Fiber Optics. Plastic Fiber Optic Phototransistor Detector Plastic Connector Housing SFH350 SFH350V
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1 Fiber Optics Plastic Fiber Optic Phototransistor Detector Plastic Connector Housing SFH350 Features 2.2 mm Aperture holds Standard 1000 Micron Plastic Fiber No Fiber Stripping Required Good Linearity Sensitive in visible and near IR Range Molded Microlens for Efficient Coupling Plastic Connector Housing Mounting Screw Attached to the Connector Interference Free Transmission from light-tight Housing Transmitter and Receiver can be flexibly positioned No Cross Talk Auto insertable and Wave solderable Supplied in Tubes Applications Household Electronics Power Electronics Optical Networks Medical Instruments Automotive Electronics Light Barriers Type SFH350 Ordering Code Q62702-P1033 Q62702-P0264 Data Sheet
2 Absolute Maximum Ratings Parameter Symbol Limit Values Unit min. max. Operating Temperature Range T OP C Storage Temperature Range T STG Soldering Temperature T S 260 (2 mm from case bottom, t 5s) Collector-Emitter Voltage V CE 50 V Collector Current I C 50 ma Collector Peak Current (t 10 s) I CP 100 Emitter-Bas Voltage V EB 7 V Reverse Voltage V R 30 Power Dissipation T A = 25 C P TOT 200 mw Thermal Resistance, Junction/Air R thja 375 K/W Data Sheet
3 Characteristics (T A = 25 C) Parameter Symbol Limit Values Unit min. typ. max. Maximum Photosensitivity Wavelength λ Smax 850 nm Photosensitivity Spectral Range (S = 10% S max ) λ Dark Current (V R = 20 V) I R 1 ( 10) na Capacitance (f = 1 MHz, without light) (V CE = 0 V) (V CB = 0 V) (V EB = 0 V) Rise and Fall Times of Photo Current (R L = 1 kω, V CE = 5 V, I C = 1.0 ma, λ = 959 nm) 10% to 90% 90% to 10% C CE C CB C EB t R 20 t F 20 Current Gain HFE 500 Collector Dark Current I CE0 2 ( 50) na (V CE = 5 V) Photo Current (V CE = 5 V, Φ IN = 10 µw coupled from the end of a plastic fiber, λ = 660 nm) I CE 0.8 ( 0.16) Temperature Coefficient HFE TC HFE 0.55 %/K Temperature Coefficient I CE TC I 0.34 λ = 560 to 660 nm Temperature Coefficient I CE 0.49 λ = 830 nm Temperature Coefficient I CE λ = 950 nm 0.66 pf µs ma Data Sheet
4 Data Sheet
5 Data Sheet
6 Package Outlines Package Outlines SFH350 Figure 1 Figure 2 (dimensions in mm, unless otherwise specified) Data Sheet
7 Revision History: DS0 Previous Version: Page Subjects (major changes since last revision) Document s layout has been changed: 2002-Aug. For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at Edition Published by Infineon Technologies AG, St.-Martin-Strasse 53, D München, Germany Infineon Technologies AG All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode. It is a small surface mount device (SMD) including the chip with a 0.85 mm 2 sensitive area and a daylight blocking
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
High Speed Infrared Emitting Diode, 85 nm, GaAlAs Double Hetero 94 839 DESCRIPTION is an infrared, 85 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded
Silicon PIN Photodiode, RoHS Compliant
DESCRIPTION 640- is a PIN photodiode with high speed and high radiant sensitivity in black, T-¾ plastic package with daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters.
BPW46L. Silicon PIN Photodiode. Vishay Semiconductors
Silicon PIN Photodiode Description BPW46L is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared