CPC3902CTR. 250V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION. Description

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1 250V N-Channel Depletion-Mode FET BV DSX / R DS(on) I DSS (min) Package BV DGX (max) 250V mA SOT-89, SOT-223 Features High Breakdown Voltage: 250V On-Resistance: 2.5 max. at 25ºC Low (off) Voltage: -.4 to -3.V High Input Impedance Small Package Sizes: SOT-89, SOT-223 Applications Current Regulator Normally-On Switches Solid State Relays Converters Telecommunications Power Supply Package Pinout D G D S Description The is a 250V, N-channel, depletion-mode, metal oxide semiconductor field effect transistor (MOSFET) built upon a proprietary third generation vertical DMOS process that realizes world-class, high voltage performance in an economical silicon gate process. This vertical DMOS process yields a robust device with high input impedance for power applications. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown, which makes the ideal for use in high-power applications. The is a highly reliable FET device that has been used extensively in IXYS Integrated Circuits Division s Solid State Relays for industrial and telecommunications applications. The is available in the SOT-89 and the SOT-223 package. Ordering Information Part # ZTR CTR Circuit Symbol Description SOT-223: Tape and Reel (000/Reel) SOT-89: Tape and Reel (000/Reel) D G S DS--

2 Absolute Maximum 25ºC Parameter Ratings Units Drain-to-Source Voltage 250 V Gate-to-Source Voltage ±5 V Pulsed Drain Current 400 ma Total Package Dissipation.8 W Operational Temperature -55 to +0 ºC Junction Temperature, Maximum +25 ºC Storage Temperature -55 to +25 ºC Mounted on "x" 2 oz. Copper FR4 board. Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Typical values are characteristic of the device at +25 C, and are the result of engineering evaluations. They are provided for information purposes only, and are not part of the manufacturing testing requirements. Thermal Characteristics Device Parameter Symbol Rating Units C (SOT-89) Junction to Case JC 50 Junction to Ambient JA 90 Z (SOT-223) Junction to Case JC 4 ºC/W Junction to Ambient JA 55 Electrical 25ºC (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage BV DSX = -5.5V, I D =00µA V Gate-to-Source Off Voltage (off) V DS = 5V, I D = A V Change in (off) with Temperature d(off) /dt V DS = 5V, I D = A mv/ºc Gate Body Leakage Current I GSS =±5V, V DS =0V na Drain-to-Source Leakage Current I D(off) = -5.5V, V DS =250V - - µa Saturated Drain-to-Source Current I DSS = 0V, V DS =5V ma Static Drain-to-Source On-State Resistance R DS(on) = 0V, I D =300mA, V DS =0V Change in R DS(on) with Temperature dr DS(on) /dt %/ºC Forward Transconductance G fs I D = 200mA, V DS = 0V m Input Capacitance C ISS = -3.5V 230 Common Source Output Capacitance C OSS V DS = 20V - 6 Reverse Transfer Capacitance C RSS f= MHz pf Source-Drain Diode Voltage Drop V SD = -5V, I SD =50mA V 2

3 PERFORMANCE 25ºC (Unless Otherwise Noted)* I D (ma) Instantaneous Transfer Characteristics (V DS =0V) T A = 05ºC T A = 25ºC T A = -40ºC (V) (V) Threshold Voltage (I DS = A) G m (S) Transconductance vs. Drain Current (V DS =0V) T A =-40ºC T A =25ºC T A =05ºC I D (ma) Current (A) 0. Forward Safe Operating Bias ( =0V, DC Load) Limited by device R ON Limited by channel saturation Voltage (V) I D (A) =0V =-0.5V =-V =-.5V =-2V Output Characteristics V DS (V) On-Resistance ( ) On-Resistance vs. Temperature ( =0V, I D =300mA) Capacitance (pf) Capacitance vs. Drain-Source Voltage ( =-3.5V) CISS COSS CRSS V DS (V) On-Resistance ( ) On-Resistance vs. Drain Current ( =0V) T A =05ºC T A =25ºC T A =-40ºC I D (ma) Blocking Voltage (V P ) Blocking Voltage ( =-5V, I L =0 A) Leakage Current ( A) Leakage Current vs. Temperature ( =-5V, V DS =250V) *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. 3

4 Manufacturing Information Moisture Sensitivity All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033. Device Moisture Sensitivity Level (MSL) Rating C, Z MSL ESD Sensitivity This product is ESD Sensitive, and should be handled according to the industry standard JESD-625. Soldering Profile This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020 must be observed. Board Wash Device Maximum Temperature x Time Maximum Reflow Cycles C, Z 260ºC for 30 seconds 3 IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used. 4

5 Z 2.90 / 3.0 (0.4 / 0.22) Mechanical / (09 / 3) PCB Land Pattern.90 (75) 3.30 / 3.7 (0.30 / 0.46) / (0.264 / 0.287).499 /.98 (59 / 78) 6.0 (0.24) 3.20 (0.26) 20 / 0.02 (008 / 04) Pin 0.60 / (24 / 3) 6.30 / 6.7 (0.248 / 0.264) /.067 (90) (34 / 42) (0.8).549 /.803 (6 / 7) 0.94 MIN (36 MIN) (90) 0.90 (35).90 (75) mm MIN / mm MAX (inches MIN / inches MAX) ZTR Tape & Reel 77.8 Dia (7.00 Dia) Top Cover Tape Thickness 0.02 Max (04 Max) 5.50 ± 5 (0.27 ± 02) 2.00 ± 5 (79 ± 02) 4.00 ± 0. (0.57 ± 04).75 ± 0. (69 ± 04) W=2.08 ± 0.2 (0.476 ± 08) B 0 =7.42 ± 0. (0.292 ± 04) Embossed Carrier Embossment K 0 =.88 ± 0. (74 ± 04) A 0 =6.83 ± 0. (0.269 ± 04) P=8.03 ± 0. (0.36 ± 04) mm (inches) 5

6 C.626 /.829 (64 / 72) R (R 0).397 /.600 (55 / 63) PCB Land Pattern.90 (75) Pin /.94 (35 / 47) / (0.73 / 0.8) / (4 / 9) / (7 / 22) / (0.55 / 0.67) /.06 (34 / 40) / 2.59 (90 / 0.02) / (4 / 7) / (7 / 20).40 (55) 45º 50º 2.45 (96) 0.60 (24) TYP 3.90 (74) 5.00 (0.97).8 /.270 (44 / 50) 50º / (0.2 / 0.8).422 /.575 (56 / 62) 2.92 / (0.5 / 0.2) mm MIN / mm MAX (inches MIN / inches MAX) CTR Tape & Reel 77.8 Dia (7.00 Dia) Top Cover Tape Thickness 0.02 Max (04 Max) 5.50 ± 5 (0.27 ± 02) 2.00 ± 5 (79 ± 02) 4.00 ± 0. (0.57 ± 04).75 ± 0. (69 ± 04) W=2.00 ± 0.3 (0.472 ± 2) B 0 =4.60 ± 0. (0.8 ± 04) Embossed Carrier Embossment K 0 =.80 ± 0. (7 ± 04) A 0 =4.80 ± 0. (0.89 ± 04) P=8.00 ± 0. (0.35 ± 04) mm (inches) For additional information please visit our website at: IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. 6 Specification: DS-- Copyright 205, IXYS Integrated Circuits Division All rights reserved. Printed in USA. 4/0/205

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