C2X. CMS-825X Series. Surface Mount Zero Bias Schottky Detector Diodes. Technical Data. Features: Description:
|
|
|
- Ross Garrett
- 6 years ago
- Views:
Transcription
1 Technical Data CMS-825X Series Surface Mount Zero Bias Schottky Detector Diodes Description: The CMS-825X line of zero bias Schottky detector diodes by Calmos have been engineered for use in small signal (P in <-5 dbm) applications at frequencies below 2.0 GHz. The ideal applications are for RF/ID and RF Tags where primary (DC bias) power is not available. At Calmos Technology, our commitment to quality components gives our customers a reliable source of RF products. Manufacturing techniques assure that when two diodes are mounted into a single package they are taken from adjacent sites on the wafer. The various package configurations available provide a low cost solution to a wide variety of design problems. Features: Surface Mount SOT-2 Pin Packages SOT-4 Packages 4 Pin Packages Miniature SOT-2/6 Pin and 6 Pin Packages High Detection Sensitivity: up to 50mV/µW at 95 MHz SOT-2/SOT-4 Package SINGLE SOT-2 Package Lead Code Identification SINGLE SERIES Low Flicker Noise: -65 dbv / Hz at 00Hz Low reverse leakage Matched Diodes 2 CMS High Thermal Conductivity for greater Power Dissipation SERIES 2 CMS 8252 UNCONNECTED PAIR 4 CMS 825 SOT-6 Package 6 Lead Code Identification UNCONNECTED TRIO CMS825 BRIDGE QUAD DUAL SERIES CONNECTED PAIR Pin Connections and Package Marking 2 C2X CMS CMS 8256 CMS CMS 8252D Notes:. Package marking provides orientation and identification 2. See Electrical Specifications for appropriate package marking Calmos : Datasheets : DTS-825X Rev A
2 RF Electrical Specifications, T C = +25 C, Single Diode Part Number CMS- Typical Tangential Sensitivity TSS f = 95 MHz Typical Voltage Sensitivity f = 95 MHz Typical Video Resistance RV (KO) D Test Conditions Video Bandwidth = 2 MHz Zero Bias Power in = -40 dbm R L = 00 KO, Zero Bias Zero Bias DC Electrical Specifications, T C = +25 C, Single Diode Part Number CMS- Package Marking Code [] Configuration Maximum Forward Voltage V F (mv) Typical Capacitance C T (pf) D C0H CH C2H CH C4H C5H C6H C2D Single Single Series Pair [2,] Series Pair [2,] Bridge Quad Unconnected Pair [2,] Unconnected Trio Dual Series Connected Pair Test Conditions I F =0. ma I F =.0 ma V F =-0.5V to -.0V F= MHz DC Electrical Specifications, T C = +25 C, Diode Pairs Part Number CMS- Maximum Forward Voltage Difference V F (mv) Maximum Capacitance Difference C T (pf) Test Conditions I F =.0mA V F = -0.5V F = MHz
3 Equivalent Linear Circuit Model CMS-825x chip SPICE Parameters Parameter Units CMS-825x R j B V V 5.0 C J0 pf 0.75 R S E G ev 0.68 I BV A 2.9 E-4 C j I S A 2.9 E-6 R S =series resistance (see Table of SPICE parameters) C J = junction capacitance (see Table of SPICE parameters) R J = 8. X 0-5 nt I b + I s N R S P B (V J ) O V where I b = externally applied bias current in amps I s = saturation current (see table of SPICE parameters) T = temperature, K n = ideality factor (see table of SPICE parameters) P T (XTI) M Absolute Maximum Ratings, T C = +25 C, Single Diode Symbol Parameter Unit Absolute Maximum [] SOT-2/4 SOT-2 P IV Peak Inverse Voltage V T J Junction Temperature C T STG Storage Temperature C -65 to to 50 T OP Operating Temperature C -65 to to 50? jc Thermal Resistance [2] C/W Notes:. Operation in excess of any one of these conditions may result in permanent damage to the device 2. T C = +25 C, where T C is defined to be the temperature at the package pins where contact is made to the circuit board. ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
4 Typical Parameters, Single Diode I F FORWARD CURRENT (ma) VOLTAGE OUT (mv) R L = 00 KO 95 MHz DIODES TESTED IN FIXED-TUNED FR4 MICROSTRIP CIRCUITS V F - FORWARD VOLTAGE (V) Graph : Typical Forward Current vs. Forward Voltage POWER IN (dbm) Graph 2: +25 C Output Voltage vs. Input Power at Zero Bias VOLTAGE OUT (mv) 0 0 R L = 00 KO POWER IN (dbm) 95 MHz DIODES TESTED IN FIXED-TUNED FR4 MICROSTRIP CIRCUITS Graph : +25 C Expanded Output Voltage vs. Input Power. See Figure 2. OUTPUT VOLTAGE (mv) FREQUENCY = 2.45 GHz P IN = -40 dbm R L = 00 KO.. MEASUREMENTS MADE USING A FR4 MICROSTRIP CIRCUIT TEMPERATURE ( C) Graph 4: +25 C Output Voltage vs. Temperature.
