A Single-Phase Current-Source Bidirectional Converter for V2G Applications

Transcription

1 58 Jounal of Powe Electonics, Vol. 1, No. 3, pp , May 1 JPE ISSN(Pint): / ISSN(Online): A Sinle-Phase Cuent-Souce Bidiectional Convete fo VG Applications Hua Han *, Yonlu Liu *, Yao Sun, Hui Wan *, and Mei Su * * Depatment of Infomation Science and Enineein, Cental South Univesity, Chansha, China Abstact In this pape, a sinle-phase cuent-souce bidiectional convete topoloy fo VG applications is poposed. The poposed convete consists of a sinle-phase cuent-souce ectifie (SCSR) and an auxiliay switchin netwok (ASN). It offes bidiectional powe flow between the battey and the id in the buck o boost mode and expands the output voltae ane, so that it can be compatible with diffeent voltae levels. The topoloy stuctue and opeatin pinciples of the poposed convete ae analyzed in detail. An indiect contol aloithm is used to ealize the chain and dischain of the battey. Finally, the semiconducto losses and system efficiency ae analyzed. Simulation and expeimental esults demonstate the validity and effectiveness of the poposed topoloy. Key wods: Battey chae, Bidiectional convete, Cuent ipple, VG I. INTRODUCTION Developin plu-in hybid electic vehicles (PHEV) o electic vehicles (EV) is an effective way to solve the inceasinly seious eney cisis and lobal wamin issues because of thei educed fuel usae and eenhouse emissions [1], []. If the chain device in a PHEV/EV is desined with bidiectional powe tansfe capability, the powe stoed in them can be fed back to the id, which is temed as a vehicle-to-id (VG) system [3], []. This is epoted to be best suited fo electicity balancin makets due to the ability to povide sevices like powe system eulation [5], [6], load balancin by valley fillin [7] and peak shavin [8], [9]. In a VG system, the battey chae plays a citical ole, because the chain time, the quality of the powe and the battey life ae linked to it [1], [11]. A battey chae with a hih powe density, low cost, hih efficiency, and flexibility, has been the main focus of cuent eseach in both industial and academic communities. Nowadays, a two-stae topoloy that voltae-souce ectifie (VSR) cascades a - convete is widely applied in EV/PHEV [1]-[1]. This type of chae offes a two-way electical eney flow and communication. In addition, the quality of the input cuent is impoved by the PWM technique. Manuscipt eceived Oct. 1, 13; accepted Feb. 18, 1 Recommended fo publication by Associate Edito Woo-Jin Choi. Coespondin Autho: yaosuncsu@mail.com Tel: , Fax: , Cental South Univ. * Dept. of Infomation Science &En., Cental South Univesity, China Accodin to the duality between the VSR and the cuent-souce ectifie (CSR), the CSR is suitable fo a battey chae. Howeve, thee ae elatively few studies on thei application to the battey aea. Actually the conventional CSR used as a chae was epoted ealy [15]-[17]. Howeve, the evesed eney flow is allowed. Recently moe and moe studies have been done on cuent-souce convetes (CSC) [18]-[5]. As one type of CSC, the AC/DC matix convete [18], [19] is attactive in VG applications due to its inheent bi-diectional powe flow. Howeve, it needs a lae numbe of semiconducto switches. Theefoe, an AC/DC matix convete topoloy applied as a battey chae with only thee switches has been pesented []. Howeve, the eney stoed in the battey can be inveted to the powe id. A chae based on the CSR and H-bide invete was epoted, whee the H-bide invete woks as an invetin link [1]. It suppots bidiectional eney flow and has fewe switches when compaed with AC/DC matix convetes. Howeve, undesied edundant switches still exits and that may estict the scope of its application. Theefoe, a simplified topoloy which can pefom multiple functions was studied []. Fo educin the switch powe losses and EMI noise, a bidiectional swiss ectifie [3], [] and a bidiectional 3d hamonic injection active filte ectifie [5] wee poposed. Thei common advantae is that the ectifie woks as the fundamental fequency. All the CSCs mentioned above ae thee phase chaes. When a low powe chae is equied, fo example, when chain at home o in an office, a sinle 1 KIPE

