OBSOLETE ADP3000. Micropower Step-Up/Step-Down Fixed 3.3 V, 5 V, 12 V, Adjustable High Frequency Switching Regulator FEATURES

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1 FEATURES Operates at supply voltages from 2 V to 3 V Works in step-up or step-down mode Very few external components required High frequency operation up to khz Low battery detector on-chip User-adjustable current limit Fixed and adjustable output voltage -lead PDIP, -lead SOIC, and -lead TSSOP packages Small inductors and capacitors APPLICATIONS Notebook, palmtop computers Cellular telephones Hard disk drives Portable instruments Pagers GENERAL DESCRIPTION The is a versatile step-up/step-down switching regulator. It operates from an input supply voltage of 2 V to 2 V in step-up mode, and from 2 V to 3 V in step-down mode. Operating in pulse frequency mode (PFM), the device consumes only µa, making it ideal for applications requiring low quiescent current. It delivers an output current of ma at 3.3 V from a 2 V input in step-up mode, and an output current of ma at 3 V from a V input in step-down mode. The operates at khz switching frequency. This allows the use of small external components (inductors and capacitors), making it convenient for space-constrained designs. The auxiliary gain amplifier can be used as a low battery detector, linear regulator, undervoltage lockout, or error amplifier. Micropower Step-Up/Step-Down Fixed 3.3 V, V, 2 V, Adjustable High Frequency Switching Regulator 2V TO 3.2V V TO 6V FUNCTIONAL BLOCK DIAGRAMS.2V REFERENCE C SET A GAIN BLOCK/ ERROR AMP COMPARATOR khz OSCILLATOR DRIVER R R2 SENSE Figure. SW 3-3.3V FB (SENSE) 2V 2 6.µH IN7 Figure 2. Typical Application R LIM 2Ω 2 3 SW FB D N C, C2 = AVX TPS D7 MR L = SUMIDA CR3- C A SW 3.3V ma C, C2 = AVX TPS D7 MR L = SUMIDA CR3-6R L µh C L Figure 3. Step-Down Mode Operation R2 kω % R kω % V OUT 3V ma 22-3 Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 96, Norwood, MA , U.S.A. Tel: Fax: Analog Devices, Inc. All rights reserved.

2 TABLE OF CONTENTS Specifications... 3 Programming the Gain Block... Absolute Maximum Ratings... ESD Caution... Pin Configurations and Function Descriptions... Typical Performance Characteristics... 6 Theory of Operation... 9 Applications Information... Component Selection... Programming the Switching Current Limit... REVISION HISTORY 9/ Data Sheet Changed from Rev. to Rev. A Added RU- Package... Universal Changes to Table... Changes to Table... Updated Outline Dimensions... Changes to Ordering Guide...6 /97 Revision : Initial Version Power Transistor Protection Diode in Step-Down Configuration... Thermal Considerations... Typical Application Circuits... 3 Outline Dimensions... Ordering Guide... 6 Rev. A Page 2 of 6

3 SPECIFICATIONS C TA 7 C, VIN = 3 V, unless otherwise noted. Table. Parameter Conditions Symbol Min Typ Max Unit INPUT VOLTAGE Step-up mode VIN V Step-down mode 3. V SHUT-DOWN QUIESCENT CURRENT VFB >.3 V; VSENSE >. VOUT IQ µa COMPARATOR TRIP POINT VOLTAGE V OUTPUT SENSE VOLTAGE VOUT V V V COMPARATOR HYSTERESIS 2. mv OUTPUT HYSTERESIS mv - 32 mv mv OSCILLATOR FREQUENCY fosc 3 khz DUTY CYCLE VFB < VREF D 6 % SWITCH-ON TIME ILIM tied to VIN, VFB= ton µs SWITCH SATURATION VOLTAGE TA = 2 C VSAT Step-Up Mode VIN = 3. V, ISW = 6 ma..7 V VIN =. V, ISW = A.. V Step-Down Mode VIN = 2 V, ISW = 6 ma.. V FEEDBACK PIN BIAS CURRENT VFB = V IFB 6 33 na SET PIN BIAS CURRENT VSET = VREF ISET 2 na GAIN BLOCK OUTPUT LOW ISINK = 3 µa, VSET =. V VOL.. V REFERENCE LINE REGULATION V VIN 3 V.2. %/V 2 V VIN V.2.6 %/V GAIN BLOCK GAIN RL = kω AV 6 V/V GAIN BLOCK CURRENT SINK VSET V ISINK 3 µa CURRENT LIMIT 22 Ω from ILIM to VIN ILIM ma CURRENT LIMIT TEMPERATURE COEFFICIENT.3 %/ C SWITCH-OFF LEAKAGE CURRENT Measured at SW pin µa VSW= 2 V, TA = 2 C MAXIMUM EXCURSION BELOW TA = 2 C ISW µa, switch off 3 mv All limits at temperature extremes are guaranteed via correlation using standard statistical methods. 2 This specification guarantees that both the high and low trip points of the comparator fall within the.2 V to.3 V range. 3 The output voltage waveform will exhibit a saw-tooth shape due to the comparator hysteresis. The output voltage on the fixed output versions will always be within the specified range. kω resistor connected between a V source and the AO pin. Rev. A Page 3 of 6