5 Outline 2 (SOT-2) Package Dimensions.02 (0.040) 0.89 (0.05) 0.54 (0.02) 0.7 (0.05).40 (0.055).20 (0.047) 2.65 (0.04) 2.0 (0.08) 0.50 (0.024) 0.45 (0.08) 2.04 (0.080).78 (0.070) TOP VIEW 0.0(0.0005).06 (0.20) 2.80 (0.0).02 (0.04) 0.85 (0.0) 0.52 (0.006) (0.00) SIDE VIEW END VIEW 0.69 (0.027) 0.45 (0.08) DIMENSIONS ARE IN MILLIMETERS (INCHES) Outline 4 (SOT-4) 0.92 (0.06) 0.78 (0.0).40 (0.055).20 (0.047) 2.65 (0.04) 2.0 (0.08) 0.60 (0.024) 0.45 (0.08) 0.54 (0.02) 0.7 (0.05) 2.04 (0.080).78 (0.070).06 (0.20) 2.80 (0.0) 0.5 (0.006) 0.09 (0.00) 0.0 (0.0005).04 (0.04) 0.86 (0.0) 0.69 (0.027) 0.45 (0.08)
6 Outline SOT-2 (SC-70).0 (0.05) REF (0.079).5 (0.05).5 (0.045).80 (0.079) (0.025) (0.07) TYP (0.00).00 (0.09) 0.80 (0.0) 0.0 REF 0.25 (0.00) 0.0 (0.006) (0.02) 0.20 (0.008) DIMENSIONS ARE IN MILLIMETERS (INCHES) Outline SOT-6 (SC70, 6 Lead).0 (0.05) REF (0.079).5 (0.05).5 (0.045).80 (0.079) (0.025) (0.07) TYP (0.00).00 (0.09) 0.80 (0.0) 0.0 REF 0.25 (0.00) 0.0 (0.006) (0.02) 0.20 (0.008)
7 Cross Reference Guide CALMOS PART NUMBER CMS8250 CMS825 CMS8252 CMS825 CMS8254 CMS8255 CMS8256 AGILENT PART NUMBER HSMS2850 HSMS285B HSMS2852 HSMS285C HSMS285P HSMS2855 HSMS285L Part Number Ordering Information PART NUMBER CMS-825X-TR2 CMS-825X-TR CMS-825X-BLK NO. OF DEVICES 0, CONTAINER Reel 7 Reel Antistatic bag Revised 05/28/0 Data subject to change Copyright 2002 Calmos Technology, Inc.
