Basic Electronics Important questions
|
|
- Joshua Osborne
- 6 years ago
- Views:
Transcription
1 Basic Electronics Important questions B.E-2/4 Mech- B Faculty: P.Lakshmi Prasanna Note: Read the questions in the following order i. Assignment questions ii. Class test iii. Expected questions iv. Tutorials For every unit. Unit1: ASSIGNMENT- UNIT 1 (CO1) 1. Explain the working of Bridge rectifier in detail with a neat circuit diagram and derive the expression for ripple factor and efficiency. 10M. 2. Explain the working of PN-junction diode in detail in forward and reverse bias conditions. 10M. 3. A 230v, 60 Hz voltage is applied to the primary of a step down center tapped transformer of a FWR with turns ratio 5:1 is connected to a load resistance of 1 KΩ i. Determine voltage across the load. ii. DC current through the load. If there is a resistance of 100Ω for the transformer secondary and diode forward Resistance is given as 10Ω. Short Answer Questions: 1. Write the expression of diode current equation and explain each term in detail. of Si and Ge diode. 3. Write the differences between Extrinsic and Intrinsic semiconductors. 4. What are P-type and N-type semiconductors? 5. Write in detail about Drift and Diffusion currents. 6. Draw the Energy Band Diagrams of an insulator, semiconductor, Conductor. 7. Write the differences between insulators, conductors and semi conductors. 8. Define the following i. Mobility ii. Conductivity. iii. Mass Action law. iv. Fermi level in semi conductors. v. Draw the diagrams for Fermi-level in Intrinsic, N-type and P-type semi conductors and write the formula for EF in the above two cases. 9. Define Hall Effect and write the uses or applications of Hall Effect. 10. What properties of semi conductor are defined from Hall Effect?
2 11. What is a diode and write the applications of Diode. 12. Draw the VI-Characteristics of a diode. And calculate Static and Dynamic resistances from the characteristics. 13. Write about diffusion and Transition capacitances of a diode. 14. Define avalanche breakdown and zener breakdown. 15. What is avalanche effect and zener effect? 16. What is a rectifier? Differentiate between Half Wave Rectifier and Full Wave Rectifier. 17. Draw the equivalent circuit of practical Diode under forward bias and Reverse Bias. 18. Draw the equivalent circuit of ideal Diode under forward bias and Reverse Bias. 19. Define Peak Inverse Voltage (PIV) of a diode in a rectifier circuit. Write the PIV values in HWR, FWR and Bridge Rectifier. 20. Define the following i. Ripple factor ii. Regulation or Percentage of Regulation. iii. Efficiency. iv. From factor and peak factor. v. RMS value and average value of voltage or current wave in half wave rectifier. 21. Write the applications of Zener Diode. 22. Explain how Zener diode works as a regulator. 23. What is the concentration of holes in Si crystals having donor concentration of 1.4 x /m 3 when the intrinsic carrier concentration is 1.4 x /m 3? Find the ratio of electron to hole concentration. 24. Problems on motilities of n-type and p-type semiconductors. 25. An n-type Ge crystal has a current density of 100A/m 2. The crystal has a resistivity of 0.5 Ω-m and electron mobility of 0.4 m 2 /V-s. Calculate the drift velocity and the time taken by the electron to travel 10 micrometer in the crystal. Assume q= 1.6 x C. 26. Problems on Fermi levels. 27. Problems on diode current equation in forward bias and reverse bias. 28. Write the advantages of full wave and bridge rectifiers over half wave rectifier. Long Answer Questions: 1. Define Hall Effect. Derive the expression for Hall voltage and hall coefficient and explain the uses of Hall Effect. 2. Derive the expression for transition and diffusion capacitances of a diode. 3. Explain the working of Zener Diode as a regulator. 4. Derive the expression for ripple factor and efficiency of a Half Wave rectifier and full wave rectifier. 5. Derive the expression for ripple factor and efficiency of a bridge rectifier.
