Single-Channel: 6N135M, 6N136M, HCPL4503M. Dual-Channel: HCPL2530M, HCPL2531M High Speed Transistor Optocouplers
|
|
- Joshua Snow
- 5 years ago
- Views:
Transcription
1 Dual-Channel:, HCPL253M (Preliminary) High Speed Transistor Optocouplers Features High speed MBit/s Superior CMR 0kV/µs Dual-Channel, HCPL253M (Preliminary) CTR guaranteed 0 70 C U.L. recognized (File # E90700, Vol. 2) VDE recognition (pending) Ordering option V, e.g., 6N35VM 5,000Vrms ( minute) isolation rating Superior CMR of 5,000V/µs min. () No base connection for improved noise immunity () Applications Line receivers Pulse transformer replacement Output interface to CMOS-LSTTL-TTL Wide bandwidth analog coupling Description January 200 The, 6N35M,, and HCPL253M optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor. A separate connection for the bias of the photodiode improves the speed by several orders of magnitude over conventional phototransistor optocouplers by reducing the base-collector capacitance of the input transistor. The has no internal connection to the phototransistor base for improved noise immunity. An internal noise shield provides superior common mode rejection of up to 50,000V/µs. Related Resources Schematics Package Outlines N/C V CC + V CC V F V B _ 2 7 V 0 V F _ 3 6 _ 3 6 V 02 V F2 N/C 4 5 GND GND 6N35M,, /HCPL253M Pin 7 is not connected in the 6N3XM, HCPLXXXM Rev..0.6
2 Absolute Maximum Ratings (T A = 25 C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Condition Value Units T STG Storage Temperature -40 to +25 C T OPR Operating Temperature -40 to +00 C T SOL Lead Solder Temperature (Wave) 260 for 0 sec C EMITTER I F (avg) I F (pk) I F (trans) V R P D DETECTOR I O (avg) DC/Average Forward Input 25 ma Current Each Channel () Peak Forward Input Current 50% duty cycle, ms P.W. 50 ma Each Channel (2) Peak Transient Input Current Each Channel Reverse Input Voltage Each Channel µs P.W., 300pps.0 A 5 V Input Power Dissipation Each 6N35M,, 45 mw Channel (3), HCPL253M Average Output Current Each Channel ma I O (pk) Peak Output Current Each 6 ma Channel V EBR Emitter-Base Reverse Voltage 6N35M and only 5 V V CC Supply Voltage -0.5 to 30 V Output Voltage -0.5 to 20 V I B Base Current 6N35M and only 5 ma PD Output Power Dissipation 6N35M,, 00 mw Each Channel (4), HCPL253M 35 mw Notes:. Derate linearly above 70 C free-air temperature at a rate of 0.mA/ C. 2. Derate linearly above 70 C free-air temperature at a rate of.6ma/ C. 3. Derate linearly above 70 C free-air temperature at a rate of 0.9 mw/ C. 4. Derate linearly above 70 C free-air temperature at a rate of 2.0 mw/ C. 6N3XM, HCPLXXXM Rev
3 Electrical Characteristics (T A = 0 to 70 C unless otherwise specified. Typical value is measured at T A = 25ºC and V CC = 5.0V.) Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit EMITTER V F Input Forward Voltage I F = 6mA, T A =25 C All.45.7 V I F = 6mA All. B VR Input Reverse Breakdown Voltage I R = 0 µa All V V F / T A DETECTOR I OH I CCL I CCH Temperature Coefficient of Forward Voltage Logic High Output Current Logic Low Supply Current Logic High Supply Current I F = 6mA All -.7 mv/ C I F = 0mA, = V CC = 5.5V, T A =25 C I F = 0mA, = V CC = 5V, T A =25 C All µa 6N35M I F = 0mA, = V CC = 5V All 50 I F = 6mA, = Open, V CC = 5V I F = I F2 = 6mA, = Open, V CC = 5V I F = 0mA, = Open, V CC = 5V, T A =25 C I F = 0mA, = Open, V CC = 5V I F = 0mA, = Open, V CC = 5V 6N35M HCPL253M 6N35M 6N35M HCPL253M µa µa N3XM, HCPLXXXM Rev
4 Electrical Characteristics (Continued) (T A = 0 to 70 C unless otherwise specified. Typical value is measured at T A = 25ºC and V CC = 5.0V.) Transfer Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit COUPLED CTR L Current Transfer I F = 6mA, = 0.4 V, Ratio (5) V CC = 4.5V, T A =25 C Logic LOW Output Voltage I F = 6mA, V CC = 4.5V I F = 6mA, I O =.ma, V CC = 4.5V, T A =25 C I F = 6mA, I O = 3mA, V CC = 4.5V, T A =25 C I F = 6mA, I O = 0.mA, V CC = 4.5V I F = 6mA, I O = 2.4mA, V CC = 4.5V 6N35M % % HCPL253M L = 0.4V 6N35M 5 % L = 0.5V L = 0.4V 5 % L = 0.5V HCPL253M 6N35M V HCPL253M 0.5 6N35M HCPL253M Note: 5. Current Transfer Ratio is defined as a ratio of output collector current, I O, to the forward LED input current, I F, times 00%. 6N3XM, HCPLXXXM Rev
