EE 330 Lecture 16. Comparison of MOS Processes Bipolar Process
|
|
- Osborne Patrick
- 5 years ago
- Views:
Transcription
1 330 Lecture 16 omparison of MOS Processes ipolar Process
2 Review from last lecture P-Select Mask p-diffusion p-diffusion A-A Section Note the gate is self aligned!! - Section
3 Review from last lecture n-select Mask n-diffusion A-A Section n-diffusion - Section
4 Review from last lecture Metal Mask A-A Section - Section
5 How does the inverter delay compare between a 0.5u process and a 0.13u process? V DD V IN V OUT V IN V OUT V SS
6
7
8
9
10 How does the inverter delay compare between a 0.5u process and a 0.13u process? Assume n-channel and p-channel devices are minimum sized V IN V OUT n t HL =R pd R L pd noxw n VDD VTN t LH =R pd L R pu L Lp W V V p OX p DD TP W L W L L OX n n p p 0.5u 0.13u L Rpd Rpu THL TLH Rpu for the p-ch 0.13 is in question
11 asic Devices and Device Models Resistor Diode apacitor MOSFT JT
12 ipolar Junction Transistors Operation Modeling
13 arriers in Doped Semiconductors n-type p-type
14 arriers in Doped Semiconductors V I urrent carriers are dominantly electrons Small number of holes are short-term carriers V I urrent carriers are dominantly holes Small number of electrons are short-term carriers
15 arriers in Doped Semiconductors Majority arriers Minority arriers n-type electrons holes p-type holes electrons
16 arriers in MOS Transistors onsider n-channel MOSFT Saturation Region hannel Triode Region
17 arriers in MOS Transistors onsider n-channel MOSFT Saturation Region Triode Region arriers in electrically induced n-channel are electrons
18 arriers in MOS Transistors onsider p-channel MOSFT Saturation Region hannel Triode Region
19 arriers in MOS Transistors onsider p-channel MOSFT Saturation Region Triode Region arriers in electrically induced p-channel are holes
20 arriers in MOS Transistors arriers in channel of MOS transistors are Majority carriers
21 ipolar Transistors npn stack pnp stack ipolar Devices Show asic Symmetry lectrical Properties not Symmetric Designation of and critical npn transistor pnp transistor With proper doping and device sizing these form ipolar Transistors
22 ipolar Transistors npn transistor pnp transistor n-channel MOSFT p-channel MOSFT In contrast to a MOSFT which has 4 terminals, a JT only has 3 terminals
23 ipolar Operation onsider npn transistor Forward Active Operation npn stack Under forward bias current flow into base and out of emitter urrent flow is governed by the diode equation arriers in emitter are electrons (majority carriers) When electrons pass into the base they become minority carriers Quickly recombine with holes to create holes base region Dominant current flow in base is holes (majority carriers)
24 ipolar Operation onsider npn transistor Forward Active Operation npn stack Under forward bias and reverse bias current flows into base region arriers in emitter are electrons (majority carriers) When electrons pass into the base they become minority carriers When minority carriers are present in the base they can be attracted to collector
25 ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 If no force on electron is applied by collector, electron will contribute to base current
26 ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 If no force on electron is applied by collector, electron will contribute to base current lectron will recombine with a hole so dominant current flow in base will be by majority carriers
27 ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 F2 When minority carriers are present in the base they can be attracted to collector with reverse-bias of junction and can move across junction
28 ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 F2 When minority carriers are present in the base they can be attracted to collector with reverse-bias of junction and can move across junction Will contribute to collector current flow as majority carriers
29 ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 So, what will happen? F2
30 Size and thickness of base region and relative doping levels will play key role in percent of minority carriers injected into base contributing to collector current ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 So, what will happen? F2 Some will recombine with holes and contribute to base current and some will be attracted across junction and contribute to collector
31 ipolar Operation onsider npn transistor Forward Active operation npn stack Under forward bias and reverse bias current flows into base region arriers in emitter are electrons (majority carriers) When electrons pass into the base they become minority carriers When minority carriers are present in the base they can be attracted to collector Minority carriers either recombine with holes and contribute to base current or are attracted into collector region and contribute to collector current