4 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating Input Supply Voltage, Step-Up Mode V Input Supply Voltage, Step-Down Mode 36 V SW Pin Voltage V Pin Voltage. V to VIN Feedback Pin Voltage (). V Switch Current. A Maximum Power Dissipation mw Operating Temperature Range C to 7 C Storage Temperature Range 6 C to C Lead Temperature (Soldering, s) 3 C Thermal Impedance R- 7 C/W RU- C/W N- 2 C/W ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Rev. A Page of 6

5 PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS 2 SW 3 TOP VIEW (Not to Scale) *FIXED VERSIONS 7 6 FB (SENSE)* SET AO 22-2 SW 3 TOP VIEW (Not to Scale) *FIXED VERSIONS 7 6 FB (SENSE)* SET AO 22- Figure. -Lead Plastic DIP (N-) NC NC ILIM NC FB SET VIN SW NC 6 7 TOP VIEW (Not to Scale) 9 AO NC NC NC = NO CONNECT Figure. -lead TSSOP (RU-) 22-3 Figure 6. -Lead SOIC (R-) Table 3. Pin Function Descriptions Mnemonic Function ILIM For normal conditions, connect to VIN. When lower current is required, connect a resistor between ILIM and VIN. To limit the switch current to ma, connect a 22 Ω resistor. VIN Input Voltage. SW Collector of Power Transistor. For step-down configuration, connect to VIN. For step-up configuration, connect to an inductor/diode. Emitter of Power Transistor. For step-down configuration, connect to inductor/diode. For step-up configuration, connect to ground. Do not allow pin to go more than a diode drop below ground. Ground. AO Auxiliary Gain Block (GB) Output. Open collector can sink 3 µa. This pin can be left open if not used. SET Auxiliary Gain Amplifier Input. The amplifier s positive input is connected to the SET pin, and its negative input is connected to the.2 V reference. This pin can be left open if not used. FB/SENSE On the (adjustable) version, this pin is connected to the comparator input. On the -3.3, the -, and the -2, the pin goes directly to the internal resistor divider that sets the output voltage..2v REFERENCE SET A2 GAIN BLOCK/ ERROR AMP A OSCILLATOR A SW.2V REFERENCE SET A GAIN BLOCK/ ERROR AMP OSCILLATOR A SW COMPARATOR DRIVER COMPARATOR DRIVER FB 22-6 R R2 SENSE 22-7 Figure 7. Functional Block Diagram for Adjustable Version Figure. Functional Block Diagram for Fixed Version Rev. A Page of 6

6 TYPICAL PERFORMANCE CHARACTERISTICS ON VOLTAGE (V) V CE(SAT) (V) QUIESCENT CURRENT (µa) = T A = 2 C = T A = 2 C = T A = 2 C SWITCH CURRENT (A) Figure 9. Switch-On Voltage vs. Switch Current in Step-Up Mode = T A = 2 C = T A = 2 C SWITCH CURRENT (A) Figure. Saturation Voltage vs. Switch Current in Step-Down Mode QUIESCENT T A = 2 C OSCILLATOR FREQUENCY (khz) SWITCH CURRENT (A) SWITCH CURRENT (A) INPUT VOLTAGE (V) OSCILLATOR T A = 2 C Figure 2. Oscillator Frequency vs. Input Voltage = V T A = 2 C T A = C R LIM (Ω) T A = C Figure 3. Maximum Switch Current vs. RLIM in Step-Down Mode ( V) = 2V T A = C T A = 2 C T A = C 3 k A INPUT VOLTAGE (V) R LIM (Ω) k 22-3 Figure. Quiescent Current vs. Input Voltage Figure. Maximum Switch Current vs. RLIM in Step-Down Mode (2 V) Rev. A Page 6 of 6

