IRF6614PbF IRF6614TRPbF DirectFET Power MOSFET
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- Rachel Lynne Carr
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1 Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHS Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l ual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques P IRF6614PbF IRF6614TRPbF irectfet Power MOSFET Typical values (unless otherwise specified) V SS V GS R S(on) R S(on) 40V max ±20V max 5.9mΩ@ V 7.1mΩ@ 4.5V Q g tot Q gd Q gs2 Q rr Q oss V gs(th) 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V irectfet ISOMETRIC ST pplicable irectfet Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT escription The IRF6614PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency C-C converters that power the latest generation of processors operating at higher frequencies. The IRF6614PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket. bsolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 40 V V GS Gate-to-Source Voltage ±20 T = 25 C Continuous rain Current, V V e 12.7 T = 70 C Continuous rain Current, V V e.1 T C = 25 C Continuous rain Current, V V f 55 I M Pulsed rain Current g 2 E S Single Pulse valanche Energy h 22 mj I R valanche Currentg I = 12.7 I =.2 V S = 32V VS= 20V T J = 125 C T J = 25 C V GS, Gate-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (rain) of part. Click on this section to link to the irectfet Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on 1 in. square Cu board, steady state. Starting T J = 25 C, L = 0.43mH, R G = 25Ω, I S = /5/06
2 IRF6614PbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS rain-to-source Breakdown Voltage 40 V V GS = 0V, I = 250µ ΒV SS / T J Breakdown Voltage Temp. Coefficient 38 mv/ C Reference to 25 C, I = 1m R S(on) Static rain-to-source On-Resistance mω V GS = V, I = 12.7 i V GS = 4.5V, I =.2 i V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ V GS(th) / T J Gate Threshold Voltage Coefficient -5.5 mv/ C I SS rain-to-source Leakage Current 1.0 µ 150 I GSS Gate-to-Source Forward Leakage 0 n Gate-to-Source Reverse Leakage -0 gfs Forward Transconductance 71 S V S = 32V, V GS = 0V V S = 32V, V GS = 0V, T J = 125 C V GS = 20V V GS = -20V V S = V, I =.2 Q g Total Gate Charge Q gs1 Pre-Vth Gate-to-Source Charge 5.9 Q gs2 Post-Vth Gate-to-Source Charge 1.4 nc Q gd Gate-to-rain Charge 6.0 V S = 20V V GS = 4.5V I =.2 Q godr Gate Charge Overdrive 5.7 See Fig. 15 Q sw Switch Charge (Q gs2 Q gd ) 7.4 Q oss Output Charge 9.5 nc V S = 16V, V GS = 0V R G Gate Resistance Ω t d(on) Turn-On elay Time 13 t r Rise Time 27 t d(off) Turn-Off elay Time 18 ns V = 20V, V GS = 4.5Vi I =.2 Clamped Inductive Load t f Fall Time 3.6 C iss Input Capacitance 2560 C oss Output Capacitance 370 pf C rss Reverse Transfer Capacitance 200 iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 53 (Body iode) I SM Pulsed Source Current 2 (Body iode)g V S iode Forward Voltage 1.0 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc V GS = 0V V S = 20V ƒ = 1.0MHz MOSFET symbol Conditions showing the integral reverse p-n junction diode. T J = 25 C, I S =.2, V GS = 0V i T J = 25 C, I F =.2 di/dt = 0/µs i Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. 2
3 bsolute Maximum Ratings Thermal Response ( Z thj ) = SINGLE PULSE ( THERML RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-mbient IRF6614PbF Parameter Max. Units = 25 C Power issipation e 2.1 W = 70 C Power issipation e 1.4 C = 25 C Power issipation f 42 T P Peak Soldering Temperature 270 C T J Operating Junction and -40 to 150 Storage Temperature Range T STG Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-mbient el 58 R θj Junction-to-mbient jl 12.5 R θj Junction-to-mbient kl 20 C/W R θjc Junction-to-Case fl 3.0 R θj-pcb Junction-to-PCB Mounted 1.0 Linear erating Factor e W/ C 1E-006 1E Notes: ƒ Surface mounted on 1 in. square Cu board, steady state. T C measured with thermocouple incontact with top (rain) of part. ˆ Used double sided cooling, mounting pad with large heatsink. t 1, Rectangular Pulse uration (sec) R 4 R 4 τ 4 τ 4 R 5 R 5 τ 5 τ 5 τ C τ Ri ( C/W) τi (sec) Notes: 1. uty Factor = t1/t2 2. Peak Tj = P dm x Zthja Tc Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š R θ is measured at T J of approximately 90 C. ƒ Surface mounted on 1 in. square Cu board (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3