32 ipolar Operation onsider npn transistor - Forward Active Operation npn stack Under forward bias and reverse bias current flows into base region fficiency at which minority carriers injected into base region and contribute to collector current is termed α α is always less than 1 but for a good transistor, it is very close to 1 For good transistors.99 < α <.999 Making the base region very thin makes α large
33 ipolar Transistors npn stack pnp stack principle of operation of pnp and npn transistors are the same minority carriers in base of pnp are holes npn usually have modestly superior properties because mobility of electrons Is larger than mobility of holes
34 ipolar Operation onsider npn transistor Forward Active Operation npn stack In contrast to MOS devices where current flow in channel is by majority carriers, current flow in the critical base region of bipolar transistors is by minority carriers
35 ipolar Operation onsider npn transistor Forward Active Operation I I I I β is typically very large I α I I I I I 1 defn 1 I I often 50<β<999
36 ipolar Operation onsider npn transistor Forward Active Operation I I I I β is typically very large I ipolar transistor can be thought of a current amplifier with a large current gain In contrast, MOS transistor is inherently a tramsconductance amplifier urrent flow in base is governed by the diode equation ollector current thus varies exponentially with V I I I ~ S e I ~ S V V e t V V t
37 ipolar Operation onsider npn transistor Forward Active Operation I I I I I β is typically very large ollector current thus varies exponentially with V I I ~ S e V V t This exponential relationship (in contrast to the square-law relationship for the MOSFT) provides a very large gain for the JT and this property is very useful for many applications!!
38 ipolar Models Simple dc Model I I V V following convention, pick I and I as dependent variables and V and V as independent variables
39 Simple dc model onsider npn transistor Forward Active Operation Summary: I I V t I ~ S e I ~ S kt q V V e t V V t I V I V This has the properties we are looking for but the variables we used in introducing these relationships are not standard It can be shown that I ~ S is proportional to the emitter area A Define I ~ 1 S and substitute this into the above equations J S A
40 Simple dc model npn transistor Forward Active Operation I I V t I ~ S e I ~ S kt q V V e t V V t I J I J V t kt q S S A β A e e V V V t V t J S is termed the saturation current density Process Parameters : J S,β Design Parameters: A nvironmental parameters and physical constants: k,t,q At room temperature, V t is around 26mV J S very small around.25fa/u 2
41 nd of Lecture 16
EE 330 Lecture 18. Characteristics of Finer Feature Size Processes. Bipolar Process
330 Lecture 18 haracteristics of Finer Feature Size Processes ipolar Process How does the inverter delay compare between a 0.5u process and a 0.13u process? DD IN OUT IN OUT SS How does the inverter
More informationEE 330 Lecture 19. Bipolar Devices
330 Lecture 19 ipolar Devices Review from last lecture n-well n-well n- p- Review from last lecture Metal Mask A-A Section - Section Review from last lecture D A A D Review from last lecture Should now
More informationEE 434 Lecture 21. MOS Amplifiers Bipolar Devices
434 ecture MOS Amplifiers ipolar Devices Quiz 3 The quiescent voltage across the 5K resistor in the circuit shown was measured to be 3. ) Determine the quiescent output voltage ) Determine the small signal
More informationLecture (06) Bipolar Junction Transistor
Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢ BJT structure The BJT is constructed with three doped semiconductor regions One
More informationChapter 4 Physics of Bipolar Transistors. EE105 - Spring 2007 Microelectronic Devices and Circuits. Structure and Symbol of Bipolar Transistor
EE105 - Spring 2007 Microelectronic Devices and ircuits Lecture 10 Bipolar ransistors hapter 4 Physics of Bipolar ransistors 4.1 General onsiderations 4.2 Structure of Bipolar ransistor 4.3 Operation of
More informationECE 440 Lecture 29 : Introduction to the BJT-I Class Outline:
ECE 440 Lecture 29 : Introduction to the BJT-I Class Outline: Narrow-Base Diode BJT Fundamentals BJT Amplification Things you should know when you leave Key Questions How does the narrow-base diode multiply
More informationAnalog & Digital Electronics Course No: PH-218
Analog & Digital Electronics Course No: PH-218 Lec-5: Bipolar Junction Transistor (BJT) Course nstructors: Dr. A. P. VAJPEY Department of Physics, ndian nstitute of Technology Guwahati, ndia 1 Bipolar
More informationElectronics Fundamentals BIPOLAR TRANSISTORS. Construction, circuit symbols and biasing examples for NPN and PNP junction transistors.
