rd IEEE International Semiconductor Laser Conference (ISLC 2012) San Diego, California, USA 7 10 October IEEE Catalog Number: ISBN:

Transcription

1 rd IEEE International Semiconductor Laser Conference (ISLC 2012) San Diego, California, USA 7 10 October 2012 IEEE Catalog Number: ISBN: CFP12SLC-PRT

2 Monday, October 8, 2012 PLE PLE1 Plenary Session Latest Performance of GaN-based Nonpolar/Semipolar Emitting Devices 1 PLE2 Mid-Infrared Quantum Cascade Lasers Combs for Spectroscopy 2 PLE3 Advances of VCSEL Photonics 4 MA MA1 Laser Integration CMOS Integrated Light Source for Interconnection 6 MA2 CMOS Compatible Planar Integration of Compact Semiconductor Laser Diodes with 8 Waveguides on Silicon MA3 Reliability of Hybrid III-V on Si Distributed Feedback Lasers 10 MA4 Theory of Laser Gain in a Ge-on-Si Laser 12 MA5 Variable Repetition Rate Monolithically Integrated Mode-Locked-Laser- 14 Modulator-MOPA Device MA6 InP Photonic Integrated Circuit with On-chip Monitors for Optical Beam Steering 16 MA7 Room-Temperature Continuous-Wave Operation of a 1.3-µm npn-algainas/inp 18 Transistor Laser MB MB1 Long-Wavelength Diodes & Cascade Lasers Sub-kHz Linewidth GaSb Semiconductor Diode LasersOperating Near 2 µm 20 MB2 Extending Lasing Wavelength on InP with GaAsSb/GaInAs Type-II Active Regions 22 MB3 Diode Lasers Operating in Spectral Range from 1.9 to 3.5 µm 24 MB4 Epitaxial-Side-Down-Mounted Interband Cascade Lasers 26 MB5 Room Temperature CW Operation of DFB Quantum Cascade Lasers with Wide 28 Wavelength Coverage near 5.2 µm MB6 Two-Dimensional Conduction-Band Engineering for PerformanceOptimization of 30 Quantum Cascade Lasers MB7 Watt-level Room Temperature Continuous-Wave Operation of Quantum Cascade 32 Lasers with?>10 µm MB8 Integrated Dual-Wavelength Semiconductor Laser Systems for Millimeter Wave 34 Generation Tuesday, October 9, 2012 TuA Tunable and High Performance Lasers TuA1 Tunable DFB Laser Array Integrated with Mach-Zehnder Modulators for 44.6Gbps 36 DQPSK Transmitter 1 of 5 10/22/2012 8:06 AM

3 TuA2 1550nm AlGaInAs/InP Widely Tunable BH Laser based on Arrayed DFB 38 TuA3 MEMS Tunable 1550-nm High Contrast Grating VCSEL 40 TuA4 Widely Tunable, Polarization Stable BCB MEMS VCSELs with SWG Integration 42 based on InP at 1.55 µm TuA5 High Power Single-Mode DFB Laser Diodes for 10xx nm Spectral Range 44 TuA6 High-Power and High-Efficiency 915 nm Broad-Area Laser Diodes with Window 46 Structure TuA7 Hollow Waveguide DBR Lasers with Novel 2D Optical Confinement Toward 48 Athermal and Narrow Linewidth Operations TuB TuB1 High Speed Lasers High-Speed Operation at 50 Gb/s and 60-km SMF Transmission with 1.3-µm 50 InGaAlAs-based DML TuB2 High Reliability 1.3-µm Buried Heterostructure AlGaInAs-MQW DFB Laser 52 Operated at 28-Gbit/s Direct Modulation TuB3 4-Wavelength 25.8-Gbps Directly Modulated Laser Array of 1.3-µm AlGaInAs 54 Distributed-Reflector Lasers TuB4 Extremely Compact Transmitter Optical Sub-assembly for Next-generation 10-km GbE Transceivers TuB5 40-Gb/s/ch Operation of 1.3-µm Four-Wavelength Lens-Integrated Surface- 58 Emitting DFB Laser Array TuB6 1.3-µm-Range InGaAs Metamorphic Laser for Low Power Consumption Operation 60 TuC TuC1 Quantum Dots and Novel Materials 700nm InP Quantum Dot Lasers with Strained Confinement Layers 62 TuC2 Room Temperature, Continuous Wave Lasing in Microcylinder and Microring 64 Quantum Dot Laser Diodes TuC3 Carrier Temperature and Threshold Current Density of Quantum Dot Lasers 66 TuC4 110 C Operation of Monolithic Quantum Dot Passively Mode-Locked Lasers 68 TuC5 Dual-Wavelength InP/AlGaInP Quantum Dot Laser 70 TuC6 Simultaneous Green and Red Lasing in a Single CdSSe Heterostructure Nanosheet 72 TuC7 Pure-Green High-Power CW Operation of BeZnCdSe Quantum-Well Laser Diodes 74 TuP TuP1 Poster Session 830nm Graded Index Double Barrier Separate Confinement Heterostructure Laser 76 Diodes with Small Vertical Divergence and Temperature Insensitive Characteristics TuP2 Two-Dimensional Antiguided Vertical Cavity Surface Emitting Laser Arrays with 78 Reflecting Boundary TuP4 The Effect of P-Doping in InP/AlGaInP Quantum Dot Lasers 80 TuP5 The Dependence of the Characteristic Temperature of Highly Stacked InAs 82 Quantum Dot Laser Diodes Fabricated Using a Strain-Compensation Technique on Stacking Layer Number 2 of 5 10/22/2012 8:06 AM

