Radio Frequency Electronics
|
|
- Dana Bell
- 5 years ago
- Views:
Transcription
1 Radio Frequency Electronics Active Components I Harry Nyquist Born in 1889 in Sweden Received B.S. and M.S. from U. North Dakota Received Ph.D. from Yale Worked and Bell Laboratories for all of his career Known for Nyquist rate, Nyquist plots, Nyquist stability criterion, Johnson-Nyquist noise, Nyquist-Shannon Sampling heorem, and others Died in 1976 Image from Wikipedia 1
2 Ideal Current-Voltage Relationship heoretical ( ideal ) diode equation: i D vd nv I S e 1 i D = diode current I S = reverse-bias saturation current v D = voltage across diode V = hermal voltage V = k/e 26 mv at = 300 K n = Emission coefficient 1 n 2, unless otherwise noted, assume n = 1 In many/most cases a good approximation for a forward-biased diode is i I D S e v V D 2
3 AC equivalent Circuit i D g d I S e di dv v d / V D D D d Isd e d v / V I s i gd V D e Ise dv d v d / D V v dv vd / V D / V vd / V 1 r d I DQ 1 g d I D V DQ Slope V I DQ Chain rule Small-signal incremental resistance r d r d = V I DQ = 1 40I DQ 3
4 Forward-Biased Diode & Diffusion Capacitance More refined small-signal model r d C d 1 g d dq dv Even more complete small signal model D V I DQ ransit time I D V g d Change in minority carrier stored charge with time-varying voltage superimposed on dc quiescent voltage. he change in stored charge leads to a diode diffusion capacitance. Diffusion capacitance is normally much larger than junction capacitance r d C j C 1 g d d V I C V 1 V I D V j0 DQ R bi m g d 4
5 he Reverse-Biased pn Junction depletion p (conductive) n (conductive) Reverse voltage s electric field aids built-in electric field => increases depletion region C J = C J0 1 V A V bi 1 m+2 Varactor or varicap diodes C J0 = junction capacitance at zero applied voltage, and m is the junction grading coefficient. 5
6 Schottky Barrier Diode Semiconductor/metal junction I qv I o e / nk n is the ideality factor: 1-2 I o is much larger than in Si/Ge diodes Significantly lower turn-on voltage Fast switching when compared to pn junction diode. Storage time t s is essentially zero. Larger reverse saturation current Lower reverse breakdown voltage Widely-used in reverse-protection circuits Widely used in switching dc-dc converters Widely-used in RF as mixers 6
7 Schottky Barrier Diode Circuit model for Schottky diode under forward bias 7
8 Varactors uning diodes are manufactured to take advantage of the voltage dependence of the junction capacitance. hese diodes are called varactors or varicaps. C J = C J0 1 V A V bi 1 m+2 he tuning ratio (R) is a figure of merit, indicating how much one can change the capacitance. R C J(V A1 ) C J (V A2 ) V A1 V A2 1 m+1 Rs range from 2.4 to 25. Hyperabrupt junctions (m = 1) has largest R and is of significant commercial interest. Large, expensive mechanical variable capacitors have been made obsolete by varactors hrough-hole varactor 8
9 Example Varactor SD199E mm Cost less than $1 9
10 Varactor Application Variable capacitors are used in radio tuning circuits to select various stations and channels. Cellphones, WiFi, V,. 10
11 Varactor Diodes Coupling capacitors oscillator uning voltage Resonant tank More than 99% of radios (cell phones) use varactor diodes for tuning 11
12 Varactor Applications Pulses are on the order of 1 ns or less 12
13 Reverse Recovery Stored charge Current Question: What will happen to stored charge when diode is suddenly reverse-biased? Reverse recovery time for general-purpose diodes (1N4001) is a few μs Switching diodes can have reverse recovery times of few ns Schottky diodes can have reverse recovery times of 100 ps 13
14 Diode Reverse Recovery 10 V 60 Hz Circuit work in normal fashion 10 khz Circuit works in normal fashion, but reverse-recovery effect is starting to appear 14
15 Diode Reverse Recovery 10 V 500 khz he diode conducts, even when reverse biased 10 MHz Diode conducts in reverse direction for most of the cycles 15
16 RF PIN Diodes PIN diodes exploit the storage of carriers at the junction. hey consist intrinsic (I) semiconductor, sandwiched between a p and n material. hus, they are called p-i-n diodes or simply PIN diodes. When reverse-biased, PIN diodes behave much like other diodes, except that the capacitance does not change much with applied voltage. hey would make poor varactors. When PIN diodes are forward-biased, the intrinsic region is flooded with carriers. hey have poor reverse-recovery time, so that at high frequencies the stored charge does not have time to empty the diode. hus, the diode behaves as a resistor to RF. he value of the resistance can be controlled with the dc current. Images from RF Global Net 16
