Index (CMP) 319, CMOS, see complementary metal-oxide semiconductor CMOS inverters 374 CMP, see chemical mechanical
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1 Index α-series 75, 77, 86, active materials Anderson localization 143, 145, 147, 149 APDs, see avalanche photodiode detectors aperiodic photonic structures 8, 58 aperiodic structures, rotational symmetry in Auger recombination avalanche photodiode detectors (APDs) 217, 291 Bessel order, azimuthal 106, biexcitons 254, , 263 biosensing , , , , 402, 404, , 410, 412 label-free , 412 ring resonator 399, biosensors , 396, 412 label-free 386, 389, 412 bipolar junction transistor (BJT) 355 BJT, see bipolar junction transistor Brillouin zone 19 21, 66, CCD, see charge-coupled device CEODF, see cavity-enhanced optical dipole force charge-coupled device (CCD) chemical beam epitaxy (CBE) 168, 179 chemical mechanical polishing (CMP) 319, 321 chemical vapor deposition (CVD) 407 CMOS, see complementary metal-oxide semiconductor CMOS inverters 374 CMP, see chemical mechanical polishing colloidal quantum dots , , 261, , 270, 272, 275, 277, , 290 complementary metal-oxide semiconductor (CMOS) 3, 39, 168, , 326, 374 course wavelength division multiplexing (CWDM) 328, 330 CVD, see chemical vapor deposition CWDM, see course wavelength division multiplexing cavity-enhanced optical dipole force (CEODF) , 228 CBE, see chemical beam epitaxy dark state 259, DBRs, see distributed Bragg reflectors
2 426 Index defect modes 22 23, 25, 29, 31, 33, 83 DFB grating DFB laser 316, 320, 332, dielectric cylinders 82, 89, disordered photonics distributed Bragg reflectors (DBRs) 11, 14 15, 21, 23, 38, , 311, 317, , 327, 331, 338 Dyson equation , 140, 142 EAMs, see electroabsorption modulators EBIC, see electron-beam-induced current EBL, see electron beam lithography electroabsorption modulators (EAMs) 311, , 344 electromagnetic field 2, 8, 20, 42, 103, 133, , , 216, 294, 316 electromagnetic waves 12, 127, 130, 132, 139, , 145, 315, 389 electron acceptors 367 electron-beam-induced current (EBIC) 202 electron beam lithography (EBL) 101, , 338 electron/hole injectors 241 electron mobility , , 189, 193, 359 electronic wavefunctions 18, 242 entangled photon sources (EPSs) 241, 259, 294 EPSs, see entangled photon sources EQEs, see external quantum efficiencies external quantum efficiencies (EQEs) , FDTD, see finite-difference time domain FEM, see finite-element method FET, see field-effect transistor FET, InAs-based nanowire 189, 194 FET lateral gate nanowire 172, nanowire 171, 176, , 188, 191, organic 352, , , , 368, 370, organic thin-film 351, 356, 368, 373 p-channel 367, 374 single-crystal 359, 366, 372, 375 thin-film , FET devices , 364, 370, 372 organic , , 367, 373 FET film FHD, see Fourier Hankel decomposition field-effect mobility 356, 360 field-effect transistor (FET) , , , 189, 191, , 197, , , 368, 370, fine structure splitting (FSS) , 290 finite-difference time domain (FDTD) 23, 25, 96, 221, 229, finite-element method (FEM) 82, 171, 173, 222, 324 Fourier space 73, 76, 80, 101 Fourier transform 64, 99, 108 Fourier Hankel decomposition (FHD) ,
3 Index 427 fractional Fourier transformation (FRFT) free spectral range (FSR) 325, 327, FRFT, see fractional Fourier transformation FSR, see free spectral range FSS, see fine structure splitting high-contrast gratings (HCGs) high-electron-mobility transistor (HEMT) 166 HMDS, see hexamethyldisilazane hot-electron bolometers (HEBs) 164 hybrid lasers 319, 330, 332, 343 GA, see golden angle GA arrays 95 96, 98, 104 GA spiral 71 72, 74 78, 82 83, 86, 88 92, 97 98, 100, 102, 106, , 114 golden angle (GA) 68 73, 75 78, 82 83, 87, 92, , 113 graphene Green s function 82, 133, 135, , 141 free-space 134 retarded 134, group III V on silicon , 312, 314, 316, 318, 320, 322, 324, 326, 328, 330, 332, 334, 336, 338 