2 A Sinle-Phase Cuent-Souce Bidiectional Convete fo VG Application9 phase chae is usually pefeed [1]. Vaious topoloies and schemes based on a diode ectifie o a voltae-souce ectifie have been epoted fo sinle phase chaes [1], [6]-[8]. Howeve, few studies have focused on sinle phase cuent-souce chaes. In [9], a novel inducto voltae contol method was poposed fo a sinle phase CSC to achieve any input powe facto. Othe eseaches focused on the powe decouplin poblem in sinle phase CSCs [3], [31]. Because the CSR is one kind of buck convete, it is compatible with hihe battey voltaes. To ealize a bidiectional powe flow, incease eliability and expand the application ane, a sinle-phase cuent-souce bidiectional convete topoloy is pesented fo VG applications in this pape. Its font-end is a conventional CSR and its ea-end is an ASN composed of two IGBTs and two diodes. The ole of the font-end SCSR is to convet the supply ac voltae into an intemediate link voltae and to ealize PFC. The ASN is desined to contol the diection of the powe flow (chain o dischain). In addition, it woks in a PWM manne to help in boostin the output voltae, which eatly expands its application ane. Compaed with the bidiectional buck-boost convete mentioned in [3], the poposed topoloy has fewe components, a wide output voltae ane and bette quality in the input cuent. A sinle-phase full bide bidiectional boost convete cascaded by a DC/DC convete is a commonly used topoloy in VG applications. Howeve, it needs lae electolytic capacitos when compaed with the poposed topoloy, which will limit the lifespan of the convete. In addition, it has the possibility of shoot-thouh faults due to the natue of the voltae-souce convete. Theefoe, the poposed convete has a hihe eliability. This pape s main objective is to pesent the pinciples of chain and dischain with buck-boost modes and to veify the feasibility of the poposed topoloy, modulation scheme and contol aloithm. This pape is oanized as follows: Section II intoduces the topoloy, the opeation modes and the aveaed switchin modelin of the poposed convete. Section III pesents the modulation scheme and the contol aloithm. Section IV analyzes the semiconducto losses. Section V shows simulation and expeimental esults to validate the capabilities of the poposed convete. Finally, the main points of this pape ae summaized in Section VI. A. Topoloy II. TOPOLOGY AND MODELING The topoloy of the poposed sinle-phase cuent-souce bidiectional convete is shown in Fi. 1. It consists of an LC input filte, a conventional SCSR and an ASN. Fo the evese voltae blockin capability, each IGBT in the SCSR is connected with a diode in seies. Unde nomal opeation switches S 1 and S 3 ae complementay; the same estiction is SCSR i D1 D3 s1 s3 i u c D D s s L u D 5 D 6 Fi. 1. Topoloy of the poposed powe convete. applied to S and S. The ASN includes two IGBTs, two diodes, an inducto L and a capacito C o, which is the key pat of the system. Its main function is to chane the diection of the powe flow and convete voltae. B. Opeatin Modes of the Poposed Topoloy Accodin to the chaacteistics of the CSR, the cuent can be evesed. Howeve, by contollin the ASN, the diection of the cuent flowin thouh the battey can be chaned to achieve chain and dischain functionalities. Fi. depicts the fou opeatin modes of the ASN, whee the CSR is epesented by a contolled voltae souce d u c. d is the diffeence between the steady state duty atios of switches S 1 and S. The ed lines illustate the cuent paths. Unde the chain opeation, and ae the input and output voltaes, espectively, and the opeatin modes altenate between mode I and mode II. In mode I, switches S 5 and S 6 ae in the off state, diodes D 5 and D 6 ae fowad-biased and the battey absobs eney. In