70 - Intro. Electronics

EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth

Layers. Layers. Layers. Transistor Manufacturing COMP375 1

VLSI COMP375 Computer Architecture Middleware other CS classes Machine Language Microcode Logic circuits Transistors Middleware Machine Language - earlier Microcode Logic circuits Transistors Middleware

Electronic Circuits I. Instructor: Dr. Alaa Mahmoud

Electronic Circuits I Instructor: Dr. Alaa Mahmoud alaa_y_emam@hotmail.com Chapter 27 Diode and diode application Outline: Semiconductor Materials The P-N Junction Diode Biasing P-N Junction Volt-Ampere

ECE 340 Lecture 37 : Metal- Insulator-Semiconductor FET Class Outline:

ECE 340 Lecture 37 : Metal- Insulator-Semiconductor FET Class Outline: Metal-Semiconductor Junctions MOSFET Basic Operation MOS Capacitor Things you should know when you leave Key Questions What is the

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and

Efficiency of Buck Converter

Switching Regulator IC Series Efficiency of Buck Converter Switching regulators are known as being highly efficient power sources. To further improve their efficiency, it is helpful to understand the basic

Electronic devices-i. Difference between conductors, insulators and semiconductors

Electronic devices-i Semiconductor Devices is one of the important and easy units in class XII CBSE Physics syllabus. It is easy to understand and learn. Generally the questions asked are simple. The unit

Design Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness

MIT International Journal of Electronics and Communication Engineering, Vol. 4, No. 2, August 2014, pp. 81 85 81 Design Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness Alpana

THE METAL-SEMICONDUCTOR CONTACT

THE METAL-SEMICONDUCTOR CONTACT PROBLEM 1 To calculate the theoretical barrier height, built-in potential barrier, and maximum electric field in a metal-semiconductor diode for zero applied bias. Consider

420 Intro to VLSI Design

Dept of Electrical and Computer Engineering 420 Intro to VLSI Design Lecture 0: Course Introduction and Overview Valencia M. Joyner Spring 2005 Getting Started Syllabus About the Instructor Labs, Problem

+1 (479)

Introduction to VLSI Design http://csce.uark.edu +1 (479) 575-6043 yrpeng@uark.edu Invention of the Transistor Vacuum tubes ruled in first half of 20th century Large, expensive, power-hungry, unreliable

Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1. Topics

Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1 Topics What is semiconductor Basic semiconductor devices Basics of IC processing CMOS technologies 2006/9/27 2 1 What is Semiconductor

EE301 Electronics I , Fall

EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials

EFM Ec. a) Sketch the electrostatic potential inside the semiconductor as a function of position.

1.The energy band diagram for an ideal x o =.2um MOS-C operated at T=300K is shown below. Note that the applied gate voltage causes band bending in the semiconductor such that E F =E i at the Si-SiO2 interface.

Digital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology

K. N. Toosi University of Technology Chapter 7. Field-Effect Transistors By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology http://wp.kntu.ac.ir/faradji/digitalelectronics.htm

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Lecture outline Historical introduction Semiconductor devices overview Bipolar Junction Transistor (BJT) Field

Atoms and Valence Electrons

Technology Overview Atoms and Valence Electrons Conduc:on and Valence Bands Energy Band Gaps in Materials Band gap N- type and P- type Doping Silicon and Adjacent Atoms PN Junc:on Forward Biased PN Junc:on

Reading. Lecture 17: MOS transistors digital. Context. Digital techniques:

Reading Lecture 17: MOS transistors digital Today we are going to look at the analog characteristics of simple digital devices, 5. 5.4 And following the midterm, we will cover PN diodes again in forward

Solid State Device Fundamentals

Solid State Device Fundamentals 4.4. Field Effect Transistor (MOSFET) ENS 463 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 4N101b 1 Field-effect transistor (FET)

INTRODUCTION: Basic operating principle of a MOSFET:

INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying

Chapter 3 Basics Semiconductor Devices and Processing

Chapter 3 Basics Semiconductor Devices and Processing 1 Objectives Identify at least two semiconductor materials from the periodic table of elements List n-type and p-type dopants Describe a diode and