HCG-VCSELs, see highcontrast-grating verticalcavity surface-emitting lasers HCGs see high-contrast gratings silicon patterning of 339 HEBs, see hot-electron bolometers HEMT, see high-electron-mobility transistor hexamethyldisilazane (HMDS) high-contrast-grating verticalcavity surface-emitting lasers (HCG-VCSELs) 311 III V materials 268, 273, 314, , 319 III V-on-silicon lasers 315, 317, 319, 321, 323, 325, 327, 329, 331, 333, 335 III V photodiode 332 III V waveguide , , 333, 337 InAs nanowires , 182, 184, , 194 laser excitation 261, LDOS, see local density of states LEDs, see light-emitting diodes light amplification 313, 317, , 325, light-emitting diodes (LEDs) 81, 186, , , 277 light trapping 95, 151, light-trapping mechanism for photovoltaic applications local density of states (LDOS) 62, 82 83, 88, 92 localized surface plasmon (LSP) 94, 97 LSP, see localized surface plasmon MBE, see molecular beam epitaxy mechanical amplification 213,
4 428 Index mechanical modes 211, , 222, , , metal-organic chemical vapor deposition (MOCVD) 280 metal-oxide semiconductor field-effect transistor (MOSFET) 166, 353 microfluidics 392, , 408, MOCVD, see metal-organic chemical vapor deposition molecular beam epitaxy (MBE) , 280 MOSFET, see metal-oxide semiconductor field-effect transistor multifractal analysis 84, 86, 88 multifractal spectra 85, 87 nano-optomechanical oscillators nanowire FET detectors nanowire transistors 188, 191 nanowires, heterostructured 180, 203, 205 NEP, see noise-equivalent power noise-equivalent power (NEP) , 188, 196, OAM, see orbital angular momentum off-stoichiometric thiol-ene (OSTE) 399, 408, 410, 412 OLEDs, see organic light-emitting diodes optical microcavities 290, optoelectronic devices 5, 240, 243, 248, 267 nanostructure-based 8 optomechanics 3, 8, , 213 orbital angular momentum (OAM) 8, 57, 74, 103, 106, 110, 112 organic light-emitting diodes (OLEDs) 241, 275, organic semiconductors application of , 354, 356, 358, 360, 362, 364, 366, 368, 370, 372, 374 organic transistors OSTE, see off-stoichiometric thiol-ene PbS quantum dots 272, PCs, see photonic crystals PDMS, see polydimethylsiloxane PECVD, see plasma-enhanced chemical vapor deposition pentacene , 369 phase propagation constant 401, phenacene , , photocurrent 174, , 335 photodetectors 97, 268, 276, 291, 309, 320, 335, 344 photodiode 335 photolithography 399, 409, 411 photonic chips 398 photonic crystals (PCs) 8, 11 16, 18, 20, 22, 24 28, 30, 32, 34, 36, 38 48, 145, , 214, 216 photonic crystals 2.5-dimensional 38 39, 41 three-dimensional 43 two-dimensional 25, 27 photonic heterostructures 42, 84 photonic integrated circuit (PIC) 6 7, 13, 29, 31, 33, 44, 47, , 314, 343 photonic materials disordered , 156
5 Index 429 photonic modes 21, 23, 39 41, 146, 228 photonics integrated 5, 47 48, 272 microwave 270, 272 silicon-based 6, 309 siliconizing 318, 337 photopatterning photovoltaic devices 285 phyllotaxis physical vapor deposition 13, 39 physical vapor transport 359, 366 PIC, see photonic integrated circuit picene planar ring resonator sensors 393, 396 plasma-enhanced chemical vapor deposition (PECVD) 321, plasmonic arrays 95, PMMA, see poly(methyl methacrylate) poly(methyl methacrylate) (PMMA) 220, 267, , 407 polydimethylsiloxane (PDMS) 395, , protein biomarkers Purcell factor 24 QCL, see quantum cascade laser QD, see quantum dot QD-based optoelectronic devices QD LEDs 241, 274, 276, 278 QD Schottky devices quantum cascade laser (QCL) 163, 187, quantum dot (QD) , 205, , , , , recombination dynamics , 263, 265 self-assembled 241, , , 264, , , 290 single , 254, , 259, , , quantum dot photonics quantum light 241, 288, 290 quantum mechanical Schroedinger equation 17, 19, 21 quantum wells (QWs) 239, , 269, , 316, 325 quasicrystals 60 61, 63, 67, 72, 74 QWs, see quantum wells radio frequency 101, 217, 323 reactive ion etching (RIE) 101, 220, 319 RIE, see reactive ion etching ring resonator biosensors 392, , 398, 409 ring resonator sensor arrays 395 ring resonators 267, , , , , 412 planar 391, 393 SCH, see separate confinement heterostructure SDLs, see semiconductor disk lasers self-collimated beams semiconductor disk lasers (SDLs) 281 semiconductor nanostructures 247 semiconductor optical amplifiers (SOAs) 7, , 272, 314 separate confinement heterostructure (SCH) 323 Si MOSFETs , Si photonic chips
