A 2.4GHz Cascode CMOS Low Noise Amplifier

Size: px
Start display at page:

Download "A 2.4GHz Cascode CMOS Low Noise Amplifier"

Transcription

1 A 2.4GHz Cascode CMOS Low Noise Amplifier Gustavo Campos Martins, Fernando Rangel de Sousa Federal University of Santa Catarina (UFSC) Integrated Circuits Laboratory (LCI) August 31, 2012 G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

2 Summary 1 Introduction 2 Design Methodology 3 Simulation and Measurement Results 4 Conclusion G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

3 Summary 1 Introduction 2 Design Methodology 3 Simulation and Measurement Results 4 Conclusion G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

4 Goal Applications require low power and small footprint The goal of this work is to design a low noise amplifier for: ISM 2.4GHz 50 Ω input and output impedances 0.18 µm CMOS technology 1.8 V supply voltage G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

5 Single transistor amplifiers Vdd Vdd Vdd LNAs are usually designed with a single transistor: Common-source: Driver; Poor reverse isolation Common-gate: Matching with higher bandwidth; Noise Common-drain: gain 1; buffer G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

6 Single transistor amplifiers Vdd Vdd Vdd LNAs are usually designed with a single transistor: Common-source: Driver; Poor reverse isolation Common-gate: Matching with higher bandwidth; Noise Common-drain: gain 1; buffer G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

7 Single transistor amplifiers Vdd Vdd Vdd LNAs are usually designed with a single transistor: Common-source: Driver; Poor reverse isolation Common-gate: Matching with higher bandwidth; Noise Common-drain: gain 1; buffer G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

8 Single transistor amplifiers Vdd Vdd Vdd LNAs are usually designed with a single transistor: Common-source: Driver; Poor reverse isolation Common-gate: Matching with higher bandwidth; Noise Common-drain: gain 1; buffer G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

9 Cascode amplifier It is possible to obtain better results using combinations of the single-transistor topologies The cascode topology was chosen Can maintain gain up to high frequencies High reverse isolation Reduces voltage swing at the output Cannot be as low-noise as a single transistor amplifier due to the noise added by the second element G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

10 Summary 1 Introduction 2 Design Methodology 3 Simulation and Measurement Results 4 Conclusion G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

11 Cascode Topology G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

12 Design Methodology STEP 1: Current density that provides the lowest NF min v 2 no,r g v 2 no,i d 4kTr g g 2 m1r 2 L I D 4kT γg m1 R 2 L I D v 2 no,i g 4 5 kt δω2 C 2 gs1g m1 R 2 L I D P out = v 2 out R L = g 2 mv 2 inr L I D Increasing I D should decrease NF, but at higher currents other effects are observed. Lowest NF min at I D /W = 60 µa/µm G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

13 Design Methodology STEP 2: Size the transistor making R{Y opt } = 1/50 S F = F min + R n G s Y s Y opt 2 L of transistors is kept minimum for maximum f T W = 46.5 µm G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

14 Design Methodology STEP 3: place and size L S for R{Z in } = 50 Ω. Z in (s) = 1 sc gs1 + s(l S + L G ) + g m1 C gs1 L S L S = 1.55nH G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

15 Design Methodology STEP 4: Place and size the L G so that Im{Z in } = 0 L G = 1 ω 2 C gs1 L S L g = 20.27nH G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

16 Design Methodology The W of cascoded transistor (common-gate) was chosen to provide enough gain and low parasitic capacitances The W of the buffer transistors were chosen to present low parasitic capacitances and provide 50 Ω output impedance at a reasonable I Buffer The tank circuit was designed to resonate at 2.4GHz, parasitic capacitances must be considered G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

17 Summary 1 Introduction 2 Design Methodology 3 Simulation and Measurement Results 4 Conclusion G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

18 Layout and Test-bench VNA 1 2 LNA Bias Vdd gnd Buffer SPA G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

19 S-parameters Measurement and Comparison S 21 (db) S 12 (db) Measured Simulated Frequency (GHz) Measured Simulated At 2.4 GHz S 21,meas S 21,sim = = 2.3 db S 12,meas S 12,sim = 34 ( 45) = 11 db Frequency (GHz) G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

20 S-parameters Measurement and Comparison S 22 (db) S 11 (db) Measured Simulated Frequency (GHz) Measured Simulated At 2.4 GHz S 22,meas S 22,sim = 13.1 ( 16.2) = 3.1 db S 11,meas S 11,sim = 8 ( 23) = 15 db Frequency (GHz) G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

21 Linearity analysis S 21 (db) dB compression=-17.5dbm IIP3 = -7.8 dbm Input Power (dbm) Simulation IIP3 = -6.6 dbm G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

22 Measuring Noise Figure (Y-Factor Method) Pre-amp Sp Spectrum Analyzer LNA Pre-amp Spectrum Analyzer Noise Source Noise Source ENR = T H T C T 0 F T = ENR Y 1, where Y = N off N on F LNA = F T F 2 1 G LNA G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

23 Noise Figure in post-layout simulation Noise Figure Minimum Noise Figure NF (db) NF=2.8dB 4 2 Minimum NF=2.0dB Frequency (GHz) G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

24 Noise Figure NF calculated NF smooth NF simulation 7 NF [db] NF = 4.2 db at 2.4 GHz (2.8 db in simulation) G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

25 Comparison with recent works Parameter [1] [2] [3] [4] [5] This Work Gain (db) NF (db) IIP3 (dbm) Core power (mw) Area (mm 2 ) Supply voltage (V) Technology (nm) F. Belmas, F. Hameau, and J. Fournier. A 1.3mW 20dB gain low power inductorless LNA with 4dB noise figure for 2.45GHz ISM band. In Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE, pages 1-4, june S. Manjula and D. Selvathi. Design of micro power CMOS LNA for healthcare applications. In Devices, Circuits and Systems (ICDCS), 2012 International Conference on, pages , march Y. Shen, H. Yang, and R. Luo. A fully integrated 0.18µm CMOS low noise amplifier for 2.4-GHz applications. In ASIC, ASICON th International Conference On, volume 2, pages , oct T. Taris, A. Mabrouki, H. Kraimia, Y. Deval, and J.B. Begueret. Reconfigurable ultra low power LNA for 2.4GHz wireless sensor networks. In Electronics, Circuits, and Systems (ICECS), th IEEE International Conference on, pages 74 77, dec L. Zhenying, S. Rustagi, M. Li, and Y. Lian. A 1V, 2.4GHz fully integrated LNA using 0.18µm CMOS technology. In ASIC, Proceedings. 5th International Conference on, volume 2, pages Vol.2, oct G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

