Laboratory Exercise 2. DC characteristics of Bipolar Junction Transistors (BJT)
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1 DPARTMNT OF SMIONDTOR AND OPTOLTRONI DVIS Laboratory xercise D caracteristics of ipolar Junction Transistors (JT) Te aim of te exercise Te main aim of tis laboratory exercise is to understand principles of operation of ipolar Junction Transistors (JT) Te measurements of static and small sinal parameters will be conducted ackrounds Pysical structure of te JT JT is a semiconductor device avin a tree-layer structure wit tree external electrodes, te emitter (), te base (), and te collector () As sown in Fi, te structure may be a p-n-p or n-p-n type Despite of te transistor type te emitter layer as always more acceptor or donor impurities added tan te base or te collector layer Tis asymmetry results from different roles te emitter and te collector layers play in te JT In normal operation of te JT (as an amplifier), te base-emitter junction is forward biased and te base-collector junction is reverse biased Transistor amplification is controlled by canin te current flow trou te base-emitter junction N P P N N P (a) (b) Fi Te n-p-n JT (a) and te p-n-p JT (b) alon wit teir symbols Tere are tree operatin confiurations of te JT Tese are te common-emitter (O) confiuration, te common-base confiuration (O), and te common-collector (O) confiuration Tese confiurations are sown in Fi (a) (b) (c) Fi Te n-p-n transistor operatin confiurations: (a) common-emitter, (b) common-base, (c) common-collector D caracteristics Four types of caracteristics can be defined for eac of te transistor operatin confiurations Tese caracteristics define relationsips amon D currents and D voltaes at te transistor input and output: input caracteristics IN (I IN ) for OT const forward current ain caracteristics I OT (l IN ) for OT const reverse voltae ain caracteristics IN ( OT ) for l IN const output caracteristics I OT ( OT ) for l IN const D HARATRISTIS OF JT
2 DPARTMNT OF SMIONDTOR AND OPTOLTRONI DVIS Typical JT caracteristics for te common-emitter confiuration are illustrated in Fi 3 Fi3 JT common-emitter confiuration caracteristics: (a) input caracteristic, (b) forward current ain caracteristic, (c) reverse voltae ain caracteristic, (d) output caracteristic In practice te most important transistor caracteristic is te output caracteristic wic is used to determine to te transistor operatin reions wit respect to te define operatin point (see Fi 4) Tese reions are as follows: cut-off reion - te reion lyin below te I 0 curve; in tis reion, bot transistor junctions are reverse biased, saturation reion - wic corresponds to te i slope framents of te transistor output caracteristics; in tis reion bot transistor junctions are forward biased, active reion - lyin between te saturation and te cut-off reions correspondin to te flat framents of te output caracteristics; in tis reion te base-emitter junction is forward biased and te base-collector junction is reversed biased, safe operatin reion/area (SOA) - tis is te frament of te above reions bounded by te maximum collector current, te maximum collector-emitter voltae and te power dissipation curve (yperbola) D HARATRISTIS OF JT
3 DPARTMNT OF SMIONDTOR AND OPTOLTRONI DVIS Fi4 Transistor output caracteristics wit different operatin reions Small sinal parameters JT ybrid model If te transistor input sinal is a low frequency small amplitude sinal te JT can be modelled as a linear two-port device quations describin suc a device can be written in te form: u i i i were subscripts and denote earlier used subscripts "in" and "out" respectively Parameters of te above equations are real numbers and represent slope anles of te tanents to te relevant transistor caracteristics for te iven operatin point Te parameters can be computed in te followin way: + + u u const corresponds to te slope of te input caracteristic, I const corresponds to te slope of te reverse voltae ain caracteristic, const corresponds to te slope of te forward current ain caracteristic, I const corresponds to te slope of te output caracteristic In enineerin practice te -parameters are calculated not from te differential expressions but are approximated by relevant difference expressions On te basis of te ybrid parameters an equivalent transistor circuit can be constructed and te transistor small-sinal model can be created Te JT equivalent circuit is sown in Fi 5 It allows to interpret eac of te model parameters in a pysical manner: - input impedance if te output is sort-circuited, - reverse voltae ain if te input is open-circuited, - sort-circuit forward current ain, - output impedance if te input is open-circuited Fi 5 quivalent circuit for te transistor correspondin to te ybrid model D HARATRISTIS OF JT 3