7 ..6 = 3V 9 ON TIME (µs) OSCILLATOR FREQUENCY (khz) SWITCH CURRENT (A). T A = C.2 T A = 2 C.. T A = C.6..2 k R LIM (Ω) Figure. Maximum Switch Current vs. RLIM in Step-Up Mode (3 V) TEMPERATURE ( C(T A )) Figure 6. Oscillator Frequency vs. Temperature DUTY CYCLE (%) 22- SATURATION VOLTAGE (V) TEMPERATURE ( C(T A )) Figure. Duty Cycle vs. Temperature = I SW =.6A TEMPERATURE ( C(T A )) Figure 9. Saturation Voltage vs. Temperature in Step-Up Mode.2.2. = I SW =.6A....9 ON VOLTAGE (V) TEMPERATURE ( C(T A )) TEMPERATURE ( C(T A )) 22-9 Figure 7. Switch-On Time vs. Temperature Figure 2. Switch-On Voltage vs. Temperature in Step-Down Mode Rev. A Page 7 of 6

8 BIAS CURRENT (na) QUIESCENT CURRENT (µa) 2 7 TEMPERATURE ( C(T A )) Figure 2. Feedback Bias Current vs. Temperature 7 = 2V TEMPERATURE ( C(T A )) Figure 22. Quiescent Current vs. Temperature 22-2 BIAS CURRENT (na) TEMPERATURE ( C(T A )) Figure 23. Set Pin Bias Current vs. Temperature Rev. A Page of 6

9 THEORY OF OPERATION The is a versatile, high frequency, switch mode power supply (SMPS) controller. The regulated output voltage can be greater than the input voltage (in boost or step-up mode) or less than the input voltage (in buck or step-down mode). This device uses a gated oscillator technique to provide high performance with low quiescent current. Figure 7 is a functional block diagram of the. The internal.2 V reference is connected to one input of the comparator, and the other input is externally connected (via the FB pin) to a resistor divider, which is connected to the regulated output. When the voltage at the FB pin falls below.2 V, the khz oscillator turns on. The internal oscillator typically provides a.7 µs on time and a. µs off time. A driver amplifier provides base drive to the internal power switch, and the switching action raises the output voltage. When the voltage at the FB pin exceeds.2 V, the oscillator shuts off. While the oscillator is off, the quiescent current is only µa. The comparator s hysteresis ensures loop stability without requiring external components for frequency compensation. The maximum current in the internal power switch is set by connecting a resistor between VIN and the ILIM pin. When the maximum current is exceeded, the switch is turned off. The current limit circuitry has a time delay of about.3 µs. If an external resistor is not used, connect ILIM to VIN. This yields the maximum feasible current limit. Further information on ILIM is included in the Applications Information section. An uncommitted gain block on the can be connected as a low battery detector. The inverting input of the gain block is internally connected to the.2 V reference. The noninverting input is available at the SET pin. A resistor divider, connected between VIN and with the junction connected to the SET pin, causes the AO output to go low when the low battery set point is exceeded. The AO output is an open collector NPN transistor that can sink in excess of 3 µa. The provides external connections for both the collector and the emitter of its internal power switch, permitting both step-up and step-down modes of operation. For the step-up mode, the emitter (Pin ) is connected to, and the collector (Pin SW) drives the inductor. For stepdown mode, the emitter drives the inductor, while the collector is connected to VIN. The output voltage of the is set with two external resistors. Three fixed voltage models are also available: -3.3 (3.3 V), - ( V), and -2 (2 V). The fixed voltage models include laser-trimmed, voltage-setting resistors on the chip. On the fixed voltage models of the, simply connect the feedback pin (Pin ) directly to the output voltage. Rev. A Page 9 of 6