5 Electrical Characteristics (Continued) (T A = 0 to 70 C unless otherwise specified. Typical values are measured at T A = 25 C and V CC = 5V.) Switching Characteristics (V CC = 5V) Symbol Parameter Test Conditions Device Min. Typ. Max. Unit t PHL t PLH CM H CM L Propagation Delay Time to Logic LOW Propagation Delay Time to Logic HIGH Common Mode Transient Immunity at Logic High Common Mode Transient Immunity at Logic Low T A = 25 C, R L = 4.kΩ, I F = 6mA (6) (Fig. 7) R L =.9kΩ, I F = 6mA, T A = 25 C (7) (Fig. 7) R L = 4.kΩ, I F = 6mA (6) (Fig. 7) R L =.9kΩ, I F = 6mA (7) (Fig. 7) T A = 25 C, (R L = 4.kΩ, I F = 6mA (6) (Fig. 7) R L =.9kΩ, I F = 6mA (7) (Fig. 7) T A = 25 C R L = 4.kΩ, I F = 6mA (6) (Fig. 7) R L =.9kΩ, I F = 6mA (7) (Fig. 7) I F = 0mA, V CM = 0V P-P, R L = 4.kΩ, T A = 25 C () (Fig. ) I F = 0mA, V CM = 0V P-P, R L =.9kΩ, T A = 25 C () (Fig. ) I F = 0mA, V CM =,500V P-P, R L =.9kΩ, T A = 25 C () (Fig. ) I F = 6mA, V CM = 0V P-P, R L = 4.kΩ, T A = 25 C () (Fig. ) I F = 6mA, V CM = 0V P-P, R L =.9kΩ () (Fig. ) I F = 0mA, V CM =,500V P-P, R L =.9kΩ, T A = 25 C () (Fig. ) 6N35M µs HCPL253M 6N35M HCPL253M µs 2.0 µs.0 µs 6N35M µs HCPL253M 6N35M HCPL253M 6N35M HCPL253M 5,000 50,000 6N35M HCPL253M 5,000 50, µs 2.0 µs.0 µs 0,000 V/µs 0,000 V/µs 0,000 V/µs 0,000 V/µs Notes: 6. The 4.kΩ load represents LSTTL unit load of 0.36mA and 6.kΩ pull-up resistor. 7. The.9kΩ load represents TTL unit load of.6ma and 5.6kΩ pull-up resistor.. Common mode transient immunity in logic high level is the maximum tolerable (positive) dv cm /dt on the leading edge of the common mode pulse signal V CM, to assure that the output will remain in a logic high state (i.e., > 2.0V). Common mode transient immunity in logic low level is the maximum tolerable (negative) dv cm /dt on the trailing edge of the common mode pulse signal, V CM, to assure that the output will remain in a logic low state (i.e., < 0.V). 6N3XM, HCPLXXXM Rev
6 Electrical Characteristics (Continued) (T A = 0 to 70 C unless otherwise specified. Typical values are measured at T A = 25 C and V CC = 5V.) Isolation Characteristics (T A = 0 to 70 C Unless otherwise specified) Symbol Characteristics Test Conditions Min. Typ. Max. Unit V ISO Withstand Insulation Test Voltage RH 50%, T A = 25 C, I I-O 0µA, 5,000 V RMS t = min., f = 50Hz (9)() R I-O Resistance (Input to Output) V I-O = 500VDC (9) 0 Ω C I-O Capacitance (Input to Output) f = MHz, V I-O = 0V (9) pf I I-I Input-Input Insulation RH 45%, V I-I = 500VDC (0) µa Leakage Current t = 5 s, (/253M only) R I-I Input-Input Resistance V I-I = 500 VDC (0) Ω (/253M only) C I-I Input-Input Capacitance f = MHz (0) (/253M only) pf Notes: 9. Device is considered a two terminal device: Pins, 2, 3 and 4 are shorted together and Pins 5, 6, 7 and are shorted together. 0. Measured between pins and 2 shorted together, and pins 3 and 4 shorted together.. 5,000Vrms for minute duration is equivalent to 6,000Vrms for second duration. 6N3XM, HCPLXXXM Rev
7 tp PROPAGATION DELAY (ns) I O OUTPUT CURRENT (ma) CTR (NORMALIZED) CTR(I F ) / CTR (I F = 6mA) CTR (NORMALIZED) CTR(T A ) / CTR (T A = 6mA) Typical Performance Curves Fig. Normalized CTR vs. Forward Current Normalized to: I F = 6 ma T A = 25 C V CC = 5 V I F - FORWARD CURRENT (ma) Fig. 3 Output Current vs. Output Voltage OUTPUT VOLTAGE (V) = 0.4 V V CC = 5 V T A = 25 C I F = 40mA 35mA 30mA 25mA 20mA 5mA 0mA 5mA IOH LOGIC HIGH OUTPUT CURRENT (na) Fig. 2 Normalized CTR vs. Temperature Normalized to: T A = 25 C I F = 0 ma V CC = 5.5V = 5.5V T A - TEMPERATURE ( C) Fig. 4 Logic High Output Current vs. Temperature I F = 6mA V CC = 4.5V = 0.4V T A TEMPERATURE ( C) Fig. 5 Propagation Delay vs. Temperature Fig. 6 Propagation Delay vs. Load Resistance Frequency = 0kHz Duty Cycle = 0% V CC = 5V R L = 4.kΩ (t PLH) R L =.9kΩ (t PLH) R L =.9kΩ (t PHL) R = 4.kΩ (t PHL) L TP - PROPAGATION DELAY (ns) 000 Frequency = 0kHz Duty Cycle = 0% V CC = 5 V IF = 6mA (t PLH) IF = 6mA (t PHL) IF = 0mA (t PLH) IF = 0mA (t PHL) T A TEMPERATURE ( C) 00 0 R L LOAD RESISTANCE (kω) 6N3XM, HCPLXXXM Rev
8 Test Circuits V FF Pulse Generator I tr = 5ns F Z O= 50 Ω 0% D.C. I/f < 00µs I Monitor F B A I F R m + V F - + V F - Noise Shield Noise Shield V CC V B VO 5 GND V CC V B V 6 O 5 GND R L 0. µf Test Circuit for 6N35M,, and R L 0. µf +5 V I F 0 +5 V C L = 5 pf T PHL Pulse Generator tr = 5ns Z O = 50 Ω 0% DUTY CYCLE I/f < 00µS.5 V IF IF MONITOR R m + VF VF2 VF - - VF V TPLH Fig. 7 Switching Time Test Circuit V FF I F A B Noise Shield L 5 V Noise Shield VCC V0 V02 GND Test Circuit for and HCPL253M GND RL CC V RL V0 7 6 V02 0. µf 0. µf +5 V C L = 5 pf +5 V + - V CM Pulse Gen V CM + - Pulse Gen Test Circuit for 6N35M,, and Test Circuit for and HCPL253M V CM 0 V 90% 90% 0% 0% 0 V t r t f Switch at A : I = 0 ma F 5 V Switch at A : I = 6 ma F L Fig. Common Mode Immunity Test Circuit 6N3XM, HCPLXXXM Rev..0.6
