WESTCODE. An IXYS Company. Date:- 3 Jan, Data Sheet Issue:- A1. Provisional Data High Power Sonic FRD Type E0460QC45C. Absolute Maximum Ratings

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1 WESTCODE An IXYS Company Date:- 3 Jan, 2012 Data Sheet Issue:- A1 Absolute Maximum Ratings Provisional Data High Power Sonic FRD Type VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse voltage, (note 1) 4500 V V RSM Non-repetitive peak reverse voltage, (note 1) 4800 V V R(d.c.) Maximum reverse d.c. voltage (note 1) 3000 V UNITS OTHER RATINGS (note 6) MAXIMUM LIMITS I F(AV)M Mean forward current, T sink =55 C, (note 2) 532 A I F(AV)M Mean forward current. T sink =100 C, (note 2) 356 A I F(AV)M Mean forward current. T sink =100 C, (note 3) 224 A I F(RMS) Nominal RMS forward current, T sink =25 C, (note 2) 986 A I F(d.c.) D.C. forward current, T sink =25 C, (note 4) 888 A I FSM Peak non-repetitive surge t p =10ms, V RM =60%V RRM, (note 5) 5750 A I FSM2 Peak non-repetitive surge t p =10ms, V RM 10V, (note 5) 6320 A I 2 t I 2 t capacity for fusing t p =10ms, V RM =60%V RRM, (note 5) A 2 s I 2 t I 2 t capacity for fusing t p =10ms, V RM 10V, (note 5) A 2 s UNITS P rr Maximum peak reverse recovery power, (note 7) 1.8 MW T j op Operating temperature range -40 to +150 C T stg Storage temperature range -40 to +150 C Notes:- 1) De-rating factor of 0.13% per C is applicable for T j below 25 C. 2) Double side cooled, single phase; 50Hz, 180 half-sinewave. 3) Single side cooled, single phase; 50Hz, 180 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 150 C T j initial. 6) Current (I F ) ratings have been calculated using V T0 and r T (see page 2) 7) T j =T jop, I F =, di/dt=1/µs V r =2800V and L s =200nH. Test circuit and sample waveform are shown in diagram 1. IGBT type T0510VB45E used as switch. Provisional Data Sheet. Type Page 1 of 11

2 High Power Sonic FRD Type Characteristics V FM PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS I FM = Maximum peak forward voltage V I FM = V T0 Threshold voltage V Current range 532A- 1596A (Note 2) r T Slope resistance mω V T01 Threshold voltage V Current range 1 r T1 Slope resistance mω V FRM I RRM Maximum forward recovery voltage di/dt = 3000A/µs di/dt = 3000A/µs, T j =25 C V Peak reverse current Rated V RRM Rated V RRM, T j =25 C ma Q rr Recovered charge µc Q ra Recovered charge, 50% Chord I FM =, t p =1ms, di/dt=1/µs, µc V r =2800V, 50% and L s =200nH. IGBT type I rm Reverse recovery current T0510VB45E used as switch. (note 3) A t rr Reverse recovery time, 50% Chord µs R thjk Thermal resistance, junction to heatsink Double side cooled K/W Single side cooled K/W F Mounting force (Note 4) kn W t Weight g Notes:- 1) Unless otherwise indicated T j =150 C. 2) V T0 and r T were used to calculate the current ratings illustrated on page one. 3) Figures 3-7 were compiled using these conditions. Test circuit and sample waveform are shown in diagram 1. 4) For clamp forces outside these limits, please consult factory. Provisional Data Sheet. Type Page 2 of 11

3 High Power Sonic FRD Type Additional information on Ratings and Characteristics 1.0 De-rating Factor A blocking voltage de-rating factor of 0.13% per C is applicable to this device for T j below 25 C. 2.0 Reverse recovery ratings Diagram 1 Reverse Recovery test circuit and sample waveform L S I G D.U.T (i) Q ra is based on 50% I rm chord as shown in Figure below. (ii) Q rr is based on a 150µs integration time. I.e. (iii) 3.0 Reverse Recovery Loss Q rr = 150µ s 0 i rr. dt K Factor = t t 1 2 The following procedure is recommended for use where it is necessary to include reverse recovery loss. From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated from: T SINK = T E [ k + f R ] J ( MAX ) th( J Hs) Provisional Data Sheet. Type Page 3 of 11

4 High Power Sonic FRD Type Where k = ( C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = Rated frequency in Hz at the original sink temperature. R th(j-hs) = d.c. thermal resistance ( C/W) The total dissipation is now given by: W ( tot ) = W( original ) + E f NOTE 1 - Reverse Recovery Loss by Measurement This device has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that: (a) AC coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal. (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R 2 Vr = 4 C di s dt Where: V r = Commutating source voltage C S = Snubber capacitance R = Snubber resistance 4.0 Computer Modelling Parameters 4.1 Device Dissipation Calculations I AV 2 VT 0 + VT 0 + = 2 2 ff 4 ff r T 2 r T W AV Where V T0 = 2.15V, r T = 3.04mΩ ff = form factor (normally unity for fast diode applications) W AV T = R T = T th j( MAX ) T K 4.2 Calculation of V F using ABCD Coefficients Provisional Data Sheet. Type Page 4 of 11