17 PIN Diodes Check out 17
18 PIN Diode Biasing Opens for RF Blocks dc Blocks dc Opens for RF Blocks dc Opens for RF Blocks dc Opens for RF Connects to ground for RF 18
19 V ctrl = 10 V V ctrl = +10 V Diode is forward-biased and functions as a resistor, shunting signal to ground V o = 6.6 V V o = 18 mv R D 0.1 Ω 19
20 RF PIN Diodes Applications PIN diodes are used in transceivers, protecting the receiver when the transceiver is transmitting. Remember how a λ 4 transformer works - one end sees the dual impedance at the other end. Apply dc when transmitting 20
21 RF PIN Diodes Applications PIN diodes are used in transceivers, protecting the receiver when the transceiver is transmitting. Remember how a λ 4 transformer works - one end sees the dual impedance at the other end. Apply dc when transmitting his diode is forwardbiased, and become a lowvalue resistance 21
22 RF PIN Diodes Applications PIN diodes are used in transceivers, protecting the receiver when the transceiver is transmitting. Remember how a λ 4 transformer works - one end sees the dual impedance at the other end. Apply dc when transmitting his diode is forwardbiased, and become a lowvalue resistance he λ 4 transformer makes the low impedance at the other end look like an open and blocks the transmitter RF 22
23 RF PIN Diodes Applications PIN diodes are used in transceivers, protecting the receiver when the transceiver is transmitting. Remember how a λ 4 transformer works - one end sees the dual impedance at the other end. Apply dc when transmitting his diode is also forwardbiased, and become a lowvalue resistance his diode is forwardbiased, and become a lowvalue resistance he λ 4 transformer makes the low impedance at the other end look like an open and blocks the transmitter RF 23
24 RF PIN Diodes Applications PIN diodes are used in transceivers, protecting the receiver when the transceiver is transmitting. Remember how a λ 4 transformer works - one end sees the dual impedance at the other end. Apply dc when transmitting his diode is also forwardbiased, and become a lowvalue resistance his short provides additional protection his diode is forwardbiased, and become a lowvalue resistance he λ 4 transformer makes the low impedance at the other end look like an open and blocks the transmitter RF 24
25 RF PIN Diodes Applications PIN diodes are used in transceivers, protecting the receiver when the transceiver is transmitting. Remember how a λ 4 transformer works - one end sees the dual impedance at the other end. Apply dc when transmitting his diode is forwardbiased, and become a lowvalue resistance he λ 4 transformer makes the low impedance at the other end look like an open and blocks the transmitter RF 25
26 RF PIN Diodes Applications PIN diodes are used in transceivers, protecting the receiver when the transceiver is transmitting. Remember how a λ 4 transformer works - one end sees the dual impedance at the other end. With no dc here both diodes have very high resistance, effectively disconnecting the transmitter from the antenna and connecting the receiver to the antenna 26
27 27
55:041 Electronic Circuits
55:041 Electronic Circuits Chapter 1 & 2 A. Kruger Diode Review, Page-1 Semiconductors licon () atoms have 4 electrons in valence band and form strong covalent bonds with surrounding atoms. Section 1.1.2
More informationRadio Frequency Electronics
Radio Frequency Electronics Active Components II Harry Nyquist Born in 1889 in Sweden Received B.S. and M.S. from U. North Dakota Received Ph.D. from Yale Worked and Bell Laboratories for all of his career
More information55:041 Electronic Circuits
55:041 Electronic Circuits Chapter 1 & 2 A. Kruger Diode Review, Page-1 Semiconductors licon () atoms have 4 electrons in valence band and form strong covalent bonds with surrounding atoms. Section 1.1.2
More informationExperiment Topic : FM Modulator
7-1 Experiment Topic : FM Modulator 7.1: Curriculum Objectives 1. To understand the characteristics of varactor diodes. 2. To understand the operation theory of voltage controlled oscillator (VCO). 3.
More informationChapter 6. FM Circuits
Chapter 6 FM Circuits Topics Covered 6-1: Frequency Modulators 6-2: Frequency Demodulators Objectives You should be able to: Explain the operation of an FM modulators and demodulators. Compare and contrast;
More informationsemiconductor p-n junction Potential difference across the depletion region is called the built-in potential barrier, or built-in voltage:
Chapter four The Equilibrium pn Junction The Electric field will create a force that will stop the diffusion of carriers reaches thermal equilibrium condition Potential difference across the depletion
More informationR. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder
R. W. Erickson Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder pn junction! Junction diode consisting of! p-doped silicon! n-doped silicon! A p-n junction where
More informationFET Channel. - simplified representation of three terminal device called a field effect transistor (FET)
FET Channel - simplified representation of three terminal device called a field effect transistor (FET) - overall horizontal shape - current levels off as voltage increases - two regions of operation 1.
More informationEE/COE 152: Basic Electronics. Lecture 3. A.S Agbemenu. https://sites.google.com/site/agbemenu/courses/ee-coe-152
EE/COE 152: Basic Electronics Lecture 3 A.S Agbemenu https://sites.google.com/site/agbemenu/courses/ee-coe-152 Books: Microelcetronic Circuit Design (Jaeger/Blalock) Microelectronic Circuits (Sedra/Smith)
More informationHOW DIODES WORK CONTENTS. Solder plated Part No. Lot No Cathode mark. Solder plated 0.
www.joeknowselectronics.com Joe Knows, Inc. 1930 Village Center Circle #3-8830 Las Vegas, NV 89134 How Diodes Work Copyright 2013 Joe Knows Electronics HOW DIODES WORK Solder plated 0.4 1.6 There are several
More informationElectronics I. Midterm #1
The University of Toledo s6ms_elct7.fm - Electronics I Midterm # Problems Points. 4 2. 5 3. 6 Total 5 Was the exam fair? yes no The University of Toledo s6ms_elct7.fm - 2 Problem 4 points For full credit,
More informationETEK TECHNOLOGY CO., LTD.
Trainer Model: ETEK DCS-6000-07 FSK Modulator ETEK TECHNOLOGY CO., LTD. E-mail: etek21@ms59.hinet.net mlher@etek21.com.tw http: // www.etek21.com.tw Digital Communication Systems (ETEK DCS-6000) 13-1:
More informationChapter 16 Other Two-Terminal Devices
Chapter 16 Other Two-Terminal Devices 1 Other Two-Terminal Terminal Devices Schottky diode Varactor diode Power diodes Tunnel diode Photodiode Photoconductive cells IR emitters Liquid crystal displays
More informationDE52/DC52 FUNDAMENTALS OF ELECTRICAL & ELECT ENGG DEC 2014
Q.2 a. Derive an expression for the current flowing at any instant during the discharge of a capacitor C across a resistor R. b. The coil of a moving coil instrument is wound with 50 turns of wire. The
More informationHomework Assignment 04
Question 1 (Short Takes) Homework Assignment 04 1. Consider the single-supply op-amp amplifier shown. What is the purpose of R 3? (1 point) Answer: This compensates for the op-amp s input bias current.