3 6. Compare half wave rectifier, FWR and Bridge rectifier in terms of (ripple factor, percentage of regulation, efficiency, PIV, from factor and peak factor etc read the comparison table in text book). 7. How will you find the dynamic and static resistance of the diode using a graph? 8. What is an ideal diode? How can it be represented as a switch? Draw the equivalent circuit and its characteristics. 9. Draw the VI-Characteristics of a PN junction diode in forward and reverse biased conditions. Define forward resistance and reverse resistances and explain how they can be obtained from the characteristics. 10. Draw the circuit diagram of a half wave rectifier and explain its operation with wave forms. 11. Draw the circuit diagram of bridge rectifier and explain its operation with wave forms. 12. Draw the circuit diagram of a full wave rectifier and explain its operation with wave forms. What is its advantage over half wave rectifier? 13. What is static resistance of the diode? How will you find the dynamic resistance? 14. Explain the zener and avalanche thermal breakdown mechanisms. What will be their thermal coefficients? 15. How is a PN junction formed? Draw the circuit diagram of PN-Junction diode in forward bias and reverse bias. Explain its operation and give VI-characteristics. filter and explain its operation. 17. Explain bridge wave rectifier with circuit diagram and output wave forms. Find i. RMS value of current. ii. Ripple factor. iii. TUF. iv. Efficiency. v. Peak factor. 18. Explain avalanche breakdown and zener breakdown in PN diode. 19. Derive the expression for ripple factor of a FWR (or HWR/ Bridge) with shunt capacitance filter. 20. Derive the expression for ripple factor of a FWR (or HWR/ Bridge) with series inductance filter. 21. Derive the expression for ripple factor of a FWR (or HWR/ bridge) with LC π section filter. 22. Derive an expression for current in a diode. 23. Compare drift and diffusion currents. 24. Determine VA for
4 Tutorial -1 Questions 1. A Full Wave Rectifier has a Secondary Voltage of 230V from one-end of the transformer to ground. then calculate i. D.C load Current. ii. RMS value of output current. If diode has a resistance of 10Ω and the resistance of secondary winding is negligible. Given RL=5KΩ. 5M. 2. Find the conductivity of P-type semi conductor, if the concentration of holes is 4.2X10 22 atoms/m 3 and mobility of holes is 1800 Cm 2 /V. 5M. 3. Write the expression for Hall voltage and find Hall voltage if the Magnetic field strength of 1000 Wb/m 2 where the current flowing through the semi conducting material is 9A. Width of semi conducting material is 2m with resistivity of 100 Mhos-m. Also find the Hall coefficient? 5M. 4. Write a short note on P-type and N-type semi conductors. 5M. Prepared by ALL THE BEST P.Lakshmi Prasanna
5
6
7
8
9
10
R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)
SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave
More informationIENGINEERS- CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU
ELECTRONICS ENGINEERING Unit 1 Objectives Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called. (A) avalanche breakdown. (B) zener breakdown. (C) breakdown
More informationObjective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3.
Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. What is difference between electron and hole? 4. Why electrons have
More information2 MARKS EE2203 ELECTRONIC DEVICES AND CIRCUITS UNIT 1
2 MARKS EE2203 ELECTRONIC DEVICES AND CIRCUITS UNIT 1 1. Define PN junction. When a p type semiconductor is joined to a N type semiconductor the contact surface is called PN junction. 2. What is an ideal
More informationCode No: R Set No. 1
Code No: R05010204 Set No. 1 I B.Tech Supplimentary Examinations, Aug/Sep 2007 ELECTRONIC DEVICES AND CIRCUITS ( Common to Electrical & Electronic Engineering, Electronics & Communication Engineering,
More informationEC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS
EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS 1. List the PN diode parameters. 1. Bulk Resistance. 2. Static Resistance/Junction Resistance (or) DC Forward Resistance 3. Dynamic
More informationINSTITUTE OF AERONAUTICAL ENGINEERING Dundigal, Hyderabad
Course Name Course Code Class Branch INSTITUTE OF AERONAUTICAL ENGINEERING Dundigal, Hyderabad -500 043 AERONAUTICAL ENGINEERING TUTORIAL QUESTION BANK : ELECTRICAL AND ELECTRONICS ENGINEERING : A40203
More informationUNIT I PN JUNCTION DEVICES
UNIT I PN JUNCTION DEVICES 1. Define Semiconductor. 2. Classify Semiconductors. 3. Define Hole Current. 4. Define Knee voltage of a Diode. 5. What is Peak Inverse Voltage? 6. Define Depletion Region in
More informationSheet 2 Diodes. ECE335: Electronic Engineering Fall Ain Shams University Faculty of Engineering. Problem (1) Draw the
Ain Shams University Faculty of Engineering ECE335: Electronic Engineering Fall 2014 Sheet 2 Diodes Problem (1) Draw the i) Charge density distribution, ii) Electric field distribution iii) Potential distribution,
More informationVALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR- 603 203 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT I PN JUNCTION DEVICES 1. Define Semiconductor.