9 Package Dimensions SEATING PLANE Through Hole (5.0) MAX (0.56) 0.06 (0.4) (9.9) (9.40) 0.00 (2.54) TYP (6.6) (6.35) (.7) (.4) (0.5) MIN 0.56 (3.94) 0.44 (3.6) Surface Mount 0.3" Lead Spacing (Option S) 0.56 (3.94) 0.44 (3.6) (5.0) MAX (9.9) (9.40) PIN ID (3.90) 0.20 (3.05) 0.06 (0.40) 0.00 (0.20) PIN ID (6.6) (6.35) (.7) (.4) (0.56) 0.06 (0.4) 0.00 (2.54) TYP (0.5) MIN Note: All dimensions are in inches (millimeters) (7.62) TYP 0.05 (0.40) MIN Both Sides 0.35 (.00) MIN (0.30) MAX. 5 MAX (7.62) TYP 0.06 (0.40) 0.00 (0.20) 0.4" Lead Spacing (Option T) SEATING PLANE (5.0) MAX (0.56) 0.06 (0.4) 0.03 (0.7) (9.9) (9.40) 0.00 (2.54) TYP (6.6) (6.35) (.7) (.4) (0.5) MIN 0.56 (3.94) 0.44 (3.6) -Pin Surface Mount DIP Land Pattern (Option S) 0.45 (0.54) (7.49) PIN ID (3.90) 0.20 (3.05) 0.06 (0.40) 0.00 (0.20) 0.00 (2.54) (.7) 0 to (0.6) TYP (.52) (0.76) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: 6N3XM, HCPLXXXM Rev
10 Package Dimensions (Continued) Surface Mount 0.4" Lead Spacing (Option TS) (Pending) (3.94) 0.44 (3.6) (5.0) MAX (9.9) (9.40) (6.6) (6.35) (0.56) 0.06 (0.4) 0.00 (2.54) TYP PIN ID (.7) (.4) 0.03 (0.775) (0.5) MIN Note: All dimensions are in inches (millimeters) (7.62) TYP 0.05 (0.40) MIN Both Sides (0.6) (2.6) MAX (0.40) 0.00 (0.20) -Pin Surface Mount DIP Land Pattern (Option TS) 0.5 (3.0) (9.96) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: (2.54) (.7) (.52) (0.76) 6N3XM, HCPLXXXM Rev
11 Ordering Information Option Example Part Number Description No option 6N35M Standard through hole lead form (50 units per tube) S 6N35SM Surface mount lead bend SD 6N35SDM Surface mount; tape and reel V 6N35VM IEC (approval pending) TSV 6N35TSVM IEC (approval pending); surface mount TSDV 6N35TSDVM IEC (approval pending); surface mount; tape and reel TV 6N35TVM IEC (approval pending); 0.4" lead spacing SV 6N35SVM IEC (approval pending); surface mount SDV 6N35SDVM IEC (approval pending); surface mount; tape and reel Marking Information V XX N35 YY B 2 6 Definitions Fairchild logo 2 () Device number 3 IEC mark (Note: Only appears on parts ordered with this option See order entry table) 4 Two digit year code, e.g., 0 5 Two digit work week ranging from 0 to 53 6 Assembly package code Note:. HCPL devices are marked with only the numeric characters (for example, is marked as 4503 ). 2. The M suffix is an ordering identifier only. It is used to indicated the white package version. The M does no appear in the top mark. 6N3XM, HCPLXXXM Rev..0.6
12 Carrier Tape Specifications (Option SD) D 0 P 0 P2 t K E 0 F A 0 W W B 0 d User Direction of Feed P D Symbol Description Dimension in mm W Tape Width 6.0 ± 0.3 t Tape Thickness 0.30 ± 0.05 P 0 Sprocket Hole Pitch 4.0 ± 0. D 0 Sprocket Hole Diameter.55 ± 0.05 E Sprocket Hole Location.75 ± 0.0 F Pocket Location 7.5 ± 0. P ± 0. P Pocket Pitch 2.0 ± 0. A 0 Pocket Dimensions 0.30 ±0.20 B ±0.20 K ±0.20 W Cover Tape Width 3.2 ± 0.2 d Cover Tape Thickness 0. max Max. Component Rotation or Tilt 0 R Min. Bending Radius 30 6N3XM, HCPLXXXM Rev
13 Carrier Tape Specifications (Option TSR2) (Pending) D 0 P 0 P2 t K E 0 F A 0 W W B 0 d User Direction of Feed P D Symbol Description Dimension in mm W Tape Width 24.0 ± 0.3 t Tape Thickness 0.40 ± 0. P 0 Sprocket Hole Pitch 4.0 ± 0. D 0 Sprocket Hole Diameter.55 ± 0.05 E Sprocket Hole Location.75 ± 0.0 F Pocket Location.5 ± 0. P ± 0. P Pocket Pitch 6.0 ± 0. A 0 Pocket Dimensions 2.0 ± 0. B ± 0. K ±0. W Cover Tape Width 2.0 ± 0. d Cover Tape Thickness 0. max Max. Component Rotation or Tilt 0 R Min. Bending Radius 30 6N3XM, HCPLXXXM Rev
14 Reflow Profile Temperature ( C) TP TL Tsmax Tsmin Max. Ramp-up Rate = 3 C/S Max. Ramp-down Rate = 6 C/S Preheat Area 20 ts Time 25 C to Peak Time (seconds) tl tp Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 50 C Temperature Max. (Tsmax) 200 C Time (t S ) from (Tsmin to Tsmax) seconds Ramp-up Rate (t L to t P ) 3 C/second max. Liquidous Temperature (T L ) 27 C Time (t L ) Maintained Above (T L ) seconds Peak Body Package Temperature 260 C +0 C / 5 C Time (t P ) within 5 C of 260 C Ramp-down Rate (T P to T L ) Time 25 C to Peak Temperature 30 seconds 6 C/second max. minutes max. 6N3XM, HCPLXXXM Rev
15 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficientMax Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM OptoHiT OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT - SupreMOS SyncFET Sync-Lock * The Power Franchise TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical andproduct information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 6N3XM, HCPLXXXM Rev
Single-Channel: 6N135, 6N136, HCPL2503, HCPL4502 Dual-Channel: HCPL2530, HCPL2531 High Speed Transistor Optocouplers
Single-Channel:,,, Dual-Channel:, High Speed Transistor Optocouplers Features High speed MBit/s Superior CMR 0kV/µs Dual-Channel / Double working voltage 40V RMS CTR guaranteed 0 70 C U.L. recognized (File
More informationKSD1621 NPN Epitaxial Silicon Transistor