More informationPHYS225 Lecture 6. Electronic Circuits
PHYS225 Lecture 6 Electronic Circuits Transistors History Basic physics of operation Ebers-Moll model Small signal equivalent Last lecture Introduction to Transistors A transistor is a device with three
More informationEC T34 ELECTRONIC DEVICES AND CIRCUITS
RAJIV GANDHI COLLEGE OF ENGINEERING AND TECHNOLOGY PONDY-CUDDALORE MAIN ROAD, KIRUMAMPAKKAM-PUDUCHERRY DEPARTMENT OF ECE EC T34 ELECTRONIC DEVICES AND CIRCUITS II YEAR Mr.L.ARUNJEEVA., AP/ECE 1 PN JUNCTION
More informationElectronics I. Midterm #1
EECS:3400 Electronics I s5ms_elct7.fm - Section Electronics I Midterm # Problems Points. 4 2. 5 3. 6 Total 5 Was the exam fair? yes no EECS:3400 Electronics I s5ms_elct7.fm - 2 Problem 4 points For full
More informationEXPERIMENT 10: SCHOTTKY DIODE CHARACTERISTICS
EXPERIMENT 10: SCHOTTKY DIODE CHARACTERISTICS AIM: To plot forward and reverse characteristics of Schottky diode (Metal Semiconductor junction) APPARATUS: D.C. Supply (0 15 V), current limiting resistor
More informationChapter 3 SPECIAL PURPOSE DIODE
Chapter 3 SPECIAL PURPOSE DIODE 1 Inventor of Zener Diode Clarence Melvin Zener was a professor at Carnegie Mellon University in the department of Physics. He developed the Zener Diode in 1950 and employed
More informationEE70 - Intro. Electronics
EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π
More informationCode No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions
More informationITT Technical Institute. ET215 Devices I Chapter 2 Sections
ITT Technical Institute ET215 Devices I Chapter 2 Sections 2.8-2.10 Chapter 2 Section 2.8 Special-Purpose Diodes The preceding discussions of diodes has focused on applications that exploit the fact that
More informationDiodes (non-linear devices)
C H A P T E R 4 Diodes (non-linear devices) Ideal Diode Figure 4.2 The two modes of operation of ideal diodes and the use of an external circuit to limit (a) the forward current and (b) the reverse voltage.
More informationVaractor Frequency Tripler
Varactor Frequency Tripler Nonlinear Microwave Design Reto Zingg December 12 th 2 University of Colorado at Boulder Table of Contents 1 Project Goal 3 2 Frequency Multipliers 3 3 Varactor Frequency Multiplier
More informationCHAPTER 1 DIODE CIRCUITS. Semiconductor act differently to DC and AC currents
CHAPTER 1 DIODE CIRCUITS Resistance levels Semiconductor act differently to DC and AC currents There are three types of resistances 1. DC or static resistance The application of DC voltage to a circuit
More informationUniversità degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.
Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo Colantonio A.A. 2015-16 Introduction: materials Conductors e.g. copper or aluminum have a cloud
More informationUNIT VIII-SPECIAL PURPOSE ELECTRONIC DEVICES. 1. Explain tunnel Diode operation with the help of energy band diagrams.