More informationINSTITUTE OF AERONAUTICAL ENGINEERING (AUTONOMOUS)
Name Code Class Branch INSTITUTE OF AERONAUTICAL ENGINEERING (AUTONOMOUS) Dundigal, Hyderabad -500 043 CIVIL ENGINEERING TUTORIAL QUESTION BANK : ELECTRICAL AND ELECTRONICS ENGINEERING : A30203 : II B.
More informationExamples to Power Supply
Examples to Power Supply Example-1: A center-tapped full-wave rectifier connected to a transformer whose each secondary coil has a r.m.s. voltage of 1 V. Assume the internal resistances of the diode and
More informationScheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.
Program Name Program Code Semester Course Title Scheme I Sample Question Paper : Diploma in Electronics Program Group : DE/EJ/IE/IS/ET/EN/EX : Second : Basic Electronics : 70 22216 Time: 3 Hrs. Instructions:
More informationHours / 100 Marks Seat No.
17215 16117 3 Hours / 100 Seat No. Instructions (1) All Questions are Compulsory. (2) Illustrate your answers with neat sketches wherever necessary. (3) Figures to the right indicate full marks. (4) Use
More informationDiodes (non-linear devices)
C H A P T E R 4 Diodes (non-linear devices) Ideal Diode Figure 4.2 The two modes of operation of ideal diodes and the use of an external circuit to limit (a) the forward current and (b) the reverse voltage.
More informationCode No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions
More informationLesson Plan. Week Theory Practical Lecture Day. Topic (including assignment / test) Day. Thevenin s theorem, Norton s theorem
Name of the faculty: GYANENDRA KUMAR YADAV Discipline: APPLIED SCIENCE(C.S.E,E.E.ECE) Year : 1st Subject: FEEE Lesson Plan Lesson Plan Duration: 31 weeks (from July, 2018 to April, 2019) Week Theory Practical
More informationFREQUENTLY ASKED QUESTIONS
FREQUENTLY ASKED QUESTIONS UNIT-1 SUBJECT : ELECTRONIC DEVICES AND CIRCUITS SUBJECT CODE : EC6202 BRANCH: EEE PART -A 1. What is meant by diffusion current in a semi conductor? (APR/MAY 2010, 2011, NOV/DEC
More informationMAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified)
WINTER 16 EXAMINATION Model Answer Subject Code: 17215 Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)
More informationINSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad
I INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad-500043 CIVIL ENGINEERING TUTORIAL QUESTION BANK Course Name : BASIC ELECTRICAL AND ELECTRONICS ENGINEERING Course Code : AEE018
More informationHomework Assignment 04
Question 1 (Short Takes) Homework Assignment 04 1. Consider the single-supply op-amp amplifier shown. What is the purpose of R 3? (1 point) Answer: This compensates for the op-amp s input bias current.