6 430 Index side-mode suppression ratio (SMSR) 322, 324, 326, 328, 330, 335, 341 silicon nitride 317, 408 silicon patterning silicon photonic chips 268, 312, 318, 343 silicon photonic sensors 410 silicon photonics 267, 309, 311, , 318, 337, 343, silicon waveguides 316, , 324, 329, 394 passive single-photon emission 290, 293 single-photon sources (SPSs) 241, 248, 259, , SLMs, see spatial light modulators SMSR, see side-mode suppression ratio SOAs, see semiconductor optical amplifiers solar cells 129, , 157, 266, 273, 276, , thin-film thin-film Si spatial Fourier spectrum 64 65, 72, 95 spatial light modulators (SLMs) 103 SPSs, see single-photon sources superconductivity 375 TCE, see transparent conducting electrode TCSPC, see time-correlated single-photon counting terahertz detection 163 time-correlated single-photon counting (TCSPC) 291 transparent conducting electrode (TCE) VCSEL, see vertical cavity surface emitting laser VCSEL photonics vertical cavity surface emitting laser (VCSEL) 14, 47, 281, 320, 332, , 341 Vogel spiral 69 70, 72 74, 76 78, 80 86, 89 91, 93, , aperiodic 64, 72, 75, 81, 116 Vogel spiral arrays 75 76, 82, 104 Vogel spiral arrays of nanoparticles 59, 73 Vogel spiral geometry 57, 59, 78, 110, 115 wavelength division multiplexers (WDMs) 37, 328, 395 WDMs, see wavelength division multiplexers whispering gallery 32, 42 43, 183, 197, 223, 394 ZrO 2 gate dielectric
7 Mastering such a complex subject requires a multidisciplinary approach and a solid knowledge of several topics. This book gives a broad overview of recent advances in several topical aspects of nanophotonics and nanoelectronics, keeping an eye on real applications of such technologies, and focuses on the possibilities created by advanced photon management strategies in optoelectronic devices. Starting from pure photonic systems, the book provides several examples in which the interaction between photonics and electronics is exploited to achieve faster, compact, and more efficient devices. A large number of figures and tables also support each chapter. This book constitutes a valuable resource for researchers, engineers, and professionals working on the development of optoelectronics. Paolo Bettotti is an assistant professor at the Nanoscience Laboratory of the University of Trento, Italy. He obtained his MSc in materials science from the University of Padova, Italy, and his PhD in physics from the University of Trento in 2002 and 2006, respectively. His research interests focus on the fabrication, functionalization, and characterization of porous nanomaterials for photonics and sensing applications. Nanodevices for Photonics and Electronics Photonics and electronics are endlessly converging into a single technology by exploiting the possibilities created by nanostructuring of materials and devices. It is expected that nextgeneration optoelectronic devices will show great improvements in terms of performance, flexibility, and energy consumption: the main limits of nanoelectronics will be overcome by using a photonics approach, while nanophotonics will become a mature technology, thanks to miniaturization strategies developed in microelectronics. Nanodevices for Photonics and Electronics Advances and Applications edited by Bettotti V463 ISBN Paolo Bettotti
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