SOT-23/SOT-143 Package Lead Code Identification (top view) SINGLE 3 SERIES UNCONNECTED PAIR. SOT-323 Package Lead Code Identification (top view)
Surface Mount Zero Bias Schottky Detector Diodes Technical Data HSMS-2850 Series Features Surface Mount SOT-2/ SOT-14 Packages Miniature SOT-2 and SOT-6 Packages High Detection Sensitivity: up to 50 mv/µw
Data Sheet. HSMS-282Y RF Schottky Barrier Diodes In Surface Mount SOD-523 Package. Features. Description. Package Marking and Pin Connections
HSMS-282Y RF Schottky Barrier Diodes In Surface Mount SOD-523 Package Data Sheet Description The HSMS-282Y of Avago Technologies is a RF Schottky Barrier Diode, featuring low series resistance, low forward
Pin Connections and Package Marking. GUx
Surface Mount RF PIN Switch Diodes Technical Data HSMP-389x Series HSMP-89x Series Features Unique Configurations in Surface Mount Packages Add Flexibility Save Board Space Reduce Cost Switching Low Capacitance
Surface Mount RF PIN Low Distortion Attenuator Diodes. Technical Data. HSMP-381x Series and HSMP-481x Series. Features
Surface Mount RF PIN Low Distortion Attenuator Diodes Technical Data HSMP-81x Series and HSMP-481x Series Features Diodes Optimized for: Low Distortion Attenuating Microwave Frequency Operation Surface
Surface Mount RF PIN Diodes. Technical Data. HSMP-383x Series. Features. Package Lead Code Identification (Top View)
Surface Mount RF PIN Diodes Technical Data HSMP-383x Series Features Diodes Optimized for: Low Capacitance Switching Low Current Attenuator Surface Mount SOT-23 Package Single and Dual Versions Tape and
Package Lead Code Identification (Top View) SINGLE 3 SERIES 3 0, B 2, C
High Performance Schottky Diode for Transient Suppression Technical Data HBAT-5400/-5402 HBAT-540B/-540C Features Ultra-low Series Resistance for Higher Current Handling Low Capacitance Low Series Resistance
Package Lead Code Identification (Top View) SINGLE SERIES B COMMON ANODE C COMMON CATHODE
Surface Mount Microwave Schottky Detector Diodes in SOT-323 (SC-7) Technical Data HSMS-285A Series HSMS-286A Series Features Surface Mount SOT-323 Package High Detection Sensitivity: Up to 5 mv/µw at 95
SERIES 3 RING QUAD. Package Lead Code Identification, SOT-323 (Top View) SINGLE SERIES COMMON ANODE COMMON CATHODE
Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-282x Series Features Low Turn-On Voltage (As Low as 0.34 V at ma) Low FIT (Failure in Time) Rate* Six-sigma Quality Level Single, Dual and Quad
HMPP-386x Series MiniPak Surface Mount RF PIN Diodes
HMPP-86x Series MiniPak Surface Mount RF PIN Diodes Data Sheet Description/Applications These ultra-miniature products represent the blending of Avago Technologies proven semiconductor and the latest in
Surface Mount PIN Diodes. Technical Data. HSMP-38XX and HSMP-48XX Series. Package Lead Code Identification. Features
Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency
MA4E2054 Series. Surface Mount Low Barrier Schottky Diode. Features. Description and Applications. Rev. V9 SOT-23 (287) SOT-143 (1068)
Features Low I R (
Data Sheet. BTx. HSMP-3866 Quad PIN Diode Pi Attenuator 300 khz to 3 GHz in SOT 25 Package. Description. Features. Specification At 1 GHz, V+=1.
HSMP-3866 Quad PIN Diode Pi Attenuator 300 khz to 3 GHz in SOT 25 Package Data Sheet Description Avago Technology s HSMP-3866 is a wideband, low insertion loss, low current, Quad PIN Diode Pi Attenuator
MGA Low Noise Amplifier. Data Sheet. 42x. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic
MGA-243 Low Noise Amplifier Data Sheet Description Avago Technologies MGA-243 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for use in LNA and driver stages. While
MGA Low Noise Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic
MGA-243 Low Noise Amplifier Data Sheet Description Avago Technologies MGA-243 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for use in LNA and driver stages. While
PIN and Schottky Diode. Selection Guide
and Diode Selection Guide Introduction Avago Technologies Inc., a leading provider of innovative technologies for communications and life sciences, has the broadest product offering of surface mount and
Constant Voltage and Constant Current Controller. Features
09/06/2011 Constant Voltage and Constant Current Controller Rev. P1 General Description Features The is built-in with a high-accuracy 1.2V voltage reference, two op-amps and a low-side current sensing
Agilent HSMP-389x & HSMP-489x Series Surface Mount RF PIN Switch Diodes Data Sheet
Agilent HSMP-389x & HSMP-89x Series Surface Mount RF PIN Switch Diodes Data Sheet Features Description The HSMP-389x series is optimized for switching applications where low resistance at low current and
Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND 1 4 V CC
GHz Low Noise Silicon MMIC Amplifier Technical Data INA-63 Features Ultra-Miniature Package Internally Biased, Single 5 V Supply (12 ma) db Gain 3 db NF Unconditionally Stable Applications Amplifier for
SMS : Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode
DATA SHEET SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode Applications Sensitive RF and microwave detector circuits Sampling and mixer circuits High volume wireless systems
Data Sheet. 3Tx. ADA-4743 Silicon Bipolar Darlington Amplifier. Description
ADA-7 Silicon Bipolar Darlington Amplifier Data Sheet Description Avago Technologies ADA-7 is an economical, easy-touse, general purpose silicon bipolar RFIC gain block amplifiers housed in a -lead SC-7
Data Sheet. 2Tx. ADA-4643 Silicon Bipolar Darlington Amplifier. Description. Features. Specifications. Applications. Surface Mount Package
ADA- Silicon Bipolar Darlington Amplifier Data Sheet Description Avago Technologies ADA- is an economical, easy-touse, general purpose silicon bipolar RFIC gain block amplifiers housed in a -lead SC-7
Data Sheet. MGA-565P8 20 dbm P sat. High Isolation Buffer Amplifier. 1Bx. Features. Description. Specifications. Applications. Simplified Schematic
MGA-6P8 dbm P sat High Isolation Buffer Amplifier Data Sheet Description The MGA-6P8 is designed for use in LO chains to drive high dynamic range passive mixers. It provides high isolation, high gain,
ADA-4543 Silicon Bipolar Darlington Amplifier. Data Sheet. 1Tx
ADA- Silicon Bipolar Darlington Amplifier Data Sheet Description Avago Technologies ADA- is an economical, easy-to-use, general purpose silicon bipolar RFIC gain block amplifiers housed in a -lead SC-7
Cascadable Silicon Bipolar MMIC Amplifier. Technical Data MSA-0686
Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-686 Features Cascadable Ω Gain Block Low Operating Voltage:. V Typical V d db Bandwidth: DC to.8 GHz High Gain: 8. db Typical at. GHz Low Noise
CDC7630/7631 and DDC2353/2354 Series: Zero Bias Silicon Schottky Barrier Detector Diodes in Hermetic Ceramic Packages
DATA SHEET CDC7630/7631 and DDC2353/2354 Series: Zero Bias Silicon Schottky Barrier Detector Diodes in Hermetic Ceramic Packages Applications Microwave integrated circuits Detectors Features High sensitivity
Surface Mount Mixer and Detector Schottky Diodes
DATA SHEET Surface Mount Mixer and Detector Schottky Diodes Applications Sensitive RF and microwave detector circuits Sampling and mixer circuits High-volume wireless WiFi and mobile Low-noise receivers
SMS : Surface Mount, 0201 Low-Barrier Silicon Schottky Diode
DATA SHEET SMS7621-060: Surface Mount, 0201 Low-Barrier Silicon Schottky Diode Applications Sensitive detector circuits Sampling circuits Mixer circuits Features Low barrier height Suitable for use above
MGA Current Adjustable Low Noise Amplifier
Products > RF ICs/Discretes > RF ICs > GaAs Amplifiers, Mixers, Switches > MGA-68563 MGA-68563 Current Adjustable Low Noise Amplifier Description The MGA-68563 is an easy to use, economical GaAs MMIC amplifier
Data Sheet. MGA Current-Adjustable, Low Noise Amplifier. Description. Features. Specifications at 500 MHz; 3V, 10 ma (Typ.
MGA-5 Current-Adjustable, Low Noise Amplifier Data Sheet Description Avago Technologies MGA-5 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent linearity and low noise figure for
Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking 4 V CC. Note: Package marking provides orientation and identification.
1.5 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-52063 Features Ultra-Miniature Package Single 5 V Supply (30 ma) 22 db Gain 8 dbm P 1dB Unconditionally Stable Applications Amplifier for Cellular,
BAS70 Series. Low capacitance, low series inductance and resistance Schottky diodes. Main product characteristics. Features and benefits.
Low capacitance, low series inductance and resistance Schottky diodes Main product characteristics I F 70 ma V RRM 70 V SOD-123 BAS70ZFILM C (max) T j (max) 2 pf 150 C BAS70JFILM Features and benefits
N50. 1 GHz Low Noise Silicon MMIC Amplifier. Technical Data INA SOT-143 Surface Mount Package
GHz Low Noise Silicon MMIC Amplifier Technical Data INA- Features Internally Biased, Single V Supply (7 ma) 9 db Gain.6 db NF Unconditionally Stable Applications Amplifier for Cellular, Cordless, Special
Surface Mount Schottky Quad Mixer Diodes
DATA SHEET Surface Mount Schottky Quad Mixer Diodes Applications High-volume commercial systems Modulators and frequency multipliers Double balanced mixers Features Tight parameter distribution Available
Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND. V dd. Note: Package marking provides orientation and identification.