mode II, switch S 5 is in the on state and a coespondin diode D 6 is fowad-biased, which disconnects the battey fom the cicuit. The ASN woks as a boost cicuit and the system is a buck-boost convete. Theefoe, the scope of its application is expanded when compaed to the conventional SCSR. Unde the dischain opeation, and ae the input and output voltaes, espectively, and the opeatin modes altenate between mode Ⅲ and mode Ⅳ. In mode Ⅲ, switches S 5 and S 6 ae in the on state, diodes D 5 and D 6 ae evese-biased and the battey supplies eney. Mode Ⅳ plays the ole of feewheelin. The ASN woks as a buck cicuit and the system is still a buck-boost convete. C. Aveaed Switchin Model By eplacin the convete switches with contolled voltae and cuent souces, the aveaed switchin model, as shown in Fi. 3, can be deived fom Fi.1. Accodin to Fi. 3, the state space aveae model fo the poposed convete is fomulated as follows: Battey

3 6 Jounal of Powe Electonics, Vol. 1, No. 3, May 1 i L D 5 u c di d u dbub c i d battey ub d u c u uo Fi. 3. Aveaed switchin model. d u c L u D 6 (a) D 5 di L u uc dt = - (1) du C c i di dt = - () di L duc dbub dt = - (3) du C b o dbi ib dt = - () whee, i is the id cuent, u c is the teminal voltae of capacito C, is the battey voltae, is the cuent flowin thouh inducto L, d =d 1 -d, d b =1-d 5 -d 6. d i is the duty atio of switch S i (i {1, 6}). III. MODULATION AND CONTROL d u d u c c L u L u u o (b) (c) D 6 D 5 D 6 D 5 D 6 (d) Fi.. Equivalent cicuits unde diffeent opeatin modes. (a) mode I. (b) mode II. (c) mode III. (d) mode IV. A. Modulation Scheme Assume that =Usin(ωt), and that U and ω epesent the id voltae manitude and the anle fequency, espectively. In ode to obtain a sine id cuent with a unity powe facto, accodin to (), the followin equation should be satisfied in the steady state: i» di = I sin( wt) (5) whee, I is the amplitude of the input cuent. If I is eate than zeo, the system woks in the chain status; else the system woks in the dischain status. Fo satisfyin the volt-second balance of the inducto L, accodin to equation (3), equation (6) can be obtained (inoin the effect of the input filte) as follows: d u» d u = d u (6) c b b whee, -1 d, d b 1. It is clea that the value of the battey voltae can be lae o smalle than that of the id voltae. As a esult, the chain/dischain opeation unde buck/boost mode can be ealized. Accodin to (5) and (6), thee is one deee of feedom available. Theefoe thee ae lots of methods to accomplish the contol task mentioned above in theoy. In this context, is contolled to be a constant and d is contolled to vay with a sine shape, as shown in (7). * ( w ) ì d = c sn( I) sin t ( i / i ) ï íi = constant (7) ï î c 1 whee c is the modulation index, and sn() is the sin * * function. i is the efeence cuent. ( i / i ) is an exta

4 A Sinle-Phase Cuent-Souce Bidiectional Convete fo VG Application1 TABLE I DUTY RATIO OF EACH SWITCH UNDER CHARGING/DISCHARGING OPERATION CSR L Wokin Mode d 1 d d 3 d d 5 d 6 Chae Dischae > 1 1-d d 1-d b < 1+d 1 -d 1-d b > 1+d 1 -d -d b 1 < 1 1-d d -d b 1 u c = min( b U,1) compensation tem to impove the dynamic esponses of the duty cycle to pevent distotion of the id cuent. In paticula, when the id voltae is nea the zeo-cossins unde the chain opeation, the powe losses of the cicuit and switches ae moe than the id can supply. As a esult, the cuent can be maintained as a constant and the eney stoed in the inducto will be eleased. Finally, the cuent dop occus. It should be ed that the duty atio d can satuate and the cuent can dop to zeo, o distotion will occu. Theefoe, the value of the inducto L should be lae enouh. In the dischain opeation, the powe losses ae always povided by the battey and the cuent dop will occu. Fom (5) and (7), I, c and satisfy the estiction I =c. Takin the powe losses into account, a minimal is expected. Theefoe, accodin to (6) and (7), c can be iven by: ub c = min(,1) (8) whee, min() is the minimum