KSD62 NPN Epitaxial Silicon Transistor Features High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB2 Marking
More informationMOC70P1, MOC70P2, MOC70P3 Phototransistor Optical Interrupter Switch
MOC7P, MOC7P2, MOC7P3 Phototransistor Optical Interrupter Switch Features No contact sensing 5mm gap.4 aperture Low profile PCB mount Transistor output Package Dimensions.25 [6.35].53 [3.89] 2X C L.5 [2.95].56
More informationLL4148 Small Signal Diode
LL4148 Small Signal Diode Cathode Band COLOR BAND MARKING 1ST BAND Black April 2013 SOD80 The 1st Band indicates the cathode band Package Marking and Ordering Information Device Marking Device Package
More informationSingle-Channel: 6N135, 6N136, HCPL2503, HCPL4502 Dual-Channel: HCPL2530, HCPL2531 High Speed Transistor Optocouplers
SingleChannel:,,, DualChannel:, High Speed Transistor Optocouplers Features High speed MBit/s Superior CMR 0kV/µs DualChannel / Double working voltage 40V RMS CTR guaranteed 0 70 C U.L. recognized (File
More information2N7002W N-Channel Enhancement Mode Field Effect Transistor
2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface
More informationHCPL0700, HCPL0701, HCPL0730, HCPL0731 Low Input Current High Gain Split Darlington Optocouplers
April 009 HCPL0700, HCPL070, HCPL0730, HCPL073 Low Input Current High Gain Split Darlington Optocouplers Single Channel: HCPL0700, HCPL070, Dual Channel: HCPL0730, HCPL073 Features Low input current: 0.5mA
More informationBAT54HT1G Schottky Barrier Diodes
BAT54HT1G Schottky Barrier Diodes 1 A2 Connection Diagram 1 July 2013 SOD-323 2 2 Ordering Information Part Number Marking Package Packing Method BAT54HT1G A2 SOD-323 2L Tape and Reel Absolute Maximum
More information2N6517 NPN Epitaxial Silicon Transistor
2N657 NPN Epitaxial Silicon Transistor Features High oltage Transistor Collector Dissipation: P C (max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (. Emitter 2. Collector 3. Base) Absolute
More informationKSA473 PNP Epitaxial Silicon Transistor
KSA473 PNP Epitaxial Silicon Transistor Features Low Frequency Power Amplifier, Power Regulator Collector Current : = -3A Collector Dissipation : P C = 10W (T C =25 C) Complement to KSC1173 August 2009
More informationFJA13009 High-Voltage Switch Mode Application
FJA3009 High-Voltage Switch Mode Application Features High-Speed Switching Suitable for Switching Regulator and Motor Control Ordering Information July 203 Part Number Marking Package Packing Method FJA3009TU
More informationFJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor
FJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor Features 100 ma Output Current Capability Built-in Bias Resistor (R 1 = 22 kω, R 2 = 22 kω) Application Switching, Interface, and Driver Circuits
More informationMJD44H11 NPN Epitaxial Silicon Transistor
MJD44H11 NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application
More informationMOCD213M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
MOCD23M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers Features U.L. recognized (File #E90700, Volume 2) VDE recognized (File #3666) (add option V for VDE approval, i.e, MOCD23VM)
More informationJ309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier
J / J / MMBFJ / MMBFJ N-Channel RF Amplifier Features This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 db at 100 MHz and 12 db at 450 MHz
More informationJ105 / J106 / J107 N-Channel Switch
J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. September 2013 Ordering
More informationFJB102 NPN High-Voltage Power Darlington Transistor
FJB102 NPN High-Voltage Power Darlington Transistor Features High DC Current Gain : h FE = 0 at = 4 V, = 3 A (Minimum) Low Collector-Emitter Saturation Voltage 1 D 2 -PAK 1.Base 2.Collector 3.Emitter B
More informationBSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor
December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize
More informationFDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode
FDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode DO-35 Cathode is denoted with a black band Cathode Band LL-34 SOD80 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF
More informationPart Number Top Mark Package Packing Method
KSA3 PNP Epitaxial Silicon Transistor Features Color TV Audio Output Color TV Vertical Deflection Output September 203 TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package
More informationFGD V PDP Trench IGBT
FGD4536 360 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 1.59 V @ I C = 50 A High Input Impedance Fast Switching RoHS Compliant Applications PDP TV, Consumer Appliances
More informationBAV103 High Voltage, General Purpose Diode