CS/ECE 5710/6710. Composite Layout

CS/ECE 5710/6710 Introduction to Layout Inverter Layout Example Layout Design Rules Composite Layout Drawing the mask layers that will be used by the fabrication folks to make the devices Very different

MOSFETS: Gain & non-linearity

MOFET: ain & non-linearity source gate Polysilicon wire Heavily doped (n-type or p-type) diffusions W Inter-layer io 2 insulation Very thin (

Field Effect Transistors (npn)

Field Effect Transistors (npn) gate drain source FET 3 terminal device channel e - current from source to drain controlled by the electric field generated by the gate base collector emitter BJT 3 terminal

ECE4902 B2015 HW Set 1

ECE4902 B2015 HW Set 1 Due in class Tuesday November 3. To make life easier on the graders: Be sure your NAME and ECE MAILBOX NUMBER are prominently displayed on the upper right of what you hand in. When

APPLICATION TRAINING GUIDE

APPLICATION TRAINING GUIDE Basic Semiconductor Theory Semiconductor is an appropriate name for the device because it perfectly describes the material from which it's made -- not quite a conductor, and

Outcomes. Spiral 1 / Unit 8. DeMorgan s Theorem DEMORGAN'S THEOREM. Transistor Implementations CMOS Logic Gates

18.1 18.2 Spiral 1 / Unit 8 Transistor Implementations MOS Logic Gates Mark Redekopp Outcomes I know the difference between combinational and sequential logic and can name examples of each. I understand

EECS150 - Digital Design Lecture 15 - CMOS Implementation Technologies. Overview of Physical Implementations

EECS150 - Digital Design Lecture 15 - CMOS Implementation Technologies Mar 12, 2013 John Wawrzynek Spring 2013 EECS150 - Lec15-CMOS Page 1 Overview of Physical Implementations Integrated Circuits (ICs)

EECS150 - Digital Design Lecture 9 - CMOS Implementation Technologies

EECS150 - Digital Design Lecture 9 - CMOS Implementation Technologies Feb 14, 2012 John Wawrzynek Spring 2012 EECS150 - Lec09-CMOS Page 1 Overview of Physical Implementations Integrated Circuits (ICs)

Chapter 2 : Semiconductor Materials & Devices (II) Feb

Chapter 2 : Semiconductor Materials & Devices (II) 1 Reference 1. SemiconductorManufacturing Technology: Michael Quirk and Julian Serda (2001) 3. Microelectronic Circuits (5/e): Sedra & Smith (2004) 4.

UNIT III VLSI CIRCUIT DESIGN PROCESSES. In this chapter we will be studying how to get the schematic into stick diagrams or layouts.

UNIT III VLSI CIRCUIT DESIGN PROCESSES In this chapter we will be studying how to get the schematic into stick diagrams or layouts. MOS circuits are formed on four basic layers: N-diffusion P-diffusion

INTERNATIONAL JOURNAL OF APPLIED ENGINEERING RESEARCH, DINDIGUL Volume 1, No 3, 2010

Low Power CMOS Inverter design at different Technologies Vijay Kumar Sharma 1, Surender Soni 2 1 Department of Electronics & Communication, College of Engineering, Teerthanker Mahaveer University, Moradabad

Discuss the basic structure of atoms Discuss properties of insulators, conductors, and semiconductors

Discuss the basic structure of atoms Discuss properties of insulators, conductors, and semiconductors Discuss covalent bonding Describe the properties of both p and n type materials Discuss both forward

Semiconductors, ICs and Digital Fundamentals

Semiconductors, ICs and Digital Fundamentals The Diode The semiconductor phenomena. Diode performance with ac and dc currents. Diode types: General purpose LED Zener The Diode The semiconductor phenomena

value of W max for the device. The at band voltage is -0.9 V. Problem 5: An Al-gate n-channel MOS capacitor has a doping of N a = cm ;3. The oxi

Prof. Jasprit Singh Fall 2001 EECS 320 Homework 10 This homework is due on December 6 Problem 1: An n-type In 0:53 Ga 0:47 As epitaxial layer doped at 10 16 cm ;3 is to be used as a channel in a FET. A

Q1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET).