IPOLA TANSISTOS onstruction, circuit symbols and biasing examples for NPN and PNP junction transistors Slide 1 xternal bias voltages create an electric field, which pulls electrons (emitted into the base
More informationCOE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline
COE/EE152: Basic Electronics Lecture 5 Andrew Selasi Agbemenu 1 Outline Physical Structure of BJT Two Diode Analogy Modes of Operation Forward Active Mode of BJTs BJT Configurations Early Effect Large
More informationLecture 4. Reading: Chapter EE105 Fall 2007 Lecture 4, Slide 1 Prof. Liu, UC Berkeley
Lecture 4 OUTLNE Bipolar Junction Transistor (BJT) General considerations Structure Operation in active mode Large-signal model and - characteristics Reading: Chapter 4.1-4.4.2 EE105 Fall 2007 Lecture
More informationBipolar Junction Transistors (BJTs) Overview
1 Bipolar Junction Transistors (BJTs) Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s Institute of Technology
More informationPhysics of Bipolar Transistor
Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power
More informationUNIT-III Bipolar Junction Transistor
DC UNT-3.xplain the construction and working of JT. UNT- ipolar Junction Transistor A bipolar (junction) transistor (JT) is a three-terminal electronic device constructed of doped semiconductor material
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NPN Bipolar Junction Transistor (BJT)
EE105 Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 utardja Dai Hall (DH) 1 NPN Bipolar Junction Transistor (BJT) Forward Bias Reverse Bias Hole Flow Electron
More informationChapter 3 Bipolar Junction Transistors (BJT)
Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,
More informationLecture 16. The Bipolar Junction Transistor (I) Forward Active Regime. Outline. The Bipolar Junction Transistor (BJT): structure and basic operation
Lecture 16 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I-V characteristics in forward active regime Reading Assignment:
More informationAn Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005
An Introduction to Bipolar Junction Transistors Transistors Transistors are three port devices used in most integrated circuits such as amplifiers. Non amplifying components we have seen so far, such as
More informationPHYS225 Lecture 6. Electronic Circuits
PHYS225 Lecture 6 Electronic Circuits Transistors History Basic physics of operation Ebers-Moll model Small signal equivalent Last lecture Introduction to Transistors A transistor is a device with three
More informationElectronic Circuits - Tutorial 07 BJT transistor 1
Electronic Circuits - Tutorial 07 BJT transistor 1-1 / 20 - T & F # Question 1 A bipolar junction transistor has three terminals. T 2 For operation in the linear or active region, the base-emitter junction
More informationTransistor electronic technologies
Transistor electronic technologies Bipolar Junction Transistor discrete or integrated circuit discrete = individual component MOS (Metal-Oxide-Silicon) Field Effect Transistor mainly used in integrated
More informationBipolar Junction Transistors
ipolar Junction Transistor (JT ipolar Junction Transistors JT is a three-terminal device: emitter (, collector ( and base (. There are two types: pnp-type and npn-type. npn transistor: emitter & collector
More informationLecture 3: Transistors
Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,
More informationProf. Paolo Colantonio a.a
Prof. Paolo olantonio a.a. 2011 12 ipolar transistors are one of the main building blocks in electronic systems They are used in both analogue and digital circuits They incorporate two pn junctions and
More informationCHAPTER 3 THE BIPOLAR JUNCTION TRANSISTOR (BJT)
HAPT 3 TH IPOLA JUNTION TANSISTO (JT) 1 In this chapter, we will: JT Discuss the physical structure and operation of the bipolar junction transistor. Understand the dc analysis of bipolar transistor circuits.