GHz V Low Current GaAs MMIC LNA Technical Data MGA-876 Features Ultra-Miniature Package.6 db Min. Noise Figure at. GHz. db Gain at. GHz Single + V or V Supply,. ma Current Applications LNA or Gain Stage
87x. MGA GHz 3 V Low Current GaAs MMIC LNA. Data Sheet
MGA-876 GHz V Low Current GaAs MMIC LNA Data Sheet Description Avago s MGA-876 is an economical, easy-to-use GaAs MMIC amplifier that offers low noise and excellent gain for applications from to GHz. Packaged
8Fx. Data Sheet ATF Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package. Description. Features.
ATF-58143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago Technologies ATF-58143 is a high dynamic range, low noise E-PHEMT housed in a 4-lead
S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6
Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.
0.1 6 GHz 3V, 17 dbm Amplifier. Technical Data MGA-82563
.1 6 GHz 3V, 17 dbm Amplifier Technical Data MGA-8563 Features +17.3 dbm P 1 db at. GHz + dbm P sat at. GHz Single +3V Supply. db Noise Figure at. GHz 13. db Gain at. GHz Ultra-miniature Package Unconditionally
Data Sheet. HSMP-383x Surface Mount RF PIN Diodes. Description/Applications. Features. Package Lead Code Identification (Top View)
HSMP-383x Surface Mount RF PIN Diodes Data Sheet Description/Applications The HSMP-383x series of general purpose PIN diodes are designed for two classes of applications. The first is attenuators where
Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.
![Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.](/thumbs/84/89103363.jpg "Data Sheet ATF-511P8. High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package. 1Px. Features.")
ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package Data Sheet Description Avago Technologies s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT
LM2904AH. Low-power, dual operational amplifier. Related products. Description. Features. See LM2904WH for enhanced ESD performances
LM2904AH Low-power, dual operational amplifier Datasheet - production data Related products See LM2904WH for enhanced ESD performances Features Frequency compensation implemented internally Large DC voltage
Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking GND 1 5 GND. Note: Package marking provides orientation and identification.
.1 6 GHz 3 V, 1 dbm Amplifier Technical Data MGA-81563 Features +1.8 dbm P 1dB at. GHz +17 dbm P sat at. GHz Single +3V Supply.8 db Noise Figure at. GHz 1. db Gain at. GHz Ultra-miniature Package Unconditionally
MGA GHz 3 V, 17 dbm Amplifier. Data Sheet
MGA-853.1 GHz 3 V, 17 dbm Amplifier Data Sheet Description Avago s MGA-853 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to
Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1
AVT-53663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-53663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
Data Sheet 0GX. ATF Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package. Features. Description. Specifications
![Data Sheet 0GX. ATF Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package. Features. Description. Specifications](/thumbs/84/90611572.jpg "Data Sheet 0GX. ATF Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package. Features. Description. Specifications")
ATF-5189 Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies s ATF-5189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface
High Power PIN Diodes
Applications Series/shunt elements in high power HF/VHF/ UHF transmit/receive (T/R) switches Features Very low thermal resistance for excellent power handling: 40 W C/W typical Low series resistance SMP1324-087LF:
SMSA : Surface Mount, 0201 Low-Barrier Silicon Schottky Diode
DATA SHEET SMSA7621-060: Surface Mount, 0201 Low-Barrier Silicon Schottky Diode Automotive Applications 24 GHz and 77 GHz collision avoidance 2.4 GHz and 5.8 GHz WiFi detector Infotainment Navigation Garage
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage
Matched Monolithic Quad Transistor MAT04
a FEATURES Low Offset Voltage: 200 V max High Current Gain: 400 min Excellent Current Gain Match: 2% max Low Noise Voltage at 100 Hz, 1 ma: 2.5 nv/ Hz max Excellent Log Conformance: rbe = 0.6 max Matching
Micropower Precision CMOS Operational Amplifier AD8500
Micropower Precision CMOS Operational Amplifier AD85 FEATURES Supply current: μa maximum Offset voltage: mv maximum Single-supply or dual-supply operation Rail-to-rail input and output No phase reversal
Surface Mount Microwave Schottky Mixer Diodes. Technical Data. HSMS-8101 Single HSMS-8202 Series Pair HSMS-8207 Ring Quad HSMS-8209 Crossover Quad
Surface Mount Microwave Schottky Mixer iodes Technical ata HSMS-80 Single HSMS-8202 Series air HSMS-8207 Ring Quad HSMS-8209 Crossover Quad eatures Optimized for use at 0-4 GHz Low Capacitance Low Conversion
LD /03/2017. Constant Voltage and Constant Current Controller. Features. General Description. Applications. Typical Application REV.