26 Summary 1 Introduction 2 Design Methodology 3 Simulation and Measurement Results 4 Conclusion G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

27 Conclusion A Cascode CMOS LNA operating at 2.4 GHz with 4.2 db NF and 14 db gain was designed. The LNA was fabricated and tested. The S-parameters, linearity and NF were analyzed. It has been observed a shift in frequency in S 11, which was due to the inaccuracy in high frequency of the component models and process variation. The other S-parameters and linearity remained within specifications. The measured NF was 1.4 db above the simulated. The LNA has a small area (0.15 mm 2 ). G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

28 Conclusion Thank you G. C. Martins, F. R. de Sousa (UFSC-LCI) A 2.4GHz Cascode CMOS LNA August 31, / 25

CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN

CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 93 CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 4.1 INTRODUCTION Ultra Wide Band (UWB) system is capable of transmitting data over a wide spectrum of frequency bands with low power and high data

More information

HIGH-GAIN CMOS LOW NOISE AMPLIFIER FOR ULTRA WIDE-BAND WIRELESS RECEIVER

HIGH-GAIN CMOS LOW NOISE AMPLIFIER FOR ULTRA WIDE-BAND WIRELESS RECEIVER Progress In Electromagnetics Research C, Vol. 7, 183 191, 2009 HIGH-GAIN CMOS LOW NOISE AMPLIFIER FOR ULTRA WIDE-BAND WIRELESS RECEIVER A. Dorafshan and M. Soleimani Electrical Engineering Department Iran

More information

Low-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity

Low-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity Low-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity Marvin Onabajo Assistant Professor Analog and Mixed-Signal Integrated Circuits (AMSIC) Research Laboratory Dept.

More information

A Three-Stage 60GHz CMOS LNA Using Dual Noise-Matching Technique for 5dB NF

A Three-Stage 60GHz CMOS LNA Using Dual Noise-Matching Technique for 5dB NF A Three-Stage 60GHz CMOS LNA Using Dual Noise-Matching Technique for 5dB NF Ning Li 1, Kenichi Okada 1, Toshihide Suzuki 2, Tatsuya Hirose 2 and Akira 1 1. Tokyo Institute of Technology, Japan 2. Advanced

More information

An Inductor-Based 52-GHz 0.18 µm SiGe HBT Cascode LNA with 22 db Gain

An Inductor-Based 52-GHz 0.18 µm SiGe HBT Cascode LNA with 22 db Gain An Inductor-Based 52-GHz 0.18 µm SiGe HBT Cascode LNA with 22 db Gain Michael Gordon, Sorin P. Voinigescu University of Toronto Toronto, Ontario, Canada ESSCIRC 2004, Leuven, Belgium Outline Motivation

More information

T. Taris, H. Kraïmia, JB. Begueret, Y. Deval. Bordeaux, France. 12/15-16, 2011 Lauzanne, Switzerland

T. Taris, H. Kraïmia, JB. Begueret, Y. Deval. Bordeaux, France. 12/15-16, 2011 Lauzanne, Switzerland 1 MOSFET Modeling for Ultra Low-Power RF Design T. Taris, H. Kraïmia, JB. Begueret, Y. Deval Bordeaux, France 2 Context More services in Environment survey Energy management Process optimisation Aging

More information

SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver

SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver Arvin R. Shahani, Derek K. Shaeffer, Thomas H. Lee Stanford University, Stanford, CA At submicron channel lengths, CMOS is

More information

Design of a Low Noise Amplifier using 0.18µm CMOS technology

Design of a Low Noise Amplifier using 0.18µm CMOS technology The International Journal Of Engineering And Science (IJES) Volume 4 Issue 6 Pages PP.11-16 June - 2015 ISSN (e): 2319 1813 ISSN (p): 2319 1805 Design of a Low Noise Amplifier using 0.18µm CMOS technology

More information

RF2418 LOW CURRENT LNA/MIXER

RF2418 LOW CURRENT LNA/MIXER LOW CURRENT LNA/MIXER RoHS Compliant & Pb-Free Product Package Style: SOIC-14 Features Single 3V to 6.V Power Supply High Dynamic Range Low Current Drain High LO Isolation LNA Power Down Mode for Large

More information

Dual-band LNA Design for Wireless LAN Applications. 2.4 GHz LNA 5 GHz LNA Min Typ Max Min Typ Max

Dual-band LNA Design for Wireless LAN Applications. 2.4 GHz LNA 5 GHz LNA Min Typ Max Min Typ Max Dual-band LNA Design for Wireless LAN Applications White Paper By: Zulfa Hasan-Abrar, Yut H. Chow Introduction Highly integrated, cost-effective RF circuitry is becoming more and more essential to the

More information

FD-SOI FOR RF IC DESIGN. SITRI LETI Workshop Mercier Eric 08 september 2016

FD-SOI FOR RF IC DESIGN. SITRI LETI Workshop Mercier Eric 08 september 2016 FD-SOI FOR RF IC DESIGN SITRI LETI Workshop Mercier Eric 08 september 2016 UTBB 28 nm FD-SOI : RF DIRECT BENEFITS (1/2) 3 back-end options available Routing possible on the AluCap level no restriction

More information

Measurement and Modeling of CMOS Devices in Short Millimeter Wave. Minoru Fujishima

Measurement and Modeling of CMOS Devices in Short Millimeter Wave. Minoru Fujishima Measurement and Modeling of CMOS Devices in Short Millimeter Wave Minoru Fujishima Our position We are circuit designers. Our final target is not device modeling, but chip demonstration. Provided device

More information

LOW POWER CMOS LNA FOR MULTI-STANDARD WIRELESS APPLICATIONS Vaithianathan.V 1, Dr.Raja.J 2, Kalimuthu.Y 3

LOW POWER CMOS LNA FOR MULTI-STANDARD WIRELESS APPLICATIONS Vaithianathan.V 1, Dr.Raja.J 2, Kalimuthu.Y 3 Research Article LOW POWER CMOS LNA FOR MULTI-STANDARD WIRELESS APPLICATIONS Vaithianathan.V 1, Dr.Raja.J 2, Kalimuthu.Y 3 Address for Correspondence 1,3 Department of ECE, SSN College of Engineering 2

More information

Design of a Low Power 5GHz CMOS Radio Frequency Low Noise Amplifier Rakshith Venkatesh

Design of a Low Power 5GHz CMOS Radio Frequency Low Noise Amplifier Rakshith Venkatesh Design of a Low Power 5GHz CMOS Radio Frequency Low Noise Amplifier Rakshith Venkatesh Abstract A 5GHz low power consumption LNA has been designed here for the receiver front end using 90nm CMOS technology.