More informationLecture 12. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 12 Bipolar Junction Transistor (BJT) BJT 1-1 Course Info Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays) Location: K2 Time: 1:40 pm Tutorial hours: 2 One tutorial class every week
More informationEIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices
EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
More informationFigure1: Basic BJT construction.
Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).
More informationPower Bipolar Junction Transistors (BJTs)
ECE442 Power Semiconductor Devices and Integrated Circuits Power Bipolar Junction Transistors (BJTs) Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Power Bipolar Junction Transistor (BJT) Background The
More informationBIPOLAR JUNCTION TRANSISTORS (BJTs) Dr Derek Molloy, DCU
IPOLAR JUNCTION TRANSISTORS (JTs) Dr Derek Molloy, DCU What are JTs? Two PN junctions joined together is a JT Simply known as a transistor! ipolar? Current carried by electrons and holes Will see FETs
More informationGeorgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam
Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number
More informationECE 310 Microelectronics Circuits
ECE 310 Microelectronics Circuits Bipolar Transistors Dr. Vishal Saxena (vishalsaxena@boisetstate.edu) Jan 20, 2014 Vishal Saxena 1 Bipolar Transistor n the chapter, we will study the physics of bipolar
More informationMicroelectronic Circuits, Kyung Hee Univ. Spring, Bipolar Junction Transistors
Bipolar Junction Transistors 1 Introduction physical structure of the bipolar transistor and how it works How the voltage between two terminals of the transistor controls the current that flows through
More informationEE301 Electronics I , Fall
EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials
More informationLecture 4. Accurate Bipolar Representation. Forward Active Region. Structure and Symbol of Bipolar Transistor
Lecture 4 Structure and Symbol of ipolar ransistor OULNE ipolar Junction ransistor (J) General considerations Structure Operation in active mode Large signal model and characteristics ransconductance Small
More informationChapter 3. Bipolar Junction Transistors
Chapter 3. Bipolar Junction Transistors Outline: Fundamental of Transistor Common-Base Configuration Common-Emitter Configuration Common-Collector Configuration Introduction The transistor is a three-layer
More informationLecture 9. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 9 ipolar Junction Transistor (JT) JT 1-1 Outline ontinue JT JT iasing D analysis Fixed-bias circuit mitter-stabilized bias circuit oltage divider bias circuit D bias with voltage feedback circuit
More informationMOS Field-Effect Transistors (MOSFETs)
6 MOS Field-Effect Transistors (MOSFETs) A three-terminal device that uses the voltages of the two terminals to control the current flowing in the third terminal. The basis for amplifier design. The basis
More informationET215 Devices I Unit 4A
ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic
More informationPhysics 160 Lecture 5. R. Johnson April 13, 2015
Physics 160 Lecture 5 R. Johnson April 13, 2015 Half Wave Diode Rectifiers Full Wave April 13, 2015 Physics 160 2 Note that there is no ground connection on this side of the rectifier! Output Smoothing
More informationAlexandria University Faculty of Engineering Electrical Engineering Department
Chapter 10: Alexandria University Faculty of Engineering Electrical Engineering Department ECE 336: Semiconductor Devices Sheet 6 1. A Si pnp BJT with N AE = 5x10 17 / cm 3, N DB = 10 15 /cm 3 and N AC
More informationELEC 3908, Physical Electronics, Lecture 16. Bipolar Transistor Operation
ELEC 3908, Physical Electronics, Lecture 16 Bipolar Transistor Operation Lecture Outline Last lecture discussed the structure and fabrication of a double diffused bipolar transistor Now examine current
More informationLecture 14. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 14 ipolar Junction Transistor (JT) JT 1-1 Outline ontinue JT iasing D analysis Fixed-bias circuit (revision) mitter-stabilized bias circuit oltage divider bias circuit D bias with voltage feedback