BAV3 High Voltage, General Purpose Diode Cathode Band SOD80 Description April 2013 A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass
More informationHSR312, HSR312L, HSR412, HSR412L Photovoltaic Solid-State Relay Optocouplers
HSR32, HSR32L, HSR42, HSR42L Photovoltaic Solid-State Relay Optocouplers Features 4,000 VRMS Isolation Wide operating voltage range 250V (HSR32, HSR32L) 400V (HSR42, HSR42L) Solid-State Reliability Bounce-Free
More informationFODM452, FODM453 5-Pin Mini Flat Package High Speed Transistor Optocoupler
FODM452, FODM453 5-Pin Mini Flat Package High Speed Transistor Optocoupler Features Compact 5-pin mini flat package High speed- MBit/s Superior CMR-5kV/µs at V CM = 5V (FODM453) Performance guaranteed
More information1N4934-1N4937 Fast Rectifiers
N4934 - N4937 Fast Rectifiers Features Low Forward Voltage Drop High Surge Current Capability High Reliability High Current Capability DO-4 COLOR BAND DENOTES CATHODE January 25 N4934 - N4937 Fast Rectifiers
More information1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode DO-35 Cathode is denoted with a black band LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
More informationMID400 AC Line Monitor Logic-Out Device
MID400 AC Line Monitor Logic-Out Device Features Direct operation from any line voltage with the use of an external resistor. Externally adjustable time delay Externally adjustable AC voltage sensing level
More informationKSP2222A NPN General-Purpose Amplifier
KSP2222A NPN General-Purpose Amplifier Features Collector-Emitter Voltage: V CEO = 40 V Available as PN2222A November 2014 TO-92 1 2 3 1. Emitter 2. Base 3. Collector Ordering Information Part Number Marking
More informationFYP2010DN Schottky Barrier Rectifier
FYP20DN Schottky Barrier Rectifier Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection.anode August 2009 FYP20DN Schottky Barrier Rectifier
More informationFJP13007 High Voltage Fast-Switching NPN Power Transistor
FJP3007 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching
More informationFOD0708 Single Channel CMOS Optocoupler, FOD0738 Dual Channel CMOS Optocoupler
FOD00 Single Channel CMOS Optocoupler, FOD0 Dual Channel CMOS Optocoupler Features +V CMOS compatibility ns typical pulse width distortion 0ns max. pulse width distortion 0ns max. propagation delay skew
More informationFOD852 4-Pin High Operating Temperature Photodarlington Optocoupler
FOD852 4-Pin High Operating Temperature Photodarlington Optocoupler Features Applicable to Pb-free IR reflow soldering Compact 4-pin package High current transfer ratio: % minimum C-UL, UL, and VDE approved
More informationTIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor
TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor Features High-Voltage and Switching Applications High Sustaining Voltage: V CEO (sus) = 250 V, 300 V, 350 V, 400 V 1 A Rated Collector Current Ordering
More informationFJP13009 High-Voltage Fast-Switching NPN Power Transistor
FJP3009 High-Voltage Fast-Switching NPN Power Transistor Features High-Voltage Capability High Switching Speed Applications Electronic Ballast Switching Regulator Motor Control Switched Mode Power Supply
More informationKSC1815 NPN Epitaxial Silicon Transistor
KSC85 NPN Epitaxial Silicon Transistor Features Audio Frequency Amplifier & High Frequency OSC Complement to KSA5 Collector-Base Voltage: V CBO = 50 V TO-92 April 203. Emitter 2. Collector 3. Base Ordering
More informationTIP147T PNP Epitaxial Silicon Darlington Transistor
TIP147T PNP Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: h FE = 1000 at = -4 V, = -5 A (Minimum) Industrial
More informationFGD V, PDP IGBT
FGD4536 36V, PDP IGBT Features High Current Capability Low Saturation Voltage: V CE (sat) =.59 V @ I C = 5 A High Input Impedance Fast Switching RoHS Compliant Application PDP System General Description
More informationBAT54SWT1G / BAT54CWT1G Schottky Diodes
BAT54SWT1G / BAT54CWT1G Schottky Diodes SOT-2 1 2 MARKING BAT54SWT1G = YB BAT54CWT1G = YC November 2015 Connection Diagram BAT54SWT1G BAT54CWT1G 1 2 1 2 Ordering Information Part Number Top Mark Package
More informationQEC112, QEC113 Plastic Infrared Light Emitting Diode
QEC112, QEC113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS λ = 940nm Chip material = GaAs Package type: T-1 (3 mm) Can be used with QSCXXX Photosensor Narrow Emission Angle, 8 at 80%
More information2N6520 PNP Epitaxial Silicon Transistor
2N6520 PNP Epitaxial Silicon Transistor Features High oltage Transistor Collector-Emitter oltage: CBO = -350 Collector Dissipation: P C (max)=625mw Complement to 2N6517 Absolute Maximum Ratings* T A =
More informationBAV ma 70 V High Conductance Ultra-Fast Switching Diode