function. Accodin to (6), d b can be obtained as follows: U ( w ) d = Usin t i i u (9) * b c / ( b ) In this pape, fo minimizin the powe losses the combination of switches is estained futhe as follows: if d >, d 1 =1; othewise, d =1. If I>, d 6 =; othewise, d 6 =1. Theefoe, the duty atio of each switch can be detemined as shown in Table I. u and i sn( I) ( w ) d = c sn( I) sin t I / i d u db = u Fi.. Contol diaam of chain, and dischain. P : u ³ N : u < P : u ³ N : u < P : N : P : N : b i * d 1 d d b d d d b (a) s s s s 3 s 3 s s1 s s5 s6 s 3 s s 1 s s s s 1 s 3 (b) Fi. 5. Opeations of switches unde diffeent modes. (a) Unde chain opeation. (b) Unde dischain opeation. B. Contol Aloithm A contol diaam fo ealizin the chain/dischain is shown in Fi.. To impove the eliability and educe the cost, only the id voltae, the battey teminal voltae and the cuent thouh the inductance L ae sampled. To eulate the cuent thouh the inducto, a contol scheme includin feed-fowad contol and PI feedback contol is pesented. The feed-fowad contol compensates the effects of the id voltae diectly, which inceases the dynamic esponse of the cuent contol. The PI contol will help to stabilizin the system and handle some unknown distubance. A simple open-loop contol is used fo modifyin d to obtain a sine id cuent and to ealize PFC. u L u u u - u T S b u T S u - ub u - ub Fi. 6. Switchin patten aanements unde diffeent modes ( >, < ).

5 6 Jounal of Powe Electonics, Vol. 1, No. 3, May 1 C. Switchin Patten Aanements The pefomance of the convete depends on both the modulation statey and the switchin patten aanement. In this pape, educin the switchin powe losses and output cuent ipple ae the main consideation when aanin the switchin patten. Theefoe, a symmetical switchin patten is usually applied []. Both the font-end switchin patten and the ea-end switchin patten need to be aaned. In addition, coodination contol between the font-end switchin patten and the ea-end switchin patten is equied. In this pape, the in-phase caie PWM modulato is adapted unde the chain opeation, and the inteleaved caie PWM modulato is adapted unde the dischain opeation. Fi. 5 illustates the specific opeation of each switch in each switchin peiod. An example is iven in Fi.6 to show the chanes of the voltae acoss inducto L and the cuent. Hee the voltae dops acoss the IGBTs and the diodes ae nelected. Fom Fi.6 the switchin pattens ae bilateally symmetical, and twice commutations occu in each switchin peiod. IV. LOSSES ANALYSIS The powe losses calculation of a powe convete is cucial since it influences the desin of the coolin system of powe electonic equipment and is associated with the efficiency of the convete [33]. Usually, the powe losses duin the off-state can be nelected since they ae consideably low when compaed to the amount of the total conduction losses and switchin losses. Theefoe, the two main kinds of powe semiconducto losses ae consideed hee: conduction losses and switchin losses. Accodin to [33], [3], the computational fomulas fo the conduction losses and switchin losses ae expessed as: 1 T Pc _ S = ( V CE it _ av + CE it _ ms ) dt T ò (1) 1 T Pc _ D = ( V F id _ av + F id _ ms ) dt T ò (11) 1 T v i Psw = fs E SWR dt (1) T ò V I whee P c-s is the conduction loss of the IGBT, P c-d is the conduction loss of the diode, P sw is the switchin loss of the IGBT o diode, T is the peiod of the inteated function, f S is the switchin fequency, V CE and V F ae the fowad voltaes when the cuent is zeo, CE and F ae the incemental esistances of the IGBT and the diode, i T_av and i D_av ae the aveae of the cuents flowin thouh the IGBT and diode, i T_ms and i D_ms ae the RMS of the cuent flowin thouh the IGBT and diode, E SWR is the switchin eney at the loss efeence conditions (V R and I R ). Fo the IGBT, E SWR epesents the tun-on eney E on_t and the tun-off eney E off_t ; fo the diode, E SWR is typically caused by the evese ecovey losses E _D. R R TABLE II LOSSES