Constant Voltage and Constant Current Controller REV. 00 General Description The is built-in with a high-accuracy 1.212V reference voltage, two op-amps and a low-side current sensing circuit in a SOT-26
Distributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. Agilent N57, N572, 82-23 Series, 82-28 Series, 82-29 Schottky Barrier Diodes
MGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic
MGA-853.1 GHz 3 V, 17 dbm Amplifier Data Sheet Description Avago s MGA-853 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to
MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
BAT30. Small signal Schottky diodes. Description. Features
Small signal Schottky diodes Description Datasheet - production data The BAT30 series uses 30 V Schottky barrier diodes encapsulated in SOD-523 or SOT-323 packages. This device is specially suited for
Data Sheet. ALM GHz 3.9GHz 2 Watt High Linearity Amplifier. Description. Features. Component Image. Specifications WWYY XXXX
ALM-32320 3.3GHz 3.9GHz 2 Watt High Linearity Amplifier Data Sheet Description Avago Technologies ALM-32320 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain
Up to 6 GHz Medium Power Silicon Bipolar Transistor. Technical Data AT Plastic Package
Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-286 Features High Output Power: 2.5 dbm Typical P 1 db at 2. GHz High Gain at 1 db Compression: 13.5 db Typical G 1 db at 2. GHz Low
Features. Specifications. Applications
ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package Data Sheet Description Avago Technologies ATF 531P8 is a single-voltage high linearity, low noise E phemt housed
Features. Specifications. Applications. Vcc
AVT-55689 50 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-55689 is an economical, easy-touse, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
SERIES DET GENERAL PURPOSE DETECTORS DESCRIPTION. Millimeter-Wave Technology & Solutions
GENERAL PURPOSE DETECTORS FEATURES: Full waveguide bandwidth High sensitivity No tuning required Zero bias APPLIC ATIONS: Instrumentation Power monitoring DESCRIPTION Millitech series DET detectors, utilizing
Agilent 4N35 Phototransistor Optocoupler General Purpose Type
Agilent N3 Phototransistor Optocoupler General Purpose Type Data Sheet Description The N3 is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a phototransistor.
SMS : Surface Mount, 0201 Low-Barrier Silicon Schottky Diode
DATA SHEET SMS7621-060: Surface Mount, 0201 Low-Barrier Silicon Schottky Diode Applications Sensitive detector circuits Sampling circuits Mixer circuits Features Low barrier height Suitable for use above
TP5551/TP5552 / TP5554
Features Low Offset Voltage: 5 μv (Max) Zero Drift:.5 µv/ C (Max) 1/f Noise Corner Down to.1hz: - - 15 nv/ Hz Input Noise Voltage @1kHz 35 nv P-P Noise Voltage @.1Hz to 1Hz Slew Rate: 2.5 V/μs Bandwidth:
Surface Mount Package SOT-363/SC70. Pin Connections and Package Marking. AHx
Agilent ABA-5153 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Description Agilent s ABA-5153 is an economical, easy-to-use, internally 5-ohm matched silicon monolithic broadband amplifier that offers
Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking. OUTPUT and V d 5 GND 4 V CC
3. GHz Low Noise Silicon MMIC Amplifier Technical Data INA-5463 Features Ultra-Miniature Package Single 5 V Supply (29 ma) 21.5 db Gain (1.9 GHz) 8. dbm P 1dB (1.9 GHz) Positive Gain Slope Unconditionally
150 μv Maximum Offset Voltage Op Amp OP07D
5 μv Maximum Offset Voltage Op Amp OP7D FEATURES Low offset voltage: 5 µv max Input offset drift:.5 µv/ C max Low noise:.25 μv p-p High gain CMRR and PSRR: 5 db min Low supply current:. ma Wide supply
Data Sheet. ALM GHz 1.0GHz 2 Watt High Linearity Amplifier. Description. Features. Specifications. Component Image.