10 APPLICATIONS INFORMATION COMPONENT SELECTION Inductor Selection For most applications, the inductor used with the falls in the range of.7 µh to 33 µh. Table shows recommended inductors and their vendors. Table. Recommended Capacitors Vendor Series Type Phone Number AVX TPS Surface Mount (3) -9 Sanyo OS-CON Through Hole (69) Sprague 9D Surface Mount (63) Panasonic HFQ Through Hole () 3-22 When selecting an inductor for the, it is very important to make sure the inductor is able to handle a current higher than the s current limit, without becoming saturated. As a general rule, powdered iron cores saturate softly, whereas Ferrite cores saturate abruptly. Rod and open drum core geometry inductors saturate gradually. Inductors that saturate gradually are easier to use. Even though rod and drum core inductors are attractive in both price and physical size, they must be used with care because they have high magnetic radiation. When minimizing EMI is critical, toroid and closed drum core geometry inductors should be used. In addition, inductor dc resistance causes power loss. To minimize power loss, it is best to use an inductor with a dc resistance lower than.2 Ω. Table. Recommended Inductors Vendor Series Core Type Phone Number Coiltronics OCTAPAC Toroid (6) 72- Coiltronics UNIPAC Open (6) 72- Sumida CR3, CR Open (7) -67 Sumida CDRH6D2, CDRH73, CDRH6 Semi-Closed Geometry (7) -67 Capacitor Selection For most applications, the capacitor used with the falls in the range of 33 µf to 22 µf. Table shows recommended capacitors and their vendors. For input and output capacitors, use low ESR type capacitors for best efficiency and lowest ripple. Recommended capacitors include the AVX TPS series, the Sprague 9D series, the Panasonic HFQ series, and the Sanyo OS-CON series. When selecting a capacitor, it is important to make sure the maximum capacitor ripple current rms rating is higher than the s rms switching current. It is best to protect the input capacitor from high turn-on current charging surges by derating the capacitor voltage by 2:. For very low input or output voltage ripple requirements, use capacitors with very low ESR, such as the Sanyo OS-CON series. Alternatively, two or more tantalum capacitors can be used in parallel. Diode Selection The s high switching speed demands the use of Schottky diodes. Suitable choices include the N7, the N, the N9, the MBRS2LT3, and the MBR2LT. Fast recovery diodes are not recommended because their high forward drop lowers efficiency. General-purpose and smallsignal diodes should be avoided as well. PROGRAMMING THE SWITCHING CURRENT LIMIT The s RLIM pin permits the cycle-by-cycle switch current limit to be programmed with a single external resistor. This feature offers major advantages that ultimately decrease the component s cost and the PCB s real estate. First, the RLIM pin allows the to use low value, low saturation current and physically small inductors. Additionally, it allows for a physically small surface-mount tantalum capacitor with a typical ESR of. Ω. With this capacitor, it achieves an output ripple as low as mv to mv, as well as a low input ripple. The current limit is usually set to approximately 3 to times the full load current for boost applications, and about. to 3 times the full load current in buck applications. The internal structure of the ILIM circuit is shown in Figure 2. Q, the s internal power switch, is paralleled by sense transistor Q2. The relative sizes of Q and Q2 are scaled so that IQ2 is.% of IQ. Current flows to Q2 through both the RLIM resistor and an internal Ω resistor. The voltage on these two resistors biases the base-emitter junction of the oscillator-disable transistor, Q3. When the voltage across R and RLIM exceeds.6 V, Q3 turns on and terminates the output pulse. If only the Ω internal resistor is used (when the ILIM pin is connected directly to VIN), the maximum switch current is. A. Figure 3, Figure, and Figure give values for lower current limit levels. R LIM (EXTERNAL) Q3 khz OSCILLATOR R Ω (INTERNAL) I Q 2 SW DRIVER Q Q2 Figure 2. Current Limit Operation POWER SWITCH Rev. A Page of 6