More informationSETH JAI PARKASH POLYTECHNIC, DAMLA
SETH JAI PARKASH POLYTECHNIC, DAMLA NAME OF FACULTY----------SANDEEP SHARMA DISCIPLINE---------------------- E.C.E (S.F) SEMESTER-------------------------2 ND SUBJECT----------------------------BASIC ELECTRONICS
More informationElectronic Circuits I. Instructor: Dr. Alaa Mahmoud
Electronic Circuits I Instructor: Dr. Alaa Mahmoud alaa_y_emam@hotmail.com Chapter 27 Diode and diode application Outline: Semiconductor Materials The P-N Junction Diode Biasing P-N Junction Volt-Ampere
More informationDEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING Question Bank
Programme Subject DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING Question Bank Semester / Branch : BE : GE6252-BASICELECTRICALANDELECTRONICS ENGINEERING : II-Civil and Mechanical Engineering PART
More informationINSTITUTE OF AERONAUTICAL ENGINEERING (AUTONOMOUS) Dundigal, Hyderabad
INSTITUTE OF AERONAUTICAL ENGINEERING (AUTONOMOUS) Dundigal, Hyderabad - 500 043 CIVIL ENGINEERING ASSIGNMENT Name : Electrical and Electronics Engineering Code : A30203 Class : II B. Tech I Semester Branch
More information(A) im (B) im (C)0.5 im (D) im.
Dr. Mahalingam College of Engineering and Technology, Pollachi. (An Autonomous Institution affiliated to Anna University) Regulation 2014 Fourth Semester Electrical and Electronics Engineering 141EE0404
More informationCh5 Diodes and Diodes Circuits
Circuits and Analog Electronics Ch5 Diodes and Diodes Circuits 5.1 The Physical Principles of Semiconductor 5.2 Diodes 5.3 Diode Circuits 5.4 Zener Diode References: Floyd-Ch2; Gao-Ch6; 5.1 The Physical
More informationUNIT I Introduction to DC & AC circuits
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: Basic Electrical and Electronics Engineering (16EE207) Year & Sem: II-B.
More informationSRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and
More informationSUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N
Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate
More informationTheory. Week. Lecture Day. TOPICS Week TOPICS. Intoduction Overview of DC Circuits. 1.use of measuring instruments-multimeter,cro etc.
Name of faculty: Sanjay Puri Discipline: Applied Science (Electronics and Communication Engg.) Subject: Fundamentals of Electrical and Electronics Engg. Lesson Plan Duration: 36 weeks (From August 2018
More informationINSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad
INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad -500 043 COMPUTER SCIENCE AND ENGINEERING TUTORIAL QUESTION BANK Course Name : ELECTRONIC DEVICES AND CIRCUITS Course Code : A30404
More informationCENTURION UNIVERSITY OF TECHNOLOGY AND MANAGEMENT SCHOOL OF ENGINEERING & TECHNOLOGYDEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING
CENTURION UNIVERSITY OF TECHNOLOGY AND MANAGEMENT SCHOOL OF ENGINEERING & TECHNOLOGYDEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING ELECTRONIC DEVICES Section: ECE SEM: II PART-A 1. a) In a N-type
More informationWINTER 14 EXAMINATION. Model Answer. Subject Code: ) The answers should be examined by key words and not as word-to-word as given in the
Subject Code: 17215 WINTER 14 EXAMINATION Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)
More informationSEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET
SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change
More informationAnalog Electronic Circuits
Analog Electronic Circuits Chapter 1: Semiconductor Diodes Objectives: To become familiar with the working principles of semiconductor diode To become familiar with the design and analysis of diode circuits
More informationBASIC ELECTRONICS ENGINEERING
BASIC ELECTRONICS ENGINEERING Objective Questions UNIT 1: DIODES AND CIRCUITS 1 2 3 4 5 6 7 8 9 10 11 12 The process by which impurities are added to a pure semiconductor is A. Diffusing B. Drift C. Doping
More informationScheme - G. Sample Test Paper-I
Scheme - G Sample Test Paper-I Course Name : Electronics Engineering Group Course Code : DE/ED/EI/EJ/EN/ET/EV/EX/IC/IE/IS/IU/MU Semester : Second Subject Title : Elements of Electronics 17215 Marks : 25
More informationPART-A UNIT I Introduction to DC & AC circuits
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code : Basic Electrical and Electronics Engineering (16EE207)
More informationSIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road QUESTION BANK (DESCRIPTIVE) PART - A
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: Basic Electrical and Electronics Engineering (16EE207) Year & Sem: II-B.
