EE 330 Lecture 16. Comparison of MOS Processes Bipolar Process

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1 330 Lecture 16 omparison of MOS Processes ipolar Process

2 Review from last lecture P-Select Mask p-diffusion p-diffusion A-A Section Note the gate is self aligned!! - Section

3 Review from last lecture n-select Mask n-diffusion A-A Section n-diffusion - Section

4 Review from last lecture Metal Mask A-A Section - Section

5 How does the inverter delay compare between a 0.5u process and a 0.13u process? V DD V IN V OUT V IN V OUT V SS

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10 How does the inverter delay compare between a 0.5u process and a 0.13u process? Assume n-channel and p-channel devices are minimum sized V IN V OUT n t HL =R pd R L pd noxw n VDD VTN t LH =R pd L R pu L Lp W V V p OX p DD TP W L W L L OX n n p p 0.5u 0.13u L Rpd Rpu THL TLH Rpu for the p-ch 0.13 is in question

11 asic Devices and Device Models Resistor Diode apacitor MOSFT JT

12 ipolar Junction Transistors Operation Modeling

13 arriers in Doped Semiconductors n-type p-type

14 arriers in Doped Semiconductors V I urrent carriers are dominantly electrons Small number of holes are short-term carriers V I urrent carriers are dominantly holes Small number of electrons are short-term carriers

15 arriers in Doped Semiconductors Majority arriers Minority arriers n-type electrons holes p-type holes electrons

16 arriers in MOS Transistors onsider n-channel MOSFT Saturation Region hannel Triode Region

17 arriers in MOS Transistors onsider n-channel MOSFT Saturation Region Triode Region arriers in electrically induced n-channel are electrons

18 arriers in MOS Transistors onsider p-channel MOSFT Saturation Region hannel Triode Region

19 arriers in MOS Transistors onsider p-channel MOSFT Saturation Region Triode Region arriers in electrically induced p-channel are holes

20 arriers in MOS Transistors arriers in channel of MOS transistors are Majority carriers

21 ipolar Transistors npn stack pnp stack ipolar Devices Show asic Symmetry lectrical Properties not Symmetric Designation of and critical npn transistor pnp transistor With proper doping and device sizing these form ipolar Transistors

22 ipolar Transistors npn transistor pnp transistor n-channel MOSFT p-channel MOSFT In contrast to a MOSFT which has 4 terminals, a JT only has 3 terminals

23 ipolar Operation onsider npn transistor Forward Active Operation npn stack Under forward bias current flow into base and out of emitter urrent flow is governed by the diode equation arriers in emitter are electrons (majority carriers) When electrons pass into the base they become minority carriers Quickly recombine with holes to create holes base region Dominant current flow in base is holes (majority carriers)

24 ipolar Operation onsider npn transistor Forward Active Operation npn stack Under forward bias and reverse bias current flows into base region arriers in emitter are electrons (majority carriers) When electrons pass into the base they become minority carriers When minority carriers are present in the base they can be attracted to collector

25 ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 If no force on electron is applied by collector, electron will contribute to base current

26 ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 If no force on electron is applied by collector, electron will contribute to base current lectron will recombine with a hole so dominant current flow in base will be by majority carriers

27 ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 F2 When minority carriers are present in the base they can be attracted to collector with reverse-bias of junction and can move across junction

28 ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 F2 When minority carriers are present in the base they can be attracted to collector with reverse-bias of junction and can move across junction Will contribute to collector current flow as majority carriers

29 ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 So, what will happen? F2

30 Size and thickness of base region and relative doping levels will play key role in percent of minority carriers injected into base contributing to collector current ipolar Operation onsider npn transistor Forward Active Operation npn stack F 1 So, what will happen? F2 Some will recombine with holes and contribute to base current and some will be attracted across junction and contribute to collector

31 ipolar Operation onsider npn transistor Forward Active operation npn stack Under forward bias and reverse bias current flows into base region arriers in emitter are electrons (majority carriers) When electrons pass into the base they become minority carriers When minority carriers are present in the base they can be attracted to collector Minority carriers either recombine with holes and contribute to base current or are attracted into collector region and contribute to collector current

32 ipolar Operation onsider npn transistor - Forward Active Operation npn stack Under forward bias and reverse bias current flows into base region fficiency at which minority carriers injected into base region and contribute to collector current is termed α α is always less than 1 but for a good transistor, it is very close to 1 For good transistors.99 < α <.999 Making the base region very thin makes α large

33 ipolar Transistors npn stack pnp stack principle of operation of pnp and npn transistors are the same minority carriers in base of pnp are holes npn usually have modestly superior properties because mobility of electrons Is larger than mobility of holes

34 ipolar Operation onsider npn transistor Forward Active Operation npn stack In contrast to MOS devices where current flow in channel is by majority carriers, current flow in the critical base region of bipolar transistors is by minority carriers

35 ipolar Operation onsider npn transistor Forward Active Operation I I I I β is typically very large I α I I I I I 1 defn 1 I I often 50<β<999

36 ipolar Operation onsider npn transistor Forward Active Operation I I I I β is typically very large I ipolar transistor can be thought of a current amplifier with a large current gain In contrast, MOS transistor is inherently a tramsconductance amplifier urrent flow in base is governed by the diode equation ollector current thus varies exponentially with V I I I ~ S e I ~ S V V e t V V t

37 ipolar Operation onsider npn transistor Forward Active Operation I I I I I β is typically very large ollector current thus varies exponentially with V I I ~ S e V V t This exponential relationship (in contrast to the square-law relationship for the MOSFT) provides a very large gain for the JT and this property is very useful for many applications!!

38 ipolar Models Simple dc Model I I V V following convention, pick I and I as dependent variables and V and V as independent variables

39 Simple dc model onsider npn transistor Forward Active Operation Summary: I I V t I ~ S e I ~ S kt q V V e t V V t I V I V This has the properties we are looking for but the variables we used in introducing these relationships are not standard It can be shown that I ~ S is proportional to the emitter area A Define I ~ 1 S and substitute this into the above equations J S A

40 Simple dc model npn transistor Forward Active Operation I I V t I ~ S e I ~ S kt q V V e t V V t I J I J V t kt q S S A β A e e V V V t V t J S is termed the saturation current density Process Parameters : J S,β Design Parameters: A nvironmental parameters and physical constants: k,t,q At room temperature, V t is around 26mV J S very small around.25fa/u 2

41 nd of Lecture 16

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