ANALYSIS WHEN IS POSITIVE UNDER CHARGING OPERATION IGBT/diode S 1 D 1 S D S 3 D 3 losses IGBT/diode S D S 5 D 5 S 6 D 6 losses , Conduction losses;, Tun-on losses; 3, Tun-off losses h / % Fi. 7. Efficiency vaiation with the battey voltae. Accodin to the peviously mentioned modulation scheme, it can be seen that the chain opeation and dischain opeation have the same switchin losses and only the conduction losses ae slihtly diffeent. To avoid epetition, only the losses unde the chain opeation ae calculated. Due to symmety, only the losses duin the positive half cycle ae taken into account and the esults of the loss analysis ae summaized in Table II. Note that the evese voltae acoss diode D is neative in the tun-off pocess. As a esult, thee is no tun-off loss happenin to D. A simila analysis can be applied to S. The total conduction losses P c_font and the total switchin losses P sw_font of the font-end SCSR can be expessed as: Pc _ font = Pc _ S 1 c _ S c _ S c _ D 1 c _ D c _ D (13) =( V + V ) i + ( + ) i F CE F CE Psw _ font = Psw _ S sw _ D fsui = ( Eon _ T + Eoff _ T + E _ D ) p VR IR (1) The total conduction losses P c_ea and the total switchin losses P sw_ea of the ea-end ASN can be expessed as: Pc _ ea = Pc _ S 5 c _ D 5 c _ D6 i = ( ub ( VCE + VF ) + cu ( VF - VCE )) + u (15) b i u b ( ub ( CE + F ) + cu ( F - CE )) Psw _ ea = Psw _ S 5 sw _ D5. (16) fsubi = ( Eon _ T + Eoff _ T + E _ D ) VR IR The total losses ae iven by:

6 A Sinle-Phase Cuent-Souce Bidiectional Convete fo VG Application3 TABLE III PARAMETERS USED FOR SIMULATION paametes Amplitude of input phase voltae U Input filte inducto L Input filte capacito C value 9V.6 mh 1 uf Output filte inducto L 1.6mH Output filte capacito C μf The efeence cuent i A Switchin fequency f s * Value of the battey voltae khz 6V/1V input voltae u input cuent i output voltae u P = P. (17) total c _ font sw _ font c _ ea sw _ ea Accodin to the foeoin calculation esults, the lae the cuent is, the eate the semiconducto losses become. Fi. 7 shows the efficiency vaiation as a function of the battey voltae when the id voltae is 9V/15V and the cuent is A/1A. As can be seen, the efficiency at U=15V is hihe than the efficiency at U=9V unde the same battey voltae conditions. Thei maximum efficiency is lae than 87% and 9% elatively, and it is moe effective when the id voltae is nea the battey voltae. When is A, the amplitude of the id voltae is 9V and the battey voltaes ae 6V and 1V. Accodin to the powe analyze, the measued efficiencies of the convete ae 77% and 83%. Fom Fi.7, it can be seen that the measued efficiencies ae slihtly smalle than the theoetical efficiencies (83.3% fo =6V, 87.7% fo =1V) since the losses caused by the passive components ae taken into consideation in the expeiments. V. SIMULATION AND EXPERIMENTAL RESULTS A. Simulation To validate the poposed topoloy and method, simulations based on the Matlab/Simulink envionment ae implemented in this section. The models of the semiconducto devices and battey ae fom the SimPoweSystems/Powe Electonics libay. A schematic diaam of the sinle-phase cuentsouce bidiectional convete in the simulation is shown in Fi. 1. The paametes used in the simulation ae listed in Table III. The loads ae Ah capacity lead-acid batteies with two diffeent nominal voltaes: 6V and 1V, espectively. The simulation esults in Fi. 8 show the pefomance of the poposed convete. Fom the top, the id voltae, the id cuent i, the output voltae u, the cuent, the battey voltae and the battey cuent ae sequentially displayed. The simulation stats with the chain opeation and is chaned to the dischain opeation at.3s. It can be clealy seen that in the chain mode, the id cuents ae in inducto cuent battey voltae battey cuent (a) input voltae u input cuent i output voltae u inducto cuent battey voltae battey cuent (b) Fi. 8. Simulation esults of chain/dischain when efeence cuent is Amps. (a) The battey voltae iv. (b) The battey voltae is1v.