More informationFET Channel. - simplified representation of three terminal device called a field effect transistor (FET)
FET Channel - simplified representation of three terminal device called a field effect transistor (FET) - overall horizontal shape - current levels off as voltage increases - two regions of operation 1.
More informationSYLLABUS OSMANIA UNIVERSITY (HYDERABAD)
UNIT - 1 i SYLLABUS OSMANIA UNIVERSITY (HYDERABAD) JUNCTION DIODE Different Types of PN Junction Formation Techniques, PN Junction Characteristics, Biasing, Band Diagrams and Current Flow, Diode Current
More informationElectronics I. Midterm #1
EECS:3400 Electronics I s5ms_elct7.fm - Section Electronics I Midterm # Problems Points. 4 2. 5 3. 6 Total 5 Was the exam fair? yes no EECS:3400 Electronics I s5ms_elct7.fm - 2 Problem 4 points For full
More informationSemiconductor Devices Lecture 5, pn-junction Diode
Semiconductor Devices Lecture 5, pn-junction Diode Content Contact potential Space charge region, Electric Field, depletion depth Current-Voltage characteristic Depletion layer capacitance Diffusion capacitance
More informationGUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013
Seat No.: Enrolment No. GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013 Subject Code: 131101 Date: 31-05-2013 Subject Name: Basic Electronics Time: 02.30 pm - 05.00 pm Total
More information1. (a) Determine the value of Resistance R and current in each branch when the total current taken by the curcuit in figure 1a is 6 Amps.
Code No: 07A3EC01 Set No. 1 II B.Tech I Semester Regular Examinations, November 2008 ELECTRICAL AND ELECTRONICS ENGINEERING ( Common to Civil Engineering, Mechanical Engineering, Mechatronics, Production
More informationChapter 2. Diodes & Applications
Chapter 2 Diodes & Applications The Diode A diode is made from a small piece of semiconductor material, usually silicon, in which half is doped as a p region and half is doped as an n region with a pn
More informationجامعة اإلسكندرية كلية الهندسة قسم الهندسة الكهربية أبريل ٢٠١٥
Alexandria University Faculty of Engineering Electrical Engineering Department April 2015 1a EE 132 Electronic Devices and Circuits First Year Time allowed: 1½ hours جامعة اإلسكندرية كلية الهندسة قسم الهندسة
More informationUNIT IX ELECTRONIC DEVICES
UNT X ELECTRONC DECES Weightage Marks : 07 Semiconductors Semiconductors diode-- characteristics in forward and reverse bias, diode as rectifier. - characteristics of LED, Photodiodes, solarcell and Zener
More informationElectronics The basics of semiconductor physics
Electronics The basics of semiconductor physics Prof. Márta Rencz, Gábor Takács BME DED 17/09/2015 1 / 37 The basic properties of semiconductors Range of conductivity [Source: http://www.britannica.com]
More informationDownloaded from
SOLID AND SEMICONDUCTOR DEVICES (EASY AND SCORING TOPIC) 1. Distinction of metals, semiconductor and insulator on the basis of Energy band of Solids. 2. Types of Semiconductor. 3. PN Junction formation
More informationIntrinsic Semiconductor
Semiconductors Crystalline solid materials whose resistivities are values between those of conductors and insulators. Good electrical characteristics and feasible fabrication technology are some reasons
More informationDiscuss the basic structure of atoms Discuss properties of insulators, conductors, and semiconductors
Discuss the basic structure of atoms Discuss properties of insulators, conductors, and semiconductors Discuss covalent bonding Describe the properties of both p and n type materials Discuss both forward
More informationClass XII - Physics Semiconductor Electronics. Chapter-wise Problems
lass X - Physics Semiconductor Electronics Materials, Device and Simple ircuit hapter-wise Problems Multiple hoice Question :- 14.1 The conductivity of a semiconductor increases with increase in temperature
More informationElectronic Circuits I - Tutorial 03 Diode Applications I
Electronic Circuits I - Tutorial 03 Diode Applications I -1 / 13 - T & F # Question 1 A diode can conduct current in two directions with equal ease. F 2 When reverse-biased, a diode ideally appears as
More informationEE/COE 152: Basic Electronics. Lecture 3. A.S Agbemenu. https://sites.google.com/site/agbemenu/courses/ee-coe-152
EE/COE 152: Basic Electronics Lecture 3 A.S Agbemenu https://sites.google.com/site/agbemenu/courses/ee-coe-152 Books: Microelcetronic Circuit Design (Jaeger/Blalock) Microelectronic Circuits (Sedra/Smith)
More informationLesson Plan. Electronics 1-Total 51 Hours
Lesson Plan. Electronics 1-Total 5s Unit I: Electrical Engineering materials:(10) Crystal structure & defects; Ceramic materials-structures, composites, processing and uses; Insulating laminates for electronics,
More information1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is
1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is A [ ]) the diode is open. B [ ]) the diode is shorted to ground. C [v]) the diode is
More informationMAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified)
WINTER 16 EXAMINATION Model Answer Subject Code: 17213 Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)
More informationUnless otherwise specified, assume room temperature (T = 300 K).