4 DPARTMNT OF SMIONDTOR AND OPTOLTRONI DVIS Switcin ac junction as two capacities: j (te junction capacitance) and d (te diffusive capacitance) Fi 6 sows te equivalent circuit of JT for te dynamic states Fi 6 Te equivalent circuit for dynamic states Te transistors are applied in switcin circuits as te controlled keys Suc a basic key is introduced in Fi 7 In tis circuit, te cane of base current causes movement of te operatin point alon te load line plotted on te output caracteristics (see Fi7) In point P, te transistor is in te cut-off reion and bot its junctions are reversely biased etween point P and P, te transistor is in active reion and base-emitter junction is at forward bias and base-collector junction is at reverse bias In point P, te transistor is in saturation reion and bot its junctions are forward biased Fi 7 asic key circuit and te output caracteristics wit te load line Te transistor switcin depends on transistor parameters and te circuit in wic te transistor is bein switced Te canes of voltaes and currents durin JT switcin are presented in Fi 8 Te switcin on starts wen te voltae canes its value from R to F it consists of two staes Te time wen te junction capacity - reloads is called delay time" t d Tis time covers also te time tat is necessary for te injected trou te emitter junction carriers to pass te base reion and enter te collector junction In tis moment te rise time" beins t r Switcin on is completed wen te voltae reaces te constant value Te switcin on time: t ON t d +t r Te switcin off starts wen te voltae canes its value from F to - R It consists of two staes Durin te first stae tat lasts for t s - "store time", bot diffusion capacitances are discared Te second stae lasts for t f "fall time" and is required for base-collector junction capacitance to be reloaded Ten, tis junction can take all te voltae Te switcin off time: t OFF t s +t f D HARATRISTIS OF JT 4
5 DPARTMNT OF SMIONDTOR AND OPTOLTRONI DVIS Fi 8 Switcin canes of voltaes and currents Te scope of te exercise Te exercise covers measurements of te small-power n-p-n type transistor - 07 Take te static caracteristics of JT operatin in common-emitter confiuration Perform te small sinal parameter measurements of JT operatin in common-emitter confiuration xamine te pulse response of JT xercise Measurements of transistor D caracteristics For te analysed transistor, measure four caracteristics wit te aid of measurement circuit sown in Fi 9, eac for listed values of te respective parameters Output I f( ) for I 0, 0, 30, 40, 50 and 60 µa, Input I f( ) for and 0 V, Forward current ain I f(i ) for and 0 V, Reverse voltae ain f( ) for l 0 and 60 µa, Fi9 Sceme of measurement circuit for JT D caracteristics Small sinal parameters ybrid model Make te measurements of small-sinal caracteristics e (I ), e (I ) e (I ), e (I ) for JT in confiuration Te collector current sould vary in te rane 0-50mA for VTe circuit diarams are sown in Fi 0 a, b D HARATRISTIS OF JT 5
6 DPARTMNT OF SMIONDTOR AND OPTOLTRONI DVIS Fi 0a Te circuit diaram for e and e caracteristics Fi 0b Te circuit diaram for e and e caracteristics NOT: Te resistor Rp is used for measurement and evaluation of e parameter Te parameters sould be calculated wit te aid of followin formulas: e R e be ce be e R e Rp R p JT Switcin Find te pulse response of te JT valuate switcin on and off times wit respect to: resistance R for te settled amplitude of te enerator sinal and voltae ce ce resistance R for te settled amplitude of te enerator sinal and voltae capacitance for te settled resistance R, amplitude of te enerator sinal and voltae D HARATRISTIS OF JT 6
7 DPARTMNT OF SMIONDTOR AND OPTOLTRONI DVIS Fi4 Te circuit diaram for pulse response of JT Report Te report from te laboratory exercise sould contain: D aracteristics of te tested transistor (RMARKS: ater te caracteristic on one rap) Determine ybrid parameters for a cosen operatin point For te tested transistor, plot its caracteristics and ten plot strait lines correspondin to transistor ybrid parameters (calculated in te previous point), aracteristics of parameters versus collector current Switcin caracteristics of tested transistor (switcin times t d, t r, t s and t f sould be atered in te table) Remarks, observations and conclusions References [] ZLisik, Podstawy fizyki półprzewodników, PŁ, 994 (in polis) [] Jaranowski, Półprzewodnikowe układy impulsowe i cyfrowe, WNT 976 (in polis) [3] JJaczewski Podstawy elektroniki i eneroelektroniki, Warszawa 98 (in polis) [4] AŚwit, J Pułtorak, Przyrządy półprzewodnikowe WNT, Warszawa 979 (in polis) D HARATRISTIS OF JT 7
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