More informationThe shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect
Diode as Clamper A clamping circuit is used to place either the positive or negative peak of a signal at a desired level. The dc component is simply added or subtracted to/from the input signal. The clamper
More informationECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor
More informationTransistor Characteristics
Transistor Characteristics Topics covered in this presentation: Transistor Construction Transistor Operation Transistor Characteristics 1 of 15 The Transistor The transistor is a semiconductor device that
More informationTransistors. Bipolar Junction transistors Principle of operation Characteristics. Field effect transistors Principle of operation Characteristics
Transistors ipolar Junction transistors Principle of operation haracteristics Field effect transistors Principle of operation haracteristics ntroduction Radio based on vacuum tubes Fundamental building
More informationBipolar Junction Transistors (BJTs)
C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode Cutoff Active Saturation EBJ Reverse
More informationFYSE400 ANALOG ELECTRONICS
7.9.016 YS400 ANALOG LTONS LTU 1 ntroduction to ipolar Junction Transistor ircuits 1 NTODUTON The deal urrent-controlled urrent Source efore the detailed analyzation of transistor operation, we should
More informationUNIT 3 Transistors JFET
UNIT 3 Transistors JFET Mosfet Definition of BJT A bipolar junction transistor is a three terminal semiconductor device consisting of two p-n junctions which is able to amplify or magnify a signal. It
More informationChapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering
MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Bipolar Transistor Construction npn BJT Transistor Structure npn BJT I = I + E C I B V V BE CE = V = V B C V V E E Base-to-emitter
More informationIntroduction to semiconductor technology
Introduction to semiconductor technology Outline 7 Field effect transistors MOS transistor current equation" MOS transistor channel mobility Substrate bias effect 7 Bipolar transistors Introduction Minority
More informationExercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)
Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Recapitulation and Equivalent Circuit Models Previous slides present first order BJT model. Assumes npn transistor in active mode. Basic relationship
More informationLecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)
More informationBipolar Junction Transistor (BJT) Basics- GATE Problems
Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =
More informationCHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN
CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN Hanoi, 9/24/2012 Contents 2 Structure and operation of BJT Different configurations of BJT Characteristic curves DC biasing method and analysis
More informationLecture 4. Reading: Chapter EE105 Spring 2008 Lecture 4, Slide 2 Prof. Wu, UC Berkeley. Structure and Symbol of Bipolar Transistor
Lecture 4 OULNE Bipolar Junction ransistor (BJ) General considerations Structure Operation in active mode Large signal model and characteristics ransconductance Small signal model he Early effect Reading:
More informationUNIT 3: FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are
More informationLecture (08) Bipolar Junction Transistor (2)
Lecture (08) ipolar Junction Transistor (2) y: Dr. Ahmed lshafee 1 JT haracteristic ollector haracteristic urves 2 Applying fixed V, increasing V Saturation Assume that V is set to produce a certain value
More informationCHAPTER 8 The PN Junction Diode
CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction
More informationDepartment of Electrical Engineering IIT Madras
Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or
More informationSEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET
SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change
More informationECE 442 Solid State Devices & Circuits. 6. Bipolar Transistors