UNIT III-SPECIAL PURPOSE ELECTRONIC DEICES 1. Explain tunnel Diode operation with the help of energy band diagrams. TUNNEL DIODE: A tunnel diode or Esaki diode is a type of semiconductor diode which is
More informationUnderstanding VCO Concepts
Understanding VCO Concepts OSCILLATOR FUNDAMENTALS An oscillator circuit can be modeled as shown in Figure 1 as the combination of an amplifier with gain A (jω) and a feedback network β (jω), having frequency-dependent
More informationSemiconductor Devices Lecture 5, pn-junction Diode
Semiconductor Devices Lecture 5, pn-junction Diode Content Contact potential Space charge region, Electric Field, depletion depth Current-Voltage characteristic Depletion layer capacitance Diffusion capacitance
More informationPaper-1 (Circuit Analysis) UNIT-I
Paper-1 (Circuit Analysis) UNIT-I AC Fundamentals & Kirchhoff s Current and Voltage Laws 1. Explain how a sinusoidal signal can be generated and give the significance of each term in the equation? 2. Define
More informationPhysics 160 Lecture 5. R. Johnson April 13, 2015
Physics 160 Lecture 5 R. Johnson April 13, 2015 Half Wave Diode Rectifiers Full Wave April 13, 2015 Physics 160 2 Note that there is no ground connection on this side of the rectifier! Output Smoothing
More informationDigital Integrated Circuits A Design Perspective. The Devices. Digital Integrated Circuits 2nd Devices
Digital Integrated Circuits A Design Perspective The Devices The Diode The diodes are rarely explicitly used in modern integrated circuits However, a MOS transistor contains at least two reverse biased
More informationAnalog Electronic Circuits
Analog Electronic Circuits Chapter 1: Semiconductor Diodes Objectives: To become familiar with the working principles of semiconductor diode To become familiar with the design and analysis of diode circuits
More informationLecture 9: Limiting and Clamping Diode Circuits. Voltage Doubler. Special Diode Types.
Whites, EE 320 Lecture 9 Page 1 of 8 Lecture 9: Limiting and Clamping Diode Circuits. Voltage Doubler. Special Diode Types. We ll finish up our discussion of diodes in this lecture by consider a few more
More informationP-N Diodes & Applications
P-N Diodes & Applications Outline Major junction diode applications are Electronics circuit control Rectifying (forward mode) Special break-down diodes: Zener and avalanche Switching Circuit tuning (varactor)
More informationEDC Lecture Notes UNIT-1
P-N Junction Diode EDC Lecture Notes Diode: A pure silicon crystal or germanium crystal is known as an intrinsic semiconductor. There are not enough free electrons and holes in an intrinsic semi-conductor
More informationWINTER 14 EXAMINATION. Model Answer. 1) The answers should be examined by key words and not as word-to-word as given in the
WINTER 14 EXAMINATION Subject Code: 17213 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)
More informationDepartment of Electrical Engineering IIT Madras
Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or
More informationSchottky Barrier Diode Video Detectors. Application Note 923
Schottky Barrier Diode Video Detectors Application Note 923 I. Introduction This Application Note describes the characteristics of Agilent Technologies Schottky Barrier Diodes intended for use in video
More informationEIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices
EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
More informationLaboratory No. 01: Small & Large Signal Diode Circuits. Electrical Enginnering Departement. By: Dr. Awad Al-Zaben. Instructor: Eng.
Laboratory No. 01: Small & Large Signal Diode Circuits Electrical Enginnering Departement By: Dr. Awad Al-Zaben Instructor: Eng. Tamer Shahta Electronics Laboratory EE 3191 February 23, 2014 I. OBJECTIVES
More informationPackage Lead Code Identification (Top View) SINGLE 3 SERIES 3 0, B 2, C
High Performance Schottky Diode for Transient Suppression Technical Data HBAT-5400/-5402 HBAT-540B/-540C Features Ultra-low Series Resistance for Higher Current Handling Low Capacitance Low Series Resistance
More information1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is
1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is A [ ]) the diode is open. B [ ]) the diode is shorted to ground. C [v]) the diode is