More information

A GSM Band Low-Power LNA 1. LNA Schematic

A GSM Band Low-Power LNA 1. LNA Schematic A GSM Band Low-Power LNA 1. LNA Schematic Fig1.1 Schematic of the Designed LNA 2. Design Summary Specification Required Simulation Results Peak S21 (Gain) > 10dB >11 db 3dB Bandwidth > 200MHz (

More information

Low-Noise Amplifiers

Low-Noise Amplifiers 007/Oct 4, 31 1 General Considerations Noise Figure Low-Noise Amplifiers Table 6.1 Typical LNA characteristics in heterodyne systems. NF IIP 3 db 10 dbm Gain 15 db Input and Output Impedance 50 Ω Input

More information

DESIGN OF 3 TO 5 GHz CMOS LOW NOISE AMPLIFIER FOR ULTRA-WIDEBAND (UWB) SYSTEM

DESIGN OF 3 TO 5 GHz CMOS LOW NOISE AMPLIFIER FOR ULTRA-WIDEBAND (UWB) SYSTEM Progress In Electromagnetics Research C, Vol. 9, 25 34, 2009 DESIGN OF 3 TO 5 GHz CMOS LOW NOISE AMPLIFIER FOR ULTRA-WIDEBAND (UWB) SYSTEM S.-K. Wong and F. Kung Faculty of Engineering Multimedia University

More information

Design, Analysis and Measurement Results of a Fully- Integrated Low-Power LNA Presenting Faults

Design, Analysis and Measurement Results of a Fully- Integrated Low-Power LNA Presenting Faults Design, Analysis and Measurement Results of a Fully- Integrated Low-Power LNA Presenting Faults P. M. Moreira e Silva and F. Rangel de Sousa Radio Frequency Research Group - GRF Electrical Engineering

More information

Design and Implementation of a 1-5 GHz UWB Low Noise Amplifier in 0.18 um CMOS

Design and Implementation of a 1-5 GHz UWB Low Noise Amplifier in 0.18 um CMOS Downloaded from vbn.aau.dk on: marts 20, 2019 Aalborg Universitet Design and Implementation of a 1-5 GHz UWB Low Noise Amplifier in 0.18 um CMOS Shen, Ming; Tong, Tian; Mikkelsen, Jan H.; Jensen, Ole Kiel;

More information

65-nm CMOS, W-band Receivers for Imaging Applications

65-nm CMOS, W-band Receivers for Imaging Applications 65-nm CMOS, W-band Receivers for Imaging Applications Keith Tang Mehdi Khanpour Patrice Garcia* Christophe Garnier* Sorin Voinigescu University of Toronto, *STMicroelectronics University of Toronto 27

More information

A 60GHz CMOS Power Amplifier Using Varactor Cross-Coupling Neutralization with Adaptive Bias

A 60GHz CMOS Power Amplifier Using Varactor Cross-Coupling Neutralization with Adaptive Bias A 6GHz CMOS Power Amplifier Using Varactor Cross-Coupling Neutralization with Adaptive Bias Ryo Minami,Kota Matsushita, Hiroki Asada, Kenichi Okada,and Akira Tokyo Institute of Technology, Japan Outline

More information

1-13GHz Wideband LNA utilizing a Transformer as a Compact Inter-stage Network in 65nm CMOS

1-13GHz Wideband LNA utilizing a Transformer as a Compact Inter-stage Network in 65nm CMOS -3GHz Wideband LNA utilizing a Transformer as a Compact Inter-stage Network in 65nm CMOS Hyohyun Nam and Jung-Dong Park a Division of Electronics and Electrical Engineering, Dongguk University, Seoul E-mail

More information

Low Noise Amplifier Design

Low Noise Amplifier Design THE UNIVERSITY OF TEXAS AT DALLAS DEPARTMENT OF ELECTRICAL ENGINEERING EERF 6330 RF Integrated Circuit Design (Spring 2016) Final Project Report on Low Noise Amplifier Design Submitted To: Dr. Kenneth

More information

Narrowband CMOS RF Low-Noise Amplifiers

Narrowband CMOS RF Low-Noise Amplifiers Narrowband CMOS RF Low-Noise Amplifiers Prof. Thomas H. Lee Stanford University tomlee@ee.stanford.edu http://www-smirc.stanford.edu Outline A brief review of classic two-port noise optimization Conditions

More information

A CMOS GHz UWB LNA Employing Modified Derivative Superposition Method

A CMOS GHz UWB LNA Employing Modified Derivative Superposition Method Circuits and Systems, 03, 4, 33-37 http://dx.doi.org/0.436/cs.03.43044 Published Online July 03 (http://www.scirp.org/journal/cs) A 3. - 0.6 GHz UWB LNA Employing Modified Derivative Superposition Method

More information

Capacitive-Division Traveling-Wave Amplifier with 340 GHz Gain-Bandwidth Product

Capacitive-Division Traveling-Wave Amplifier with 340 GHz Gain-Bandwidth Product Hughes Presented at the 1995 IEEE MTT-S Symposium UCSB Capacitive-Division Traveling-Wave Amplifier with 340 GHz Gain-Bandwidth Product J. Pusl 1,2, B. Agarwal1, R. Pullela1, L. D. Nguyen 3, M. V. Le 3,

More information

Performance Comparison of RF CMOS Low Noise Amplifiers in 0.18-µm technology scale