Q. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET). Answer: N-Channel Junction Field Effect Transistor (JFET) Construction: Drain(D)

Device Technologies. Yau - 1

Device Technologies Yau - 1 Objectives After studying the material in this chapter, you will be able to: 1. Identify differences between analog and digital devices and passive and active components. Explain

Lesson 5. Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors-

Lesson 5 Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors- Types and Connections Semiconductors Semiconductors If there are many free

Topic 3. CMOS Fabrication Process

Topic 3 CMOS Fabrication Process Peter Cheung Department of Electrical & Electronic Engineering Imperial College London URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk Lecture 3-1 Layout of a Inverter

PAPER SOLUTION_DECEMBER_2014_VLSI_DESIGN_ETRX_SEM_VII Prepared by Girish Gidaye

Q1a) The MOS System under External Bias Depending on the polarity and the magnitude of V G, three different operating regions can be observed for the MOS system: 1) Accumulation 2) Depletion 3) Inversion

Basic Electronics. Introductory Lecture Course for. Technology and Instrumentation in Particle Physics Chicago, Illinois June 9-14, 2011

Basic Electronics Introductory Lecture Course for Technology and Instrumentation in Particle Physics 2011 Chicago, Illinois June 9-14, 2011 Presented By Gary Drake Argonne National Laboratory Session 3

EECS 151/251A Spring 2019 Digital Design and Integrated Circuits. Instructors: Wawrzynek. Lecture 8 EE141

EECS 151/251A Spring 2019 Digital Design and Integrated Circuits Instructors: Wawrzynek Lecture 8 EE141 From the Bottom Up IC processing CMOS Circuits (next lecture) EE141 2 Overview of Physical Implementations

Learning Outcomes. Spiral 2-6. Current, Voltage, & Resistors DIODES

26.1 26.2 Learning Outcomes Spiral 26 Semiconductor Material MOS Theory I underst why a diode conducts current under forward bias but does not under reverse bias I underst the three modes of operation

QUESTION BANK EC6201 ELECTRONIC DEVICES UNIT I SEMICONDUCTOR DIODE PART A. It has two types. 1. Intrinsic semiconductor 2. Extrinsic semiconductor.

FATIMA MICHAEL COLLEGE OF ENGINEERING & TECHNOLOGY Senkottai Village, Madurai Sivagangai Main Road, Madurai - 625 020. [An ISO 9001:2008 Certified Institution] QUESTION BANK EC6201 ELECTRONIC DEVICES SEMESTER:

Semiconductor Devices

Semiconductor Devices - 2014 Lecture Course Part of SS Module PY4P03 Dr. P. Stamenov School of Physics and CRANN, Trinity College, Dublin 2, Ireland Hilary Term, TCD 3 th of Feb 14 MOSFET Unmodified Channel

Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits Junction Field-effect Transistors Dr. Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of the Precedent Lecture Explain the Operation Class A Power

MOS Transistor Theory

MOS Transistor Theory So far, we have viewed a MOS transistor as an ideal switch (digital operation) Reality: less than ideal EE 261 Krish Chakrabarty 1 MOS Transistor Theory Study conducting channel between

Layout of a Inverter. Topic 3. CMOS Fabrication Process. The CMOS Process - photolithography (2) The CMOS Process - photolithography (1) v o.

Layout of a Inverter Topic 3 CMOS Fabrication Process V DD Q p Peter Cheung Department of Electrical & Electronic Engineering Imperial College London v i v o Q n URL: www.ee.ic.ac.uk/pcheung/ E-mail: p.cheung@ic.ac.uk

EECE 481. MOS Basics Lecture 2

EECE 481 MOS Basics Lecture 2 Reza Molavi Dept. of ECE University of British Columbia reza@ece.ubc.ca Slides Courtesy : Dr. Res Saleh (UBC), Dr. D. Sengupta (AMD), Dr. B. Razavi (UCLA) 1 PN Junction and

Lecture 2 p-n junction Diode characteristics. By Asst. Prof Dr. Jassim K. Hmood

Electronic I Lecture 2 p-n junction Diode characteristics By Asst. Prof Dr. Jassim K. Hmood THE p-n JUNCTION DIODE The pn junction diode is formed by fabrication of a p-type semiconductor region in intimate