More informationCh5 Diodes and Diodes Circuits
Circuits and Analog Electronics Ch5 Diodes and Diodes Circuits 5.1 The Physical Principles of Semiconductor 5.2 Diodes 5.3 Diode Circuits 5.4 Zener Diode References: Floyd-Ch2; Gao-Ch6; 5.1 The Physical
More informationData Sheet. HSMS-282Y RF Schottky Barrier Diodes In Surface Mount SOD-523 Package. Features. Description. Package Marking and Pin Connections
HSMS-282Y RF Schottky Barrier Diodes In Surface Mount SOD-523 Package Data Sheet Description The HSMS-282Y of Avago Technologies is a RF Schottky Barrier Diode, featuring low series resistance, low forward
More informationDiodes and Applications
Diodes and Applications Diodes and Applications 2 1 Diode Operation 2 2 Voltage-Current (V-I) Characteristics 2 3 Diode Models 2 4 Half-Wave Rectifiers 2 5 Full-Wave Rectifiers 2 6 Power Supply Filters
More informationProject 6 Capacitance of a PN Junction Diode
Project 6 Capacitance of a PN Junction Diode OVERVIEW: In this project, we will characterize the capacitance of a reverse-biased PN diode. We will see that this capacitance is voltage-dependent and we
More informationES 330 Electronics II Homework # 1 (Fall 2016 SOLUTIONS)
SOLUTIONS ES 330 Electronics II Homework # 1 (Fall 2016 SOLUTIONS) Problem 1 (20 points) We know that a pn junction diode has an exponential I-V behavior when forward biased. The diode equation relating
More informationAPPLICATION NOTE ANxxxx. Understanding the Datasheet of a SiC Power Schottky Diode
APPLICATION NOTE ANxxxx CONTENTS 1 Introduction 1 2 Nomenclature 1 3 Absolute Maximum Ratings 2 4 Electrical Characteristics 5 5 Thermal / Mechanical Characteristics 7 6 Typical Performance Curves 8 7
More informationModule 04.(B1) Electronic Fundamentals
1.1a. Semiconductors - Diodes. Module 04.(B1) Electronic Fundamentals Question Number. 1. What gives the colour of an LED?. Option A. The active element. Option B. The plastic it is encased in. Option
More informationNAME: Last First Signature
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT
More informationVALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur
VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203. DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING SUBJECT QUESTION BANK : EC6201 ELECTRONIC DEVICES SEM / YEAR: II / I year B.E.ECE
More informationOBJECTIVE TYPE QUESTIONS
OBJECTIVE TYPE QUESTIONS Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called (A) avalanche breakdown. (B) zener breakdown. (C) breakdown by tunnelling.
More informationElectronics for Analog Signal Processing - I Prof. K. Radhakrishna Rao Department of Electrical Engineering Indian Institute of Technology - Madras
Electronics for Analog Signal Processing - I Prof. K. Radhakrishna Rao Department of Electrical Engineering Indian Institute of Technology - Madras Lecture # 11 Varactor Diode Today, it is going to be
More informationAE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014
Q.2 a. State and explain the Reciprocity Theorem and Thevenins Theorem. a. Reciprocity Theorem: If we consider two loops A and B of network N and if an ideal voltage source E in loop A produces current
More informationUnless otherwise specified, assume room temperature (T = 300 K).
ECE 3040 Dr. Doolittle Homework 4 Unless otherwise specified, assume room temperature (T = 300 K). 1) Purpose: Understanding p-n junction band diagrams. Consider a p-n junction with N A = 5x10 14 cm -3
More informationECE 304: Diode Capacitances
ECE 304: Diode Capacitances Diode (see S&S pp.147-167 for I-V behavior and pp. 200-208 for capacitances) The small-signal equivalent circuit for a semiconductor diode is shown in Figure 1. Its components
More informationCHAPTER 8 The PN Junction Diode
CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction
More information77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet
77 GHz VCO for Car Radar Systems Preliminary Data Sheet Operating Frequency: 76-77 GHz Tuning Range > 1 GHz Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive
More informationTo design Phase Shifter. To design bias circuit for the Phase Shifter. Realization and test of both circuits (Doppler Simulator) with