Performance Comparison of RF CMOS Low Noise Amplifiers in 0.18-µm technology scale Performance Comparison of RF CMOS Low Noise Amplifiers in 0.18-µm technology scale M.Sumathi* 1, S.Malarvizhi 2 *1 Research Scholar, Sathyabama University, Chennai -119,Tamilnadu sumagopi206@gmail.com

More information

Design of a Wideband LNA for Human Body Communication

Design of a Wideband LNA for Human Body Communication Design of a Wideband LNA for Human Body Communication M. D. Pereira and F. Rangel de Sousa Radio Frequency Integrated Circuits Research Group Federal University of Santa Catarina - UFSC Florianopólis-SC,

More information

Design technique of broadband CMOS LNA for DC 11 GHz SDR

Design technique of broadband CMOS LNA for DC 11 GHz SDR Design technique of broadband CMOS LNA for DC 11 GHz SDR Anh Tuan Phan a) and Ronan Farrell Institute of Microelectronics and Wireless Systems, National University of Ireland Maynooth, Maynooth,Co. Kildare,

More information

Designing a 960 MHz CMOS LNA and Mixer using ADS. EE 5390 RFIC Design Michelle Montoya Alfredo Perez. April 15, 2004

Designing a 960 MHz CMOS LNA and Mixer using ADS. EE 5390 RFIC Design Michelle Montoya Alfredo Perez. April 15, 2004 Designing a 960 MHz CMOS LNA and Mixer using ADS EE 5390 RFIC Design Michelle Montoya Alfredo Perez April 15, 2004 The University of Texas at El Paso Dr Tim S. Yao ABSTRACT Two circuits satisfying the

More information

Aspemyr, Lars; Jacobsson, Harald; Bao, Mingquan; Sjöland, Henrik; Ferndal, Mattias; Carchon, G

Aspemyr, Lars; Jacobsson, Harald; Bao, Mingquan; Sjöland, Henrik; Ferndal, Mattias; Carchon, G A 15 GHz and a 2 GHz low noise amplifier in 9 nm RF CMOS Aspemyr, Lars; Jacobsson, Harald; Bao, Mingquan; Sjöland, Henrik; Ferndal, Mattias; Carchon, G Published in: Topical Meeting on Silicon Monolithic

More information

A COMPACT WIDEBAND MATCHING 0.18-µM CMOS UWB LOW-NOISE AMPLIFIER USING ACTIVE FEED- BACK TECHNIQUE

A COMPACT WIDEBAND MATCHING 0.18-µM CMOS UWB LOW-NOISE AMPLIFIER USING ACTIVE FEED- BACK TECHNIQUE Progress In Electromagnetics Research C, Vol. 16, 161 169, 2010 A COMPACT WIDEBAND MATCHING 0.18-µM CMOS UWB LOW-NOISE AMPLIFIER USING ACTIVE FEED- BACK TECHNIQUE J.-Y. Li, W.-J. Lin, and M.-P. Houng Department

More information

High Gain Low Noise Amplifier Design Using Active Feedback

High Gain Low Noise Amplifier Design Using Active Feedback Chapter 6 High Gain Low Noise Amplifier Design Using Active Feedback In the previous two chapters, we have used passive feedback such as capacitor and inductor as feedback. This chapter deals with the

More information

Design of mm-wave Injection Locking Power Amplifier. Student: Jiafu Lin Supervisor: Asst. Prof. Boon Chirn Chye

Design of mm-wave Injection Locking Power Amplifier. Student: Jiafu Lin Supervisor: Asst. Prof. Boon Chirn Chye Design of mm-wave Injection Locking Power Amplifier Student: Jiafu Lin Supervisor: Asst. Prof. Boon Chirn Chye 1 Design Review Ref. Process Topology VDD (V) RFIC 2008[1] JSSC 2007[2] JSSC 2009[3] JSSC

More information

Texas A&M University Electrical Engineering Department ECEN 665. Laboratory #3: Analysis and Simulation of a CMOS LNA

Texas A&M University Electrical Engineering Department ECEN 665. Laboratory #3: Analysis and Simulation of a CMOS LNA Texas A&M University Electrical Engineering Department ECEN 665 Laboratory #3: Analysis and Simulation of a CMOS LNA Objectives: To learn the use of s-parameter and periodic steady state (pss) simulation

More information

A Volterra Series Approach for the Design of Low-Voltage CG-CS Active Baluns

A Volterra Series Approach for the Design of Low-Voltage CG-CS Active Baluns A Volterra Series Approach for the Design of Low-Voltage CG-CS Active Baluns Shan He and Carlos E. Saavedra Gigahertz Integrated Circuits Group Department of Electrical and Computer Engineering Queen s

More information

A Low Power Single Ended Inductorless Wideband CMOS LNA with G m Enhancement and Noise Cancellation

A Low Power Single Ended Inductorless Wideband CMOS LNA with G m Enhancement and Noise Cancellation 2017 International Conference on Electronic, Control, Automation and Mechanical Engineering (ECAME 2017) ISBN: 978-1-60595-523-0 A Low Power Single Ended Inductorless Wideband CMOS LNA with G m Enhancement

More information

65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers

65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers 65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers Michael Gordon, Terry Yao, Sorin P. Voinigescu University of Toronto March 10 2006, UBC, Vancouver Outline Motivation mm-wave

More information

ABabcdfghiejklStanford University

ABabcdfghiejklStanford University Design Methodology or Power-Constrained Low Noise RF Circuits Jung-Suk Goo, Hee-Tae Ahn, Donald J Ladwig, Zhiping Yu, Thomas H Lee, and Robert W Dutton, Stanord University, Stanord CA National Semiconductor,

More information

DESIGN ANALYSIS AND COMPARATIVE STUDY OF RF RECEIVER FRONT-ENDS IN 0.18-µM CMOS

DESIGN ANALYSIS AND COMPARATIVE STUDY OF RF RECEIVER FRONT-ENDS IN 0.18-µM CMOS International Journal of Electrical and Electronics Engineering Research Vol.1, Issue 1 (2011) 41-56 TJPRC Pvt. Ltd., DESIGN ANALYSIS AND COMPARATIVE STUDY OF RF RECEIVER FRONT-ENDS IN 0.18-µM CMOS M.