4 TuP6 Quantum Cascade Laser Emitting at 10.3 Micron for Detection of Ammonia 84 TuP7 1.3 µm QD Surface Emitting Laser Using Polymer Optical Circuit 86 TuP8 Nonlinear Transmission of Ultra-Short Pulses in an Oscillating InA/InP Quantum 88 TuP9 Dot Laser Elliptical Injection of a 1550nm-VCSEL: Theory and Experiment 90 TuP10 Achieving Temperature-Insensitive Wavelength in InP Quantum Dot Lasers 92 TuP11 Evaluating InAs QD Lasers for Space Borne Applications 94 TuP12 High Threshold Modal Gain Based on Highly Stacked InGaAs Quantum Dot Laser 96 TuP13 Diode Multi-Spectral Investigation of Bulk and Facet Failures in High-Power Single 98 TuP14 Emitters at 980 nm Characterization of Recombination Processes in Quantum Dot Lasers Using 100 TuP15 Small Signal Modulation Integrable Single Mode Lasers Based on Slots 102 TuP16 III-V/Si Distributed Feedback Laser with Sidewall Modulated Grating 104 TuP17 Modulation Bandwidth of GaInAsP/InP Lateral-Current-Injection Membrane Laser 106 TuP18 Evidence of Gain Modulation in km-long Lasers 108 TuP19 Coupled Semiconductor Ring Lasers 110 TuP20 Bistability and Switching with Very High Contrast Ratio in an Optically-Injected 112 TuP nm-QDash Fabry-Perot Laser Effect of Applied Bias Voltage on the Static and Dynamic Characteristics of 114 TuP22 Self-Pulsating Multi-Section InGaN-based Laser Diode Catastrophic Optical Bulk Damage (COBD) A New Degradation Mode in High 116 TuP23 Power InGaAs-AlGaAs Strained QW Lasers Size Dependence of Quantum-Dot Metal-Cavity Surface-Emitting Microlaser 118 TuP24 Hybrid Quantum Well/Quantum Dot Active Element for Broad Spectral 120 TuP25 Bandwidth Emitters and Amplifiers Gain Characterization of Electrically-Pumped VECSELs 122 TuP26 Compact Bragg Reflector Waveguide Modulator Based on VCSEL Structure with 124 TuP27 Low Driving Voltage below 0.5 V Detailed Stability Map and Bi-Stability Investigation for Injection-Locked 126 TuP28 Fabri-Perot Semiconductor Lasers Quantum Dot Microlasers with External Feedback A Chaotic System Close to 128 TuP29 the Quantum Limit Carrier Leakage in Interband Cascade Lasers 130 TuP30 Individual Optimization of InAlGaAsP-InP Sections for 1.55-µm Passively 133 TuP31 Mode-Locked Lasers Semiconductor Optical Amplifiers Operated as Modulators with High Extinction 135 TuP32 High-Frequency Microwave Signal Generation Using Multi-Transverse Mode VCSELs Subject to Dual-Beam Optical Injection of 5 10/22/2012 8:06 AM

5 TuP33 High-Power Optically Pumped Femtosecond VECSELs 139 Wednesday, October 10, 2012 WA Polariton and Plasmon Lasers and Emitters WA1 Polariton Lasers 141 WA2 Polariton Lasing in a ZnO-based Microcavity up to 353K 143 WA3 Nanoscale Lasers - In Search of the Smallest Laser N/A WA4 Unambiguous Demonstration of Room Temperature CW Operation of a 145 Sub-wavelength Metallic Cavity Laser WA5 Enhancement of Photon Emission Rate in Antenna-Coupled nanoleds 147 WA6 Plasmon Nanolaser and Circuit 149 WB WB1 Vertical Cavity Surface Emitting Lasers High Speed VCSELs for Energy-Efficient Data Transmission 151 WB2 Pushing the Output Powers of Transversal Multimode VECSELs Beyond the W Barrier WB3 Phase Tuning in Coherently Coupled VCSEL Array 155 WB4 25 Gb/s Operation of Oxide-Confined 850-nm VCSELs with Ultralow 56 fj 157 Dissipated Power per Bit WB5 Electro-Thermal Single-Mode Tuning in Field-Induced Charge-Separation Lasers 159 WB6 High-Speed Temperature-Stable 980-nm VCSELs 161 WC WC1 Photonic Crystal Lasers Electrically Driven Photonic Crystal Nanocavity Laser 163 WC2 Photonic Crystal Nanoslot Nanolaser for Ultra-High Sensitivity and Selectivity 165 Protein Sensing WC3 Photonic Crystal Surface Emitting Lasers Based on Epitaxial Regrowth 167 WC4 Ultra-low Threshold Current CW Operation of Photonic CrystalNanocavity Laser 169 with InAlAs Sacrificial Layer WC5 Mode Localization in Defect-free GaN-based Bottom-up Photonic Quasicrystal 171 Lasers WC6 Narrow Spectral Linewidth Surface Grating DBR Diode Lasers 173 Wednesday, October 10, 2012 PD PD1 PD2 PD3 Post Deadline >200 nm Gain-Bandwidth Hybrid Silicon Laser Array using Quantum Well Intermixing Energy-Efficient 1.3 um Short-Cavity VCSELs for 30 Gb/s Error-Free Optical Links Digital Modulation at 20 GBit/s of an InAs/InGaAlAs/InP Quantum Dot Laser Operating in the Telecom Wavelength Range 4 of 5 10/22/2012 8:06 AM

6 PD4 Fast Polarization Modulation in Vertical Cavity Lasers with Electrical RF Injection 5 of 5 10/22/2012 8:06 AM