ALM-32120 0.7GHz 1.0GHz 2 Watt High Linearity Amplifier Data Sheet Description Avago Technologies ALM-32120 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain
GHz Upconverter/Amplifier. Technical Data HPMX 2006 YYWW HPMX 2006 YYWW HPMX-2006
.8 2.5 GHz Upconverter/Amplifier Technical Data HPMX-26 Features Wide Band Operation RF Output: 8-25 MHz IF Input: DC- 9 MHz 2.7-5.5 V Operation Mixer + Amplifier: 38 ma Mixer only: 15 ma Standby Mode:
LNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.
Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected
Also Offering RoHs Compliant Equivalent Parts. Surface Mount Plastic PIN Diodes. SMPP Series V13. Features. Description and Applications
Features Industry Packages Lead-Free () Equivalents Available with 260 C Reflow Compatibility Low Loss, High Isolation Switching Diodes Low Distortion Attenuator Diodes Single and Dual Diode Configurations
Low Noise, Matched Dual PNP Transistor MAT03
a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 V Max Low Noise: 1 nv/ Hz @ 1 khz Max High Gain: 100 Min High Gain Bandwidth: 190 MHz Typ Tight Gain Matching: 3% Max Excellent Logarithmic
GUx. Data Sheet. HSMP-389x Series, HSMP-489x Series Surface Mount RF PIN Switch Diodes. Features. Description/Applications
HSMP-89x Series, HSMP-89x Series Surface Mount R PIN Switch Diodes Data Sheet Description/Applications The HSMP-89x series is optimized for switching applications where low resistance at low current and
MAAP STD Power Amplifier, 2 W GHz Rev. V2 Features Functional Schematic Description Pin Configuration2 Ordering Information1
Features 24 db Small Signal Gain 41 dbm Third Order Intercept Point (OIP3) >2 W Output P1dB 35 dbm Saturated Output Power Integrated Power Detector Bias 1330 ma @ 6 V Lead-Free 7 mm Cavity Package RoHS*
AD864/AD8642/AD8643 TABLE OF CONTENTS Specifications... 3 Electrical Characteristics... 3 Absolute Maximum Ratings... 5 ESD Caution... 5 Typical Perfo
FEATURES Low supply current: 25 µa max Very low input bias current: pa max Low offset voltage: 75 µv max Single-supply operation: 5 V to 26 V Dual-supply operation: ±2.5 V to ±3 V Rail-to-rail output Unity-gain
Data Sheet. MGA GHz 3 V, 14 dbm Amplifier. Description. Features. Applications. Simplified Schematic
MGA-8153.1 GHz 3 V, 1 dbm Amplifier Data Sheet Description Avago s MGA-8153 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to
Keysight TC231P 0-20 GHz Integrated Diode Limiter
Keysight TC231P 0-20 GHz Integrated Diode Limiter 1GC1-8235 Data Sheet Features Two Independent Limiters for Single ended or Differential Signals Can be Biased for Adjustable Limit Level and Signal Detection
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM392 Low Power Operational Amplifier/Voltage Comparator General Description
4 GHz to 18 GHz Divide-by-8 Prescaler ADF5002
4 GHz to 18 GHz Divide-by-8 Prescaler ADF5002 FEATURES Divide-by-8 prescaler High frequency operation: 4 GHz to 18 GHz Integrated RF decoupling capacitors Low power consumption Active mode: 30 ma Power-down
Data Sheet. MGA Dual LNA for Balanced Application MHz. Features. Description. Typical Performances. Component Image.