More information

Design Methodology and Applications of SiGe BiCMOS Cascode Opamps with up to 37-GHz Unity Gain Bandwidth

Design Methodology and Applications of SiGe BiCMOS Cascode Opamps with up to 37-GHz Unity Gain Bandwidth Design Methodology and Applications of SiGe BiCMOS Cascode Opamps with up to 37-GHz Unity Gain Bandwidth S.P. Voinigescu, R. Beerkens*, T.O. Dickson, and T. Chalvatzis University of Toronto *STMicroelectronics,

More information

Quadrature GPS Receiver Front-End in 0.13μm CMOS: The QLMV cell

Quadrature GPS Receiver Front-End in 0.13μm CMOS: The QLMV cell 1 Quadrature GPS Receiver Front-End in 0.13μm CMOS: The QLMV cell Yee-Huan Ng, Po-Chia Lai, and Jia Ruan Abstract This paper presents a GPS receiver front end design that is based on the single-stage quadrature

More information

A 2.4GHz Fully Integrated CMOS Power Amplifier Using Capacitive Cross-Coupling

A 2.4GHz Fully Integrated CMOS Power Amplifier Using Capacitive Cross-Coupling A 2.4GHz Fully Integrated CMOS Power Amplifier Using Capacitive Cross-Coupling JeeYoung Hong, Daisuke Imanishi, Kenichi Okada, and Akira Tokyo Institute of Technology, Japan Contents 1 Introduction PA

More information

An Asymmetrical Bulk CMOS Switch for 2.4 GHz Application

An Asymmetrical Bulk CMOS Switch for 2.4 GHz Application Progress In Electromagnetics Research Letters, Vol. 66, 99 104, 2017 An Asymmetrical Bulk CMOS Switch for 2.4 GHz Application Lang Chen 1, * and Ye-Bing Gan 1, 2 Abstract A novel asymmetrical single-pole

More information

30% PAE W-band InP Power Amplifiers using Sub-quarter-wavelength Baluns for Series-connected Power-combining

30% PAE W-band InP Power Amplifiers using Sub-quarter-wavelength Baluns for Series-connected Power-combining 2013 IEEE Compound Semiconductor IC Symposium, October 13-15, Monterey, C 30% PAE W-band InP Power Amplifiers using Sub-quarter-wavelength Baluns for Series-connected Power-combining 1 H.C. Park, 1 S.

More information

Noise Analysis for low-voltage low-power CMOS RF low noise amplifier. Mai M. Goda, Mohammed K. Salama, Ahmed M. Soliman

Noise Analysis for low-voltage low-power CMOS RF low noise amplifier. Mai M. Goda, Mohammed K. Salama, Ahmed M. Soliman International Journal of Scientific & Engineering Research, Volume 6, Issue 3, March-205 ISSN 2229-558 536 Noise Analysis for low-voltage low-power CMOS RF low noise amplifier Mai M. Goda, Mohammed K.

More information

Radio-Frequency Circuits Integration Using CMOS SOI 0.25µm Technology

Radio-Frequency Circuits Integration Using CMOS SOI 0.25µm Technology Radio-Frequency Circuits Integration Using CMOS SOI.5µm Technology Frederic Hameau and Olivier Rozeau CEA/LETI - 7, rue des Martyrs -F-3854 GRENOBLE FRANCE cedex 9 frederic.hameau@cea.fr olivier.rozeau@cea.fr

More information

A 2.4-Ghz Differential Low-noise Amplifiers using 0.18um CMOS Technology

A 2.4-Ghz Differential Low-noise Amplifiers using 0.18um CMOS Technology International Journal of Electronic and Electrical Engineering. ISSN 0974-2174, Volume 7, Number 3 (2014), pp. 207-212 International Research Publication House http://www.irphouse.com A 2.4-Ghz Differential

More information

DESIGN AND ANALYSIS OF RF LOW NOISE AND HIGH GAIN AMPLIFIER FOR WIRELESS COMMUNICATION

DESIGN AND ANALYSIS OF RF LOW NOISE AND HIGH GAIN AMPLIFIER FOR WIRELESS COMMUNICATION DESIGN AND ANALYSIS OF RF LOW NOISE AND HIGH GAIN AMPLIFIER FOR WIRELESS COMMUNICATION Parkavi N. 1 and Ravi T. 1 VLSI Design, Sathyabama University, Chennai, India Department of Electronics and Communication

More information

A 19-GHz Broadband Amplifier Using a g m -Boosted Cascode in 0.18-μm CMOS

A 19-GHz Broadband Amplifier Using a g m -Boosted Cascode in 0.18-μm CMOS A 19-GHz Broadband Amplifier Using a g m -Boosted Cascode in 0.18-μm CMOS Masum Hossain & Anthony Chan Carusone Electrical & Computer Engineering University of Toronto Outline Applications g m -Boosting

More information

Design and Simulation Study of Active Balun Circuits for WiMAX Applications

Design and Simulation Study of Active Balun Circuits for WiMAX Applications Design and Simulation Study of Circuits for WiMAX Applications Frederick Ray I. Gomez 1,2,*, John Richard E. Hizon 2 and Maria Theresa G. De Leon 2 1 New Product Introduction Department, Back-End Manufacturing

More information

An RF-Powered Temperature Sensor Designed for Biomedical Applications

An RF-Powered Temperature Sensor Designed for Biomedical Applications An RF-Powered Temperature Sensor Designed for Biomedical Applications Gustavo Campos Martins, Fernando Rangel de Sousa GRF, UFSC September 4, 2013 Gustavo C. Martins (GRF, UFSC) RF-Powered Temperature

More information

Methodology for Simultaneous Noise and Impedance Matching in W-band LNAs

Methodology for Simultaneous Noise and Impedance Matching in W-band LNAs Methodology for Simultaneous Noise and Impedance Matching in W-band LNAs Sean T. Nicolson and Sorin Voinigescu University of Toronto sorinv@eecg.toronto.edu CSICS-006, San Antonio, November 15, 006 1 Outline

More information

A Low Power Integrated UWB Transceiver with Solar Energy Harvesting for Wireless Image Sensor Networks