Prof. Dr. Eng. Klaus Solbach Department of High Frequency Techniques University of Duisburg-Essen, Germany Presented by Muhammad Ali Ashraf Muhammad Ali Ashraf 2226956 Outline 1. Motivation 2. Phase Shifters
More informationField-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
More informationChapter 8. Field Effect Transistor
Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There
More informationGlossary of VCO terms
Glossary of VCO terms VOLTAGE CONTROLLED OSCILLATOR (VCO): This is an oscillator designed so the output frequency can be changed by applying a voltage to its control port or tuning port. FREQUENCY TUNING
More informationThe Norwegian University of Science and Technology ENGLISH. EXAM IN TFY 4185 Measurement Technique/Måleteknikk. 1 Dec 2014 Time: 09:00-13:00
Page 1 of 9 The Norwegian University of Science and Technology ENGLISH Department of Physics Contact person: Name: Patrick Espy Tel: +47 73 55 10 95 (office) or +47 41 38 65 78 (mobile) EXAM IN TFY 4185
More informationReg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester
WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES
More informationKeywords: ISM, RF, transmitter, short-range, RFIC, switching power amplifier, ETSI
Maxim > Design Support > Technical Documents > Application Notes > Wireless and RF > APP 4929 Keywords: ISM, RF, transmitter, short-range, RFIC, switching power amplifier, ETSI APPLICATION NOTE 4929 Adapting
More informationSEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET
SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change
More informationHomework Assignment 06
Question 1 (2 points each unless noted otherwise) Homework Assignment 06 1. True or false: when transforming a circuit s diagram to a diagram of its small-signal model, we replace dc constant current sources
More informationCHAPTER 8 The pn Junction Diode
CHAPTER 8 The pn Junction Diode Consider the process by which the potential barrier of a pn junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction
More informationUNIT 4 BIASING AND STABILIZATION
UNIT 4 BIASING AND STABILIZATION TRANSISTOR BIASING: To operate the transistor in the desired region, we have to apply external dec voltages of correct polarity and magnitude to the two junctions of the
More informationVALLIAMMAI ENGINEERING COLLEGE
VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203. DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING SUBJECT QUESTION BANK : EC6401 ELECTRONICS CIRCUITS-II SEM / YEAR: IV / II year B.E.
More informationSRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and
More informationLecture 7:PN Junction. Structure, Depletion region, Different bias Conditions, IV characteristics, Examples
Lecture 7:PN Junction Structure, Depletion region, Different bias Conditions, IV characteristics, Examples PN Junction The diode (pn junction) is formed by dopping a piece of intrinsic silicon, such that
More informationFigure 1: Diode Measuring Circuit
Diodes, Page 1 Diodes V-I Characteristics signal diode Measure the voltage-current characteristic of a standard signal diode, the 1N914, using the circuit shown in Figure 1 below. The purpose of the back-to-back
More informationR. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder
R. W. Erickson Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder Inclusion of Switching Loss in the Averaged Equivalent Circuit Model The methods of Chapter 3 can
More informationReview Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination
Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Current Transport: Diffusion, Thermionic Emission & Tunneling For Diffusion current, the depletion layer is
More informationUNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering
UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 8 AMPLITUDE MODULATION AND DEMODULATION OBJECTIVES The focus of this lab is to familiarize the student
More informationUNIT-4. Microwave Engineering
UNIT-4 Microwave Engineering Microwave Solid State Devices Two problems with conventional transistors at higher frequencies are: 1. Stray capacitance and inductance. - remedy is interdigital design. 2.Transit
More informationPN Junction Diode Table of Contents. What Are Diodes Made Out Of?