ECE 3040 Dr. Doolittle Homework 4 Unless otherwise specified, assume room temperature (T = 300 K). 1) Purpose: Understanding p-n junction band diagrams. Consider a p-n junction with N A = 5x10 14 cm -3
More informationElectronic Devices 1. Current flowing in each of the following circuits A and respectively are: (Circuit 1) (Circuit 2) 1) 1A, 2A 2) 2A, 1A 3) 4A, 2A 4) 2A, 4A 2. Among the following one statement is not
More informationEJERCICIOS DE COMPONENTES ELECTRÓNICOS. 1 er cuatrimestre
EJECICIOS DE COMPONENTES ELECTÓNICOS. 1 er cuatrimestre 2 o Ingeniería Electrónica Industrial Juan Antonio Jiménez Tejada Índice 1. Basic concepts of Electronics 1 2. Passive components 1 3. Semiconductors.
More informationCOURSE SCHEDULE SECTION. A (Room No: TP 301) B (Room No: TP 302) Hours Timings Hours Timings. Name of the staff Sec Office Office Hours Mail ID
SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY SCHOOL OF ELECTRONICS AND COMMUNICATION ENGINEERING DEPARTMENT OF ECE COURSE PLAN Course Code : IT0201 Course Title : Electron Devices and Circuits
More informationFINALTERM EXAMINATION. Spring PHY301- Circuit Theory
Date 14/2/2013 Eini FINALTERM EXAMINATION Spring 2010 PHY301- Circuit Theory Time: 90 min Marks: 60 Question No: 1 If we connect 3 capacitors in parallel, the combined effect of all these capacitors will
More informationEXPERIMENTS USING SEMICONDUCTOR DIODES
EXPERIMENT 9 EXPERIMENTS USING SEMICONDUCTOR DIODES Semiconductor Diodes Structure 91 Introduction Objectives 92 Basics of Semiconductors Revisited 93 A p-n Junction Operation of a p-n Junction A Forward
More informationsemiconductor p-n junction Potential difference across the depletion region is called the built-in potential barrier, or built-in voltage:
Chapter four The Equilibrium pn Junction The Electric field will create a force that will stop the diffusion of carriers reaches thermal equilibrium condition Potential difference across the depletion
More informationVALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur
VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203. DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING SUBJECT QUESTION BANK : EC6201 ELECTRONIC DEVICES SEM / YEAR: II / I year B.E.ECE
More informationWish you all Very Happy New Year
Wish you all Very Happy New Year Course: Basic Electronics (EC21101) Course Instructors: Prof. Goutam Saha (Sec. 2), Prof. Shailendra K. Varshney (Sec. 1), Prof. Sudip Nag (Sec. 3 ), Prof. Debashish Sen
More informationEnergy band diagrams Metals: 9. ELECTRONIC DEVICES GIST ρ= 10-2 to 10-8 Ω m Insulators: ρ> 10 8 Ω m Semiconductors ρ= 1 to 10 5 Ω m 109 A. Intrinsic semiconductors At T=0k it acts as insulator At room
More informationOBJECTIVE TYPE QUESTIONS FOR PRACTICAL EXAMINATION Subject : Electronics-I ( EC 112)
OBJECTIVE TYPE QUESTIONS FOR PRACTICAL EXAMINATION Subject : Electronics-I ( EC 112) 1. Which mathematical notation specifies the condition of periodicity for a continuous time signal? a. x(t) = x( t +T)
More informationSEMICONDUCTOR EECTRONICS MATERIAS, DEVICES AND SIMPE CIRCUITS Important Points: 1. In semiconductors Valence band is almost filled and the conduction band is almost empty. The energy gap is very small
More informationEDC Lecture Notes UNIT-1
P-N Junction Diode EDC Lecture Notes Diode: A pure silicon crystal or germanium crystal is known as an intrinsic semiconductor. There are not enough free electrons and holes in an intrinsic semi-conductor