A Low Power Integrated UWB Transceiver with Solar Energy Harvesting for Wireless Image Sensor Networks A Low Power Integrated UWB Transceiver with Solar Energy Harvesting for Wireless Image Sensor Networks Minjoo Yoo / Jaehyuk Choi / Ming hao Wang April. 13 th. 2009 Contents Introduction Circuit Description

More information

Design of Wideband Low Noise Amplifier using Negative Feedback Topology for Motorola Application

Design of Wideband Low Noise Amplifier using Negative Feedback Topology for Motorola Application Design of Wideband Low Noise Amplifier using Negative Feedback Topology for Motorola Application Design of Wideband Low Noise Amplifier using Negative Feedback Topology for Motorola Application A. Salleh,

More information

2.Circuits Design 2.1 Proposed balun LNA topology

2.Circuits Design 2.1 Proposed balun LNA topology 3rd International Conference on Multimedia Technology(ICMT 013) Design of 500MHz Wideband RF Front-end Zhengqing Liu, Zhiqun Li + Institute of RF- & OE-ICs, Southeast University, Nanjing, 10096; School

More information

Cascode Current Mirror for a Variable Gain Stage in a 1.8 GHz Low Noise Amplifier (LNA)

Cascode Current Mirror for a Variable Gain Stage in a 1.8 GHz Low Noise Amplifier (LNA) Cascode Current Mirror for a Variable Gain Stage in a 1.8 GHz Low Noise Amplifier (LNA) 47 Cascode Current Mirror for a Variable Gain Stage in a 1.8 GHz Low Noise Amplifier (LNA) Lini Lee 1, Roslina Mohd

More information

Analysis and design of a V-band low-noise amplifier in 90 nm CMOS for 60 GHz applications

Analysis and design of a V-band low-noise amplifier in 90 nm CMOS for 60 GHz applications LETTER IEICE Electronics Express, Vol.12, No.1, 1 10 Analysis and design of a V-band low-noise amplifier in 90 nm CMOS for 60 GHz applications Zhenxing Yu 1a), Jun Feng 1, Yu Guo 2, and Zhiqun Li 1 1 Institute

More information

CMOS LNA Design for Ultra Wide Band - Review

CMOS LNA Design for Ultra Wide Band - Review International Journal of Innovation and Scientific Research ISSN 235-804 Vol. No. 2 Nov. 204, pp. 356-362 204 Innovative Space of Scientific Research Journals http://www.ijisr.issr-journals.org/ CMOS LNA

More information

International Journal of Pure and Applied Mathematics

International Journal of Pure and Applied Mathematics Volume 118 No. 0 018, 4187-4194 ISSN: 1314-3395 (on-line version) url: http://www.ijpam.eu ijpam.eu A 5- GHz CMOS Low Noise Amplifier with High gain and Low power using Pre-distortion technique A.Vidhya

More information

Design of an Inductor-Less LNA Using Resistive Feedback Topology for UWB Applications

Design of an Inductor-Less LNA Using Resistive Feedback Topology for UWB Applications Research Journal of Applied Sciences, Engineering and Technology 5(6): 2196-2202, 2013 ISSN: 2040-7459; e-issn: 2040-7467 Maxwell Scientific Organization, 2013 Submitted: August 07, 2012 Accepted: September

More information

High Voltage Operational Amplifiers in SOI Technology

High Voltage Operational Amplifiers in SOI Technology High Voltage Operational Amplifiers in SOI Technology Kishore Penmetsa, Kenneth V. Noren, Herbert L. Hess and Kevin M. Buck Department of Electrical Engineering, University of Idaho Abstract This paper

More information

A Transformer Feedback CMOS LNA for UWB Application

A Transformer Feedback CMOS LNA for UWB Application JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.16, NO.6, DECEMBER, 16 ISSN(Print) 1598-1657 https://doi.org/1.5573/jsts.16.16.6.754 ISSN(Online) 33-4866 A Transformer Feedback CMOS LNA for UWB Application

More information

CIRF Circuit Intégré Radio Fréquence. Low Noise Amplifier. Delaram Haghighitalab Hassan Aboushady Université Paris VI

CIRF Circuit Intégré Radio Fréquence. Low Noise Amplifier. Delaram Haghighitalab Hassan Aboushady Université Paris VI CIRF Circuit Intégré Radio Fréquence Low Noise Amplifier Delaram Haghighitalab Hassan Aboushady Université Paris VI Multidisciplinarity of radio design H. Aboushady University of Paris VI References M.

More information

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic MGA-853.1 GHz 3 V, 17 dbm Amplifier Data Sheet Description Avago s MGA-853 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to

More information

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback

Highly Linear Wideband LNA Design Using Inductive Shunt Feedback http://dx.doi.org/0.5573/jsts.04.4..00 JOURNA OF SEMICONDUCTOR TECHNOOGY AND SCIENCE, VO.4, NO., FEBRUARY, 04 Highly inear Wideband NA Design Using Inductive Shunt Feedback Nam Hwi Jeong, Choon Sik Cho,

More information

High IP3 Low-Noise Amplifier

High IP3 Low-Noise Amplifier EVALUATION KIT AVAILABLE General Description The low-cost, high third-order intercept point (IP3) low-noise amplifier (LNA) is designed for applications in 2.4GHz WLAN, ISM, and Bluetooth radio systems.

More information

Chapter 6. Case Study: 2.4-GHz Direct Conversion Receiver. 6.1 Receiver Front-End Design

Chapter 6. Case Study: 2.4-GHz Direct Conversion Receiver. 6.1 Receiver Front-End Design Chapter 6 Case Study: 2.4-GHz Direct Conversion Receiver The chapter presents a 0.25-µm CMOS receiver front-end designed for 2.4-GHz direct conversion RF transceiver and demonstrates the necessity and

More information

MGA Low Noise Amplifier. Data Sheet. 42x. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic

MGA Low Noise Amplifier. Data Sheet. 42x. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic MGA-243 Low Noise Amplifier Data Sheet Description Avago Technologies MGA-243 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for use in LNA and driver stages. While

More information

CIRF Circuit Intégré Radio Fréquence Low Noise Amplifier. Hassan Aboushady Université Paris VI