April 2014 BAV99 200 ma 70 V High Conductance Ultra-Fast Switching Diode Features High Conductance: I F = 200 ma Fast Switching Speed: t rr < 6 ns Maximum Small Plastic SOT-2 Package Series-Pair Configuration
More informationFJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor
FJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor Features 100 ma Output Current Capability Built-in Bias Resistor (R 1 = 4.7 kω, R 2 = 10 kω) Application Switching, Interface, and Driver Circuits
More informationBC638 PNP Epitaxial Silicon Transistor
BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base March 2009 Absolute Maximum Ratings T a = 25 C unless otherwise noted
More informationQEE113 Plastic Infrared Light Emitting Diode
QEE113 Plastic Infrared Light Emitting Diode Features λ = 940 nm Package Type = Sidelooker Chip Material = GaAs Matched Photosensor: QSE113 Medium Wide Emission Angle, 50 Package Material: Clear Epoxy
More informationKA431S / KA431SA / KA431SL Programmable Shunt Regulator
/ A / L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance.2 Ω (Typical) Sink Current Capability: 1. to 1 ma Equivalent Full-Range Temperature Coefficient
More informationBAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes
BAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes 1 SOT-2 Ordering Information 2 L4P 1 2 MARKING BAT54 = L4P BAT54A = L42 BAT54C = L4 BAT54S = L44 November 2014 Connection Diagram BAT54 BAT54A 1 2NC 1 2
More information2N7000BU / 2N7000TA Advanced Small-Signal MOSFET
2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Fast Switching Times Improved Inductive Ruggedness Lower Input Capacitance Extended Safe Operating Area Improved High-Temperature Reliability 1
More informationTIP102 NPN Epitaxial Silicon Darlington Transistor
TIP102 NPN Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: h FE = 0 @ V CE = 4 V, I C = 3 A (Minimum) Collector-Emitter
More informationFGH75N60UF 600 V, 75 A Field Stop IGBT
FGH75N6UF 6 V, 75 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V @ I C = 75 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter,
More informationFOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
FOD84 Series, Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features AC input response (FOD84 only) Applicable to Pb-free IR reflow soldering Compact 4-pin package Current transfer
More informationBC327 PNP Epitaxial Silicon Transistor
BC327 PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for AF-Driver Stages and Low-Power Output Stages Complement to BC337 / BC338 October 2014 1 TO-92 1. Collector
More informationFFD08S60S_F085. Features. FFD08S60S_F085 Stealth 2 Rectifier. 8A, 600V Stealth2 Rectifier. Absolute Maximum Ratings T C = 25 C unless otherwise noted
FFD08S60S_F085 Features High Speed Switching (Max. t rr
More informationBC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor
BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features Switching and Amplifier High-Voltage: BC556, V CEO = -65 V Low-Noise: BC559, BC560 Complement to BC546, BC547, BC548, BC549,
More informationFQD7N30 N-Channel QFET MOSFET
FQD7N30 N-Channel QFET MOSFET 300 V, 5.5 A, 700 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationFGPF70N33BT 330V, 70A PDP IGBT
FGPF7N33BT 33V, 7A PDP IGBT Features High current capability Low saturation voltage: V CE(sat) =.7V @ I C = 7A High input impedance Fast switching RoHS Compliant Applications PDP System General Description
More informationRURG3020CC. 30 A, 200 V, Ultrafast Dual Diode. Features. Description. Applications. Packaging. Ordering Information. Symbol. Data Sheet November 2013
RURG32CC Data Sheet November 23 3 A, 2 V, Ultrafast Dual Diode Description The RURG32CC is an ultrafast dual diode with low forward voltage drop. This device is intended for use as freewheeling and clamping
More informationBAS16 Small Signal Diode
BAS6 Small Signal Diode February 205 2 A6 2 Connection Diagram 2NC SOT-2 Ordering Information Part Number Top Mark Package Packing Method BAS6 A6 SOT-2 L Tape and Reel, 7 inch Reel, 000 pcs BAS6_D87Z A6
More informationKSA1281 PNP Epitaxial Silicon Transistor
KSA1281 PNP Epitaxial Silicon Transistor Features Audio Power Amplifier 3 W Output Application October 2014 1 TO-92L 1. Emitter 2. Collector 3. Base KSA1281 PNP Epitaxial Silicon Transistor Ordering Information
More informationJ174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch
J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch J174 / 175 / 176 / 177 (1) MMBFJ175 / 176 / 177 S G D Ordering Information TO-92 Description June 2013 This device is designed
More informationPN2907 / MMBT2907 PNP General-Purpose Transistor
PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.