7 6 Jounal of Powe Electonics, Vol. 1, No. 3, May 1 u Fi. 9. Pototype of the sinle-phase cuent-souce bidiectional convete built in the laboatoy. (d) (.ms/div) i i (.ms/div) (a) u (e) (.ms/div) i (b) (.ms/div) i (f) (.ms/div) (c) (.ms/div) Fi. 1. Expeimental esults. (a) Gid voltae, id cuent, battey voltae and chain cuent in chain mode when battey voltae iv. (b) Output voltae and cuent in chain mode when battey voltae iv. (c) Gid voltae, id cuent, battey voltae and chain cuent in dischain mode when battey voltae iv. (d) Output voltae and cuent in chain mode when battey voltae iv. (e) Gid voltae, id cuent, battey voltae and chain cuent in chain mode when battey voltae is1v. (f) Gid voltae, id cuent, battey voltae and chain cuent in dischain mode when battey voltae is 1V.

8 A Sinle-Phase Cuent-Souce Bidiectional Convete fo VG Application5 phase with the id voltaes, while in the dischain mode, the input cuents and the id voltaes ae out of phase by 18 o. An inteestin phenomenon can be found in the fact that the inducto cuent is distoted nea the id voltae zeo-cossin eion in all of the chain modes, even thouh it is desined to be contolled as a constant value. The eason is that the fowad voltae dop of the IGBTs and diodes makes the inducto cuent lose contol when the input voltae is smalle than the sum of the voltae dops due to the semiconducto devices in the poposed convete. Thouh the inducto cuent is distoted, it does affect the input cuent due to the eal-time compensation of d. In addition, in the dischain mode, as the battey is a constant voltae souce, it can ovecome the fowad voltae and keep the inducto cuent constant. As a esult, the inducto cuent is contolled well without distotion. In conclusion, the input cuent is in phase with the input voltae, and it is close to a unity powe facto, and the input cuent is sinusoidal in all of the modes. B. Expeiments A pototype fo the poposed convete is built in the lab fo expeimental veification, as shown in Fi. 9. The paamete settins ae the same as those in the simulation. The IGBTs used in the main cicuit ae 1MBH6D-1, and the fast ecovey diodes ae DSEI3-1A. The micopocesso of the convete was ealized by a combination of a TMS3F8335 diital sinal pocesso and a field poammable ate aay EPC8T1C8N FPGA. Two oups of lead-acid battey packs ae used in this expeiment, and thei specifications ae 6V/Ah and 1V/Ah, espectively. The expeimental esults pesented in Fi.1 show the pefomance of the sinle-phase cuent-souce bidiectional convete opeatin with battey voltaes of 6V and 1V. The efeence output cuent is always set to A. Fi. 1(a) illustates the id voltae, the id cuent, the battey voltae and the chain cuent in the chain mode when a lead-acid battey pack of 6V/Ah is connected to the convete. It can be found that the id cuent is sinusoidal and in phase with the id voltae. Fi. 1(b) and Fi. 1(d) show the measued wavefoms of the output voltae and cuent in the chain mode and the dischain mode, espectively. As can be seen, in addition to bein nea the zeo-cossins of the id voltae when chain, the cuent tacks its efeence well with a small ipple. This indicates that the switchin pattens used in this pape wok well. As can be seen fom Fi. 1(a) and Fi. 1(b), due to the fact that the compensation thouh the cuent dop occus, the distotion does occu to the id cuent. To feed eney back to the id, the convete should opeate in the dischain mode, and the expeimental esults ae illustated in Fi. 1(c). Since the battey povides eney back to the id, the id cuent is sinusoidal and in phase opposition to the id voltae. To veify that the poposed topoloy has a lae output voltae ane, a lead-acid battey pack of 1V/Ah is connected to the convete. Fi. 1(e) and Fi. 1(f) show the expeimental wavefoms. As can be seen, the expeimental esults ae in ood aeement with the simulation esults. It can be concluded that the hih quality of the input cuent and hih pefomance of the chain and dischain ae easily obtained unde the chain/dischain opeation. VI. CONCLUSIONS This study pesents a sinle-phase cuent-souce bidiectional convete topoloy which is suitable fo an inteface in a VG system. The poposed convete can wok in buck-boost chain/dischain opeation, and offes diffeent voltae levels that ae appopiate fo chain/dischain the batteies. In this pape, the output cuent is contolled as a constant. The feed-fowad contol is necessay to ensue the id cuent quality. The coodinated contol of the font-end switchin patten and ea-end switchin patten is used to educe the cuent ipple. The semiconducto losses ae also analyzed in detail. In conclusion, the poposed convete has a numbe of attactive featues, such as a simplified topoloy, a bidiectional powe flow, eliability and a wide output voltae ane, and it is a ood candidate fo VG applications. ACKNOWLEDGMENT This wok was suppoted by the Hunan Povincial Natual Science Foundation of China unde Gant 1JJ535 and the National Hih-tech R&D Poam of China (863 Poam) unde Gant 1AA5163 and 1AA516. REFERENCES [1] M. Kinte-Meye, K. Schneide, and R. Patt, Impacts assessment of plu-in hybid electic vehicles on electic utilities and eional U.S. powe ids Pat IV technical analysis, Pacific Noth West National Lab., Richland, WA, PNNL-SA-61669, Jan. 7. [] J. A. P. Lopes, F. J. Soaes, and P. M. R. Almeida, Inteation of electic vehicles in the electic powe system, in Poc. IEEE, Vol. 99, No. 1, pp , Jan. 11. [3] W. Kempton and J. Tomic, Vehicle-to-id powe fundamentals: Calculatin capacity and net evenue, J. Powe Souces, Vol. 1, No. 1, pp , Jun. 5. [] V. V. Viswanathan and M. 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Citko, Application of the AC link in powe convesion systems, in Poc. EPE 97, pp. 59-6, [33] M. H. Biehoff and F. W. Fuchs, Semiconducto losses in voltae souce and cuent souce IGBT convetes based on analytical deivation, in Poc. IEEE 35th Powe Electonics Specialists Conf. (PESC), Vol., pp.836-8,. [3] B. Wan and G. Venkataamanan, Analytical modelin of semiconducto losses in matix convetes, in Powe Electonics and Motion Contol Confeence, 6. IPEMC 6. CES/IEEE 5th Intenational, Vol. 1, pp. 1-8, Au, 6. Hua Han was bon in Hunan, China, in 197. She eceived he M.S. and Ph.D. deees fom the School of Infomation Science and Enineein, Cental South Univesity, Chansha, China, in 1998 and 8, espectively. She was a Visitin Schola at the Univesity of Cental Floida, Olando,

10 A Sinle-Phase Cuent-Souce Bidiectional Convete fo VG Application7 FL, USA, fom Apil 11 to Apil 1. She is pesently an Associate Pofesso with the School of Infomation Science and Enineein, Cental South Univesity. He cuent eseach inteests include mico-ids, enewable eney powe eneation systems and powe electonic equipment. Yonlu Liu was bon in Chonqin, China, in He eceived his B.S. deee in Electonic Enineein fom the Cental South Univesity, Chansha, China, in 1, whee he is pesently pusuin his M.S. deee in Electical Enineein. His cuent eseach inteests include matix convetes and ac/ convetes. Yao Sun was bon in Hunan, China, in He eceived his B.S., M.S. and Ph.D. deees fom the School of Infomation Science and Enineein, Cental South Univesity, Chansha, China, in, 7 and 1, espectively. He has been an Associate Pofesso with the School of Infomation Science and Enineein, Cental South Univesity. His cuent eseach inteests include matix convetes, mico-ids and wind eney convesion systems. Hui Wan was bon in Hunan, China, in 198. He eceived his B.S. and M.S. deees fom the Cental South Univesity, Chansha, China, in 8 and 11, espectively, whee he is pesently pusuin his Ph.D. deee. His cuent eseach inteests include indiect matix convetes and DC/DC convetes. Mei Su was bon in Hunan, China, She eceived he B.S., M.S. and Ph.D. deees fom the School of Infomation Science and Enineein, Cental South Univesity, Chansha, China, in 1989, 199 and 5, espectively. Since 6, she has been a Pofesso with School of Infomation Science and Enineein, Cental South Univesity. He cuent eseach inteests include matix convetes and wind eney convesion systems.