CIRF Circuit Intégré Radio Fréquence Low Noise Amplifier. Hassan Aboushady Université Paris VI CIRF Circuit Intégré Radio Fréquence Low Noise Amplifier Hassan Aboushady Université Paris VI Multidisciplinarity of radio design H. Aboushady University of Paris VI References M. Perrott, High Speed Communication

More information

A 2.4 GHZ RECEIVER IN SILICON-ON-SAPPHIRE MICHAEL PETERS. B.S., Kansas State University, 2009 A REPORT

A 2.4 GHZ RECEIVER IN SILICON-ON-SAPPHIRE MICHAEL PETERS. B.S., Kansas State University, 2009 A REPORT A 2.4 GHZ RECEIVER IN SILICON-ON-SAPPHIRE by MICHAEL PETERS B.S., Kansas State University, 2009 A REPORT submitted in partial fulfillment of the requirements for the degree MASTER OF SCIENCE Department

More information

Wide-Band Two-Stage GaAs LNA for Radio Astronomy

Wide-Band Two-Stage GaAs LNA for Radio Astronomy Progress In Electromagnetics Research C, Vol. 56, 119 124, 215 Wide-Band Two-Stage GaAs LNA for Radio Astronomy Jim Kulyk 1,GeWu 2, Leonid Belostotski 2, *, and James W. Haslett 2 Abstract This paper presents

More information

Rail-To-Rail Output Op-Amp Design with Negative Miller Capacitance Compensation

Rail-To-Rail Output Op-Amp Design with Negative Miller Capacitance Compensation Rail-To-Rail Op-Amp Design with Negative Miller Capacitance Compensation Muhaned Zaidi, Ian Grout, Abu Khari bin A ain Abstract In this paper, a two-stage op-amp design is considered using both Miller

More information

Data Sheet. MGA GHz 3 V, 14 dbm Amplifier. Description. Features. Applications. Simplified Schematic

Data Sheet. MGA GHz 3 V, 14 dbm Amplifier. Description. Features. Applications. Simplified Schematic MGA-8153.1 GHz 3 V, 1 dbm Amplifier Data Sheet Description Avago s MGA-8153 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to

More information

Microelectronics Journal

Microelectronics Journal Microelectronics Journal 44 (2013) 821-826 Contents lists available at ScienceDirect Microelectronics Journal journal homepage: www.elsevier.com/locate/mejo Design of low power CMOS ultra wide band low

More information

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet

MGA GHz 3 V, 17 dbm Amplifier. Data Sheet MGA-853.1 GHz 3 V, 17 dbm Amplifier Data Sheet Description Avago s MGA-853 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to

More information

Bluetooth Receiver. Ryan Rogel, Kevin Owen I. INTRODUCTION

Bluetooth Receiver. Ryan Rogel, Kevin Owen I. INTRODUCTION 1 Bluetooth Receiver Ryan Rogel, Kevin Owen Abstract A Bluetooth radio front end is developed and each block is characterized. Bits are generated in MATLAB, GFSK endcoded, and used as the input to this

More information

Design and power optimization of CMOS RF blocks operating in the moderate inversion region

Design and power optimization of CMOS RF blocks operating in the moderate inversion region Design and power optimization of CMOS RF blocks operating in the moderate inversion region Leonardo Barboni, Rafaella Fiorelli, Fernando Silveira Instituto de Ingeniería Eléctrica Facultad de Ingeniería

More information

Hot Topics and Cool Ideas in Scaled CMOS Analog Design

Hot Topics and Cool Ideas in Scaled CMOS Analog Design Engineering Insights 2006 Hot Topics and Cool Ideas in Scaled CMOS Analog Design C. Patrick Yue ECE, UCSB October 27, 2006 Slide 1 Our Research Focus High-speed analog and RF circuits Device modeling,

More information

Performance Analysis of a Low Power Low Noise 4 13 GHz Ultra Wideband LNA

Performance Analysis of a Low Power Low Noise 4 13 GHz Ultra Wideband LNA Performance Analysis of a Low Power Low Noise 4 13 GHz Ultra Wideband LNA J.Manjula #1, Dr.S.Malarvizhi #2 # ECE Department, SRM University, Kattangulathur, Tamil Nadu, India-603203 1 jmanjulathiyagu@gmail.com

More information

Above 200 GHz On-Chip CMOS Frequency Generation, Transmission and Receiving

Above 200 GHz On-Chip CMOS Frequency Generation, Transmission and Receiving Above 200 GHz On-Chip CMOS Frequency Generation, Transmission and Receiving Bassam Khamaisi and Eran Socher Department of Physical Electronics Faculty of Engineering Tel-Aviv University Outline Background

More information

A 3.5 GHz Low Noise, High Gain Narrow Band Differential Low Noise Amplifier Design for Wi-MAX Applications

A 3.5 GHz Low Noise, High Gain Narrow Band Differential Low Noise Amplifier Design for Wi-MAX Applications International Journal of Electronics Engineering Research. ISSN 0975-6450 Volume 9, Number 4 (2017) pp. 505-516 Research India Publications http://www.ripublication.com A 3.5 GHz Low Noise, High Gain Narrow

More information

A High Gain and Improved Linearity 5.7GHz CMOS LNA with Inductive Source Degeneration Topology

A High Gain and Improved Linearity 5.7GHz CMOS LNA with Inductive Source Degeneration Topology A High Gain and Improved Linearity 5.7GHz CMOS LNA with Inductive Source Degeneration Topology Ch. Anandini 1, Ram Kumar 2, F. A. Talukdar 3 1,2,3 Department of Electronics & Communication Engineering,

More information

DESCRIPTIO FEATURES APPLICATIO S. LT GHz to 2.7GHz Receiver Front End TYPICAL APPLICATIO

DESCRIPTIO FEATURES APPLICATIO S. LT GHz to 2.7GHz Receiver Front End TYPICAL APPLICATIO 1.GHz to 2.GHz Receiver Front End FEATURES 1.V to 5.25V Supply Dual LNA Gain Setting: +13.5dB/ db at Double-Balanced Mixer Internal LO Buffer LNA Input Internally Matched Low Supply Current: 23mA Low Shutdown