11 The delay through the current limiting circuit is approximately.3 µs. If the switch-on time is reduced to less than.7 µs, accuracy of the current trip point is reduced as well. An attempt to program a switch-on time of.3 µs or less produces spurious responses in the switch-on time. However, the still provides a properly regulated output voltage. PROGRAMMING THE GAIN BLOCK The s gain block can be used as a low battery detector, an error amplifier, or a linear post regulator. It consists of an op amp with PNP inputs and an open-collector NPN output. The inverting input is internally connected to the.2 V reference, and the noninverting input is available at the SET pin. The NPN output transistor sinks in excess of 3 µa. Figure 2 shows the gain block configured as a low battery monitor. Set Resistors R and R2 to high values to reduce quiescent current, but not so high that bias current in the SET input causes large errors. A value of 33 kω for R2 is a good compromise. The value for R is then calculated as follows: V R =.2 V.2 V R2 LOBATT where VLOBATT is the desired low battery trip point. Because the gain block output is an open-collector NPN, a pull-up resistor should be connected to the positive logic power supply. V BATT R2 33kΩ R.2V REF SET AO R HYS.6MΩ V R L 7kΩ TO PROCESSOR R = V LB.2V 37.7µA V LB = BATTERY TRIP POINT Figure 2. Setting the Low Battery Detector Trip Point The circuit of Figure 2 may produce multiple pulses when approaching the trip point due to noise coupled into the SET input. To prevent multiple interrupts to the digital logic, add hysteresis to the circuit. Resistor RHYS, with a value of MΩ to MΩ, provides the hysteresis. The addition of RHYS alters the trip point slightly, changing the new value for R to 22-2 VLOBATT.2 V R =.2 V VL.2 V R2 RL RHYS where: VL is the logic power supply voltage. RL is the pull-up resistor. RHYS creates the hysteresis. POWER TRANSISTOR PROTECTION DIODE IN STEP-DOWN CONFIGURATION When operating the in step-down mode with the switch off, the output voltage is impressed across the internal power switch s emitter-base junction. When the output voltage is set to higher than 6 V, a Schottky diode must be placed in a series with to protect the switch. Figure 26 shows the proper way to place D2, the protection diode. The selection of this diode is identical to the step-down commuting diode (refer to the Diode Selection section). C2 R3 2 3 SW FB D, D2 = N SCHOTTKY DIODES D2 D L C R2 Figure 26. Step-Down Mode VOUT > 6. V THERMAL CONSIDERATIONS Power dissipation internal to the can be approximated with the following equations. Step-Up V I V I 2 IN SW IN O P D = I SW R D β VO I SW V OUT > 6V R 22-2 [ I ][ V ] where: ISW is ILIMIT when the current limit is programmed externally; otherwise, ISW is the maximum inductor current. V is the output voltage. I is the output current. VIN is the input voltage. R is Ω (typical RCE(SAT)). D is.7 (typical duty ratio for a single switching cycle). IQ is µa (typical shutdown quiescent current). β = 3 (typical forced beta). Q IN Rev. A Page of 6

12 Step-Down P I β V 2 I I [ I ][ V ] = O O D SW VCESAT Q IN IN VCE( SAT ) SW where: ISW is ILIMIT when the current limit is programmed externally; otherwise, ISW is the maximum inductor current. VCE(SAT) is.2 V (typical value). Check this value by applying ISW to Figure. VO is the output voltage. IO is the output current. VIN is the input voltage. D is.7 (typical duty ratio for a single switching cycle). IQ is µa (typical shutdown quiescent current ). β is 3 (typical forced beta). The temperature rise can be calculated using the following equation: T = P D θ JA where: T is temperature rise. PD is device power dissipation. θja is thermal resistance (junction-to-ambient). V For example, consider a boost converter with the following specifications: VIN is 2 V. VO is 3.3 V. IO is ma. ISW is. A (externally programmed). Using the step-up power dissipation equation: P D (2)(.) 2 ().. 2 = [.7] [ 6][] E T is mw (7 C/W) = 3. C, using the R- package. T is mw (2 C/W) = 22.2 C, using the N- package. At a 7 C ambient, the die temperature would be. C for the R- package and 92.2 C for the N- package. These junction temperatures are well below the maximum recommended junction temperature of 2 C. Finally, the die temperature can be decreased up to 2% by using a large metal ground plate as ground pickup for the. Rev. A Page 2 of 6