PN Junction iode Table of Contents What are diodes made out of?slide 3 N-type materialslide 4 P-type materialslide 5 The pn junctionslides 6-7 The biased pn junctionslides 8-9 Properties of diodesslides
More informationR a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)
SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave
More informationLesson Plan. Electronics 1-Total 51 Hours
Lesson Plan. Electronics 1-Total 5s Unit I: Electrical Engineering materials:(10) Crystal structure & defects; Ceramic materials-structures, composites, processing and uses; Insulating laminates for electronics,
More informationPhotodiode: LECTURE-5
LECTURE-5 Photodiode: Photodiode consists of an intrinsic semiconductor sandwiched between two heavily doped p-type and n-type semiconductors as shown in Fig. 3.2.2. Sufficient reverse voltage is applied
More informationHMPP-386x Series MiniPak Surface Mount RF PIN Diodes
HMPP-86x Series MiniPak Surface Mount RF PIN Diodes Data Sheet Description/Applications These ultra-miniature products represent the blending of Avago Technologies proven semiconductor and the latest in
More informationELECTRONIC DEVICES AND CIRCUITS
ELECTRONIC DEVICES AND CIRCUITS 1. At room temperature the current in an intrinsic semiconductor is due to A. holes B. electrons C. ions D. holes and electrons 2. Work function is the maximum energy required
More informationSubject Code: Model Answer Page No: / N
Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate
More informationDEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
KINGS COLLEGE OF ENGINEERING PUNALKULAM. DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING QUESTION BANK SUBJECT CODE : EE1152 SEM / YEAR : II / I SUBJECT NAME : ELECTRIC CIRCUITS AND ELECTRON DEVICES
More information14.2 Photodiodes 411
14.2 Photodiodes 411 Maximum reverse voltage is specified for Ge and Si photodiodes and photoconductive cells. Exceeding this voltage can cause the breakdown and severe deterioration of the sensor s performance.
More informationA 7ns, 6mA, Single-Supply Comparator Fabricated on Linear s 6GHz Complementary Bipolar Process
A 7ns, 6mA, Single-Supply Comparator Fabricated on Linear s 6GHz Complementary Bipolar Process Introduction The is an ultrafast (7ns), low power (6mA), single-supply comparator designed to operate on either
More informationIENGINEERS- CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU
ELECTRONICS ENGINEERING Unit 1 Objectives Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called. (A) avalanche breakdown. (B) zener breakdown. (C) breakdown
More informationChapter 5: Diodes. I. Theory. Chapter 5: Diodes
Chapter 5: Diodes This week we will explore another new passive circuit element, the diode. We will also explore some diode applications including conversion of an AC signal into a signal that never changes
More informationDETECTOR. Figure 1. Diode Detector
The Zero Bias Schottky Diode Detector at Temperature Extremes Problems and Solutions Application Note 9 Abstract The zero bias Schottky diode detector is ideal for RF/ID tag applications where it can be
More informationUNIT 3: FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are
More informationVCO Design Project ECE218B Winter 2011
VCO Design Project ECE218B Winter 2011 Report due 2/18/2011 VCO DESIGN GOALS. Design, build, and test a voltage-controlled oscillator (VCO). 1. Design VCO for highest center frequency (< 400 MHz). 2. At
More informationPrepared by: Dr. Rishi Prakash, Dept of Electronics and Communication Engineering Page 1 of 5
Microwave tunnel diode Some anomalous phenomena were observed in diode which do not follows the classical diode equation. This anomalous phenomena was explained by quantum tunnelling theory. The tunnelling
More informationBasic Electronics Important questions
Basic Electronics Important questions B.E-2/4 Mech- B Faculty: P.Lakshmi Prasanna Note: Read the questions in the following order i. Assignment questions ii. Class test iii. Expected questions iv. Tutorials
More informationElectronic PRINCIPLES
MALVINO & BATES Electronic PRINCIPLES SEVENTH EDITION Chapter 13 JFETs Topics Covered in Chapter 13 Basic ideas Drain curves Transconductance curve Biasing in the ohmic region Biasing in the active region
More informationCHAPTER 8 The PN Junction Diode
CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction
More informationExam Model Answer. Question 1 (15 marks) Answer this question in the form of table. Choose the correct answer (only one answer is accepted).
Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year Communications. Answer all the following questions Illustrate your answers with sketches when necessary. The
More informationLong Range Passive RF-ID Tag With UWB Transmitter
Long Range Passive RF-ID Tag With UWB Transmitter Seunghyun Lee Seunghyun Oh Yonghyun Shim seansl@umich.edu austeban@umich.edu yhshim@umich.edu About RF-ID Tag What is a RF-ID Tag? An object for the identification
More information