4 C, Capacitance (pf) Typical R S(on) (Normalized) I, rain-to-source Current () I, rain-to-source Current () IRF6614PbF 00 0 VGS TOP V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V BOTTOM 2.3V 00 0 VGS TOP V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V BOTTOM 2.3V 1 2.3V µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) Fig 4. Typical Output Characteristics 1 2.3V 60µs PULSE WITH Tj = 150 C V S, rain-to-source Voltage (V) Fig 5. Typical Output Characteristics I, rain-to-source Current (Α) T J = 150 C T J = 25 C T J = -40 C I = 12.7 V GS = V V S = 15V 60µs PULSE WITH V GS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature 4000 V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd Ciss Typical R S(on) (mω) 30 T = 25 C V GS = 3.0V V GS = 3.5V V GS = 4.0V V GS = 4.5V V GS = 5.0V V GS = V 00 Coss 0 Crss V S, rain-to-source Voltage (V) I, rain Current () Fig 8. Typical Capacitance vs.rain-to-source Voltage Fig 9. Typical On-Resistance Vs. rain Current and Gate Voltage 4
5 E S, Single Pulse valanche Energy (mj) I, rain Current () V GS(th) Gate threshold Voltage (V) I, rain-to-source Current () I S, Reverse rain Current () T J = 150 C T J = 25 C T J = -40 C 1.0 V GS = 0V V S, Source-to-rain Voltage (V) Fig. Typical Source-rain iode Forward Voltage 00 0 IRF6614PbF OPERTION IN THIS RE LIMITE BY R S (on) C msec 0µsec 1msec 1 Tc = 25 C Tj = 175 C Single Pulse V S, rain-tosource Voltage (V) Fig11. Maximum Safe Operating rea I = 250µ T J, Junction Temperature ( C) T J, Temperature ( C ) Fig 12. Maximum rain Current vs. Case Temperature 0 80 Fig 13. Typical Threshold Voltage vs. Junction Temperature I TOP BOTTOM Starting T J, Junction Temperature ( C) Fig 14. Maximum valanche Energy Vs. rain Current 5
6 IRF6614PbF Vds Id Vgs 0 1K UT L VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform V (BR)SS 15V tp V S L RIVER VR GS G 20V tp.u.t I S 0.01Ω - V I S Fig 16b. Unclamped Inductive Test Circuit Fig 16c. Unclamped Inductive Waveforms L V S V - V S 90%.U.T % V GS V GS Pulse Width < 1µs uty Factor < 0.1% t d(on) t r t d(off) t f Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms 6
7 IRF6614PbF -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 18. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs irectfet Substrate and PCB Layout, ST Outline (Small Size Can, T-esignation). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G = GTE = RIN S = SOURCE G S S 7
8 IRF6614PbF irectfet Outline imension, ST Outline (Small Size Can, T-esignation). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. irectfet Part Marking COE B C E F G H J K L M R P IMENSIONS METRIC IMPERIL
9 irectfet Tape & Reel imension (Showing component orientation). IRF6614PbF NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6614TRPBF). For 00 parts on 7" reel, order IRF6614TR1PBF COE B C E F G H REEL IMENSIONS STNR OPTION (QTY 4800) TR1 OPTION (QTY 00) METRIC IMPERIL METRIC IMPERIL Loaded Tape Feed irection COE B C E F G H IMENSIONS METRIC IMPERIL ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.05/06 9
10 Note: For the most current drawings please refer to the IR website at:
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More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
P-900 IRF7809V N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % Tested for R
More informationIRLMS6702PbF HEXFET Power MOSFET
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) PChannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationIRF7821PbF. HEXFET Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRF5852. HEXFET Power MOSFET V DSS R DS(on) max (W) I D
l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
More informationAUTOMOTIVE GRADE. Outline and Substrate Outline SB SC M2 M4 L4 L6 L8
UTOMOTIVE RE dvanced Process Technology Optimized for utomotive Motor rive, C-C and other Heavy Load pplications Exceptionally Small Footprint and Low Profile High Power ensity Low Parasitic Parameters
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
Generation V Technology l l Ultra Low OnResistance l PChannel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching escription Fifth Generation HEXFETs from International
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationAUTOMOTIVE GRADE V (BR)DSS. Q g (typical) Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description