13 TYPICAL APPLICATION CIRCUITS 2V TO 3.2V C 2Ω 2 L 6.µH IN7 V OUT 3.3V ma.v TO.V C 2Ω 2 L µh IN7 V OUT 2V ma SW SW -3.3V L = SUMIDA CR3-6R C, C2 = AVX TPS D7 MR TYPICAL EFFICIENCY = 7% 2V TO 3.2V SENSE Figure V to 3.3 V/ ma Step-Up Converter C -V 2Ω L = SUMIDA CR3-6R C, C2 = AVX TPS D7 MR TYPICAL EFFICIENCY = % 2.7V TO.V 3 2 SW 3 SENSE L 6.µH IN7 Figure 2. 2 V to V/ ma Step-Up Converter C 2 SW 3 -V 2Ω L = SUMIDA CR3-6R C, C2 = AVX TPS D7 MR TYPICAL EFFICIENCY = % SENSE L 6.µH IN7 C2 C2 C2 V OUT V ma V OUT V ma V TO 6V -2V L = SUMIDA CR- C = AVX TPS D7 MR C2 = AVX TPS D7 M6R TYPICAL EFFICIENCY = 7% C SENSE Figure 3.. V to 2 V/ ma Step-Up Converter 2Ω 2 3 SW FB -ADJ L = SUMIDA CR3- C, C2 = AVX TPS D7 MR TYPICAL EFFICIENCY = 7% TO 3V D N7 3 L µh C2 R2 kω R kω Figure 3. V to 3 V/ ma Step-Down Converter C 33µF 2V 2Ω 2 3 SW SENSE -V L: SUMIDA CR3- D C = AVX TPS D336 M2R2 N7 C2 = AVX TPS D7 MR TYPICAL EFFICIENCY = 77% L µh C2 6V V OUT 3V ma V OUT V 2mA C Figure V to V/ ma Step-Up Converter Figure 32. V to V/2 ma Step-Down Converter Rev. A Page 3 of 6

14 V C 7µF 6V 2Ω 2 3 SW 2.V TO.2V AVX-TPS kω 9kΩ MΩ 2Ω L = SUMIDA CR- C = AVX TPS D76 M6R C2 = AVX TPS D7 MR TYPICAL EFFICIENCY = 6% SET SW A FB SENSE -V D N7 Figure 33. V to V/ ma Inverter 33kΩ kω 33nF 2N297 kω 9kΩ L µh C2 V OUT V ma (SUMIDA CDRH62) 6.µH N7 3kΩ % 2kΩ % AVX-TPS IN V O IN2 ADP332AR SD Figure 3. Cell Li-Ion to 3 V/2 ma Converter with Shut-Down at VIN 2. V % EFFICIENCY I O = ma 2.V SHDN IQ = µa I O = ma ma VIN (V) Figure 3. Typical Efficiency of the Circuit of Figure V O2 µf 6V (MLC) µf 6V (MLC) 3V ma 3V ma Rev. A Page of 6

15 OUTLINE DIMENSIONS.37 (9.3).36 (9.27).3 (9.2). (.7) MAX.29 (7.9).2 (7.2).27 (6.9). (2.) BSC. (.3) MIN. (3.).3 (3.3) SEATING PLANE. (2.79).6 (.2).22 (.6). (.27). (.6). (.). (.36).32 (.26).3 (7.7).3 (7.62). (3.).3 (3.3).2 (3.). (.3). (.2). (.2) COMPLIANT TO JEDEC STANDARDS MO-9AA CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN Figure 36. -Lead Plastic Dual In-Line Package [PDIP] (N-) Dimensions shown in inches and (millimeters). (.7) 3. (.97). (.96). (.9) 6.2 (.2). (.22).27 (.) BSC.7 (.6). (.96).2 (.99).2 (.9).3 (.32). (.). (.2) COPLANARITY.2 (.9).27 (.) SEATING.3 (.22)..7 (.67). (.7) PLANE COMPLIANT TO JEDEC STANDARDS MS-2AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN Figure 37. -Lead Standard Small Outline Package [SOIC] Narrow Body (R-) Dimensions shown in millimeters and (inches) Rev. A Page of 6

16 BSC 7 PIN..6. BSC..2.2 MAX SEATING PLANE COPLANARITY. COMPLIANT TO JEDEC STANDARDS MO-3AB- Figure 3. -Lead Thin Shrink Small Outline Package [TSSOP] (RU-) Dimensions shown in millimeters ORDERING GUIDE Model Output Voltage Temperature Range Package Description Package Option AN Adjustable C to C -lead plastic DIP N- AN V C to C -lead plastic DIP N- AN- V C to C -lead plastic DIP N- AN-2 2 V C to C -lead plastic DIP N- AR Adjustable C to C -lead SOIC R- AR-REEL Adjustable C to C -lead SOIC R- AR V C to C -lead SOIC R- AR-3.3-REEL 3.3 V C to C -lead SOIC R- AR- V C to C -lead SOIC R- AR--REEL V C to C -lead SOIC R- AR-2 2 V C to C -lead SOIC R- AR-2-REEL 2 V C to C -lead SOIC R- ARU Adjustable C to C -lead TSSOP RU- ARU-REEL Adjustable C to C -lead TSSOP RU Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. C22 9/(A) Rev. A Page 6 of 6