More informationDE52/DC52 FUNDAMENTALS OF ELECTRICAL & ELECT ENGG DEC 2014
Q.2 a. Derive an expression for the current flowing at any instant during the discharge of a capacitor C across a resistor R. b. The coil of a moving coil instrument is wound with 50 turns of wire. The
More informationTerm Roadmap : Materials Types 1. INSULATORS
Term Roadmap : Introduction to Signal Processing Differentiating and Integrating Circuits (OpAmps) Clipping and Clamping Circuits(Diodes) Design of analog filters Sinusoidal Oscillators Multivibrators
More informationChapter 1: Semiconductor Diodes
Chapter 1: Semiconductor Diodes Diodes The diode is a 2-terminal device. A diode ideally conducts in only one direction. 2 Diode Characteristics Conduction Region Non-Conduction Region The voltage across
More informationDHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS
DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS UNIT-I - PN DIODEAND ITSAPPLICATIONS 1. What is depletion region in PN junction?
More informationSUMMER 14 EXAMINATION Model Answer. Subject Code: Page No: 1/
SUMMER 14 EXAMINATION Model Answer Subject Code: 17215 Page No: 1/ Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer
More informationSection:A Very short answer question
Section:A Very short answer question 1.What is the order of energy gap in a conductor, semi conductor, and insulator?. Conductor - no energy gap Semi Conductor - It is of the order of 1 ev. Insulator -
More informationEXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10
DIODE CHARACTERISTICS AND CIRCUITS EXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10 In this experiment we will measure the I vs V characteristics of Si, Ge, and Zener p-n junction diodes, and
More informationElectronics I. Midterm #1
The University of Toledo s6ms_elct7.fm - Electronics I Midterm # Problems Points. 4 2. 5 3. 6 Total 5 Was the exam fair? yes no The University of Toledo s6ms_elct7.fm - 2 Problem 4 points For full credit,
More informationQUESTION BANK SUBJECT: ELECTRONIC DEVICES AND CIRCUITS
QUESTION BANK SUBJECT: ELECTRONIC DEVICES AND CIRCUITS UNIT-I PN JUNCTION DIODE 1. Derive an expression for total diode current starting from Boltzmann relationship in terms of the applied voltage. Nov
More informationElectronic devices-i. Difference between conductors, insulators and semiconductors
Electronic devices-i Semiconductor Devices is one of the important and easy units in class XII CBSE Physics syllabus. It is easy to understand and learn. Generally the questions asked are simple. The unit
More informationLecture -1: p-n Junction Diode
Lecture -1: p-n Junction Diode Diode: A pure silicon crystal or germanium crystal is known as an intrinsic semiconductor. There are not enough free electrons and holes in an intrinsic semi-conductor to
More informationMAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Subject Code: Model Answer Page No: 1/
MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC 27001 2005 Certified) SUMMER 13 EXAMINATION Subject Code: 12025 Model Answer Page No: 1/ Important Instructions to examiners: 1) The
More informationELECTRONIC DEVICES AND CIRCUITS
ELECTRONIC DEVICES AND CIRCUITS 1. At room temperature the current in an intrinsic semiconductor is due to A. holes B. electrons C. ions D. holes and electrons 2. Work function is the maximum energy required
More informationDigital Integrated Circuits EECS 312
