Data Sheet. HSMS-282Y RF Schottky Barrier Diodes In Surface Mount SOD-523 Package. Features. Description. Package Marking and Pin Connections

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Henry Pearson
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1 HSMS-282Y RF Schottky Barrier Diodes In Surface Mount SOD-523 Package Data Sheet Description The HSMS-282Y of Avago Technologies is a RF Schottky Barrier Diode, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. The device is housed in a miniature low cost surface mount SOD-523 package. This miniature package is particularly useful in the application where board space is the major concern.applicationsthe HSMS-282Y is specially designed for both analog and digital applications. The typical applications are mixing, detecting, switching, sampling, clamping and wave shaping. Table. Absolute Ratings [] at Tc = +25 C Symbol Parameter Unit Max Rating I F Forward Current ( µs Pulse) Amp P IV Peak Inverse Voltage V 5 T J Junction Temperature C 50 T STG Storage Temperature C -65 to 50 qjb Thermal Resistance [2] C/W 75 Features Space saving SOD-523 package Low Turn-On Voltage Low Series Resistance Tape and Reel Options Available MSL & Lead Free Package Marking and Pin Connections cathode Anode Note: Package marking provides orientation and identification Y = Device Code? = Month code indicates the month of manufacture Notes:. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. Thermal Resistance is measured from junction to board using IR microscopy method.

2 Table 2. Electrical Specifications at Tc = +25 C Test Conditions Minimum Breakdown Voltage V BR (V) Forward Voltage V F (mv) Forward Voltage V F (V) Reverse Leakage I R (na) Capacitance C T (pf) Typical Dynamic Resistance R D (Ohm) [2] V R = V BR Measure I R 00mA I F = ma I F = 0mA V R = V V R = 0 Vf = MHz I F = 5mA Notes :. Effective carrier lifetime(τ) for the diode is 00 ps maximum measured with Krakaver method at 5 ma 2. RD = Rs C and I F = 5 ma Typical Performance Curves at Tc = +25 C o C FORWARD CURRENT(mA) 0 25 o C -25 o C 75 o C o 25 C FORWARD VOLTAGE (V) Figure. Forward Currect vs.forward Voltage at temperature REVERSE CURRENT (ma) o C o C REVERSE VOLTAGE (V) Figure 2. Reverse Current vs. Reverse Voltage at temperature DYNAMIC RESISTANCE (OHMS) FORWARD CURRENT (ma) Figure 3. Dynamic Resistance vs. Forward Current TOTAL CAPACITANCE (pf) REVERSE VOLTAGE (V) Figure 4. Total Capacitance vs. Reverse Bias at MHz 2

+75 o C +25 o C -25 o C 0 OUTPUT VOLTAGE (V) 0 DC Bias = 3 µa OUTPUT VOLTAGE (V) 0 00 000 00-0 -30-20 -0 0 INPUT POWER (dbm) Figure 5. Typical Output Voltage vs.

3 +75 o C +25 o C -25 o C 0 OUTPUT VOLTAGE (V) 0 DC Bias = 3 µa OUTPUT VOLTAGE (V) INPUT POWER (dbm) Figure 5. Typical Output Voltage vs. Input Power, Small Signal Detector Operating at 850 MHz INPUT POWER (dbm) Figure 6. Typical Output Voltage vs. Input Power, Large Signal Detector Operating at 95 MHz. Linear Equivalent Circuit Model Diode Chip R S R S = series resistance (see Table of SPICE parameters) C j = junction capacitance (see Table of SPICE parameters) R j = 8.33 X 0-5 nt I b + I s where I b = externally applied bias current in amps I s = saturation current (see table of SPICE parameters) T = temperature, K n = ideality factor (see table of SPICE parameters) R j C j SPICE Parameters Parameter Units HSMS-282Y B V V 5 C J0 pf 7 E G ev 69 I BV A E-4 I S A 2.2E-8 N.08 R S Ω 6.0 P B V 65 P T 2 M 5 Note: To effectively model the packaged HSMS-282x product, please refer to Application Note AN24.

4 Package Outline and Dimension PCB Footprint C E CATHODE MARK B A. 2 Unit : mm D F DIM A B C D E MILLIMETERS.60 ± 0.20 ± 0 80 ± 0 30 ± ± 0 F 3 ± 05 Device Orientation REEL Top View 4 mm End View USER FEED DIRECTION COVER TAPE CARRIER TAPE 8 mm

5 Tape Dimension Specification < Unit : mm > hole pitch : 50 Pitch Tolerance : 200 ± 3 General Tolerance : ± Surface resistance : 04 ~ 08 W/cm3 Part Number Ordering Information Part number No. of Units Container HSMS-282Y-BLKG 00 Anti-static bag HSMS-282Y-TRG reel For product information and a complete list of distributors, please go to our web site: 5 Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright 2007 Avago Technologies Limited. All rights reserved. Obsoletes AV0-092EN AV02-048EN - February 5, 2007

Data Sheet. BTx. HSMP-3866 Quad PIN Diode Pi Attenuator 300 khz to 3 GHz in SOT 25 Package. Description. Features. Specification At 1 GHz, V+=1.

Data Sheet. BTx. HSMP-3866 Quad PIN Diode Pi Attenuator 300 khz to 3 GHz in SOT 25 Package. Description. Features. Specification At 1 GHz, V+=1. HSMP-3866 Quad PIN Diode Pi Attenuator 300 khz to 3 GHz in SOT 25 Package Data Sheet Description Avago Technology s HSMP-3866 is a wideband, low insertion loss, low current, Quad PIN Diode Pi Attenuator