More informationKSP44/45 NPN Epitaxial Silicon Transistor
KSP44/45 NPN Epitaxial Silicon Transistor Features High-oltage Transistor Collector-Emitter oltage: CEO = KSP44: KSP45: 350 Collector Power Dissipation: P C (max) = 625mW Ordering Information October 202
More informationFGH60N60SFD 600V, 60A Field Stop IGBT
FGH6N6SFD 6V, 6A Field Stop IGBT Features High current capability Low saturation voltage: V CE(sat) =2.3V @ I C = 6A High input impedance Fast switching RoHS compliant Applications Induction Heating, UPS,
More informationFFA60UA60DN UItrafast Rectifier
FFA6UA6DN UItrafast Rectifier Features Ultrafast switching, Trr < 9ns High Reverse Voltage and High Reliability Avalanche Energy Rated Max Forward Voltage, V F < 2.2V RoHS Compliant Applications Boost
More informationSingle-Channel: 6N138, 6N139 Dual-Channel: HCPL2730, HCPL2731 Low Input Current High Gain Split Darlington Optocouplers
Single-Channel: N, N9 Dual-Channel: HCPL7, HCPL7 Low Input Current High Gain Split Darlington Optocouplers Features Low current.5ma Superior CTR-% Superior CMR-kV/µs CTR guaranteed 7 C U.L. recognized
More informationKSC1815 NPN Epitaxial Silicon Transistor
KSC85 NPN Epitaxial Silicon Transistor Features Audio Frequency Amplifier and High-Frequency OSC Complement to KSA5 Collector-Base Voltage: V CBO = 50 V TO-92. Emitter 2. Collector 3. Base May 204 Ordering
More informationHCPL-0700, HCPL-0701, HCPL-0730, HCPL-0731 Low Input Current High Gain Split Darlington Optocouplers
HCPL-0700, HCPL-070, HCPL-070, HCPL-07 Low Input Current High Gain Split Darlington Optocouplers Single Channel:HCPL-0700, HCPL-070 Dual Channel:HCPL-070, HCPL-07 Features Low input current 0.5 ma Superior
More informationQED223 Plastic Infrared Light Emitting Diode
QED223 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS λ = 880nm Chip material = AlGaAs Package type: T-1 3/4 (5mm lens diameter) Matched photosensor: QSD123/QSD124 Medium wide emission
More informationFFPF30UA60S UItrafast Rectifier
FFPF3UA6S UItrafast Rectifier Features Ultrafast switching, Trr < 9ns High Reverse Voltage and High Reliability Avalanche Energy Rated Max Forward Voltage, V F < 2.2V RoHS Compliant Applications Boost
More informationFJN3314R NPN Epitaxial Silicon Transistor with Bias Resistor
FJN3314R NPN Epitaxial Silicon Transistor with Bias Resistor Features ma Output Current Capability Built-in Bias Resistor ( = 4.7 kω, = 47 kω) Applications Switching, Interface, and Driver Circuits Inverters
More informationFFH60UP60S, FFH60UP60S3
Features High Speed Switching, t rr < 8ns High Reverse Voltage and High Reliability Avalanche Energy Rated Low Forward Voltage, V F
More informationHCPL0600, HCPL0601, HCPL0611, HCPL0637, HCPL0638, HCPL0639 High Speed-10 MBit/s Logic Gate Optocouplers
HCPL, HCPL, HCPL, HCPL7, HCPL8, HCPL9 High Speed- MBit/s Logic Gate Optocouplers Single Channel: HCPL, HCPL, HCPL Dual Channel: HCPL7, HCPL8, HCPL9 Features Compact SO8 package Very high speed- MBit/s
More information2N5550 NPN Epitaxial Silicon Transistor
2N5550 NPN Epitaxial Silicon Transistor Features Amplifier Transistor Collector-Emitter Voltage: V CEO = 40 V February 205 TO-92. Emitter 2. Base 3. Collector Ordering Information Part Number Top Mark
More informationFOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
FOD84 Series, FOD67 Series, FOD87 Series 4-Pin High Operating Temperature Phototransistor Optocouplers Features AC input response (FOD84 only) Applicable to Pb-free IR reflow soldering Compact 4-pin package
More informationH11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers
HAAM, HAA2M, HAA3M, HAA4M AC Input/Phototransistor Optocouplers Features Bi-polar emitter input Built-in reverse polarity input protection Underwriters Laboratory (UL) recognized File #E90700, Volume 2
More informationFFH60UP40S, FFH60UP40S3
FFH60UP40S, FFH60UP40S3 Features High Speed Switching, t rr < 85ns @ I F = 60A High Reverse Voltage and High Reliability Avalanche Energy Rated Low Forward Voltage, V F
More informationMOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
MOC8M, MOC82M, MOC83M 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection) Features High isolation voltage 7500 VAC Peak second High BV CEO minimum 70 Volts Current transfer ratio in
More informationSymbol Parameter Ratings Units V DS Drain to Source Voltage 20 V V GS Gate to Source Voltage ±8 V -Continuous T
FDGNZ Dual N-Channel PowerTrench MOSFET V,. A, 7 mω Features Max r DS(on) = 7 mω at V GS =. V, I D =. A Max r DS(on) = mω at V GS =. V, I D =. A Max r DS(on) = 7 mω at V GS =.8 V, I D =.9 A Max r DS(on)
More informationFQD5N15 N-Channel QFET MOSFET
FQD5N15 N-Channel QFET MOSFET 150 V, 4.3 A, 800 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationKSC2383 NPN Epitaxial Silicon Transistor
KSC2383 NPN Epitaxial Silicon Transistor October 204 TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383
More informationFJV42 NPN High-Voltage Transistor
FJV42 NPN High-Voltage Transistor 3 2 October 2014 FJV42 NPN High-Voltage Transistor 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method