More information

Design of LNA and MIXER for CMOS Receiver Front ends

Design of LNA and MIXER for CMOS Receiver Front ends Design of LNA and MIXER for CMOS Receiver Front ends R.K.Sreelakshmi and D.Sharath Babu Rao 2 PG Scholar, Dept of ECE (VLSI&ES), GPREC (Autonomous), JNTUA, Kurnool, AP, India. 2 Assistant Professor, Dept

More information

A 5 GHz CMOS Low Power Down-conversion Mixer for Wireless LAN Applications

A 5 GHz CMOS Low Power Down-conversion Mixer for Wireless LAN Applications Proceedings of the 5th WSEAS Int. Conf. on CIRCUITS, SYSTES, ELECTRONICS, CONTROL & SIGNAL PROCESSING, Dallas, USA, November 1-, 2006 26 A 5 GHz COS Low Power Down-conversion ixer for Wireless LAN Applications

More information

Design of low-loss 60 GHz integrated antenna switch in 65 nm CMOS

Design of low-loss 60 GHz integrated antenna switch in 65 nm CMOS LETTER IEICE Electronics Express, Vol.15, No.7, 1 10 Design of low-loss 60 GHz integrated antenna switch in 65 nm CMOS Korkut Kaan Tokgoz a), Seitaro Kawai, Kenichi Okada, and Akira Matsuzawa Department

More information

A 3 5 GHz CMOS High Linearity Ultra Wideband Low Noise Amplifier in 0.18µ CMOS

A 3 5 GHz CMOS High Linearity Ultra Wideband Low Noise Amplifier in 0.18µ CMOS Proceedings of the 5th WSEAS Int. Conf. on CIRCUITS, SYSTEMS, ELECTRONICS, CONTROL & SIGNAL PROCESSING, Dallas, USA, November -, 6 5 A 5 GHz CMOS High Linearity Ultra Wideband Low Noise Amplifier in.8µ

More information

Design of a CMOS Distributed Power Amplifier with Gradual Changed Gain Cells

Design of a CMOS Distributed Power Amplifier with Gradual Changed Gain Cells Chinese Journal of Electronics Vol.27, No.6, Nov. 2018 Design of a CMOS Distributed Power Amplifier with Gradual Changed Gain Cells ZHANG Ying 1,2,LIZeyou 1,2, YANG Hua 1,2,GENGXiao 1,2 and ZHANG Yi 1,2

More information

A Low Power 900MHz Superheterodyne Compressive Sensing Receiver for Sparse Frequency Signal Detection

A Low Power 900MHz Superheterodyne Compressive Sensing Receiver for Sparse Frequency Signal Detection A Low Power 900MHz Superheterodyne Compressive Sensing Receiver for Sparse Frequency Signal Detection Hamid Nejati and Mahmood Barangi 4/14/2010 Outline Introduction System level block diagram Compressive

More information

Quiz2: Mixer and VCO Design

Quiz2: Mixer and VCO Design Quiz2: Mixer and VCO Design Fei Sun and Hao Zhong 1 Question1 - Mixer Design 1.1 Design Criteria According to the specifications described in the problem, we can get the design criteria for mixer design:

More information

Research Article CMOS Ultra-Wideband Low Noise Amplifier Design

Research Article CMOS Ultra-Wideband Low Noise Amplifier Design Microwave Science and Technology Volume 23 Article ID 32846 6 pages http://dx.doi.org/.55/23/32846 Research Article CMOS Ultra-Wideband Low Noise Amplifier Design K. Yousef H. Jia 2 R. Pokharel 3 A. Allam

More information

MGA Low Noise Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic

MGA Low Noise Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic MGA-243 Low Noise Amplifier Data Sheet Description Avago Technologies MGA-243 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for use in LNA and driver stages. While

More information

Application Note 1299

Application Note 1299 A Low Noise High Intercept Point Amplifier for 9 MHz Applications using ATF-54143 PHEMT Application Note 1299 1. Introduction The Avago Technologies ATF-54143 is a low noise enhancement mode PHEMT designed

More information

Application Note No. 027

Application Note No. 027 Application Note, Rev. 2.0, Jan. 2007 Application Note No. 027 Using the BGA420 Si MMIC Amplifier for Various UHF Applications from 300 MHz to 2.5 GHz RF & Protection Devices Edition 2007-01-11 Published

More information

Reconfigurable and Simultaneous Dual Band Galileo/GPS Front-end Receiver in 0.13µm RFCMOS

Reconfigurable and Simultaneous Dual Band Galileo/GPS Front-end Receiver in 0.13µm RFCMOS Reconfigurable and Simultaneous Dual Band Galileo/GPS Front-end Receiver in 0.13µm RFCMOS A. Pizzarulli 1, G. Montagna 2, M. Pini 3, S. Salerno 4, N.Lofu 2 and G. Sensalari 1 (1) Fondazione Torino Wireless,

More information

Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND 1 4 V CC

Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking GND 1 4 V CC GHz Low Noise Silicon MMIC Amplifier Technical Data INA-63 Features Ultra-Miniature Package Internally Biased, Single 5 V Supply (12 ma) db Gain 3 db NF Unconditionally Stable Applications Amplifier for

More information

Research Article Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation

Research Article Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation e Scientific World Journal, Article ID 163414, 5 pages http://dx.doi.org/10.1155/2014/163414 Research Article Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation Gim Heng Tan,

More information

On-Wafer Noise Parameter Measurements using Cold-Noise Source and Automatic Receiver Calibration

On-Wafer Noise Parameter Measurements using Cold-Noise Source and Automatic Receiver Calibration Focus Microwaves Inc. 970 Montee de Liesse, Suite 308 Ville St.Laurent, Quebec, Canada, H4T-1W7 Tel: +1-514-335-67, Fax: +1-514-335-687 E-mail: info@focus-microwaves.com Website: http://www.focus-microwaves.com

More information

THE INTERNATIONAL JOURNAL OF SCIENCE & TECHNOLEDGE

THE INTERNATIONAL JOURNAL OF SCIENCE & TECHNOLEDGE THE INTERNATIONAL JOURNAL OF SCIENCE & TECHNOLEDGE Topology Comparison and Design of Low Noise Amplifier for Enhanced Gain Arul Thilagavathi M. PG Student, Department of ECE, Dr. Sivanthi Aditanar College

More information