5 High Power Sonic FRD Type The forward characteristic I F Vs V F, on page 6 is represented in two ways; (i) the well established V T0 and r T tangent used for rating purposes and (ii) a set of constants A, B, C, and D forming the coefficients of the representative equation for V F in terms of I F given below: V F = A + B ln( I ) + C I F F + D I F The constants, derived by curve fitting software, are given in this report for both hot and cold characteristics. The resulting values for V F agree with the true device characteristic over a current range, which is limited to that plotted. 25 C Coefficients 150 C Coefficients A B C D Provisional Data Sheet. Type Page 5 of 11

6 High Power Sonic FRD Type Curves Figure 1 Forward characteristics of limit device Figure 2 Maximum forward recovery voltage C 25 C 150 C 25 C Instantaneous forward current - I FM (A) Maximum forward recovery voltage - V FRM (V) Maximum instantaneous forward voltage - V FM (V) Rate of rise of forward current - di/dt (A/µs) Figure 3 - Recovered charge, Q rr Figure 4 - Recovered charge, Q ra (50% chord) 0 V r = 2800V V r = 2800V Total recovered charge - Q rr (µc) 300A Recovered charge - Q ra, 50% chord (µc) A Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) Provisional Data Sheet. Type Page 6 of 11

7 High Power Sonic FRD Type Figure 5 - Maximum reverse current, I rm Figure 6 Maximum recovery time, t rr (50% chord) V r = 2800V 10 V r = 2800V Reverse recovery current - I rm (A) 300A Recovery time - t rr, 50% chord (µs) 1 300A Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) Figure 7 Reverse recovery energy per pulse Figure 8 Sine wave energy per pulse 10.0 V r = 2800V Measured without snubber E0450QC45C Energy per pulse - E r (J) A Energy per pulse (J) 1.00E E Commutation rate - di/dt (A/µs) 1.00E-02 Provisional Data Sheet. Type Page 7 of 11

8 Figure 9 - Sine wave frequency vs. pulse width High Power Sonic FRD Type Figure 10 Sine wave frequency vs. pulse width T K = 55 C T K = 85 C 1 1 Figure 11 - Square wave energy per puls Figure 12 Square wave energy per pulse di/dt =100A/µs E0450QC45C di/dt =/µs 1 Energy per pulse (J) 1.00E+00 1 Energy per pulse (J) 1.00E E E E-01 Provisional Data Sheet. Type Page 8 of 11

9 Figure 13 - Square wave frequency vs pulse width High Power Sonic FRD Type Figure 14 Square wave frequency vs pulse width di/dt =100A/µs T K =55 C di/dt =100A/µs T K = 85 C 1 1 Figure 15 - Square wave frequency vs pulse width Figure 16 Square wave frequency vs pulse width di/dt =/µs T K = 55 C di/dt =/µs T K = 85 C 1 1 Provisional Data Sheet. Type Page 9 of 11

10 High Power Sonic FRD Type Figure 17 Safe operating area Figure 18 Transient thermal impedance 1200 Tj = 150 C di/dt = 1/µs L S < 200nH SSC 0.058K/W Reverse recovery current - I r (A) Thermal impedance (K/W) DSC 0.029K/W Reverse recovery voltage - V r (V) E Time (s) Figure 19 Maximum surge and I 2 t ratings Total peak half sine surge current - I FSM (A) 00 0 T j (initial) = 150 C I 2 t: V RRM 10V I 2 t: V R =60% V RRM I FSM : V RRM 10V 1.00E E+06 Maximum I 2 t (A 2 s) I FSM : V R =60% V RRM Duration of surge (ms) Duration of surge 50Hz) Provisional Data Sheet. Type Page 10 of 11

11 High Power Sonic FRD Type Outline Drawing & Ordering Information 100A367 ORDERING INFORMATION (Please quote 10 digit code as below) E0460 QC 45 C Fixed Type Code Fixed outline code Order code: 4500V V RRM, 26mm clamp height capsule. Fixed voltage code V RRM / Fixed code, product series IXYS Semiconductor GmbH Edisonstraße 15 D Lampertheim Tel: Fax: marcom@ixys.de WESTCODE An IXYS Company Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0) Fax: +44 (0) WSL.sales@westcode,com IXYS Corporation 1590 Buckeye Drive Milpitas CA Tel: +1 (408) Fax: +1 (408) sales@ixys.net IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA Tel: +1 (562) Fax: +1 (562) The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Provisional Data Sheet. Type Page 11 of 11