More informationKSH122 / KSH122I NPN Silicon Darlington Transistor
KSH22 / KSH22I NPN Silicon Darlington Transistor Features D-PAK for Surface Mount Applications High DC Current Gain Built-in Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight
More information4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers
4N38M, HDM, HD2M, HD3M, MOC8204M High Voltage Phototransistor Optocouplers Features High voltage: MOC8204M, BV CER = 400V HDM, HD2M, BV CER = 300V HD3M, BV CER = 200V High isolation voltage: 7500 V AC
More informationBD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor
BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor Features Complement to BD135, BD137 and BD139 respectively Applications Medium Power Linear and Switching Ordering Information 1 TO-126 1. Emitter
More informationFGP5N60UFD 600V, 5A Field Stop IGBT
FGP5N6UFD 6V, 5A Field Stop IGBT Features High current capability Low saturation voltage: V CE(sat) =.9V @ I C = 5A High input impedance Fast switching RoHS compliant Applications Induction Heating, UPS,
More informationFFH60UP60S, FFH60UP60S3
Features High Speed Switching, t rr < 8ns High Reverse Voltage and High Reliability Avalanche Energy Rated Low Forward Voltage, V F
More informationBAS16HT1G Small Signal Diode
BAS6HTG Small Signal Diode SOD-33 A March Connection Diagram BAS6HTG Small Signal Diode Absolute Maximum Ratings * T A = 5 C unless otherwise noted Symbol Parameter Value Units V RRM Maximum Repetitive
More informationFGPF V PDP Trench IGBT
FGPF4536 36 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: V CE (sat) =.59 V @ I C = 5 A High Input Impedance Fast Switching RoHS Compliant Applications PDP TV, Consumer appliances,
More informationFGH40N60UFD 600V, 40A Field Stop IGBT
FGH4N6UFD 6V, 4A Field Stop IGBT Features High current capability Low saturation voltage: V CE(sat) =.8V @ I C = 4A High input impedance Fast switching RoHS compliant Applications Induction Heating, UPS,
More informationFDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m Features
FDD86 N-Channel PowerTrench MOSFET V, 7 A, m Features Max r DS(on) = m at V GS = V, I D = A Max r DS(on) = 7 m at V GS = 6 V, I D = 4 A % UIL tested RoHS Compliant General Description September This N-Channel
More informationFDB8860 N-Channel Logic Level PowerTrench MOSFET. 30V, 80A, 2.6mΩ. Features. Applications. December R DS(ON) = 1.9mΩ (Typ), V GS = 5V, I D = 80A
FDB886 N-Channel Logic Level PowerTrench MOSFET 3V, 8A, 2.6mΩ Features R DS(ON) =.9mΩ (Typ), V GS = 5V, I D = 8A Q g(5) = 89nC (Typ), V GS = 5V Low Miller Charge Low Q RR Body Diode UIS Capability (Single
More informationKA431S / KA431SA / KA431SL Programmable Shunt Regulator
/ A / L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance.2 Ω (Typical) Sink Current Capability: 1. to 1 ma Equivalent Full-Range Temperature Coefficient
More informationFeatures. Packaging. 12 A Square Wave, 20 khz Nonrepetitive Peak Surge Current... I FSM
RURD2CCS9A Data Sheet November 23 2 A, 2 V, Ultrafast Dual Diode The RURD2CCS9A is an ultrafast dual diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes
More informationFGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT
FGA2N2FTD 2 V, 2 A Field Stop Trench IGBT Features Field Stop Trench Technology High Speed Switching Low Saturation Voltage: V CE(sat) =.6 V @ I C = 2 A High Input Impedance RoHS Compliant Applications
More informationFIN1002 LVDS 1-Bit, High-Speed Differential Receiver
July 2016 FIN1002 LVDS 1-Bit, High-Speed Differential Receiver Features Greater than 400 Mbs Data Rate 3.3 V Power Supply Operation 0.4 ns Maximum Pulse Skew 2.5 ns Maximum Propagation Delay Bus Pin ESD
More informationH11N1M, H11N2M, H11N3M 6-Pin DIP High Speed Logic Optocouplers
H11N1M, H11N2M, H11N3M 6-Pin DIP High Speed Logic Optocouplers Features High data rate, 5MHz typical (NRZ) Free from latch up and oscilliation throughout voltage and temperature ranges. Microprocessor
More informationTIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor
TIP / TIP / TIP2 NPN Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors Complementary to TIP5 / TIP6 / TIP7 High DC Current Gain: h FE =
More informationBSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor
May 2013 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
More informationKA431 / KA431A / KA431L Programmable Shunt Regulator
KA431 / KA431A / KA431L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance: 0.2 Ω (Typical) Sink Current Capability: 1.0 to 100 ma Equivalent Full-Range
More informationDescription G D TO-220. Symbol Parameter FDP7N50 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDP7N50 N-Channel UniFET TM MOSFET 500 V, 7 A, 900 m Features R DS(on) = 900 m (Max.) @ = 10 V, = 3.5 A Low Gate Charge (Typ. 12.8 nc) Low C rss (Typ. 9 pf) 100% Avalanche Tested Applications ALCD/LED
More informationKSC5502D/KSC5502DT. Symbol Characteristics Rating Unit R θjc Thermal Resistance Junction to Case 2.5 C/W R θja Junction to Ambient 62.
High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK
More information