MGA-16116 Dual LNA for Balanced Application 450 1450 MHz Data Sheet Description Avago Technologies MGA-16116 is an ultra low-noise high linearity amplifier pair with built-in active bias and shutdown features
Obsolete Product(s) - Obsolete Product(s)
Low power quad operational amplifier Features Wide gain bandwidth: 1.3 MHz Extended temperature range: -40 C to +150 C Input common-mode voltage range includes negative rail Large voltage gain: 100 db
WPM2006 Power MOSFET and Schottky Diode
WPM6 WPM6 Power MOSFET and Schottky Diode Features Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low V F Schottky DFN* -6L Applications Li--Ion Battery
ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking BAT15-02EL BAT15-02ELS
BAT5... Silicon Schottky Diodes Low barrier type for DBS mixer applications up to GHz, phase detectors and modulators Low noise figure Pb-free (RoHS compliant) package BAT5-EL BAT5-ELS BAT5-W BAT5-4W BAT5-5W
CPC3902CTR. 250V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION. Description
250V N-Channel Depletion-Mode FET BV DSX / R DS(on) I DSS (min) Package BV DGX (max) 250V 2.5 400mA SOT-89, SOT-223 Features High Breakdown Voltage: 250V On-Resistance: 2.5 max. at 25ºC Low (off) Voltage:
Features. = +25 C, 50 Ohm System, Vcc= 5V
Typical Applications Prescaler for 1 MHz to 13 GHz PLL Applications: Point-to-Point / Multi-Point Radios VSAT Radios Fiber Optic Test Equipment Space & Military Functional Diagram Features Ultra Low ssb
Dual/Quad Low Power, High Speed JFET Operational Amplifiers OP282/OP482
Dual/Quad Low Power, High Speed JFET Operational Amplifiers OP22/OP42 FEATURES High slew rate: 9 V/µs Wide bandwidth: 4 MHz Low supply current: 2 µa/amplifier max Low offset voltage: 3 mv max Low bias
Self-Contained Audio Preamplifier SSM2019
a FEATURES Excellent Noise Performance:. nv/ Hz or.5 db Noise Figure Ultra-low THD:
30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
LM392/LM2924 Low Power Operational Amplifier/Voltage Comparator
LM392/LM2924 Low Power Operational Amplifier/Voltage Comparator General Description The LM392 series consists of 2 independent building block circuits. One is a high gain, internally frequency compensated
Low Power, Rail-to-Rail Output, Precision JFET Amplifiers AD8641/AD8642/AD8643
Data Sheet Low Power, Rail-to-Rail Output, Precision JFET Amplifiers AD864/AD8642/AD8643 FEATURES Low supply current: 25 μa max Very low input bias current: pa max Low offset voltage: 75 μv max Single-supply
PLx. Data Sheet. HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes. Description. Features. Pin Connections and Package Marking
HSMS-286x Series Surface Mount Microwave Schottky etector iodes ata Sheet escription Avago s HSMS 286x family of C biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz.
ESD5651N ESD5651N. Descriptions. Features. Applications. Order information. Pin1. Pin2. 4.5V, Single Li-ion Battery Port Surge Protector
4.5V, Single Li-ion Battery Port Surge Protector http//:www.sh-willsemi.com Descriptions The is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic
STBR3012-Y. Automotive high voltage rectifier for bridge applications. Datasheet. Features. Applications. Description
Datasheet Automotive high voltage rectifier for bridge applications Features A1 K K AEC-Q101 qualified Ultra low conduction losses K DO-247 A A A NC D²PAK HV Ultra-low reverse losses High junction temperature
WL2803E WL2803E. Descriptions. Features. Order Information. Applications. Ultra low dropout, 500mA, CMOS LDO.
Ultra low dropout, 500mA, CMOS LDO Http://www.sh-willsemi.com Descriptions The series are ultra low dropout, Low quiescent current, high PSRR CMOS LDO. The dropout voltage is 130mV (Typ.) at 500mA load
UNISONIC TECHNOLOGIES CO., LTD LM321
UNISONIC TECHNOLOGIES CO., LTD LM321 LOW POWER SINGLE OP AMP DESCRIPTION The UTC LM321 s quiescent current is only 430µA (5V). The UTC LM321 brings performance and economy to low power systems, With a
1 MHz to 2.7 GHz RF Gain Block AD8354
1 MHz to 2.7 GHz RF Gain Block AD834 FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply
STPS3H V power Schottky rectifier. Datasheet. Features. Applications. Description
Datasheet 100 V power Schottky rectifier K K SMB A A Features Negligible switching losses High junction temperature capability Low leakage current Good trade-off between leakage current and forward voltage
Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications Detectors Mixers Features Available in both P-type and N-type low barrier designs Low 1/f noise Large bond pad chip
4 GHz to 18 GHz Divide-by-4 Prescaler ADF5001
4 GHz to 18 GHz Divide-by-4 Prescaler ADF5001 FEATURES Divide-by-4 prescaler High frequency operation: 4 GHz to 18 GHz Integrated RF decoupling capacitors Low power consumption Active mode: 30 ma Power-down
Features. Specifications
MGA-31189 0.25W High Gain Driver Amplifier 50 2000 MHz Data Sheet Description Avago Technologies MGA-31189 is a 0.25W high gain with good gain flatness Driver Amplifier MMIC, housed in a standard SOT-89