14 12 10 8 6 Fujitsu VP2000 IBM 3090S Pulsar 4 IBM 3090 IBM RY6 CDC Cyber 205 IBM 4381 IBM RY4 2 IBM 3081 Apache Fujitsu M380 IBM 370 Merced IBM 360 IBM 3033 Vacuum Pentium II(DSIP) 0 1950 1960 1970 1980
More informationReg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester
WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES
More informationEXPERIMENT 3 Half-Wave and Full-Wave Rectification
Name & Surname: ID: Date: EXPERIMENT 3 Half-Wave and Full-Wave Rectification Objective To calculate, compare, draw, and measure the DC output voltages of half-wave and full-wave rectifier circuits. Tools
More informationEXPERIMENT 5 : THE DIODE
EXPERIMENT 5 : THE DIODE Component List Resistors, one of each o 1 10 10W o 1 1k o 1 10k 4 1N4004 (I max = 1A, PIV = 400V) Diodes Center tap transformer (35.6V pp, 12.6 V RMS ) 100 F Electrolytic Capacitor
More informationUniversità degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.
Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo Colantonio A.A. 2015-16 Introduction: materials Conductors e.g. copper or aluminum have a cloud
More informationPhotodiode: LECTURE-5
LECTURE-5 Photodiode: Photodiode consists of an intrinsic semiconductor sandwiched between two heavily doped p-type and n-type semiconductors as shown in Fig. 3.2.2. Sufficient reverse voltage is applied
More informationSemiconductor Devices
Semiconductor Devices Modelling and Technology Source Electrons Gate Holes Drain Insulator Nandita DasGupta Amitava DasGupta SEMICONDUCTOR DEVICES Modelling and Technology NANDITA DASGUPTA Professor Department
More informationDigital Integrated Circuits A Design Perspective. The Devices. Digital Integrated Circuits 2nd Devices
Digital Integrated Circuits A Design Perspective The Devices The Diode The diodes are rarely explicitly used in modern integrated circuits However, a MOS transistor contains at least two reverse biased
More informationEC6202- ELECTRONIC DEVICES AND CIRCUITS TWO MARK QUESTIONS AND ANSWERS UNIT- 1 PN JUNCTION DEVICES
EC6202- ELECTRONIC DEVICES AND CIRCUITS TWO MARK QUESTIONS AND ANSWERS UNIT- 1 PN JUNCTION DEVICES 1. What is an ideal diode? An ideal diode is one which offers zero resistance when forward biased and
More informationCONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34
CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials
More informationEE70 - Intro. Electronics
EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π
More informationLesson 08. Name and affiliation of the author: Professor L B D R P Wijesundera Department of Physics, University of Kelaniya.
Lesson 08 Title of the Experiment: Identification of active components in electronic circuits and characteristics of a Diode, Zener diode and LED (Activity number of the GCE Advanced Level practical Guide
More informationOBJECTIVE TYPE QUESTIONS
OBJECTIVE TYPE QUESTIONS Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called (A) avalanche breakdown. (B) zener breakdown. (C) breakdown by tunnelling.
More informationEC8351-ELECTRON DEVICES AND CIRCUITS TWO MARK QUESTIONS AND ANSWERS UNIT-I PN JUNCTION DEVICES
TWO MARK QUESTIONS AND ANSWERS UNIT-I PN JUNCTION DEVICES 1) Define semiconductor. Semiconductor is a substance, which has resistivity in between Conductors and insulators. Eg. Germanium, Silicon. 2) Define
More informationUNIT V - RECTIFIERS AND POWER SUPPLIES
UNIT V - RECTIFIERS AND POWER SUPPLIES OBJECTIVE On the completion of this unit the student will understand CLASSIFICATION OF POWER SUPPLY HALF WAVE, FULL WAVE, BRIDGE RECTIFER AND ITS RIPPLE FACTOR C,
More information