Insulated Gate Bi-Polar Transistor Type T2400GB45E

Transcription

1 Date:- 27 Nov, 214 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V CES Collector emitter voltage 4 V V DC link Permanent DC voltage for 1 FIT failure rate. 28 V V GES Peak gate emitter voltage ±2 V UNITS RATINGS MAXIMUM LIMITS I C Continuous DC collector current, IGBT 24 A I CRM Repetitive peak collector current, t p =1ms, IGBT 48 A I ECO Maximum reverse emitter current, t p =1µs, (note 2 & 3) 24 A P MAX Maximum power dissipation, IGBT (note 2) 19 kw T j op Operating temperature range -4 to +12 C T stg Storage temperature range -4 to +12 C UNITS Notes: - 1) Unless otherwise indicated T j = 12ºC. 2) T sink = 2 C, double side cooled. 3) Maximum commutation loop inductance 2nH. 4) Half-sinewave, 12 C T j initial. Data Sheet Page 1 of 6 November, 214

2 Insulated Gate Bi-polar Transistor Type V CE(sat) Characteristics IGBT Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS UNITS Collector emitter saturation voltage I C = 24A, V GE = V, T j = 2 C V I C = 24A, V GE = V V V T Threshold voltage V Current range: 8A 24A r T Slope resistance mω V GE(TH) Gate threshold voltage V CE = V GE, I C = 2mA V I CES Collector emitter cut-off current 4 7 V CE = V CES, V GE = V ma I GES Gate leakage current - - ±3 V GE = ±2V µa C ies Input capacitance V CE = 2V, V GE = V, f = 1MHz nf t d(on) Turn-on delay time µs t r (V) Rise time I C =24A, V CE =28V, di/dt=4a/µs µs Q g(on) Turn-on gate charge V GE = ±V, L s =2nH µc E on Turn-on energy R g(on) = 2.2Ω, R g(off) =8.2Ω, J t d(off) Turn-off delay time Freewheel diode type E24TC4C at. µs t f (I) Fall time (Notes 3, 4 & ) µs Q g(off) Turn-off gate charge µc E off Turn-off energy J I SC Short circuit current V GE =+V, V CC =28V, V CEmax V CES, t p 1µs Thermal Characteristics PARAMETER MIN TYP MAX TEST CONDITIONS UNITS Double side cooled K/kW R thjk Thermal resistance junction to sink, IGBT Collector side cooled K/kW Emitter side cooled K/kW F Mounting force - 7 Note 2 kn W t Weight kg A Notes:- 1) Unless otherwise indicated. 2) Consult application note 28AN1 for detailed mounting requirements. 3) C GE is additional gate - emitter capacitance added to output of gate drive circuit. 4) E on integration time µs from 1% rising I G. ) E off integration time µs from 9% falling V GE. Data Sheet Page 2 of 6 November, 214

3 Insulated Gate Bi-polar Transistor Type Curves Figure 1 Typical collector-emitter saturation voltage characteristics Figure 2 Typical output characteristic 1 V GE =+V 6 T j =2 C 2 C 12 C V GE = 2V V GE = 17V V GE = V V GE = 13V V GE = 11V Collector to emitter saturation voltage - V CE(sat) (V) Collector to emitter saturation voltage - V CE(sat) (V) Figure 3 Typical output characteristic Figure 4 Typical turn-on delay time vs gate resistance 6 V CE =28V I C =24A Collector current - I c (A) V GE = 2V V GE = 17V V GE = V V GE = 13V V GE = 11V Turn-on delay time - t d(on) (µs) 1 I C =A Collector to emitter saturation voltage - V CE(sat) (V) Gate resistance - R G(on) (Ω) Data Sheet Page 3 of 6 November, 214

4 Insulated Gate Bi-polar Transistor Type Figure Typical turn-off delay time vs. gate resistance Figure 6 Typical turn-on energy vs. collector current V CE =28V I C =24A I C =A R G(on) =2.2Ω V CE =28V Turn-off delay time - t d(off) (µs) Turn-on energy per pulse - E (on) (J) 1 V CE =2V V CE =1V Gate resistance - R G(off) (Ω) Figure 7 Typical turn-on energy vs. di/dt Figure 8 Typical turn-off energy vs. collector current 4 V CE =28V R G(off) =8.2Ω V CE =28V Turn-on energy per pulse - E (on) (J) 3 2 Turn-on energy per pulse - E (off) (mj) 1 V CE =2V V CE =1V I C =24A 1 I C =A Commutation rate - di/dt (A/µs) Data Sheet Page 4 of 6 November, 214

5 Insulated Gate Bi-polar Transistor Type Figure 9 Turn-off energy vs voltage Figure 1 Safe operating area R G(off) =8.2Ω I C =24A 4 Maximum L s =2nH Non-repetitive I C =2A 1 Turn-off energy - E off (J) I C =A I C =1A 3 2 I C =8A Collector-emitter voltage - V CE (V) Collector-emitter voltage - V CE (V) Transient thermal impedance junction to sink (K/W) Emitter Collector Double Side Time (s) Data Sheet Page of 6 November, 214

6 Insulated Gate Bi-polar Transistor Type Outline Drawing & Ordering Information 11A39 ORDERING INFORMATION (Please quote 1 digit code as below) T24 GB 4 E Fixed type Code Fixed Outline Code Voltage Grade V CES /1 4 Typical order code: (V CES = 4V) Fixed format code IXYS Semiconductor GmbH Edisonstraße D Lampertheim Tel: Fax: marcom@ixys.de IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN 1GE. Tel: +44 () Fax: +44 () sales@ixysuk.com IXYS Corporation 9 Buckeye Drive Milpitas CA Tel: +1 (48) 47 9 Fax: +1 (48) sales@ixys.net IXYS Long Beach IXYS Long Beach, Inc 2 Mira Mar Ave, Long Beach CA 98 Tel: +1 (62) Fax: +1 (62) service@ixyslongbeach.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet Page 6 of 6 November, 214