UTOMOTIVE RE dvanced Process Technology Optimized for Class udio mplifier and High Speed Switching pplications Low Rds(on) for Improved Efficiency Low Qg for Better TH and Improved Efficiency Low Qrr for
More informationV DSS R DS(on) max I D. 20V GS = 10V 8.9A. 71 P A = 25 C Power Dissipation 2.0 P A = 70 C Power Dissipation Linear Derating Factor
Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box PD - 95858A IRF895 HEXFET Power MOSFET V DSS R DS(on) max I D 20V 8.3m:@V GS = V 8.9A
More informationAUTOMOTIVE GRADE V (BR)DSS. Q g (typical) Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description
UTOMOTIVE RE dvanced Process Technology Optimized for Class udio mplifier pplications Low Rds(on) for Improved Efficiency Low Qg for Better TH and Improved Efficiency Low Qrr for Better TH and Lower EMI
More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationAUTOMOTIVE GRADE. Outline and Substrate Outline SB SC M2 M4 L4 L6 L8
UTOMOTIVE RE Logic Level dvanced Process Technology Optimized for utomotive C-C, Motor rive and other Heavy Load pplications Exceptionally Small Footprint and Low Profile High Power ensity Low Parasitic
More informationV DSS R DS(on) max Qg 30V GS = 10V 5.4nC
PD - 96227B Applications l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes l System/load switch Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More information120 P C = 25 C Power Dissipation 360 P C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97B IRFP4332PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
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P-9525 IRF78VPbF IRF78VPbF N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications %
More informationV DSS R DS(on) max Qg. 30V 3.3m: 34nC
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationIRL8113 IRL8113S IRL8113L
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power V DSS PD - 95821 IRL8113 IRL8113S IRL8113L HEXFET Power MOSFET R DS(on) max Qg (Typ.) 30V 6.0m: 23nC Benefits l l
More informationIRFR3704Z IRFU3704Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRFI4212H-117P. Description. Key Parameters g V DS 100 V R DS(ON) 10V 58 m: Q g typ. 12 nc Q sw typ. 6.9 nc R G(int) typ. 3.
DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier
More informationV DSS R DS(on) max Qg 30V GS = 10V 20nC
Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low R DS(ON) at 4.5V V GS l
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationN-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET SO-8
l Generation Technology l Ultra Low OnResistance l ual N and P Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l LeadFree escription Fifth Generation HEXFETs
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P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
l Generation V Technology l Ultra Low On-Resistance l ual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs
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Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
More informationLower Conduction Losses
PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
P-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
HEXFET Power MOFET P - 9530 IRF7403PbF l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching
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Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S PD -97358
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PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
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P 9633 HEXFET Power MOFET V 3 V R (on) max (@V G = V) 4.6 mω Q g (typical) 32 nc I (@T A = 25 C) A 5 6 7 8 G 4 3 2 G 3mm x 3mm PQFN Applications l ystem/load switch Features and Benefits Features Benefits
More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
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PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
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P-95214A EXFET Power MOSFET for C-C Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Lead-Free S S 1 2 8 7 A escription This
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P- 94036B SMPS MOSFET IRF747 Applications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor
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