ECE 442 Solid State Devices & Circuits 6. Bipolar Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 342 Jose Schutt Aine 1 Bipolar Junction
More informationLaboratory #5 BJT Basics and MOSFET Basics
Laboratory #5 BJT Basics and MOSFET Basics I. Objectives 1. Understand the physical structure of BJTs and MOSFETs. 2. Learn to measure I-V characteristics of BJTs and MOSFETs. II. Components and Instruments
More informationBJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1
BJT Bipolar Junction Transistor Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com The Bipolar Junction Transistor is a semiconductor device which
More informationMTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap
MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor transistors for logic and memory Reading: Kasap 6.6-6.8 Vacuum tube diodes 2 Thermionic emission from cathode Electrons collected
More informationSolid State Devices- Part- II. Module- IV
Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the
More informationDigital Integrated Circuits A Design Perspective. The Devices. Digital Integrated Circuits 2nd Devices
Digital Integrated Circuits A Design Perspective The Devices The Diode The diodes are rarely explicitly used in modern integrated circuits However, a MOS transistor contains at least two reverse biased
More informationBipolar Junction Transistors
Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal
More informationBipolar Junction Transistor
ESE 211 / Spring 2011 / Lecture 10 Bipolar Junction Transistor Let us first consider general transconductance amplifier loaded with short circuit Transconductance Obviously, power supplies are needed for
More informationBipolar Junction Transistor (BJT)
Bipolar Junction Transistor (BJT) - three terminal device - output port controlled by current flow into input port Structure - three layer sandwich of n-type and p-type material - npn and pnp transistors
More informationC H A P T E R 6 Bipolar Junction Transistors (BJTs)
C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode EBJ CBJ Cutoff Reverse Reverse Active
More informationEBERS Moll Model. Presented by K.Pandiaraj Assistant Professor ECE Department Kalasalingam University
EBERS Moll Model Presented by K.Pandiaraj Assistant Professor ECE Department Kalasalingam University BJT Device Models The primary function of a model is to predict the behaviour of a device in particular
More informationElectronic Circuits Laboratory EE462G Lab #8. BJT Common Emitter Amplifier
lectronic ircuits Laboratory 46G Lab #8 JT ommon mitter Amplifier npn ipolar Junction Transistor JT in a common-emitter configuration ase ollector V _ n p n V _ mitter For most applications the JT is operated
More informationElectrostatic Discharge and Latch-Up
Connexions module: m1031 1 Electrostatic Discharge and Latch-Up Version 2.10: Jul 3, 2003 12:00 am GMT-5 Bill Wilson This work is produced by The Connexions Project and licensed under the Creative Commons
More informationESE319 Introduction to Microelectronics BJT Intro and Large Signal Model
BJT Intro and Large Signal Model 1 VLSI Chip Manufacturing Process 2 0.35 mm SiGe BiCMOS Layout for RF (3.5 GHz) Two-Stage Power Amplifier Each transistor above is realized as net of four heterojunction
More informationCO2005: Electronics I. Transistor (BJT) Electronics I, Neamen 3th Ed. 1
O2005: Electronics The Bipolar Junction Transistor (BJT) Electronics, Neamen 3th Ed. 1 Bipolar Transistor Structures N P 17 10 N D 19 10 N D 15 10 Electronics, Neamen 3th Ed. 2 Forward-Active Mode in the
More informationTHE METAL-SEMICONDUCTOR CONTACT
THE METAL-SEMICONDUCTOR CONTACT PROBLEM 1 To calculate the theoretical barrier height, built-in potential barrier, and maximum electric field in a metal-semiconductor diode for zero applied bias. Consider
More informationClass XII - Physics Semiconductor Electronics. Chapter-wise Problems
lass X - Physics Semiconductor Electronics Materials, Device and Simple ircuit hapter-wise Problems Multiple hoice Question :- 14.1 The conductivity of a semiconductor increases with increase in temperature
More informationUNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences.
UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences Discussion #9 EE 05 Spring 2008 Prof. u MOSFETs The standard MOSFET structure is shown
More informationBJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
More information6.012 Microelectronic Devices and Circuits
Page 1 of 13 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Microelectronic Devices and Circuits Final Eam Closed Book: Formula sheet provided;
More informationDigital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology
K. N. Toosi University of Technology Chapter 7. Field-Effect Transistors By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology http://wp.kntu.ac.ir/faradji/digitalelectronics.htm
More informationEE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02
EE 5611 Introduction to Microelectronic Technologies Fall 2014 Thursday, September 04, 2014 Lecture 02 1 Lecture Outline Review on semiconductor materials Review on microelectronic devices Example of microelectronic
More informationLecture 2 p-n junction Diode characteristics. By Asst. Prof Dr. Jassim K. Hmood
Electronic I Lecture 2 p-n junction Diode characteristics By Asst. Prof Dr. Jassim K. Hmood THE p-n JUNCTION DIODE The pn junction diode is formed by fabrication of a p-type semiconductor region in intimate
More informationLecture - 18 Transistors
Electronic Materials, Devices and Fabrication Dr. S. Prarasuraman Department of Metallurgical and Materials Engineering Indian Institute of Technology, Madras Lecture - 18 Transistors Last couple of classes
More informationPreliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B
Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B Problem 1. Consider the following circuit, where a saw-tooth voltage is applied
More informationCHAPTER 8 The PN Junction Diode
CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction
More informationBipolar Transistors. Ideal Transistor. Reading: (4-5 th edition) 8-16, Bipolar Transistor - Terminals. NPN Bipolar Transistor Physics
Bipolar Transistors deal Transistor Bipolar Transistor Terminals Reading: (45 th edition) 816, 2633 P Bipolar Transistor Physics Large Signal Model Early Effect Small Signal Model Modern Electronics: F3
More informationI E I C since I B is very small
Figure 2: Symbols and nomenclature of a (a) npn and (b) pnp transistor. The BJT consists of three regions, emitter, base, and collector. The emitter and collector are usually of one type of doping, while
More informationAnalog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.
Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the
More informationAnalog Electronics (Course Code: EE314) Lecture 5 7: Junction contd, BJT. Course Instructor: Shree Prakash Tiwari
ndian nstitute of echnology Jodhpur, Year 2017 Analog lectronics (ourse ode: 314) Lecture 5 7: Junction contd, J ourse nstructor: Shree Prakash iwari mail: sptiwari@iitj.ac.in Webpage: http://home.iitj.ac.in/~sptiwari/
More informationReg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester
WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES
More informationField-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
More informationECE321 Electronics I Fall 2006
ECE321 Electronics I Fall 2006 Professor James E. Morris Lecture 11 31 st October, 2006 Bipolar Junction Transistors (BJTs) 5.1 Device Structure & Physics 5.2 I-V Characteristics Convert 5.1 information
More informationLinear Voltage Regulators Power supplies and chargers SMM Alavi, SBU, Fall2017
Linear Voltage Regulator LVRs can be classified based on the type of the transistor that is used as the pass element. The bipolar junction transistor (BJT), field effect transistor (FET), or metal oxide
More informationCapacitors, diodes, transistors
Capacitors, diodes, transistors capacitors charging and time response filters (impedance) semi-conductor diodes rectifiers transformers transistors CHM6158C - Lecture 3 1 Capacitors Symbol 2 Capacitors
More informationReview Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination
Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Current Transport: Diffusion, Thermionic Emission & Tunneling For Diffusion current, the depletion layer is
More informationPHYS 3050 Electronics I
PHYS 3050 Electronics I Chapter 4. Semiconductor Diodes and Transistors Earth, Moon, Mars, and Beyond Dr. Jinjun Shan, Associate Professor of Space Engineering Department of Earth and Space Science and
More informationBasic Fabrication Steps
Basic Fabrication Steps and Layout Somayyeh Koohi Department of Computer Engineering Adapted with modifications from lecture notes prepared by author Outline Fabrication steps Transistor structures Transistor
More informationCommunication Microelectronics (W17)
Communication Microelectronics (W17) Lecture 4: Bipolar Junction Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Bipolar Junction Transistor (BJT) Physical Structure and I-V
More information